CN203377258U - Bicrystal patch LED encapsulation structure for raising light-emitting efficiency - Google Patents
Bicrystal patch LED encapsulation structure for raising light-emitting efficiency Download PDFInfo
- Publication number
- CN203377258U CN203377258U CN201320410923.5U CN201320410923U CN203377258U CN 203377258 U CN203377258 U CN 203377258U CN 201320410923 U CN201320410923 U CN 201320410923U CN 203377258 U CN203377258 U CN 203377258U
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- CN
- China
- Prior art keywords
- bicrystal
- led
- twin crystal
- groove
- patch led
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
Abstract
The utility model discloses a bicrystal patch LED encapsulation structure for raising light-emitting efficiency. The bicrystal patch LED encapsulation structure comprises LED brackets and chips arranged in the LED brackets. The structure is characterized in that the LED brackets are two inverted trapezoidal groove cup structures, the chips are arranged in two independent groove cups respectively, the positive surfaces of the bottoms of the two groove cups are provided with silver plated layers, and the surface of a slightly convex part between the two groove cups is provided with a PPA layer. The bicrystal patch LED encapsulation structure has the advantage of reasonable design, the luminous angle of a bicrystal patch LED can be raised and a heat dissipation area is increased, the structure is suitable for the encapsulation of the bicrystal patch LED, and the development of the bicrystal patch LED is facilitated.
Description
Technical field
The utility model belongs to technical field of semiconductor illumination, relates to a kind of twin crystal paster LED encapsulating structure that improves luminous efficiency.
Background technology
At present in order to reduce costs, improve light efficiency, reduce the photoelectricity loss, reach high cost performance, more and more light fixture producer tends to use the twin crystal paster LED of series connection high pressure, the development of twin crystal paster LED comes into one's own increasingly, and existing twin crystal paster LED is generally all used conventional paster LED bracket, sees shown in Fig. 1, Fig. 2.Lighting angle is limited, can't efficiently radiates heat, and greatly reduce like this luminous efficiency and the useful life of twin crystal paster LED, thereby hindered the development of twin crystal paster LED.
The utility model content
The purpose of this utility model is to provide a kind of twin crystal paster LED encapsulating structure that can improve luminous efficiency, this structure can overcome above shortcomings in prior art, twin crystal paster LED encapsulating structure is reasonable in design, can improve lighting angle the increasing heat radiation area of twin crystal paster LED, be applicable to the encapsulation of twin crystal paster LED, be conducive to the development of twin crystal paster LED.
The technical scheme in the invention for solving the above technical problem is:
A kind of twin crystal paster LED encapsulating structure that improves luminous efficiency, comprise LED support, and be arranged on the chip in described LED support, it is characterized in that, described LED support is two inverted trapezoidal groove cup structures; Chip is placed in respectively two independently groove cups, and the front surface of two groove bowl cups bottom is provided with silver coating, and the part surface that between two groove bowl cups, dimpling goes out is provided with the PPA layer.
The beneficial effects of the utility model are, this kind of twin crystal paster LED method for packing not only can increase the lighting angle of twin crystal paster LED, and can increase the area of dissipation of twin crystal paster LED, thereby luminous efficiency and the reliability of twin crystal LED have been improved, not only improve the lighting angle of traditional twin crystal paster LED, also increased life-span and the stability of twin crystal LED.
Of the present utility model simple in structure, reasonable in design, be conducive to the better development of twin crystal paster LED.
The accompanying drawing explanation
Fig. 1 is traditional twin crystal LED support schematic side view.
Fig. 2 is traditional high-pressure series twin crystal LED method for packing schematic diagram.
Fig. 3 is the twin crystal LED support schematic side view that the utility model embodiment provides.
Fig. 4 is the high-pressure series twin crystal LED method for packing schematic diagram that the utility model embodiment provides.
Embodiment
Below in conjunction with the drawings and specific embodiments, the present invention or utility model are elaborated.
Refer to Fig. 3 and Fig. 4, the twin crystal LED support schematic side view that the utility model embodiment provides and twin crystal LED encapsulating structure schematic diagram, this improves the twin crystal paster LED encapsulating structure of luminous efficiency, comprise LED support 1, and be arranged on the chip 2 in described LED support 1, described LED support 1 is different from traditional paster LED bracket, is designed to two inverted trapezoidal groove cup 3 structures; Chip 2(chip one and chip two) be placed in respectively two independently bowl cups, and the bowl cup is designed to the shape of the recessed middle dimpling in both sides, two groove wall of cups all are designed to inverted trapezoidal, the front surface of two bottom portion of groove bowl cups is silver coating, be used for chip placement one and chip two, the part that in the middle of two bowl cups, dimpling goes out is the PPA layer, and cup and bowl wall has certain gradient, with this, increases lighting angle; And each groove back of frame bottom is designed with fin, the area of dissipation of the more traditional paster LED bracket of area of dissipation increases, and is conducive to the heat radiation of dual chip.When die bond, two chips are placed on respectively independently to the bowl cup, during bonding wire by two chips series connection, after a glue, baking, can obtain the series connection high pressure twin crystal paster LED that the luminous efficiency high reliability is good.
The twin crystal paster LED encapsulating structure that the utility model embodiment provides, it is provided with two independent bowl cups placing twin crystal, and cup and bowl wall is gradient type, there is not fin two independent bowl bottoms of the cup, the twin crystal LED encapsulated like this lights rear rising angle and area of dissipation all increases, greatly improve luminous efficiency and the reliability of twin crystal paster LED, be applicable to twin crystal LED encapsulation.
The foregoing is only preferred embodiment of the present utility model; not in order to limit the utility model; all any modifications of doing within spirit of the present utility model and principle, be equal to and replace and improvement etc., within all should being included in protection range of the present utility model.
Claims (1)
1. a twin crystal paster LED encapsulating structure that improves luminous efficiency, comprise LED support, and be arranged on the chip in described LED support, it is characterized in that, described LED support is two inverted trapezoidal groove cup structures; Chip is placed in respectively two independently groove cups, and the front surface of two groove bowl cups bottom is provided with silver coating, and the part surface that between two groove bowl cups, dimpling goes out is provided with the PPA layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320410923.5U CN203377258U (en) | 2013-07-10 | 2013-07-10 | Bicrystal patch LED encapsulation structure for raising light-emitting efficiency |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320410923.5U CN203377258U (en) | 2013-07-10 | 2013-07-10 | Bicrystal patch LED encapsulation structure for raising light-emitting efficiency |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203377258U true CN203377258U (en) | 2014-01-01 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201320410923.5U Expired - Fee Related CN203377258U (en) | 2013-07-10 | 2013-07-10 | Bicrystal patch LED encapsulation structure for raising light-emitting efficiency |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203377258U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106816515A (en) * | 2015-11-30 | 2017-06-09 | 郑州森源新能源科技有限公司 | A kind of efficient paster LED encapsulating structure |
-
2013
- 2013-07-10 CN CN201320410923.5U patent/CN203377258U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106816515A (en) * | 2015-11-30 | 2017-06-09 | 郑州森源新能源科技有限公司 | A kind of efficient paster LED encapsulating structure |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20140101 Termination date: 20180710 |