CN107180899B - Deep ultraviolet LED - Google Patents
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- CN107180899B CN107180899B CN201710600453.1A CN201710600453A CN107180899B CN 107180899 B CN107180899 B CN 107180899B CN 201710600453 A CN201710600453 A CN 201710600453A CN 107180899 B CN107180899 B CN 107180899B
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- 239000000758 substrate Substances 0.000 claims abstract description 44
- 230000010287 polarization Effects 0.000 claims abstract description 10
- 229910002704 AlGaN Inorganic materials 0.000 claims abstract 16
- 239000000203 mixture Substances 0.000 claims description 12
- 229910052594 sapphire Inorganic materials 0.000 claims description 8
- 239000010980 sapphire Substances 0.000 claims description 8
- 230000008859 change Effects 0.000 description 12
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- 229910002601 GaN Inorganic materials 0.000 description 11
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- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 6
- 230000000903 blocking effect Effects 0.000 description 6
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- 239000000463 material Substances 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
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- 238000004519 manufacturing process Methods 0.000 description 4
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- 239000004065 semiconductor Substances 0.000 description 4
- 230000005428 wave function Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
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- 229910000077 silane Inorganic materials 0.000 description 2
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- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- UOSXPFXWANTMIZ-UHFFFAOYSA-N cyclopenta-1,3-diene;magnesium Chemical compound [Mg].C1C=CC=C1.C1C=CC=C1 UOSXPFXWANTMIZ-UHFFFAOYSA-N 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
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- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical group C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical group C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
- H01L33/145—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
- H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
Abstract
The application provides a deep ultraviolet LED, comprising: a substrate; an undoped buffer layer located on a surface of the substrate; the undoped buffer layer is positioned on the surface of the substrate, facing away from the substrate; the multi-quantum well structure is positioned on the surface of the N-type AlGaN layer, which is away from the substrate; the P-type AlGaN structure with the gradually changed V-type Al component is positioned on the surface of the multi-quantum well structure, which is far away from the substrate, the P-type AlGaN structure with the gradually changed V-type Al component adopts polarization doping, and the Al component in the P-type AlGaN structure with the gradually changed V-type Al component is different from the Al component of the multi-quantum well structure; and the P-type AlGaN structure with the gradually changed V-type Al component is positioned on the P-type GaN layer which is away from the surface of the substrate. The P-type AlGaN structure with the gradually changed V-type Al components can obtain holes with higher concentration, so that the internal quantum efficiency and the emission power of the ultraviolet LED are improved.
Description
Technical Field
The application relates to the technical field of semiconductor photoelectrons, in particular to a deep-ultraviolet Light-Emitting Diode (LED).
Background
Ultraviolet LEDs based on AlGaN (aluminum gallium nitride) materials are a main trend of the current nitride technology development and the third generation material technology development, and have wide application prospects. Ultraviolet LEDs are used in a wide range of applications such as air and water purification, disinfection, ultraviolet medical treatment, high density optical storage systems, full color displays, and solid state white light illumination, among others. Semiconductor ultraviolet light sources have attracted considerable attention in the semiconductor photovoltaic industry as a further significant industry behind semiconductor lighting.
However, unlike blue LEDs, ultraviolet LEDs are currently in the development stage of technology, and there are some problems that are difficult to break through, such as relatively low internal quantum efficiency and emission power of AlGaN-based ultraviolet LEDs.
Therefore, how to improve the internal quantum efficiency and the emission power of the AlGaN-based ultraviolet LED is a problem to be solved.
Disclosure of Invention
In view of the above, the present application provides a deep ultraviolet LED to solve the problem of low internal quantum efficiency and emission power of the deep ultraviolet LED in the prior art.
In order to achieve the above purpose, the present application provides the following technical solutions:
a deep ultraviolet LED comprising:
a substrate;
an undoped buffer layer located on a surface of the substrate;
the undoped buffer layer is positioned on the surface of the substrate, facing away from the substrate;
the multi-quantum well structure is positioned on the surface of the N-type AlGaN layer, which is away from the substrate;
the P-type AlGaN structure with the gradually changed V-type Al component is positioned on the surface of the multi-quantum well structure, which is far away from the substrate, the P-type AlGaN structure with the gradually changed V-type Al component adopts polarization doping, and the Al component in the P-type AlGaN structure with the gradually changed V-type Al component is different from the Al component of the multi-quantum well structure;
and the P-type AlGaN structure with the gradually changed V-type Al component is positioned on the P-type GaN layer which is away from the surface of the substrate.
Preferably, the P-type AlGaN structure with the graded V-type Al composition comprises at least one layer of Al 0.65 Ga 0.35 N layer and at least one layer of Al x Ga 1-x An N layer of the Al 0.65 Ga 0.35 N layer and the Al x Ga 1-x N layers are alternately overlapped, wherein the Al 0.65 Ga 0.35 An N layer is grown on the surface of the multiple quantum well structure.
Preferably, the Al x Ga 1-x The value range of x in the N layers is as follows: x is more than or equal to 0.3 and less than or equal to 0.4.
Preferably, the thickness of each layer of the P-type AlGaN structure with the gradually changed V-type Al component is 12.22nm, and the total thickness of each layer of the P-type AlGaN structure is 110nm.
Preferably, the doping concentration of the P-type AlGaN structure with the V-type Al component gradually changed is 5 multiplied by 10 17 cm -3 The growth temperature was 990 ℃.
Preferably, the substrate is a C-plane sapphire substrate.
Preferably, the undoped buffer layer is undoped Al 0.5 Ga 0.5 An N buffer layer with a thickness of 1.5 μm and a growth temperature of 530 ℃ and the undoped Al 0.5 Ga 0.5 The N buffer layer was recrystallized at 1050℃for 6 minutes.
Preferably, the N-type AlGaN layer is Al 0.5 Ga 0.5 N layer with thickness of 3.0 μm and doping concentration of 5×10 18 cm -3 The growth temperature was 1050 ℃.
Preferably, the multiple quantum well structure is 5 cycles of Al 0.36 Ga 0.64 N layer and Al 0.5 Ga 0.5 An N-layer stacked structure in which the Al 0.36 Ga 0.64 And an N layer grows on the surface of the N-type AlGaN layer.
Preferably, the growth temperature of the multiple quantum well structure is 1020 ℃, wherein each layer of Al 0.36 Ga 0.64 The thickness of the N layer is 10nm, each layer of Al 0.5 Ga 0.5 The thickness of the N layer was 3nm.
According to the technical scheme, the deep ultraviolet LED provided by the application is provided with the P-type AlGaN structure with the gradually-changed V-type Al component between the multiple quantum well structure and the P-type GaN layer. On the one hand, the V-shaped Al component gradual change P-type AlGaN structure adopts a polarization doping mode, so that holes with higher concentration can be obtained, the hole injection rate is improved, more holes are injected into the quantum well of the active region, the probability of recombination of electrons and hole radiation of the active region is improved, and the internal quantum efficiency and the emission power of the ultraviolet LED are improved.
On the other hand, the junction of the P-type AlGaN structure with the gradually changed V-shaped Al component and the last barrier layer of the multi-quantum well structure has different Al components, and the active region has higher electron concentration, so that the P-type AlGaN structure with the gradually changed V-shaped Al component also has the function of an electron blocking layer, can more effectively block the leakage of electrons from the active region, can replace an Electron Blocking Layer (EBL), simultaneously reduces the electron leakage, increases the hole injection efficiency, increases the recombination probability of electrons and holes, and further improves the internal quantum efficiency and the emission power of the ultraviolet LED.
On the other hand, since the P-type AlGaN structure with the V-type Al composition graded is adopted, the concentration of electrons and holes increases, and the recombination probability increases. Under the applied electric field, the efficiency of electron and hole recombination increases, and the polarizing electric field formed under the condition that the original internal electrons and holes are not recombined is weakened due to the increase of recombination probability. The deep ultraviolet LED provided by the application can weaken the polarized electric field in the quantum well structure of the active region and weaken the quantum confinement Stark effect, so that more electron and hole wave functions are overlapped, the radiation recombination of the active region is greatly increased, and the internal quantum efficiency of the ultraviolet LED is improved.
Drawings
In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings that are required to be used in the embodiments or the description of the prior art will be briefly described below, and it is obvious that the drawings in the following description are only embodiments of the present application, and that other drawings can be obtained according to the provided drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic structural diagram of a deep ultraviolet LED according to an embodiment of the present application;
fig. 2 is a schematic diagram of a P-type AlGaN structure with gradually changed V-type Al composition in a deep ultraviolet LED according to an embodiment of the present application.
Detailed Description
As described in the background section, the internal quantum efficiency and emission power of AlGaN-based uv LEDs in the prior art are relatively low.
At present, the reason for low luminous efficiency of the AlGaN-based deep ultraviolet LED light source is mainly as follows: the carrier injection efficiency of the AlGaN material with high Al component is low, so that the improvement of the internal quantum efficiency of the ultraviolet LED is restricted; the structural properties of the high Al component AlGaN material determine that the light-emitting efficiency is low.
Based on this, the present application provides a deep ultraviolet LED comprising:
a substrate;
an undoped buffer layer located on a surface of the substrate;
the undoped buffer layer is positioned on the surface of the substrate, facing away from the substrate;
the multi-quantum well structure is positioned on the surface of the N-type AlGaN layer, which is away from the substrate;
the P-type AlGaN structure with the gradually changed V-type Al component is positioned on the surface of the multi-quantum well structure, which is far away from the substrate, the P-type AlGaN structure with the gradually changed V-type Al component adopts polarization doping, and the Al component in the P-type AlGaN structure with the gradually changed V-type Al component is different from the Al component of the multi-quantum well structure;
and the P-type AlGaN structure with the gradually changed V-type Al component is positioned on the P-type GaN layer which is away from the surface of the substrate.
According to the deep ultraviolet LED provided by the application, a P-type AlGaN structure with gradually changed V-type Al components is arranged between the multiple quantum well structure and the P-type GaN layer. Because the V-shaped Al component gradual change P-type AlGaN structure adopts a polarization doping mode, holes with higher concentration can be obtained, so that the hole injection rate is improved, more holes are injected into the quantum well of the active region, the probability of recombination of electrons and hole radiation of the active region is improved, and the internal quantum efficiency and the emission power of the ultraviolet LED are improved. On the other hand, the P-type AlGaN structure with the gradually changed V-type Al components also has the function of an electron blocking layer, can more effectively block the leakage of electrons from an active region, and further improves the internal quantum efficiency and the emission power of the ultraviolet LED. On the other hand, due to the adoption of the P-type AlGaN structure with the gradually changed V-type Al components, the polarized electric field in the quantum well structure of the active region can be weakened, the quantum confinement Stark effect is weakened, more electrons and hole wave functions are overlapped, the radiation recombination of the active region is greatly increased, and the internal quantum efficiency of the ultraviolet LED is improved.
The following description of the embodiments of the present application will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present application, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the application without making any inventive effort, are intended to be within the scope of the application.
Referring to fig. 1, a deep ultraviolet LED according to an embodiment of the present application includes: a substrate 1; an undoped buffer layer 2 located on the surface of the substrate 1; an N-type AlGaN layer 3 located on the surface of the undoped buffer layer 2 facing away from the substrate 1; the multi-quantum well structure 4 is positioned on the surface of the N-type AlGaN layer 3, which is away from the substrate 1; the P-type AlGaN structure 5 with the gradually changed V-type Al composition is positioned on the surface of the multi-quantum well structure 4, which is far away from the substrate, the P-type AlGaN structure 5 with the gradually changed V-type Al composition adopts polarization doping, and the Al composition in the P-type AlGaN structure 5 with the gradually changed V-type Al composition is different from that of the multi-quantum well structure 4; the P-type AlGaN layer 6 is positioned on the surface of the V-type Al component gradual change P-type AlGaN structure 5, which is away from the substrate 1.
It should be noted that, in the embodiment of the present application, the specific structure of the P-type AlGaN structure with graded V-type Al composition is not limited, and optionally, as shown in fig. 2, the P-type AlGaN structure 5 with graded V-type Al composition includes at least one layer of Al 0.65 Ga 0.35 N layer a and at least one layer of Al x Ga 1-x N layer b, al 0.65 Ga 0.35 N layer a and Al x Ga 1-x N layers b are alternately stacked, wherein, al 0.65 Ga 0.35 The N layer a is in contact with the surface of the multiple quantum well structure. That is, the Al composition of the deep ultraviolet LED provided by the embodiment of the application at the junction with the last barrier layer of the multiple quantum well is gradually changed from 0.65.
The P-type AlGaN structure with the gradually changed V-type Al component comprises alternately overlapped Al 0.65 Ga 0.35 N layer a and Al x Ga 1-x The N layer b, namely the gradual change of the V-shaped Al component gradual change P-type AlGaN structure is changed into Al 0.65 Ga 0.35 N-Al x Ga 1-x N and Al x Ga 1-x N-Al 0.65 Ga 0.35 N, gradual change degree ofWith the change of the design value of x, the gradual change degree of the P-type AlGaN structure with gradual change of the V-type Al component can be controlled.When the gradient degree of the Al component is increased, namely the value of x is reduced, the injection rate of carriers is increased, and the internal quantum efficiency, the output power and the luminous intensity of the deep ultraviolet LED with the P-type AlGaN structure with the V-type Al component gradient are all improved.
The present application is not limited to Al x Ga 1-x And optionally, the inventor obtains that when the value range of x is more than or equal to 0.3 and less than or equal to 0.4 through simulation, the thickness of each layer of structure in the P-type AlGaN structure with gradually changed V-type Al components is 12.22nm, and the total thickness is 110nm, so that the internal quantum efficiency and the output power of the deep ultraviolet LED are obviously improved.
The doping concentration and Al composition of the structural layers such as the multi-quantum well structure, the P-type GaN layer, the undoped buffer layer, and the like are not limited in the present application. In order to obviously improve the internal quantum efficiency and the output power of the deep ultraviolet LED when the value range of x is more than or equal to 0.3 and less than or equal to 0.4, the undoped buffer layer 2 is defined as undoped Al in the embodiment 0.5 Ga 0.5 An N buffer layer with a thickness of 1.5 μm and a growth temperature of 530 ℃ and the undoped Al 0.5 Ga 0.5 The N buffer layer was recrystallized at 1050℃for 6 minutes. The N-type AlGaN layer 3 comprises Al 0.5 Ga 0.5 N, thickness of 3.0 μm, doping concentration of 5×10 18 cm -3 The growth temperature was 1050 ℃. The multiple quantum well structure 4 is 5 cycles of Al 0.36 Ga 0.64 N layer and Al 0.5 Ga 0.5 An N-layer stacked structure in which the Al 0.36 Ga 0.64 The N layer is in contact with the N-type AlGaN layer 4. In other embodiments of the present application, al in the multi-quantum well structure 0.36 Ga 0.64 N layer and Al 0.5 Ga 0.5 The period of the stacked structure of the N layers may be 5 to 12 periods, which is not limited in this embodiment. In this embodiment, the growth temperature of the multi-quantum well structure is 1020 ℃, wherein each layer of Al 0.36 Ga 0.64 The thickness of the N layer is 10nm, each layer of Al 0.5 Ga 0.5 The thickness of the N layer was 3nm. The doping concentration of the P-type GaN layer 6 is 1×10 18 cm -3 The thickness was about 10nm, the growth temperature was 990℃and annealing was performed at 700℃for 20 minutes.
In this embodiment, the specific material of the substrate is not limited, and may be selected according to actual requirements, and it should be noted that, because sapphire has a higher light transmittance, in this embodiment, the substrate is optionally sapphire. The commonly used cut surfaces of the sapphire are an A surface, a C surface and an R surface. The lattice constant adaptation rate between the C surface of the sapphire and the III-V group and II-VI group deposition films is small, and meanwhile, the requirement of high temperature resistance in the GaN base crystal manufacturing process is met, so that the substrate is optional in the embodiment, and is a C-surface sapphire substrate.
The deep ultraviolet LED provided in the embodiment of the present application may further include a first electrode 7 and a second electrode 8, where the first electrode is located on the P-type GaN layer 6, and the second electrode 8 is located on the N-type AlGaN layer 3, and in this embodiment, materials of the first electrode 7 and the second electrode 8 are not limited.
According to the deep ultraviolet LED provided by the application, a P-type AlGaN structure with gradually changed V-type Al components is arranged between the multiple quantum well structure and the P-type GaN layer. Because the V-shaped Al component gradual change P-type AlGaN structure adopts a polarization doping mode, holes with higher concentration can be obtained, so that the hole injection rate is improved, more holes are injected into the quantum well of the active region, the probability of recombination of electrons and hole radiation of the active region is improved, and the internal quantum efficiency and the emission power of the ultraviolet LED are improved. On the other hand, the P-type AlGaN structure with the gradually changed V-type Al components also has the function of an electron blocking layer, can more effectively block the leakage of electrons from an active region, and further improves the internal quantum efficiency and the emission power of the ultraviolet LED. On the other hand, due to the adoption of the P-type AlGaN structure with the gradually changed V-type Al components, the polarized electric field in the quantum well structure of the active region can be weakened, the quantum confinement Stark effect is weakened, more electrons and hole wave functions are overlapped, the radiation recombination of the active region is greatly increased, and the internal quantum efficiency of the ultraviolet LED is improved.
For the deep ultraviolet LED structure provided by the application, the manufacturing method of the deep ultraviolet LED is not limited, and each layer of structure can be manufactured by adopting MOCVD (Metal-organic Chemical Vapor DePosition, metal organic chemical vapor deposition) equipment alternatively. Specifically, the embodiment of the application also provides a manufacturing method for manufacturing the deep ultraviolet LED, which comprises the following steps:
first, a sapphire substrate is placed in a reaction chamber. Then, high-temperature burning the substrate by passing high-purity hydrogen at 1090 ℃. Then, introducing Ga source, al source and nitrogen source at 530 ℃ to grow low-temperature undoped Al 0.5 Ga 0.5 N buffer layer, undoped Al 0.5 Ga 0.5 The thickness of the N buffer layer is about 1.5 μm. Then, the temperature was raised to 1050℃and kept constant for about 6 minutes, so that the buffer layer was recrystallized.
Subsequently, ga source, al source, ammonia and silane SiH are introduced at 1050 DEG C 4 Growing N-type Al 0.5 Ga 0.5 N layer with doping concentration of 5×10 18 cm- 3 The thickness was 3. Mu.m.
Next, the temperature is reduced to 1020 ℃ and Ga source, al source and ammonia gas are introduced to grow Al with the thickness of 10nm 0.36 Ga 0.64 N quantum barriers. Next, al was grown at 1020℃to a thickness of 3nm 0.5 Ga 0.5 An N quantum well. Repeating the previous two steps, symbiotic Al with 5 periods 0.36 Ga 0.64 N/Al 0.5 Ga 0.5 N multiple quantum well structure.
And then cooling to 990 ℃, introducing an Al source, a Ga source, ammonia gas and an Mg source, and growing the P-type AlGaN structure with the gradually-changed V-type Al component. The gradual change degree is Al 0.65 Ga 0.35 N-Al x Ga 1-x N and Al x Ga 1-x N-Al 0.65 Ga 0.35 N. Wherein, the value range of x is more than or equal to 0.3 and less than or equal to 0.4. In the P-type AlGaN structure with the gradually changed V-type Al component, the thickness of each layer is 12.22nm, and the total thickness is 110nm. The P-type AlGaN structure with gradually changed V-type Al components adopts polarization doping, and the doping concentration is 5 multiplied by 10 17 cm -3 。
Then, a P-type GaN layer is grown on the P-type AlGaN structure with gradually changed V-type Al components, and the thickness is 10nm. Finally, annealing is carried out at 700 ℃ for 20 minutes, and the P-type layer with high hole concentration is obtained.
In this embodiment, the specific forms of the Ga source and the Al source are not limited, and alternatively, the Ga source used in this embodiment is trimethylgallium TMGa, the Al source is trimethylaluminum TMAl, and the nitrogen source is ammonia NH 3 The carrier gas being H 2 N-type and P-type doping sources, respectivelyIs silane SiH 4 And a magnesium dicyclopentadiene Cp 2 Mg。
The P-type AlGaN structure with the gradually changed V-type Al component is obtained by adopting a polarization doping mode, and holes with higher concentration can be obtained, so that the hole injection rate is improved, more holes are injected into a quantum well of an active region, the probability of recombination of electrons and hole radiation of the active region is improved, and the internal quantum efficiency and the emission power of the deep ultraviolet LED are improved.
In the embodiment of the application, the P-type AlGaN structure with gradually changed V-type Al components is adopted, the Al components at the junction with the last barrier layer of the quantum well gradually change from 0.65, and the active region has higher electron concentration, so that the P-type AlGaN structure with gradually changed V-type Al components also has the function of an electron blocking layer, can more effectively block the leakage of electrons from the active region, can remove the electron blocking layer, and simplify the epitaxial structure of the deep ultraviolet LED.
In the embodiment of the application, the P-type AlGaN structure with gradually changed V-type Al components is adopted, so that the polarized electric field in the quantum well structure of the active region can be weakened, the quantum confinement Stark effect is weakened, more electron and hole wave functions are overlapped, the radiation recombination of the active region is greatly increased, and the internal quantum efficiency of the ultraviolet LED is improved.
It should be noted that, in the present specification, each embodiment is described in a progressive manner, and each embodiment is mainly described as different from other embodiments, and identical and similar parts between the embodiments are all enough to be referred to each other.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present application. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the application. Thus, the present application is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (8)
1. A deep ultraviolet LED, comprising:
a substrate;
an undoped buffer layer located on a surface of the substrate;
the undoped buffer layer is positioned on the surface of the substrate, facing away from the substrate;
the multi-quantum well structure is positioned on the surface of the N-type AlGaN layer, which is away from the substrate;
the P-type AlGaN structure with the gradually changed V-type Al component is positioned on the surface of the multiple quantum well structure, which is far away from the substrate, the P-type AlGaN structure with the gradually changed V-type Al component adopts polarization doping, and the Al component in the P-type AlGaN structure with the gradually changed V-type Al component is different from the Al component of the multiple quantum well structure, and the P-type AlGaN structure with the gradually changed V-type Al component comprises at least one layer of Al 0.65 Ga 0.35 N layer and at least one layer of Al x Ga 1-x An N layer of the Al 0.65 Ga 0.35 N layer and the Al x Ga 1-x N layers are alternately overlapped, wherein the Al 0.65 Ga 0.35 The N layer grows on the surface of the multi-quantum well structure; the value range of x in the AlxGa1-xN layer is as follows: x is more than or equal to 0.3 and less than or equal to 0.4;
and the P-type AlGaN structure with the gradually changed V-type Al component is positioned on the P-type GaN layer which is away from the surface of the substrate.
2. The deep ultraviolet LED of claim 1, wherein the thickness of each layer of the V-shaped Al graded P-type AlGaN structure is 12.22nm, and the total thickness is 110nm.
3. The deep ultraviolet LED of claim 2, wherein the V-type Al composition graded P-type AlGaN structure has a doping concentration of 5 x 10 17 cm -3 The growth temperature was 990 ℃.
4. The deep ultraviolet LED of any of claims 1-3, wherein the substrate is a C-plane sapphire substrate.
5. According to the weightsThe deep ultraviolet LED of any one of claims 1-3, wherein the undoped buffer layer is undoped Al 0.5 Ga 0.5 An N buffer layer with a thickness of 1.5 μm and a growth temperature of 530 ℃ and the undoped Al 0.5 Ga 0.5 The N buffer layer was recrystallized at 1050℃for 6 minutes.
6. The deep ultraviolet LED of any one of claims 1-3, wherein the N-type AlGaN layer is Al 0.5 Ga 0.5 N layer with thickness of 3.0 μm and doping concentration of 5×10 18 cm -3 The growth temperature was 1050 ℃.
7. The deep ultraviolet LED of any one of claims 1-3, wherein the multiple quantum well structure is 5 cycles of Al 0.36 Ga 0.64 N layer and Al 0.5 Ga 0.5 An N-layer stacked structure in which the Al 0.36 Ga 0.64 And an N layer grows on the surface of the N-type AlGaN layer.
8. The deep ultraviolet LED of claim 7, wherein the growth temperature of the multiple quantum well structure is 1020 ℃, wherein each layer of the Al 0.36 Ga 0.64 The thickness of the N layer is 10nm, each layer of Al 0.5 Ga 0.5 The thickness of the N layer was 3nm.
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| CN107180899B (en) * | 2017-07-21 | 2023-11-14 | 广东工业大学 | Deep ultraviolet LED |
| CN108231960B (en) * | 2018-01-05 | 2023-10-27 | 广东省半导体产业技术研究院 | AlGaN-based semiconductor ultraviolet device capable of improving light efficiency and preparation method thereof |
| CN108305907B (en) * | 2018-01-26 | 2019-10-11 | 中国电子科技集团公司第三十八研究所 | A kind of novel homojunction PIN ultraviolet detector |
| CN108365069B (en) * | 2018-02-06 | 2020-06-12 | 华南师范大学 | Preparation method of high-brightness V-shaped polarized doped deep ultraviolet LED |
| CN109616561B (en) * | 2018-12-13 | 2020-04-28 | 广东工业大学 | Deep ultraviolet LED chip, deep ultraviolet LED epitaxial wafer and preparation method thereof |
| CN112242464B (en) * | 2020-09-29 | 2022-01-28 | 苏州紫灿科技有限公司 | Deep ultraviolet LED with hole accumulation structure and preparation method thereof |
| CN114551654B (en) * | 2022-01-20 | 2023-08-22 | 北京大学 | Method and device for improving communication performance of blue-green light Micro-LED by using composite p-type hole injection layer |
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