CN106935690B - Epitaxial structure for improving light output power of ultraviolet LED - Google Patents
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- 230000000903 blocking effect Effects 0.000 claims abstract description 31
- 229910002704 AlGaN Inorganic materials 0.000 claims abstract description 25
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 238000003780 insertion Methods 0.000 claims abstract description 11
- 230000037431 insertion Effects 0.000 claims abstract description 11
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 7
- 239000010980 sapphire Substances 0.000 claims abstract description 7
- 239000011777 magnesium Substances 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 13
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical group N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 11
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 8
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims description 5
- 229910000077 silane Inorganic materials 0.000 claims description 5
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 4
- 239000012159 carrier gas Substances 0.000 claims description 4
- 229910052749 magnesium Inorganic materials 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical group C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 claims description 4
- 238000002360 preparation method Methods 0.000 claims description 3
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical group C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 claims description 3
- 239000013078 crystal Substances 0.000 abstract description 7
- 239000000463 material Substances 0.000 description 5
- 230000004888 barrier function Effects 0.000 description 3
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 238000004887 air purification Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 239000013049 sediment Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
- H01L33/145—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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Abstract
The invention discloses an epitaxial structure for improving the light output power of an ultraviolet LED, which comprises a substrate, a GaN buffer layer, an undoped GaN layer, a doped N-type GaN layer, an AlGaN/GaN multi-quantum well structure, an insertion layer, an electron blocking layer EBL and a P-type GaN layer which are sequentially arranged from bottom to top, wherein the substrate adopts a sapphire substrate, the thickness of the GaN buffer layer is 20-25nm, the growth temperature is 530-550 ℃, the GaN buffer layer is recrystallized at 1050 ℃ for 6 minutes, the thickness of the undoped GaN layer is 2.0-2.5 mu m, the growth temperature is 1050 ℃, the thickness of the doped N-type GaN layer is 2.5-3.0 mu m, the Si doping concentration is 5x10 18cm‑3 ℃, the growth temperature is 1050 ℃, and the multi-quantum well AlGaN/GaN structure is formed by alternately growing a multi-quantum well AlGaN layer and a multi-quantum well GaN layer according to 6 cycles. According to the invention, the crystal quality of the ultraviolet LED chip is improved, the electron blocking effect of the electron blocking layer is optimized, and the electron leakage is reduced, so that the efficiency drop of the ultraviolet LED device is improved, and the light output power is improved.
Description
Technical Field
The invention belongs to the field of ultraviolet LEDs, and particularly relates to a novel epitaxial structure which is designed to improve the crystal quality of an ultraviolet LED chip, optimize the electron blocking effect of an electron blocking layer and reduce electron leakage, thereby improving the efficiency drop of an ultraviolet LED device and improving the light output power.
Background
The UV-A region in the ultraviolet emission band has an emission wavelength typically between 320nm and 400 nm. Ultraviolet light in this band has applications in many areas, such as ultraviolet curing, coin discrimination, artificial sunlight, air purification, and lighting. The production process level during the current stage of ultraviolet LEDs has a plurality of problems, in particular UV-B with the wavelength range of 275nm-320nm and UV-C with the wavelength range of 100nm-275nm, and the process is higher and the production difficulty is higher. Therefore, ultraviolet LEDs in the UV-A band, particularly near ultraviolet LEDs in the wavelength range of 360nm-400nm, are more attractive for research. The quantum well active region of the ultraviolet LED in the wave band is based on GaN and InGaN materials, and the n-type and p-type regions are based on AlGaN materials lower than Al components, so that the growth process of the ultraviolet LED is closer to that of a mature blue LED process, and meanwhile, the ultraviolet LED has higher luminous efficiency and better reliability.
For the research of InGaN-based blue LEDs, there are many technical methods for optimizing the performance of the LED. Therefore, solving the problems in the near ultraviolet AlGaN-based LEDs by referencing a similar method is a viable solution. For example, in blue LEDs, one reduces active area electron leakage by introducing an electron blocking layer. In the ultraviolet LED, in order to achieve an ideal electron blocking effect, the requirement on the Al component in the AlGaN material in the electron blocking layer is high, so that the p-type doping in the growth process is difficult, and the crystal quality of the epitaxial layer is influenced. According to the invention, on the premise of not improving the Al component in the EBL, the electron blocking effect of the EBL is improved by inserting a layer of undoped AlGaN, so that the luminous efficiency of the LED is improved.
Disclosure of Invention
The invention aims to provide an epitaxial structure for improving the light output power of an ultraviolet LED, and aims to improve the crystal quality of an ultraviolet LED chip, optimize the electron blocking effect of an electron blocking layer and reduce electron leakage, so that the problem of efficiency reduction of an ultraviolet LED device is solved, and the light output power is improved.
The invention adopts the technical scheme that: an epitaxial structure for improving the light output power of an ultraviolet LED comprises a substrate, a GaN buffer layer, an undoped GaN layer, a doped N-type GaN layer, an AlGaN/GaN multi-quantum well structure, an insertion layer, an electron blocking layer EBL and a P-type GaN layer which are sequentially arranged from bottom to top.
Further, the substrate is a sapphire substrate.
Further, the GaN buffer layer has a thickness of 20-25nm, a growth temperature of 530-550 ℃, and is recrystallized at 1050 ℃ for 6 minutes.
Further, the thickness of the undoped GaN layer is 2.0-2.5 μm, and the growth temperature is 1050 ℃.
Further, the thickness of the doped N-type GaN layer is 2.5-3.0 μm, wherein the doping concentration of Si is 5x10 18cm-3, and the growth temperature is 1050 ℃.
Furthermore, the multi-quantum well AlGaN/GaN structure is formed by alternately growing a multi-quantum well AlGaN layer and a multi-quantum well GaN layer according to 6 periods, wherein the component proportion of each layer of multi-quantum well AlGaN is Al 0.15Ga0.85 N, and the thickness is 8-10nm; each layer of multi-quantum well GaN is 2-3nm thick, and the growth temperature is 1020 ℃.
Further, the insertion layer is undoped Al 0.25Ga0.75 N, the thickness is 4-5nm, and the growth temperature is 990 ℃.
Further, the electron blocking layer EBL is a P-type Al 0.2Ga0.8 N layer with the thickness of 20-25nm, wherein the doping concentration of Mg is 5x10 17cm-3.
Further, the thickness of the P-type GaN layer is 80-100nm, the growth temperature is 990 ℃, and the P-type GaN layer is annealed at 700 ℃ for 20-25 minutes.
The method for manufacturing the epitaxial structure for improving the light output power of the ultraviolet LED is characterized in that a preparation instrument is MOCVD, a Ga source is trimethylgallium TMGa, an Al source is trimethylaluminum TMAL, a nitrogen source is ammonia NH 3, a carrier gas is H 2, and N-type and P-type doping sources are silane SiH 4 and magnesium Cp 2 Mg respectively.
Compared with the prior art, the invention has the beneficial effects that:
The Al component of the electron blocking layer material is improved, so that the growth difficulty of the p-type doped layer is easy to increase, and the poor crystal quality is presented. In the invention, by inserting undoped Al 0.25Ga0.75 N and making the thickness thinner to 5nm, crystals with better quality can be grown in a state of realizing better electron blocking effect.
According to the invention, as the Al 0.25Ga0.75 N insertion layer is introduced, the downward inclination of the EBL energy band can be effectively restrained, and the energy band is lifted, so that the barrier width of the electron blocking layer EBL can be increased, and the electron blocking effect of the structure is enhanced.
In the invention, the optimized structure of the design has Al 0.25Ga0.75 N insertion layer with Al component higher than EBL electron blocking layer, thus effectively improving the barrier height of the EBL electron blocking layer, reducing electron leakage and presenting superior luminescence performance.
According to the invention, the electron blocking efficiency of the electron blocking layer EBL is improved due to the insertion layer Al 0.25Ga0.75 N, the electron leakage is effectively reduced, more carriers are subjected to radiation recombination in the active region, and the higher radiation recombination rate is presented.
Drawings
Fig. 1 is a schematic structural diagram of an epitaxial structure for improving the light output power of an ultraviolet LED according to the present invention.
Detailed Description
The technical scheme of the invention is further described below with reference to specific embodiments.
The mature application of the blue light LED can solve the problem of the near ultraviolet AlGaN-based LED by referring to a similar method. For example, in blue LEDs, one reduces active area electron leakage by introducing an electron blocking layer. In the ultraviolet LED, in order to achieve an ideal electron blocking effect, the requirement on the Al component in the AlGaN material in the electron blocking layer is high, so that the p-type doping in the growth process is difficult, and the crystal quality of the epitaxial layer is influenced. In the invention, on the premise of not improving the Al component in the EBL, the electron blocking effect of the EBL is improved by inserting a layer of undoped AlGaN, so that the luminous efficiency of the LED is improved.
As shown in fig. 1, the invention provides an epitaxial structure for improving the light output power of an ultraviolet LED, which comprises a substrate 1, a GaN buffer layer 2, an undoped GaN layer 3, a doped N-type GaN layer 4, an algan/GaN multiple quantum well structure 5, an insertion layer 6, an electron blocking layer EBL7 and a P-type GaN layer 8 which are sequentially arranged from bottom to top. The substrate 1 is a sapphire substrate, the thickness of the GaN buffer layer 2 is 20-25nm, the growth temperature is 530-550 ℃, and the GaN buffer layer 2 is recrystallized at 1050 ℃ for 6 minutes; the thickness of the undoped GaN layer 3 is 2.0-2.5 mu m, the growth temperature is 1050 ℃, the thickness of the doped N-type GaN layer 4 is 2.5-3.0 mu m, the doping concentration of Si is 5x10 18cm-3, and the growth temperature is 1050 ℃.
In the specific technical scheme of the invention, the multi-quantum well AlGaN/GaN structure is formed by alternately growing a multi-quantum well AlGaN layer and a multi-quantum well GaN layer according to 6 periods, wherein the component proportion of each layer of multi-quantum well AlGaN is Al 0.15Ga0.85 N, and the thickness is 8-10nm; each layer of multi-quantum well GaN is 2-3nm thick, the growth temperature is 1020 ℃, the insertion layer 6 is undoped Al 0.25Ga0.75 N, the thickness is 4-5nm, the growth temperature is 990 ℃, the electron blocking layer EBL7 is a P-type Al 0.2Ga0.8 N layer, the thickness is 20-25nm, the Mg doping concentration is 5x10 17cm-3, the thickness of the P-type GaN layer 8 is 80-100nm, the Mg doping concentration is 5x10 17cm-3, the growth temperature is 990 ℃, and the annealing is performed for 20-25 minutes at 700 ℃.
In a specific technical scheme of the invention, the method for manufacturing the epitaxial structure for improving the light output power of the ultraviolet LED adopts MOCVD as a preparation instrument, adopts trimethylgallium TMGa as a Ga source, trimethylaluminum TMAL as an Al source, ammonia gas NH 3 as a nitrogen source, H 2 as a carrier gas, and silane SiH 4 and magnesium Cp 2 Mg as N-type and P-type doping sources respectively.
Example 1
As shown in fig. 1, an epitaxial structure for improving the light output power of an ultraviolet LED includes the following structures from bottom to top: the GaN/GaN multi-quantum well structure comprises a substrate 1, a GaN buffer layer 2, an undoped GaN layer 3, a doped N-type GaN layer 4, an AlGaN/GaN multi-quantum well structure 5, an insertion layer 6, an electron blocking layer EBL7 and a P-type GaN layer 8.
As shown in fig. 1, the substrate 1 is a sapphire substrate. A 25nm GaN buffer layer 2 was grown on the sapphire substrate. Next, a 2.5 μm undoped u-GaN layer is grown on the GaN buffer layer 2. Then, an N-type GaN layer having a thickness of 3 μm was grown on the 2.5 μm undoped u-GaN layer, wherein the Si doping concentration was 5×10 18cm-3. Subsequently, an AlGaN/GaN multiple quantum well structure 5 is grown on the N-type GaN layer, and the specific composition is an Al 0.15Ga0.85 N/GaN multiple quantum well structure with 6 periods alternating, wherein the thickness of each layer of Al 0.15Ga0.85 N is 10nm, and the thickness of each layer of GaN is 3nm. Next, an undoped u-Al 0.25Ga0.75 N layer is grown on the AlGaN/GaN multiple quantum well structure 5, with a thickness of 5nm. Subsequently, a P-type P-Al 0.2Ga0.8 N layer was grown over the undoped u-Al 0.25Ga0.75 N layer to a thickness of 20nm, with a Mg doping concentration of 5x10 17cm-3. Then, a P-type GaN layer 8 having a thickness of 100nm was grown on the P-type P-Al 0.2Ga0.8 N layer, wherein the Mg doping concentration was 5x10 17cm-3.
As a preferred implementation manner of this example, the above-mentioned LED epitaxial wafer structure is prepared by using a growth apparatus of MOCVD, and the specific growth process is as follows:
First, a sapphire substrate is loaded into a reaction chamber. Then, high-temperature burning the sediment by introducing high-purity hydrogen at 1090 ℃. Next, a low temperature GaN buffer layer 2 was grown at 530℃with a thickness of about 25nm by passing through a Ga source and ammonia gas. Then, the temperature was raised to 1050℃and kept constant for about 6 minutes, so that the buffer layer was recrystallized. Subsequently, undoped GaN (u-GaN) was grown to a thickness of about 2.5 μm by introducing Ga source and ammonia gas at 1050 ℃. Next, an N-type GaN layer was grown at 1050℃by introducing a Ga source, ammonia and silane to a thickness of about 3 μm, wherein the Si doping concentration was 5X10 18cm-3. Then, the temperature is reduced to 1020 ℃ and Al source is introduced to grow Al 0.15Ga0.85 N quantum barriers with the thickness of 10 nm. Next, a 3nm thick GaN quantum well was grown at 1020 ℃. The first two steps are repeated to co-grow an AlGaN/GaN multiple quantum well structure 5 of 6 periods, wherein the first five are doped with Si and the last one is not doped with Si. Then, the temperature is reduced to 990 ℃, and an Al source, a Ga source and ammonia gas are introduced to grow undoped u-Al 0.25Ga0.75 N with the thickness of 5nm. Then, al source, ga source, ammonia gas and Mg source are introduced to grow a P-type Al 0.2Ga0.8 N layer, namely an electron blocking layer EBL7, with the thickness of about 20nm, wherein the doping concentration of Mg is 5x10 17cm-3. Then, at 990 ℃, an Al source Ga source, ammonia gas and an Mg source were introduced to grow a P-type GaN layer 8 having a thickness of about 100nm, wherein the Mg doping concentration was 5×10 17cm-3. Finally, annealing is carried out at 700 ℃ for 20 minutes, and the P-type layer with high hole concentration is obtained.
The growth equipment adopted in the growth procedure is MOCVD. The Ga source is TMGa, the Al source is trimethylaluminum, the nitrogen source is NH 3, the carrier gas is H 2, and the N-type and P-type doping sources are silane SiH 4 and magnesium Cp 2 Mg respectively.
It should be noted that the above description is not a limitation of the technical solution of the present invention, and any obvious substitution is within the protection scope of the present invention without departing from the inventive concept of the present invention.
Claims (3)
1. An epitaxial structure for improving light output power of an ultraviolet LED, which is characterized in that: the epitaxial structure comprises a substrate, a GaN buffer layer, an undoped GaN layer, an N-doped GaN layer, an AlGaN/GaN multi-quantum well structure, an insertion layer, an electron blocking layer EBL and a P-type GaN layer which are sequentially arranged from bottom to top;
The thickness of the GaN buffer layer is 20-25nm, the growth temperature is 530-550 ℃, and the GaN buffer layer is recrystallized at 1050 ℃ for 6 minutes;
The thickness of the undoped GaN layer is 2.0-2.5 mu m, and the growth temperature is 1050 ℃;
The thickness of the doped N-type GaN layer is 2.5-3.0 mu m, wherein the doping concentration of Si is 5x10 18cm-3, and the growth temperature is 1050 ℃;
The multi-quantum well AlGaN/GaN structure is formed by alternately growing a multi-quantum well AlGaN layer and a multi-quantum well GaN layer according to 6 periods, wherein the component proportion of each layer of multi-quantum well AlGaN is Al 0.15Ga0.85 N, and the thickness is 8-10nm; each layer of multi-quantum well GaN is 2-3nm thick, and the growth temperature is 1020 ℃;
the insertion layer is undoped Al 0.25Ga0.75 N, the thickness is 4-5nm, and the growth temperature is 990 ℃;
the electron blocking layer EBL is a P-type Al 0.2Ga0.8 N layer with the thickness of 20-25nm, wherein the doping concentration of Mg is 5x10 17cm-3;
The thickness of the P-type GaN layer is 80-100nm, the growth temperature is 990 ℃, and the P-type GaN layer is annealed at 700 ℃ for 20-25 minutes.
2. An epitaxial structure for increasing the light output power of an ultraviolet LED according to claim 1, wherein: the substrate is a sapphire substrate.
3. The method for manufacturing the epitaxial structure for improving the light output power of the ultraviolet LED according to claim 1 or 2, wherein the preparation instrument is MOCVD, the Ga source is trimethylgallium TMGa, the Al source is trimethylaluminum TMAL, the nitrogen source is ammonia gas NH 3, the carrier gas is H 2, and the N-type doping source and the P-type doping source are silane SiH 4 and magnesium Cp 2 Mg respectively.
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| CN107507891B (en) * | 2017-08-10 | 2019-02-15 | 湘能华磊光电股份有限公司 | Improve the LED epitaxial growth method of internal quantum efficiency |
| CN108630790A (en) * | 2018-05-24 | 2018-10-09 | 华南师范大学 | A kind of deep ultraviolet LED based on AlGaN |
| CN109860351B (en) * | 2018-11-14 | 2021-10-08 | 华灿光电（浙江）有限公司 | GaN-based light emitting diode epitaxial wafer and preparation method thereof |
| CN109585622A (en) * | 2018-12-03 | 2019-04-05 | 广东工业大学 | A kind of ultraviolet LED epitaxial structure and its growing method |
| CN113206175B (en) * | 2021-03-19 | 2023-10-13 | 华灿光电（浙江）有限公司 | Light-emitting diode epitaxial wafer and preparation method thereof |
| CN114203327A (en) * | 2021-12-13 | 2022-03-18 | 中国核动力研究设计院 | P-i-n junction, preparation method, diode and beta nuclear battery |
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