CN110085713B - Multi-quantum well light-emitting diode with insertion layer and preparation method thereof - Google Patents
Multi-quantum well light-emitting diode with insertion layer and preparation method thereof Download PDFInfo
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- CN110085713B CN110085713B CN201910478633.6A CN201910478633A CN110085713B CN 110085713 B CN110085713 B CN 110085713B CN 201910478633 A CN201910478633 A CN 201910478633A CN 110085713 B CN110085713 B CN 110085713B
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- 238000003780 insertion Methods 0.000 title claims abstract description 30
- 230000037431 insertion Effects 0.000 title claims abstract description 30
- 238000002360 preparation method Methods 0.000 title claims abstract description 8
- 239000000463 material Substances 0.000 claims abstract description 34
- 230000004888 barrier function Effects 0.000 claims abstract description 30
- 239000004065 semiconductor Substances 0.000 claims description 47
- 239000000758 substrate Substances 0.000 claims description 14
- 229910052961 molybdenite Inorganic materials 0.000 claims description 11
- 229910052982 molybdenum disulfide Inorganic materials 0.000 claims description 11
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 9
- 230000000903 blocking effect Effects 0.000 claims description 9
- 229910021389 graphene Inorganic materials 0.000 claims description 9
- 239000013078 crystal Substances 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 7
- 239000012535 impurity Substances 0.000 claims description 5
- 230000008569 process Effects 0.000 claims description 5
- 238000005530 etching Methods 0.000 claims description 4
- 238000000137 annealing Methods 0.000 claims description 3
- 238000005229 chemical vapour deposition Methods 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 238000006243 chemical reaction Methods 0.000 abstract description 5
- 238000010791 quenching Methods 0.000 abstract description 5
- 230000000171 quenching effect Effects 0.000 abstract description 5
- 230000005540 biological transmission Effects 0.000 abstract description 2
- 230000009643 growth defect Effects 0.000 abstract 2
- 238000002347 injection Methods 0.000 abstract 1
- 239000007924 injection Substances 0.000 abstract 1
- 230000007547 defect Effects 0.000 description 7
- 239000000969 carrier Substances 0.000 description 6
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
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- CWQXQMHSOZUFJS-UHFFFAOYSA-N molybdenum disulfide Chemical compound S=[Mo]=S CWQXQMHSOZUFJS-UHFFFAOYSA-N 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000004073 vulcanization Methods 0.000 description 1
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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Abstract
The application provides a multi-quantum well light-emitting diode with an insertion layer and a preparation method thereof, wherein the two-dimensional functional material insertion layer is added between a well layer and a barrier layer of a multi-quantum well active layer, the light transmission is good, the growth defect of an epitaxial layer can be blocked, the electron hole quenching caused by the growth defect between the well layer and the barrier layer is effectively avoided, the electro-optical conversion heat loss is reduced, meanwhile, the electron overflow is avoided by the insertion layer, the carrier injection efficiency is improved, the light-emitting diode is high in brightness, long in service life, high in electro-optical conversion efficiency, energy-saving and environment-friendly.
Description
Technical Field
The invention belongs to the field of Light Emitting Diodes (LEDs), and particularly relates to a multi-quantum well LED with an insertion layer and a preparation method thereof.
Background
In the prior art, a multi-quantum well light emitting diode generally adopts a GaN-based material as a quantum well layer material and a barrier layer material, but other elements are generally doped in the well layer, so that lattice distortion is caused, defects are caused by the difference of lattice parameters of the well layer and the barrier layer, and the defects are accumulated continuously after the well layer and the barrier layer grow periodically. In addition, in order to ensure the doping amount of the doping element, the well layer and the barrier layer often need different epitaxial conditions, such as controlling temperature, pressure, source gas composition, and the like, and different process parameters may also aggravate the formation of defects. These defects trap carriers, causing quenching of the carriers, reducing the electro-optic conversion efficiency of the quantum well.
Disclosure of Invention
In order to solve the problems in the prior art, the invention provides a multi-quantum well light emitting diode with an insertion layer, and the scheme is as follows: the multiple quantum well light emitting diode includes: the semiconductor device comprises a growth substrate, a seed crystal layer, a buffer layer, an unintended doping layer, an N-type semiconductor layer, a multi-quantum well active layer, an electron blocking layer, a P-type semiconductor layer, a P electrode and an N electrode, wherein the seed crystal layer, the buffer layer, the unintended doping layer, the N-type semiconductor layer, the multi-quantum well active layer, the electron blocking layer and the P-type semiconductor layer are sequentially arranged on the; the multi-quantum well active layer is characterized in that the multi-quantum well active layer comprises a plurality of periods of well layers and barrier layers which are alternately superposed and sequentially grow from bottom to top, and MoS is arranged between the well layers and the barrier layers2An interposed layer of two-dimensional functional material.
Further, the insertion layer further includes a graphene layer.
Further, MoS2The layers and the graphene layers are alternately arranged periodically, and the total thickness is less than or equal to 5 nm.
Further, MoS2The layer has P-type impurity doping.
Further, MoS2The doping concentration of the P-type impurities in the material is gradually increased from one side of the N-type semiconductor layer to one side of the P-type semiconductor layer.
The invention also provides a preparation method of the multi-quantum well light-emitting diode with the insertion layer, which comprises the following steps:
(1) providing a growth substrate, and annealing the growth substrate;
(2) forming a seed crystal layer, a buffer layer, an unintended doping layer and an N-type semiconductor layer on the growth substrate in sequence by adopting an MOCVD (metal organic chemical vapor deposition) process;
(3) growing a multi-quantum well active layer on the N-type semiconductor layer, wherein the multi-quantum well active layer comprises a plurality of periods of well layers and barrier layers which are alternately overlapped from bottom to top, the well layers are formed by InGaN materials, the barrier layers are formed by GaN materials, and MoS is arranged between the well layers and the barrier layers2An insertion layer formed of a two-dimensional functional material;
(4) forming an electron blocking layer and a P-type semiconductor layer on the multiple quantum well active layer;
(5) sequentially etching the P-type semiconductor layer, the electron barrier layer and the multi-quantum well active layer to the N-type semiconductor layer;
(6) and forming a P electrode and an N electrode on the P type semiconductor layer and the N type semiconductor layer.
As described above, the present invention provides a multiple quantum well light emitting diode and a method for manufacturing the same, which has the following beneficial effects:
(1) MoS is arranged between the quantum well layer and the barrier layer2The insertion layer formed by the equal two-dimensional material can block the extension of epitaxial defects, improve the epitaxial growth quality of the quantum well structure and avoid the quenching of carriers;
(2) the two-dimensional material insertion layer can avoid electron overflow and improve quantum efficiency.
Drawings
Fig. 1 is a schematic structural diagram of a multiple quantum well light emitting diode according to embodiment 1 of the present invention.
Fig. 2 is a schematic view of the structure of a multiple quantum well active layer in embodiment 1 of the present invention.
Fig. 3 is a schematic view of the structure of a multiple quantum well active layer in embodiment 2 of the present invention.
Illustration of the drawings: the semiconductor device comprises a growth substrate 1, a seed crystal layer 2, a buffer layer 3, an unintentional doping 4, an N-type semiconductor layer 5, a multi-quantum well active layer 6, an electron blocking layer 7, a P-type semiconductor layer 8, a P electrode 9, an N electrode 10, a well layer 6a, a barrier layer 6b and MoS2An insertion layer 11 and a graphene insertion layer 12.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, embodiments of the present invention are described in further detail below with reference to the accompanying drawings.
Example 1
Fig. 1 is a schematic structural view of a multiple quantum well light emitting diode according to embodiment 1 of the present invention. As shown in fig. 1, the light emitting diode includes a growth substrate 1, and a seed layer 2, a buffer layer 3, an unintentional doping layer 4, an N-type semiconductor layer 5, a multiple quantum well active layer 6, an electron blocking layer 7, and a P-type semiconductor layer 8, which are sequentially disposed on the growth substrate. And sequentially etching the P-type semiconductor layer 8, the electron barrier layer 7, the multi-quantum well active layer 6 to the N-type semiconductor layer 5 to form a mesa structure, wherein the P electrode 9 and the N electrode 10 are respectively arranged on the P-type semiconductor layer 8 and the N-type semiconductor layer 5.
Fig. 2 is a schematic view of the structure of a multiple quantum well active layer in the present invention. As shown in fig. 2, the multiple quantum well active layer 6 includes a well layer 6a and a barrier layer 6b alternately stacked in 10-15 periods, which are sequentially grown from bottom to top, wherein the well layer 6a is formed of InGaN material, the barrier layer 6b is formed of GaN material, and MoS is disposed between the well layer and the barrier layer2An intervening layer of two-dimensional material. The two-dimensional material insertion layer is arranged between the well layer and the barrier layer, so that the formation and the expansion of defects between the well layer and the barrier layer are effectively inhibited, and the quenching of carriers is inhibited. All in oneThe thickness of the two-dimensional material insertion layer is not more than 5nm, and the transmission of current and light rays is not influenced. In addition, the two-dimensional material insertion layer can be provided with a P-type doping element, electrons under high current density are prevented from overflowing, the electrons and holes are compounded in the well layer, energy is released in the form of light waves, and the quantum efficiency of the multi-quantum-well active layer is improved.
The preparation method of the multiple quantum well light emitting diode with the insertion layer provided by the embodiment includes the following steps:
(1) annealing the growth substrate 1: heating the substrate for 5-10 minutes at the temperature of 1000-1200 ℃ in a hydrogen environment;
(2) forming a seed crystal layer 2, a buffer layer 3, an unintended doping layer 4 and an N-type semiconductor layer 5 on a growth substrate 1 in sequence by adopting an MOCVD (metal organic chemical vapor deposition) process; wherein the temperature range of the epitaxial growth is 900-1200 ℃, and the pressure range of the reaction chamber is 200-400 torr.
(3) Growing a multiple quantum well active layer 6 on the N-type semiconductor layer 5, which includes growing an InGaN material as a well layer 6a on the N-type semiconductor layer 5, and growing MoS on the well layer 6a2And (3) growing a GaN material as a barrier layer 6b on the two-dimensional material insertion layer 11, then growing the MoS2 two-dimensional material insertion layer 11, and repeating a plurality of cycles to form a multi-quantum well structure.
(4) An electron blocking layer 7 and a P-type semiconductor layer 8 are formed on the multiple quantum well active layer 6, the temperature range of epitaxial growth is 1000-1200 ℃, and the pressure range of the reaction chamber is 200-400 torr.
(6) Sequentially etching the P-type semiconductor layer 8, the electron barrier layer 7, the multi-quantum well active layer 6 to the N-type semiconductor layer 5 to form a mesa structure;
(7) a P electrode 109 and an N electrode 110 are formed on the P-type semiconductor layer 8 and the N-type semiconductor layer 5.
Wherein MoS2The two-dimensional material layer can be formed by transfer process, or MoO can be grown first2The material is then formed by vulcanization.
Example 2
Fig. 3 is a schematic structural diagram of a multiple quantum well light emitting diode according to embodiment 2 of the present invention. As shown in fig. 3, the light emitting diode in embodiment 2 is different from that in embodiment 1The method comprises the following steps: adding a graphene material 12 into the two-dimensional material layer, wherein MoS2The insertion layers 11 and the graphene insertion layers 12 are periodically stacked.
In summary, the multi-quantum well light emitting diode with the insertion layer and the preparation method thereof of the invention have the following beneficial effects: the two-dimensional material insertion layer is arranged between the quantum well layer and the barrier layer, so that extension of epitaxial defects can be blocked, epitaxial growth quality of the quantum well structure is improved, and quenching of current carriers is avoided; the quantum efficiency is improved, and the non-light radiation loss of carriers is reduced. The two-dimensional material insertion layer is doped with P-type elements, so that electron overflow can be avoided, the quantum efficiency is improved, the brightness of the light-emitting diode is improved, and the service life of the light-emitting diode is prolonged.
The foregoing embodiments are merely illustrative of the principles and utilities of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or change the above-mentioned embodiments without departing from the spirit and scope of the present invention. Accordingly, it is intended that all equivalent modifications or changes which can be made by those skilled in the art without departing from the spirit and technical spirit of the present invention shall be covered by the claims of the present invention.
Claims (5)
1. A multiple quantum well light emitting diode with an intervening layer, said multiple quantum well light emitting diode comprising: the semiconductor device comprises a growth substrate, a seed crystal layer, a buffer layer, an unintended doping layer, an N-type semiconductor layer, a multi-quantum well active layer, an electron blocking layer, a P-type semiconductor layer, a P electrode and an N electrode, wherein the seed crystal layer, the buffer layer, the unintended doping layer, the N-type semiconductor layer, the multi-quantum well active layer, the electron blocking layer and the P-type semiconductor layer are sequentially arranged on the; the multi-quantum well active layer is characterized in that the multi-quantum well active layer comprises a plurality of periods of well layers and barrier layers which are alternately superposed and sequentially grow from bottom to top, and a graphene layer and MoS are arranged between the well layers and the barrier layers2An interposed layer of two-dimensional functional material, MoS2The layers and the graphene layers are alternately and periodically arranged, the total thickness of the insertion layers is less than or equal to 5nm, and the MoS2The layer has P-type impurity doping.
2. The multi-quantum well light-emitting diode with an insertion layer as claimed in claim 1, wherein the P-type impurity doping concentration is gradually increased from the N-type semiconductor layer side to the P-type semiconductor layer side.
3. The multiple quantum well light emitting diode with interposed layers as claimed in any one of claims 1 to 2, wherein the well layers of the multiple quantum well active layer are InGaN-based materials and barrier layers are GaN-based materials.
4. The multi-quantum well light-emitting diode with an insertion layer as claimed in any one of claims 1 to 2, wherein the P-type semiconductor layer and the N-type semiconductor layer are doped GaN-based materials.
5. A preparation method of a multi-quantum well light-emitting diode with an insertion layer comprises the following steps: (1) providing a growth substrate, and annealing the growth substrate;
(2) forming a seed crystal layer, a buffer layer, an unintended doping layer and an N-type semiconductor layer on the growth substrate in sequence by adopting an MOCVD (metal organic chemical vapor deposition) process;
(3) growing a multi-quantum well active layer on the N-type semiconductor layer, wherein the multi-quantum well active layer comprises a plurality of periods of well layers and barrier layers which are alternately overlapped from bottom to top, the well layers are formed by InGaN materials, the barrier layers are formed by GaN materials, and graphene layers and MoS layers are arranged between the well layers and the barrier layers2An interposed layer of two-dimensional functional material, MoS2The layers and the graphene layers are alternately and periodically arranged, the total thickness of the insertion layers is less than or equal to 5nm, and the MoS2The layer has P-type impurity doping;
(4) forming an electron blocking layer and a P-type semiconductor layer on the multiple quantum well active layer;
(5) sequentially etching the P-type semiconductor layer, the electron barrier layer and the multi-quantum well active layer to the N-type semiconductor layer;
(6) and forming a P electrode and an N electrode on the P type semiconductor layer and the N type semiconductor layer.
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| CN113363360B (en) * | 2021-05-21 | 2022-09-09 | 厦门士兰明镓化合物半导体有限公司 | LED chip with vertical structure and manufacturing method thereof |
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