CN203312358U

CN203312358U - LED chip inverted packaging structure

Info

Publication number: CN203312358U
Application number: CN2013202526328U
Authority: CN
Inventors: 尹梓伟; 吴波; 张万功
Original assignee: DONGGUAN SINOWIN OPTO-ELECTRONIC TECHNOLOGY Co Ltd
Current assignee: DONGGUAN SINOWIN OPTO-ELECTRONIC CO., LTD.
Priority date: 2013-05-11
Filing date: 2013-05-11
Publication date: 2013-11-27
Anticipated expiration: 2023-05-11

Abstract

The utility model discloses an LED chip inverted packaging structure, which comprises an LED chip and a support. The LED chip comprises a sapphire substrate, a P-pole electrode and an N-pole electrode. The support comprises metal substrates and reflection cups which are integrally formed by injection moulding. The metal substrates are two pins which are separated. The P-pole electrode and the N-pole electrode of the LED chip are respectively solidly crystallized on the tops of the two pins of the metal substrates. By making the LED chip directly solidly crystallized on the metal substrates of the support, the LED chip inverted packaging structure which no longer requires silicon base plates or ceramic base plates used in conventional inverted packaging technologies also requires no wiring, bonding or gold wire welding technologies for the silicon base plates or the ceramic base plates. Therefore, the technical difficulties are significantly lowered. The material cost is also greatly reduced. Meanwhile, the packaging yield is improved. The heat of the LED chip is directly guided into the support from the electrodes. Therefore, the LED chip inverted packaging structure has excellent heat radiation performance.

Description

The LED chip inverted structure

Technical field

The utility model relates to the encapsulating structure of a kind of LED, specifically refers to a kind of inverted structure of LED chip.

Background technology

The LED of tradition formal dress, the position of blue chip electrode on the chip light-emitting face of its Sapphire Substrate as shown in Figure 1, comprises P type electrode 110, N-type electrode 120, p-type GaN130, N-shaped GaN140, Sapphire Substrate 150 and metallic reflective layer 160.Due to p-type GaN doping difficulty, thereby the current method for preparing the metal transparency electrode on p-type GaN that generally adopts makes current spread to reach the purpose of uniformly light-emitting.But the metal transparency electrode will absorb 30% ~ 40% light, therefore the thickness of current-diffusion layer should reduce to hundreds of nm, yet, reduced thickness has limited again conversely current-diffusion layer and has realized all even reliable current spreads on p-type GaN layer surface, therefore, this p-type contact structures have restricted the operating current of LED chip; Simultaneously, the pn of this structure knot heat is derived by Sapphire Substrate, because sapphire conductive coefficient is 35W/mK, poorer than metal level, so thermally conductive pathways is long, and the thermal resistance of this LED chip is larger; And the electrode of this structure also can block the bright dipping of part light with lead-in wire.The LED chip of tradition formal dress is not optimum for light extraction efficiency and the hot property of whole device, in order to overcome the deficiency of formal dress, the Flipchip flip chip technology (fct) has been invented by U.S. Lumileds Lighting company, as shown in Fig. 2, at first this package method needs to prepare the large scale LED chip 210 with applicable eutectic welding, the silicon base plate 220 for preparing simultaneously corresponding size, and make the golden conductive layer 230 of eutectic welding electrode thereon and draw conductive layer 240, ultrasonic wave gold ball bonding point 250, then utilize the eutectic welding equipment that large scale LED chip 210 and silicon base plate 220 is welded together, and load onto antistatic protection diode 260, again silicon base plate 220 and heat sink 270 use heat-conducting glues are sticked together, two electrodes are used respectively a φ 3mil spun gold or two φ 1mil spun golds.According to heat sink base plate difference, the common upside-down method of hull-section construction that two kinds of heat sink base plates are arranged in the market: the one, utilize the eutectic welding equipment that large scale W level LED chip and silicon base plate are welded together, this is called the silicon base plate upside-down method of hull-section construction; Also having a kind of is the ceramic bottom board upside-down method of hull-section construction, at first this upside-down method of hull-section construction need prepare the LED chip with applicable eutectic welding electrode structure and large lighting area, and make eutectic welding conductive layer and draw conductive layer at ceramic bottom board, then utilize the eutectic welding equipment that large scale LED chip and ceramic bottom board are welded together.These two kinds of upside-down mounting methods all need to use substrate, therefore inevitably need on substrate, connect up, and with substrate bonding and bonding wire craft, these techniques not only need to expend a large amount of process costs, and can affect yields.

The utility model content

The purpose of this utility model is high for existing inverted structure process costs, the problem that yields is low and a kind of LED inverted structure is provided, and this inverted structure cost is low, and yields is high.

For achieving the above object, the technical solution adopted in the utility model is as follows:

The LED chip inverted structure, comprise LED chip and support, described LED chip comprises sapphire substrate and P utmost point electrode and N utmost point electrode, described support comprises metal substrate and the reflector of integrated through injection molding, metal substrate is two Pin pin that are separated, and the P utmost point electrode of described LED chip and N utmost point electrode difference die bond are in two Pin pin end faces of described metal substrate.

The die bond material of described LED chip and described metal substrate is nanoscale diamond dust tin cream.

The beneficial effects of the utility model are: by the direct die bond of LED chip on support, silicon base plate or ceramic bottom board in traditional reverse installation process have been saved, the P utmost point electrode of LED chip and the direct die bond of N utmost point electrode are in metal substrate, therefore saved the technique of wiring, bonding and the weldering gold thread of silicon base plate or ceramic bottom board, therefore, greatly reduce complex process degree and material cost, simultaneously, improved the yields of encapsulation; The heat of LED chip directly imports support, heat dispersion excellence from electrode.

The accompanying drawing explanation

Below in conjunction with accompanying drawing, the utility model is described further:

Fig. 1 is LED chip tradition formal dress structural representation;

Fig. 2 is LED chip tradition inverted structure schematic diagram;

Fig. 3 is the utility model LED chip inverted structure schematic diagram.

Embodiment

With reference to figure 3, the LED chip inverted structure, comprise LED chip and support, described LED chip comprises sapphire substrate 310 and P utmost point electrode 320 and N utmost point electrode 330, described support comprises metal substrate 340 and the reflector 350 of integrated through injection molding, two the Pin pin of metal substrate 340 for being separated, die bond is in two Pin pin end faces of described metal substrate 340 respectively for the P utmost point electrode 320 of described LED chip and N utmost point electrode 330, and the die bond material of described LED chip and described metal substrate 340 is nanoscale diamond dust tin cream.

By the direct die bond of LED chip on support, silicon base plate or ceramic bottom board in traditional reverse installation process have been saved, the P utmost point electrode of LED chip and N utmost point electrode directly weld die bond in metal substrate, therefore saved the technique of wiring, bonding and the weldering gold thread of silicon base plate or ceramic bottom board, therefore, greatly reduce complex process degree and material cost, simultaneously, improved the yields of encapsulation; The thermal conductivity of nanoscale diamond dust tin cream is 200 W/mK, and far above thermal conductivity 15 W/mK of traditional die bond elargol, the heat of LED chip directly imports support, heat dispersion excellence from electrode.

Above embodiment just is explanation rather than restriction the utility model, therefore all equivalences of doing according to the described method of the utility model patent claim change or modify, is included in the utility model patent claim.

Claims

1.LED flip chip structure, it is characterized in that: comprise LED chip and support, described LED chip comprises sapphire substrate and P utmost point electrode and N utmost point electrode, described support comprises metal substrate and the reflector of integrated through injection molding, metal substrate is two Pin pin that are separated, and the P utmost point electrode of described LED chip and N utmost point electrode difference die bond are in two Pin pin end faces of described metal substrate.

2. LED chip inverted structure according to claim 1, it is characterized in that: the die bond material of described LED chip and described metal substrate is nanoscale diamond dust tin cream.