CN101257081A - Dual wavelength single chip LED - Google Patents
Dual wavelength single chip LED Download PDFInfo
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- CN101257081A CN101257081A CNA2008101033365A CN200810103336A CN101257081A CN 101257081 A CN101257081 A CN 101257081A CN A2008101033365 A CNA2008101033365 A CN A2008101033365A CN 200810103336 A CN200810103336 A CN 200810103336A CN 101257081 A CN101257081 A CN 101257081A
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Abstract
The invention discloses a dual-wavelength single-chip LED which belongs to semiconductor lighting field and metal organic chemical vapor deposition (MOCVD) technique field. The device includes some n-type contact layers, two active layers and some p-type contact layers. The n-type contact layer, active layer and p-type contact layer are mutual superposition structure, the two active layers are quantum well with various optical band, and the active layers share a p-type contact layer or a n-type contact layer. The LED device can control two quantum wells with various optical band by controlling current, voltage added by various electrode, and has characteristics of simple circuit, long service time, high photoelectric conversion efficiency etc. The LED has important significance in manufacturing single chip white light LED without phosphor and with high photoelectric conversion efficiency, and plays an important role in white lighting, full color display and light adjustment fields.
Description
Technical field
The invention relates to GaN based Single chip white light emitting diode (LED) device in field of semiconductor illumination and metal organic chemical vapor deposition (MOCVD) technical field, be specifically related to a kind of dual wavelength single chip LED structure.
Background technology
The III group nitride material is important semiconductor material with wide forbidden band, has bandgap range wide (0.9eV-6.2eV), the breakdown electric field height, the thermal conductivity height, the electron saturation velocities height, characteristics such as the strong and resistance to chemical attack of capability of resistance to radiation, the light that these are good, electrical properties and excellent material chemical property make the III group nitride material in indigo plant, green, purple, ultraviolet light and white light emitting diode (LED), short wavelength laser diode (LD), have wide practical use in the fields such as semiconductor device under opto-electronic device such as ultraviolet light detector and power electronic device and electronic device and the specific condition, attracted people's keen interest.
At present, one of main application of GaN base luminescent device product domestic and even main flow in the world is that the basic blue light, green glow and the InGaAsP base red-light LED that adopt GaN constitute the complete luminescence system of three primary colors, the its preparation method requirement is packaged together the LED of these three kinds of colors according to a certain percentage and obtains being used for the white light of lighting use. and a kind of simple relatively method is to make blue, the green glow dual wavelength LED of GaN base, then with the red-light LED bonding.This just makes the important topic that is grown to serve as of dual wavelength LED.The method of growth dual wavelength LED mainly is at present: n type layer+blue light active area+p type layer+tunnel junction+n type layer+green glow active area+p type layer, as Chinese patent 03157152.2 employing is exactly this method.But the growth technique process of this method is comparatively complicated, and owing in esse p-n junction in two active layers, influenced transporting of charge carrier, cause the active area luminous efficiency on the low side, and the preparation of tunnel junction itself is exactly the part difficult matter, equally also useful tunnel junction prepares the report of two waveband LED: I.Ozden, a) E.Makarona, and A.V.Nurmikkob) Appl Phy Lett 79,2532 (2001), also just like Y.D.Qi, H.Liang, W.Tang, et.al, Journal of Crystal Growth272,333-340, the Multiple Quantum Well of mentioning on 2004 documents of utilizing obtains two waveband LED simultaneously, but problem be it two waveband intensity be that size with electric current changes, reduced its practical value greatly.
Summary of the invention
The present invention has overcome deficiency of the prior art, and a kind of dual wavelength single chip LED that is total to the p type or is total to the n type is provided.
Technical scheme of the present invention is:
A kind of dual wavelength single chip LED, it is characterized in that, comprise several n type contact layers, two active layers and several p type contact layers, said n type contact layer, active layer and p type contact layer are the mutual superposition structure, described two quantum well that active layer is different optical bands, and a shared p type contact layer or a n type contact layer between above-mentioned two active layers.
As a shared p type contact layer between two active layers, described dual wavelength single chip LED structure devices, the n type contact layer that superposes successively from bottom to up, a quantum well A, a p type contact layer, a quantum well B and a n type contact layer.
As a shared n type contact layer between two active layers, described dual wavelength single chip LED structure devices, the p type contact layer that superposes successively from bottom to up, a quantum well A, a n type contact layer, a quantum well B and a p type contact layer.
Described n type contact layer or p type contact layer can be the combination of GaN layer, AlN layer, AlGaN layer, InGaN layer, InAlN layer, InAlGaN layer or above-mentioned alloy.
Described quantum well can be In
xGa
1-xN, Al
xGa
1-xN or AlInGaN.The periodicity of described quantum well can be 1～20.
In each cycle of described quantum well, the thickness of trap can be between 1nm～5nm, and the thickness at base can be between 6nm～20nm.
The shared p type contact layer or the thickness range of n type contact layer can be 300nm～1500nm between described two active layers.
Compared with prior art, the invention has the beneficial effects as follows:
Adopt the device of LED of the present invention, the luminous intensity of the quantum well of two kinds of different optical bands of size control that can be by the added electric current of each electrode of control, voltage, promptly the device of LED of the present invention is equivalent to two light sources independently separately.And because the existence of public p type layer or n type layer between two active layers makes the injection efficiency of active layer all obtain relative raising.The realization of this structure need not fluorescent material to preparation, and the Single chip white light LED of higher electricity conversion is significant.Can also according to the standard colorimetric distribution map, regulate and control the colourity of white light LEDs by adjusting the three primary colors light strength ratio.The circuit that LED device of the present invention has device is simple relatively, and the life-span is long, has higher electricity conversion.Will be at white-light illuminating, panchromatic demonstration and light adjusting field play a significant role.
Description of drawings
Fig. 1 is the embodiment of the invention structural representation of the GaN base LED of p type contact layer altogether;
Fig. 2 is the embodiment of the invention structural representation of the GaN base LED of n type contact layer altogether;
Embodiment
Below in conjunction with the drawings and specific embodiments the present invention is described in further detail:
Embodiment one:
1) adopts mocvd method, with the non-GaN film of mixing GaN film and the doping of one deck n type of normal growth technology growth one deck;
Be specially: as shown in Figure 1, with common metal-organic chemical vapor deposition equipment (MOCVD) equipment, substrate 1 adopts the Sapphire Substrate of (0001) face, hydrogen (H
2) under the atmosphere,, be cooled to 450 ℃～550 ℃ nitrogenize 1100 ℃～1150 ℃ following high-temperature baking substrates 5～15 minutes, and be source growing low temperature GaN nucleating layer 25nm with trimethyl gallium and ammonia, be warmed up to 1050 ℃ of thick non-GaN of mixing of growth 1000nm then;
On the basis of the above, feed silane (SiH to reative cell again
4), with the growth rate growing n-type Doped GaN of 1800nm per hour, thickness is 1000nm.
2) on the GaN film 3 that the n type mixes, cool to the Multiple Quantum Well 4 of growth green light band about 700 ℃; Be 5 In of continued growth
xGa
1-xThe N/GaN Multiple Quantum Well uses trimethyl indium (TMIn) as the In source, wherein about X=0.35 as the active layer of green light band.
3) elevated temperature to 1000 ℃ on the Multiple Quantum Well 4 of green light band, with two luxuriant magnesium (Cp2Mg) as the Mg source, the p type GaN layer 5 of growing high-quality, thickness is about 450nm, and is cooled to 800 ℃ to the p type GaN activation of annealing in the MOCVD reative cell.
4) keeping temperature at p type GaN layer 5 is 5 Multiple Quantum Well 6 of 800 ℃ of continued growth blue wave bands, and the x value in this active layer is about 0.2, to obtain blue light than hanging down in the step 2;
5) continued growth n type Doped GaN layer needs to improve SiH as the contact layer of the n type electrode of LED in this step
4So that make n type Ohm contact electrode, thickness is about 1000nm to flow with the doping content that improves n type layer;
6) on the GaN film 3 that the n type mixes, etch step with inductively coupled plasma (ICP) method and be used to make contact electrode (as Fig. 1) with p type GaN layer 5, make the metal Ohm contact electrode on the step that etches, etching gas can be used chlorine, argon gas, boron chloride etc.;
7) sputtered with Ti/Al/Ni/Au on the uppermost n type layer of epitaxial wafer and the n type layer step that etch, sputter Ni/Au metal prepares Ohm contact electrode on p type layer step.
Embodiment two:
1) adopts mocvd method, with the non-GaN film of mixing GaN film and the doping of one deck n type of normal growth technology growth one deck;
Be specially: as shown in Figure 2, with common metal-organic chemical vapor deposition equipment (MOCVD) equipment, substrate 1 adopts the Sapphire Substrate of (0001) face, hydrogen (H
2) under the atmosphere,, be cooled to 450 ℃～550 ℃ nitrogenize 1100 ℃～1150 ℃ following high-temperature baking substrates 5～15 minutes, and be source growing low temperature GaN nucleating layer 25nm with trimethyl gallium and ammonia, be warmed up to 1050 ℃ of thick non-GaN of mixing of growth 1000nm then;
Mix on GaN layer 2 basis non-, reduce temperature to 1000 ℃, feed two luxuriant magnesium (Cp2Mg) as the Mg source to reative cell again, the growing p-type Doped GaN, thickness is 800nm, and is cooled to 800 ℃ to the p type GaN activation of annealing in the MOCVD reative cell.
2) Multiple Quantum Well 4 of reduction temperature to 720 ℃ growth green light band on the GaN film 3 that the p type mixes; Be 5 In of continued growth
xGa
1-xThe N/GaN quantum well uses trimethyl indium (TMIn) as the In source, about X=0.30 as the active layer of green light band;
3) on the Multiple Quantum Well 4 of green light band, be warming up to 1100 ℃ with silane SiH
4Be n type dopant growing n-type GaN layer 5, thickness is 1000nm;
4) on n type GaN layer 5, be cooled to the Multiple Quantum Well 6 of 780 ℃ of continued growth blue wave bands, low than in the step 2 of the x value in this active layer, X=0.15 is to obtain blue light;
5) be warming up to the contact layer of 1000 ℃ of continued growth p type Doped GaN layers again, need to improve two luxuriant magnesium (Cp2Mg) SiH in this step as the p type electrode of LED
4Flow with the doping content that improves p type layer so that make p type Ohm contact electrode; Thickness is about 400nm.
6) on the GaN film 3 that the n type mixes, etch step with inductively coupled plasma (ICP) method and be used to make contact electrode (as Fig. 2) with p type GaN layer 5, make the metal Ohm contact electrode on the step that etches, etching gas can be used chlorine, argon gas, boron chloride etc.;
7) sputter Ni/Au on the uppermost p type layer of epitaxial wafer and the p type layer step that etch, sputtered with Ti/Al/Ni/Au metal prepares Ohm contact electrode on p type layer step.
Among above-mentioned two embodiment, related contact layer and active layer are not limited to the explanation of this example, not only can be binary system nitride such as AlN, InN, GaN, and can be quaternary system nitride such as ternary system nitride such as AlGaN or InGaN, or even AlInGaN.
In addition, the periodicity of quantum well can be 1～20, and each periodic thickness of described quantum well is, the thickness of trap is between the 1nm-5nm, and the thickness at base can be between the 6nm-20nm.
The shared p type contact layer or the thickness range of n type contact layer are 300nm-1500nm between described two active layers.
In addition, active layer except that blue wave band, green light band quantum well, can also be other material the quantum well of corresponding optical band.
More than by specific embodiment dual wavelength single chip LED structure devices provided by the present invention has been described, it will be understood by those of skill in the art that in the scope that does not break away from essence of the present invention, can make certain deformation or modification to the present invention; Its preparation method also is not limited to disclosed content among the embodiment.
Claims (8)
1, a kind of dual wavelength single chip LED, it is characterized in that, comprise several n type contact layers, two active layers and several p type contact layers, said n type contact layer, active layer and p type contact layer are the mutual superposition structure, described two quantum well that active layer is different optical bands, and a shared p type contact layer or a n type contact layer between above-mentioned two active layers.
2, dual wavelength single chip LED as claimed in claim 1, it is characterized in that, as a shared p type contact layer between two active layers, described dual wavelength single chip LED structure devices is the n type contact layer that superposes successively from bottom to up, a quantum well A, a p type contact layer, a quantum well B and a n type contact layer.
3, dual wavelength single chip LED as claimed in claim 1, it is characterized in that, as a shared n type contact layer between two active layers, described dual wavelength single chip LED structure devices is the p type contact layer that superposes successively from bottom to up, a quantum well A, a n type contact layer, a quantum well B and a p type contact layer.
4, as claim 1,2 or 3 described dual wavelength single chip LED structure devices, it is characterized in that described n type contact layer or p type contact layer are the combination of GaN layer, AlN layer, AlGaN layer, InGaN layer, InAlN layer, InAlGaN layer or above-mentioned alloy.
5, as claim 1,2 or 3 described dual wavelength single chip LED structure devices, it is characterized in that described quantum well is In
xGa
1-xN, Al
xGa
1-xN or AlInGaN.
6, dual wavelength single chip LED structure devices as claimed in claim 5 is characterized in that, the periodicity of described quantum well is 1～20.
7, dual wavelength single chip LED structure devices as claimed in claim 6 is characterized in that, in each cycle of described quantum well, the thickness of trap is between the 1nm-5nm, and the thickness at base is between 6nm～20nm.
As claim 1,2 or 3 described dual wavelength single chip LED structure devices, it is characterized in that 8, the shared p type contact layer or the thickness range of n type contact layer are 300nm～1500nm between described two active layers.
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| WO2010034159A1 (en) * | 2008-09-26 | 2010-04-01 | Hsu Chen | Adapted semiconductor light emitting device and method for manufacturing the same |
| CN102244167A (en) * | 2011-07-28 | 2011-11-16 | 北京大学 | Method for preparing single chip white light LED (light-emitting diode) |
| CN102318088A (en) * | 2008-12-24 | 2012-01-11 | 3M创新有限公司 | The method for preparing two-sided wavelength shifter and the light generating device that uses said two-sided wavelength shifter |
| CN102709418A (en) * | 2012-07-16 | 2012-10-03 | 广东工业大学 | Spectrum adjustable zinc oxide (ZnO)/gallium nitride (GaN) based white light emitting device structure |
| CN103560188A (en) * | 2013-08-01 | 2014-02-05 | 圆融光电科技有限公司 | Structure design and fabrication method of multi-section wide-spectrum LED |
| CN104157762A (en) * | 2014-08-25 | 2014-11-19 | 清华大学 | Fluorescent-powder-free white-light LED and fluorescent-powder-free white-light LED light-emitting module |
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| CN111527607A (en) * | 2017-12-27 | 2020-08-11 | 艾利迪公司 | Pseudo substrate for photoelectric device and its manufacturing method |
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| CN102171843B (en) * | 2008-09-26 | 2014-03-26 | 徐镇 | Adapted semiconductor light emitting device and method for manufacturing the same |
| CN102171843A (en) * | 2008-09-26 | 2011-08-31 | 徐镇 | Adapted semiconductor light emitting device and method for manufacturing the same |
| WO2010034159A1 (en) * | 2008-09-26 | 2010-04-01 | Hsu Chen | Adapted semiconductor light emitting device and method for manufacturing the same |
| CN102318088A (en) * | 2008-12-24 | 2012-01-11 | 3M创新有限公司 | The method for preparing two-sided wavelength shifter and the light generating device that uses said two-sided wavelength shifter |
| CN102244167A (en) * | 2011-07-28 | 2011-11-16 | 北京大学 | Method for preparing single chip white light LED (light-emitting diode) |
| CN102709418A (en) * | 2012-07-16 | 2012-10-03 | 广东工业大学 | Spectrum adjustable zinc oxide (ZnO)/gallium nitride (GaN) based white light emitting device structure |
| CN103560188B (en) * | 2013-08-01 | 2016-07-06 | 圆融光电科技有限公司 | The structural design of many pitch widths spectrum LED and manufacture method |
| CN103560188A (en) * | 2013-08-01 | 2014-02-05 | 圆融光电科技有限公司 | Structure design and fabrication method of multi-section wide-spectrum LED |
| CN104157762A (en) * | 2014-08-25 | 2014-11-19 | 清华大学 | Fluorescent-powder-free white-light LED and fluorescent-powder-free white-light LED light-emitting module |
| CN106410006A (en) * | 2016-06-22 | 2017-02-15 | 厦门乾照光电股份有限公司 | Ultraviolet light emitting diode integrating visible light indicating device and production method thereof |
| CN106410006B (en) * | 2016-06-22 | 2018-08-17 | 厦门乾照光电股份有限公司 | A kind of UV LED and its production method of integrated visible light instruction device |
| CN106784215A (en) * | 2017-02-06 | 2017-05-31 | 福建中晶科技有限公司 | It is a kind of to send out complex light various and the preparation method of monochromatic light LED chip |
| CN111527607A (en) * | 2017-12-27 | 2020-08-11 | 艾利迪公司 | Pseudo substrate for photoelectric device and its manufacturing method |
| CN111527607B (en) * | 2017-12-27 | 2022-01-18 | 艾利迪公司 | Pseudo substrate for photoelectric device and its manufacturing method |
| CN109599466A (en) * | 2018-12-03 | 2019-04-09 | 广东工业大学 | A kind of dual-wavelength LEDs epitaxial structure and preparation method thereof |
| US11411134B2 (en) | 2019-01-25 | 2022-08-09 | Beijing Display Technology Co., Ltd. | Light emitting apparatus, method of fabricating light emitting apparatus, and method of emitting light using light emitting apparatus thereof |
| WO2021134510A1 (en) * | 2019-12-31 | 2021-07-08 | 重庆康佳光电技术研究院有限公司 | Composite dual-wavelength led chip and manufacturing method therefor |
| CN116636023A (en) * | 2020-12-14 | 2023-08-22 | 亮锐有限责任公司 | Light emitting diode device |
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Application publication date: 20080903 |