CN201766093U - Gallium nitride light-emitting diode - Google Patents
Gallium nitride light-emitting diode Download PDFInfo
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- CN201766093U CN201766093U CN2010201982334U CN201020198233U CN201766093U CN 201766093 U CN201766093 U CN 201766093U CN 2010201982334 U CN2010201982334 U CN 2010201982334U CN 201020198233 U CN201020198233 U CN 201020198233U CN 201766093 U CN201766093 U CN 201766093U
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Abstract
The utility model relates to a gallium nitride light-emitting diode which structurally comprises a substrate material, a cushion layer, an n-type contact layer, an active luminescent layer, a p-type insertion layer, a p-type electronic baffle layer, a p-type contact layer and an anode and cathode layer. Compared with the existing gallium nitride light-emitting diode, the gallium nitride light-emitting diode in the utility model is mainly characterized in that a low-temperature p-type gallium nitride layer grows between an InGaN/GaN multiple quantum well active luminescent layer and a p-type AlGaN electronic baffle layer, so that the InGaN/GaN multiple quantum well active luminescent layer and the p-type AlGaN electronic baffle layer are separated from the interface in a physical mode. Shown by the results, as the low-temperature p-type gallium nitride layer is arranged, the luminous intensity and reverse breakdown voltage of the gallium nitride light-emitting diode can be greatly improved.
Description
Technical field
The present invention relates to a kind of gallium nitride (GaN) series LED, particularly relate to a kind of GaN series LED with low temperature p type GaN layer.
Background technology
III-V family photoelectric semiconductor material is described as third generation semi-conducting material at present.And the GaN series LED, owing to can produce the light-emitting diode (abbreviating " LED " as) of various coloured light (blue light or the purple light that especially need high energy gap) by the composition of control material, and become the emphasis of industry research.
Mainly adopt the MOCVD technology at present based on the semi-conducting material of GaN or the epitaxial growth of device.In the technology of utilizing MOCVD technology growth nitride-based semiconductor (GaN, AlN, InN and their alloy nitride) and since not with the backing material of GaN lattice match, so the employing sapphire carries out heteroepitaxy as substrate usually.Yet, between sapphire and nitride-based semiconductor, have the bigger lattice mismatch (～13.8%) and the difference of thermal coefficient of expansion, so growth does not have the high-quality nitride-based semiconductor of be full of cracks, surfacing very difficult.The most effective epitaxial growth method adopts two step epitaxial growth methods (referring to H.Amano usually at present, N.Sawaki and Y.Toyoda etc., " use the metal organic vapor growth of the high-quality GaN film of AlN resilient coating ", Appl.Phys.Lett.48 (5), 353 (1986); S.Nakanura etc., " high-quality p type GaN:Mg growth for Thin Film ", Jpn.J.Appl.Phys.30, L1708 (1991) with GaN resilient coating; And Chinese patent No.CN1508284A), this method mainly comprises the steps: earlier the very thin nucleating layer of (as 500 ℃) growth one deck at low temperatures; Heat up then and anneal the unadulterated GaN resilient coating of direct growth on this nucleating layer; Follow on this resilient coating growing n-type GaN ohmic contact layer; Growing InGaN/GaN Multiple Quantum Well (MQWs) active layer under 700 ℃ to 850 ℃ temperature then; Follow under the high temperature more than 1000 ℃ the growing p-type AlGaN electronic barrier layer; Last growing p-type GaN ohmic contact layer is made p type ohmic contact transparency electrode and n type Ohm contact electrode.
Yet above-mentioned LED growing technology (i.e. direct growth p type AlGaN electronic barrier layer between InGaN/GaN multiple quantum well active layer and p type GaN contact layer) exists forward operating voltage height and luminous intensity not to have the defective that significantly strengthens.Cause the main cause of the problems referred to above to comprise following three aspects.At first, the differing greatly of the lattice constant of the lattice constant of AlGaN and InGaN/GaN Multiple Quantum Well, and the lattice mismatch between them can produce very big compression in InGaN/GaN Multiple Quantum Well active area.The compression that lattice mismatch causes can form bigger compressive strain electric field (being piezoelectric field effect (piezo-electrical field effect)) because of having the III group-III nitride of suppressing electrical characteristics on the one hand in the Multiple Quantum Well active area, and the existence of piezoelectric field effect will make electronics spatially separate with the wave function in hole, thereby cause weakening of radiation recombination intensity.In addition, the mechanical stress that above-mentioned compressive strain causes is the further quality of deterioration epitaxial loayer also, thereby the luminous intensity of device is exerted an influence.Secondly, p type AlGaN electronic barrier layer must just can obtain crystal mass preferably in growth more than 1000 ℃, and the growth temperature of InGaN/GaN multiple quantum well active layer is 700 ℃ to 850 ℃, therefore when temperature is elevated to more than 1000 ℃ behind the InGaN/GaN multiple quantum well active layer growth ending, the structure of the InGaN/GaN multiple quantum well active layer of low-temperature epitaxy can be damaged, thereby influences the luminous efficiency of light-emitting diode.Once more, because the growth temperature of p type AlGaN electronic barrier layer is higher, and p type dopant (such as Mg) diffusion coefficient increase at high temperature is very fast, therefore in the process of p type AlGaN electronic barrier layer high growth temperature, p type dopant will spread to the InGaN/GaN Multiple Quantum Well active area that is arranged under it inevitably, and this will produce serious influence to light-emitting diode.Therefore, still there is improved space, to obtain to have the GaN series LED of high luminous intensity.
Summary of the invention
The object of the present invention is to provide a kind of p of inhibition type dopant (such as Mg) in the InGaN/GaN multiple quantum well layer, to spread and reduce the GaN series LED of the high brightness of the piezoelectric effect in the multiple quantum well light emitting district.This GaN series LED comprises:
Substrate, its monocrystalline oxide that can be approached nitride-based semiconductor by alumina single crystal, 6H-SiC, 4H-SiC or the lattice constant of C-face, R-face or A-face is made;
Resilient coating, it is positioned on this substrate, can be made of gallium nitride based material;
N type contact layer, it is positioned on this resilient coating, is made of n type gallium nitride;
Active luminescent layer, it is positioned on this n type contact layer and covers the part surface of this n type contact layer, and this activity luminescent layer is made of the multi-quantum pit structure that InGaN (InGaN) thin layer and gallium nitride (GaN) thin layer interaction cascading form;
Negative electrode, it is positioned at this n type contact layer not by on the upper surface of this activity luminescent layer covering;
P type electronic barrier layer, it is positioned on this activity luminescent layer, is made of aluminium gallium nitride alloy (AlGaN);
P type contact layer, it is positioned on this p type electronic barrier layer, is made of p type gallium nitride; And
Positive electrode, it is positioned on this p type contact layer and covers the part surface of this p type contact layer; It is characterized in that,
Described GaN series LED comprises that also thickness is the low temperature p type gallium nitride layer of 20nm～100nm, this low temperature p type gallium nitride layer is between described active luminescent layer and described p type electronic barrier layer, and its lower surface contacts with gallium nitride thin layer in the described active luminescent layer.
Low temperature p type gallium nitride layer among the present invention is meant that its growth temperature is lower than the p type gallium nitride layer of the growth temperature of the gallium nitride thin layer in the active luminescent layer.
The thickness of the low temperature p type gallium nitride layer among the present invention is preferably the 20-100 nanometer.When the thickness of low temperature p type gallium nitride layer during less than 20 nanometers, it stops the DeGrain of the p type diffuse dopants in the p type electronic barrier layer, thereby influences the luminous efficiency of light-emitting diode.When the thickness of low temperature p type gallium nitride layer surpasses 100 nanometers, can influence the barrier effect of p type electronic barrier layer, thereby influence the luminous efficiency of light-emitting diode electronics.
The growth temperature of the low temperature p type gallium nitride layer among the present invention is preferably 600-900 ℃.When the growth temperature of low temperature p type gallium nitride layer was lower than 600 ℃, the crystal mass of low temperature p type gallium nitride layer was relatively poor, thereby influenced the luminous efficiency of light-emitting diode.When the growth temperature of low temperature p type gallium nitride layer surpasses 900 ℃, can destroy the structure of active luminescent layer on the one hand, the diffusion coefficient of the p type dopant in the low temperature p type gallium nitride layer is increased, thereby influence the luminous efficiency of light-emitting diode.
The present invention has certain thickness low temperature p type gallium nitride layer by growth between active luminescent layer of InGaN/GaN Multiple Quantum Well and p type electronic barrier layer, has obtained the GaN series LED that luminous intensity and reverse breakdown voltage obtain bigger raising.Main cause is following two aspects.
At first, growth one deck has certain thickness low temperature p type gallium nitride layer between active luminescent layer of InGaN/GaN Multiple Quantum Well and p type AlGaN electronic barrier layer, can the active luminescent layer of InGaN/GaN Multiple Quantum Well be separated with physics mode with p type AlGaN electronic barrier layer from the interface, thereby reduce strain electric field in the InGaN/GaN Multiple Quantum Well activity luminescent layer.In addition, compressive strain reduces also will reduce infringement to the active luminescent layer of InGaN/GaN Multiple Quantum Well.
More crucial is, because the growth temperature of p type AlGaN electronic barrier layer is higher, and p type dopant (such as Mg) diffusion effect at high temperature will strengthen greatly.Traditional LED structure is very thin owing to building layer (being the GaN base layer in the InGaN/GaN multi-quantum pit structure), thereby can't avoid p type dopant to spread in the InGaN/GaN multiple quantum well layer.Yet, the present invention has certain thickness low temperature p type GaN layer by inserting between InGaN/GaN multiple quantum well layer and p type AlGaN electronic barrier layer, can suppress the diffusion of p type dopant in the InGaN/GaN multiple quantum well layer, thereby reduce of the influence of p type diffuse dopants the active luminescent layer of InGaN/GaN Multiple Quantum Well.Even this is that it also will mainly enter in this low temperature p type GaN layer because the diffusion of p type dopant (such as Mg) is very strong.
Description of drawings
The present invention will be described in more detail below in conjunction with the drawings and specific embodiments.
Fig. 1 is the existing GaN series LED that does not have low temperature p type GaN insert layer.
Fig. 2 is the GaN series LED that has low temperature p type GaN insert layer according to of the present invention.
Fig. 3 is existing and according to the forward injection current and the luminous intensity I-L curve of GaN series LED of the present invention, and wherein the square lines are the gallium nitride based LED with low temperature p type GaN insert layer of the present invention; The triangle lines are the existing gallium nitride based LED that does not have low temperature p type GaN insert layer.
The explanation of reference number
11 Sapphire Substrate
12 low temperature GaN nucleating layers
13 involuntary Doped GaN resilient coatings
14 n type GaN contact layers
The active luminescent layer of 15 InGaN/GaN Multiple Quantum Well
151 GaN thin layers (building layer)
152 InGaN thin layers (trap layer)
16 p type AlGaN electronic barrier layers
17 p type GaN contact layers
18 negative electrodes
19 positive electrodes
21 Sapphire Substrate
22 low temperature GaN nucleating layers
23 involuntary Doped GaN resilient coatings
24 n type GaN contact layers
The active luminescent layer of 25 InGaN/GaN Multiple Quantum Well
251 GaN thin layers (building layer)
252 InGaN thin layers (trap layer)
26 low temperature p type GaN insert layers
27 p type AlGaN electronic barrier layers
28 p type GaN contact layers
29 negative electrodes
30 positive electrodes
Embodiment
Below by embodiment the present invention is carried out specific description, but the present invention is not limited to this.
Reference examples 1
Figure 1 shows that the existing GaN series LED that does not have low temperature p type GaN insert layer, it adopts the MOCVD K300 equipment preparation of U.S. Veeco company.As shown in Figure 1, this reference examples 1 with (0001) to sapphire (Al
2O
3) be substrate 11, other materials that can be used for substrate 11 comprise that also alumina single crystal, 6H-SiC, 4H-SiC or the lattice constant of R-face or A-face approach the monocrystalline oxide of nitride-based semiconductor.Adopt high-purity N H3 to do the N source, high-purity H in the preparation
2And N
2Mist do carrier gas; Trimethyl gallium or triethyl-gallium are done the Ga source, and trimethyl indium is done the In source, and trimethyl aluminium is done the Al source; N type dopant is a silane, and p type dopant is two luxuriant magnesium.
At first at substrate nucleating layer 12 and the resilient coating 13 and the n type GaN contact layer 14 on this resilient coating 13 of growing and constituting on the substrate 11 by the GaN material.Then on this n type contact layer 14, form the active luminescent layer 15 that covers its part surface, this activity luminescent layer 15 is made of the multi-quantum pit structure that GaN thin layer 151 and InGaN thin layer 152 interaction cascadings form, and what contact with the upper surface of n type contact layer 14 is GaN thin layer 151 or InGaN thin layer 152 in the multi-quantum pit structure.Part in that n type contact layer 14 is not covered by active luminescent layer 15 forms negative electrode 18 in addition.
Then form p type AlGaN electronic barrier layer 16 on active luminescent layer 15, this p type electronic barrier layer 16 is by p type Al
xGa
1-xN constitutes, wherein 0.1≤x＜0.2.On this p type electronic barrier layer 16, form p type GaN contact layer 17 then, on p type contact layer 17, form positive electrode 19 at last.
Wherein active luminescent layer 15 is made up of the gallium nitride of 4～15 periodicities and the thin layer of InGaN, and its gross thickness is 30～200nm, and wherein the thickness of each gallium nitride thin layer 151 is 4～20nm; The thickness of each InGaN thin layer 152 is 1～4nm, and by In
xGa
1-xN constitutes, wherein 0.1＜x＜0.3.
The doping content of the silane in the n type contact layer 14 is 10
18Cm
-3More than, the doping content of two luxuriant magnesium in p type electronic barrier layer 16 and the p type contact layer 17 is 10
19-10
21Cm
-3In addition, the thickness of p type electronic barrier layer 16 is 10～50 nanometers.
The concrete growth conditions of each thin layer is as follows in this GaN series LED:
(1) the substrate nucleating layer 12: 500 ℃ to 800 ℃ of reaction temperatures, reaction chamber pressure 200 be to 500Torr, carrier gas flux 10-30 liter/minute, trimethyl gallium flow 20-250 micromole/minute, ammonia flow 20-80 moles/min, growth time 1-10 minute;
(2) involuntary Doped GaN resilient coating 13: reaction temperature 950-1180 ℃, reaction chamber pressure 76-250Torr, carrier gas flux 5-20 liter/minute, the trimethyl gallium flow be the 80-400 micromole/minute, ammonia flow is the 200-800 moles/min, growth time 20-60 minute;
(3) n type GaN contact layer 14: reaction temperature 950-1150 ℃, reaction chamber pressure 76-250Torr, carrier gas flux 5-20 liter/minute, trimethyl gallium flow 80-400 micromole/minute, ammonia flow 200-800 moles/min, silane flow rate 0.2-2.0 nanomole/minute, growth time 10-40 minute;
(4) by InGaN thin layer and the active luminescent layer 15 of the formed Multiple Quantum Well of gallium nitride thin layer interaction cascading:
GaN thin layer (promptly building layer): reaction temperature 700-900 ℃, reaction chamber pressure 100-500Torr, carrier gas flux 5-20 liter/minute, ammonia flow 200-800 moles/min, trimethyl gallium flow 0.1-1.0 micromole/minute, silane flow rate 0-2.0 nanomole/minute, time 0.1-5 minute;
InGaN thin layer (being the trap layer): reaction temperature 700-850 ℃, reaction chamber pressure 100-500Torr, carrier gas flux 5-20 liter/minute, ammonia flow 200-800 moles/min, trimethyl gallium flow 0.1-1.0 micromole/minute, trimethyl indium flow 10-50 micromole/minute, time 0.1-5 minute;
The Multiple Quantum Well periodicity is 4 to 15;
(5) p type AlGaN electronic barrier layer 16: reaction temperature 700-1000 ℃, reaction chamber pressure 50-200Torr, carrier gas flux 5-20 liter/minute, ammonia flow 100-400 moles/min, trimethyl aluminium flow 20-100 micromole/minute, trimethyl gallium flow 80-200 micromole/minute, two luxuriant magnesium flows be the 150-400 nanomole/minute, time 1-10 minute;
(6) p type GaN contact layer 17: reaction temperature 950-1100 ℃, and reaction chamber pressure 200-500Torr, carrier gas flux 5-20 liter/minute, ammonia flow 200-800 moles/min, trimethyl gallium flow 80-400 micromole/minute, two luxuriant magnesium flows be the 0.5-5 micromole/minute, time 10-50 minute.
Embodiment 1
Figure 2 shows that the GaN series LED that has low temperature p type GaN insert layer according to of the present invention.It adopts the process conditions manufacturing identical with reference examples 1, different just to insert thickness between the active luminescent layer 25 of InGaN/GaN Multiple Quantum Well and p type AlGaN electronic barrier layer 27 be the low temperature p type gallium nitride insert layer 26 of 20-100 nanometer, and the lower surface of this low temperature p type gallium nitride insert layer 26 contacts with gallium nitride thin layer in the Multiple Quantum Well activity luminescent layer 25.The doping content of two luxuriant magnesium in the low temperature p type gallium nitride layer is 10
19～10
21Cm
-3
The concrete growth conditions of low temperature p type GaN insert layer 26 is as follows: reaction temperature 600-900 ℃, reaction chamber pressure 200-500Torr, carrier gas flux 5-20 liter/minute, ammonia flow 200-800 moles/min, trimethyl gallium flow 80-400 micromole/minute, two luxuriant magnesium flows be the 0.5-5 micromole/minute, time 5-20 minute.
The GaN series LED that above-mentioned two kinds of methods are obtained carries out test analysis, and the result as shown in Figure 3.By among Fig. 3 as can be seen, compare with the LED of traditional structure, under same injection current condition, it is big that LED structure of the present invention has luminous intensity, characteristics such as saturation current height.Guaranteeing that the enhancing of luminous intensity illustrates that the internal quantum efficiency of light-emitting diode has obtained effective raising under the identical situation of device technology.
Though the present invention is described in detail with concrete execution mode, concerning person skilled in the art, can under the prerequisite that does not break away from aim of the present invention and the defined scope of accessory claim, do various modifications and changes.
Claims (12)
1. GaN series LED, it comprises:
Substrate;
Resilient coating, it is positioned on the described substrate;
N type contact layer, it is positioned on the described resilient coating, is made of n type gallium nitride;
Active luminescent layer, it is positioned on the described n type contact layer and covers the part surface of described n type contact layer, and described active luminescent layer is made of the multi-quantum pit structure that InGaN thin layer and gallium nitride thin layer interaction cascading form;
Negative electrode, it is positioned at described n type contact layer not by on the upper surface of described active luminescent layer covering;
P type electronic barrier layer, it is positioned on the described active luminescent layer, is made of aluminium gallium nitride alloy;
P type contact layer, it is positioned on the described p type electronic barrier layer, is made of p type gallium nitride; And
Positive electrode, it is positioned on the described p type contact layer and covers the part surface of described p type contact layer; It is characterized in that,
Described GaN series LED comprises that also thickness is the low temperature p type gallium nitride layer of 20nm～100nm, described low temperature p type gallium nitride layer is between described active luminescent layer and described p type electronic barrier layer, and the lower surface of described low temperature p type gallium nitride layer contacts with gallium nitride thin layer in the described active luminescent layer.
2. GaN series LED as claimed in claim 1 is characterized in that, the growth temperature of described low temperature p type gallium nitride layer is 600 ℃～900 ℃.
3. GaN series LED as claimed in claim 1 or 2 is characterized in that, described low temperature p type gallium nitride layer is a p type dopant with two luxuriant magnesium, and the doping content of two luxuriant magnesium is 10
19～10
21Cm
-3
4. GaN series LED as claimed in claim 1 or 2, it is characterized in that, described active luminescent layer is made up of the gallium nitride of 4～15 periodicities and the thin layer of InGaN, and its gross thickness is 30～200nm, and wherein the thickness of each gallium nitride thin layer is 4～20nm; The thickness of each InGaN thin layer is 1～4nm, and by In
xGa
1-xN constitutes, wherein 0.1＜x＜0.3.
5. GaN series LED as claimed in claim 1 or 2 is characterized in that, the growth temperature of described p type electronic barrier layer is 700 ℃～1000 ℃.
6. GaN series LED as claimed in claim 1 or 2 is characterized in that, the thickness of described p type electronic barrier layer is 10～50nm.
7. GaN series LED as claimed in claim 1 or 2 is characterized in that, described p type electronic barrier layer is by p type Al
xGa
1-xN constitutes, wherein 0.1≤x＜0.2.
8. GaN series LED as claimed in claim 1 or 2 is characterized in that, described p type electronic barrier layer is a p type dopant with two luxuriant magnesium, and the doping content of two luxuriant magnesium is 10
19～10
21Cm
-3
9. GaN series LED as claimed in claim 1 or 2 is characterized in that, described n type contact layer is n type dopant with silane, and the doping content of silane is 10
18Cm
-3More than.
10. GaN series LED as claimed in claim 1 or 2 is characterized in that, described p type contact layer is a p type dopant with two luxuriant magnesium, and the doping content of two luxuriant magnesium is 10
19～10
21Cm
-3
11. GaN series LED as claimed in claim 1 or 2 is characterized in that, described substrate is made by the monocrystalline oxide that alumina single crystal, 6H-SiC, 4H-SiC or the lattice constant of C-face, R-face or A-face approaches nitride-based semiconductor.
12. GaN series LED as claimed in claim 1 or 2 is characterized in that, described resilient coating is made of gallium nitride based material.
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| CN102832306A (en) * | 2012-08-29 | 2012-12-19 | 扬州中科半导体照明有限公司 | Epitaxial structure of high-brightness light emitting diode and implementation method thereof |
| CN103050592A (en) * | 2013-01-06 | 2013-04-17 | 湘能华磊光电股份有限公司 | LED (Light Emitting Diode) epitaxial structure with P (Positive) type superlattice and preparation method thereof |
| CN103137807A (en) * | 2013-02-22 | 2013-06-05 | 中国科学院半导体研究所 | Green ray light-emitting diode (LED) epitaxial structure with stress relief layer and production method thereof |
| CN105591004A (en) * | 2016-03-29 | 2016-05-18 | 苏州晶湛半导体有限公司 | LED epitaxial wafer based on graphical Si substrate and making method of LED epitaxial wafer |
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- 2010-05-18 CN CN2010201982334U patent/CN201766093U/en not_active Expired - Fee Related
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102832306A (en) * | 2012-08-29 | 2012-12-19 | 扬州中科半导体照明有限公司 | Epitaxial structure of high-brightness light emitting diode and implementation method thereof |
| CN102832306B (en) * | 2012-08-29 | 2015-09-30 | 扬州中科半导体照明有限公司 | A kind of epitaxial structure of high brightness LED and its implementation |
| CN103050592A (en) * | 2013-01-06 | 2013-04-17 | 湘能华磊光电股份有限公司 | LED (Light Emitting Diode) epitaxial structure with P (Positive) type superlattice and preparation method thereof |
| CN103050592B (en) * | 2013-01-06 | 2016-03-02 | 湘能华磊光电股份有限公司 | There is LED epitaxial structure of P type superlattice and preparation method thereof |
| CN103137807A (en) * | 2013-02-22 | 2013-06-05 | 中国科学院半导体研究所 | Green ray light-emitting diode (LED) epitaxial structure with stress relief layer and production method thereof |
| CN105591004A (en) * | 2016-03-29 | 2016-05-18 | 苏州晶湛半导体有限公司 | LED epitaxial wafer based on graphical Si substrate and making method of LED epitaxial wafer |
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