CN102800776A - Snowflake-shaped LED (Light-Emitting Diode) electrode structure - Google Patents
Snowflake-shaped LED (Light-Emitting Diode) electrode structure Download PDFInfo
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- CN102800776A CN102800776A CN2012101707951A CN201210170795A CN102800776A CN 102800776 A CN102800776 A CN 102800776A CN 2012101707951 A CN2012101707951 A CN 2012101707951A CN 201210170795 A CN201210170795 A CN 201210170795A CN 102800776 A CN102800776 A CN 102800776A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
Abstract
The invention discloses a snowflake-shaped LED (Light-Emitting Diode) electrode structure, comprising at least one contact part and at least one crossed part. The crossed part passes through the contact part, and is symmetrically distributed at the both sides of the contact part; an extending part extending outwards is arranged on the crossed part; and the extending part is symmetrically distributed at the both sides of the crossed part. The snowflake-shaped LED electrode structure provided by the invention is mainly used for improving expansion of current of a light-emitting diode in a chip, and the extending part which extends outwards on a snowflake-shaped electrode crossed part can better improve the distribution of chip current, so that the luminance uniformity of the light-emitting diode can be improved. Therefore, the distribution of LED current and heat radiation are more uniform.
Description
Technical field
The present invention relates to technical field of semiconductor luminescence, particularly a kind of flakes LED electrode structure.
Background technology
LED (Light Emitting Diode) light-emitting diode is a kind of solid-state semiconductor device, and it can directly be converted into luminous energy to electric energy.The heart of LED is exactly a semi-conductive p-n junction.The operation principle of LED can simply be expressed as: when applying forward voltage, minority carrier injects from the both sides of p-n junction; When near gathering knot is higher than the non equilibrium carrier (
) of equilibrium state concentration, the compound ballistic phonon of charge carrier.For traditional nitride LED, because the poor electric conductivity of its p type nitride, thereby when to its injection current, electric current generally flows to be far longer than along its horizontal direction along its vertical direction and flows.This has just caused electric current after its contact portion flows into, can't be distributed in effectively and uniformly in the p type nitride, and promptly our traditional said LED current expansion is inhomogeneous, and then has caused the LED non-uniform light.In addition, the local accumulation of electric current also can cause the cut-in voltage of chip too high, and it is inhomogeneous to generate heat, and the non-radiation recombination of active layer increases, and then causes internal quantum efficiency to descend.
Therefore, the horizontal homogeneity that how to improve the LED current expansion has just become the crucial direction of research LED.Improving LED current expansion uniformity mainly can be from following three aspect: the first, select the semi-conducting material that is fit to; The second, improve the conductivity of n type GaN layer, thereby reduce the resistance of electric current lateral flow, still along with the raising of n type layer doping content, crystal mass descends, and carrier scattering is serious, and conductivity descends, so this kind method is limited to the improvement of current expansion effect; Three, rational deployment electrode structure, this is effective improved procedure.
In general, the LED electrode can be divided into lateral electrode and vertical electrode, i.e. our general described bipolar electrode and single electrode.Binary (GaAs), ternary (GaAsP), quaternary (AlGaInP) adopt stagged electrode structure with the SiC material, on negative just down because these backing materials can conduct electricity, only need do single electrode in the above.If but make substrate with sapphire (artificial), because of this material non-conductive, so both positive and negative polarity all is made in one side, so be bipolar electrode.The present invention mainly applies in the single electrode.For existing vertical electrode structure technology, tradition thinks that electrode shape is that the I-V performance of led chip of " rice " word shape is best.But we know; LED is difficult to accomplish ideal situation; I.e.
, thus electric current often accumulate near p or the n electrode, for " rice " font; In chip center's part; Because electrode is dense convergence relatively, the electrode crossing angle is smaller, and electric current is also relatively concentrated.Thereby cause the LED CURRENT DISTRIBUTION evenly to cause heating also even inadequately inadequately like this.
Summary of the invention
Goal of the invention of the present invention is the technical deficiency to existing light emitting semiconductor device, provides a kind of LED of making CURRENT DISTRIBUTION the more even and more uniform flakes LED electrode structure of heating.
For realizing the foregoing invention purpose, the technical scheme that the present invention adopts is:
A kind of flakes LED electrode structure is provided, and comprising having: at least one contact portion and at least one cross section, said cross section pass said contact portion and are symmetrically distributed in the both sides of contact portion; Be outward extended with the extension on the said cross section, and said extension is symmetrically distributed in the cross section both sides.
Preferably, said cross section is three, and promptly each intersecting angle is 60 degree, and equal in length, is the geometry of " * ".This kind is shaped as the flakes of standard.
Preferably, said cross section is four, and promptly each intersecting angle is 45 degree, and equal in length.Preferably, said extension is terminal to join with cross section, and the extension is symmetrically distributed in the cross section both sides.Above-mentioned cross section, each cross section length scale is looked die size and length is different; Equally, the terminal geometric space size of each extension optic chiasma part and length or radius are different; The contact portion size is also similar.
Preferably, said extension is linear, semicircle shape or ellipticity.Linear comprises linearity and oblique line shape.This extension is connected its shape of back and is " ten " font, " scholar " font or is the geometry of "
" or the like with cross section.
Preferably, the said cross section homonymy double-deck extension that stretches out, said double-deck extension is terminal to pressing the 1:1:2 five equilibrium with the contact portion contact jaw from it with this top-cross fork part.
Preferably, said contact portion is positioned at chip center place, and contact portion is rounded, rectangle, upright shape, polygon or ellipse.Thereby guarantee that said electrode is symmetrical up and down at chip, be mirror image and distribute.
The present invention is with respect to prior art; Have following beneficial effect: the present invention is mainly used in and improves the expansion of electric current in chip in the Light-Emitting Diode; " snowflake " shape electrode crossing partly goes up outward extending extension can better improve the chip current distribution; Thereby improve the uniformity of the luminosity of light-emitting component, make that the LED CURRENT DISTRIBUTION is more even and heating is more even.
Description of drawings
Fig. 1 is the structural representation of the embodiment of the invention 1;
Fig. 2 is the structural representation of the embodiment of the invention 2;
Fig. 3 is the structural representation of the embodiment of the invention 3.
Embodiment
Below in conjunction with accompanying drawing and specific embodiment goal of the invention of the present invention is done to describe in further detail, embodiment can not give unnecessary details at this one by one, but therefore execution mode of the present invention is not defined in following examples.Unless stated otherwise, the material and the processing method of the present invention's employing are present technique field conventional material and processing method.Promptly be similar to " snowflake " shape electrode pattern, and the concrete size of electrode of the present invention constrained not, in addition, the scope of application of the present invention is constrained not, except that can be used for LED, also can be used for other semiconductor components and devices.
Embodiment 1
As shown in Figure 1, among this embodiment, electrode structure is three cross sections 110 that intersect each other, and the end of each cross section respectively has two pairs of extensions 120, at the cross section infall contact portion 130 is arranged.Each intersecting angle is 60 degree, and the cross section equal in length, is the geometry of " * ".Extension 120 all is positioned at the cross section end; Extension 120 is symmetrically distributed on the cross section; The angle that each extension 120 is connected with cross section 110 is 45 degree, and part is terminal presses the 1:1:2 five equilibrium to contact portion 130 Zi intersecting with cross section 110.Be positioned at the center infall of cross section 110, just the center of chip is the contact portion 130 of electrode.
It must be emphasized that, the length of the extension 120 in the present embodiment with and be connected cross section 110 present positions and be not limited to above-mentioned situation, also can change according to the concrete shape variation of chip.The shape of contact portion 130 also is not limited to circle, also can be rectangle, upright shape, polygon or ellipse or the like.From the above mentioned, all being up and down symmetrically and evenly of light-emitting diode chip for backlight unit distributes, and integral body looks like same " snowflake " shape.
Embodiment 2
As shown in Figure 2, among this embodiment, electrode structure also is three cross sections 210 that intersect each other, and the end of each cross section respectively has two pairs of unequal extensions 220, at the cross section infall contact portion 230 is arranged.Each intersecting angle is 60 degree, and the cross section equal in length, is the geometry of " * ".Extension 220 all is positioned at the cross section end, extension 220 on cross section, each extension 220 be " scholar " font after cross section 210 is connected, and part is terminal presses the 1:1:2 five equilibrium to contact portion 230 Zi intersecting with cross section 210.Be positioned at the center infall of cross section 210, just the center of chip is the contact portion 230 of electrode.
It must be emphasized that, the length of the extension 220 in the present embodiment with and be connected cross section 210 present positions and be not limited to above-mentioned situation, also can change according to the concrete shape variation of chip.The shape of contact portion 230 also is not limited to circle, also can be rectangle, upright shape, polygon or ellipse or the like.From the above mentioned, also all being up and down symmetrically and evenly of this light-emitting diode chip for backlight unit distributes, and integral body looks as another " snowflake " shape.
Embodiment 3
As shown in Figure 3, among this embodiment, electrode structure also is three cross sections 310 that intersect each other, and the end of each cross section respectively has the extension 320 of the equal semicircle of two radiuses, at the cross section infall contact portion 330 is arranged.Each intersecting angle is 60 degree, and the cross section equal in length, is the geometry of " * ".Semicircle extension 320 all is positioned at the cross section end; Semicircle extension 320 is symmetrical in every cross section 310 and distributes; Each extension 320 and the geometry that is "
" after cross section 310 is connected, and with cross section 310 part is terminal presses the 1:1:2 five equilibrium to contact portion 330 Zi intersecting.Be positioned at the center infall of cross section 310, just the center of chip goes out the contact portion 330 for electrode.
It must be emphasized that, the radius length of the extension 320 in the present embodiment with and be connected cross section 310 present positions and be not limited to above-mentioned situation, also can changing according to the concrete change of shape of chip.The shape of contact portion 330 also is not limited to circle, also can be rectangle, upright shape, polygon or ellipse or the like.From the above mentioned, also all being up and down symmetrically and evenly of this light-emitting diode chip for backlight unit distributes, and integral body looks as another " snowflake " shape.
The foregoing description is merely preferred embodiment of the present invention, is not to be used for limiting practical range of the present invention.Be that all equalizations of doing according to content of the present invention change and modification, all contained by claim of the present invention scope required for protection.
Claims (7)
1. flakes LED electrode structure, it is characterized in that: comprising having: at least one contact portion and at least one cross section, said cross section pass said contact portion and are symmetrically distributed in the both sides of contact portion; Be outward extended with the extension on the said cross section, and said extension is symmetrically distributed in the cross section both sides.
2. flakes LED electrode structure according to claim 1 is characterized in that: said cross section is three, and promptly each intersecting angle is 60 degree, and equal in length, is the geometry of " * ".
3. flakes LED electrode structure according to claim 1 is characterized in that: said cross section is four, and promptly each intersecting angle is 45 degree, and equal in length.
4. flakes LED electrode structure according to claim 1 is characterized in that: said extension is terminal to join with cross section, and the extension is symmetrically distributed in the cross section both sides.
5. flakes LED electrode structure according to claim 1, it is characterized in that: said extension is linear, semicircle shape or ellipticity.
6. flakes LED electrode structure according to claim 1 is characterized in that: the said cross section homonymy double-deck extension that stretches out; Said double-deck extension is terminal to pressing the 1:1:2 five equilibrium with the contact portion contact jaw from it with this top-cross fork part.
7. flakes LED electrode structure according to claim 1 is characterized in that: said contact portion is positioned at chip center place, and contact portion is rounded, rectangle, square, polygon or ellipse.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012101707951A CN102800776A (en) | 2012-05-29 | 2012-05-29 | Snowflake-shaped LED (Light-Emitting Diode) electrode structure |
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| Application Number | Priority Date | Filing Date | Title |
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| CN2012101707951A CN102800776A (en) | 2012-05-29 | 2012-05-29 | Snowflake-shaped LED (Light-Emitting Diode) electrode structure |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR3062954A1 (en) * | 2017-02-15 | 2018-08-17 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | IMPROVED ELECTRICAL INJECTION DIODE |
| CN109473527A (en) * | 2018-11-13 | 2019-03-15 | 厦门乾照光电股份有限公司 | The semiconductor chip and current expansion method of light emitting diode |
| CN110459657A (en) * | 2019-07-31 | 2019-11-15 | 华南理工大学 | A kind of micro-dimension LED component and preparation method with cyclic annular class Y type electrode |
| CN112991969A (en) * | 2016-07-11 | 2021-06-18 | 三星显示有限公司 | Pixel structure, display device and method for manufacturing pixel structure |
| CN113097355A (en) * | 2020-01-08 | 2021-07-09 | 安徽三安光电有限公司 | Light emitting diode and manufacturing method thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5309001A (en) * | 1991-11-25 | 1994-05-03 | Sharp Kabushiki Kaisha | Light-emitting diode having a surface electrode of a tree-like form |
| US6614056B1 (en) * | 1999-12-01 | 2003-09-02 | Cree Lighting Company | Scalable led with improved current spreading structures |
| US20080192791A1 (en) * | 2007-02-08 | 2008-08-14 | Kabushiki Kaisha Toshiba | Semiconductor light-emitting element and semiconductor light-emitting device |
| CN101630712A (en) * | 2009-08-07 | 2010-01-20 | 中山大学 | LED electrode structure |
-
2012
- 2012-05-29 CN CN2012101707951A patent/CN102800776A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5309001A (en) * | 1991-11-25 | 1994-05-03 | Sharp Kabushiki Kaisha | Light-emitting diode having a surface electrode of a tree-like form |
| US6614056B1 (en) * | 1999-12-01 | 2003-09-02 | Cree Lighting Company | Scalable led with improved current spreading structures |
| US20080192791A1 (en) * | 2007-02-08 | 2008-08-14 | Kabushiki Kaisha Toshiba | Semiconductor light-emitting element and semiconductor light-emitting device |
| CN101630712A (en) * | 2009-08-07 | 2010-01-20 | 中山大学 | LED electrode structure |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112991969A (en) * | 2016-07-11 | 2021-06-18 | 三星显示有限公司 | Pixel structure, display device and method for manufacturing pixel structure |
| CN112991969B (en) * | 2016-07-11 | 2023-09-12 | 三星显示有限公司 | Pixel structure, display device and method for manufacturing pixel structure |
| FR3062954A1 (en) * | 2017-02-15 | 2018-08-17 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | IMPROVED ELECTRICAL INJECTION DIODE |
| EP3364468A1 (en) * | 2017-02-15 | 2018-08-22 | Commissariat à l'Energie Atomique et aux Energies Alternatives | Diode with improved electrical injection |
| CN109473527A (en) * | 2018-11-13 | 2019-03-15 | 厦门乾照光电股份有限公司 | The semiconductor chip and current expansion method of light emitting diode |
| CN110459657A (en) * | 2019-07-31 | 2019-11-15 | 华南理工大学 | A kind of micro-dimension LED component and preparation method with cyclic annular class Y type electrode |
| CN113097355A (en) * | 2020-01-08 | 2021-07-09 | 安徽三安光电有限公司 | Light emitting diode and manufacturing method thereof |
| CN113097355B (en) * | 2020-01-08 | 2022-08-30 | 安徽三安光电有限公司 | Light emitting diode and manufacturing method thereof |
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Application publication date: 20121128 |