CN203351666U - Led module - Google Patents

Led module Download PDF

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Publication number
CN203351666U
CN203351666U CN 201320453761 CN201320453761U CN203351666U CN 203351666 U CN203351666 U CN 203351666U CN 201320453761 CN201320453761 CN 201320453761 CN 201320453761 U CN201320453761 U CN 201320453761U CN 203351666 U CN203351666 U CN 203351666U
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CN
China
Prior art keywords
led module
led chip
led
box dam
utility
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN 201320453761
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Chinese (zh)
Inventor
周印华
陈栋
雷玉厚
万喜红
徐志坚
吴叶青
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
FUJIAN LIGHTNING OPTOELECTRONIC Co Ltd
Original Assignee
LIGHTNING OPTOECTRONIC TECHNOLOGY (SHENZHEN) CO LTD
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by LIGHTNING OPTOECTRONIC TECHNOLOGY (SHENZHEN) CO LTD filed Critical LIGHTNING OPTOECTRONIC TECHNOLOGY (SHENZHEN) CO LTD
Priority to CN 201320453761 priority Critical patent/CN203351666U/en
Application granted granted Critical
Publication of CN203351666U publication Critical patent/CN203351666U/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Abstract

An embodiment of the utility model discloses an LED module. The LED module comprises a high terminal conductive ceramic substrate, an LED chip invertedly welded on the substrate by eutectic die bonding; a dam formed on the periphery of the LED chip by injection-moulding; a fluorescent glue layer formed by coating the dam with fluorescent glue; and an optical structure layer coating the fluorescent glue layer. According to the embodiment of the utility model, the LED chip is invertedly welded on the high terminal conductive ceramic substrate by eutectic die bonding, achieving the advantages of low thermal resistance, high thermal diffusivity, good luminescence performance and long service life, and the LED module does not require the golden lines and solid crystal glues, thereby having the advantages of high brightness, high luminous efficiency, high reliability, low thermal resistance and color consistency.

Description

The LED module
Technical field
The utility model relates to the LED technical field, relates in particular to a kind of LED module.
Background technology
Light-emitting diode (Light Emitting Diode, LED) be a kind of solid-state semiconductor device that can be light by electric energy conversion, it is widely used in the fields such as display screen, traffic signal, display light source, lamps for vehicle, LED-backlit source and lighting source.
Yet current LED modular structure thermal resistance is large, heat dispersion is poor, and the luminescent properties and the useful life that have affected product are short.
The utility model content
The utility model embodiment technical problem to be solved is, provides a kind of thermal resistance little, the LED module of perfect heat-dissipating.
In order to solve the problems of the technologies described above, the utility model embodiment has proposed a kind of LED module, comprising:
The high heat-conducting ceramic substrate;
The LED chip of upside-down mounting on described substrate;
The box dam formed in described LED chip periphery pressure injection;
The fluorescent adhesive layer that fluorescent glue in being coated on described box dam forms; And
Be coated on the optical structure layers on fluorescent adhesive layer.
Further, described LED chip has a plurality of, and the box dam pressure injection is formed at a plurality of LED chips periphery.The plurality of LEDs integrated chip is packaged with and helps dwindle light source area, reduction material, system cost, and then can to simplify light source be secondary optical design and save the assembling human cost, and impels small product size more compact.As a kind of execution mode, also can adopt the form of single-chip.
Further, described optical structure layers is shaped as hemisphere, square, oval, Fresnel shape, taper shape or regular hexagon.
Further, the P/N electrode welding of LED chip is in the sheet metal of described substrate.
Further, be provided with insulating tape between described P electrode and N electrode.
Correspondingly, the utility model embodiment also provides a kind of manufacture method of LED module, comprise: the upside-down mounting step: adopt eutectic weldering face-down bonding on the sheet metal of high heat-conducting ceramic substrate LED chip, a plurality of LED chips are with predetermined space, predetermined towards evenly distributed.Particularly, adopt ceramic COB (Chip On Board) encapsulation technology, possess the characteristics such as metallic circuit is accurate, structural system is stable, be applicable to the LED module of high power, small size and high brightness, be more suitable for the harsh requirement of eutectic/flip chip assembly process to ceramic substrate metallic circuit resolution and accuracy; Adopt the eutectic welding technology, melting temperature is low, and, without bonding wire, can realize Ultrathin packaging, and processing procedure is simple, with low cost; The LED module has excellent power, heat, light and electrical property.
Pressure injection step: at described LED chip periphery pressure injection box dam.
Coating step: the fluorescent glue configured is coated in box dam to form fluorescent adhesive layer, particularly, adopts the mode of flat coating, photochromic evenly.And
Forming step: outside described box dam, pressure injection forms optical structure layers.
Further, in upside-down mounting step, also comprise:
Help the weldering sub-step: at the sheet metal surface-coated scaling powder of high heat-conducting ceramic substrate, LED chip is adhered on the sheet metal that is coated with scaling powder, wherein, using scaling powder is that LED chip is pre-fixed on described substrate, effect is equivalent to one deck crystal-bonding adhesive, has positioning action; And
The welding sub-step: the high heat-conducting ceramic substrate that will be stained with LED chip is refluxed by the reflow ovens of predetermined temperature.Wherein, reflow ovens is further firmly fixing LED chip by the mode of welding.
Further, described predetermined temperature is 100 degrees centigrade to 360 degrees centigrade.
Further, described LED chip has a plurality of, take a plurality of LED chips as unit outside confined pressure annotate box dam.
Further, adopt silica gel to make box dam and optical structure layers.
The beneficial effect of the LED module of the utility model embodiment is: by adopting LED chip, by eutectic, weld the technological means of face-down bonding on the high heat-conducting ceramic substrate, thereby it is little to have reached thermal resistance, heat dispersion is strong, the good luminous performance of product and the technique effect of long service life.
The accompanying drawing explanation
Fig. 1 is the structural representation of the LED module of the utility model embodiment.
Embodiment
It should be noted that, in the situation that do not conflict, embodiment and the feature in embodiment in the application can mutually combine, and below in conjunction with the drawings and specific embodiments, the utility model are described in further detail.
Please refer to Fig. 1, the utility model embodiment provides a kind of LED module and manufacture method thereof, and described LED module comprises high heat-conducting ceramic substrate 10, LED chip 20, box dam 30, fluorescent adhesive layer 40 and optical structure layers 50.
LED chip 20 eutectic weldering face-down bondings are on described substrate 10.The P/N electrode welding of LED chip 20, in the sheet metal of described substrate 10, particularly, is provided with insulating tape between described P electrode and N electrode.
Box dam 30 pressure injections are formed on described LED chip periphery.Preferably, described LED chip has a plurality of, and box dam 30 pressure injections are formed at a plurality of LED chips 20 peripheries.
The fluorescent glue of fluorescent adhesive layer 40 in being coated on described box dam 30 forms.
Optical structure layers 50 is coated on fluorescent adhesive layer 40, substrate 10.Preferably, described optical structure layers 50 is shaped as hemisphere, square, oval, Fresnel shape, taper shape or regular hexagon.
The LED module making method of the utility model embodiment, comprise upside-down mounting step, pressure injection step, coating step and forming step.
The upside-down mounting step: adopt eutectic weldering face-down bonding on the sheet metal of high heat-conducting ceramic substrate 10 LED chip 20, a plurality of LED chips 20 are with predetermined space, predetermined towards evenly distributed.Preferably, described LED chip has a plurality of, take a plurality of LED chips 20 as unit outside confined pressure annotate box dam 30.As a kind of execution mode, also comprise two sub-steps in the upside-down mounting step:
Help the weldering sub-step: the sheet metal surface-coated scaling powder at high heat-conducting ceramic substrate 10 adheres to LED chip 20 on the sheet metal that is coated with scaling powder; And
The welding sub-step: the high heat-conducting ceramic substrate 10 that will be stained with LED chip 20 is refluxed by the reflow ovens of predetermined temperature.Wherein, described predetermined temperature is 100 degrees centigrade to 360 degrees centigrade.
Pressure injection step: at described LED chip periphery pressure injection box dam 30;
Coating step: the fluorescent glue configured is coated in box dam 30 to form fluorescent adhesive layer 40; And
Forming step: in the outer pressure injection of described box dam 30, form optical structure layers 50.Wherein, adopt silica gel to make box dam 30 and optical structure layers 50.
To sum up, the LED module of the utility model embodiment and the beneficial effect of manufacture method thereof are: by adopting LED chip 20, by eutectic, weld the technological means of face-down bonding on high heat-conducting ceramic substrate 10, thereby it is little to have reached thermal resistance, heat dispersion is strong, the good luminous performance of product and the technique effect of long service life.
Although illustrated and described embodiment of the present utility model, for the ordinary skill in the art, be appreciated that in the situation that do not break away from principle of the present utility model and spirit can be carried out multiple variation, modification, replacement and modification to these embodiment, scope of the present utility model is limited by claims and equivalency range thereof.

Claims (5)

1. a LED module, is characterized in that, comprising:
The high heat-conducting ceramic substrate;
The LED chip of eutectic weldering face-down bonding on described substrate;
The box dam formed in described LED chip periphery pressure injection;
The fluorescent adhesive layer that fluorescent glue in being coated on described box dam forms; And
Be coated on the optical structure layers on fluorescent adhesive layer.
2. LED module according to claim 1, it is characterized in that: described LED chip has a plurality of, and the box dam pressure injection is formed at a plurality of LED chips periphery.
3. LED module according to claim 1 is characterized in that: described optical structure layers be shaped as hemisphere, square, oval, Fresnel shape, taper shape or regular hexagon.
4. according to the described LED module of any one in claims 1 to 3, it is characterized in that: the P/N electrode welding of LED chip is in the sheet metal of described substrate.
5. LED module according to claim 4, is characterized in that: between described P electrode and N electrode, be provided with insulating tape.
CN 201320453761 2013-07-29 2013-07-29 Led module Expired - Fee Related CN203351666U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN 201320453761 CN203351666U (en) 2013-07-29 2013-07-29 Led module

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN 201320453761 CN203351666U (en) 2013-07-29 2013-07-29 Led module

Publications (1)

Publication Number Publication Date
CN203351666U true CN203351666U (en) 2013-12-18

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN 201320453761 Expired - Fee Related CN203351666U (en) 2013-07-29 2013-07-29 Led module

Country Status (1)

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CN (1) CN203351666U (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103400833A (en) * 2013-07-29 2013-11-20 深圳市天电光电科技有限公司 Led module and manufacturing method thereof
CN106876558A (en) * 2017-01-22 2017-06-20 刘庆有 It is a kind of can quick heat radiating LED

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103400833A (en) * 2013-07-29 2013-11-20 深圳市天电光电科技有限公司 Led module and manufacturing method thereof
CN106876558A (en) * 2017-01-22 2017-06-20 刘庆有 It is a kind of can quick heat radiating LED

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Legal Events

Date Code Title Description
C14 Grant of patent or utility model
GR01 Patent grant
TR01 Transfer of patent right

Effective date of registration: 20171013

Address after: The Town Lake Anxi County of Quanzhou City, Fujian province 362411 Photoelectric Industrial Park

Patentee after: FUJIAN LIGHTNING OPTOELECTRONIC CO., LTD.

Address before: Baoan District Shiyan street Shenzhen city Guangdong province 518000 South Road community should be one stone Wentao Science Park building B

Patentee before: Lighting Optoectronic(SZ) Co., Ltd.

TR01 Transfer of patent right
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20131218

Termination date: 20200729

CF01 Termination of patent right due to non-payment of annual fee