CN103904172A - Method for welding LED chip to ceramic body through ultrasonic waves at normal temperature - Google Patents

Method for welding LED chip to ceramic body through ultrasonic waves at normal temperature Download PDF

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Publication number
CN103904172A
CN103904172A CN201410102312.3A CN201410102312A CN103904172A CN 103904172 A CN103904172 A CN 103904172A CN 201410102312 A CN201410102312 A CN 201410102312A CN 103904172 A CN103904172 A CN 103904172A
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CN
China
Prior art keywords
ceramic body
led chip
welding
silver
soldering dish
Prior art date
Application number
CN201410102312.3A
Other languages
Chinese (zh)
Inventor
何永祥
席科
贾浩巍
胡民花
Original Assignee
浙江竞达齐泰科技有限公司
杭州普朗克电子科技有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 浙江竞达齐泰科技有限公司, 杭州普朗克电子科技有限公司 filed Critical 浙江竞达齐泰科技有限公司
Priority to CN201410102312.3A priority Critical patent/CN103904172A/en
Publication of CN103904172A publication Critical patent/CN103904172A/en

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Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/48Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814Conductive parts
    • H01L21/4846Leads on or in insulating or insulated substrates, e.g. metallisation
    • H01L21/4867Applying pastes or inks, e.g. screen printing
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/81Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/811Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector the bump connector being supplied to the parts to be connected in the bonding apparatus
    • H01L2224/81101Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector the bump connector being supplied to the parts to be connected in the bonding apparatus as prepeg comprising a bump connector, e.g. provided in an insulating plate member
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2933/00Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008Processes
    • H01L2933/0066Processes relating to arrangements for conducting electric current to or from the semiconductor body

Abstract

The invention discloses a method for welding an LED chip to a ceramic body through ultrasonic waves at a normal temperature. The method includes the steps of conducting screen printing on the ceramic body through silver palladium alloy slurry by means of a template, sending the ceramic body into a ceramic sintering furnace to be sintered at a high temperature so that a welding disc circuit formed by the silver palladium alloy slurry can be tightly combined with the ceramic body, welding a welding disc on the ceramic body to an electrode of the LED chip through the ultrasonic waves by means of alloy wires or gold wires so that current of a power supply can flow into the LED chip from the welding disc of the ceramic body through the alloy wires or the gold wires and enable the LED chip to work. Due to the fact that high-temperature tin soldering at the temperature of 200 DEG C or higher such as reflow soldering is avoided, the LED chip is protected, the service life of the LED chip is greatly prolonged, supports, printing plates and other materials are reduced, the processes such as the support arranging process, the reflow soldering process and the circuit printing process are reduced, and high practical value is achieved.

Description

A kind of method of normal temperature ultrasonic bonding LED chip on ceramic body

Technical field

The present invention relates to the welding processing technical field of LED chip, relate in particular to the method for normal temperature ultrasonic bonding LED chip on a kind of ceramic body.

Background technology

Along with country is to energy-conservation attention, especially developing rapidly of LED industry, more and more higher to LED life requirements, and the welding of the chip of LED on ceramic body material is quite important, because ceramic body material both to meet thermal conductivity high, corrosion-resistant, high temperature resistant, wear-resistant, meet again the requirement of insulation and hyperfrequency.But the chip class of LED is more enervated, the working temperature of the general civilian level of chip: 0 ~+70 degree; Technical grade :-40 ~+85 degree; Automotive grade :-40 ~+125 degree; Army grade :-55 ~+125.If by current conventional Reflow Soldering or wave-soldering, welding temperature all exceedes 200 degree, and the temperature that exceedes 100 degree at least more than a few minutes, causes certain infringement to the chip of various integrated circuits and LED, light life-span of damage influence chip, heavy directly scrap; And adopt common soldering mode, and need support and a large amount of soldering tin material of chip, also have the techniques such as encapsulation, printing and Reflow Soldering simultaneously.

Summary of the invention

The object of the invention is for the deficiencies in the prior art, and the method for normal temperature ultrasonic bonding LED chip on a kind of ceramic body is provided.

The object of this method is achieved through the following technical solutions: a kind of method of normal temperature ultrasonic bonding LED chip on ceramic body, and the method comprises the following steps:

(1) form welding silver soldering dish and heat conduction silver soldering dish at ceramic body sintering palladium-silver, this step comprises following sub-step:

(1.1) silk screen printing: the masterplate of first manufacturing heat conduction silver soldering dish, welding silver soldering dish, on silk screen, be coated with photoresists, then masterplate is placed on photoresists, expose by exposure machine, silk screen cope match-plate pattern exposes beyond covering part, photoresists solidify, and that masterplate covers part is light tight, and the photoresists that template covers part are due to light tight and do not solidify; Water rinses, wash away unexposed portion, adopt again silver-colored palladium to starch as ink, silk screen is placed on ceramic body and is printed, silver-colored palladium slurry is imprinted on ceramic body, is transmission because silk screen cope match-plate pattern covers part, so silver-colored palladium slurry is just imprinted on relevant position on ceramic body, and remainder is because there is rubber seal to live, silver-colored palladium slurry does not just stamp;

(1.2) sintering of ceramic body: ceramic body sintering in ceramic sintering furnace that step (1.1) is printed, make to form good fusion between silver-colored palladium slurry and ceramic body, after sintering, form silver-colored sintering aspect and form welding silver soldering dish, heat conduction silver soldering dish; Silver soldering dish after sintering exceeds 15 microns-20 microns of ceramic bodies;

(2) gluing and fixed chip: thermal plastic insulation is coated on heat conduction silver soldering dish; LED chip is placed in above the thermal plastic insulation on corresponding thermal land with the suction nozzle of ultrasonic welding machine;

(3) ultrasonic bonding: the two ends that B alloy wire or spun gold are overlapped on respectively to welding silver soldering dish and the LED chip electrode of ceramic body on ultrasonic welding machine, use the vibration energy of ultrasonic welding machine, respectively B alloy wire or spun gold and the welding of welding silver soldering dish, B alloy wire or spun gold and LED chip electrode welding, LED chip and the circuit turn-on that welds silver soldering dish after welding;

(4) encapsulating is fixed: for entirety is fixed, encapsulating is carried out in the position lower than LED chip, add one deck encapsulation heat-conducting glue by point gum machine, make entirety fixing, can make heating evenly simultaneously;

(5) print reflector layer: in the time of encapsulating quick-drying, coat mirror plastic, increase the albedo of LED.

The invention has the beneficial effects as follows, we are bright adopts ultrasonic bonding to ceramic body, welding process both no current flows through in welded body, also produce without high temperature, protect electronic chip, extended greatly, the especially welding to the most hard-to-weld aluminium and ceramic body in the chip life-span, more can give prominence to superiority of the present invention, and reduce and have lead contamination; In addition reduce the techniques such as the material such as support, printed panel and binding bracket, Reflow Soldering, printed wire, had very high practical value.

Accompanying drawing explanation

The schematic diagram of ceramic body and silver soldering dish when Fig. 1 is welding;

Fig. 2 is the LED chip profile after welding;

In figure, ceramic body 1, welding silver soldering dish 2, heat conduction silver soldering dish 3, thermal plastic insulation 4, LED chip 5, LED chip electrode 6, B alloy wire or spun gold 7, encapsulation heat-conducting glue 8, mirror plastic 9.

Embodiment

Describe the present invention in detail below in conjunction with drawings and Examples, it is more obvious that object of the present invention and effect will become.

The method of normal temperature ultrasonic bonding LED chip on ceramic body of the present invention, comprises the following steps:

(1) form welding silver soldering dish 2 and heat conduction silver soldering dish 3 at ceramic body 1 sintering palladium-silver, this step comprises following sub-step:

(1.1) silk screen printing: the masterplate of first manufacturing heat conduction silver soldering dish 2, welding silver soldering dish 3, on silk screen, be coated with photoresists, then masterplate is placed on photoresists, expose by exposure machine, silk screen cope match-plate pattern exposes beyond covering part, photoresists solidify, and that masterplate covers part is light tight, and the photoresists that template covers part are due to light tight and do not solidify; Water rinses, wash away unexposed portion, adopt again silver-colored palladium to starch as ink, silk screen is placed on ceramic body and is printed, silver-colored palladium slurry is imprinted on ceramic body, is transmission because silk screen cope match-plate pattern covers part, so silver-colored palladium slurry is just imprinted on relevant position on ceramic body, and remainder is because there is rubber seal to live, silver-colored palladium slurry does not just stamp.

(1.2) sintering of ceramic body 1: ceramic body 1 sintering in ceramic sintering furnace that step (1.1) is printed, make to form good fusion between silver-colored palladium slurry and ceramic body 1, after sintering, form silver-colored sintering aspect and form welding silver soldering dish 2, heat conduction silver soldering dish 3, as shown in Figure 1.Silver soldering dish after sintering exceeds 15 microns-20 microns of ceramic bodies.

(2) gluing and fixed chip: as shown in Figure 2, adopting the Kunshan million single-component room temperature vulcanized silicone adhesive sticks of electronic material Science and Technology Ltd. of section is that thermal plastic insulation 4 is coated on heat conduction silver soldering dish 3; The suction nozzle of LED chip 5 use ultrasonic welding machines is placed in above the thermal plastic insulation 4 on corresponding thermal land 3.

(3) ultrasonic bonding: on ultrasonic welding machine, B alloy wire or spun gold 7 are overlapped on respectively to the welding silver soldering dish 2 of ceramic body 1 and the two ends of LED chip electrode 6, use the vibration energy of ultrasonic welding machine, respectively B alloy wire or spun gold 7 are welded with welding silver soldering dish 2, B alloy wire or spun gold 7 weld with LED chip electrode 6, B alloy wire or spun gold 7 moderate length while noting ultrasonic bonding, oversizely will cause interference, position must eachly want consistent, otherwise parameter is inconsistent.LED chip 5 after welding, because the circuit forming with welding silver soldering dish 2 is connected, can be how many with dynamometer beta alloy silk or spun gold bearing tension, generally needs 5g left and right.

(4) encapsulating is fixed: for entirety is fixed, encapsulating is carried out in the position lower than LED chip 5, add one deck encapsulation heat-conducting glue 8 by point gum machine, make entirety fixing, can make heating evenly simultaneously.

(5) print reflector layer: in the time of encapsulating quick-drying, coat mirror plastic 9, increase the albedo of LED.

Claims (1)

1. a method for normal temperature ultrasonic bonding LED chip on ceramic body, is characterized in that, the method comprises the following steps:
(1) form welding silver soldering dish and heat conduction silver soldering dish at ceramic body sintering palladium-silver, this step comprises following sub-step:
(1.1) silk screen printing: the masterplate of first manufacturing heat conduction silver soldering dish, welding silver soldering dish, on silk screen, be coated with photoresists, then masterplate is placed on photoresists, expose by exposure machine, silk screen cope match-plate pattern exposes beyond covering part, photoresists solidify, and that masterplate covers part is light tight, and the photoresists that template covers part are due to light tight and do not solidify; Water rinses, wash away unexposed portion, adopt again silver-colored palladium to starch as ink, silk screen is placed on ceramic body and is printed, silver-colored palladium slurry is imprinted on ceramic body, is transmission because silk screen cope match-plate pattern covers part, so silver-colored palladium slurry is just imprinted on relevant position on ceramic body, and remainder is because there is rubber seal to live, silver-colored palladium slurry does not just stamp;
(1.2) sintering of ceramic body: ceramic body sintering in ceramic sintering furnace that step (1.1) is printed, make to form good fusion between silver-colored palladium slurry and ceramic body, after sintering, form silver-colored sintering aspect and form welding silver soldering dish, heat conduction silver soldering dish; Silver soldering dish after sintering exceeds 15 microns-20 microns of ceramic bodies;
(2) gluing and fixed chip: thermal plastic insulation is coated on heat conduction silver soldering dish; LED chip is placed in above the thermal plastic insulation on corresponding thermal land with the suction nozzle of ultrasonic welding machine;
(3) ultrasonic bonding: the two ends that B alloy wire or spun gold are overlapped on respectively to welding silver soldering dish and the LED chip electrode of ceramic body on ultrasonic welding machine, use the vibration energy of ultrasonic welding machine, respectively B alloy wire or spun gold and the welding of welding silver soldering dish, B alloy wire or spun gold and LED chip electrode welding, LED chip and the circuit turn-on that welds silver soldering dish after welding;
(4) encapsulating is fixed: for entirety is fixed, encapsulating is carried out in the position lower than LED chip, add one deck encapsulation heat-conducting glue by point gum machine, make entirety fixing, can make heating evenly simultaneously;
(5) print reflector layer: in the time of encapsulating quick-drying, coat mirror plastic, increase the albedo of LED.
CN201410102312.3A 2014-03-19 2014-03-19 Method for welding LED chip to ceramic body through ultrasonic waves at normal temperature CN103904172A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201410102312.3A CN103904172A (en) 2014-03-19 2014-03-19 Method for welding LED chip to ceramic body through ultrasonic waves at normal temperature

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Application Number Priority Date Filing Date Title
CN201410102312.3A CN103904172A (en) 2014-03-19 2014-03-19 Method for welding LED chip to ceramic body through ultrasonic waves at normal temperature

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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105237026A (en) * 2015-11-12 2016-01-13 天津理工大学 Ceramic/ceramic connection method for regulating and controlling middle solder layer through multi-physical-field coupling
CN105280788A (en) * 2015-09-17 2016-01-27 上海大学 LED supersonic packaging method
CN105338734A (en) * 2015-11-03 2016-02-17 畅博电子(上海)有限公司 Ceramic substrate circuit board and manufacturing method thereof
CN106187322A (en) * 2016-07-11 2016-12-07 江苏时瑞电子科技有限公司 A kind of multichip ceramic body two-sided painting silver silver ink firing method
CN106552990A (en) * 2016-09-13 2017-04-05 武汉理工大学 A kind of inside micro-bonding method of paster potentiometer
CN107768499A (en) * 2016-08-22 2018-03-06 三星电子株式会社 The method for manufacturing light-emitting diode (LED) module

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CN101592291A (en) * 2009-06-26 2009-12-02 惠州市斯科电气照明有限公司 Method for manufacturing color temperature tunable LED lamp and LED lamp
CN101859826A (en) * 2009-04-07 2010-10-13 山东璨圆光电科技有限公司 Fixing method and structure of light-emitting diode (LED) wafer
CN102163928A (en) * 2011-01-13 2011-08-24 常州西整电子科技有限公司 Special ultrahigh-power rectification power electronic device module for ultrasonic welding machine
CN103216746A (en) * 2012-01-20 2013-07-24 东莞市万丰纳米材料有限公司 Light source module and preparation method thereof
CN203312358U (en) * 2013-05-11 2013-11-27 东莞市中之光电科技有限公司 LED chip inverted packaging structure

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JPS5575282A (en) * 1978-12-01 1980-06-06 Fujitsu Ltd Manufacturing method of semiconductor laser device
CN85109678A (en) * 1984-12-21 1986-08-13 菲利浦光灯制造公司 Housing for an electronic device
CN201121850Y (en) * 2007-12-01 2008-09-24 中山市晶明光电科技有限公司 LED lattice module
CN101859826A (en) * 2009-04-07 2010-10-13 山东璨圆光电科技有限公司 Fixing method and structure of light-emitting diode (LED) wafer
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CN103216746A (en) * 2012-01-20 2013-07-24 东莞市万丰纳米材料有限公司 Light source module and preparation method thereof
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Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105280788A (en) * 2015-09-17 2016-01-27 上海大学 LED supersonic packaging method
CN105338734A (en) * 2015-11-03 2016-02-17 畅博电子(上海)有限公司 Ceramic substrate circuit board and manufacturing method thereof
CN105338734B (en) * 2015-11-03 2019-05-21 畅博电子(上海)有限公司 Ceramic substrate circuit board and its manufacturing method
CN105237026A (en) * 2015-11-12 2016-01-13 天津理工大学 Ceramic/ceramic connection method for regulating and controlling middle solder layer through multi-physical-field coupling
CN106187322A (en) * 2016-07-11 2016-12-07 江苏时瑞电子科技有限公司 A kind of multichip ceramic body two-sided painting silver silver ink firing method
CN106187322B (en) * 2016-07-11 2019-03-15 江苏时瑞电子科技有限公司 A kind of two-sided painting silver silver ink firing method of multichip ceramic body
CN107768499A (en) * 2016-08-22 2018-03-06 三星电子株式会社 The method for manufacturing light-emitting diode (LED) module
CN106552990A (en) * 2016-09-13 2017-04-05 武汉理工大学 A kind of inside micro-bonding method of paster potentiometer

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