CN202352671U - Light-emitting diode (LED) packaging structure - Google Patents
Light-emitting diode (LED) packaging structure Download PDFInfo
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- CN202352671U CN202352671U CN2011204575071U CN201120457507U CN202352671U CN 202352671 U CN202352671 U CN 202352671U CN 2011204575071 U CN2011204575071 U CN 2011204575071U CN 201120457507 U CN201120457507 U CN 201120457507U CN 202352671 U CN202352671 U CN 202352671U
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- encapsulating structure
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Abstract
The embodiment of the utility model discloses a light-emitting diode (LED) packaging structure. The LED packaging structure comprises a substrate, a plurality of inverted low-power LED wafers, a fluorescence glue layer and a transparent glue layer, wherein the inverted low-power LED wafers are formed on one side of the substrate through an eutectic soldering process or in a die bonding mode; the fluorescence glue layer is formed outside the low-power LED wafers; and the transparent glue layer is formed by performing injection molding outside the fluorescence glue layer, so that the low-power LED wafers can be integrated on the LED packaging structure. By fully utilizing a bearing space of the LED packaging structure, the power and the luminous flux of an LED can be further improved, and a development requirement on a high-power LED in the lighting market is met.
Description
Technical field
The utility model relates to the LED field, relates in particular to a kind of LED encapsulating structure.
Background technology
(Light Emitting Diode LED) is a kind of solid-state semiconductor device that can electric energy be converted into visible light to light-emitting diode, and it relies on, and volume is little, less energy consumption, high brightness, advantage such as low in calories, is widely used on the display device.Because technology is limit, traditional LED encapsulating structure can only weld single LEDs wafer with gold thread on substrate.Because requirements such as LED encapsulating structure itself dispel the heat, fixes, its volume is generally more fixing, and the LED encapsulating structure only welds the waste that single LEDs wafer has just caused bearing space like this, can't satisfy the integrated demand for development of element height.
The utility model content
The utility model embodiment technical problem to be solved is, a kind of LED encapsulating structure is provided, to improve the degree of integration of LED encapsulating structure.
In order to solve the problems of the technologies described above; The utility model embodiment has proposed a kind of LED encapsulating structure; Comprise substrate, this substrate one side many upside-down mounting low-power LED wafers, be formed at the outer fluorescence glue-line of these many low-power LED wafers, and annotate the substratum transparent that forms at this fluorescence glue-line external pressure.
Further, said low-power LED wafer bottom surface is provided with positive electrode and negative electrode, is provided with insulating barrier between said positive electrode and the negative electrode.
Further, said low-power LED wafer bottom surface is provided with the electrode that the small size point-like is arranged.
Further, said electrode is or square or circular electrode.
Further, said substrate one side is formed with 2-71 low-power LED wafer.
Further, said fluorescence glue-line and substratum transparent all adopt the silica gel colloid.
Further, said substrate is metal substrate or ceramic substrate.
The utility model embodiment is through providing a kind of LED encapsulating structure; Comprise substrate, this substrate one side many upside-down mounting low-power LED wafers, be formed at the outer fluorescence glue-line of these many low-power LED wafers; And annotate the substratum transparent that forms at this fluorescence glue-line external pressure, thus can integrated many upside-down mounting low-power LED wafers on the LED encapsulating structure, to make full use of the bearing space of LED encapsulating structure; Further improve the integrated level of LED encapsulating structure, satisfied the integrated demand for development of element height; And adopt upside-down mounting low-power LED wafer, and not needing the gold thread welding, cost has been practiced thrift in the spending of having saved gold thread, has shortened the production cycle, has improved production efficiency, in addition, has also reduced the product thermal resistance, has increased reliability.
Description of drawings
Fig. 1 is the primary structure figure of the LED encapsulating structure of the utility model embodiment.
Fig. 2 is the bottom surface structure chart of the low-power LED wafer 2 of the utility model embodiment.
Fig. 3 is the bottom surface structure chart of the low-power LED wafer 2 of another embodiment of the utility model.
Embodiment
Below in conjunction with accompanying drawing, embodiment is elaborated to the utility model.
Fig. 1 is the primary structure figure of the LED encapsulating structure of the utility model embodiment; Its mainly comprise substrate 1, through eutectic welder skill or solid crystal type be formed at these substrate 1 one sides 2-10 (this quantity can be confirmed according to actual conditions) upside-down mounting (Flip Chip) low-power LED wafer 2, be formed at the outer fluorescence glue-line 3 of this many low-power LED wafers 2, and annotate the substratum transparent 4 that forms at these fluorescence glue-line 3 external pressures.
Particularly:
Low-power LED wafer 2 can comprise structure as shown in Figure 2; The bottom surface is provided with the electrode 5 (comprising positive pole and negative pole) that is used for the eutectic weldering; The electrode that generally can adopt small size point-like or square, rectangle, circle and other shapes to arrange on the electrode 5, and be provided with insulating barrier 8 between the electrode 5.Single the desirable 0.07-0.5W of low-power LED wafer 2 power, thereby the desirable 1-5W of whole LED encapsulating structure power.
As a kind of execution mode, the low-power LED wafer can comprise structure as shown in Figure 3, and the bottom surface is provided with positive electrode 6 and negative electrode 7, is provided with insulating barrier 8 between positive electrode 6 and the negative electrode 7.
In addition, fluorescence glue-line 3 can all adopt the silica gel colloid with substratum transparent 4, and substrate 1 can be metal substrate or ceramic substrate.
The following points that need explanation:
1, when many upside-down mounting low-power LED wafers are formed at substrate one side through eutectic welder skill, need accurately solid crystalline substance to the relevant position, and guarantee yields;
2, the coating of fluorescence glue-line will guarantee many luminous photochromic consistency of low-power LED wafer;
3, many integrated eutectics of low-power LED wafer can be realized series and parallel work on same substrate, thereby realize the integrated encapsulation of many low-power LED wafers;
4, along with the improvement of LED wafer technique, the LED number of wafers that can carry on the LED encapsulating structure can also be on the increase;
5, the integrated of many low-power LED wafers makes the substrate circuit design very flexibly.
The above is the embodiment of the utility model; Should be pointed out that for those skilled in the art, under the prerequisite that does not break away from the utility model principle; Can also make some improvement and retouching, these improvement and retouching also are regarded as the protection range of the utility model.
Claims (7)
1. a LED encapsulating structure is characterized in that, comprise substrate, this substrate one side many upside-down mounting low-power LED wafers, be formed at the outer fluorescence glue-line of these many low-power LED wafers, and annotate the substratum transparent that forms at this fluorescence glue-line external pressure.
2. LED encapsulating structure as claimed in claim 1 is characterized in that, said low-power LED wafer bottom surface is provided with positive electrode and negative electrode, is provided with insulating barrier between said positive electrode and the negative electrode.
3. LED encapsulating structure as claimed in claim 1 is characterized in that, said low-power LED wafer bottom surface is provided with the electrode that the small size point-like is arranged.
4. LED encapsulating structure as claimed in claim 3 is characterized in that, said electrode is or square or circular electrode.
5. like each described LED encapsulating structure in the claim 1 to 4, it is characterized in that said substrate one side is formed with 2-71 low-power LED wafer.
6. like each described LED encapsulating structure in the claim 1 to 4, it is characterized in that said fluorescence glue-line and substratum transparent all adopt the silica gel colloid.
7. like each described LED encapsulating structure in the claim 1 to 4, it is characterized in that said substrate is metal substrate or ceramic substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011204575071U CN202352671U (en) | 2011-11-17 | 2011-11-17 | Light-emitting diode (LED) packaging structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011204575071U CN202352671U (en) | 2011-11-17 | 2011-11-17 | Light-emitting diode (LED) packaging structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202352671U true CN202352671U (en) | 2012-07-25 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011204575071U Expired - Fee Related CN202352671U (en) | 2011-11-17 | 2011-11-17 | Light-emitting diode (LED) packaging structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202352671U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103400833A (en) * | 2013-07-29 | 2013-11-20 | 深圳市天电光电科技有限公司 | Led module and manufacturing method thereof |
| CN106684075A (en) * | 2017-02-16 | 2017-05-17 | 张虹 | High-light efficiency light source assembly and preparation method thereof |
-
2011
- 2011-11-17 CN CN2011204575071U patent/CN202352671U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103400833A (en) * | 2013-07-29 | 2013-11-20 | 深圳市天电光电科技有限公司 | Led module and manufacturing method thereof |
| CN106684075A (en) * | 2017-02-16 | 2017-05-17 | 张虹 | High-light efficiency light source assembly and preparation method thereof |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20171023 Address after: The Town Lake Anxi County of Quanzhou City, Fujian province 362411 Photoelectric Industrial Park Patentee after: FUJIAN LIGHTNING OPTOELECTRONIC CO., LTD. Address before: Baoan District Shiyan street Shenzhen city Guangdong province 518000 South Road community should be one stone Wentao Science Park building B Patentee before: Lighting Optoectronic(SZ) Co., Ltd. |
|
| TR01 | Transfer of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20120725 Termination date: 20191117 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |