CN103137807A - Green ray light-emitting diode (LED) epitaxial structure with stress relief layer and production method thereof - Google Patents
Green ray light-emitting diode (LED) epitaxial structure with stress relief layer and production method thereof Download PDFInfo
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Abstract
The invention relates to a green ray light-emitting diode (LED) epitaxial structure with a stress relief layer and a production method of the green ray LED epitaxial structure with the stress relief layer. The LED epitaxial structure comprises a substrate, a nucleating layer produced on the substrate, a buffer layer produced on the nucleating layer, an n-type contact layer produced on the buffer layer, a multiple quantum well active area produced on one side of the upper face of the n-type contact layer, a stress relief layer produced on the multiple quantum well active area, an electron barrier layer produced on the stress relief layer, a p-type layer produced on the electron barrier layer, a positive electrode produced on the p-type layer and a negative electrode produced on a table face on one side of the contact layer, wherein a table face is formed on the other side. The problem that with the method that in white light solid state lighting, red, green and blue (RGB) fluorescent powder is lased by green rays to generate white light, output power of the green ray LED is low can be solved.
Description
Technical field
The present invention relates to a kind of green light LED epitaxial structure with stress release layer, refer to especially a kind of green light LED epitaxial structure and manufacture method with stress release layer.
Background technology
White LEDs take the III group-III nitride as material is just with unprecedented speed high speed development.The advantages such as white LEDs has more high brightness, low energy consumption, the life-span is long, response is fast, radiationless.The restraining factors of China's sustainable economic development have been become for current energy shortage, adopt the semiconductor lighting of white LEDs can reduce by 50% electric consumption on lighting amount, simultaneously can also environmental contamination reduction, thereby reduce to a certain extent waste gas to the impact of Global climate change, improve our living environment.Higher luminous efficiency makes white LEDs become a kind of very promising general illumination scheme.Yet, if want real energy savings and reduce lighting expense use, also need further to improve the performance of semiconductor lighting.
At present, adopt LEDs to realize that the mode of white-light illuminating mainly contains three kinds, wherein blue-ray LED+YAG fluorescent material is the mainstream technology of present industry.But adopt the light distribution of the white light that this mode obtains to have directivity, and colour temperature have greatly larger variation with the change of operating current and junction temperature.Next is to adopt green light LED s to excite the mode of RGB fluorescent material to realize white-light illuminating, but because the efficient of present green light LED s is extremely low, adopts this mode to realize that white-light illuminating still has very large resistance.To adopt the RGB three-color LED to realize the white light of different-colour and color rendering index by different proportionings at last, several LED by careful selection different wave length come blend color, light efficiency and color rendering index may reach respectively 400lm/W and 90 in theory, such efficient and color rendering index can be from satisfying in fact nearly all white applications.Being used for the LEDs wavelength of mixed white light is respectively 463nm (blue B), 530nm (green G) and 614nm (red R).Mix the output white light and have wider spectral region, color rendering is high, and colour temperature is adjustable.The method has eliminated without fluorescent material the energy loss that causes because of the wavelength conversion, has very high luminous efficiency.The BGYR-LEDs scheme is not only meaningful for general lighting, has more in the backlight field to have broad application prospects.
But, adopt the RGB mode to realize what high power white light threw light on, also need to solve the problem of green light LED inefficiency.For green light LED, its internal quantum is lower and sharply descend with the increase of electric current.Causing the lower one of the main reasons of quantum efficiency is exactly piezoelectric polarization electric field larger in active area.For the nitride LED material system, lattice mismatch between AlGaN, InGaN, GaN is larger, not only can introduce higher defect concentration in material, also can make the lattice generation distortion at heterojunction boundary place, cause the positive and negative charge center to be separated, produce the piezoelectric polarization electric field.For green light LED, the piezoelectric polarization electric field in active area is up to 3MV/cm, and this polarization field makes electronics with the hole wave function, spatially occur serious the separation, thereby causes the combined efficiency of radioluminescence significantly to descend.the existence of polarization field also can produce the phenomenon of electronics overshoot, for the block electrons overshoot, people introduce the AlGaN electronic barrier layer between active area and P type contact layer, lattice does not mate between due to AlGaN and GaN, like this can be at the piezoelectric polarization of introducing at the interface electric field both, this polarization field is crooked in the formation valence band at the interface of AlGaN, improved the effective depth of valence band, hinder the injection in hole, and the lattice of building layer due to last GaN is subject to tensile stress, lattice mismatch between trap is built increases, thereby further cause the interior piezoelectric polarization electric field of quantum well to increase and reduce radiation and meet efficient.
based on above reason, can insert one deck AlInGaN stress release layer between Multiple Quantum Well and AlGaN electronic barrier layer, by changing the Al of this layer, In, proportioning between Ga, make the lattice constant of this layer consistent or close with the lattice constant of AlGaN layer, so just can reduce the distortion of lattice in the AlGaN layer, weaken the piezoelectric polarization electric field that place, AlGaN bed boundary is produced by distortion of lattice, reduce the band curvature in the AlGaN layer, improve this layer the hole injection efficiency and to the barrier effectiveness of electronics, thereby the radiation that improves green light LED meets efficient efficient and luminous efficiency.
Summary of the invention
The object of the invention is to, a kind of green light LED epitaxial structure and manufacture method with stress release layer is provided, it can solve in the white light solid-state illumination and produce the low problem of green light LED power output in this method of white light with green glow lase RGB fluorescent material.
For achieving the above object, the invention provides a kind of green light LED epitaxial structure with stress release layer, comprising:
One substrate;
One nucleating layer, it is produced on substrate;
One resilient coating, it is produced on nucleating layer;
One N-shaped contact layer, it is produced on resilient coating;
One Multiple Quantum Well active area, it is produced on the side above the N-shaped contact layer, and opposite side forms a table top;
One stress release layer, it is produced on the Multiple Quantum Well active area;
One electronic barrier layer, it is produced on stress release layer;
One p-type layer, it is produced on electronic barrier layer;
One positive electrode, it is produced on the p-type layer;
One negative electrode, it is produced on the table top of contact layer one side.
The present invention also provides a kind of manufacture method with green light LED epitaxial structure of stress release layer, comprises the steps:
Step 1: get a substrate;
Step 2: be made into successively stratum nucleare, resilient coating, N-shaped contact layer, Multiple Quantum Well active area, stress release layer, electronic barrier layer and p-type layer on substrate;
Step 3: adopt dry etching, etching under the side direction on the surface of p-type layer, etching depth arrives the N-shaped contact layer, forms a table top on the surface of the N-shaped contact layer that exposes;
Step 4: make positive electrode on the p-type layer;
Step 5: make negative electrode on the table top on the N-shaped contact layer, complete the making of LED epitaxial structure.
Beneficial effect of the present invention is: the present invention solves by insert the AlInGaN material between Multiple Quantum Well and AlGaN electronic barrier layer the low problem of green light LED power output that exists at present.Because the lattice constant of AlInGaN or AlInN can be consistent with AlGaN, so just can reduce the lattice strain in AlGaN, can avoid on the one hand crackle or the dislocation brought due to lattice mismatch, reduce the piezoelectric polarization effect; Can all avoid on the other hand AlGaN valence band band curvature to improve effective valence band height, avoid the injection of blocking hole.Can effectively reduce the piezoelectric polarization electric field in electronic barrier layer when adopting AlInGaN or AlInN to make stress release layer, effectively improve the injection efficiency in hole, thereby improve the electron-hole recombinations efficient of active area.Above method can improve the final power output of green light LED.
Description of drawings
For further illustrating technology contents of the present invention, the present invention will be described in more detail below in conjunction with drawings and Examples, wherein:
Fig. 1 is structural representation of the present invention.
Fig. 2 is manufacture method schematic flow sheet of the present invention.
Embodiment
See also shown in Figure 1ly, the invention provides a kind of green light LED epitaxial structure with stress release layer, comprising:
One substrate 1, the material of substrate 1 can adopt sapphire, SiC, Si, GaN etc.;
One nucleating layer 2, it is produced on substrate 1;
One resilient coating 3, it is produced on nucleating layer 2;
One N-shaped contact layer 4, it is produced on resilient coating 3;
One Multiple Quantum Well active area 5, it is produced on the side above N-shaped contact layer 4, and opposite side forms a table top 41, and the periodicity of described Multiple Quantum Well active area 5 is 5-13, and the material in described 5 each cycle of Multiple Quantum Well active area is In
zGa
1-zN/GaN, the component of In is 0.17＜z＜0.35, In
zGa
1-zThe thickness of N is 1.0-6.0nm, and the thickness of GaN is 5.0-20nm;
One stress release layer 6, it is produced on Multiple Quantum Well active area 5, and the material of this stress release layer 6 is Al
xIn
yGa
(1-x-y)N, 0＜x＜1,0＜y＜1, thickness is 3-10nm, and the doping type of described stress release layer 6 is two luxuriant magnesium p-type doping, and doping content is 10
17-10
19cm
-3
One electronic barrier layer 7, it is produced on stress release layer 6;
One p-type layer 8, it is produced on electronic barrier layer 7;
One positive electrode 9, it is produced on p-type layer 8;
One negative electrode 10, it is produced on the table top 41 of contact layer 4 one sides.
See also Fig. 2, and shown in Figure 1 in conjunction with consulting, the invention provides a kind of manufacture method with green light LED epitaxial structure of stress release layer, comprise the steps:
Step 1: get a substrate 1;
Step 2: be made into successively stratum nucleare 2, resilient coating 3, N-shaped contact layer 4, Multiple Quantum Well active area 5, stress release layer 6, electronic barrier layer 7 and p-type layer 8 on substrate 1;
Wherein the periodicity of Multiple Quantum Well active area 5 is 513, and the material in described 5 each cycle of Multiple Quantum Well active area is In
zGa
1-zN/GaN, the component of In is 0.17＜z＜0.35, this In
zGa
1-zThe growth temperature of N is 630-750 ℃, In
zGa
1-zThe thickness of N is 1.0-6.0nm, and the growth temperature of GaN is 700-820 ℃, and the thickness of GaN is 5.0-20nm;
The material in wherein said 5 each cycle of Multiple Quantum Well active area is In
zGa
1-zN/GaN, the component of In is 0.17＜z＜0.35, In
zGa
1-zThe thickness of N is 1.0-6.0nm, and the thickness of GaN is 5.0-20nm, and the doping type of described stress release layer 6 is two luxuriant magnesium p-type doping, and doping content is 10
17-10
19cm
-3
Step 3: adopt dry etching, etching under the side direction on the surface of p-type layer 8, etching depth arrives N-shaped contact layer 4, forms a table top 41 on the surface of the N-shaped contact layer 4 that exposes;
Step 4: make positive electrode 9 on p-type layer 8;
Step 5: make negative electrode 10 on the table top 41 on N-shaped contact layer 4, complete the making of LED epitaxial structure.
Describe the preferred embodiments of the present invention in detail below in conjunction with accompanying drawing.
A kind of structure that stress release layer gets green light LED that has provided by the invention, schematic diagram is seen Fig. 1.Growth has nucleating layer 2 successively on Sapphire Substrate 1; Resilient coating 3; N-shaped contact layer 4; Multiple Quantum Well active area 5, wherein the In component in the InGaN trap is 15%-30%, its preferred value is 23%; Stress release layer 6; Electronic barrier layer 7 is the AlGaN layer, and wherein the Al component is 7%-30%, and its preferred value is 18%; And p-type layer 8, described stress release layer comprises: the stress release layer that is used for release p-type AlGaN stress is Al
xIn
yGa
(1-x-y)The N layer, 0.3＜x＜0.6,0.01＜y＜0.1 wherein, wherein the preferred value of x and y is respectively 0.45 and 0.06.
In wherein said stress release layer 6, Al
xIn
yGa
(1-x-y)The thickness of N layer is that its preferred value of 3-10nm is 5nm.
In wherein said stress release layer 6, Al
xIn
yGa
(1-x-y)The component x of the Al of N layer is 0.3＜x＜0.6, and its preferred value is 0.45.
In wherein said stress release layer 6, Al
xIn
yGa
(1-x-y)The component y of the In of N layer is 0.01＜y＜0.1, and its preferred value is 0.06.
In wherein said stress release layer 6, Al
xIn
yGa
(1-x-y)Doping type in the N layer is the p-type doping.
In wherein said p-type stress release layer 6, Al
xIn
yGa
(1-x-y) the N layer is take two luxuriant magnesium as the p-type dopant, and the doping content of two luxuriant magnesium is 10
17-10
19cm
-3, its preferred value is 10
18cm
-3
Wherein said Multiple Quantum Well active area 5 is In
zGa
1-zN/GaN, wherein the trap layer thickness is 1.0-6.0nm, and barrier layer thickness is 5.0-20nm, and the component of In is 0.17＜z＜0.35, and the growth temperature of trap layer is 630-750 ℃, the growth temperature of building layer is 700-820.℃。
Wherein said p-type electronic barrier layer 7 is the AlxGa1-xN layer, 0.05＜x＜0.3 wherein, and thickness is 10-30nm, and growth temperature is 710-1100 ℃, and take two luxuriant magnesium as the p-type dopant, and the doping content of two luxuriant magnesium is 10
19-10
22cm
-3
Manufacture method with green light LED of stress release layer:
See schematic diagram 2 and in conjunction with schematic diagram 1, get a Sapphire Substrate 1, this Sapphire Substrate is placed in the reaction chamber of MOCVD, the temperature of reaction chamber is brought up to the high temperature of 1100 ℃, with hydrogen, substrate surface being carried out cleaning processes, then reduce the temperature to 500 ℃, sapphire surface is carried out the 5min nitrogen treatment; Then temperature drops to 500-600 ℃, growing GaN nucleating layer 2, and thickness is about 30nm; Then temperature rises to 1160 ℃, H
2As the non-Doped GaN resilient coating 3 of carrier gas epitaxial growth 0.5 micron thickness and the Si Doped n-type layer 4 of 4.5 micron thickness, this N-shaped layer is the GaN layer, and wherein the doping content of Si is 5 * 10
17cm
-3To 5 * 10
19cm
-3Between; Then reduce the temperature between 650 ℃-750 ℃, carrier gas is changed to N
2, growth Multiple Quantum Well active area 5 on this resilient coating, this Multiple Quantum Well active area contains 2-5 to In
xGa
1-xThe N/GaN quantum well, 18%≤x≤30% wherein, each In
xGa
1-xThe thickness of N trap layer is 3nm, and the thickness that each GaN builds layer is 15nm, and wherein the molar flow of TEGa is 0.1 * 10-5 moles/min to 1.5 * 10
-5Moles/min, the molar flow of TEIn are 1 * 10
-5Moles/min to 10 * 10-5 moles/min, NH
3Flow be 12 liter/mins of clocks; Then the temperature to 810 that raises ℃, Al grows on the InGaN/GaN quantum well
xIn
yGa
(1-x-y)N stress release layer 6, wherein (0.3≤x≤0.6,0.01≤y≤0.1), the molar flow of TEAl is 0.1 * 10
-5Moles/min to 1.5 * 10
-5Moles/min, the molar flow of TEGa are 0.1 * 10
-5Moles/min to 1.5 * 10
-5Moles/min, the molar flow of TEIn are 1 * 10
-5Moles/min to 10 * 10
-5Moles/min, NH
3Flow be 12 liter/mins of clocks, with N
2As carrier gas; Temperature is increased to 1000-1100 ℃, switches to H
2As carrier gas, the thick electronic barrier layer 7 of growth 20nm, this electronic barrier layer is the AlGaN layer; Growth 150nm thick p-type layer 8, this layer is the GaN layer, with two luxuriant magnesium p-type dopant the most, the Mg doping content is 5 * 10
19cm
-3To 5 * 10
20cm
-3Between; Adopt dry etching, etching under the side direction on the surface of p-type layer 8, etching depth arrives N-shaped contact layer 4, forms a table top 41 on the surface of the N-shaped contact layer 4 that exposes; Make positive electrode 9 on p-type layer 8; At last, make negative electrode 10 on the table top 41 on N-shaped contact layer 4, complete the making of LED epitaxial structure.
The above; only embodiments of the invention; be not that the present invention is done any pro forma restriction; every any simple modification, equivalent variations and modification of above embodiment being done according to the technology of the present invention essence; within all still belonging to the technical solution of the present invention scope, so protection scope of the present invention is when being as the criterion with claims.
Claims (10)
1. green light LED epitaxial structure with stress release layer comprises:
One substrate;
One nucleating layer, it is produced on substrate;
One resilient coating, it is produced on nucleating layer;
One N-shaped contact layer, it is produced on resilient coating;
One Multiple Quantum Well active area, it is produced on the side above the N-shaped contact layer, and opposite side forms a table top;
One stress release layer, it is produced on the Multiple Quantum Well active area;
One electronic barrier layer, it is produced on stress release layer;
One p-type layer, it is produced on electronic barrier layer;
One positive electrode, it is produced on the p-type layer;
One negative electrode, it is produced on the table top of contact layer one side.
2. the green light LED epitaxial structure with stress release layer according to claim 1, wherein the material of stress release layer is Al
xIn
yGa
(1-x-y)N, 0＜x＜1,0＜y＜1, thickness is 3-10nm.
3. the green light LED epitaxial structure with stress release layer according to claim 2, the doping type of wherein said stress release layer are two luxuriant magnesium p-types doping, and doping content is 10
17-10
19cm
-3
4. the green light LED epitaxial structure with stress release layer according to claim 1, wherein the periodicity of Multiple Quantum Well active area is 5-13.
5. the green light LED epitaxial structure with stress release layer according to claim 4, the material in wherein said each cycle of Multiple Quantum Well active area is In
zGa
1-zN/GaN, the component of In is 0.17＜z＜0.35, In
zGa
1-zThe thickness of N is 1.0-6.0nm, and the thickness of GaN is 5.0-20nm.
6. the manufacture method with green light LED epitaxial structure of stress release layer, comprise the steps:
Step 1: get a substrate;
Step 2: be made into successively stratum nucleare, resilient coating, N-shaped contact layer, Multiple Quantum Well active area, stress release layer, electronic barrier layer and p-type layer on substrate;
Step 3: adopt dry etching, etching under the side direction on the surface of p-type layer, etching depth arrives the N-shaped contact layer, forms a table top on the surface of the N-shaped contact layer that exposes;
Step 4: make positive electrode on the p-type layer;
Step 5: make negative electrode on the table top on the N-shaped contact layer, complete the making of LED epitaxial structure.
7. the manufacture method with green light LED epitaxial structure of stress release layer according to claim 6, wherein the material of stress release layer is Al
xIn
yGa
(1-x-y)N, 0＜x＜1,0＜y＜1, thickness is 3-10nm.
8. the manufacture method with green light LED epitaxial structure of stress release layer according to claim 7, the doping type of wherein said stress release layer 6 are two luxuriant magnesium p-types doping, and doping content is 10
17-10
19cm
-3
9. the manufacture method with green light LED epitaxial structure of stress release layer according to claim 6, wherein the periodicity of Multiple Quantum Well active area 5 is 5-13.
10. the manufacture method with green light LED epitaxial structure of stress release layer according to claim 9, the material in wherein said 5 each cycle of Multiple Quantum Well active area is In
zGa
1-zN/GaN, the component of In is 0.17＜z＜0.35, this In
zGa
1-zThe growth temperature of N is 630-750 ℃, In
zGa
1-zThe thickness of N is 1.0-6.0nm, and the growth temperature of GaN is 700-820 ℃, and the thickness of GaN is 5.0-20nm.
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Cited By (7)
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| CN103413877A (en) * | 2013-08-16 | 2013-11-27 | 湘能华磊光电股份有限公司 | Method for growing quantum well stress release layer of epitaxial structure and epitaxial structure |
| CN107968139A (en) * | 2014-01-13 | 2018-04-27 | 新世纪光电股份有限公司 | Light emitting diode construction |
| CN109863609A (en) * | 2016-08-25 | 2019-06-07 | 亿光电子工业股份有限公司 | Nitride semiconductor device and its manufacturing method and applied encapsulating structure |
| US10319879B2 (en) | 2016-03-08 | 2019-06-11 | Genesis Photonics Inc. | Semiconductor structure |
| US10468549B2 (en) | 2016-09-19 | 2019-11-05 | Genesis Photonics Inc. | Semiconductor device containing nitrogen |
| CN113451455A (en) * | 2020-11-26 | 2021-09-28 | 重庆康佳光电技术研究院有限公司 | Preparation method of LED epitaxy, LED epitaxy structure and LED chip |
| CN113725327A (en) * | 2021-08-10 | 2021-11-30 | 广州市众拓光电科技有限公司 | GaN-based green light LED epitaxial structure and preparation method and application thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103413877A (en) * | 2013-08-16 | 2013-11-27 | 湘能华磊光电股份有限公司 | Method for growing quantum well stress release layer of epitaxial structure and epitaxial structure |
| CN103413877B (en) * | 2013-08-16 | 2016-01-20 | 湘能华磊光电股份有限公司 | The growing method of epitaxial structure quantum well stress release layer and epitaxial structure thereof |
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| US10319879B2 (en) | 2016-03-08 | 2019-06-11 | Genesis Photonics Inc. | Semiconductor structure |
| CN109863609A (en) * | 2016-08-25 | 2019-06-07 | 亿光电子工业股份有限公司 | Nitride semiconductor device and its manufacturing method and applied encapsulating structure |
| US10468549B2 (en) | 2016-09-19 | 2019-11-05 | Genesis Photonics Inc. | Semiconductor device containing nitrogen |
| CN113451455A (en) * | 2020-11-26 | 2021-09-28 | 重庆康佳光电技术研究院有限公司 | Preparation method of LED epitaxy, LED epitaxy structure and LED chip |
| CN113725327A (en) * | 2021-08-10 | 2021-11-30 | 广州市众拓光电科技有限公司 | GaN-based green light LED epitaxial structure and preparation method and application thereof |
| CN113725327B (en) * | 2021-08-10 | 2024-04-26 | 广州市众拓光电科技有限公司 | GaN-based green light LED epitaxial structure and preparation method and application thereof |
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Application publication date: 20130605 |