CN109616561B - Deep ultraviolet LED chip, deep ultraviolet LED epitaxial wafer and preparation method thereof - Google Patents
Deep ultraviolet LED chip, deep ultraviolet LED epitaxial wafer and preparation method thereof Download PDFInfo
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- 230000004888 barrier function Effects 0.000 claims abstract description 28
- 238000000034 method Methods 0.000 claims description 25
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 16
- 229910052594 sapphire Inorganic materials 0.000 claims description 14
- 239000010980 sapphire Substances 0.000 claims description 14
- 229910052757 nitrogen Inorganic materials 0.000 claims description 8
- 239000012159 carrier gas Substances 0.000 claims description 5
- 230000000737 periodic effect Effects 0.000 claims description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical group N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical group [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 4
- 229910000077 silane Inorganic materials 0.000 claims description 4
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical group C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 claims description 4
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical group C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 claims description 4
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical group [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 3
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- 239000011777 magnesium Substances 0.000 claims description 3
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- 229910010271 silicon carbide Inorganic materials 0.000 description 1
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
- H01L33/325—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen characterised by the doping materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
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Abstract
The invention discloses a deep ultraviolet LED chip, a deep ultraviolet LED epitaxial wafer and a preparation method thereof, wherein the preparation method comprises the following steps: growing an AlGaN buffer layer on a substrate, and growing an N-type AlGaN layer on the AlGaN buffer layer; growing an N-type AlGaN layer with gradually changed Al components on the N-type AlGaN layer, and growing Al on the N-type AlGaN layer with gradually changed Al components0.5Ga0.5N/Al0.15Ga0.85N active region; in Al0.5Ga0.5N/Al0.15Ga0.85And growing an AlGaN barrier layer on the N active region, and growing a P-type GaN layer on the AlGaN barrier layer. According to the technical scheme disclosed by the application, the N-type AlGaN layer with the gradually-changed grown Al component is arranged before the active region is grown, so that the energy band structure of the active region is not changed, and the luminous efficiency of the deep ultraviolet LED chip can be improved.
Description
Technical Field
The invention relates to the technical field of photoelectricity, in particular to a deep ultraviolet LED chip, a deep ultraviolet LED epitaxial wafer and a preparation method of the deep ultraviolet LED epitaxial wafer.
Background
With the continuous development of semiconductor technology, deep ultraviolet LEDs (Light Emitting diodes) are widely used in the fields of air and water purification, disinfection, ultraviolet medical treatment, high-density optical storage systems, full-color displays, solid-state white Light illumination, and the like.
Considering that the internal quantum efficiency and the luminous efficiency of an AlGaN-based deep ultraviolet LED light source with high Al component are lower, in order to improve the internal quantum efficiency of an AlGaN-based deep ultraviolet LED chip, at present, a P-type layer with gradually changed Al component grows on an AlGaN active region to weaken the polarization electric field of the active region when the aim of inhibiting the quantum confinement Stark effect is frequently taken to prepare an AlGaN-based deep ultraviolet LED epitaxial wafer, so that the internal quantum efficiency of the AlGaN-based deep ultraviolet LED chip is improved. However, when a P-type layer with gradually changed Al composition is grown on the AlGaN active region, the change of the growth conditions (temperature and time) may cause the migration of Al in the AlGaN active region, which may cause the change of the Al composition in the active region, and the change of the Al composition in the active region may cause the change of the energy band structure of the active region, thereby affecting the light emitting efficiency of the finally prepared deep ultraviolet LED chip.
In summary, how to minimize the change of Al component in the active region in the process of preparing the deep ultraviolet LED epitaxial wafer so as to improve the light emitting efficiency of the deep ultraviolet LED chip is a technical problem to be solved urgently by those skilled in the art.
Disclosure of Invention
In view of this, the present invention provides a deep ultraviolet LED chip, a deep ultraviolet LED epitaxial wafer, and a method for manufacturing the deep ultraviolet LED epitaxial wafer, so as to reduce the change of Al component in an active region as much as possible during the process of manufacturing the deep ultraviolet LED epitaxial wafer, thereby improving the light emitting efficiency of the deep ultraviolet LED chip.
In order to achieve the above purpose, the invention provides the following technical scheme:
a preparation method of a deep ultraviolet LED epitaxial wafer comprises the following steps:
growing an AlGaN buffer layer on a substrate, and growing an N-type AlGaN layer on the AlGaN buffer layer;
growing an N-type AlGaN layer with gradually changed Al components on the N-type AlGaN layer, and growing Al on the N-type AlGaN layer with gradually changed Al components0.5Ga0.5N/Al0.15Ga0.85N active region;
in the Al0.5Ga0.5N/Al0.15Ga0.85And growing an AlGaN barrier layer on the N active region, and growing a P-type GaN layer on the AlGaN barrier layer to prepare the deep ultraviolet LED epitaxial wafer.
Preferably, before growing the AlGaN buffer layer on the substrate, the method further includes:
and placing the substrate in an MOCVD reaction chamber to prepare the deep ultraviolet LED epitaxial wafer by using an MOCVD method.
Preferably, when the deep ultraviolet LED epitaxial wafer is prepared by using an MOCVD method, the Ga source is trimethyl gallium, the Al source is trimethyl aluminum, the nitrogen source is ammonia gas, the carrier gas is hydrogen gas, the N-type doping source is silane, and the P-type doping source is magnesium metallocene.
The deep ultraviolet LED epitaxial wafer comprises a substrate, an AlGaN buffer layer, an N-type AlGaN layer with gradually changed Al components, and an Al layer, wherein the AlGaN buffer layer, the N-type AlGaN layer and the Al layer are sequentially arranged on the substrate from bottom to top0.5Ga0.5N/Al0.15Ga0.85The N active region, the AlGaN barrier layer and the P-type GaN layer.
Preferably, the N-type AlGaN layer with gradually changed Al composition comprises 10 AlGaN layers, and the first layer and the tenth layer are both Al0.65Ga0.35N layer, the second to ninth layers are AlxGa1-xAnd x is more than or equal to 0.2 and less than or equal to 0.4, wherein x from the second layer to the fifth layer is gradually reduced, x from the fifth layer to the sixth layer is equal, and x from the sixth layer to the ninth layer is gradually increased.
Preferably, the doping concentration in the Al-composition-graded N-type AlGaN layer is 3 x 1018cm-3。
Preferably, the Al is0.5Ga0.5N/Al0.15Ga0.85The N active region is 5 periodic structures, each periodic structure comprises Al0.5Ga0.5N quantum barrier layer and Al0.15Ga0.85And an N quantum well layer.
Preferably, the substrate is a sapphire substrate.
Preferably, the sapphire substrate is a c-plane sapphire substrate.
A deep ultraviolet LED chip comprises the deep ultraviolet LED epitaxial wafer.
The invention provides a deep ultraviolet LED chip, a deep ultraviolet LED epitaxial wafer and a preparation method thereof, wherein the preparation method of the deep ultraviolet LED epitaxial wafer comprises the following steps: growing an AlGaN buffer layer on a substrate, and growing an N-type AlGaN layer on the AlGaN buffer layer; growing an N-type AlGaN layer with gradually changed Al components on the N-type AlGaN layer, and growing an N-type AlGaN layer with gradually changed Al components on the N-type AlGaN layerGrowing Al on the type AlGaN layer0.5Ga0.5N/Al0.15Ga0.85N active region; in Al0.5Ga0.5N/Al0.15Ga0.85And growing an AlGaN barrier layer on the N active region, and growing a P-type GaN layer on the AlGaN barrier layer to prepare the deep ultraviolet LED epitaxial wafer.
According to the technical scheme disclosed by the application, an AlGaN buffer layer, an N-type AlGaN layer and an N-type AlGaN layer with gradually changed Al components grow on a substrate in sequence, and then Al grows on the N-type AlGaN layer with gradually changed Al components in sequence0.5Ga0.5N/Al0.15Ga0.85The N active region, the AlGaN barrier layer and the P-type GaN layer are arranged in front of the active region, and therefore when the N-type AlGaN layer with the gradually-changed Al component grows, the change of the growth condition does not affect the active region which does not grow, the Al component in the active region does not change due to the change of the growth condition, correspondingly, the change of the energy band structure of the active region is not caused, and the luminous efficiency of the finally prepared deep ultraviolet LED chip can be improved.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the provided drawings without creative efforts.
Fig. 1 is a flowchart of a method for manufacturing a deep ultraviolet LED epitaxial wafer according to an embodiment of the present invention;
fig. 2 is a schematic structural diagram of a deep ultraviolet LED epitaxial wafer according to an embodiment of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Referring to fig. 1, a flowchart of a method for manufacturing a deep ultraviolet LED epitaxial wafer according to an embodiment of the present invention is shown, where the method includes:
s11: an AlGaN buffer layer is grown on a substrate, and an N-type AlGaN layer is grown on the AlGaN buffer layer.
Cleaning the substrate, growing an AlGaN buffer layer on the substrate, and growing an N-type AlGaN layer on the AlGaN buffer layer. The AlGaN buffer layer is used for buffering lattice mismatch between the substrate and the N-type AlGaN layer, so that cracking of a finally prepared deep ultraviolet LED epitaxial wafer is prevented as much as possible.
In order to achieve a better buffer effect, the AlGaN buffer layer may be undoped Al0.5Ga0.5An N buffer layer, which may have a thickness in a range of 1.5-1.7 μm, inclusive. In addition, the grown N-type AlGaN layer may be specifically N-type Al0.5Ga0.5N layer with thickness of about 3 μm and doping concentration of 5 × 1018cm-3。
S12: growing an N-type AlGaN layer with gradually changed Al components on the N-type AlGaN layer, and growing Al on the N-type AlGaN layer with gradually changed Al components0.5Ga0.5N/Al0.15Ga0.85And N active regions.
After the N-type AlGaN layer is grown, the N-type AlGaN layer with the gradually changed Al component is grown on the N-type AlGaN layer, and Al is grown on the N-type AlGaN layer with the gradually changed Al component0.5Ga0.5N/Al0.15Ga0.85An N active region (which may also be referred to as a multiple quantum well structure).
Wherein, the N-type AlGaN layer with gradually changed Al components can effectively inhibit quantum confinement Stark effect and weaken Al0.5Ga0.5N/Al0.15Ga0.85And N is the polarization electric field of the active region, so that the internal quantum efficiency of the finally obtained deep ultraviolet LED chip is improved. In addition, Al grows as the N-type AlGaN layer with gradually changed Al components grows0.5Ga0.5N/Al0.15Ga0.85The N active region is performed before, therefore, when an N type AlGaN layer with gradually changed Al composition is grown, the non-grown Al can be reduced0.5Ga0.5N/Al0.15Ga0.85Influence of N active region to reduce Al0.5Ga0.5N/Al0.15Ga0.85The migration of Al component in the N active region can be prevented0.5Ga0.5N/Al0.15Ga0.85The energy band structure in the N active region is changed, so that the luminous efficiency of the finally prepared deep ultraviolet LED chip can be improved.
S13: in Al0.5Ga0.5N/Al0.15Ga0.85And growing an AlGaN barrier layer on the N active region, and growing a P-type GaN layer on the AlGaN barrier layer to prepare the deep ultraviolet LED epitaxial wafer.
After the growth of Al0.5Ga0.5N/Al0.15Ga0.85After the N active region, in Al0.5Ga0.5N/Al0.15Ga0.85Growing an AlGaN barrier layer (specifically, an intrinsic AlGaN barrier layer) on the N active region, and growing a P-type GaN layer on the AlGaN barrier layer to prepare the deep ultraviolet LED epitaxial wafer, wherein the thickness of the P-type GaN layer can be about 10nm, and the doping concentration of the P-type GaN layer can be 1 x 1018cm-3。
AlGaN barrier layer for preventing electrons from Al0.5Ga0.5N/Al0.15Ga0.85The N active region overflows into the P-type GaN layer to affect holes in the P-type GaN layer.
As can be seen from the above process for preparing the deep ultraviolet LED epitaxial wafer, the quantum confinement stark effect is not suppressed by growing the P-type layer with the gradually-changed Al composition on the active region, but by growing the N-type AlGaN layer with the gradually-changed Al composition, and then growing Al on the N-type AlGaN layer with the gradually-changed Al composition0.5Ga0.5N/Al0.15Ga0.85The N active region is used for inhibiting quantum confinement Stark effect, so that Al in growth of P-type GaN layer can be reduced0.5Ga0.5N/Al0.15Ga0.85N active region, therebySo as to improve the luminous efficiency of the finally prepared deep ultraviolet LED chip.
According to the technical scheme disclosed by the application, an AlGaN buffer layer, an N-type AlGaN layer and an N-type AlGaN layer with gradually changed Al components grow on a substrate in sequence, and then Al grows on the N-type AlGaN layer with gradually changed Al components in sequence0.5Ga0.5N/Al0.15Ga0.85The N active region, the AlGaN barrier layer and the P-type GaN layer are arranged in front of the active region, and therefore when the N-type AlGaN layer with the gradually-changed Al component grows, the change of the growth condition does not affect the active region which does not grow, the Al component in the active region does not change due to the change of the growth condition, correspondingly, the change of the energy band structure of the active region is not caused, and the luminous efficiency of the finally prepared deep ultraviolet LED chip can be improved.
The preparation method of the deep ultraviolet LED epitaxial wafer provided by the embodiment of the invention can further comprise the following steps before the AlGaN buffer layer grows on the substrate:
and placing the substrate in an MOCVD reaction chamber to prepare the deep ultraviolet LED epitaxial wafer by using an MOCVD method.
The deep ultraviolet LED epitaxial wafer can be prepared by using MOCVD (Metal-Organic Chemical Vapor Deposition) method. Specifically, a cleaned substrate is placed in an MOCVD reaction chamber, high-temperature firing is carried out on the substrate by introducing high-purity carrier gas at the temperature of about 1090 ℃, then a Ga source, an Al source and a nitrogen source are introduced at the temperature of about 530 ℃ to grow a low-temperature AlGaN buffer layer, and after the AlGaN buffer layer is grown, the temperature is raised to about 1050 ℃ and is kept constant for about 6min, so that the AlGaN buffer layer is recrystallized; then, introducing a Ga source, an Al source, a nitrogen source and an N-type doping source at the temperature of about 1050 ℃ to grow an N-type AlGaN layer; after the N-type AlGaN layer is grown, growing the N-type AlGaN layer with gradually changed Al components; then, the temperature is reduced to about 1020 ℃, and Ga source, Al source and nitrogen source are introduced to grow Al0.5Ga0.5N/Al0.15Ga0.85The N active region is cooled to about 990 ℃, an AlGaN barrier layer is grown, and a Ga source, a nitrogen source and a P type are introducedDoping a source to grow a P-type GaN layer on the AlGaN barrier layer, and finally, annealing at the temperature of about 700 ℃ for 20min to obtain the P-type GaN layer with high hole concentration.
The deep ultraviolet LED epitaxial wafer prepared by the MOCVD method has the characteristics of easy growth control, large-scale production, large epitaxial layer area, good uniformity and the like.
According to the preparation method of the deep ultraviolet LED epitaxial wafer, when the deep ultraviolet LED epitaxial wafer is prepared by using an MOCVD method, the used Ga source can be trimethyl gallium, the Al source can be trimethyl aluminum, the nitrogen source can be ammonia gas, the carrier gas can be hydrogen gas, the N-type doping source can be silane, and the P-type doping source can be magnesium metallocene.
When the deep ultraviolet LED epitaxial wafer is prepared by using an MOCVD method, the Ga source can be trimethyl gallium, the Al source can be trimethyl aluminum, the nitrogen source can be ammonia gas, the carrier gas can be hydrogen gas, the N-type doping source can be silane, and the P-type doping source can be magnesium chloride, so that the deep ultraviolet LED epitaxial wafer with high purity and excellent performance can be prepared.
An embodiment of the present invention further provides a deep ultraviolet LED epitaxial wafer, specifically referring to fig. 2, which shows a schematic structural diagram of the deep ultraviolet LED epitaxial wafer provided in the embodiment of the present invention, and the deep ultraviolet LED epitaxial wafer may include a substrate 1, and an AlGaN buffer layer 2, an N-type AlGaN layer 3, an N-type AlGaN layer 4 with gradually changed Al components, and an Al layer that are sequentially located on the substrate 1 from bottom to top0.5Ga0.5N/Al0.15Ga0.85N active region 5, AlGaN barrier layer 6, P type GaN layer 7.
The deep ultraviolet LED epitaxial wafer comprises a substrate 1, an AlGaN buffer layer 2 positioned on the surface of the substrate 1, an N-type AlGaN layer 3 positioned on the surface of the AlGaN buffer layer 2, an Al-composition-gradient N-type AlGaN layer 4 positioned on the surface of the N-type AlGaN layer 3, and Al positioned on the surface of the Al-composition-gradient N-type AlGaN layer 40.5Ga0.5N/Al0.15Ga0.85N active region 5, located at Al0.5Ga0.5N/Al0.15Ga0.85An AlGaN barrier layer 6 on the surface of the N active region 5, and a P-type GaN layer 7 on the surface of the AlGaN barrier layer 6.
Wherein Al component is gradually changed into N typeThe AlGaN layer 4 can suppress the quantum confinement Stark effect to weaken Al0.5Ga0.5N/Al0.15Ga0.85And the polarization electric field of the N active region 5 improves the internal quantum efficiency of the deep ultraviolet LED epitaxial wafer and the finally obtained deep ultraviolet LED chip. In addition, the N-type AlGaN layer 4 with gradually changed Al components is positioned on the N-type AlGaN layer 3 and Al0.5Ga0.5N/Al0.15Ga0.85And the N active regions 5 are arranged between the N active regions, so that the influence on the active regions when the N type AlGaN layer 4 with gradually changed Al components and the P type GaN layer 7 are grown can be reduced, and the luminous efficiency of the deep ultraviolet LED chip can be improved.
In the deep ultraviolet LED epitaxial wafer provided in the embodiment of the present invention, the N-type AlGaN layer 4 with gradually changed Al composition may include 10 AlGaN layers, and the first layer and the tenth layer are both Al layers0.65Ga0.35N layer, the second to ninth layers are AlxGa1-xAnd x is more than or equal to 0.2 and less than or equal to 0.4, wherein x from the second layer to the fifth layer is gradually reduced, x from the fifth layer to the sixth layer is equal, and x from the sixth layer to the ninth layer is gradually increased.
The N-type AlGaN layer 4 with the gradually changed Al composition may include 10 AlGaN layers, each of which may have a thickness of 11nm (correspondingly, the N-type AlGaN layer 4 with the gradually changed Al composition has a thickness of 110nm), wherein the first layer and the tenth layer may each be Al layers0.65Ga0.35The N layer, the second to ninth layers may be AlxGa1-xAnd x is more than or equal to 0.2 and less than or equal to 0.4, wherein x from the second layer to the fifth layer is gradually reduced, x from the fifth layer to the sixth layer is equal, and x from the sixth layer to the ninth layer is gradually increased. Specifically, the second layer to the ninth layer may be, in order: al (Al)0.4Ga0.6N layer, Al0.35Ga0.65N layer, Al0.3Ga0.7N layer, Al0.25Ga0.75N layer, Al0.25Ga0.75N layer, Al0.3Ga0.7N layer, Al0.35Ga0.65N layer, Al0.4Ga0.6And N layers. Of course, Al contained in the second to ninth layers may be usedxGa1-xThe N layers set other specific x values.
It is to be noted that the Al componentThe first layer of the gradually changed N-type AlGaN layer 4 is contacted with the N-type AlGaN layer 3, and the tenth layer is contacted with Al0.5Ga0.5N/Al0.15Ga0.85The N active regions 5 are in contact.
According to the deep ultraviolet LED epitaxial wafer provided by the embodiment of the invention, the doping concentration in the N-type AlGaN layer 4 with gradually changed Al components can be 3 x 1018cm-3。
The N-type AlGaN layer 4 with gradually changed Al components can adopt polarized doping, and the doping concentration can be 3 multiplied by 1018cm-3。
The deep ultraviolet LED epitaxial wafer provided by the embodiment of the invention is Al0.5Ga0.5N/Al0.15Ga0.85The N active region 5 may be a 5-period structure, each period structure including Al0.5Ga0.5N quantum barrier layer and Al0.15Ga0.85And an N quantum well layer.
Al0.5Ga0.5N/Al0.15Ga0.85The N active region 5 may be a 5-period structure, and each period structure may include Al therein0.5Ga0.5N quantum barrier layer and Al0.15Ga0.85N quantum well layer, i.e. in Al0.5Ga0.5N/Al0.15Ga0.85In the N active region 5, Al0.5Ga0.5N quantum barrier layer and Al0.15Ga0.85The N quantum well layers were alternately grown for 5 periods. Wherein, Al0.5Ga0.5The thickness of the N quantum barrier layer can be 10nm, and Al0.15Ga0.85The thickness of the N quantum well layer may be 3 nm.
Of course, Al0.5Ga0.5N/Al0.15Ga0.85The N active region 5 may also be of other periodic structures.
According to the deep ultraviolet LED epitaxial wafer provided by the embodiment of the invention, the substrate 1 can be a sapphire substrate.
The substrate 1 used by the deep ultraviolet LED epitaxial wafer can be a sapphire substrate, the production technology is mature, the quality of the prepared deep ultraviolet LED epitaxial wafer is good, and the stability of the sapphire substrate is high, so that the deep ultraviolet LED epitaxial wafer can be applied to a high-temperature growth process, and the sapphire substrate is high in mechanical strength and easy to process and clean.
Of course, silicon carbide may also be utilized as the substrate 1 in deep ultraviolet LED epitaxial wafers.
According to the deep ultraviolet LED epitaxial wafer provided by the embodiment of the invention, the sapphire substrate can be a c-plane sapphire substrate.
The sapphire substrate used in the deep ultraviolet LED epitaxial wafer can be a c-plane sapphire substrate specifically, so that the deep ultraviolet LED epitaxial wafer with better quality can be grown.
It should be noted that, the preparation method of the deep ultraviolet LED epitaxial wafer provided in the embodiment of the present invention and the descriptions of the relevant portions in the deep ultraviolet LED epitaxial wafer provided in the embodiment of the present invention may be correspondingly referred to each other, and are not described herein again.
The embodiment of the invention also provides a deep ultraviolet LED chip which comprises any one of the deep ultraviolet LED epitaxial wafers.
Any of the deep ultraviolet LED epitaxial wafers described above can be applied to a deep ultraviolet LED chip.
Any one of the deep ultraviolet LED epitaxial wafers comprises the N-type AlGaN layer with the gradually changed Al component, so that the quantum confinement Stark effect can be inhibited, and the internal quantum efficiency of the deep ultraviolet LED chip can be improved. In addition, the N-type AlGaN layer with the gradually changed Al component is arranged between the N-type AlGaN layer and the Al0.5Ga0.5N/Al0.15Ga0.85Between the N active regions, therefore, Al can be reduced when growing the N-type AlGaN layer and the P-type GaN layer with gradually changed Al components0.5Ga0.5N/Al0.15Ga0.85N active region, thereby improving the luminous efficiency of the deep ultraviolet LED chip.
It is noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Furthermore, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include elements inherent in the list. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other identical elements in a process, method, article, or apparatus that comprises the element. In addition, parts of the above technical solutions provided in the embodiments of the present invention that are consistent with the implementation principles of the corresponding technical solutions in the prior art are not described in detail, so as to avoid redundant description.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (9)
1. A preparation method of a deep ultraviolet LED epitaxial wafer is characterized by comprising the following steps:
growing an AlGaN buffer layer on a substrate, and growing an N-type AlGaN layer on the AlGaN buffer layer;
growing an N-type AlGaN layer with gradually changed Al components on the N-type AlGaN layer, and growing Al on the N-type AlGaN layer with gradually changed Al components0.5Ga0.5N/Al0.15Ga0.85N active region; the N-type AlGaN layer with gradually changed Al components comprises 10 AlGaN layers, and the first layer and the tenth layer are both Al0.65Ga0.35N layer, the second to ninth layers are AlxGa1-xThe x is more than or equal to 0.2 and less than or equal to 0.4, wherein the x from the second layer to the fifth layer is gradually reduced, the x from the fifth layer to the sixth layer is equal, and the x from the sixth layer to the ninth layer is gradually increased;
in the Al0.5Ga0.5N/Al0.15Ga0.85And growing an AlGaN barrier layer on the N active region, and growing a P-type GaN layer on the AlGaN barrier layer to prepare the deep ultraviolet LED epitaxial wafer.
2. The method for preparing the deep ultraviolet LED epitaxial wafer according to claim 1, wherein before growing the AlGaN buffer layer on the substrate, the method further comprises the following steps:
and placing the substrate in an MOCVD reaction chamber to prepare the deep ultraviolet LED epitaxial wafer by using an MOCVD method.
3. The method for preparing the deep ultraviolet LED epitaxial wafer according to claim 2, wherein when the deep ultraviolet LED epitaxial wafer is prepared by an MOCVD method, the Ga source is trimethyl gallium, the Al source is trimethyl aluminum, the nitrogen source is ammonia gas, the carrier gas is hydrogen gas, the N-type doping source is silane, and the P-type doping source is magnesium metallocene.
4. The deep ultraviolet LED epitaxial wafer is characterized by comprising a substrate, an AlGaN buffer layer, an N-type AlGaN layer with gradually changed Al components, and Al, wherein the AlGaN buffer layer, the N-type AlGaN layer and the Al are sequentially positioned on the substrate from bottom to top0.5Ga0.5N/Al0.15Ga0.85The GaN-based light-emitting diode comprises an N active region, an AlGaN barrier layer and a P-type GaN layer;
the N-type AlGaN layer with gradually changed Al components comprises 10 AlGaN layers, and the first layer and the tenth layer are both Al0.65Ga0.35N layer, the second to ninth layers are AlxGa1-xAnd x is more than or equal to 0.2 and less than or equal to 0.4, wherein x from the second layer to the fifth layer is gradually reduced, x from the fifth layer to the sixth layer is equal, and x from the sixth layer to the ninth layer is gradually increased.
5. The deep ultraviolet LED epitaxial wafer of claim 4, wherein the doping concentration in the Al-composition graded N-type AlGaN layer is 3 x 1018cm-3。
6. The deep ultraviolet LED epitaxial wafer of claim 4, wherein the Al is0.5Ga0.5N/Al0.15Ga0.85The N active region is 5 periodic structures, each periodic structure comprises Al0.5Ga0.5N quantum barrierLayer and Al0.15Ga0.85And an N quantum well layer.
7. The deep ultraviolet LED epitaxial wafer of claim 4, wherein the substrate is a sapphire substrate.
8. The deep ultraviolet LED epitaxial wafer of claim 7, wherein the sapphire substrate is a c-plane sapphire substrate.
9. A deep ultraviolet LED chip, characterized by comprising the deep ultraviolet LED epitaxial wafer according to any one of claims 4 to 8.
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| CN110165030B (en) * | 2019-04-24 | 2022-04-22 | 华南师范大学 | Deep ultraviolet LED illuminator based on AlGaN |
| CN110112270A (en) * | 2019-05-10 | 2019-08-09 | 马鞍山杰生半导体有限公司 | Deep ultraviolet LED epitaxial wafer and preparation method thereof and deep ultraviolet LED |
| CN110459655A (en) * | 2019-08-21 | 2019-11-15 | 苏州紫灿科技有限公司 | A kind of quantum builds the deep ultraviolet LED and preparation method of doping |
| CN110993757B (en) * | 2019-12-30 | 2023-10-27 | 广东省半导体产业技术研究院 | Light-emitting diode and preparation method thereof |
| CN111244234A (en) * | 2020-03-06 | 2020-06-05 | 山西中科潞安紫外光电科技有限公司 | Deep ultraviolet LED epitaxial wafer capable of improving n-type ohmic contact |
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