CN113097355B - Light emitting diode and manufacturing method thereof - Google Patents
Light emitting diode and manufacturing method thereof Download PDFInfo
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- CN113097355B CN113097355B CN202010017212.6A CN202010017212A CN113097355B CN 113097355 B CN113097355 B CN 113097355B CN 202010017212 A CN202010017212 A CN 202010017212A CN 113097355 B CN113097355 B CN 113097355B
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- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
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Abstract
The invention belongs to the semiconductor field, in particular to a light emitting diode and a manufacturing method thereof, which at least comprises a substrate, a first conductive type semiconductor layer, a light emitting layer, a second conductive type semiconductor layer, a first electrode and a second electrode, wherein the first electrode and the second electrode are respectively and electrically connected with the first conductive type semiconductor layer and the second conductive type semiconductor layer, the second electrode comprises a pad part and an extension part, and the light emitting diode is characterized in that: an extension portion for extending the current is provided between the end of the extension portion and the first electrode. The extension part can carry out secondary extension on the current injected into the second electrode, and improves the current crowding phenomenon of the current concentration area, thereby improving the antistatic capability of the light-emitting diode and reducing the ESD explosion point generated at the tail end of the extension part.
Description
Technical Field
The invention belongs to the field of semiconductors, and particularly relates to a light emitting diode with an expansion part between a first electrode and a second electrode and a manufacturing method thereof.
Background
The conventional led structure in the prior art includes: the epitaxial layer is arranged on the substrate, the current blocking layer and the transparent conducting layer are arranged on the epitaxial layer, and the P, N electrode is electrically connected with the epitaxial layer. In order to achieve a better spreading of the current to improve the brightness of the product, finger-like extensions are typically introduced on the electrodes to optimize the current spreading. However, if the finger-like extension is designed to be too short, the expected expansion benefit is not achieved, the voltage is increased, and the brightness is insufficient; if the design of the finger-shaped extension part is too long, the current is preferentially expanded from a path with a short distance because the tail end of the extension part is close to the N electrode, so that the current density around the tail end of the extension part and the N electrode is too high, and the antistatic capability is poor.
Disclosure of Invention
Therefore, in order to solve the above-mentioned technical problem, the present invention provides an extension portion for extending current between the extension portion of the second electrode and the first electrode, thereby facilitating current extension and improving antistatic ability.
The first aspect of the present invention discloses a light emitting diode including at least a substrate, a first conductive type semiconductor layer, a light emitting layer, a second conductive type semiconductor layer, and a first electrode and a second electrode electrically connected to the first conductive type semiconductor layer and the second conductive type semiconductor layer, respectively, the second electrode including a pad portion and an extension portion, characterized in that: an extension portion for extending the current is provided between the end of the extension portion and the first electrode.
Wherein the number of the expansion parts is more than 1. When the number of the expansion parts is multiple, the plurality of expansion parts are arranged approximately in parallel along the extending direction of the extension part, and the length of the plurality of expansion parts is gradually increased along the extending direction of the extension part.
Preferably, the expansion part is arc-shaped with the tail end of the extension part as a center. The distance between the expansion part and the tail end of the extension part is basically the same, and the current expansion is facilitated.
Preferably, the distance between the extension part and the tail end of the extension part is smaller than the distance between the extension part and the first electrode.
Preferably, the expansion part is of a single-layer metal structure or a multi-layer metal structure, and the expansion part is made of one or a combination of more of gold, aluminum, rhodium, chromium, aluminum, titanium and platinum.
Preferably, the extension ends have a bulge, and the bulge is in the shape of a solid sphere.
Preferably, in order to further promote the current spreading, a transparent conductive layer is further provided between the second conductive type semiconductor layer and the second electrode, and the spreading portion is located on the surface of the transparent conductive layer. And, in order to improve the current concentration phenomenon under the pad portion, there is a current blocking layer between the second conductive type semiconductor layer and the transparent conductive layer. And the current blocking layer is consistent with the second electrode in shape, and at the moment, a current blocking structure is not arranged below the expansion part.
The second aspect of the present invention provides a method for manufacturing the light emitting diode, which at least includes the following steps:
step 1, providing a substrate, and depositing a first conductive type semiconductor layer, a light emitting layer and a second conductive type semiconductor layer on the surface of the substrate in sequence;
step 2, respectively manufacturing a first electrode electrically connected with the first conductive type semiconductor layer and a second electrode electrically connected with the second conductive type semiconductor layer, wherein the second electrode comprises a pad part and an extension part;
and 3, manufacturing an expansion part for expanding current on the surface of the second conductive type semiconductor layer between the tail end of the extension part and the first electrode.
The method further comprises the step of depositing a transparent conducting layer between the second conductive type semiconductor layer and the second electrode, wherein the expansion part is deposited on the surface of the transparent conducting layer. The method further includes the step of depositing a current blocking layer between the second conductive type semiconductor layer and the transparent conductive layer, the current blocking layer conforming to the shape of the second electrode.
According to the invention, the extension part for extending the current is arranged between the tail end of the extension part of the second electrode and the first electrode, wherein the extension part is not connected with the tail end of the extension part, the current is extended from the pad part to the tail end of the extension part along the extension part to form a current-dense area, and the extension part is used for secondarily extending the current of the current-dense area, so that the current crowding phenomenon of the current-dense area is improved, the antistatic capability of the light-emitting diode is improved, and the ESD explosion point generated at the tail end of the extension part is reduced.
Drawings
Fig. 1 is a schematic top view of a light emitting diode according to a first embodiment of the invention.
Fig. 2 is a schematic cross-sectional structure diagram of a light emitting diode according to a first embodiment of the invention.
Fig. 3 is a schematic top view of a light emitting diode according to a modified embodiment of the present invention.
Detailed Description
The invention is described in detail below with reference to the figures and specific examples. It is to be noted that the drawings of the present invention are provided in a very simplified and non-precise scale for convenience and clarity in order to facilitate the description of the present invention.
Example 1
Referring to fig. 1, the light emitting diode according to the present invention includes at least a substrate 10, a first conductive type semiconductor layer 21, a light emitting layer 22, a second conductive type semiconductor layer 23, and a first electrode 60 and a second electrode 50 electrically connected to the first conductive type semiconductor layer 21 and the second conductive type semiconductor layer 23, respectively, wherein the second electrode 50 includes a pad portion 51 and an extension portion 52, and an extension portion 70 for extending a current is provided between an end of the extension portion 52 and the first electrode 60.
Referring to FIG. 2, the material of the substrate 10 may be selected from Al 2 O 3 Any one or combination of more of SiC, GaAs, GaN, AlN, GaP, Si, ZnO and MnO. In this embodiment, the sapphire substrate 10 (sapphire substrate) is taken as an example, and the lattice direction may be (0001), but the invention is not limited to the material and lattice direction of the substrate 10. The substrate 10 may also be patterned to change the propagation path of light, thereby improving the light extraction efficiency of the light emitting device.
The first conductive type semiconductor layer 21 and the second conductive type semiconductor layer 23 may be each formed by stacking a plurality of III-V group compound semiconductor layers, may have a single layer structure or a multi-layer structure, and may be P-type doped or N-type doped, the P-type doped impurity type may be Mg, Zn, Ca, Sr, or Ba, the N-type doped impurity type may be Si, Ge, or Sn, and the present invention does not exclude equivalent substitution doping of other elements. When the first conductive type semiconductor layer 21 is n-type doped, the second conductive type semiconductor layer 23 is p-type doped; conversely, when the first conductive type semiconductor layer 21 is p-type doped, the second conductive type semiconductor layer 23 is n-type doped.
The method of forming the first conductive type semiconductor layer 21 and the second conductive type semiconductor layer 23 is not particularly limited, and for example, Metal Organic Chemical Vapor Deposition (MOCVD), Molecular Beam Epitaxy (MBE), halide vapor phase epitaxy (HPVE), sputtering, ion plating, electron spray method, and the like. The present invention is fabricated on a substrate 10 using a conventional MOCVD process.
Electrons or holes supplied from the first conductive type semiconductor layer 21 and holes or electrons supplied from the second conductive type semiconductor layer 23 are recombined in the light emitting layer 22, and the light emitting layer 22 emits light when driven by a voltage. The color of the light depends on the material of the compound semiconductor layer of the light-emitting layer 22. In the present invention, the first conductive type semiconductor layer 21, the light emitting layer 22 and the second conductive type semiconductor layer 23 may be all gallium nitride system III-V group compound semiconductors such as GaN, GaAlN, InGaN, InAlGaN, etc., which may be represented by the formula InxAlyGa1-X-yN, where X is 0. ltoreq. X.ltoreq.Y is 0. ltoreq. Y.ltoreq.1, and X + Y. ltoreq.1. The light-emitting layer 22 is made of a material capable of providing optical radiation, and has a specific radiation wavelength band of 390-950 nm, such as blue, green, red, yellow, orange, and infrared light, and the light-emitting layer 22 may have a single quantum well or multiple quantum well structure.
The second conductive type semiconductor layer 23 is etched to the first conductive type semiconductor layer 21 to expose a portion of the surface of the first conductive type semiconductor layer 21, and the first electrode 60 is formed on the exposed surface of the first conductive type semiconductor layer 21, wherein the first electrode 60 is in direct contact with the first conductive type semiconductor layer 21 for conduction.
The second electrode 50 is disposed on the surface of the second conductive type semiconductor layer 23 and electrically contacts the second conductive type semiconductor layer. The second electrode 50 may be directly in contact with the surface of the second conductive type semiconductor layer 23 to electrically connect the second conductive type semiconductor layer and the second conductive type semiconductor layer, or may be indirectly electrically connected to the surface of the second conductive type semiconductor layer 23 through another conductive medium layer. For example, the transparent conductive layer 40 may be deposited on the surface of the second conductive type semiconductor layer 23 to promote the current spreading. The transparent conductive layer 40 is an indium tin oxide layer, and in other embodiments, may be one or a combination of several of a zinc oxide layer, a zinc indium tin oxide layer, an indium zinc oxide layer, a zinc tin oxide layer, a gallium indium oxide layer, a gallium zinc oxide layer, an aluminum-doped zinc oxide layer, and a fluorine-doped tin oxide layer. The transparent conductive layer 40 may have an opening 41 at a position corresponding to the second electrode 50, and the lower end of the pad part 51 is inserted into the opening 41 to enhance the firmness of the second electrode 50.
As shown in fig. 1 and 2, the second electrode 50 includes a pad portion 51 and an extension portion 52, and the extension portion 52 extends from the pad portion 51 along the surface of the transparent conductive layer 40 toward the first electrode 60, so that the current of the pad portion 51 is expanded along the extension portion 52. However, since the distance between the end of the extension portion 52 and the first electrode 60 is short and the current tends to flow in the shortest path, the current density at the end of the extension portion 52 is high, a current collection region is formed, and an ESD explosion point is easily formed at the end of the extension portion 52.
Therefore, in order to improve the current collecting effect at the end of the extension portion 52 and promote the current spreading, the present invention provides the extension portion 70 on the surface of the transparent conductive layer 40 between the end of the extension portion 52 and the first electrode 60, and the extension portion 70 secondarily spreads the current at the end of the extension portion 52 to improve the current collecting effect.
The extension 70 is not connected to the end of the extension 52 with a distance therebetween, and the extension 70 is located at a distance from the end of the extension 52 that is less than the distance from the first electrode 60, i.e., the extension 70 is closer to the end of the extension 52, so as to spread the current a second time.
As shown in fig. 1, it is verified by experiments that when the extension portion 70 is in an arc shape with the end of the extension portion 52 as a center, the distance between the extension portion 70 and the end of the extension portion 52 is substantially the same, and at this time, the secondary extension effect on the current is better.
The extension portion 70 has a single-layer metal structure or a multi-layer metal structure, and is made of one or a combination of several materials selected from gold, aluminum, rhodium, chromium, aluminum, titanium, and platinum. For example, the extension 70 may be a single layer metal structure of gold, aluminum, rhodium, or a multilayer stack of chromium/aluminum/titanium/platinum/gold.
The number of the expanded portions 70 may be 1 or more, that is, 1 expanded portion 70 (as shown in fig. 1) may be provided, and in other modified embodiments, a plurality of expanded portions 70 may be provided, for example, preferably 3 expanded portions 70 (as shown in fig. 3). And the plurality of expanded portions 70 are arranged substantially in parallel along the direction in which the extended portions 52 extend, and the lengths thereof gradually increase. Both ends of the expanded portion 70 may be designed to be enlarged.
In this embodiment, the current blocking layer 30 is deposited between the second conductive type semiconductor layer 23 and the transparent conductive layer 40, so that the current collecting effect under the pad portion 51 of the second electrode 50 can be further improved, and the current spreading of the pad portion 51 can be promoted. The current blocking layer 30 has a shape conforming to that of the second electrode 50, and includes, for example, a body portion 31 under the pad portion 51 and a branch portion 32 under the extension portion 52.
And, the current barrier part can be set up below the extension 70, also can not set up, and, through the verification of the actual experiment, the current barrier part is not set up below the extension 70, and it is better to improve the effect of ESD explosion point. The material of the current blocking layer 30 may be one or a combination of several of alumina, silicon dioxide, silicon nitride, silicon carbide, and the like. In this embodiment, silica is preferred.
In this embodiment, the end of the extension portion 52 may be expanded, and the expanded portion may be a solid sphere, so that the extension portion 52 has a better current expansion effect.
According to the invention, the extension part 70 for current extension is arranged between the tail end of the extension part 52 of the second electrode 50 and the first electrode 60, wherein the extension part 70 is not connected with the tail end of the extension part 52, the current is extended from the pad part 51 to the tail end of the extension part 52 along the extension part 52 to form a current-dense area, and the extension part 70 carries out secondary extension on the current of the current-dense area, so that the current-dense phenomenon of the current-dense area is improved, the antistatic capability of the light-emitting diode is improved, and the ESD explosion point generated at the tail end of the extension part 52 is reduced.
Example 2
In order to fabricate the light emitting diode, the embodiment provides a fabrication method, which includes the following steps:
step 1, providing a substrate 10, and sequentially depositing a first conductive type semiconductor layer 21, a light emitting layer 22 and a second conductive type semiconductor layer 23 on the surface of the substrate 10;
step 2, respectively fabricating a first electrode 60 electrically connected to the first conductive type semiconductor layer 21 and a second electrode 50 electrically connected to the second conductive type semiconductor layer 23, wherein the second electrode 50 includes a pad portion 51 and an extension portion 52;
step 3, forming an extension 70 for extending the current on the surface of the second conductive type semiconductor layer 23 between the end of the extension 52 and the first electrode 60.
In this embodiment, a step of depositing a transparent conductive layer 40 on the surface of the second conductive type semiconductor layer 23 and a step of depositing a current blocking layer 30 between the second conductive type semiconductor layer 23 and the transparent conductive layer 40 are further included between the above steps 1 and 2.
The deposition method of the first conductive type semiconductor layer 21, the light emitting layer 22 and the second conductive type semiconductor layer 23 may be preferably an MOCVD method, and before the first conductive type semiconductor layer 21 is deposited, a pre-cleaning process may be performed on the substrate 10, and then a buffer layer may be deposited and grown, and the buffer layer may improve the crystal quality of the first conductive type semiconductor layer 21 which is subsequently grown.
The first electrode 60 and the second electrode 50 may be formed simultaneously by vacuum deposition, the first electrode 60 and the second electrode 50 may be formed by multi-layer metal deposition, the metal layer directly contacting the second conductive semiconductor layer 23 may be formed by metal deposition with good adhesion, and the outermost layer may be formed by gold with the highest conductivity.
The transparent conductive layer 40 and the current blocking layer 30 may be provided with openings so that the pad portions 51 of the second electrode 50 are in contact with the second conductive type semiconductor layer 23 through the openings, enhancing the firmness of the pad portions 51. The extension 70 may be formed by vapor deposition at the same time as the second electrode 50 and the second electrode 50, or may be formed by vapor deposition after the first electrode 60 and the second electrode 50 are formed.
It should be understood that the above-mentioned embodiments are preferred examples of the present invention, and the scope of the present invention is not limited to these examples, and any modification made according to the present invention is within the scope of the present invention.
Claims (12)
1. A light emitting diode including at least a substrate, a first conductive type semiconductor layer, a light emitting layer, a second conductive type semiconductor layer, and a first electrode and a second electrode electrically connected to the first conductive type semiconductor layer and the second conductive type semiconductor layer, respectively, the second electrode including a pad portion and an extension portion, characterized in that: the extension part is used for extending current and is arranged between the tail end of the extension part and the first electrode, the extension part is not connected with the tail end of the extension part, the extension part is in an arc shape with the tail end of the extension part as a circle center, the distance between the extension part and the tail end of the extension part is smaller than that between the extension part and the first electrode, a transparent conducting layer is further arranged between the second conducting type semiconductor layer and the second electrode, and the extension part are located on the surface of the transparent conducting layer.
2. The led of claim 1, wherein: the number of the expansion parts is more than 1.
3. The led of claim 2, wherein: the plurality of expansion parts are arranged approximately in parallel along the extending direction of the extension part.
4. The light-emitting diode according to claim 3, wherein: the length of the plurality of expansion parts is gradually increased along the extending direction of the extension part.
5. The led of claim 1, wherein: the expansion part is of a single-layer metal structure or a multi-layer metal structure.
6. The led of claim 1, wherein: the material of the expansion part is selected from one or a combination of several of gold, aluminum, rhodium, chromium, titanium and platinum.
7. The led of claim 1, wherein: the extension ends have a flared portion.
8. The led of claim 7, wherein: the enlarged portion is in the shape of a solid sphere.
9. The led of claim 1, wherein: and a current blocking layer is arranged between the second conductive type semiconductor layer and the transparent conductive layer.
10. The led of claim 9, wherein: the current blocking layer conforms to the shape of the second electrode.
11. The manufacturing method of the light-emitting diode at least comprises the following steps:
step 1, providing a substrate, and depositing a first conductive type semiconductor layer, a light emitting layer and a second conductive type semiconductor layer on the surface of the substrate in sequence;
step 2, respectively manufacturing a first electrode electrically connected with the first conductive type semiconductor layer and a second electrode electrically connected with the second conductive type semiconductor layer, wherein the second electrode comprises a pad part and an extension part;
step 3, an extension part for current extension is manufactured on the surface of the second conductive type semiconductor layer between the tail end of the extension part and the first electrode, the extension part is not connected with the tail end of the extension part, the extension part is in an arc shape with the tail end of the extension part as a circle center, and the distance between the extension part and the tail end of the extension part is smaller than the distance between the extension part and the first electrode;
and depositing a transparent conducting layer between the second conductive type semiconductor layer and the second electrode, wherein the extension part and the extension part are deposited on the surface of the transparent conducting layer.
12. The method of claim 11, wherein: the method further includes the step of depositing a current blocking layer between the second conductive type semiconductor layer and the transparent conductive layer, the current blocking layer conforming to the shape of the second electrode.
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| CN202010017212.6A CN113097355B (en) | 2020-01-08 | 2020-01-08 | Light emitting diode and manufacturing method thereof |
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| CN202010017212.6A CN113097355B (en) | 2020-01-08 | 2020-01-08 | Light emitting diode and manufacturing method thereof |
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| CN113097355A CN113097355A (en) | 2021-07-09 |
| CN113097355B true CN113097355B (en) | 2022-08-30 |
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| CN113659052B (en) * | 2021-08-16 | 2023-08-01 | 泉州三安半导体科技有限公司 | Light emitting diode, light emitting module and display device |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1870307A (en) * | 2005-05-26 | 2006-11-29 | 大连路美芯片科技有限公司 | Gallium nitride base high brightness high power blue green LED chip |
| CN101478021A (en) * | 2007-12-31 | 2009-07-08 | 艾比维利股份有限公司 | III-nitride semiconductor light emitting device |
| KR20100012003A (en) * | 2010-01-18 | 2010-02-03 | 주식회사 에피밸리 | Iii-nitride semiconductor light emitting device |
| KR20120079330A (en) * | 2011-01-04 | 2012-07-12 | 갤럭시아포토닉스 주식회사 | Light emitting diode having current blocking holes and light emitting diode package |
| CN102800776A (en) * | 2012-05-29 | 2012-11-28 | 中山大学 | Snowflake-shaped LED (Light-Emitting Diode) electrode structure |
| CN103700744A (en) * | 2013-12-23 | 2014-04-02 | 安徽三安光电有限公司 | Light-emitting device |
| CN106663722A (en) * | 2014-07-01 | 2017-05-10 | 首尔伟傲世有限公司 | Light emitting element |
| CN110364602A (en) * | 2019-06-21 | 2019-10-22 | 华灿光电(苏州）有限公司 | Chip of light emitting diode and preparation method thereof |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011083923A2 (en) * | 2010-01-07 | 2011-07-14 | Seoul Opto Device Co., Ltd. | Light emitting diode having electrode pads |
-
2020
- 2020-01-08 CN CN202010017212.6A patent/CN113097355B/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1870307A (en) * | 2005-05-26 | 2006-11-29 | 大连路美芯片科技有限公司 | Gallium nitride base high brightness high power blue green LED chip |
| CN101478021A (en) * | 2007-12-31 | 2009-07-08 | 艾比维利股份有限公司 | III-nitride semiconductor light emitting device |
| KR20100012003A (en) * | 2010-01-18 | 2010-02-03 | 주식회사 에피밸리 | Iii-nitride semiconductor light emitting device |
| KR20120079330A (en) * | 2011-01-04 | 2012-07-12 | 갤럭시아포토닉스 주식회사 | Light emitting diode having current blocking holes and light emitting diode package |
| CN102800776A (en) * | 2012-05-29 | 2012-11-28 | 中山大学 | Snowflake-shaped LED (Light-Emitting Diode) electrode structure |
| CN103700744A (en) * | 2013-12-23 | 2014-04-02 | 安徽三安光电有限公司 | Light-emitting device |
| CN106663722A (en) * | 2014-07-01 | 2017-05-10 | 首尔伟傲世有限公司 | Light emitting element |
| CN110364602A (en) * | 2019-06-21 | 2019-10-22 | 华灿光电(苏州）有限公司 | Chip of light emitting diode and preparation method thereof |
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