CN204927326U

CN204927326U - Adopt face down chip's high finger LED fluorescent tube that shows of high light efficiency

Info

Publication number: CN204927326U
Application number: CN201520277352.1U
Authority: CN
Inventors: 赵兴; 陆利兵; 邵丽娟
Original assignee: Suzhou Baiaoli Optoelectronic Technology Co Ltd
Current assignee: Suzhou Baiaoli Optoelectronic Technology Co Ltd
Priority date: 2015-05-04
Filing date: 2015-05-04
Publication date: 2015-12-30
Anticipated expiration: 2025-05-04

Abstract

The utility model discloses an adopt face down chip's high finger LED fluorescent tube that shows of high light efficiency, including the fluorescent tube shell, the fluorescent tube shell is built -in to have the base plate, is fixed with a plurality of blue light chips and ruddiness chip on the base plate, and blue light chip and ruddiness chip are the face down chip form, and the ruddiness chip is the blue light wavelength of two electricity levels or single electricity level chip, blue light chip: 440-470nm, the ruddiness wavelength of ruddiness chip: 600-650nm. The utility model discloses the LED lamp that forms is when improving apparent the finger, and the light efficiency loss is little, and the light decay is little, and is with low costs. The utility model discloses a blue light chip or ruddiness chip and the base plate adoption eutectic mode of welding are fixed, toast and this twice process of bonding wire after need not solid crystalline substance.

Description

A kind of specular removal height aobvious finger LED lamp tube adopting flip-chip

Technical field

The utility model relates to a kind of specular removal height aobvious finger LED lamp tube adopting flip-chip.

Background technology

At present LED lamp tube is on the market fixed on by the wiring board posting LEDSMD light source partly to mould in half aluminium aluminium or overall plastic or clear glass or coating glass is circular or in oval pipe, add driving power to reach illumination effect.Light source used herein is generally that industry is referred to as the packaged light source such as 2835,30145730.

The prior art of another kind of form is: be fixed on by positive cartridge chip on the wiring board designed by die bond board, the conventional wiring board length adopted is at 0.3m, toast-bonding wire-glue-baking-test again, such making product sequence is many and numerous and diverse, thus processing cost is high, this is the technology encapsulating factory's employing at present.The COB strip source of 0.3m is passed through the LED lamp tube of superposition composition 0.6 meter or 0.9m or 1.2m or 1.5m by lamps & lanterns factory again.This fluorescent tube light efficiency is low, and be up to 80% before aobvious feeling the pulse with the finger-tip, cost is high, but aobvious finger also causes light efficiency loss large while improving, and light decay is large, and the costs such as encapsulation, lead frame are higher.

In existing product, can only by increasing the quantity of lamp pearl in order to obtain specular removal height aobvious finger, high-power lamp pearl is used to fall electric current to improve the light efficiency of fluorescent tube, such scheme cost is high, has no novelty, Ge Jia lamps & lanterns factory suffers from by encapsulation factory's packing forms and the circumscribed puzzlement of prior art, and light fixture product cannot break through currently available technology.

Utility model content

The technical problems to be solved in the utility model is: overcome the deficiencies in the prior art, and provide a kind of and adopt the high aobvious finger LED lamp tube of the specular removal of flip-chip, can realize the aobvious finger of specular removal height, and light decay is little, cost is low.

The utility model solves the technical scheme that its technical problem adopts: a kind ofly adopt that the specular removal height of flip-chip is aobvious refers to LED lamp tube, comprise tube housing, described tube housing is built-in with substrate, described substrate is fixed with multiple blue chip and red light chips, described blue chip and red light chips are flip chip version, described red light chips is two electric level or single electric level chip, the blue light wavelength of described blue chip: 440 ~ 470nm, the red light wavelength of described red light chips: 600 ~ 650nm.

Further, described blue chip and red light chips entirety scribble fluorescent glue by packaging technology, or, the chip monomer of described blue chip or red light chips scribbles fluorescent glue.

Further, the quantitative proportion of described blue chip and red light chips is 3:1, and every three blue chips are arranged in order, and each red light chips comes every three blue chip sides.

Further, the upper surface of described blue chip or red light chips scribbles the encapsulation glue at room temperature namely solidified.

Further, described blue chip or red light chips comprise jewel layer, and described jewel layer lower surface is provided with n-GaN layer; Described n-GaN layer lower surface is divided into the first contact-segment and the second contact-segment, described first contact-segment lower surface is provided with a P-GaN layer, a described P-GaN layer lower surface is provided with the first reflector layer, be surrounded by the first insulating barrier outside a described P-GaN layer and the first reflector layer, the P electrode of LED flip chip is positioned at the first insulating barrier lower surface and contacts with the first reflector layer;

Second contact-segment lower surface of described n-GaN layer is provided with at least one the 2nd P-GaN layer, described 2nd P-GaN layer lower surface is provided with the second reflector layer, be surrounded by the second insulating barrier outside described 2nd P-GaN layer and the second reflector layer, the N electrode of LED flip chip is positioned at the second insulating barrier lower surface and contacts with n-GaN layer;

The P electrode of described blue chip or red light chips, N electrode and substrate adopt the eutectic mode of weldering to fix.

Further, the second contact-segment lower surface of described n-GaN layer is provided with two spaced 2nd P-GaN layers, and each 2nd P-GaN layer lower surface is equipped with the second reflector layer, and each 2nd P-GaN layer and the second reflector layer outsourcing all have the second insulating barrier.

Further, the driving power be connected with substrate is provided with in described tube housing.

Further, described substrate length is 0.6 meter or 0.9 meter or 1.2 meters or 1.5 meters.

The beneficial effects of the utility model are: the flip-chip be fixed in the utility model on substrate has two kinds: 1) blue chip, 2) red light chips, preferred blue light: ruddiness=3:1, blue chip wavelength: 440 ~ 470nm; Red light chips wavelength is 600 ~ 650nm, can form a special wave band like this, make formed LED raising is aobvious refer to while, light efficiency loss is little, and light decay is little, and cost is low.

Adopt the encapsulation glue namely solidified under room temperature condition, solve because the long need of substrate separately add the problem of baking box, before encapsulating, substrate is carried out horizontal adjustment, operate under the state making it the level that remains on, also make encapsulation glue cover uniformity better.

Blue chip of the present utility model or red light chips and substrate adopt the eutectic mode of weldering to fix, without the need to baking and this two procedures of bonding wire after die bond.

Accompanying drawing explanation

Below in conjunction with accompanying drawing, the utility model is further illustrated.

Fig. 1 is structural representation of the present utility model;

Fig. 2 is the structural representation of blue chip or red light chips in the utility model.

Wherein: 2, tube housing, 3, substrate, 4, blue chip, 5, red light chips, 7.P electrode, 8.N electrode, 9.n-GaN layer, 10. a P-GaN layer, 11. first reflector layers, 12. jewel layers, 13, the first insulating barrier, the 14, the 2nd P-GaN layer, the 15, second reflector layer, the 16, second insulating barrier.

Embodiment

By reference to the accompanying drawings the utility model is further described now.The schematic diagram that these accompanying drawings are simplification only illustrates basic structure of the present utility model in a schematic way, and therefore it only shows the formation relevant with the utility model.

As shown in Figure 1 and Figure 2, a kind of specular removal height aobvious finger LED lamp tube adopting flip-chip, comprise tube housing 2, described tube housing 2 is built-in with substrate 3, described substrate 3 is fixed with multiple blue chip 4 and red light chips 5, and described blue chip 4 and red light chips 5 are flip chip version, and described red light chips 5 is two electric level or single electric level chip, the blue light wavelength of described blue chip: 440 ~ 470nm, the red light wavelength of described red light chips: 600 ~ 650nm.

Described blue chip 4 and red light chips 5 entirety scribble fluorescent glue by packaging technology, or, the chip monomer of described blue chip 4 or red light chips 5 scribbles fluorescent glue.

The quantitative proportion of described blue chip 4 and red light chips 5 is 3:1, and every three blue chips 4 are arranged in order, and each red light chips 5 comes every three blue chip 4 sides.

The upper surface of described blue chip 4 or red light chips 5 scribbles the encapsulation glue at room temperature namely solidified.

Described blue chip 4 or red light chips 5 comprise jewel layer 12, and described jewel layer 12 lower surface is provided with n-GaN layer 9; Described n-GaN layer 9 lower surface is divided into the first contact-segment and the second contact-segment, described first contact-segment lower surface is provided with a P-GaN layer 10, described P-GaN layer 10 lower surface is provided with the first reflector layer 11, be surrounded by the first insulating barrier 13 outside a described P-GaN layer 10 and the first reflector layer 11, the P electrode 7 of LED flip chip is positioned at the first insulating barrier 13 lower surface and contacts with the first reflector layer 11;

Second contact-segment lower surface of described n-GaN layer 9 is provided with at least one the 2nd P-GaN layer 14, described 2nd P-GaN layer 14 lower surface is provided with the second reflector layer 15, be surrounded by the second insulating barrier 16 outside described 2nd P-GaN layer 14 and the second reflector layer 15, the N electrode 8 of LED flip chip is positioned at the second insulating barrier 16 lower surface and contacts with n-GaN layer 9.

P electrode 7, the N electrode 8 of described blue chip 4 or red light chips 5 adopt the eutectic mode of weldering to fix with substrate 3.

Second contact-segment lower surface of described n-GaN layer 9 is provided with two spaced 2nd P-GaN layers 14, each 2nd P-GaN layer 14 lower surface is equipped with the second reflector layer 15, and each 2nd P-GaN layer 14 and the second reflector layer 15 outsourcing all have the second insulating barrier (16).

The driving power be connected with substrate 3 is provided with in described tube housing 2.

Described substrate length is 0.6 meter or 0.9 meter or 1.2 meters or 1.5 meters.

The flip-chip be fixed in the utility model on substrate has two kinds: 1 blue chip, 2) red light chips, preferred blue light: ruddiness=3:1, blue chip wavelength: 440 ~ 470nm; Red light chips wavelength is 600 ~ 650nm, can form a special wave band like this, make formed LED raising is aobvious refer to while, light efficiency loss is little, and light decay is little, and cost is low.

With above-mentioned according to desirable embodiment of the present utility model for enlightenment, by above-mentioned description, relevant staff in the scope not departing from this utility model technological thought, can carry out various change and amendment completely.The technical scope of this utility model is not limited to the content on specification, must determine its technical scope according to right.

Claims

1. one kind adopts the specular removal height aobvious finger LED lamp tube of flip-chip, comprise tube housing (2), described tube housing (2) is built-in with substrate (3), it is characterized in that: described substrate (3) is fixed with multiple blue chip (4) and red light chips (5), described blue chip (4) and red light chips (5) are flip chip version, described red light chips (5) is two electric level or single electric level chip, the blue light wavelength of described blue chip: 440 ~ 470nm, the red light wavelength of described red light chips: 600 ~ 650nm.

2. a kind of specular removal height aobvious finger LED lamp tube adopting flip-chip according to claim 1, it is characterized in that: described blue chip (4) and red light chips (5) entirety scribble fluorescent glue by packaging technology, or, the chip monomer of described blue chip (4) or red light chips (5) is coated with fluorescent glue.

3. a kind of specular removal height aobvious finger LED lamp tube adopting flip-chip according to claim 1, it is characterized in that: the quantitative proportion of described blue chip (4) and red light chips (5) is 3:1, every three blue chips (4) are arranged in order, and each red light chips (5) comes every three blue chip (4) sides.

4. a kind of specular removal height aobvious finger LED lamp tube adopting flip-chip according to claim 1, is characterized in that: the upper surface of described blue chip (4) or red light chips (5) scribbles the encapsulation glue at room temperature namely solidified.

5. a kind of specular removal height aobvious finger LED lamp tube adopting flip-chip according to claim 1, it is characterized in that: described blue chip (4) or red light chips (5) comprise jewel layer (12), described jewel layer (12) lower surface is provided with n-GaN layer (9); Described n-GaN layer (9) lower surface is divided into the first contact-segment and the second contact-segment, described first contact-segment lower surface is provided with a P-GaN layer (10), described P-GaN layer (10) lower surface is provided with the first reflector layer (11), be surrounded by the first insulating barrier (13) outside a described P-GaN layer (10) and the first reflector layer (11), the P electrode (7) of LED flip chip is positioned at the first insulating barrier (13) lower surface and contacts with the first reflector layer (11);

Second contact-segment lower surface of described n-GaN layer (9) is provided with at least one the 2nd P-GaN layer (14), described 2nd P-GaN layer (14) lower surface is provided with the second reflector layer (15), be surrounded by the second insulating barrier (16) outside described 2nd P-GaN layer (14) and the second reflector layer (15), the N electrode (8) of LED flip chip is positioned at the second insulating barrier (16) lower surface and contacts with n-GaN layer (9);

P electrode (7), the N electrode (8) of described blue chip (4) or red light chips (5) adopt the eutectic mode of weldering to fix with substrate (3).

6. a kind of specular removal height aobvious finger LED lamp tube adopting flip-chip according to claim 5, it is characterized in that: the second contact-segment lower surface of described n-GaN layer is provided with two spaced 2nd P-GaN layers, each 2nd P-GaN layer lower surface is equipped with the second reflector layer, and each 2nd P-GaN layer and the second reflector layer outsourcing all have the second insulating barrier.

7. a kind of specular removal height aobvious finger LED lamp tube adopting flip-chip according to claim 1, is characterized in that: be provided with the driving power be connected with substrate (3) in described tube housing (2).

8. a kind of specular removal height aobvious finger LED lamp tube adopting flip-chip according to claim 1, is characterized in that: described substrate length is 0.6 meter or 0.9 meter or 1.2 meters or 1.5 meters.