CN1870307A - Gallium nitride base high brightness high power blue green LED chip - Google Patents
Gallium nitride base high brightness high power blue green LED chip Download PDFInfo
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- CN1870307A CN1870307A CNA2005100715927A CN200510071592A CN1870307A CN 1870307 A CN1870307 A CN 1870307A CN A2005100715927 A CNA2005100715927 A CN A2005100715927A CN 200510071592 A CN200510071592 A CN 200510071592A CN 1870307 A CN1870307 A CN 1870307A
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- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 67
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 62
- 239000000758 substrate Substances 0.000 claims abstract description 11
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 6
- 239000010980 sapphire Substances 0.000 claims abstract description 6
- 238000002161 passivation Methods 0.000 claims description 10
- 238000000576 coating method Methods 0.000 claims description 6
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 5
- 229910052733 gallium Inorganic materials 0.000 claims description 5
- 238000007789 sealing Methods 0.000 claims description 5
- 239000011248 coating agent Substances 0.000 claims description 4
- IWBUYGUPYWKAMK-UHFFFAOYSA-N [AlH3].[N] Chemical compound [AlH3].[N] IWBUYGUPYWKAMK-UHFFFAOYSA-N 0.000 claims description 3
- 238000000034 method Methods 0.000 abstract description 11
- 238000001704 evaporation Methods 0.000 abstract description 7
- 238000001259 photo etching Methods 0.000 abstract description 4
- 229910052757 nitrogen Inorganic materials 0.000 abstract description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 6
- 230000008020 evaporation Effects 0.000 description 6
- 239000010931 gold Substances 0.000 description 6
- 239000010936 titanium Substances 0.000 description 6
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 5
- 229910052804 chromium Inorganic materials 0.000 description 5
- 239000011651 chromium Substances 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 238000009826 distribution Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- YBXMTNGWQWZJHK-UHFFFAOYSA-N [Au].[Ni]=O Chemical compound [Au].[Ni]=O YBXMTNGWQWZJHK-UHFFFAOYSA-N 0.000 description 2
- HZEWFHLRYVTOIW-UHFFFAOYSA-N [Ti].[Ni] Chemical compound [Ti].[Ni] HZEWFHLRYVTOIW-UHFFFAOYSA-N 0.000 description 2
- -1 aluminium gold Chemical compound 0.000 description 2
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- NXAHEPNDOUOACA-UHFFFAOYSA-N chromium gallium Chemical compound [Cr].[Ga] NXAHEPNDOUOACA-UHFFFAOYSA-N 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000004134 energy conservation Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
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Abstract
A blue/ green LED chip of gallium nitride base in high brightness and high voltage type is prepared as utilizing sapphire as substrate and growing multiple layer of GaInN / AIGaN / GaN quantum well structure, covering transparent conductive layer and P and N electrode on stage by utilizing electronic beam evaporation method, applying a photo etching technique to prepare a special horizontal structure of P electrode and N electrode.
Description
Technical field
The present invention relates to a kind of high brightness high power blue green LED chip, particularly do the gallium nitride base high brightness high power blue green LED chip of substrate with sapphire.
Background technology
GaN bluish-green emitting led be a kind of the electric energy high efficiency to be converted into luminous energy (frequency spectrum: 510-530nm, luminescent device 460-470nm), red at present, orange, yellow emitting led manufacturing technology is ripe, the third generation semi-conducting material that with GaN is representative can send bluish-green coloured light, has remedied the blank of color; With GaN is advantage outstanding reveal of the blue green LED of representative in this application of semiconductor lighting, and becomes the research focus in this field.
Blue light-emitting diode has that volume is little, cold light source, response fast, high power, long-life, economize on electricity, many advantages such as energy-conservation.But light-emitting diode is if will obtain high brightness, must make the electric current good dispersion, existing product causes current concentration because of smaller volume, strengthened contact resistance, cause that heat is too high, performance is stable inadequately, the life-span is short relatively, productivity ratio and output can't promote, and have strengthened defectives such as production cost of products.
Chinese patent ZL001313223 (" manufacture method of blue LED chip based on gallium nitride ") has carried out comprehensive transformation to manufacture method, but thoroughly the deficiency of the said goods can't really realize small size, high brightness, high-power blue green LED chip.
Other does not see the elaboration of similar techniques yet in first to file.
Summary of the invention
The gallium nitride base high brightness high power blue green LED chip that the present invention relates to, by to the adjustment of the vertical structure of existing procucts and the improvement of transversary, the particularly laterally invention of domain structure, make light-emitting diode chip for backlight unit the electric current diffusion evenly, there is not the current concentration phenomenon to take place, reduce contact resistance greatly, increase the reliability of device, the life-span obviously improves, the brightness height, power is big, and good reliability improves luminous efficiency.
Gallium nitride base high brightness high power blue green LED chip of the present invention is to do substrate (101) with sapphire, this substrate has upper surface and lower surface, the surface is gone up and is adopted the MOCVD method to grow a series of gallium nitride structure, the multilayer of promptly growing GaInN/AlGaN/GaN quantum well structure thereon; Utilize electron beam evaporation methods that transparency conducting layer and P, N electrode are covered on the step again.Gallium nitride structure vertically is followed successively by gallium nitride resilient coating (102), gallium nitride substrate substitutable layer (103), n type gallium nitride layer (104), active layer (106), aluminum gallium nitride (AlGaN) layer (107), P type gallium nitride layer (108), heavy doping P from the bottom to top
+Type gallium nitride (109), transparent electrode layer (110), passivation layer (111).With the photoetching process etching surface and form the P electrode window through ray, at this window evaporation P electrode, etch step at passivation layer and transparent electrode layer around the P electrode, shoulder height is lower than the height of active layer (106).Evaporation N electrode layer (105) on the n type gallium nitride layer, n type gallium nitride layer (104) are the gallium nitride layers that silicon (Si) mixes; Active layer (106) is gallium indium nitrogen (GaInN) layer and the gallium nitride alternating layer that silicon (Si) mixes; Aluminum gallium nitride (AlGaN) layer (107) is chromium (Mg) doped p type aluminum gallium nitride (AlGaN) layer, and P type gallium nitride layer (108) is a chromium doped P-type gallium nitride layer, heavy doping P
+Type gallium nitride (109) is the heavily doped P of chromium
+Layer gallium nitride layer, transparent electrode layer (110) are nickel oxide gold (NiO/Au) layers, and passivation layer (111) is silicon dioxide (SiO2), and the material of P electrode layer (112) is titanium (Ti/Au), and the material of N electrode (105) is a titanium nickel aluminium gold (Ti/Ni/Al/Au).
Gallium nitride base high brightness high power blue green LED chip of the present invention utilizes photoetching technique to produce special transversary:
The transversary of P electrode is the combination (201) of T type and circular institute area coverage, and wherein round diameter is between 80um-130um, and the width of T type bar is 10um-30um.Two arm lengths of T shape equate that brachium is 200um-500um, the long 100um-300um of the vertical line of T shape.
The transparent electrode layer transverse shapes is that rectangle deducts one 3/4 fillet (202), and rectangle is long between the 340um-740um, and wide is between the 340um-740um.The diameter in 3/4 garden is about 80-130um.
N electrode transverse shapes adds one 3/4 round area occupied again for sealing straight-flanked ring bar area occupied, and the ring bar is wide to be between the 10um-30um.3/4 diameter of a circle is about 80-130um; Wherein the area sum of the horizontal area occupied of N electrode and its encirclement forms a rectangle, and between the long 450um-750um of this rectangle, rectangle is wide to be between the 450um-750um.
Wherein the position in the P electrode transverse shapes center of circle will coexist with the position of the 3/4 round heart in the N utmost point electrode transversary on the rectangle diagonal, and occupies an angle separately, and the maximum distance between P electrode and the N electrode is not more than 250um.
Wherein the distance of center circle of the circle of 3/4 in the interface point of the horizontal line of the T shape in the P electrode transverse shapes and vertical line and the N utmost point electrode transversary is from being 180um-420um.
Wherein the vertical line of the T shape in the P electrode transverse shapes will be on the line in the center of circle of P electrode and N utmost point electrode 3/4 center of circle.
The invention provides that a kind of this structure is improved the CURRENT DISTRIBUTION of LED around shape N electrode structure, improve reliability, the distribution of P electrode and it are very important with the distribution relation of N electrode, and this is an assurance LED high power, the key of high brightness.
Description of drawings
Fig. 1 is the vertical structure of gallium nitride base high brightness high power blue green LED chip, wherein
101 Sapphire Substrate
102 gallium nitride resilient coatings
103 gallium nitride substrate substitutable layers
104 n type gallium nitride layers
105 N electrode layers
106 active layers
107 gallium aluminium nitrogen layers
108 P type gallium nitride layers
109 heavy doping P
+The type gallium nitride
110 transparent electrode layers
111 passivation layers
112 P electrode layers
Fig. 2 is the transversary of gallium nitride base high brightness high power blue green LED chip, wherein
201 P electrodes
202 transparency electrodes
203 N electrodes
Embodiment
Embodiment 1:
With reference to accompanying drawing 1, the structure of accompanying drawing 2, embodiments of the present invention are:
The vertical structure of gallium nitride series blue green light LED among the present invention:
Adopt the method for MOCVD to grow gallium nitride resilient coating (102) successively at Sapphire Substrate (101) upper surface, it on resilient coating gallium nitride substrate substitutable layer (103), on substitutable layer n type gallium nitride layer (104), it on the n type gallium nitride layer active layer (106), it on active layer aluminum gallium nitride (AlGaN) layer (107), being P type gallium nitride layer (108) on the gallium aluminium nitrogen layer, is heavy doping P on P type gallium nitride layer (108)
+Type gallium nitride (109).At heavy doping P
+Being transparent electrode layer (110) above the type gallium nitride, is passivation layer (111) on transparent electrode layer; Use up method etching surface and form the P electrode window through ray at quarter layer by layer in passivation layer and transparency electrode.At this window evaporation P electrode.Etch step around the P electrode, what be dry-etched in the P electrode etches step on every side, and shoulder height is lower than the height of active layer (106), evaporation N electrode layer (105) on step; N type gallium nitride layer (104) is the gallium nitride layer that silicon (Si) mixes, active layer (106) is gallium indium nitrogen (GaInN) layer and the gallium nitride alternating layer that silicon (Si) mixes, aluminum gallium nitride (AlGaN) layer (107) is chromium (Mg) doped p type aluminum gallium nitride (AlGaN) layer, P type gallium nitride layer (108) is a chromium doped P-type gallium nitride layer, heavy doping P
+Type gallium nitride (109) is the heavily doped P+ layer of a chromium gallium nitride layer, adopts evaporation coating method at heavy doping P
+Covering transparent electrode layer (110) and passivation layer (111) above the type gallium nitride;
Transparent electrode layer (110) is nickel oxide gold (NiO/Au) layer, and passivation layer (111) is silicon dioxide (SiO2), and P electrode layer (112) is titanium (Ti/Au), and the material of N electrode (105) is a titanium nickel aluminium gold (Ti/Ni/Al/Au).
With photoetching process etching transparent electrode layer (110) and passivation layer (111) and form the P electrode window through ray.At this window evaporation P electrode;
The transversary of gallium nitride series blue green light LED:
The transversary of P electrode is the combination (201) of T type and circular institute area coverage, round diameter 110um, and two arm lengths of the width 15um.T shape of T type bar equate that brachium is 290um, the long 140um of the vertical line of T shape;
The transparent electrode layer transverse shapes is that rectangle deducts one 3/4 fillet (202), and rectangle is long to be 400um, and rectangle is wide to be 400um; The diameter in 3/4 garden is 110um;
N electrode transverse shapes adds one 3/4 round area occupied again for sealing straight-flanked ring bar area occupied, and the ring bar is wide to be 15um.The diameter in 3/4 garden is about 110um; Wherein the area sum of the horizontal area occupied of N electrode and its encirclement forms a rectangle, the long 480um of this rectangle, and rectangle is wide to be 480um.
Wherein the home position of P electrode transverse shapes will coexist with the position of garden, the 3/4 garden heart in the N utmost point electrode transversary on the rectangle diagonal, and occupies an angle separately.Maximum distance between P electrode and the N electrode is not more than 250um.
Wherein the distance of center circle in 3/4 garden in the interface point of the horizontal line of the T shape in the P electrode transverse shapes and vertical line and the N utmost point electrode transversary is from being about 240um.
Wherein the vertical line of the T shape in the P electrode transverse shapes will be on the line of the center of circle of P electrode and the N utmost point electrode 3/4 garden heart.
Claims (7)
1, gallium nitride base high brightness high power blue green LED chip is followed successively by Sapphire Substrate (101), gallium nitride resilient coating (102), gallium nitride substrate substitutable layer (103), n type gallium nitride layer (104), N electrode layer (105), active layer (106), gallium aluminium nitrogen layer (107), P type gallium nitride layer (108), heavy doping P from the bottom to top
+Type gallium nitride (109), transparent electrode layer (110), passivation layer (111), P electrode layer (112);
The transversary that it is characterized in that light-emitting diode chip for backlight unit is: the transverse shapes of P electrode is the combination (201) of T type and circular institute area coverage; The transverse shapes of transparent electrode layer is that rectangle deducts one 3/4 fillet (202); N electrode transverse shapes adds one 3/4 round area occupied again for sealing straight-flanked ring bar area occupied.
2, gallium nitride base high brightness high power blue green LED chip according to claim 1, it is characterized in that the round diameter in the described P electrode transverse shapes is 80 μ m～130 μ m, T type bar width is 10 μ m～30 μ m, and two arm lengths equate, brachium is 200 μ m～500 μ m, and the vertical line length of T type is 100 μ m～300 μ m.
3, gallium nitride base high brightness high power blue green LED chip according to claim 1, it is characterized in that the rectangle length in the described transparent electrode layer shape is 340 μ m～740 μ m, wide is 340 μ m～740 μ m, and 3/4 diameter of a circle is 80 μ m～130 μ m.
4, gallium nitride base high brightness high power blue green LED chip according to claim 1, it is characterized in that sealing the straight-flanked ring bar wide in the described N electrode transverse shapes is 10 μ m～30 μ m, 3/4 diameter of a circle is 80～130 μ m, this sealing rectangle length is 450 μ m～750 μ m, and wide is 450 μ m～750 μ m.
5, gallium nitride base high brightness high power blue green LED chip according to claim 1, the position that it is characterized in that the position in the described P electrode transverse shapes center of circle and the 3/4 round heart in the N electrode transverse shapes coexists on the rectangle diagonal, and occupy an angle separately, the distance of P electrode and N electrode is not more than 250 μ m.
6, gallium nitride base high brightness high power blue green LED chip according to claim 1, the distance of center circle that it is characterized in that the interface point of the horizontal line of the T shape in the described P electrode transverse shapes and vertical line and 3/4 circle in the N electrode transversary is from being 180 μ m～420 μ m.
7, gallium nitride base high brightness high power blue green LED chip according to claim 1, the vertical line that it is characterized in that the T shape in the described P electrode transverse shapes is on the line in the center of circle of P electrode and N electrode 3/4 center of circle.
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| CN2005100715927A CN100407457C (en) | 2005-05-26 | 2005-05-26 | Gallium nitride base high brightness high power blue green LED chip |
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| CN100407457C CN100407457C (en) | 2008-07-30 |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2009111911A1 (en) * | 2008-03-13 | 2009-09-17 | 鹤山丽得电子实业有限公司 | A led and the manufacturing method of led |
| CN101222015B (en) * | 2008-01-19 | 2010-05-12 | 鹤山丽得电子实业有限公司 | Light emitting diode, packaging structure with the same and its manufacturing method |
| CN101800273B (en) * | 2009-02-11 | 2011-06-01 | 立景光电股份有限公司 | Method for forming transversely distributed light emitting diodes |
| CN101286541B (en) * | 2007-04-09 | 2012-04-11 | 晶元光电股份有限公司 | Semi-conductor illuminating device having fold transparent electrode |
| CN101944558B (en) * | 2009-07-09 | 2012-05-02 | 晶发光电股份有限公司 | Light-emitting diode with passivation layer and preparation method thereof |
| CN102456791A (en) * | 2010-10-20 | 2012-05-16 | 夏普株式会社 | Nitride semiconductor light-emitting device |
| CN113097355A (en) * | 2020-01-08 | 2021-07-09 | 安徽三安光电有限公司 | Light emitting diode and manufacturing method thereof |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3787207B2 (en) * | 1997-01-24 | 2006-06-21 | ローム株式会社 | Semiconductor light emitting device |
| WO2001073858A1 (en) * | 2000-03-31 | 2001-10-04 | Toyoda Gosei Co., Ltd. | Group-iii nitride compound semiconductor device |
| CN100383987C (en) * | 2003-09-10 | 2008-04-23 | 深圳市方大国科光电技术有限公司 | Method for manufacturing sapphire substrate LED chip electrode |
-
2005
- 2005-05-26 CN CN2005100715927A patent/CN100407457C/en not_active Expired - Fee Related
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101286541B (en) * | 2007-04-09 | 2012-04-11 | 晶元光电股份有限公司 | Semi-conductor illuminating device having fold transparent electrode |
| CN101222015B (en) * | 2008-01-19 | 2010-05-12 | 鹤山丽得电子实业有限公司 | Light emitting diode, packaging structure with the same and its manufacturing method |
| WO2009111911A1 (en) * | 2008-03-13 | 2009-09-17 | 鹤山丽得电子实业有限公司 | A led and the manufacturing method of led |
| CN101800273B (en) * | 2009-02-11 | 2011-06-01 | 立景光电股份有限公司 | Method for forming transversely distributed light emitting diodes |
| CN101944558B (en) * | 2009-07-09 | 2012-05-02 | 晶发光电股份有限公司 | Light-emitting diode with passivation layer and preparation method thereof |
| CN102456791A (en) * | 2010-10-20 | 2012-05-16 | 夏普株式会社 | Nitride semiconductor light-emitting device |
| CN102456791B (en) * | 2010-10-20 | 2015-07-08 | 夏普株式会社 | Nitride semiconductor light-emitting device |
| CN113097355A (en) * | 2020-01-08 | 2021-07-09 | 安徽三安光电有限公司 | Light emitting diode and manufacturing method thereof |
| CN113097355B (en) * | 2020-01-08 | 2022-08-30 | 安徽三安光电有限公司 | Light emitting diode and manufacturing method thereof |
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| CN100407457C (en) | 2008-07-30 |
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