CN207381425U - A kind of ultraviolet LED epitaxial structure - Google Patents
A kind of ultraviolet LED epitaxial structure Download PDFInfo
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- CN207381425U CN207381425U CN201720898812.1U CN201720898812U CN207381425U CN 207381425 U CN207381425 U CN 207381425U CN 201720898812 U CN201720898812 U CN 201720898812U CN 207381425 U CN207381425 U CN 207381425U
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- led epitaxial
- epitaxial structure
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Abstract
The application provides a kind of ultraviolet LED epitaxial structure, including：Substrate；Undoped buffer layer, N-type AlGaN layer, multi-quantum pit structure, superlattice structure, electronic barrier layer, p-type AlGaN layer and p-type GaN layer over the substrate is grown successively；Wherein, the superlattice structure includes at least one layer of first AlGaN layer and at least one layer of second AlGaN layer, and first AlGaN layer and described second are alternately superimposed.Due to increasing between multiple quantum wells and electronic barrier layer, superlattice structure is set, superlattice structure can effectively alleviate the strain between the last one quantum of active area base and electronic barrier layer, inhibit electronics leakage, increase hole injection efficiency, so as to improve the optical output power of ultraviolet LED and internal quantum efficiency, make it that more preferably luminescent properties be presented.
Description
Technical field
The utility model is related to field of semiconductor photoelectron technique more particularly to a kind of ultraviolet LED (Light-
Emitting Diode, light emitting diode) epitaxial structure.
Background technology
Ultraviolet (UV) LED is one kind of LED, with the traditional gas ultraviolet source such as the mercury lamp used on the market at present and xenon lamp
Compare, ultraviolet LED possess extra long life, cold light source, non-thermal radiation, service life from opening and closing times influence, energy is high, irradiation is uniform
It is efficient, without powerful advantages such as noxious materials, it is made most to be hopeful to substitute existing ultraviolet high-pressure mercury-vapor lamp, become next-generation
Ultraviolet source.
Ultraviolet LED has major application valency in medical treatment, sterilization, printing, illumination, data storage and secret communication etc.
Value.365nm has extensive basis as the most typical wavelength of UV UV-A (320nm~400nm) wave band in ultra violet applications.
It and is realized by the preparation and industrialization of high-power 365nm UV LED chips, it will provide demonstration to ultraviolet products application and make
With.For the ultraviolet space of exploiting market of deeper wave band, LED industry development is driven.
But current ultraviolet LED is in technology period of expansion, also there are problems that some are difficult to break through, as AlGaN bases are ultraviolet
The internal quantum efficiency and transmission power of LED is relatively low.
Therefore, the internal quantum efficiency and transmission power for how improving AlGaN base ultraviolet LEDs become urgent problem to be solved.
Utility model content
In view of this, the utility model provides a kind of ultraviolet LED epitaxial structure, to solve ultraviolet LED in the prior art
The problem of internal quantum efficiency and relatively low transmission power.
To achieve the above object, the utility model provides following technical solution：
A kind of ultraviolet LED epitaxial structure, including：
Substrate；
Undoped buffer layer, N-type AlGaN layer, multi-quantum pit structure, superlattices knot over the substrate is grown successively
Structure, electronic barrier layer, p-type AlGaN layer and p-type GaN layer；
Wherein, the superlattice structure includes at least one layer of first AlGaN layer and at least one layer of second AlGaN layer, described
First AlGaN layer and second AlGaN layer are alternately superimposed.
Preferably, the multi-quantum pit structure includes the Al in 6 cycles of alternating growth0.36Ga0.64N/Al0.5Ga0.5N。
Preferably, first AlGaN layer is AlxGa1-xN layers, second AlGaN layer is Al0.36Ga0.64N layers, and
First AlGaN layer is grown in the Al in the multiple quantum wells0.5Ga0.5N layer surfaces.
Preferably, the value range of the x is 0.51≤x≤0.57.
Preferably, the superlattice structure includes the Al in 7 cyclesxGa1-xN/Al0.36Ga0.64N, every layer of AlxGa1-xN layers
With every layer of Al0.36Ga0.64N layers of thickness is 1nm.
Preferably, the substrate is the Sapphire Substrate in C faces.
Preferably, the undoped buffer layer is Al0.5Ga0.5N buffer layers, thickness are 1.5 μm.
Preferably, the N-type AlGaN layer is N-type Al0.5Ga0.5N layers, thickness is 3.0 μm.
Preferably, every layer of Al in the multiple quantum wells0.36Ga0.64N thickness is 8nm, every layer of Al0.5Ga0.5N layer thickness is
3nm。
Preferably, the electronic barrier layer is the p-type Al of 10nm thickness0.65Ga0.35N layers.
Preferably, the p-type AlGaN layer is the p-type Al of 10nm thickness0.5Ga0.5N layers.
Preferably, the p-type GaN layer, thickness 100nm.
It can be seen via above technical scheme that ultraviolet LED epitaxial structure provided by the utility model, in multiple quantum wells and electricity
Increase between sub- barrier layer and superlattice structure is set, the superlattice structure can effectively alleviate the last one quantum of active area base
Strain between electronic barrier layer inhibits electronics leakage, increases hole injection efficiency, so as to improve the light output work(of ultraviolet LED
Rate and internal quantum efficiency make it that more preferably luminescent properties be presented.In addition, by reducing the last one quantum base and electronic barrier layer
Between the strain beaten the polarized electric field that is obviously reduced in active area quantum well structure, and increase electronics and hole wave functions in sky
Between on Duplication, quantum confined stark effect is reduced, so that radiation recombination occurs for active area electronics and hole
Probability increases, and then improves the internal quantum efficiency and transmission power of ultraviolet LED epitaxial structure.
Description of the drawings
It in order to illustrate the embodiment of the utility model or the technical proposal in the existing technology more clearly, below will be to embodiment
Or attached drawing needed to be used in the description of the prior art is briefly described, it should be apparent that, the accompanying drawings in the following description is only
It is the embodiment of the utility model, for those of ordinary skill in the art, without creative efforts, also
Other attached drawings can be obtained according to the attached drawing of offer.
Fig. 1 is a kind of ultraviolet LED epitaxial structure schematic diagram that the utility model embodiment provides；
Fig. 2 is a kind of structure diagram for superlattice structure that the utility model embodiment provides.
Specific embodiment
Just as described in the background section, the internal quantum efficiency of AlGaN bases ultraviolet LED and transmission power phase in the prior art
To relatively low.
The reason for AlGaN bases ultraviolet LED light source luminous efficiency is low at present mainly has：The current-carrying of high Al contents AlGaN material
Sub- injection efficiency is low, constrains the raising of ultraviolet LED internal quantum efficiency；The structural property of high Al contents AlGaN materials determines it
Light extraction efficiency is low.
Based on this, the utility model provides a kind of ultraviolet LED epitaxial structure, which is characterized in that including：
Substrate；
Undoped buffer layer, N-type AlGaN layer, multi-quantum pit structure, superlattices knot over the substrate is grown successively
Structure, electronic barrier layer, p-type AlGaN layer and p-type GaN layer；
Wherein, the superlattice structure includes the 2nd AlGaN layers of at least one layer of first AlGaN layer and at least one layer, described
First AlGaN layer and second AlGaN layer are alternately superimposed.
It is super to increase setting between multiple quantum wells and electronic barrier layer for ultraviolet LED epitaxial structure provided by the utility model
Lattice structure, the superlattice structure can effectively alleviate answering between the last one quantum of active area base and electronic barrier layer
Become, inhibit electronics leakage, increase hole injection efficiency, so as to improve the optical output power of ultraviolet LED and internal quantum efficiency, make it
More preferably luminescent properties are presented.In addition, the strain beaten between electronic barrier layer is built come significantly by reducing the last one quantum
Weaken the polarized electric field in active area quantum well structure, and increase the Duplication of electronics and hole wave functions spatially, weaken
Quantum confined stark effect so that the probability increase of radiation recombination occurs for active area electronics and hole, and then improves
The internal quantum efficiency and transmission power of ultraviolet LED epitaxial structure.
The following is a combination of the drawings in the embodiments of the present utility model, and the technical scheme in the embodiment of the utility model is carried out
It clearly and completely describes, it is clear that the described embodiments are only a part of the embodiments of the utility model rather than whole
Embodiment.Based on the embodiment in the utility model, those of ordinary skill in the art are without making creative work
All other embodiments obtained shall fall within the protection scope of the present invention.
Fig. 1 is referred to, is a kind of ultraviolet LED epitaxial structure that the utility model embodiment provides, including：Substrate 1；Successively
Undoped buffer layer 2, N-type AlGaN layer 3, multi-quantum pit structure 4, superlattice structure 5, the electronic barrier layer of growth on substrate 1
6th, p-type AlGaN layer 7 and p-type GaN layer 8；Wherein, superlattice structure 5 includes at least one layer of first AlGaN layer and at least one layer of the
Two AlGaN layers, the first AlGaN layer and the second AlGaN layer are alternately superimposed.
It should be noted that the concrete structure of superlattice structure 5 is not limited in the utility model embodiment, optionally, such as
Shown in Fig. 2, superlattice structure 5 includes at least one layer the first AlGaN layer --- AlxGa1-xN layers of a and the 2nd AlGaN of at least one layer
Layer --- Al0.36Ga0.64N layers of b, AlxGa1-xN layers of a and Al0.36Ga0.64N layers of b are alternately superimposed, wherein, the first AlGaN layer ---
AlxGa1-xN layers of a are grown in the surface of the multiple quantum wells.
The overlapping knot of the first AlGaN layer and the second AlGaN layer in superlattice structure is not limited in the utility model embodiment
The cycle of structure, optionally, the present embodiment include the Al in 7 cyclesxGa1-xN/Al0.36Ga0.64N.The utility model embodiment
In do not limit AlxGa1-xThe value range of x in N layers, optionally, the value range that utility model people obtains working as x by simulation is
During 0.51≤x≤0.57, and the thickness in superlattice structure per layer structure is identical, is 1nm, doping concentration for 5 ×
1017cm-3, growth temperature is 1020 DEG C so that the internal quantum efficiency of ultraviolet LED epitaxial structure and output power improve compared with
To be apparent.
It should be noted that it is not limited in the utility model undoped with buffer layer, N-type AlGaN layer, multiple quantum wells knot
The component of various substances in structure, electronic barrier layer, p-type AlGaN layer and p-type GaN layer.In order to the value range of x be 0.51≤x
When≤0.57, internal quantum efficiency and the output power raising of ultraviolet LED epitaxial structure are more apparent, optional in the present embodiment,
It is Al undoped with buffer layer0.5Ga0.5N buffer layers, thickness are 1.5 μm, and growth temperature is 530 DEG C, and the Al0.5Ga0.5N is buffered
Layer recrystallizes for 6 minutes in 1050 DEG C of constant temperature.N-type AlGaN layer is N-type Al0.5Ga0.5N layers, thickness is 3.0 μm, doping concentration 5
×1018cm-3, growth temperature is 1050 DEG C.Growth temperature in multiple quantum wells is 1020 DEG C, wherein, every layer of Al0.36Ga0.64N is thick
It spends for 8nm, every layer of Al0.5Ga0.5N layer thickness is 3nm.The structure of multiple quantum wells includes 6 week of alternating growth in the present embodiment
The Al of phase0.36Ga0.64N/Al0.5Ga0.5N.In other embodiments, the cycle of multi-quantum pit structure can also be other numerical value, this
This is not limited in embodiment.Electronic barrier layer is the p-type Al of 10nm thickness0.65Ga0.35N layers, doping concentration is 2 × 1017cm-3, growth temperature is 990 DEG C.P-type AlGaN layer is the p-type Al of 10nm thickness0.5Ga0.5N layers, doping concentration is 5 × 1017cm-3, it is raw
Long temperature is 990 DEG C.P-type GaN layer, thickness 100nm, growth temperature are 990 DEG C, and doping concentration is 1 × 1018cm-3.At this
, can be according to the material component difference of different structure sheafs in the other embodiment of utility model, and different x values are set, so that
Internal quantum efficiency and the output power raising for obtaining ultraviolet LED epitaxial structure are more apparent.
The specific material of substrate is not limited in the present embodiment, can be made choice according to actual demand, it is necessary to illustrate,
Optional in the present embodiment since sapphire has higher translucency, the substrate is sapphire.What sapphire was often employed
There are A faces, C faces, R faces in section.Lattice constant fitting percentage between sapphire C faces and iii-v and II-VI group deposition film
It is small, while meet GaN and build heat safe requirement in brilliant processing procedure, therefore, optional in the present embodiment, the substrate is the indigo plant in C faces
Jewel substrate.
It is super to increase setting between multiple quantum wells and electronic barrier layer for ultraviolet LED epitaxial structure provided by the utility model
Lattice structure, the superlattice structure can effectively alleviate answering between the last one quantum of active area base and electronic barrier layer
Become, inhibit electronics leakage, increase hole injection efficiency, so as to improve the optical output power of ultraviolet LED and internal quantum efficiency, make it
More preferably luminescent properties are presented.In addition, the strain beaten between electronic barrier layer is built come significantly by reducing the last one quantum
Weaken the polarized electric field in active area quantum well structure, and increase the Duplication of electronics and hole wave functions spatially, weaken
Quantum confined stark effect so that the probability increase of radiation recombination occurs for active area electronics and hole, and then improves
The internal quantum efficiency and transmission power of ultraviolet LED epitaxial structure.
For the deep ultraviolet LED structure of above-mentioned offer, the utility model does not limit the making side of ultraviolet LED epitaxial structure
Method, optionally, MOCVD may be employed, and (Metal-organic Chemical Vapor DePosition, Organometallic close
Object chemical vapor deposition) each layer structure of equipment making.Specifically, it is described ultraviolet also to provide a kind of making for the utility model embodiment
The production method of LED epitaxial structure, including：
First, Sapphire Substrate is inserted into reative cell.
Then, in 1090 DEG C of logical high-purity hydrogen high temperature sintering substrates.
Then, Ga sources, Al sources and the undoped Al of nitrogen source growing low temperature are led at 530 DEG C0.5Ga0.5N buffer layers, it is undoped
Al0.5Ga0.5The thickness of N buffer layers is about 1.5 μm.Then, 1050 DEG C and constant temperature 6 minutes or so are warming up to so that undoped
Al0.5Ga0.5N buffer layers recrystallize.
Then, Ga sources, Al sources, ammonia and silane SiH are passed through at 1050 DEG C4, growth N-type Al0.5Ga0.5It N layers, mixes
Miscellaneous concentration is 5 × 1018cm-3, thickness is 3 μm.
Next, it cools to 1020 DEG C and is passed through Ga sources, Al sources, the Al of nitrogen source growth 8nm thickness0.36Ga0.64N quantum are built.
Then, the Al of 3nm thickness is grown at 1020 DEG C0.5Ga0.5N Quantum Well.First two steps step is repeated, 6 cycles are grown in symbiosis
Al0.36Ga0.64N/Al0.5Ga0.5N multi-quantum pit structures.
And then, 990 DEG C are cooled to, is passed through Al sources, Ga sources, ammonia and Mg sources, grows AlxGa1-xN/Al0.36Ga0.64N
Superlattice structure.AlxGa1-xN/Al0.36Ga0.64In N superlattice structures, the value range of x is 0.51≤x≤0.57.It is super brilliant
Lattice structure is AlxGa1-xN/Al0.36Ga0.647 cycles of both N alternating growths, the thickness of every layer of AlGaN are 1nm, doping concentration
For 5 × 1017cm-3。
Then, at 990 DEG C, the p-type Al of one layer of 10nm thickness is grown on superlattice structure0.65Ga0.35N electronic blockings
Layer, doping concentration are 2 × 1017cm-3。
Then, at 990 DEG C, the p-type Al of one layer of 10nm thickness is grown0.5Ga0.5N layers, doping concentration is 5 × 1017cm-3。
Finally, at 990 DEG C, the p-type GaN layer of one layer of 100nm thickness is grown, doping concentration is 1 × 1018cm-3, and
700 DEG C are annealed 20 minutes, obtain the p-type GaN layer of high hole concentration.
It should be noted that Ga sources, the concrete form in Al sources are not limited in the present embodiment, and optionally, institute in the present embodiment
For trimethyl gallium TMGa, Al sources are trimethyl aluminium TMAl in the Ga sources used, and nitrogen source is ammonia NH3, carrier gas H2, N-type and p-type are mixed
Miscellaneous source is respectively silane SiH4With two luxuriant magnesium Cp2Mg。
AlGaN superlattice structures are employed by above-mentioned ultraviolet LED epitaxial structure, polarity effect can be reduced, weaken electronics resistance
Barrier EBL is to the band curvature between p-type AlGaN layer so that Red Shift Phenomena is improved, and shorter emission wavelength is presented, hair
Luminous intensity also increases therewith；Output power can be improved significantly, and output power increases with the amplification of electric current, present preferable
Power-performance；The complexity of electronics and hole-recombination is reduced, thus required energy declines so that there is smaller open
Open voltage；Due to the design of new construction, it may be such that chip is smaller with the increase of electric current its voltage change, show better two pole
Pipe performance；Furthermore it can more effectively realize that p-type is adulterated, enhance electric conductivity, resistance is promoted to reduce, so as to reduce operating voltage, this has
It is energy saving beneficial to the energy consumption for reducing UV LED chip.
It should be noted that each embodiment in this specification is described by the way of progressive, each embodiment weight
Point explanation is all difference from other examples, and just to refer each other for identical similar part between each embodiment.
The foregoing description of the disclosed embodiments enables professional and technical personnel in the field to realize or new using this practicality
Type.A variety of modifications of these embodiments will be apparent for those skilled in the art, determine herein
The General Principle of justice can be realized in other embodiments without departing from the spirit or scope of the present utility model.Cause
This, the utility model is not intended to be limited to the embodiments shown herein, and is to fit to and principles disclosed herein
The most wide scope consistent with features of novelty.
Claims (12)
1. a kind of ultraviolet LED epitaxial structure, which is characterized in that including：
Substrate；
Undoped buffer layer, N-type AlGaN layer, multi-quantum pit structure, superlattice structure, electricity over the substrate is grown successively
Sub- barrier layer, p-type AlGaN layer and p-type GaN layer；
Wherein, the superlattice structure includes at least one layer of first AlGaN layer and at least one layer of second AlGaN layer, and described first
AlGaN layer and second AlGaN layer are alternately superimposed.
2. ultraviolet LED epitaxial structure according to claim 1, which is characterized in that the multi-quantum pit structure includes alternating
The Al in 6 cycles of growth0.36Ga0.64N/Al0.5Ga0.5N。
3. ultraviolet LED epitaxial structure according to claim 2, which is characterized in that first AlGaN layer is AlxGa1-xN
Layer, second AlGaN layer are Al0.36Ga0.64N layers, and first AlGaN layer is grown in the multiple quantum wells
Al0.5Ga0.5N layer surfaces.
4. ultraviolet LED epitaxial structure according to claim 3, which is characterized in that the value range of the x is 0.51≤x
≤0.57。
5. ultraviolet LED epitaxial structure according to claim 4, which is characterized in that the superlattice structure includes 7 cycles
AlxGa1-xN/Al0.36Ga0.64N, every layer of AlxGa1-xN layers and every layer of Al0.36Ga0.64N layers of thickness is 1nm.
6. according to the ultraviolet LED epitaxial structure described in claim 1-5 any one, which is characterized in that the substrate is C faces
Sapphire Substrate.
7. according to the ultraviolet LED epitaxial structure described in claim 1-5 any one, which is characterized in that described undoped with buffering
Layer is Al0.5Ga0.5N buffer layers, thickness are 1.5 μm.
8. according to the ultraviolet LED epitaxial structure described in claim 1-5 any one, which is characterized in that the N-type AlGaN layer
For N-type Al0.5Ga0.5N layers, thickness is 3.0 μm.
9. ultraviolet LED epitaxial structure according to claim 2, which is characterized in that every layer in the multiple quantum wells
Al0.36Ga0.64N thickness is 8nm, every layer of Al0.5Ga0.5N layer thickness is 3nm.
10. ultraviolet LED epitaxial structure according to claim 1, which is characterized in that the electronic barrier layer is 10nm thickness
P-type Al0.65Ga0.35N layers.
11. ultraviolet LED epitaxial structure according to claim 1, which is characterized in that the p-type AlGaN layer is 10nm thickness
P-type Al0.5Ga0.5N layers.
12. ultraviolet LED epitaxial structure according to claim 1, which is characterized in that the thickness of the p-type GaN layer is
100nm。
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109461799A (en) * | 2018-09-19 | 2019-03-12 | 华中科技大学鄂州工业技术研究院 | The epitaxial structure and preparation method thereof of deep ultraviolet LED |
| CN109920896A (en) * | 2019-01-23 | 2019-06-21 | 华灿光电（浙江）有限公司 | Gallium nitride based LED epitaxial slice and its manufacturing method |
| CN112951961A (en) * | 2021-02-08 | 2021-06-11 | 江西乾照光电有限公司 | Deep ultraviolet LED and manufacturing method thereof |
-
2017
- 2017-07-21 CN CN201720898812.1U patent/CN207381425U/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109461799A (en) * | 2018-09-19 | 2019-03-12 | 华中科技大学鄂州工业技术研究院 | The epitaxial structure and preparation method thereof of deep ultraviolet LED |
| CN109920896A (en) * | 2019-01-23 | 2019-06-21 | 华灿光电（浙江）有限公司 | Gallium nitride based LED epitaxial slice and its manufacturing method |
| CN109920896B (en) * | 2019-01-23 | 2021-04-06 | 华灿光电（浙江）有限公司 | Gallium nitride-based light emitting diode epitaxial wafer and manufacturing method thereof |
| CN112951961A (en) * | 2021-02-08 | 2021-06-11 | 江西乾照光电有限公司 | Deep ultraviolet LED and manufacturing method thereof |
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