CN103560188B - The structural design of many pitch widths spectrum LED and manufacture method - Google Patents

The structural design of many pitch widths spectrum LED and manufacture method Download PDF

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CN103560188B
CN103560188B CN201310332338.2A CN201310332338A CN103560188B CN 103560188 B CN103560188 B CN 103560188B CN 201310332338 A CN201310332338 A CN 201310332338A CN 103560188 B CN103560188 B CN 103560188B
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CN103560188A (en
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黄小辉
陈大旭
周德保
杨东
郑远志
陈向东
康建
梁旭东
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Epitop Photoelectric Technology Co., Ltd.
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    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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    • C—CHEMISTRY; METALLURGY
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    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
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    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds

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Abstract

The invention provides a kind of many pitch widths spectrum LED structure design and fabrication method: (1) passes into source metal and V race reactant in advance on substrate, by pyrolytic, substrate forms one layer of cushion；(2) improve growth temperature, grow the GaN layer of undoped on the buffer layer, and in the GaN layer of undoped, grow one layer of N-type GaN layer；(3) temperature is adjusted to the temperature of applicable grown quantum trap, N-type GaN layer grows GaN/InGaN multicycle quantum well structure；(4) on GaN/InGaN multicycle quantum well structure, one layer of P type GaN is grown；(5) (3) and (4) are repeated, to form the more piece LED structure that multiple [GaN/InGaN multicycle SQW+P type GaN layer] combines.The embodiment of the present invention is effectively increased the luminous efficiency of LED, and defines the LED structure of wide spectrum.

Description

The structural design of many pitch widths spectrum LED and manufacture method
Technical field
The present invention relates to the growing method of a kind of Group III-V semiconductor light emitting diode, be specifically related to structural design and the manufacture method of the light emitting diode (LED) of a kind of more piece and wide spectrum.
Background technology
III-V group semi-conductor material, it is widely used in fields such as luminous lighting, solar cell and high power devices, especially with GaN(gallium nitride) series be representative semiconductor material with wide forbidden band, it is the third generation semi-conducting material after Si and GaAs, receives the extensive concern of scientific research circle and industrial circle.And GaN is currently the topmost material as blue-green light LED, carries out in an all-round way in industrial circle, and constantly seizes traditional lighting market.
But, with GaN growth LED out, there are some defects to be solved of itself.1, owing to the high-quality bulk GaN crystal of commercialization can't be obtained at present, general foreign substrate carrys out extension, and between GaN and Sapphire Substrate (or Si substrate), have bigger lattice mismatch, cause that epitaxial layer produces dislocation, this dislocation can extend and traverse active layer, limiting the raising of GaN device performance, the defect of active layer too much limits the injection in hole；2 additionally, due to there is mobility low in hole itself, and the shortcomings such as diffusion length is short, hole can only migrate to formation radiation recombination in two or three SQWs of P type GaN layer.In tradition MQW, most trap is not luminous, causes SQW utilization rate non-normally low；3, because luminescence is concentrated mainly in last two or three SQWs, therefore the LED emission wavelength of traditional structure is more single, and spectrum is single, it is impossible to make full-color light and white light.
In sum, the method for traditional grown quantum trap all there is problems in that (1) have chance with position dislocation density is high more or less, hole after injecting easily with these dislocations formation non-radiative recombination；(2) hole that P-type layer provides is not enough to migrate in SQW above, and the utilization rate of SQW compares relatively low, significantly limit the raising of luminous efficiency；(3) luminescent spectrum is single.
Summary of the invention
The invention provides a kind of many pitch widths spectrum LED structure design and fabrication method: (1) passes into source metal and V race reactant in advance on substrate, by pyrolytic, form one layer of cushion over the substrate；(2) improve growth temperature, described cushion grows the GaN layer of undoped, and in the GaN layer of described undoped, grows one layer of N-type GaN layer；(3) temperature being adjusted to the temperature of applicable grown quantum trap, grows GaN/InGaN multicycle quantum well structure in described N-type GaN layer, the thickness of GaN/InGaN described in each cycle is 5～30nm；Wherein, the trap of each described SQW is wide is 2～5nm, and building wide is 5～25nm, and periodicity is 1～50；(4) growing one layer of P type GaN on described GaN/InGaN multicycle quantum well structure, the thickness of described P type GaN is 0～30nm, and doping content is 1x1017～1x1020cm-3；(5) (3) and (4) are repeated, to form the more piece LED structure that multiple [GaN/InGaN multicycle SQW+P type GaN layer] combines；Wherein, the thickness of the described P type GaN layer of last layer is 50～500nm, and doping content is 1x1017～1x1020cm-3。
It is an object of the invention to overcome the defect of tradition LED structure, it is too low that the structure utilizing more piece LED solves hole injection efficiency, and the problem that SQW utilization rate is relatively low, improves method and the quantity of the sub-trap of hole injection fluence, improve the utilization rate of SQW, thus improving the luminous efficiency of LED further.
The LED structure that it is another object of the present invention to utilize more piece designs, and forms the SQW series connection of various luminescence band.According to demand, the luminescence band of each joint SQW can be not quite similar, thus forming the LED of wide spectrum.
Accompanying drawing explanation
Fig. 1 is the flow chart of many pitch widths spectrum LED structure one embodiment of design and fabrication method provided by the invention；
Fig. 2 is the schematic diagram of many pitch widths spectrum LED structure provided by the invention.
Detailed description of the invention
Fig. 1 is the flow chart of many pitch widths spectrum LED structure one embodiment of design and fabrication method provided by the invention, as it is shown in figure 1, the method includes:
(1) on substrate, pass into source metal and V race reactant in advance, by pyrolytic, substrate forms one layer of cushion；
When the surface temperature of backing material is increased to about 530 DEG C, passing into source metal and ammonia (NH3) reacts 3-5 minute, source metal and NH3 decompose concurrent biochemical reaction at this temperature, form unformed buffering grown layer.1. described source metal reactant and cushion have the property that can resolve into metallic atom when high temperature；2. metallic atom can react with atom N, forms unformed GaN cushion as depicted；3. the thickness of cushion can be 0～100nm.
(2) improve growth temperature, grow the GaN layer of undoped on the buffer layer, and in the GaN layer of undoped, grow one layer of N-type GaN layer；
Reaction chamber temperature is brought up to 800～1000 DEG C, now cushion carries out decomposing polymerization, form equally distributed one-tenth nuclear island, pressure maintains 200～600mbar on this basis subsequently, pass into trimethyl gallium and NH3, make nucleus island grow up and merge, do not mix any impurity and form unadulterated GaN layer this layer thickness about 500～2000nm.Reative cell is continuously heating to 1000～1100 DEG C, mixes N-type impurity in the growth course of GaN, forms N-type GaN, and doping content can be 1x1017～5x1019cm-3, the thickness of this layer can be 1000～3000nm.
(3) temperature being adjusted to the temperature of applicable grown quantum trap, grows GaN/InGaN multicycle quantum well structure in N-type GaN layer, the thickness of GaN/InGaN described in each cycle is 5～30nm；Wherein, the trap of each SQW is wide is 2～5nm, and building wide is 5～25nm, and periodicity is 1～50；
Grown quantum well layer on the N-type GaN grown, SQW adopt GaN/InGaN MQW structure, periodic thickness be 5～30nm(wherein trap wide be 2～5nm, building wide is 5～25nm), its periodicity is 1～50.
(4) growing one layer of P type GaN on GaN/InGaN multicycle quantum well structure, the thickness of this P type GaN is 0～30nm, and doping content is 1x1017～1x1020cm-3；
In the structure of the GaN/InGaN MQW grown, the P type GaN layer of p type impurity is mixed in growth, and the thickness of this layer is 0～30nm, and doping content can be 1x1017～1x1020cm-3, form the first segment structure of LED of the present invention with this.
(5) (3) and (4) are repeated, to form the more piece LED structure that multiple [GaN/InGaN multicycle SQW+P type GaN layer] combines；Wherein, the thickness of the P type GaN layer of last layer is 50～500nm, and doping content is 1x1017～1x1020cm-3；
Continued growth GaN/InGaN multiple quantum well layer after first segment structural constraint, its thickness and periodicity are with described in (3), and the P type GaN layer of p type impurity is mixed in continued growth on this basis, and the thickness of this layer is 0～30nm, P type doping content can be 1x1017～1x1020cm-3, form the second section structure of LED of the present invention with this；Repeated growth GaN/InGaN MQW and P type GaN layer, thus forming the more piece LED structure that multiple [GaN/InGaN MQW+P type GaN] combines, more piece can be 1～50 joint.
Because in more piece LED structure, P type GaN layer exists, each joint all can form an internal PN junction structure, it is low and transition cannot enter above SQW and carry out the defect of radiation recombination that this more piece LED structure can solve hole mobility, thus improve the utilization ratio of SQW, and each joint can be carried out trap width and well depth design.
The above substrate can be the one of which such as sapphire, graphic sapphire (PSS), Si, SiC, ZnO, glass, copper；
Described cushion can be GaN, InN, AlN one of which or mixture；
SQW number in described each joint can be 1～50；
The joint number of described more piece LED is n, n=1～50；
Each joint SQW in described more piece LED can the same can also be mutually distinguishable, say, that the trap width of each joint SQW and well depth can identical can also be different；
Described SQW different more piece LED structure can form the wide spectrum LED of the different luminescent spectrum of each joint, it is possible to contains all wave bands from purple light to green glow.
Described extension can be metal organic chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE), hydride gas-phase epitaxy (HVPE).
The present invention has advantage highlighted below:
1) width and the periodicity of each joint SQW can be designed according to the diffusion length in hole such that it is able to improve the utilization rate of SQW in each joint to greatest extent；
2) can solve because under high current density, carrier overflows the efficiency decline problem caused；
3) because each joint has the existence of P-type layer, it is possible to prevent the effect that the non-radiative recombination center that the conduction of SQW Dislocations causes increases along with the increase of SQW periodic thickness；
4) existence of P-type layer in each joint, it is possible to further enhance the antistatic effect of LED component；
5) each joint can design different trap width, simultaneously can mix different In content, all send out the light of different wave length realizing each joint, containing the purple light LED structure to the wide spectrum of gold-tinted thus being formed；
6) preparation being formed as white light LEDs of wide spectrum LED provides and is likely to.
Fig. 2 is the schematic diagram of many pitch widths spectrum LED structure provided by the invention.This LED structure can be fabricated by by many pitch widths spectrum LED structure design and fabrication method as shown in Figure 1.As in figure 2 it is shown, this many pitch widths spectrum LED structure includes: 101: cushion (BufferLayer), it is possible to be GaN, InN, AlN one of which or its mixture；102: unadulterated GaN base plinth layer (UndopedGaN)；103:N type GaN layer (NdopedGaN)；104:GaN quantum barrier layer；105:InGaN quantum well layer (GaN(Well))；106: the GaN protective layer (GaN(1) after growth first segment InGaN SQW)；107: P type GaN layer (GaN(mixes the Mg)-Section 1 in first segment LED)；GaN protective layer after 108: growth regulation n joint InGaN SQW；P type GaN layer in 109: the n-th joint LED, because this layer is last layer, the thickness of last layer of P type GaN is thicker with other P type GaN layer, is 50～500nm；Periodicity x and the y of SQW can be 1～50.
The manufacture method of many pitch widths spectrum LED structure corresponding under several spectrum given below.
5 joint blue light LED structures of single wavelength (455nm), including following several steps:
1) MOCVD reaction chamber temperature rises to 520 DEG C, and pressure is 600mbar, passes into trimethyl gallium (150ml/min) and NH33 minute simultaneously, reacts on silicon substrate (Si), forms the GaN cushion 101 layers of 25nm；
2) through 10 minutes, temperature being increased to 1030 DEG C, pressure is down to 500mbar, GaN cushion and is decomposed reaction, GaN cushion decompose after at substrate surface diffusive migration, and to form density be 2.3 × 106cm-2The nucleation island of the GaN of left and right；
3) temperature maintaining 1030 DEG C, pressure keeps 500mbar, passes into hydrogen, trimethyl gallium (200ml/min) and NH340 minute, and gallium nitride nucleus is formed bottom gold grain and grows up, GaN longitudinal growth, the GaN island structure of formation three-dimensional；
4) reaction chamber temperature is increased to 1050 DEG C, passes into hydrogen, trimethyl gallium (280ml/min) and ammonia 30 minutes, and pressure keeps 200mbar, and gallium nitride nucleus is become cross growth pattern by longitudinally growing up, and grow the non-doped gan layer 102 layers of one layer of 1200nm thickness；
5) temperature maintains 1050 DEG C, and pressure maintains 200mbar, passes into hydrogen, trimethyl gallium (300ml/min) and ammonia 40 minutes, and mixes silane.Wherein V/III ratio is 1350, and growth a layer thickness is the N-type GaN103 layer of 1500nm, and the doping content of N-type GaN is 1 × 1019cm-3；
6) reaction chamber temperature being down to 840 DEG C, pressure is adjusted to 300mbar, passes into nitrogen, triethyl-gallium (360ml/min) ammonia, and growth GaN quantum is built in a nitrogen atmosphere, mixes Si impurity, and doping content is 1 × 1018cm-3.Growth time be 2 points 30 seconds, thickness is 12nm, grows 104 layers；
7) reaction chamber temperature is down to 760 DEG C, pressure maintains 300mbar, pass into nitrogen, triethyl-gallium (120ml/min), trimethyl indium (400ml/min) and ammonia, growth InGaN SQW in a nitrogen atmosphere, growth time be 1 point 30 seconds, thickness is that 3nm, In content is about 10%, grows 105 layers；
8) repeat the 6th step to the 7th step 4 circulation, form the quantum well structure in 4 cycles；
9) reaction chamber temperature rising to 840 DEG C, pressure is adjusted to 300mbar, passes into nitrogen, triethyl-gallium (360ml/min) ammonia, and growth GaN quantum is built in a nitrogen atmosphere, grows the GaN protective layer 106 layers of 1 minute；
10) after following 106 closely, growth, rises to 900 DEG C by temperature, and pressure is adjusted to 200mbar, passes into nitrogen, triethyl-gallium (360ml/min) ammonia, inserts Mg impurity, and the doping content of Mg is 1 × 1019cm-3.Growth time be 1 point 30 seconds, this layer is 107P type GaN layer, and these 101 107 layers is the first segment of this more piece LED structure；
11) repeating the 6th step to the 10th step 5 circulation, form the 5 joint blue light LED structures that wavelength is 455nm, the thickness of last P type GaN is 200nm, and doping content is 2 × 1019cm-3；
12) being annealed processing to this 5 joint LED, chip manufacture becomes 1mm2The chip of size, passes into the electric current of 350mA, and luminous efficiency is 180lm/W, and antistatic effect 4000V percent of pass under Human Body Model is 98%.
8 joint green light LED structures of single wavelength (525nm), including following several steps:
1) MOCVD reaction chamber temperature rises to 520 DEG C, pressure is 600mbar, pass into trimethyl gallium (150ml/min) and ammonia (NH3) 3 minutes simultaneously, graphical sapphire substrate (PSS) reacts, form the GaN cushion 101 layers of 25nm；
2) through 10 minutes, temperature being increased to 1030 DEG C, pressure is down to 500mbar, GaN cushion and is decomposed reaction, GaN cushion decompose after at substrate surface diffusive migration, and to form density be 2.3 × 106cm-2The nucleation island of the GaN of left and right；
3) temperature maintaining 1030 DEG C, pressure keeps 500mbar, passes into hydrogen, trimethyl gallium (200ml/min) and NH340 minute, and gallium nitride nucleus is formed bottom gold grain and grows up, GaN longitudinal growth, the GaN island structure of formation three-dimensional；
4) reaction chamber temperature is increased to 1050 DEG C, passes into hydrogen, trimethyl gallium (280ml/min) and ammonia 30 minutes, and pressure keeps 200mbar, and gallium nitride nucleus is become cross growth pattern by longitudinally growing up, and grow the non-doped gan layer 102 layers of one layer of 1200nm thickness；
5) temperature maintains 1050 DEG C, and pressure maintains 200mbar, passes into hydrogen, trimethyl gallium (300ml/min) and ammonia 40 minutes, and mixes silane.Wherein V/III ratio is 1350, and growth a layer thickness is the N-type GaN103 layer of 1500nm, and the doping content of N-type GaN is 1 × 1019cm-3；
6) reaction chamber temperature being down to 840 DEG C, pressure is adjusted to 300mbar, passes into nitrogen, triethyl-gallium (360ml/min) ammonia, and growth GaN quantum is built in a nitrogen atmosphere, mixes Si impurity, and doping content is 1 × 1018cm-3.Growth time be 2 points 30 seconds, thickness is 12nm, grows 104 layers；
7) reaction chamber temperature is down to 740 DEG C, pressure maintains 300mbar, pass into nitrogen, triethyl-gallium (160ml/min), trimethyl indium (400ml/min) and ammonia, growth InGaN SQW in a nitrogen atmosphere, growth time be 1 point 30 seconds, thickness is that 4nm, In content is about 18%, grows 105 layers；
8) repeat the 6th step to the 7th step 3 circulation, form the quantum well structure in 3 cycles；
9) reaction chamber temperature rising to 840 DEG C, pressure is adjusted to 300mbar, passes into nitrogen, triethyl-gallium (360ml/min) ammonia, and growth GaN quantum is built in a nitrogen atmosphere, grows the GaN protective layer 106 layers of 1 minute；
10) after following 106 closely, growth, rises to 900 DEG C by temperature, and pressure is adjusted to 200mbar, passes into nitrogen, triethyl-gallium (360ml/min) ammonia, inserts Mg impurity, and the doping content of Mg is 1 × 1019cm-3.Growth time be 1 point 30 seconds, this layer is 107P type GaN layer, and these 101 107 layers is the first segment of this more piece LED structure；
11) repeating the 6th step to the 10th step 8 circulation, form the 8 joint green light LED structures that wavelength is 525nm, the thickness of last P type GaN is 250nm, and doping content is 2 × 1019cm-3；
12) being annealed processing to this 8 joint LED, chip manufacture becomes 300x300 μm2The chip of size, under 20mA, luminous intensity arrives 400mcd, and antistatic effect 4000V percent of pass under Human Body Model is 98%.
Green/blue bi-coloured light combination more piece LED structure, including following several steps:
1) MOCVD reaction chamber temperature rises to 520 DEG C, and pressure is 600mbar, passes into trimethyl gallium (150ml/min) and NH33 minute simultaneously, reacts on carborundum (SiC), forms the GaN cushion 101 layers of 25nm；
2) through 10 minutes, temperature being increased to 1030 DEG C, pressure is down to 500mbar, GaN cushion and is decomposed reaction, GaN cushion decompose after at substrate surface diffusive migration, and to form density be 2.3 × 106cm-2The nucleation island of the GaN of left and right；
3) temperature maintaining 1030 DEG C, pressure keeps 500mbar, passes into hydrogen, trimethyl gallium (200ml/min) and NH340 minute, and gallium nitride nucleus is formed bottom gold grain and grows up, GaN longitudinal growth, the GaN island structure of formation three-dimensional；
4) reaction chamber temperature is increased to 1050 DEG C, passes into hydrogen, trimethyl gallium (280ml/min) and ammonia 40 minutes, and pressure keeps 200mbar, and gallium nitride nucleus is become cross growth pattern by longitudinally growing up, and grow the non-doped gan layer 102 layers of one layer of 1600nm thickness；
5) temperature maintains 1050 DEG C, and pressure maintains 200mbar, passes into hydrogen, trimethyl gallium (300ml/min) and ammonia 30 minutes, and mixes silane.Wherein V/III ratio is 1350, and growth a layer thickness is the N-type GaN103 layer of 1100nm, and the doping content of N-type GaN is 1 × 1019cm-3；
6) reaction chamber temperature being down to 840 DEG C, pressure is adjusted to 300mbar, passes into nitrogen, triethyl-gallium (360ml/min) ammonia, and growth GaN quantum is built in a nitrogen atmosphere, mixes Si impurity, and doping content is 1 × 1018cm-3.Growth time be 2 points 30 seconds, thickness is 12nm, grows 104 layers；
7) reaction chamber temperature is down to 740 DEG C, pressure maintains 300mbar, pass into nitrogen, triethyl-gallium (160ml/min), trimethyl indium (400ml/min) and ammonia, growth InGaN SQW in a nitrogen atmosphere, growth time be 1 point 30 seconds, thickness is that 4nm, In content is about 18%, grows green glow 105 layers；
8) repeat the 6th step to the 7th step 3 circulation, form the green quantum well structure in 3 cycles；
9) reaction chamber temperature rising to 840 DEG C, pressure is adjusted to 300mbar, passes into nitrogen, triethyl-gallium (360ml/min) ammonia, and growth GaN quantum is built in a nitrogen atmosphere, grows the GaN protective layer 106 layers of 1 minute；
10) after following 106 closely, growth, rises to 900 DEG C by temperature, and pressure is adjusted to 200mbar, passes into nitrogen, triethyl-gallium (360ml/min) ammonia, inserts Mg impurity, and the doping content of Mg is 1 × 1019cm-3.Growth time be 1 point 30 seconds, this layer is 107P type GaN layer, and these 101 107 layers is the first segment of this more piece LED structure, and first segment luminescence is green glow；
11) repeat and carry out the 6th step to the 10th step 1 circulation, form the second section green light LED structure that wavelength is 525nm；
12) reaction chamber temperature being down to 840 DEG C, pressure is adjusted to 300mbar, passes into nitrogen, triethyl-gallium (360ml/min) ammonia, and growth GaN quantum is built in a nitrogen atmosphere, mixes Si impurity, and doping content is 1 × 1018cm-3.Growth time be 2 points 30 seconds, thickness is 12nm, grows 104 layers；
13) reaction chamber temperature is down to 760 DEG C, pressure maintains 300mbar, pass into nitrogen, triethyl-gallium (120ml/min), trimethyl indium (400ml/min) and ammonia, growth InGaN SQW in a nitrogen atmosphere, growth time be 1 point 30 seconds, thickness is that 3nm, In content is about 10%, grows blue light 105 layers；
14) reaction chamber temperature rising to 840 DEG C, pressure is adjusted to 300mbar, passes into nitrogen, triethyl-gallium (360ml/min) ammonia, and growth GaN quantum is built in a nitrogen atmosphere, grows the GaN protective layer 106 layers of 1 minute；
15) after following 106 closely, growth, rises to 900 DEG C by temperature, and pressure is adjusted to 200mbar, passes into nitrogen, triethyl-gallium (360ml/min) ammonia, inserts Mg impurity, and the doping content of Mg is 1 × 1019cm-3.Growth time be 1 point 30 seconds, this layer is 107P type GaN layer, and these 101 107 layers is Section three of this more piece LED structure, and Section of three luminescence is blue light；
16) repeat the 12nd step to the 15th step 3 circulation, form the first segment blue light quantum well structure in 3 cycles；
17) repeating and carry out the 12nd step to the 16th step 1 circulation, form the second section blue light LED structure that wavelength is 455nm, the thickness of last P type GaN is 300nm, and doping content is 2 × 1019cm-3；
18) it is annealed processing to this 4 joint LED, it is possible to obtain 300x300 μm2The chip of size, under 20mA, voltage is less than 3.2V, it is possible to be simultaneously emitted by blue light and the green glow of 455nm and 525nm wave band, forms green/blue bi-coloured light combination more piece LED.
Green/blue/purple three coloured light combination more piece LED structure, including following several steps:
1) MOCVD reaction chamber temperature rises to 520 DEG C, and pressure is 600mbar, passes into trimethyl gallium (150ml/min) and NH33 minute simultaneously, reacts on graphical sapphire substrate (PSS), forms the GaN cushion 101 layers of 25nm；
2) through 10 minutes, temperature being increased to 1030 DEG C, pressure is down to 500mbar, GaN cushion and is decomposed reaction, GaN cushion decompose after at substrate surface diffusive migration, and to form density be 2.3 × 106cm-2The nucleation island of the GaN of left and right；
3) temperature maintaining 1030 DEG C, pressure keeps 500mbar, passes into hydrogen, trimethyl gallium (200ml/min) and NH340 minute, and gallium nitride nucleus is formed bottom gold grain and grows up, GaN longitudinal growth, the GaN island structure of formation three-dimensional；
4) reaction chamber temperature is increased to 1050 DEG C, passes into hydrogen, trimethyl gallium (280ml/min) and ammonia 40 minutes, and pressure keeps 200mbar, and gallium nitride nucleus is become cross growth pattern by longitudinally growing up, and grow the non-doped gan layer 102 layers of one layer of 1600nm thickness；
5) temperature maintains 1050 DEG C, and pressure maintains 200mbar, passes into hydrogen, trimethyl gallium (300ml/min) and ammonia 30 minutes, and mixes silane.Wherein V/III ratio is 1350, and growth a layer thickness is the N-type GaN103 layer of 1100nm, and the doping content of N-type GaN is 1 × 1019cm-3；
6) reaction chamber temperature being down to 840 DEG C, pressure is adjusted to 300mbar, passes into nitrogen, triethyl-gallium (360ml/min) ammonia, and growth GaN quantum is built in a nitrogen atmosphere, mixes Si impurity, and doping content is 1 × 1018cm-3.Growth time be 2 points 30 seconds, thickness is 12nm, grows 104 layers；
7) reaction chamber temperature is down to 740 DEG C, pressure maintains 300mbar, pass into nitrogen, triethyl-gallium (160ml/min), trimethyl indium (400ml/min) and ammonia, growth InGaN SQW in a nitrogen atmosphere, growth time be 1 point 30 seconds, thickness is that 4nm, In content is about 18%, grows green glow 105 layers；
8) repeat the 6th step to the 7th step 3 circulation, form the green quantum well structure in 3 cycles;
9) reaction chamber temperature rising to 840 DEG C, pressure is adjusted to 300mbar, passes into nitrogen, triethyl-gallium (360ml/min) ammonia, and growth GaN quantum is built in a nitrogen atmosphere, grows the GaN protective layer 106 layers of 1 minute；
10) after following 106 closely, growth, rises to 900 DEG C by temperature, and pressure is adjusted to 200mbar, passes into nitrogen, triethyl-gallium (360ml/min) ammonia, inserts Mg impurity, and the doping content of Mg is 1 × 1019cm-3.Growth time be 1 point 30 seconds, this layer is 107P type GaN layer, and these 101 107 layers is the first segment of this more piece LED structure, and first segment luminescence is green glow；
11) repeat and carry out the 6th step to the 10th step 1 circulation, form the second section green light LED structure that wavelength is 525nm；
12) reaction chamber temperature being down to 840 DEG C, pressure is adjusted to 300mbar, passes into nitrogen, triethyl-gallium (360ml/min) ammonia, and growth GaN quantum is built in a nitrogen atmosphere, mixes Si impurity, and doping content is 1 × 1018cm-3.Growth time be 2 points 30 seconds, thickness is 12nm, grows 104 layers；
13) reaction chamber temperature is down to 760 DEG C, pressure maintains 300mbar, pass into nitrogen, triethyl-gallium (120ml/min), trimethyl indium (400ml/min) and ammonia, growth InGaN SQW in a nitrogen atmosphere, growth time be 1 point 30 seconds, thickness is that 3nm, In content is about 10%, grows blue light 105 layers；
14) reaction chamber temperature rising to 840 DEG C, pressure is adjusted to 300mbar, passes into nitrogen, triethyl-gallium (360ml/min) ammonia, and growth GaN quantum is built in a nitrogen atmosphere, grows the GaN protective layer 106 layers of 1 minute；
15) after following 106 closely, growth, rises to 900 DEG C by temperature, and pressure is adjusted to 200mbar, passes into nitrogen, triethyl-gallium (360ml/min) ammonia, inserts Mg impurity, and the doping content of Mg is 1 × 1019cm-3.Growth time be 1 point 30 seconds, this layer is 107P type GaN layer, and these 101 107 layers is Section three of this more piece LED structure, and Section of three luminescence is blue light；
16) repeat the 12nd step to the 15th step 3 circulation, form the first segment blue light quantum well structure in 3 cycles；
17) repeat and carry out the 12nd step to the 16th step 1 circulation, form the second section blue light LED structure that wavelength is 455nm；
18) reaction chamber temperature being down to 840 DEG C, pressure is adjusted to 300mbar, passes into nitrogen, triethyl-gallium (360ml/min) ammonia, and growth GaN quantum is built in a nitrogen atmosphere, mixes Si impurity, and doping content is 1 × 1018cm-3.Growth time be 2 points 30 seconds, thickness is 12nm, grows 104 layers；
19) reaction chamber temperature is down to 800 DEG C, pressure maintains 300mbar, pass into nitrogen, triethyl-gallium (90ml/min), trimethyl indium (400ml/min) and ammonia, growth InGaN SQW in a nitrogen atmosphere, growth time be 1 point 30 seconds, thickness is that 2.3nm, In content is about 5%, grows purple light 105 layers；
20) reaction chamber temperature rising to 840 DEG C, pressure is adjusted to 300mbar, passes into nitrogen, triethyl-gallium (360ml/min) ammonia, and growth GaN quantum is built in a nitrogen atmosphere, grows the GaN protective layer 106 layers of 1 minute；
21) after following 106 closely, growth, rises to 900 DEG C by temperature, and pressure is adjusted to 200mbar, passes into nitrogen, triethyl-gallium (360ml/min) ammonia, inserts Mg impurity, and the doping content of Mg is 1 × 1019cm-3.Growth time be 1 point 30 seconds, this layer is 107P type GaN layer, and these 101 107 layers is Section five of this more piece LED structure, and Section of five luminescence is purple light；
22) repeat the 18th step to the 21st step 4 circulation, form the first segment purple light quantum well structure in 4 cycles；
23) repeating and carry out the 18th step to the 22nd step 2 circulation, form second and third joint blue light LED structure that wavelength is 455nm, the thickness of last P type GaN is 350nm, and doping content is 2 × 1019cm-3；
24) it is annealed processing to this 7 joint LED, it is possible to obtain 300x300 μm2The chip of size, under 20mA, voltage is less than 3.2V, it is possible to be simultaneously emitted by the purple light of 380nm, 455nm and 525nm wave band, blue light and green glow, forms green/blue/purple three coloured light combination more piece LED.
One of ordinary skill in the art will appreciate that: all or part of step realizing above-mentioned each embodiment of the method can be completed by the hardware that programmed instruction is relevant.Aforesaid program can be stored in a computer read/write memory medium.This program upon execution, performs to include the step of above-mentioned each embodiment of the method；And aforesaid storage medium includes: the various media that can store program code such as ROM, RAM, magnetic disc or CDs.
Last it is noted that various embodiments above is only in order to illustrate technical scheme, it is not intended to limit；Although the present invention being described in detail with reference to foregoing embodiments, it will be understood by those within the art that: the technical scheme described in foregoing embodiments still can be modified by it, or wherein some or all of technical characteristic is carried out equivalent replacement；And these amendments or replacement, do not make the essence of appropriate technical solution depart from the scope of various embodiments of the present invention technical scheme.

Claims (8)

1. the structural design of the LED of pitch width spectrum more than one kind and manufacture method, it is characterised in that including:
(1) on substrate, pass into source metal and V race reactant in advance, by pyrolytic, form one layer of cushion over the substrate；
(2) improve growth temperature, described cushion grows the GaN layer of undoped, and in the GaN layer of described undoped, grows one layer of N-type GaN layer；
(3) temperature being adjusted to the temperature of applicable grown quantum trap, grows GaN/InGaN multicycle quantum well structure in described N-type GaN layer, the thickness of GaN/InGaN described in each cycle is 5～30nm；Wherein, the trap of each described SQW is wide is 2～5nm, and building wide is 5～25nm, and periodicity is 1～50；
(4) growing one layer of P type GaN on described GaN/InGaN multicycle quantum well structure, the thickness of described P type GaN is 0～30nm, and doping content is 1x1017～1x1020cm-3；
(5) (3) and (4) are repeated, to form the more piece LED structure that multiple [GaN/InGaN multicycle SQW+P type GaN layer] combines；Wherein, the thickness of the described P type GaN layer of last layer is 50～500nm, and doping content is 1x1017～1x1020cm-3。
2. the structural design of many pitch widths spectrum LED according to claim 1 and manufacture method, it is characterised in that: described cushion is the one in GaN, InN, AlN, or at least two composition mixture, its thickness is 0～100nm.
3. the structural design of many pitch widths spectrum LED according to claim 1 and manufacture method, it is characterised in that: described substrate is the one in sapphire, silicon, carborundum, glass, copper, nickel, chromium.
4. the structural design of many pitch widths spectrum LED according to claim 1 and manufacture method, it is characterised in that: the trap width of the described quantum well structure often saving each cycle in described LED structure is identical；And the well depth that often saves the described quantum well structure in each cycle in described LED structure is identical.
5. the structural design of many pitch widths spectrum LED according to claim 1 and manufacture method, it is characterised in that: often save luminescent spectrum corresponding to described LED structure and contain all wave bands from purple light to gold-tinted.
6. the structural design of many pitch widths spectrum LED according to claim 1 and manufacture method, it is characterised in that: the joint number of described many pitch widths spectrum LED structure is 2～50.
7. the structural design of many pitch widths spectrum LED according to claim 1 and manufacture method, it is characterised in that: the dopant forming described N-type GaN layer is one or more materials in silicon, carbon, lead, oxygen, sulfur.
8. the structural design of many pitch widths spectrum LED according to claim 1 and manufacture method, it is characterised in that: the dopant forming described P type GaN layer is one or more materials in Be, Mg, Ca, Sr.
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