CN106935690A - A kind of epitaxial structure for improving ultraviolet LED optical output power - Google Patents
A kind of epitaxial structure for improving ultraviolet LED optical output power Download PDFInfo
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- 230000003287 optical effect Effects 0.000 title claims abstract description 23
- 229910002704 AlGaN Inorganic materials 0.000 claims abstract description 26
- 230000004888 barrier function Effects 0.000 claims abstract description 22
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 7
- 239000010980 sapphire Substances 0.000 claims abstract description 7
- 239000011777 magnesium Substances 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 10
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 8
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 5
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims description 5
- 229910000077 silane Inorganic materials 0.000 claims description 5
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 4
- 239000012159 carrier gas Substances 0.000 claims description 4
- 229910052749 magnesium Inorganic materials 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 claims description 4
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 claims description 4
- XKMRRTOUMJRJIA-UHFFFAOYSA-N ammonia nh3 Chemical group N.N XKMRRTOUMJRJIA-UHFFFAOYSA-N 0.000 claims description 3
- 238000002360 preparation method Methods 0.000 claims description 2
- 230000000903 blocking effect Effects 0.000 abstract description 11
- 239000013078 crystal Substances 0.000 abstract description 7
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 13
- 229910021529 ammonia Inorganic materials 0.000 description 6
- 241001025261 Neoraja caerulea Species 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- 238000005457 optimization Methods 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 230000031068 symbiosis, encompassing mutualism through parasitism Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
- H01L33/145—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
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Abstract
The invention discloses a kind of epitaxial structure for improving ultraviolet LED optical output power, the epitaxial structure includes the substrate for setting gradually from bottom to top, GaN cushions, the GaN layer of undoped p, doped N-type GaN layer, AlGaN/GaN multi-quantum pit structures, insert layer, electronic barrier layer EBL, p-type GaN layer, the substrate uses Sapphire Substrate, the GaN buffer layer thicknesses are 20 25nm, growth temperature is 530 550 DEG C, and recrystallize 6 minutes GaN cushions in 1050 DEG C of constant temperature, the GaN layer thickness of the undoped p is 2.0 2.5 μm, growth temperature is 1050 DEG C, the thickness of the doped N-type GaN layer is 2.5 3.0 μm, wherein Si doping concentrations are 5x1018cm‑3, growth temperature is 1050 DEG C, and the MQW AlGaN/GaN structures are formed by MQW AlGaN layer and MQW GaN layer by the alternating growth in 6 cycles.Crystal mass by improving UV LED chip of the invention, optimizes the electronic blocking effect of electronic barrier layer, reduces electronics leakage, so that the efficiency for improving uv-LED device declines, raising optical output power.
Description
Technical field
The invention belongs to ultraviolet LED field, specifically ultraviolet LED core is improved by designing a kind of new epitaxial structure
The crystal mass of piece, optimizes the electronic blocking effect of electronic barrier layer, electronics leakage is reduced, so as to improve uv-LED device
Efficiency declines, and improves optical output power.
Background technology
UV-A regions in ultra-violet light-emitting wave band, its emission wavelength is generally between 320nm-400nm.This wave band it is ultraviolet
Light has application at many aspects, in terms of such as purple requirement outer solidification, coin discrimination, artificial daylight, purification of air and illumination.It is existing
There is the UV-B of problems, particularly wave-length coverage in 275nm-320nm in the production technology level during stage ultraviolet LED,
Wave-length coverage is in the UV-C of 100nm-275nm, and its technique is higher, and production difficulty is bigger.Therefore, the ultraviolet LED of UV-A wave bands, it is special
It is not wave-length coverage more attractive for research in the near ultraviolet band LED of 360nm-400nm.The ultraviolet LED of this wave band,
Its Quantum well active district is to be based on GaN, InGaN material, and N-shaped, p-type area are based on the AlGaN material less than Al components, give birth to it
The closer ripe blue-ray LED technique of technique long, while, it may have luminous efficiency and more preferable reliability higher.
For the research of InGaN base blue-ray LEDs, the technical method of existing many optimization LED performances.Therefore, by using for reference
Similar method is solved the problems, such as near ultraviolet AlGaN bases LED, is a kind of feasible scheme.For example in blue-ray LED, people
The leakage of active area electronics is reduced by introducing electronic barrier layer.And in ultraviolet LED, want to reach preferable electronic blocking effect
Really, the requirement to Al components in AlGaN material in electronic barrier layer is higher, and the p-type doping being easily caused in growth course is more stranded
Difficulty, influences epitaxial layer crystal mass.In the present invention, we by not improving in EBL on the premise of Al components, by inserting one layer
The AlGaN of undoped p improves the electronic blocking effect of EBL, and then improves the luminous efficiency of LED.
The content of the invention
It is an object of the invention to propose a kind of epitaxial structure for improving ultraviolet LED optical output power, it is therefore intended that improve
The crystal mass of UV LED chip, optimizes the electronic blocking effect of electronic barrier layer, electronics leakage is reduced, so as to improve ultraviolet
The efficiency of LED component declines problem, improves optical output power.
The technical solution adopted in the present invention：A kind of epitaxial structure for improving ultraviolet LED optical output power, the epitaxy junction
Structure includes the substrate for setting gradually from bottom to top, and GaN cushions, the GaN layer of undoped p, doped N-type GaN layer, AlGaN/GaN is more
Quantum well structure, insert layer, electronic barrier layer EBL, p-type GaN layer.
Further, the substrate uses Sapphire Substrate.
Further, the GaN buffer layer thicknesses are 20-25nm, and growth temperature is 530-550 DEG C, and in 1050 DEG C of perseverances
Temperature recrystallizes 6 minutes GaN cushions.
Further, the GaN layer thickness of the undoped p is 2.0-2.5 μm, and growth temperature is 1050 DEG C.
Further, the thickness of the doped N-type GaN layer is 2.5-3.0 μm, and wherein Si doping concentrations are 5x1018cm-3,
Growth temperature is 1050 DEG C.
Further, the MQW AlGaN/GaN structures press 6 by MQW AlGaN layer and MQW GaN layer
The alternating growth in individual cycle is formed, wherein every layer of MQW AlGaN component ratio is Al0.15Ga0.85N, thickness is 8-10nm；
Every layer of MQW GaN is 2-3nm thick, and growth temperature is 1020 DEG C.
Further, the insert layer is undoped p Al0.25Ga0.75N, thickness is 4-5nm, and growth temperature is 990 DEG C.
Further, the electronic barrier layer EBL is p-type Al0.2Ga0.8N layers, thickness is 20-25nm, and wherein Mg doping is dense
It is 5x10 to spend17cm-3。
Further, the thickness of the p-type GaN layer is 80-100nm, and growth temperature is 990 DEG C, and is annealed at 700 DEG C
20-25 minutes.
A kind of method of the epitaxial structure for improving ultraviolet LED optical output power of manufacture, it is characterised in that:Used preparing instrument
Device is MOCVD, and the Ga sources for being used are trimethyl gallium TMGa, and Al sources are trimethyl aluminium TMAl, and nitrogen source is ammonia NH3, carrier gas
It is H2, N-type and p-type doped source are respectively silane SiH4Magnesium Cp luxuriant with two2Mg。
Compared with prior art, the beneficial effects of the invention are as follows：
Due to improving the Al components of electronic blocking layer material, it is easily caused p-type doped layer growth difficulty and increases, presents poor
Crystal mass.In the present invention, by inserting the Al of undoped p0.25Ga0.75N, and thinner thickness is 5nm, can realized preferably
In the state of electronic blocking effect, the preferable crystal of mass is grown.
Due to introducing one layer of Al in the present invention0.25Ga0.75N insert layers, can effectively suppress EBL can raise energy with downward-sloping
Band, thus the barrier width of electronic barrier layer EBL can be increased, strengthen the electronic blocking effect of the structure.
In the present invention, the optimization structure of this design, due to there is Al0.25Ga0.75N insert layers, its Al component is higher than EBL electricity
Sub- barrier layer, can effectively improve the barrier height of EBL electronic barrier layers, reduce electronics leakage, and advantageous luminescent properties are presented.
The present invention is due to insert layer Al0.25Ga0.75N causes that the electronic blocking efficiency of electronic barrier layer EBL is improved, effectively
Reduce electronics leakage so that more carriers occur radiation recombination in active area, and rate of radiative recombination higher is presented.
Brief description of the drawings
Fig. 1 is a kind of structural representation of the epitaxial structure for improving ultraviolet LED optical output power of the present invention.
Specific embodiment
Technical scheme is further illustrated with reference to specific embodiment.
The ripe application of blue-ray LED, the method that can be similar to by reference is solved the problems, such as near ultraviolet AlGaN bases LED.Example
Such as in blue-ray LED, people reduce the leakage of active area electronics by introducing electronic barrier layer.And in ultraviolet LED, want to reach
To preferable electronic blocking effect, the requirement to Al components in AlGaN material in electronic barrier layer is higher, is easily caused growth course
In p-type doping it is more difficult, influence epitaxial layer crystal mass.In the present invention, we are by the Al components in EBL is not improved
Under the premise of, the electronic blocking effect of EBL is improved by inserting one layer of AlGaN of undoped p, and then improve the luminous effect of LED
Rate.
As shown in figure 1, the present invention provides a kind of epitaxial structure for improving ultraviolet LED optical output power, the epitaxial structure
Include the substrate 1 for setting gradually, GaN cushions 2, the GaN layer 3 of undoped p, doped N-type GaN layer 4, AlGaN/GaN from bottom to top
Multi-quantum pit structure 5, insert layer 6, electronic barrier layer EBL7, p-type GaN layer 8.The substrate 1 uses Sapphire Substrate, described
The thickness of GaN cushions 2 is 20-25nm, and growth temperature is 530-550 DEG C, and makes within 6 minutes the weight of GaN cushions 2 in 1050 DEG C of constant temperature
Crystallization；The thickness of GaN layer 3 of the undoped p is 2.0-2.5 μm, and growth temperature is 1050 DEG C, the thickness of the doped N-type GaN layer 4
It is 2.5-3.0 μm to spend, and wherein Si doping concentrations are 5x1018cm-3, growth temperature is 1050 DEG C.
In concrete technical scheme of the invention, the MQW AlGaN/GaN structures by MQW AlGaN layer and
MQW GaN layer is formed by the alternating growth in 6 cycles, wherein every layer of MQW AlGaN component ratio is
Al0.15Ga0.85N, thickness is 8-10nm；Every layer of MQW GaN is 2-3nm thick, and growth temperature is 1020 DEG C, the insert layer 6
It is undoped p Al0.25Ga0.75N, thickness is 4-5nm, and growth temperature is 990 DEG C, and the electronic barrier layer EBL7 is p-type
Al0.2Ga0.8N layers, thickness is 20-25nm, and wherein Mg doping concentrations are 5x1017cm-3, the thickness of the p-type GaN layer 8 is 80-
100nm, Mg doping concentration are 5x1017cm-3, growth temperature is 990 DEG C, and is annealed 20-25 minutes at 700 DEG C.
In concrete technical scheme of the invention, a kind of epitaxy junction of the described raising ultraviolet LED optical output power of manufacture
The method of structure, it is MOCVD to use apparatus for preparation, and the Ga sources for being used are trimethyl gallium TMGa, and Al sources are trimethyl aluminium
TMAl, nitrogen source is ammonia NH3, carrier gas is H2, N-type and p-type doped source are respectively silane SiH4Magnesium Cp luxuriant with two2Mg。
Embodiment one
As shown in figure 1, a kind of epitaxial structure for improving ultraviolet LED optical output power, including structure from bottom to up is successively
For：Substrate 1, GaN cushions 2, the GaN layer 3 of undoped p, doped N-type GaN layer 4, AlGaN/GaN multi-quantum pit structures 5, insertion
Layer 6, electronic barrier layer EBL7, p-type GaN layer 8.
As shown in figure 1, substrate 1 is Sapphire Substrate.The GaN cushions 2 of 25nm are grown on a sapphire substrate.Then,
On GaN cushions 2, one layer 2.5 μm the u-GaN of undoped p layers is grown.Then, grown on 2.5 μm of u-GaN layers of undoped p
One layer of N-type GaN layer, its thickness is 3 μm, and wherein Si doping concentrations are 5x1018cm-3.Then, in N-type GaN layer, growth
AlGaN/GaN multi-quantum pit structures 5, concrete component is 6 cycle alternate Al0.15Ga0.85N/GaN multi-quantum pit structures, wherein
Al0.15Ga0.85N is 10nm per thickness degree, and GaN is 3nm per thickness degree.And then, on AlGaN/GaN multi-quantum pit structures 5, first
One layer of u-Al of undoped p of growth0.25Ga0.75N, thickness is 5nm.Then, in undoped p u-Al0.25Ga0.75On N layers, growth
One layer of p-type p-Al0.2Ga0.8N layers, thickness is 20nm, and wherein Mg doping concentrations are 5x1017cm-3.Then, p-type p-Al0.2Ga0.8N
On layer, one layer of p-type GaN layer 8 is grown, its thickness is 100nm, and wherein Mg doping concentrations are 5x1017cm-3。
As the preferred embodiment of the present embodiment, for above-mentioned LED structure, using this growth of MOCVD
Prepared by equipment, and its specific growth course is：
First, Sapphire Substrate is loaded into reative cell.Then, sunk to the bottom in 1090 DEG C of logical high-purity hydrogen high temperature sinterings.Then,
Lead to Ga sources and ammonia growing low temperature GaN cushions 2 at 530 DEG C, thickness is about 25nm.Then, 1050 DEG C and constant temperature 6 are warmed up to
Minute or so so that cushion is recrystallized.Then, Ga sources are passed through at 1050 DEG C and ammonia grows the GaN (u- of undoped p
GaN), thickness is about 2.5 μm.Next, being passed through Ga sources, ammonia and silane growth N-type GaN layer at 1050 DEG C, thickness is about 3
μm, wherein Si doping concentrations are 5x1018cm-3.Then, 1020 DEG C are cooled to and Al sources growth 10nm thickness is passed through
Al0.15Ga0.85N quantum are built.Then, at a temperature of 1020 DEG C, growth 3nm thick GaN SQWs.Repeat first two steps step, symbiosis
6 AlGaN/GaN multi-quantum pit structures 5 in cycle are grown, wherein first five mixes Si, last Si that undopes.And then, lower the temperature
To 990 DEG C, Al sources, Ga sources, ammonia, the u-Al of the undoped p of growth 5nm thickness are first passed through0.25Ga0.75N.Then, Al sources, Ga are passed through
Source, ammonia and Mg sources, growing P-type Al0.2Ga0.8N layers, i.e. electronic barrier layer EBL7, thickness are about 20nm, wherein Mg doping concentrations
It is 5x1017cm-3.Then, Al sources Ga sources, ammonia and Mg sources are passed through at 990 DEG C, growth P-type GaN layer 8, thickness is about 100nm,
Wherein Mg doping concentrations are 5x1017cm-3.Finally, annealed 20 minutes at 700 DEG C, obtain the P-type layer of high hole concentration.
Above-mentioned growth procedure, the growth apparatus for being used are MOCVD.The Ga sources for being used are trimethyl gallium TMGa,
Al sources are trimethyl aluminium, and nitrogen source is NH3, carrier gas is H2, N-type and p-type doped source are respectively silane SiH4Magnesium Cp luxuriant with two2Mg。
It should be noted that the above is not the restriction to art solutions of the present invention, the present invention is not being departed from
Creation conceive on the premise of, it is any it is obvious replacement within protection scope of the present invention.
Claims (10)
1. it is a kind of improve ultraviolet LED optical output power epitaxial structure, it is characterised in that：The epitaxial structure includes from bottom to top
The substrate for setting gradually, GaN cushions, the GaN layer of undoped p, doped N-type GaN layer, AlGaN/GaN multi-quantum pit structures are inserted
Enter layer, electronic barrier layer EBL, p-type GaN layer.
2. it is according to claim 1 it is a kind of improve ultraviolet LED optical output power epitaxial structure, it is characterised in that：It is described
Substrate uses Sapphire Substrate.
3. it is according to claim 1 it is a kind of improve ultraviolet LED optical output power epitaxial structure, it is characterised in that：It is described
GaN buffer layer thicknesses are 20-25nm, and growth temperature is 530-550 DEG C, and GaN cushions is tied again in 1050 DEG C of constant temperature
It is brilliant.
4. it is according to claim 1 it is a kind of improve ultraviolet LED optical output power epitaxial structure, it is characterised in that：It is described
The GaN layer thickness of undoped p is 2.0-2.5 μm, and growth temperature is 1050 DEG C.
5. it is according to claim 1 it is a kind of improve ultraviolet LED optical output power epitaxial structure, it is characterised in that：It is described
The thickness of doped N-type GaN layer is 2.5-3.0 μm, and wherein Si doping concentrations are 5x1018cm-3, growth temperature is 1050 DEG C.
6. it is according to claim 1 it is a kind of improve ultraviolet LED optical output power epitaxial structure, it is characterised in that：It is described
MQW AlGaN/GaN structures are formed by MQW AlGaN layer and MQW GaN layer by the alternating growth in 6 cycles,
Wherein every layer MQW AlGaN component ratio is Al0.15Ga0.85N, thickness is 8-10nm；Every layer of MQW GaN is 2-3nm
Thickness, growth temperature is 1020 DEG C.
7. it is according to claim 1 it is a kind of improve ultraviolet LED optical output power epitaxial structure, it is characterised in that：It is described
Insert layer is undoped p Al0.25Ga0.75N, thickness is 4-5nm, and growth temperature is 990 DEG C.
8. it is according to claim 1 it is a kind of improve ultraviolet LED optical output power epitaxial structure, it is characterised in that：It is described
Electronic barrier layer EBL is p-type Al0.2Ga0.8N layers, thickness is 20-25nm, and wherein Mg doping concentrations are 5x1017cm-3。
9. it is according to claim 1 it is a kind of improve ultraviolet LED optical output power epitaxial structure, it is characterised in that：The P
The thickness of type GaN layer is 80-100nm, and growth temperature is 990 DEG C, and is annealed 20-25 minutes at 700 DEG C.
10. the side of the epitaxial structure according to a kind of any described raising ultraviolet LED optical output powers of claims 1-9 is manufactured
Method, it is characterised in that:Used apparatus for preparation is MOCVD, and the Ga sources for being used are trimethyl gallium TMGa, and Al sources are trimethyl
Aluminium TMAl, nitrogen source is ammonia NH3, carrier gas is H2, N-type and p-type doped source are respectively silane SiH4Magnesium Cp luxuriant with two2Mg。
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Cited By (6)
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| CN107507891A (en) * | 2017-08-10 | 2017-12-22 | 湘能华磊光电股份有限公司 | Improve the LED epitaxial growth methods of internal quantum efficiency |
| CN108630790A (en) * | 2018-05-24 | 2018-10-09 | 华南师范大学 | A kind of deep ultraviolet LED based on AlGaN |
| CN109585622A (en) * | 2018-12-03 | 2019-04-05 | 广东工业大学 | A kind of ultraviolet LED epitaxial structure and its growing method |
| CN109860351A (en) * | 2018-11-14 | 2019-06-07 | 华灿光电（浙江）有限公司 | A kind of GaN base light emitting epitaxial wafer and preparation method thereof |
| CN113206175A (en) * | 2021-03-19 | 2021-08-03 | 华灿光电（浙江）有限公司 | Light emitting diode epitaxial wafer and preparation method thereof |
| CN114203327A (en) * | 2021-12-13 | 2022-03-18 | 中国核动力研究设计院 | P-i-n junction, preparation method, diode and beta nuclear battery |
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