CN112259647B - Preparation method of light-emitting diode epitaxial wafer and light-emitting diode epitaxial wafer - Google Patents

Preparation method of light-emitting diode epitaxial wafer and light-emitting diode epitaxial wafer Download PDF

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CN112259647B
CN112259647B CN202010936378.8A CN202010936378A CN112259647B CN 112259647 B CN112259647 B CN 112259647B CN 202010936378 A CN202010936378 A CN 202010936378A CN 112259647 B CN112259647 B CN 112259647B
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ingan
layer
film
well layer
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CN112259647A (en
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洪威威
王倩
梅劲
张奕
董彬忠
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HC Semitek Zhejiang Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen

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Abstract

The disclosure provides a preparation method of a light-emitting diode epitaxial wafer and the light-emitting diode epitaxial wafer, and belongs to the field of light-emitting diode manufacturing. And when the InGaN well layer In the multi-quantum well layer is grown, introducing an In source, a Ga source and an N source into the reaction cavity, and growing the InGaN film. And then closing the In source, the Ga source and the N source, and keeping the InGaN film at the temperature for a first set time. In the period of closing the In source, the Ga source and the N source, the InGaN film is In a state close to annealing, atoms and molecules In the InGaN film automatically move to a stable state, the stress In the InGaN film can be released, and the overall crystal quality of the InGaN film is improved. The InGaN well layer obtained through the final cycle growth has good crystal quality, the crystal quality of the multiple quantum well layer is improved, and the light emitting efficiency of the light emitting diode is improved finally.

Description

Preparation method of light-emitting diode epitaxial wafer and light-emitting diode epitaxial wafer
Technical Field
The disclosure relates to the field of light emitting diode manufacturing, and in particular relates to a method for manufacturing a light emitting diode epitaxial wafer and the light emitting diode epitaxial wafer.
Background
A light Emitting Diode is a semiconductor electronic component that can emit light. As a novel high-efficiency, environment-friendly and green solid-state illumination light source, the solid-state illumination light source is rapidly and widely applied, such as traffic signal lamps, automobile interior and exterior lamps, urban landscape illumination, mobile phone backlight sources and the like, and the aim of improving the luminous efficiency of a chip is continuously pursued by LEDs.
The epitaxial wafer of the current light emitting diode generally comprises a substrate and an n-type layer, a multi-quantum well layer and a p-type layer which are sequentially grown on the substrate. The multiple quantum well layer comprises InGaN well layers and GaN barrier layers which are alternately stacked, and carriers are recombined in the InGaN well layers to emit light. Due to the fact that certain lattice mismatch still exists between the InGaN well layer and the GaN barrier layer, the lattice mismatch between the InGaN well layer and the GaN barrier layer causes more defects in growth of the InGaN well layer and the GaN barrier layer, the crystal quality of the finally obtained multi-quantum well layer is not ideal, and the light emitting efficiency of the obtained light emitting diode is not high enough.
Disclosure of Invention
The embodiment of the disclosure provides a preparation method of a light emitting diode epitaxial wafer and the light emitting diode epitaxial wafer, which can improve the crystal quality of a finally obtained multiple quantum well layer so as to improve the light emitting efficiency of a light emitting diode. The technical scheme is as follows:
the embodiment of the disclosure provides a preparation method of a light emitting diode epitaxial wafer, which comprises the following steps:
providing a substrate;
growing an n-type layer on the substrate;
alternately growing a plurality of InGaN well layers and GaN barrier layers on the n-type layer to form a multi-quantum well layer;
growing a p-type layer on the multi-quantum well layer;
growing the InGaN well layer in the multiple quantum well layer, comprising:
introducing an In source, a Ga source and an N source into the reaction cavity, growing an InGaN film, closing the In source, the Ga source and the N source, preserving heat for a first set time,
and circulating the steps until the InGaN well layer is obtained.
Optionally, growing the InGaN well layer in the multiple quantum well layer, further comprising:
introducing an In source, a Ga source and an N source into a reaction cavity, growing a first InGaN film, closing the In source, the Ga source and the N source, and preserving heat for a first set time;
introducing an In source, a Ga source and an N source into a reaction cavity, growing a second InGaN film on the first InGaN film, closing the In source, the Ga source and the N source, and preserving heat for a first set time, wherein the In component content of the second InGaN film is higher than that of the first InGaN film;
and circulating the steps until the InGaN well layer is obtained.
Optionally, the heat preservation temperature of the second InGaN thin film is 10-30 ℃ lower than that of the first InGaN thin film.
Optionally, the heat preservation temperature of the first InGaN film is 30-100 ℃.
Optionally, the first InGaN thin film has a growth thickness greater than a growth thickness of the second InGaN thin film.
Optionally, the growth temperature of the second InGaN thin film is 10-30 ℃ lower than that of the first InGaN thin film.
Optionally, growing the GaN barrier layer in the multiple quantum well layer includes:
introducing a Ga source and an N source into the reaction cavity, growing a GaN film, closing the Ga source and the N source, preserving heat for a second set time,
and circulating the steps until the GaN barrier layer is obtained.
Optionally, growing the GaN barrier layer in the multiple quantum well layer, further includes:
introducing a Ga source and an N source into the reaction cavity, growing a first GaN film, closing the source, the Ga source and the N source, and keeping the temperature for a second set time;
introducing a Ga source and an N source into a reaction cavity, growing a second GaN film on the first GaN film, closing the source, the Ga source and the N source, and preserving heat for a second set time, wherein the heat preservation temperature of the second GaN film is 10-50 ℃ higher than that of the first GaN film;
and circulating the steps until the GaN barrier layer is obtained.
The embodiment of the disclosure provides an LED epitaxial wafer, which comprises a substrate, and an n-type layer, a multi-quantum well layer and a p-type layer which are sequentially laminated on the substrate, wherein the multi-quantum well layer comprises a plurality of InGaN well layers and GaN barrier layers which are alternately laminated, and the InGaN well layers are prepared by the preparation method.
Optionally, each InGaN well layer includes a plurality of first InGaN thin film layers and second InGaN thin film layers alternately stacked, and the In component content of the first InGaN thin film layers is lower than that of the second InGaN thin film layers.
The technical scheme provided by the embodiment of the disclosure has the following beneficial effects:
and sequentially growing an n-type layer, a multi-quantum well layer and a p-type layer on the substrate. The multiple quantum well layer comprises a plurality of InGaN well layers and GaN barrier layers which are alternately grown. And when the InGaN well layer In the multi-quantum well layer is grown, introducing an In source, a Ga source and an N source into the reaction cavity, and growing the InGaN film. And then closing the In source, the Ga source and the N source, and keeping the InGaN film at the temperature for a first set time. In the period of closing the In source, the Ga source and the N source, the InGaN film is In a state close to annealing, atoms and molecules In the InGaN film automatically move to a stable state, the stress In the InGaN film can be released, and the overall crystal quality of the InGaN film is improved. The InGaN well layer obtained through the final cycle growth has good crystal quality, the crystal quality of the multiple quantum well layer is improved, and the light emitting efficiency of the light emitting diode is improved finally.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present disclosure, the drawings needed to be used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present disclosure, and it is obvious for those skilled in the art to obtain other drawings based on the drawings without creative efforts.
Fig. 1 is a schematic structural diagram of an led epitaxial wafer according to an embodiment of the present disclosure;
fig. 2 is a schematic structural diagram of an InGaN well layer and a GaN barrier layer in a single period according to an embodiment of the present disclosure;
fig. 3 is a schematic structural diagram of another light emitting diode epitaxial wafer according to an embodiment of the present disclosure;
fig. 4 is a flowchart of a method for manufacturing an epitaxial wafer of a light emitting diode according to an embodiment of the present disclosure;
fig. 5 is a flowchart of another method for manufacturing an epitaxial wafer of a light emitting diode according to an embodiment of the present disclosure.
Detailed Description
To make the objects, technical solutions and advantages of the present disclosure more apparent, embodiments of the present disclosure will be described in detail with reference to the accompanying drawings.
Fig. 1 is a schematic structural diagram of an led epitaxial wafer according to an embodiment of the present disclosure, and as can be seen from fig. 1, an led epitaxial wafer according to an embodiment of the present disclosure includes a substrate 1, and an n-type layer 2, a multiple quantum well layer 3, and a p-type layer 4 sequentially stacked on the substrate 1, where the multiple quantum well layer 3 includes a plurality of InGaN well layers 31 and GaN barrier layers 32 that are alternately stacked.
An n-type layer 2, a multiple quantum well layer 3, and a p-type layer 4 are sequentially grown on a substrate 1. The multiple quantum well layer 3 includes a plurality of InGaN well layers 31 and GaN barrier layers 32 alternately grown. When the InGaN well layer 31 In the multiple quantum well layer 3 is grown, an In source, a Ga source and an N source are introduced into the reaction cavity, and the InGaN thin film is grown. And then closing the In source, the Ga source and the N source, and keeping the InGaN film at the temperature for a first set time. In the period of closing the In source, the Ga source and the N source, the InGaN film is In a state close to annealing, atoms and molecules In the InGaN film automatically move to a stable state, the stress In the InGaN film can be released, and the overall crystal quality of the InGaN film is improved. The InGaN well layer 31 obtained through the final cycle growth has good crystal quality, the crystal quality of the multiple quantum well layer 3 is improved, and the light emitting efficiency of the light emitting diode is improved finally.
Fig. 2 is a schematic structural diagram of a single-cycle InGaN well layer 31 and a GaN barrier layer 32 according to an embodiment of the disclosure, and referring to fig. 2, each InGaN well layer 31 includes a plurality of first InGaN thin film layers 311 and second InGaN thin film layers 312 alternately stacked, and an In component content of the first InGaN thin film layer 311 is lower than an In component content of the second InGaN thin film layer 312.
The first InGaN thin film layers 311 and the second InGaN thin film layers 312 are alternately stacked, and the In content of the first InGaN thin film layers 311 is lower than that of the second InGaN thin film layers 312, and the second InGaN thin film layers 312 are recessed regions of low barrier In the InGaN well layers 31, so that carriers are more easily captured and the possibility of carriers overflowing the InGaN well layers 31 is reduced compared to the first InGaN thin film layers 311. The luminous efficiency of the light-emitting diode is improved.
Alternatively, the thickness of the second InGaN thin film layer 312 may be greater than that of the first InGaN thin film layer 311.
The thickness of the first InGaN thin film layer 311 may be smaller than that of the second InGaN thin film layer 312, and the second InGaN thin film layer 312 may bind more carriers, thereby ensuring the light emitting efficiency of the light emitting diode.
Illustratively, the thickness of the second InGaN thin film layer 312 may be 1-2 times that of the first InGaN thin film layer 311.
The thickness of the second InGaN thin film layer 312 may be 1 to 2 times that of the first InGaN thin film layer 311, and the second InGaN thin film layer 312 may better bind electrons to improve the light emitting efficiency, and the preparation cost of the multiple quantum well layer 3 is also more reasonable.
Illustratively, the composition content of the first InGaN thin film layer 311 may be 0.1-0.3, and the composition content of the second InGaN thin film layer 312 may be 0.5-1. The obtained InGaN well layer 31 has good quality and the light emitting efficiency of the light emitting diode is also high.
Fig. 3 is a schematic structural diagram of another light emitting diode epitaxial wafer according to an embodiment of the present disclosure, and as can be seen from fig. 3, in another implementation manner provided by the present disclosure, the light emitting diode epitaxial wafer may include a substrate 1, and a buffer layer 5, an undoped GaN layer 6, an n-type layer 2, a multi-quantum well layer 3, an electron blocking layer 7, a p-type layer 4, and a p-type contact layer 8 grown on the substrate 1.
Note that the structure of the multiple quantum well layer 3 shown in fig. 3 is the same as the structure of the multiple quantum well layer 3 shown in fig. 1, and the description thereof is omitted.
Alternatively, the substrate 1 may be a sapphire substrate 1. Easy to manufacture and obtain.
Illustratively, the buffer layer 5 may be an AlN buffer layer 5. The crystal quality of the epitaxial thin film grown on the low-temperature buffer layer 5 can be ensured.
Alternatively, the buffer layer 5 may have a thickness of 10 to 30 nm. The lattice mismatch between the n-type GaN layer and the substrate 1 can be reduced, and the growth quality of the epitaxial layer is ensured.
Illustratively, the thickness of the undoped GaN layer 6 may be 1 to 3.5 μm. The quality of the obtained light emitting diode epitaxial wafer is good.
In one implementation provided by the present disclosure, the thickness of the undoped GaN layer 6 may also be 1 μm. The present disclosure is not so limited.
Alternatively, the n-type layer 2 may be an n-type GaN layer, the doping element of the n-type GaN layer may be Si, and the doping concentration of the Si element may be 1 × 1018～1×1019cm-3. The overall quality of the n-type GaN layer is better.
Illustratively, the n-type GaN layer may have a thickness of 2 to 3 μm. The obtained n-type GaN layer has good overall quality.
In one implementation provided by the present disclosure, the n-type GaN layer may have a thickness of 2 μm. The present disclosure is not so limited.
Alternatively, the electron blocking layer 7 may be Mg-doped AlyGa1-yN layers, wherein y ranges from 0.15 to 0.25. The effect of blocking electrons is better.
Illustratively, the thickness of the electron blocking layer 7 may be 30 to 50 nm. The quality of the epitaxial layer 2 as a whole is good.
Optionally, the p-type layer 4 may be a p-type GaN layer, the p-type GaN layer may be doped with Mg, and the thickness of the p-type GaN layer may be 50-80 nm. The obtained p-type GaN layer has good overall quality.
Illustratively, the thickness of the p-type contact layer 8 may be 15 nm.
It should be noted that, in the epitaxial wafer structure shown in fig. 3, compared with the epitaxial wafer structure shown in fig. 1, a buffer layer 5 and a non-doped GaN layer 6 for relieving lattice mismatch are added between the buffer layer 5 and the n-type GaN layer, and an electron blocking layer 7 for blocking electrons from overflowing from the multiple quantum well layer 3 into the p-type GaN layer is added between the multiple quantum well layer 3 and the p-type GaN layer. A p-type contact layer 8 is also grown on the p-type GaN layer. The obtained epitaxial wafer has better quality and luminous efficiency.
Fig. 4 is a flowchart of a method for manufacturing an led epitaxial wafer according to an embodiment of the present disclosure, and as shown in fig. 4, the method for manufacturing an led epitaxial wafer includes:
s101: a substrate is provided.
S102: an n-type layer is grown on the substrate.
S103: and alternately growing a plurality of InGaN well layers and GaN barrier layers on the n-type layer to form a multi-quantum well layer.
Growing an InGaN well layer in a multiple quantum well layer, comprising:
introducing an In source, a Ga source and an N source into the reaction cavity to grow an InGaN film; closing the In source, the Ga source and the N source and keeping the temperature for a first set time; and (4) circulating the steps until an InGaN well layer is obtained.
S104: and growing a p-type layer on the multi-quantum well layer.
And sequentially growing an n-type layer, a multi-quantum well layer and a p-type layer on the substrate. The multiple quantum well layer comprises a plurality of InGaN well layers and GaN barrier layers which are alternately grown. And when the InGaN well layer In the multi-quantum well layer is grown, introducing an In source, a Ga source and an N source into the reaction cavity, and growing the InGaN film. And then closing the In source, the Ga source and the N source, and keeping the InGaN film at the temperature for a first set time. In the period of closing the In source, the Ga source and the N source, the InGaN film is In a state close to annealing, atoms and molecules In the InGaN film automatically move to a stable state, the stress In the InGaN film can be released, and the overall crystal quality of the InGaN film is improved. The InGaN well layer obtained through the final cycle growth has good crystal quality, the crystal quality of the multiple quantum well layer is improved, and the light emitting efficiency of the light emitting diode is improved finally.
Optionally, step S103 further includes:
introducing an In source, a Ga source and an N source into the reaction cavity, growing a first InGaN film, closing the In source, the Ga source and the N source, and preserving heat for a first set time;
introducing an In source, a Ga source and an N source into the reaction cavity, growing a second InGaN film on the first InGaN film, closing the In source, the Ga source and the N source, and preserving heat for a first set time, wherein the In component content of the second InGaN film is higher than that of the first InGaN film;
and (4) circulating the steps until an InGaN well layer is obtained.
The In component content of the first InGaN thin film is lower than that of the second InGaN thin film, and the second InGaN thin film is a low-barrier recessed region In the InGaN well layer, so that carriers are captured more easily than the first InGaN thin film, and the possibility that the carriers overflow the InGaN well layer is reduced. The luminous efficiency of the light-emitting diode is improved. The first InGaN film and the second InGaN film are subjected to approximate annealing treatment during growth, the overall quality can be improved, and the quality of the finally obtained light emitting diode epitaxial wafer is good.
For example, the first set time may be 10 to 100 seconds.
The first setting time is set to the above range, the first InGaN thin film or the second InGaN thin film with relatively stable quality can be obtained, and the crystal quality of the finally obtained multiple quantum well layer is improved.
For example, the holding temperature of the second InGaN thin film may be 10-30 ℃ lower than that of the first InGaN thin film.
The heat preservation temperature of the second InGaN film can be 10-30 ℃ lower than that of the first InGaN film, the possibility that In elements In the second InGaN film are lost due to pyrolysis can be reduced, and the quality of the first InGaN film or the second InGaN film is guaranteed.
Optionally, the heat preservation temperature of the first InGaN film is 30-100 ℃. The obtained first InGaN thin film has good quality.
Illustratively, the first InGaN thin film has a growth thickness greater than that of the second InGaN thin film.
The thickness of the first InGaN thin film layer can be smaller than that of the second InGaN thin film layer, the second InGaN thin film layer can bind more current carriers, and the light emitting efficiency of the light emitting diode is guaranteed.
Optionally, the growth thickness of the first InGaN thin film may be 1.5-3.5 nm.
Optionally, the growth temperature of the second InGaN thin film is 10-30 ℃ lower than that of the first InGaN thin film. An InGaN well layer having good quality and retaining a large amount of In element can be obtained.
For example, on the premise of growing the first InGaN thin film and the second InGaN thin film, the cycle period of the first InGaN thin film and the second InGaN thin film may be 1 to 3 times. The quality of the light-emitting diode epitaxial wafer can be improved while the quality of the light-emitting diode epitaxial wafer is reasonably controlled.
Step S103 may further include: and introducing the Ga source and the N source into the reaction cavity, growing the GaN film, closing the Ga source and the N source and keeping the temperature for a second set time. And circulating the steps until the GaN barrier layer is obtained.
When the GaN barrier layer grows, the GaN film is grown circularly and heat preservation is carried out, so that the quality of the GaN barrier layer is improved, and the crystal quality of the finally obtained multi-quantum well layer is improved.
Optionally, growing the GaN barrier layer in the multiple quantum well layer further includes:
introducing a Ga source and an N source into the reaction cavity, growing a first GaN film, closing the source, the Ga source and the N source, and keeping the temperature for a second set time; introducing a Ga source and an N source into the reaction cavity, growing a second GaN film on the first GaN film, closing the source, the Ga source and the N source, and preserving heat for a second set time, wherein the heat preservation temperature of the second GaN film is 10-50 ℃ higher than that of the first GaN film; and circulating the steps until the GaN barrier layer is obtained.
The heat preservation temperature of the second GaN film is 10-50 ℃ higher than that of the first GaN film, the quality of the second GaN film can be improved, and excessive loss of In the InGaN well layer due to overhigh heat preservation temperature of the first GaN film can be avoided while the quality of the first GaN film is ensured. Further improving the crystal quality of the multiple quantum wells.
Optionally, the heat preservation temperature of the first GaN film can be 30-100 ℃.
The heat preservation temperature of the first GaN film is reasonable, and excessive loss of In the InGaN well layer can not be caused. Further improving the crystal quality of the multiple quantum wells.
Optionally, the first GaN thin film may be grown to a thickness of 4-6 nm. The second GaN thin film may be grown to a thickness of 4-6 nm.
For example, the cycle time of the first GaN film and the second GaN film may be 1 to 3 times on the premise of growing the first GaN film and the second GaN film. The quality of the light-emitting diode epitaxial wafer can be improved while the quality of the light-emitting diode epitaxial wafer is reasonably controlled.
Optionally, the second set time may be 10-100 s.
Fig. 1 is a view of an epitaxial wafer structure of the light emitting diode after step S104 is performed.
Fig. 5 is a flowchart of another method for manufacturing an led epitaxial wafer according to an embodiment of the present disclosure, and as shown in fig. 5, the method for manufacturing an led epitaxial wafer includes:
s201: a substrate is provided.
Wherein the substrate may be a sapphire substrate. Easy to realize and manufacture.
Optionally, step S201 may further include: and treating the surface of the substrate for growing the epitaxial layer for 5-6 min in a hydrogen atmosphere.
For example, when the substrate is processed for growing the surface of the epitaxial layer, the temperature of the reaction chamber may be 1000-1100 ℃, and the pressure of the reaction chamber may be 200-500 torr.
S202: a buffer layer is grown on a substrate.
The buffer layer may be an AlN buffer layer. The AlN layer may be obtained by magnetron sputtering.
Illustratively, the deposition temperature of the AlN layer may be 400 to 800 ℃, the sputtering power may be 3000 to 5000W, and the pressure may be 2 to 20 mtorr. The obtained AlN layer has good quality.
S203: and growing an undoped GaN layer on the buffer layer.
The thickness of the non-doped GaN layer can be 0.5-3 um.
Illustratively, the growth temperature of the non-doped GaN layer can be 1000-1100 ℃, and the growth pressure is controlled at 100-300 torr. The obtained undoped GaN layer has better quality.
S204: an n-type layer is grown on the undoped GaN layer.
Alternatively, the n-type layer may be an n-type GaN layer, the growth temperature of the n-type GaN layer may be 1000 to 1100 ℃, and the growth pressure of the n-type GaN layer may be 100 to 300 Torr.
Optionally, the thickness of the n-type GaN layer can be 0.5-3 um.
S205: and growing a multi-quantum well layer on the n-type GaN layer.
The multiple quantum well layer comprises InGaN well layers and GaN barrier layers which are alternately stacked, the thickness of each InGaN well layer can be 2-3 nm, and the thickness of each GaN barrier layer can be 9-20 nm.
Optionally, in the multiple quantum well layer, the growth temperature of the InGaN well layer and the growth temperature of the InGaN well layer may be 700 to 830 ℃, and the growth temperature of the GaN barrier layer, and the growth temperature of the third GaN barrier layer may be 800 to 960 ℃. The quality of the multiple quantum well layer grown under the condition is good, and the light emitting efficiency of the light emitting diode can be ensured.
The growth conditions, growth method, and structure of the multiple quantum well layer in step S205 are the same as those of the multiple quantum well layer in step S103 in fig. 4. And will not be described in detail herein.
S206: and growing an electron barrier layer on the multi-quantum well layer.
Alternatively, the electron blocking layer may be Mg-doped AlyGa1-yN layers, wherein y ranges from 0.2 to 0.5. The effect of blocking electrons is better.
The growth thickness of the electron blocking layer can be 20-100 nm.
The growth temperature of the electron blocking layer can be 800-1000 ℃, and the growth pressure of the electron blocking layer can be 100-300 Torr. The quality of the electron blocking layer grown under the condition is good, and the improvement of the luminous efficiency of the light-emitting diode is facilitated.
S207: a p-type layer is grown on the electron blocking layer.
Optionally, the p-type layer is a p-type GaN layer, the growth pressure of the p-type GaN layer can be 200-600 Torr, and the growth temperature of the p-type GaN layer can be 800-1000 ℃.
S208: a p-type contact layer is grown on the p-type layer.
Alternatively, the growth pressure of the p-type contact layer may be 100 to 300Torr, and the growth temperature of the p-type contact layer may be 800 to 1000 ℃.
The method for manufacturing the light emitting diode epitaxial wafer shown in fig. 5 provides a more detailed method for growing the light emitting diode epitaxial wafer compared to the method for manufacturing the light emitting diode shown in fig. 4.
The structure of the led epitaxial wafer after the step S208 is completed can be seen in fig. 3.
It should be noted that, in the embodiments of the present disclosure, a VeecoK465iorC4 orrbmcvd (metalorganic chemical vapor deposition) apparatus is used to realize the growth of the LEDA method. By using high-purity H2(Hydrogen) or high purity N2(Nitrogen) or high purity H2And high purity N2The mixed gas of (2) is used as a carrier gas, high-purity NH3As an N source, trimethyl gallium (TMGa) and triethyl gallium (TEGa) as gallium sources, trimethyl indium (TMIn) as indium sources, silane (SiH4) as an N-type dopant, trimethyl aluminum (TMAl) as an aluminum source, and magnesium dicylocene (CP)2Mg) as a P-type dopant.
The above description is only exemplary of the present disclosure and is not intended to limit the present disclosure, so that any modification, equivalent replacement, or improvement made within the spirit and principle of the present disclosure should be included in the scope of the present disclosure.

Claims (5)

1. A preparation method of a light emitting diode epitaxial wafer comprises the following steps:
providing a substrate;
growing an n-type layer on the substrate;
alternately growing a plurality of InGaN well layers and GaN barrier layers on the n-type layer to form a multi-quantum well layer;
growing a p-type layer on the multi-quantum well layer;
wherein growing the InGaN well layer in the multiple quantum well layer comprises:
introducing an In source, a Ga source and an N source into a reaction cavity, growing a first InGaN film, closing the In source, the Ga source and the N source, preserving heat for a first set time, wherein the heat preservation temperature of the first InGaN film is 30-100 ℃,
introducing an In source, a Ga source and an N source into a reaction cavity, growing a second InGaN film on the first InGaN film, closing the In source, the Ga source and the N source, and preserving heat for a first set time, wherein the In component content of the second InGaN film is higher than that of the first InGaN film, the heat preservation temperature of the second InGaN film is 10-30 ℃ lower than that of the first InGaN film, and the growth thickness of the first InGaN film is larger than that of the second InGaN film;
and circulating the steps until the InGaN well layer is obtained.
2. The method according to claim 1, wherein growing the GaN barrier layers in the multiple quantum well layer comprises:
introducing a Ga source and an N source into the reaction cavity, growing a GaN film, closing the Ga source and the N source, preserving heat for a second set time,
and circulating the steps until the GaN barrier layer is obtained.
3. The method according to claim 2, wherein growing the GaN barrier layers in the multiple quantum well layer further comprises:
introducing a Ga source and an N source into the reaction cavity, growing a first GaN film, closing the Ga source and the N source, and keeping the temperature for a second set time;
introducing a Ga source and an N source into a reaction cavity, growing a second GaN film on the first GaN film, closing the Ga source and the N source, and preserving heat for a second set time, wherein the heat preservation temperature of the second GaN film is 10-50 ℃ higher than that of the first GaN film;
and circulating the steps until the GaN barrier layer is obtained.
4. An LED epitaxial wafer, characterized in that the LED epitaxial wafer is prepared by the preparation method of the LED epitaxial wafer according to claim 1, the LED epitaxial wafer comprises a substrate, and an n-type layer, a multi-quantum well layer and a p-type layer which are sequentially laminated on the substrate, the multi-quantum well layer comprises a plurality of InGaN well layers and GaN barrier layers which are alternately laminated, and the InGaN well layers are prepared by the preparation method according to any one of claims 1 to 3.
5. The light-emitting diode epitaxial wafer as claimed In claim 4, wherein each InGaN well layer comprises a plurality of first InGaN thin film layers and second InGaN thin film layers alternately stacked, the first InGaN thin film layers having an In component content lower than that of the second InGaN thin film layers.
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