CN110085713A - A kind of multiple quantum well light emitting diode and preparation method thereof with insert layer - Google Patents
A kind of multiple quantum well light emitting diode and preparation method thereof with insert layer Download PDFInfo
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- CN110085713A CN110085713A CN201910478633.6A CN201910478633A CN110085713A CN 110085713 A CN110085713 A CN 110085713A CN 201910478633 A CN201910478633 A CN 201910478633A CN 110085713 A CN110085713 A CN 110085713A
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- layer
- multiple quantum
- quantum well
- emitting diode
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
Abstract
This application provides a kind of multiple quantum well light emitting diode and preparation method thereof with insert layer, two-dimensional functional material insert layer is added between the well layer and barrier layer of multiple quantum well active layer, its translucency is good, and outer layer growth defect can be obstructed, effectively avoid between well layer and barrier layer because caused by growth defect electron hole quench, reduce electro-optic conversion thermal losses, insert layer avoids electronics from overflowing simultaneously, improve Carrier Injection Efficiency, make light-emitting diode luminance height, service life is long, and electro-optical efficiency is high, energy conservation and environmental protection.
Description
Technical field
The invention belongs to the fields light emitting diode (LED), and in particular to a kind of multiple quantum well light emitting two with insert layer
Pole pipe and preparation method thereof.
Background technique
Multiple quantum well light emitting diode generallys use GaN base material as quantum well layer and barrier material layer in the prior art,
But due to usually adulterating other elements in well layer, distortion of lattice will cause, the lattice parameter difference of well layer and barrier layer causes
After defect, well layer and barrier layer multilayer cycle growth, defect is constantly accumulated.In addition, the doping in order to guarantee doped chemical, well layer
Different epitaxial conditions are generally required with barrier layer, such as control temperature, pressure, source gas ingredient, different technological parameters also can
Aggravate the formation of defect.These defects can capture carrier, cause the quenching of carrier, reduce the electro-optic conversion effect of Quantum Well
Rate.
Summary of the invention
To solve problem of the prior art, the present invention provides a kind of multiple quantum well light emitting diode with insert layer,
Scheme is as follows: the multiple quantum well light emitting diode includes: growth substrates, the seed crystal being successively set in the growth substrates
Layer, buffer layer, unintentional doped layer, n type semiconductor layer, multiple quantum well active layer, electronic barrier layer, p type semiconductor layer, respectively
P electrode and N electrode on p type semiconductor layer and n type semiconductor layer are set；It is characterized in that, multiple quantum well active layer includes
The well layer and barrier layer in the multiple periods successively grown from the bottom to top are alternately superimposed on, and MoS is arranged between well layer and barrier layer2Two-dimentional function
The insert layer that energy material is formed.
Further, insert layer further includes graphene layer.
Further, MoS2Layer is arranged with graphene layer alternate cycle, and overall thickness is less than or equal to 5nm.
Further, MoS2Layer has p type impurity doping.
Further, MoS2P type impurity doping concentration is from one side of n type semiconductor layer to p type semiconductor layer side in material
It gradually increases.
The present invention also provides a kind of preparation methods of multiple quantum well light emitting diode with insert layer, including walk as follows
It is rapid:
(1) growth substrates are provided, growth substrates are made annealing treatment；
(2) MOCVD technique is used, seed layer, buffer layer, unintentional doped layer, N are sequentially formed in the growth substrates
Type semiconductor layer；
(3) grow multiple quantum well active layer on the n type semiconductor layer, wherein the multiple quantum well active layer include by
Under the supreme multiple periods successively grown well layer and barrier layer be alternately superimposed on, the well layer is formed by InGaN material, the barrier layer
It is formed by GaN material, is arranged between the well layer and the barrier layer by MoS2The insert layer that two-dimensional functional material is formed；
(4) electronic barrier layer, p type semiconductor layer are formed in the multiple quantum well active layer；
(5) p type semiconductor layer, the electronic barrier layer, the multiple quantum well active layer to the N-type are sequentially etched
Semiconductor layer；
(6) P electrode and N electrode are formed on the p type semiconductor layer and the n type semiconductor layer.
As described above, the present invention provides a kind of multiple quantum well light emitting diode and preparation method thereof, its advantages include:
(1) MoS is set between quantum well layer and barrier layer2Etc. two-dimensional materials formed insert layer, can block extension lack
Sunken extension improves the epitaxial growth quality of quantum well structure, avoids the quenching of carrier；
(2) two-dimensional material insert layer can overflow to avoid electronics, improve quantum efficiency.
Detailed description of the invention
Fig. 1 is the multi-quantum trap LED structure schematic diagram of the 1st embodiment of the invention.
Fig. 2 is the structural schematic diagram of multiple quantum well active layer in the 1st embodiment in the present invention.
Fig. 3 is the structural schematic diagram of multiple quantum well active layer in the 2nd embodiment in the present invention.
It illustrates: growth substrates 1, seed layer 2, buffer layer 3, unintentional doping 4, n type semiconductor layer 5, multiple quantum wells
Active layer 6, electronic barrier layer 7, p type semiconductor layer 8, P electrode 9, N electrode 10, well layer 6a, barrier layer 6b, MoS2Insert layer 11, stone
Black alkene insert layer 12.
Specific embodiment
To keep the purpose of the present invention, technical scheme and beneficial effects clearer, the present invention is implemented with reference to the accompanying drawing
Mode is further described in detail.
Embodiment 1
Fig. 1 is the multi-quantum trap LED structure schematic diagram of the 1st embodiment of the invention.As shown in Figure 1, light-emitting diodes
Pipe includes growth substrates 1, and the seed layer 2, buffer layer 3, the unintentional doped layer 4, N-type half that are successively set in growth substrates
Conductor layer 5, multiple quantum well active layer 6, electronic barrier layer 7, p type semiconductor layer 8.It is sequentially etched p type semiconductor layer 8, electronics resistance
Barrier 7, multiple quantum well active layer 6 to n type semiconductor layer 5 form mesa structure, and P electrode 9 and N electrode 10 are separately positioned on p-type
On semiconductor layer 8 and n type semiconductor layer 5.
Fig. 2 is the structural schematic diagram of multiple quantum well active layer in the present invention.As shown in Fig. 2, multiple quantum well active layer 6 includes
The well layer 6a and barrier layer 6b in the 10-15 period successively grown from the bottom to top are alternately superimposed on, and wherein well layer 6a is by InGaN material shape
At barrier layer 6b is formed by GaN material, and MoS is arranged between well layer and barrier layer2The insert layer that two-dimensional material is formed.By in trap
Two-dimensional material insert layer is set between layer and barrier layer, restrained effectively the formation and extension of defect between well layer and barrier layer, is pressed down
The quenching of carrier is made.Two-dimensional material insert layer thickness is no more than 5nm simultaneously, does not influence the propagation of electric current and light.In addition,
It can have p-type doped chemical in two-dimensional material insert layer, prevent the electronics under high current density from overflowing, make electronics and hole
It is compound in well layer, and released energy with form of light waves, improve the quantum efficiency of multiple quantum well active layer.
The preparation method of multiple quantum well light emitting diode provided in this embodiment with insert layer, preparation method include
Following steps:
(1) growth substrates 1 are made annealing treatment: is 1000-1200 DEG C in temperature, in hydrogen environment, heats substrate 5-
10 minutes；
(2) MOCVD technique is used, seed layer 2, buffer layer 3, unintentional doped layer 4, N are sequentially formed in growth substrates 1
Type semiconductor layer 5；Wherein the temperature range of epitaxial growth is 900-1200 DEG C, chamber pressure range 200-400torr.
(3) multiple quantum well active layer 6 is grown on n type semiconductor layer 5 comprising grow on n type semiconductor layer 5
InGaN material grows MoS as well layer 6a, in well layer 6a2Two-dimensional material insert layer 11, growth GaN material as barrier layer 6b, then
MoS2 two-dimensional material insert layer 11 is grown, multiple periods are repeated, forms multi-quantum pit structure.
(4) electronic barrier layer 7, p type semiconductor layer 8, the temperature range of epitaxial growth are formed in multiple quantum well active layer 6
It is 1000-1200 DEG C, chamber pressure range 200-400torr.
(6) p type semiconductor layer 8, electronic barrier layer 7, multiple quantum well active layer 6 to n type semiconductor layer 5, shape are sequentially etched
At mesa structure；
(7) P electrode 109 and N electrode 110 are formed on p type semiconductor layer 8 and n type semiconductor layer 5.
Wherein MoS2Two-dimensional material layer can be formed by shifting process, can also first grow MoO2Pass through vulcanization after material
It is formed.
Embodiment 2
Fig. 3 is the multi-quantum trap LED structure schematic diagram of the 2nd embodiment of the invention.As shown in figure 3, embodiment 2
In light emitting diode the difference from embodiment 1 is that: grapheme material 12, wherein MoS is added in two-dimensional material layer2Insert layer
11 and 12 period of graphene insert layer it is stacked.
In conclusion a kind of multiple quantum well light emitting diode and preparation method thereof with insert layer of the invention, has
Below the utility model has the advantages that the expansion of epitaxy defect can be blocked by the way that two-dimensional material insert layer is arranged between quantum well layer and barrier layer
Exhibition, improves the epitaxial growth quality of quantum well structure, avoids the quenching of carrier；Quantum efficiency is improved, the non-of carrier is reduced
Light radiation loss.Two-dimensional material insert layer doped p-type element, can overflow to avoid electronics, improve quantum efficiency, improve and shine
The brightness and service life of diode.
The above-described embodiments merely illustrate the principles and effects of the present invention, and is not intended to limit the present invention.It is any ripe
The personage for knowing this technology all without departing from the spirit and scope of the present invention, carries out modifications and changes to above-described embodiment.Cause
This, those of ordinary skill in the art such as, institute without departing from the spirit and technical ideas disclosed in the present invention
All equivalent modifications or change completed, should be covered by the claims of the present invention.
Claims (10)
1. a kind of multiple quantum well light emitting diode with insert layer, the multiple quantum well light emitting diode include: growth substrates,
It is active to be successively set on seed layer in the growth substrates, buffer layer, unintentional doped layer, n type semiconductor layer, multiple quantum wells
Layer, electronic barrier layer, p type semiconductor layer, the P electrode and N electrode being separately positioned on p type semiconductor layer and n type semiconductor layer；
It is characterized in that, multiple quantum well active layer includes that the well layer in the multiple periods successively grown from the bottom to top and barrier layer are alternately superimposed on,
MoS is set between well layer and barrier layer2The insert layer that two-dimensional functional material is formed.
2. having the multiple quantum well light emitting diode of insert layer as described in claim 1, which is characterized in that the insert layer is also
Including graphene layer.
3. having the multiple quantum well light emitting diode of insert layer as claimed in claim 2, which is characterized in that MoS2Layer and graphite
The arrangement of alkene layer alternate cycle, overall thickness are less than or equal to 5nm.
4. the multiple quantum well light emitting diode with insert layer as described in claims 1 to 3 is any, which is characterized in that described
MoS2Layer has p type impurity doping.
5. having the multiple quantum well light emitting diode of insert layer as described in any of claims 4, which is characterized in that in institute
P type impurity doping concentration is stated to gradually increase from one side of n type semiconductor layer to p type semiconductor layer side.
6. the multiple quantum well light emitting diode as described in any one in claim 1-5 with insert layer, which is characterized in that described
The well layer of multiple quantum well active layer is InGaN sill, and barrier layer is GaN base material.
7. the multiple quantum well light emitting diode as described in any one in claim 1-5 with insert layer, which is characterized in that p-type
Semiconductor layer and n type semiconductor layer are the GaN base material of doping.
8. a kind of preparation method of the multiple quantum well light emitting diode with insert layer, the multiple quantum well light emitting diode preparation
Method includes the following steps: that (1) provides a growth substrates, makes annealing treatment to growth substrates；
(2) MOCVD technique is used, seed layer, buffer layer, unintentional doped layer, N-type half is sequentially formed in the growth substrates
Conductor layer；
(4) grow multiple quantum well active layer on the n type semiconductor layer, wherein the multiple quantum well active layer include by down toward
On the well layer in multiple periods that successively grows and barrier layer be alternately superimposed on, the well layer is formed by InGaN material, the barrier layer by
GaN material is formed, and is arranged between the well layer and the barrier layer by MoS2The insert layer that two-dimensional functional material is formed；
(5) electronic barrier layer, p type semiconductor layer are formed in the multiple quantum well active layer；
(6) p type semiconductor layer, the electronic barrier layer, the multiple quantum well active layer to the N-type is sequentially etched partly to lead
Body layer；
(7) P electrode and N electrode are formed on the p type semiconductor layer and the n type semiconductor layer.
9. the preparation method of the multiple quantum well light emitting diode with insert layer as claimed in claim 8, which is characterized in that institute
Stating insert layer further includes graphene layer.
10. the preparation method of the multiple quantum well light emitting diode with insert layer as claimed in claim 9, which is characterized in that
MoS2Layer is arranged with graphene layer alternate cycle, and overall thickness is less than or equal to 5nm.
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| CN111613698A (en) * | 2020-05-22 | 2020-09-01 | 青岛粲耀新材料科技有限责任公司 | Graphene intercalation III-group nitride semiconductor composite film and preparation method thereof |
| CN113363360A (en) * | 2021-05-21 | 2021-09-07 | 厦门士兰明镓化合物半导体有限公司 | LED chip with vertical structure and manufacturing method thereof |
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Effective date of registration: 20210106 Address after: 044500 circular economy industrial park, Chengdong street, Yongji City, Yuncheng City, Shanxi Province Applicant after: Shanxi crossing Photoelectric Technology Co., Ltd Address before: 300270 105-3-602, century garden, Gulin street, Binhai New Area, Tianjin Applicant before: Liu Weidong Applicant before: Xiao Kaixiang Applicant before: Pu Dan Dan Applicant before: Zhao Wei |
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