CN207116432U - A kind of high voltage LED chip structure of CSP encapsulation - Google Patents

Abstract

The utility model discloses a kind of high voltage LED chip structure of CSP encapsulation, including upside-down mounting high voltage LED chip, fluorescent adhesive layer, package substrate, the upside-down mounting high voltage LED chip is welded on package substrate, each high-voltage chip includes more sub- chips, each sub- chip is separated by isolating deep trench, every sub- chip includes n-type GaN, active layer, p-type GaN layer, current-diffusion layer, and n-electrode and p-electrode on p-type GaN table tops, wherein n-electrode is connected by deep trench side-wall metallic conductive layer with n-type GaN inclined-planes, pass through insulator separation between metal conducting layer and sub- chip, the n-electrode and p-electrode of each sub- chip again respectively with electrode of substrate pad and interconnection line bonding.The utility model has the advantages of CSP encapsulation volumes are small low with high-voltage chip power requirement concurrently, can further increase the reliability being electrically connected between the sub- chip of high-voltage chip, increases the area of chip light emitting layer under equal chip area.

Description

A kind of high voltage LED chip structure of CSP encapsulation

Technical field

The present invention relates to a kind of chip structure of high voltage LED chip, more particularly to a kind of high-voltage LED core of CSP encapsulation Piece, belong to semi-conductor LED chips manufacture and encapsulation field.

Background technology

Semiconductor lighting light emitting diode (LED) has light efficiency height, long lifespan, green, the saving energy etc. many excellent Point, the revolutionary technology in 21 century in new solid light source epoch is described as, is referred to as forth generation green light source.

CSP, i.e. wafer-level package device, refer to encapsulation volume and flip-chip fixing fabric structure to identical or encapsulation volume No more than the 20% of flip-chip volume, in LED field, because small volume, flexibility ratio is high for CSP encapsulation, and its application is more next It is more extensive.In addition, as LED in the deep development of lighting field, traditional low-voltage LED increasingly exposes the drawbacks of intrinsic, Low including driving power short life, conversion efficiency, low-voltage LED thermal diffusivity is bad, it is impossible to is worked under high current, in solution Problem is stated, high voltage LED chip arises in recent years, and this high voltage LED chip is integrated multiple series connection on the same chip Sub- chip, this little chip are directly just completed in chip manufacturing proces, have the advantages that power requirement is low, light efficiency is high； Upside-down mounting high voltage LED chip emits light from substrate sapphire, and encapsulation process utilizes eutectic welding method, by chip front side Electrode be aligned and weld with the electrode pad on substrate, it is not necessary to carry out electrode connection with gold thread, add the steady of encapsulation It is qualitative, in addition, heat caused by the high-voltage LED luminescent layer of inverted structure is directly transmitted to substrate, there is more preferable radiating effect.Cause This, the high-voltage chip of CSP encapsulation had both reduced the volume of encapsulation, had high voltage LED chip excellent compared to conventional low chip again Gesture.

A kind of CSP packaged chip structures and making disclosed in Chinese invention patent application Publication No. CN 105633240 Method, n-electrode is formed to reduce the loss of light-emitting area by using n-type GaN sloped sidewalls, but it only produces pressure common The LED chip of CSP encapsulation, the technique for forming slope twice is related in manufacturing process.

A kind of upside-down mounting high-voltage LED disclosed in Chinese invention patent application Publication No. CN 103855149 and Preparation method, being interconnected on flip-chip substrate between sub- chip is completed, solved caused by interconnection line gets over deep trench Less reliable's problem, but metal conducting layer is made in the sub- chip sides of vertical stratification, easily form metal in uneven thickness Film, high current by when easily cause open circuit.

The content of the invention

It is an object of the invention to provide the high voltage LED chip structure and preparation method of a kind of CSP encapsulation, solves existing skill In art, the intrinsic drawbacks that expose of conventional low voltage LED of CSP encapsulation, including driving power short life, conversion efficiency are low, scattered The shortcomings of hot bad；Meanwhile the integrity problem of electrical interconnection between the sub- chip of Conventional flip high-voltage LED is improved, maximally Increase the luminescent layer area under equal chip area.

To achieve these goals, the present invention adopts the following technical scheme that：A kind of CSP encapsulation high voltage LED chips and its system Make method, including upside-down mounting high voltage LED chip, fluorescent glue, package substrate, the upside-down mounting high voltage LED chip is welded on package substrate On, each high-voltage chip includes more sub- chips, and each sub- chip is separated by isolating deep trench, and every sub- chip includes n Type GaN, active layer, p-type GaN layer, current extending and n-electrode and p-electrode, the n-electrode pass through deep trench side-wall metallic Conductive layer is connected with n-type GaN inclined-planes, by isolating on deep trench footwear slope the insulating barrier covered between metal conducting layer and sub- chip Isolation, the n-electrode and p-electrode of each sub- chip are located at upside-down mounting with electrode of substrate pad and interconnection wire bonding, fluorescent adhesive layer respectively again On the upside of chip.

Further, metal conducting layer, n-electrode, p-electrode are preferably golden using the electric conductivity such as Ag, Ni, Al and reflecting properties Category, can be single-layer metal structure, can also use multi-layer metal structure or the alloy-layer of their compositions；

Further, current-diffusion layer can be ito thin film or metallic film or other conductive films；

Further, insulating barrier can be the materials such as silicon nitride, silica or aluminium nitride composition or these materials Combination or composition dbr structure；

Further, n-electrode, p-electrode are respectively positioned on p-type GaN table tops, are electrically isolated between them, n-electrode and current extending Between with insulator separation；

Further, electrical interconnection line and the electrode pad being provided with package substrate between sub- chip；

Further, upside-down mounting high voltage LED chip electrode to substrate with after package substrate electrode pad and interconnection line bonding, carrying out Laser lift-off, and sprayed with fluorescent powder layer and protection glue-line on n-type GaN；

Further, package substrate uses AlN, Si or metal material, baseplate material and electrode of substrate pad and interconnection line it Between be electrically isolated with insulating barrier.

Brief description of the drawings

Fig. 1 is the high voltage LED chip structural representation of CSP of the present invention encapsulation；

Fig. 2 is the Making programme figure of the high voltage LED chip that CSP is encapsulated in one embodiment of the invention；

Fig. 3 is the three-dimensional view before the encapsulation of one embodiment of the invention mesohigh LED chip；

Fig. 4-10 is each step structural representation of the high voltage LED chip manufacturing process of CSP of the present invention encapsulation；

Embodiment

In order that those skilled in the art more fully understand the present invention program, the present invention is made below according to accompanying drawing more detailed Thin explanation.All features, method or step disclosed in this specification, in addition to mutually exclusive feature or step, Combine in any way.Any feature disclosed in this specification, unless specifically stated otherwise, it can be replaced by other equivalent features Change, each feature be equivalent or similar characteristics in an example, unless there are special narration.

Refering to a kind of high voltage LED chip constructive embodiment one for CSP encapsulation that shown in Fig. 1 to Figure 10, the present invention discloses, bag Include：N-type GaN layer 2, active layer 3, p-type GaN layer 4, current extending 5, isolation deep trench 6, insulating barrier 7, metal conducting layer 8, n Electrode 9a and p-electrode 9b, package substrate 10, electrode of substrate pad 11 and fluorescent adhesive layer 12.The isolation deep trench 6 is high pressure Chip epitaxial layer is separated into two or more sub- chips, and every sub- chip has p-electrode and n-electrode independent of each other, insulated Layer 7 isolates metal conducting layer 8 and p-type GaN, and the metal conducting layer 8 and p-electrode 9a, n-electrode 9b are the conductions such as Ag, Ni, Al Property and all preferable metal of reflecting properties, can use single-layer metal structure, can also use multi-layer metal structure；Sub- chip it Between lateral wall slope is formed by deep isolated groove 8, and be formed on insulating barrier 7, metal formed on the slope of n-type GaN layer 2 Conductive layer 8, and extended to along the insulating barrier 7 on oblique wave in p-type GaN layer 4 and form n-electrode, n-electrode and p-electrode respectively with base Plate counter electrode pad 11 welds.After high-voltage chip and electrode of substrate pad solder, using laser lift-off substrate desquamation, and Sprayed with fluorescent powder and protection glue-line 12 in the n-type GaN layer 2 exposed.

In the case where not departing from spiritual or necessary characteristic of the invention, the present invention can be embodied in other specific forms.Should The specific embodiment each side is considered merely as illustrative and non-limiting.Therefore, scope of the invention such as appended claims It is shown in scope rather than shown as indicated above.It is all fall change in the equivalent meaning and scope of claim should be regarded as Fall in the category of claim.

Claims (5)

1. a kind of high voltage LED chip structure of CSP encapsulation, including high voltage LED chip, fluorescent glue, package substrate, its feature exist In the LED high-voltage flip-chip is connected on package substrate, and each high-voltage chip includes more sub- chips, and each sub- chip leads to Cross isolation deep trench to separate, every sub- chip includes n-type GaN layer, active layer, p-type GaN layer, current extending and n electricity Pole and p-electrode, wherein n-electrode are extended on n-type GaN slopes by metal conducting layer, and this metal conducting layer passes through insulating barrier and p Type GaN and the isolation of active layer side wall；The n-electrode and p-electrode are respectively positioned on above p-type GaN and are electrically isolated, n-electrode and p-electrode with Package substrate counter electrode pad and interconnection line weld.

2. the high voltage LED chip structure of CSP according to claim 1 encapsulation, it is characterised in that the n-electrode, p-electrode with And metal conducting layer uses tri- kinds of electric conductivity of Ag, Al, Ni and all preferable metal of reflecting properties, its use single-layer metal structure or Multi-layer metal structure.

3. the high voltage LED chip structure of CSP encapsulation according to claim 1, it is characterised in that the current-diffusion layer can To be ito thin film or metallic film.

4. the high voltage LED chip structure of CSP according to claim 1 encapsulation, it is characterised in that the insulating barrier can be Silicon nitride, silica or the dbr structure of aluminium nitride material composition or these combinations of materials.

5. the high voltage LED chip structure of CSP encapsulation according to claim 1, it is characterised in that in n-type behind peeling liner bottom Spraying forms fluorescent material and protection glue-line on GaN.