WO2017202328A1 - Gallium nitride-based light emitting diode and preparation method therefor - Google Patents

Gallium nitride-based light emitting diode and preparation method therefor Download PDF

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WO2017202328A1
WO2017202328A1 PCT/CN2017/085655 CN2017085655W WO2017202328A1 WO 2017202328 A1 WO2017202328 A1 WO 2017202328A1 CN 2017085655 W CN2017085655 W CN 2017085655W WO 2017202328 A1 WO2017202328 A1 WO 2017202328A1
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layer
gallium
type nitride
electron blocking
nitrogen
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French (fr)
Chinese (zh)
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张东炎
刘�文
叶大千
刘晓峰
高文浩
王笃祥
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厦门三安光电有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
    • H01L33/145—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof

Definitions

  • the present invention relates to the field of semiconductor optoelectronic device fabrication, and more particularly to a high photo efficacy gallium nitride based LED fabrication technique.
  • 1 shows a conventional commercial gallium polar gallium nitride-based LED structure diagram in which a multi-quantum well light-emitting layer 104 and an electron blocking layer 105 have a strong polarization field due to a difference in lattice constant.
  • 2 shows a conventional commercial gallium polar gallium nitride-based LED band structure.
  • the electron blocking layer 104 generates a positive charge at the interface due to tensile strain, causing the band to bend downward, and the electron blocking layer is in the conduction band.
  • the effective barrier height is lowered, and the effective barrier of the valence band is increased, which not only reduces the electron blocking ability of the electron blocking layer, but also increases the barrier of the p-type side hole injection into the multiple quantum well light-emitting layer.
  • the object of the present invention is to provide a high-efficiency gallium nitride-based LED and a preparation method thereof, which can weaken the band bending effect, improve the electron blocking ability, reduce the blocking of holes, and enhance the device. Photoelectric conversion efficiency.
  • the technical solution of the present invention is: a gallium nitride-based light emitting diode, comprising: an N-type nitride layer, a gallium polarity light-emitting layer, a nitrogen-polarity electron blocking layer, a P-type nitride layer, and a P
  • the nitride contact layer, the polarization inversion design between the nitrogen polar electron blocking layer and the gallium polar light emitting layer can reduce the energy band bending caused by polarization, and can not only increase the electron overshoot to the P type nitride layer
  • the barrier height is high, and the potential for hole injection into the multiple quantum well region can be reduced.
  • the low temperature buffer layer to the multiple quantum well light emitting layer portion are grown by MOCVD technology, Thereafter, the substrate is transferred to a molecular beam epitaxy reaction chamber to grow a nitrogen polar electron blocking layer, a P-type nitride layer, and a P-type nitride contact layer.
  • the molecular beam epitaxy technique is used to grow the nitrogen-polar electron blocking layer ⁇ to be nitrogen-rich, that is, the molar amount of the group III source reaching the surface of the substrate is smaller than the molar amount of the group V source.
  • the molecular beam epitaxy technique has a temperature of growing the nitrogen polar electron blocking layer of 700 to 1000 ° C, preferably 850 ° C.
  • the nitrogen polarity electron blocking layer may be a bulk material or a superlattice structure, and the composition or the impurity may be constant or gradual.
  • the p-type nitride layer and the p-type nitride contact layer may be a nitrogen polarity, a gallium polarity, or a combination of the two.
  • the molecular beam epitaxy technique is used to grow the nitrogen polar electron blocking layer, which is easy to implement, does not require the Mg modulation technology in the MOCVD technology, has a steeper interface with the multi-quantum well light-emitting layer, and has a wider Growth window.
  • the molecular beam epitaxy technique is used to grow the nitrogen polar electron blocking layer, the P-type nitride layer and the P-type nitride contact layer, and the reaction chamber has high cleanliness and is a single source.
  • the p-type nitride layer and the p-type nitride contact layer may also adopt gallium-rich growth conditions, that is, the molar amount of the group III source reaching the surface of the substrate is larger than the molar amount of the group V source.
  • the polarity of the nitrogen-polarity electron blocking layer changes due to the polarity change, and the polarization charge at the interface with the multi-quantum well light-emitting layer changes from the positive polarity charge to the negative polarity charge, and the energy band is bent downward to weaken, so that the electron blocking The layer enhances the electron blocking ability, but the hole blocking ability is weakened.
  • the above method can improve the light efficiency of the device from both blocking electrons and enhancing hole injection, and improve the droop effect.
  • the invention adopts an electron blocking layer of a nitrogen polar surface, so that the polarization charge at the interface with the multi-quantum well light-emitting layer changes from a positive charge to a negative charge, which weakens the band bending effect and improves the electron blocking ability. ⁇ , weaken the blocking of holes and improve the photoelectric conversion efficiency of the device.
  • the cleansing of the reaction chamber of the molecular beam epitaxy The higher the degree, the steeper the interface of each layer, which is beneficial to the performance improvement of the device.
  • FIG. 1 is a structural diagram of a conventional commercial gallium polar gallium nitride based LED.
  • FIG. 2 is a structural diagram of a conventional commercial gallium polarity gallium nitride based LED energy band.
  • FIG 3 is a side view of a high efficacy GaN-based LED prepared by the present invention.
  • FIG. 4 is a structural diagram of a high-efficiency gallium nitride-based LED energy band prepared by the present invention.
  • FIG. 5 is a block diagram of another LED of the present invention.
  • a high-efficiency GaN-based LED of the present invention and a method for fabricating the same are more easily understood, and the practical features thereof are described. Further embodiments of the present invention will be further described in detail below with reference to the accompanying drawings. . However, the following description and description of the embodiments do not impose any limitation on the scope of the present invention.
  • the present invention provides a high-efficiency GaN-based LED and a preparation method thereof, and the preparation process mainly comprises the following steps: 3 shows a high-efficiency gallium nitride-based LED prepared by the present invention, which is sequentially from bottom to top: a substrate 100, a gallium polar low temperature buffer layer 101, and a gallium polar non-metagnatic layer 102. a gallium-polar N-type nitride layer 103, a gallium-polar multiple quantum well light-emitting layer 104, a nitrogen-polarity electron blocking layer 205, a nitrogen-polar P-type nitride layer 206, and a nitrogen-polar P-type nitride contact layer 207.
  • the nitrogen polarity electron blocking layer 205 in the above structure changes polarity due to the interface with the multiple quantum well light-emitting layer 104.
  • the charge changes from the positive charge to the negative charge, and the band is weakened downward, which increases the electron blocking ability of the electron blocking layer, but the hole blocking ability is weakened.
  • the above LED structure can improve the light efficiency of the device from both blocking electrons and enhancing hole injection, and improve the droop effect.
  • a gallium polar low temperature buffer layer 101, a gallium polar non-zinc nitride layer 102, a gallium polar N type nitride layer 103, and a gallium polar multiple quantum well light emitting layer 104 are grown on the substrate 100 by a conventional MOCVD technique. Thereafter, the substrate is transferred to a molecular beam epitaxy reaction chamber to grow a nitrogen polar electron blocking layer 205, a nitrogen polar P type nitride layer 206, and a nitrogen polar P type nitride contact layer 207.
  • the substrate 100 may be made of sapphire, silicon carbide or silicon substrate; the gallium polarity low temperature buffer layer 101 may be a combination of gallium nitride, aluminum nitride, or aluminum gallium nitride, with a film thickness between 5 and 100 nm; gallium polarity
  • the film thickness of the non-str all nitride layer 102 is between 300 and 7000 nm, preferably 3,500 nm; (the thickness of the gallium-polar N-type nitride layer 103 is greater than ⁇ ;
  • the gallium-polar multi-quantum well light-emitting layer 104 has InGaN as the well layer, GaN or AlGaN or a combination of the two is formed as a barrier layer, wherein the barrier layer has a thickness of between 3 and 150 nm and the well layer has a thickness of between 1 and 20 nm.
  • the nitrogen-polar electron blocking layer 205 is grown by a molecular beam epitaxy technique under nitrogen-rich conditions, that is, the molar amount of the group III source reaching the surface of the substrate is less than the molar amount of the group V source.
  • the temperature is raised to ⁇ 850 ° C under N source snoring conditions, and the specific growth conditions are: using N source excitation power of 500 W, N 2 flow rate of 1.5 sccm, equivalent beam current of ⁇ 1.0E-7 Torr,
  • the corresponding reaction chamber pressure is l ⁇ 2E-5 Torr;
  • the equivalent beam current of the Ga source is 5 ⁇ 7E-8 Torr, preferably ⁇ 7£-8 Torr, and the equivalent beam current of A1 is 3 ⁇ 5E-8
  • the Torr, V/III ratio is ⁇ 0.7, which is a nitrogen-rich condition, ensuring that the amount of the Group III source reaching the surface of the substrate is less than the molar amount of the Group V source.
  • the resulting electron blocking layer 205A1 has a composition of 10 to 30%, preferably -20%, and a thickness of 500 to 150. 0A.
  • the above-mentioned nitrogen-polarity electron blocking layer 205 may be a bulk material of an AlGaN layer, or may be a superlattice structure of AlGaN/GaN, and the A1 component may be constant or gradual, and may also be a poor source of Mg. miscellaneous.
  • the nitrogen polar P-type nitride layer is grown under the following conditions: a growth temperature of 750 to 1050 ° C, preferably 870 ° C, an excitation power of 500 W for N source, and a flow rate of 1.5 sccm for N 2 , equivalent
  • the beam current is ⁇ 1.0E-7 Torr, and the corresponding reaction chamber pressure is l ⁇ 2E-5 Torr.
  • the equivalent beam current of the adopted Ga source is 6 ⁇ 9E-8
  • Torr preferably ⁇ 8.5E-8 Torr
  • the equivalent beam current of Mg is 0.5 ⁇ 1 ⁇ -9 Torr
  • the V/III ratio is ⁇ 0.85
  • the thickness is 400 ⁇ 1500A
  • the impurity concentration is 0.7 ⁇ 1E19/cm 3 .
  • the nitrogen polar P-type nitride contact layer is grown under the following conditions: a growth temperature of 700 to 950 ° C, preferably ⁇ 700 ° C, an excitation power of 500 W for N source, and a flow rate of 1.5 sccm for N 2 .
  • the equivalent beam current is ⁇ 1.0E-7 Torr, and the corresponding reaction chamber pressure is l ⁇ 2E-5 Torr.
  • the equivalent beam current of the Ga source used is 6 ⁇ 9E-8 Torr, preferably ⁇ 8.5E-8 Torr, the equivalent beam flow of Mg is 3 ⁇ 8E-9 Torr, and the V/III ratio is ⁇ 0.85, thickness It is 10 ⁇ 100A, and the miscellaneous concentration is 0.7 ⁇ lE20/cm 3 .
  • the nitrogen polar electron blocking layer prepared by the above method changes in polarity due to a change in polarity, and the polarized charge at the interface with the multi-quantum well emitting layer changes from a positively charged charge to a negatively charged electric charge, and the energy band is bent downward and weakened.
  • the electron blocking layer enhances the electron blocking ability, but the hole blocking ability is weakened, and the Droop effect of the device is improved.
  • the growth of the p-type layer by molecular beam epitaxy makes the interface between the multi-quantum well region and the p-type layer steeper, and the growth temperature is about ⁇ 100 °C lower than that of the MOCVD technique, and the temperature damage of the multi-quantum well region is relatively high. Light, it can prevent the indium volatilization in the multiple quantum well region and improve the internal quantum efficiency of the multiple quantum well region.
  • Embodiment 1 differs from Embodiment 1 in that the P-type nitride layer and the P-type nitride contact layer are gallium-polar.
  • the gallium polar low temperature buffer layer 101, the gallium polar non-zinc nitride layer 102, the gallium polar N type nitride layer 103, and gallium are first grown on the substrate 100 by a conventional MOCVD technique.
  • the substrate is transferred to a molecular beam epitaxy reaction chamber to grow a nitrogen polar electron blocking layer 205, gallium A polar P-type nitride layer 306 and a gallium-polar P-type nitride contact layer 307.
  • the nitrogen-polarity electron blocking layer 205 is grown under nitrogen-rich conditions.
  • the gallium-polar P-type nitride layer 306 and the gallium-polar P-type nitride contact layer 307 are grown under gallium-rich conditions.
  • the gallium polar P-type nitride layer is grown under the following conditions: a growth temperature of 750 to 1050 ° C, preferably 870 ° C, an excitation power of 500 W for N source, and a flow rate of 1.5 sccm for N 2 , equivalent
  • the beam current is ⁇ 1.0E-7 Torr, and the corresponding reaction chamber pressure is l ⁇ 2E-5 Torr.
  • the equivalent beam current of the adopted Ga source is 9 ⁇ 15E-8
  • Torr preferably ⁇ 1.3E-7 Torr
  • the equivalent beam current of Mg is 0.5 ⁇ 1.2E-9 Torr
  • the V/III ratio is ⁇ 1.3
  • the thickness is 400 ⁇ 1500A
  • the impurity concentration is 0.7 ⁇ 1E19/cm. 3 .
  • the growth condition of the gallium-polar P-type nitride contact layer is: growth temperature is 700-950 ° C, preferably ⁇ 700 ° C, excitation power of N source is 500 W, flow rate of N 2 is 1.5 sccm, equivalent The beam current is ⁇ 1.0E-7 Torr, and the corresponding reaction chamber pressure is l ⁇ 2E-5 Torr.
  • the equivalent beam current of the Ga source used is 9 ⁇ 15E-8 Torr, preferably ⁇ 1.3E-7 Torr, the equivalent beam flow of Mg is 5 ⁇ 9E-9 Torr, the V/III ratio is ⁇ 1.3, thickness It is 10 ⁇ 100A, and the miscellaneous concentration is 0.7 ⁇ lE20/cm 3 .

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Abstract

The present invention belongs to the field of optoelectronic device preparation. A high luminous efficiency gallium nitride-based light emitting diode (LED) and a preparation method therefor, wherein the LED may maintain a relatively high photoelectric conversion efficiency when a large electrical current is introduced, thereby mitigating the droop effect. The specific structure of the LED comprises two sections, wherein one section is a bottom layer and a light emitting layer (104) which are grown by using MOCVD technology, and the other section is a P-type layer grown by using molecular beam epitaxy technology; that is, a gallium-polar buffer layer (101), a non-doped nitride layer (102), an N-type nitride layer (103) and a multi-quantum-well luminescent layer (104) are grown on a sample by using MOCVD technology; the sample is then transferred into a molecular beam epitaxial apparatus reaction chamber for growing a nitrogen-polar electron barrier layer (205), a P-type nitride layer (206) and a P-type nitride contact layer (207). The preparation method may reduce the energy band bending caused by polarization between the electron barrier layer (205) and the multi-quantum-well luminescent layer (104), not only increasing the barrier height for electrons overshooting to a P-type layer, but also reducing the barrier for hole injection into the multi-quantum-well region.

Description

氮化镓基发光二极管及其制备方法 技术领域  Gallium nitride based light emitting diode and preparation method thereof
[0001] 本发明涉及半导体光电器件制备领域， 尤其涉及一种高光效氮化镓基 LED的制 备技术。  [0001] The present invention relates to the field of semiconductor optoelectronic device fabrication, and more particularly to a high photo efficacy gallium nitride based LED fabrication technique.
背景技术  Background technique
[0002] 宽禁带 III-V族半导体材料的迅猛发展使得高亮度发光二极管实现了绿光到近紫 外产品的商业化。 但目前商业化的 LED大部分采用 MOCVD技术在蓝宝石、 碳化 硅或者硅衬底上生长 001面的氮化物制备而成， 并且表面都是镓极性面。  [0002] The rapid development of wide-bandgap III-V semiconductor materials has enabled high-brightness light-emitting diodes to commercialize green to near-violet products. However, most of the current commercial LEDs are prepared by MOCVD technology on a 001 surface nitride grown on sapphire, silicon carbide or silicon substrates, and the surface is a gallium polar surface.
技术问题  technical problem
[0003] 图 1显示了常规商业化镓极性氮化镓基 LED结构图， 其中多量子阱发光层 104与 电子阻挡层 105之间由于晶格常数的差异， 存在较强的极化场。 图 2显示了常规 商业化镓极性氮化镓基 LED能带结构图， 电子阻挡层 104由于受到张应变在界面 处产生正电荷， 导致能带向下弯曲， 使电子阻挡层在导带的有效势垒高度降低 ， 在价带的有效势垒升高， 不仅降低了电子阻挡层对电子的阻挡能力， 而且使 p 型一侧空穴注入到多量子阱发光层的势垒升高。  1 shows a conventional commercial gallium polar gallium nitride-based LED structure diagram in which a multi-quantum well light-emitting layer 104 and an electron blocking layer 105 have a strong polarization field due to a difference in lattice constant. 2 shows a conventional commercial gallium polar gallium nitride-based LED band structure. The electron blocking layer 104 generates a positive charge at the interface due to tensile strain, causing the band to bend downward, and the electron blocking layer is in the conduction band. The effective barrier height is lowered, and the effective barrier of the valence band is increased, which not only reduces the electron blocking ability of the electron blocking layer, but also increases the barrier of the p-type side hole injection into the multiple quantum well light-emitting layer.
问题的解决方案  Problem solution
技术解决方案  Technical solution
[0004] 本发明的目的是： 提供一种高光效氮化镓基 LED及其制备方法， 其能够减弱能 带弯曲效应， 在提升电子阻挡能力的同吋， 减弱对空穴的阻挡， 提升器件光电 转换效率。  [0004] The object of the present invention is to provide a high-efficiency gallium nitride-based LED and a preparation method thereof, which can weaken the band bending effect, improve the electron blocking ability, reduce the blocking of holes, and enhance the device. Photoelectric conversion efficiency.
[0005] 本发明的技术方案为： 氮化镓基发光二极管， 包括： 一 N型氮化物层、 一镓极 性发光层、 一氮极性电子阻挡层、 一 P型氮化物层、 一 P型氮化物接触层， 所述 氮极性电子阻挡层与镓极性发光层之间的极化反转设计能够降低极化造成的能 带弯曲， 不仅能增加电子过冲到 P型氮化物层的势垒高度， 而且能降低空穴注入 到多量子阱区的势垒。  [0005] The technical solution of the present invention is: a gallium nitride-based light emitting diode, comprising: an N-type nitride layer, a gallium polarity light-emitting layer, a nitrogen-polarity electron blocking layer, a P-type nitride layer, and a P The nitride contact layer, the polarization inversion design between the nitrogen polar electron blocking layer and the gallium polar light emitting layer can reduce the energy band bending caused by polarization, and can not only increase the electron overshoot to the P type nitride layer The barrier height is high, and the potential for hole injection into the multiple quantum well region can be reduced.
[0006] 优选的， 所述低温缓冲层至多量子阱发光层部分均采用 MOCVD技术生长， 然 后将衬底转移至分子束外延反应室生长氮极性电子阻挡层、 P型氮化物层及 P型 氮化物接触层。 [0006] Preferably, the low temperature buffer layer to the multiple quantum well light emitting layer portion are grown by MOCVD technology, Thereafter, the substrate is transferred to a molecular beam epitaxy reaction chamber to grow a nitrogen polar electron blocking layer, a P-type nitride layer, and a P-type nitride contact layer.
[0007] 在上述方法中， 分子束外延技术生长氮极性电子阻挡层吋为富氮的条件， 即到 达衬底表面的 III族源摩尔量小于 V族源的摩尔量。  In the above method, the molecular beam epitaxy technique is used to grow the nitrogen-polar electron blocking layer 吋 to be nitrogen-rich, that is, the molar amount of the group III source reaching the surface of the substrate is smaller than the molar amount of the group V source.
[0008] 进一步地， 分子束外延技术生长氮极性电子阻挡层的温度为 700~1000°C， 优选 地， 为〜 850°C。 Further, the molecular beam epitaxy technique has a temperature of growing the nitrogen polar electron blocking layer of 700 to 1000 ° C, preferably 850 ° C.
[0009] 进一步地， 氮极性电子阻挡层可以是体材料， 也可以是超晶格结构， 组分或者 惨杂可以是恒定不变， 也可以是渐变的。  [0009] Further, the nitrogen polarity electron blocking layer may be a bulk material or a superlattice structure, and the composition or the impurity may be constant or gradual.
[0010] 进一步地， p型氮化物层及 p型氮化物接触层可以是氮极性， 也可以是镓极性， 也可以是两者的组合。 [0010] Further, the p-type nitride layer and the p-type nitride contact layer may be a nitrogen polarity, a gallium polarity, or a combination of the two.
[0011] 进一步地， 采用分子束外延技术生长氮极性电子阻挡层， 实现较为容易， 不需 要进行 MOCVD技术中的 Mg调制技术， 与多量子阱发光层的界面更陡峭， 并具 有较宽的生长窗口。  [0011] Further, the molecular beam epitaxy technique is used to grow the nitrogen polar electron blocking layer, which is easy to implement, does not require the Mg modulation technology in the MOCVD technology, has a steeper interface with the multi-quantum well light-emitting layer, and has a wider Growth window.
[0012] 进一步地， 采用分子束外延技术生长氮极性电子阻挡层、 P型氮化物层及 P型氮 化物接触层吋为高真空条件， 反应室洁净度较高， 并且为单质源， 没有 H等元素 的引入， Mg元素的活化效率更高。  [0012] Further, the molecular beam epitaxy technique is used to grow the nitrogen polar electron blocking layer, the P-type nitride layer and the P-type nitride contact layer, and the reaction chamber has high cleanliness and is a single source. The introduction of elements such as H, the activation efficiency of Mg element is higher.
[0013] 进一步地， p型氮化物层及 p型氮化物接触层也可以采用富镓的生长条件， 即到 达衬底表面的 III族源摩尔量大于 V族源的摩尔量。 Further, the p-type nitride layer and the p-type nitride contact layer may also adopt gallium-rich growth conditions, that is, the molar amount of the group III source reaching the surface of the substrate is larger than the molar amount of the group V source.
[0014] 进一步地， 氮极性电子阻挡层由于极性发生变化， 导致与多量子阱发光层界面 处极化电荷由正极化电荷变为负极化电荷， 能带向下弯曲减弱， 使电子阻挡层 对电子阻挡能力增强， 但对空穴阻挡能力减弱。 [0014] Further, the polarity of the nitrogen-polarity electron blocking layer changes due to the polarity change, and the polarization charge at the interface with the multi-quantum well light-emitting layer changes from the positive polarity charge to the negative polarity charge, and the energy band is bent downward to weaken, so that the electron blocking The layer enhances the electron blocking ability, but the hole blocking ability is weakened.
[0015] 进一步地， 上述方法能从阻挡电子和提升空穴注入两方面提升器件的光效， 改 善 droop效应。 [0015] Further, the above method can improve the light efficiency of the device from both blocking electrons and enhancing hole injection, and improve the droop effect.
发明的有益效果  Advantageous effects of the invention
有益效果  Beneficial effect
[0016] 本发明采用氮极性面的电子阻挡层， 使与多量子阱发光层界面处的极化电荷由 正电荷变为负电荷， 减弱了能带弯曲效应， 在提升电子阻挡能力的同吋， 减弱 对空穴的阻挡， 提升器件光电转换效率。 另外， 分子束外延技术反应室的洁净 度较高， 使各层界面比较陡峭， 有利于器件性能提升。 [0016] The invention adopts an electron blocking layer of a nitrogen polar surface, so that the polarization charge at the interface with the multi-quantum well light-emitting layer changes from a positive charge to a negative charge, which weakens the band bending effect and improves the electron blocking ability.吋, weaken the blocking of holes and improve the photoelectric conversion efficiency of the device. In addition, the cleansing of the reaction chamber of the molecular beam epitaxy The higher the degree, the steeper the interface of each layer, which is beneficial to the performance improvement of the device.
对附图的简要说明  Brief description of the drawing
附图说明  DRAWINGS
[0017] 图 1为常规商业化镓极性氮化镓基 LED结构图。  1 is a structural diagram of a conventional commercial gallium polar gallium nitride based LED.
[0018] 图 2为常规商业化镓极性氮化镓基 LED能带结构图。  2 is a structural diagram of a conventional commercial gallium polarity gallium nitride based LED energy band.
[0019] 图 3为采用本发明制备的一种高光效氮化镓基 LED侧视图。  3 is a side view of a high efficacy GaN-based LED prepared by the present invention.
[0020] 图 4为本发明制备的一种高光效氮化镓基 LED能带结构图。  4 is a structural diagram of a high-efficiency gallium nitride-based LED energy band prepared by the present invention.
[0021] 图 5为本发明公幵的另一 LED结构图。  [0021] FIG. 5 is a block diagram of another LED of the present invention.
[0022] 图中各标号表示如下：  [0022] The numbers in the figures are as follows:
[0023] 100衬底；  [0023] 100 substrates;
[0024] 101镓极性低温缓冲层；  [0024] 101 gallium polar low temperature buffer layer;
[0025] 102镓极性非惨氮化物层；  [0025] 102 gallium polarity non-zinc nitride layer;
[0026] 103镓极性 N型氮化物层；  [0026] 103 gallium polarity N-type nitride layer;
[0027] 104镓极性多量子阱发光层；  [0027] 104 gallium polarity multiple quantum well light-emitting layer;
[0028] 105镓极性电子阻挡层；  [0028] 105 gallium polarity electron blocking layer;
[0029] 106镓极性 P型氮化物层；  [0029] 106 gallium polarity P-type nitride layer;
[0030] 107镓极性 P型氮化物接触层  [0030] 107 gallium polarity P-type nitride contact layer
[0031] 205氮极性电子阻挡层；  [0031] 205 nitrogen polarity electron blocking layer;
[0032] 206氮极性 P型氮化物层；  [0032] 206 nitrogen polar P-type nitride layer;
[0033] 207氮极性 P型氮化物接触层。  [0033] 207 nitrogen polar P-type nitride contact layer.
发明实施例  Invention embodiment
本发明的实施方式  Embodiments of the invention
[0034] 使本发明一种高光效氮化镓基 LED及其制备方法更易于理解其实质性特点及其 所具的实用性， 下面便结合附图对本发明若干具体实施例作进一步的详细说明 。 但以下关于实施例的描述及说明对本发明保护范围不构成任何限制。  [0034] A high-efficiency GaN-based LED of the present invention and a method for fabricating the same are more easily understood, and the practical features thereof are described. Further embodiments of the present invention will be further described in detail below with reference to the accompanying drawings. . However, the following description and description of the embodiments do not impose any limitation on the scope of the present invention.
[0035] 实施例 1.  [0035] Example 1.
[0036] 本发明提供一种高光效氮化镓基 LED及其制备方法， 制备工艺主要包含以下步 骤： [0037] 附图 3示意了采用本发明制备的一种高光效氮化镓基 LED, 从下至上依次为： 衬底 100、 镓极性低温缓冲层 101、 镓极性非惨氮化物层 102、 镓极性 N型氮化物 层 103、 镓极性多量子阱发光层 104、 氮极性电子阻挡层 205、 氮极性 P型氮化物 层 206、 氮极性 P型氮化物接触层 207。 [0036] The present invention provides a high-efficiency GaN-based LED and a preparation method thereof, and the preparation process mainly comprises the following steps: 3 shows a high-efficiency gallium nitride-based LED prepared by the present invention, which is sequentially from bottom to top: a substrate 100, a gallium polar low temperature buffer layer 101, and a gallium polar non-metagnatic layer 102. a gallium-polar N-type nitride layer 103, a gallium-polar multiple quantum well light-emitting layer 104, a nitrogen-polarity electron blocking layer 205, a nitrogen-polar P-type nitride layer 206, and a nitrogen-polar P-type nitride contact layer 207.
[0038] 图 4显示了上述高光效氮化镓基 LED能带结构图。 与图 2所示的常规商业化镓极 性氮化镓基 LED能带结构图对比， 上述结构中氮极性电子阻挡层 205由于极性发 生变化， 导致与多量子阱发光层 104界面处极化电荷由正极化电荷变为负极化电 荷， 能带向下弯曲减弱， 使电子阻挡层对电子阻挡能力增强， 但对空穴阻挡能 力减弱。 上述 LED结构能从阻挡电子和提升空穴注入两方面提升器件的光效， 改 善 droop效应。  4 shows the above-described high-efficiency gallium nitride-based LED energy band structure diagram. Compared with the conventional commercial gallium polarity gallium nitride-based LED energy band structure diagram shown in FIG. 2, the nitrogen polarity electron blocking layer 205 in the above structure changes polarity due to the interface with the multiple quantum well light-emitting layer 104. The charge changes from the positive charge to the negative charge, and the band is weakened downward, which increases the electron blocking ability of the electron blocking layer, but the hole blocking ability is weakened. The above LED structure can improve the light efficiency of the device from both blocking electrons and enhancing hole injection, and improve the droop effect.
[0039] 下面结合制备方法对上述氮化镓基 LED进行详细说明。  [0039] The above gallium nitride-based LED will be described in detail below in conjunction with the preparation method.
[0040] 采用常规 MOCVD技术于衬底 100上生长镓极性低温缓冲层 101、 镓极性非惨氮 化物层 102、 镓极性 N型氮化物层 103、 镓极性多量子阱发光层 104后， 将衬底转 移至分子束外延反应室中生长氮极性电子阻挡层 205、 氮极性 P型氮化物层 206和 氮极性 P型氮化物接触层 207。 其中衬底 100可选用蓝宝石、 碳化硅或者硅衬底； 镓极性低温缓冲层 101可以为氮化镓、 氮化铝、 或铝镓氮结合， 膜厚在 5~100nm 之间； 镓极性非惨氮化物层 102的膜厚在 300~7000nm之间， 优选 3500nm; (镓 极性 N型氮化物层 103的厚度大于 Ιμηι; 镓极性多量子阱发光层 104以 InGaN作为 阱层、 以 GaN或 AlGaN或二者组合作为垒层构成， 其中垒层厚度在 3~150nm之间 、 阱层厚度在 l~20nm之间。  [0040] A gallium polar low temperature buffer layer 101, a gallium polar non-zinc nitride layer 102, a gallium polar N type nitride layer 103, and a gallium polar multiple quantum well light emitting layer 104 are grown on the substrate 100 by a conventional MOCVD technique. Thereafter, the substrate is transferred to a molecular beam epitaxy reaction chamber to grow a nitrogen polar electron blocking layer 205, a nitrogen polar P type nitride layer 206, and a nitrogen polar P type nitride contact layer 207. The substrate 100 may be made of sapphire, silicon carbide or silicon substrate; the gallium polarity low temperature buffer layer 101 may be a combination of gallium nitride, aluminum nitride, or aluminum gallium nitride, with a film thickness between 5 and 100 nm; gallium polarity The film thickness of the non-str all nitride layer 102 is between 300 and 7000 nm, preferably 3,500 nm; (the thickness of the gallium-polar N-type nitride layer 103 is greater than Ιμηι; the gallium-polar multi-quantum well light-emitting layer 104 has InGaN as the well layer, GaN or AlGaN or a combination of the two is formed as a barrier layer, wherein the barrier layer has a thickness of between 3 and 150 nm and the well layer has a thickness of between 1 and 20 nm.
[0041] (1) 生长氮极性电子阻挡层 205  (1) Growing nitrogen polar electron blocking layer 205
[0042] 在本实施例中， 在富氮的条件采用分子束外延技术生长氮极性电子阻挡层 205 ， 即到达衬底表面的 III族源摩尔量小于 V族源的摩尔量。 具体为： 在 N源打幵条 件下升温至〜 850°C， 具体生长条件为： 采用 N源激发功率为 500 W， N 2流量为 1.5 sccm, 等效束流为〜 1.0E-7 Torr， 对应反应室压力为 l~2E-5 Torr; 采用 Ga源的等 效束流为 5~7E-8 Torr， 优选地为~7£-8 Torr， A1的等效束流为 3~5E-8 Torr， V/III 比为〜 0.7， 为富氮条件， 确保到达衬底表面的 III族源摩尔量小于 V族源的摩尔量 。 生长得到的电子阻挡层 205A1组分为 10~30%， 优选地为〜 20%， 厚度为 500~150 0A。 In the present embodiment, the nitrogen-polar electron blocking layer 205 is grown by a molecular beam epitaxy technique under nitrogen-rich conditions, that is, the molar amount of the group III source reaching the surface of the substrate is less than the molar amount of the group V source. Specifically, the temperature is raised to ~ 850 ° C under N source snoring conditions, and the specific growth conditions are: using N source excitation power of 500 W, N 2 flow rate of 1.5 sccm, equivalent beam current of ~ 1.0E-7 Torr, The corresponding reaction chamber pressure is l~2E-5 Torr; the equivalent beam current of the Ga source is 5~7E-8 Torr, preferably ~7£-8 Torr, and the equivalent beam current of A1 is 3~5E-8 The Torr, V/III ratio is ~0.7, which is a nitrogen-rich condition, ensuring that the amount of the Group III source reaching the surface of the substrate is less than the molar amount of the Group V source. The resulting electron blocking layer 205A1 has a composition of 10 to 30%, preferably -20%, and a thickness of 500 to 150. 0A.
[0043] 上述氮极性电子阻挡层 205可以是 AlGaN层的体材料， 也可以是 AlGaN/GaN的 超晶格结构， A1组分可以恒定的， 也可以渐变的， 也可以进行 Mg源的惨杂。  [0043] The above-mentioned nitrogen-polarity electron blocking layer 205 may be a bulk material of an AlGaN layer, or may be a superlattice structure of AlGaN/GaN, and the A1 component may be constant or gradual, and may also be a poor source of Mg. miscellaneous.
[0044] (2) 生长氮极性 P型氮化物层 206 (2) Growing nitrogen polarity P-type nitride layer 206
[0045] 氮极性 P型氮化物层的生长条件为： 生长温度为 750~1050°C， 优选地为〜 870°C ， 采用 N源激发功率为 500W， N 2流量为 1.5 sccm， 等效束流为〜 1.0E-7 Torr， 对 应反应室压力为 l~2E-5 Torr。 采用的 Ga源的等效束流为 6~9E-8 [0045] The nitrogen polar P-type nitride layer is grown under the following conditions: a growth temperature of 750 to 1050 ° C, preferably 870 ° C, an excitation power of 500 W for N source, and a flow rate of 1.5 sccm for N 2 , equivalent The beam current is ~1.0E-7 Torr, and the corresponding reaction chamber pressure is l~2E-5 Torr. The equivalent beam current of the adopted Ga source is 6~9E-8
Torr, 优选地为〜 8.5E-8 Torr， Mg的等效束流为 0.5~1Ε-9 Torr， V/III比为〜 0.85， 厚度为 400~1500A， 惨杂浓度为 0.7~1E19 /cm 3。 Torr, preferably ~ 8.5E-8 Torr, the equivalent beam current of Mg is 0.5~1Ε-9 Torr, the V/III ratio is ~0.85, the thickness is 400~1500A, and the impurity concentration is 0.7~1E19/cm 3 .
[0046] (3) 生长氮极性 P型氮化物接触层 207  (3) Growth Nitrogen Polarity P-type Nitride Contact Layer 207
[0047] 氮极性 P型氮化物接触层的生长条件为： 生长温度为 700~950°C， 优选地为〜 700 °C， 采用 N源激发功率为 500 W， N 2流量为 1.5 sccm， 等效束流为〜 1.0E-7 Torr， 对应反应室压力为 l~2E-5 Torr。 采用的 Ga源的等效束流为 6~9E-8 Torr， 优选地 为〜 8.5E-8 Torr， Mg的等效束流为 3~8E-9 Torr， V/III比为〜 0.85， 厚度为 10~100A ， 惨杂浓度为 0.7~lE20 /cm 3。 [0047] The nitrogen polar P-type nitride contact layer is grown under the following conditions: a growth temperature of 700 to 950 ° C, preferably ~ 700 ° C, an excitation power of 500 W for N source, and a flow rate of 1.5 sccm for N 2 . The equivalent beam current is ~ 1.0E-7 Torr, and the corresponding reaction chamber pressure is l~2E-5 Torr. The equivalent beam current of the Ga source used is 6~9E-8 Torr, preferably ~8.5E-8 Torr, the equivalent beam flow of Mg is 3~8E-9 Torr, and the V/III ratio is ~0.85, thickness It is 10~100A, and the miscellaneous concentration is 0.7~lE20/cm 3 .
[0048] 采用上述方法制备的氮极性电子阻挡层由于极性发生变化， 导致与多量子阱发 光层界面处极化电荷由正极化电荷变为负极化电荷， 能带向下弯曲减弱， 使电 子阻挡层对电子阻挡能力增强， 但对空穴阻挡能力减弱， 改善器件的 Droop效应 。 同吋， 采用分子束外延技术生长 p型层使多量子阱区与 p型层之间的界面更陡 峭， 而且生长温度较 MOCVD技术低〜 100°C左右， 对于多量子阱区的温度破坏较 轻， 能够防止多量子阱区的铟挥发， 提升多量子阱区的内量子效率。  [0048] The nitrogen polar electron blocking layer prepared by the above method changes in polarity due to a change in polarity, and the polarized charge at the interface with the multi-quantum well emitting layer changes from a positively charged charge to a negatively charged electric charge, and the energy band is bent downward and weakened. The electron blocking layer enhances the electron blocking ability, but the hole blocking ability is weakened, and the Droop effect of the device is improved. At the same time, the growth of the p-type layer by molecular beam epitaxy makes the interface between the multi-quantum well region and the p-type layer steeper, and the growth temperature is about ~100 °C lower than that of the MOCVD technique, and the temperature damage of the multi-quantum well region is relatively high. Light, it can prevent the indium volatilization in the multiple quantum well region and improve the internal quantum efficiency of the multiple quantum well region.
[0049] 实施例 2  Example 2
[0050] 本实施例区别于实施例 1在于： P型氮化物层及 P型氮化物接触层是镓极性的。  [0050] This embodiment differs from Embodiment 1 in that the P-type nitride layer and the P-type nitride contact layer are gallium-polar.
在氮极性电子阻挡层后采用镓极性的 P型氮化物层、 P型氮化物接触层能够使器 件表面更为平整， 有利于后续芯片工艺电极制备， 如图 5。  The use of a gallium-polar P-type nitride layer and a P-type nitride contact layer after the nitrogen-polarity electron blocking layer can make the surface of the device more flat, which is advantageous for subsequent chip process electrode preparation, as shown in FIG.
[0051] 在本实施例中， 同样先采用常规 MOCVD技术于衬底 100上生长镓极性低温缓冲 层 101、 镓极性非惨氮化物层 102、 镓极性 N型氮化物层 103、 镓极性多量子阱发 光层 104后， 将衬底转移至分子束外延反应室中生长氮极性电子阻挡层 205、 镓 极性 P型氮化物层 306和镓极性 P型氮化物接触层 307。 其中氮极性电子阻挡层 205 在富氮条件下生长， 其具体条件可参照实施例 1， 镓极性 P型氮化物层 306和镓极 性 P型氮化物接触层 307在富镓条件下生长， 具体如下。 [0051] In this embodiment, the gallium polar low temperature buffer layer 101, the gallium polar non-zinc nitride layer 102, the gallium polar N type nitride layer 103, and gallium are first grown on the substrate 100 by a conventional MOCVD technique. After the polar multiple quantum well light-emitting layer 104, the substrate is transferred to a molecular beam epitaxy reaction chamber to grow a nitrogen polar electron blocking layer 205, gallium A polar P-type nitride layer 306 and a gallium-polar P-type nitride contact layer 307. The nitrogen-polarity electron blocking layer 205 is grown under nitrogen-rich conditions. For specific conditions, refer to Example 1, the gallium-polar P-type nitride layer 306 and the gallium-polar P-type nitride contact layer 307 are grown under gallium-rich conditions. , details as follows.
[0052] (1) 生长镓极性 P型氮化物层 306 (1) Growing gallium polarity P-type nitride layer 306
[0053] 镓极性 P型氮化物层的生长条件为： 生长温度为 750~1050°C， 优选地为〜 870°C ， 采用 N源激发功率为 500 W， N2流量为 1.5 sccm， 等效束流为〜 1.0E-7 Torr， 对 应反应室压力为 l~2E-5 Torr。 采用的 Ga源的等效束流为 9~15E-8  [0053] The gallium polar P-type nitride layer is grown under the following conditions: a growth temperature of 750 to 1050 ° C, preferably 870 ° C, an excitation power of 500 W for N source, and a flow rate of 1.5 sccm for N 2 , equivalent The beam current is ~1.0E-7 Torr, and the corresponding reaction chamber pressure is l~2E-5 Torr. The equivalent beam current of the adopted Ga source is 9~15E-8
Torr, 优选地为〜 1.3E-7 Torr， Mg的等效束流为 0.5~1.2E-9 Torr， V/III比为〜 1.3， 厚度为 400~1500A， 惨杂浓度为 0.7~1E19 /cm 3。 Torr, preferably ~1.3E-7 Torr, the equivalent beam current of Mg is 0.5~1.2E-9 Torr, the V/III ratio is ~1.3, the thickness is 400~1500A, and the impurity concentration is 0.7~1E19/cm. 3 .
[0054] (2) 生长镓极性 p型氮化物接触层 307  (2) Growing gallium polarity p-type nitride contact layer 307
[0055] 镓极性 P型氮化物接触层的生长条件为： 生长温度为 700~950°C， 优选地为〜 700 °C， 采用 N源激发功率为 500W， N2流量为 1.5 sccm， 等效束流为〜 1.0E-7 Torr， 对应反应室压力为 l~2E-5 Torr。 采用的 Ga源的等效束流为 9~15E-8 Torr， 优选地 为〜 1.3E-7 Torr， Mg的等效束流为 5~9E-9 Torr， V/III比为〜 1.3， 厚度为 10~100A ， 惨杂浓度为 0.7~lE20 /cm 3。 [0055] The growth condition of the gallium-polar P-type nitride contact layer is: growth temperature is 700-950 ° C, preferably ~ 700 ° C, excitation power of N source is 500 W, flow rate of N 2 is 1.5 sccm, equivalent The beam current is ~1.0E-7 Torr, and the corresponding reaction chamber pressure is l~2E-5 Torr. The equivalent beam current of the Ga source used is 9~15E-8 Torr, preferably ~1.3E-7 Torr, the equivalent beam flow of Mg is 5~9E-9 Torr, the V/III ratio is ~1.3, thickness It is 10~100A, and the miscellaneous concentration is 0.7~lE20/cm 3 .
[0056] 以上所述仅是本发明的优选实施方式， 应当指出， 对于本技术领域的普通技术 人员， 在不脱离本发明原理的前提下， 还可以做出若干改进和润饰， 这些改进 和润饰也应视为本发明的保护范围。  The above description is only a preferred embodiment of the present invention, and it should be noted that those skilled in the art can also make several improvements and retouchings without departing from the principles of the present invention. It should also be considered as the scope of protection of the present invention.

Claims

权利要求书 Claim
氮化镓基发光二极管， 依次包括： N型氮化物层、 发光层、 电子阻挡 层、 P型氮化物层和 P型氮化物接触层， 其特征在于： 发光层为镓极 性氮化物层， 电子阻挡层为氮极性氮化物层， 所述氮极性电子阻挡层 与镓极性发光层之间的极化反转降低极化造成的能带弯曲。  The gallium nitride-based light emitting diode comprises: an N-type nitride layer, a light-emitting layer, an electron blocking layer, a P-type nitride layer and a P-type nitride contact layer, wherein the light-emitting layer is a gallium polar nitride layer, The electron blocking layer is a nitrogen polar nitride layer, and polarization inversion between the nitrogen polar electron blocking layer and the gallium polar light emitting layer reduces band bending caused by polarization.
根据权利要求 1所述的氮化镓基发光二极管， 其特征在于： 所述 P型电 子阻挡层由于极性发生变化， 导致与发光层界面处极化电荷由正极化 电荷变为负极化电荷， 使能带向下弯曲减弱， 使电子阻挡层对电子阻 挡能力增强， 但对空穴阻挡能力减弱。  The gallium nitride-based light-emitting diode according to claim 1, wherein: the P-type electron blocking layer changes in polarity, and the polarization charge at the interface with the light-emitting layer changes from a positive polarity charge to a negative polarity charge. The enable band is weakened downward, and the electron blocking layer is enhanced in electron blocking ability, but the hole blocking ability is weakened.
根据权利要求 1所述的氮化镓基发光二极管， 其特征在于： 所述 N型 氮化物层为镓极性氮化物层。  The gallium nitride based light emitting diode according to claim 1, wherein the N-type nitride layer is a gallium-polar nitride layer.
根据权利要求 1所述的氮化镓基发光二极管， 其特征在于： p型氮化物 层与 p型氮化物接触层是氮极性、 镓极性或者氮极性与镓极性的组合  The gallium nitride based light emitting diode according to claim 1, wherein the p-type nitride layer and the p-type nitride contact layer are a combination of a nitrogen polarity, a gallium polarity or a nitrogen polarity and a gallium polarity.
[权利要求 5] 根据权利要求 1所述的氮化镓基发光二极管， 其特征在于： 所述 N型 氮化物层、 发光层采用 MOCVD外延技术形成， 所述电子阻挡层、 P 型氮化物层和 P型氮化物接触层采用分子束外延技术形成。 [Claim 5] The gallium nitride-based light emitting diode according to claim 1, wherein the N-type nitride layer and the light-emitting layer are formed by an MOCVD epitaxial technique, and the electron blocking layer and the P-type nitride layer are formed. The P-type nitride contact layer is formed by molecular beam epitaxy.
[权利要求 6] 氮化镓基发光二极管的制备方法， 依次形成 N型氮化物层、 发光层、 电子阻挡层、 P型氮化物层和 P型氮化物接触层， 其特征在于： 所述 形成的发光层为镓极性， 所述形成的电子阻挡层为氮极性， 所述氮极 性电子阻挡层与镓极性发光层之间的极化反转降低极化造成的能带弯 曲。  [Claim 6] A method of fabricating a gallium nitride based light emitting diode, sequentially forming an N-type nitride layer, a light-emitting layer, an electron blocking layer, a P-type nitride layer, and a P-type nitride contact layer, wherein: the forming The luminescent layer is gallium polarity, the formed electron blocking layer is nitrogen polarity, and polarization inversion between the nitrogen polar electron blocking layer and the gallium polar luminescent layer reduces band bending caused by polarization.
[权利要求 7] 根据权利要求 6所述的氮化镓基发光二极管的制备方法， 其特征在于 [Claim 7] A method of fabricating a gallium nitride based light emitting diode according to claim 6, wherein
： 采用 MOCVD技术生长 N型氮化物层和发光层， 采用分子束外延技 术生长氮极性电子阻挡层。 : The N-type nitride layer and the light-emitting layer were grown by MOCVD technique, and a nitrogen-polar electron blocking layer was grown by molecular beam epitaxy.
[权利要求 8] 根据权利要求 6所述的氮化镓基发光二极管的制备方法， 其特征在于 [Claim 8] The method for fabricating a gallium nitride based light emitting diode according to claim 6, wherein
： 在富氮的条件下， 采用分子束外延技术生长氮极性电子阻挡层， 即 到达衬底表面的 V族源摩尔量大于 III族源的摩尔量。 [权利要求 9] 根据权利要求 6所述的氮化镓基发光二极管的制备方法， 其特征在于: Under nitrogen-rich conditions, a nitrogen-polar electron blocking layer is grown by molecular beam epitaxy, that is, the molar amount of the group V source reaching the surface of the substrate is greater than the molar amount of the group III source. [Claim 9] A method of fabricating a gallium nitride based light emitting diode according to claim 6, wherein
： 采用分子束外延技术生长氮极性电子阻挡层、 p型氮化物层及 p型氮 化物接触层。 : A nitrogen polar electron blocking layer, a p-type nitride layer, and a p-type nitride contact layer are grown by molecular beam epitaxy.
[权利要求 10] 根据权利要求 9所述的氮化镓基发光二极管的制备方法， 其特征在于 ： 在富氮的生长条件， 采用分子束外延技术生长氮极性电子阻挡层、 p型氮化物层及 p型氮化物接触层， 即到达衬底表面的 V族源摩尔量大 于 III族源的摩尔量。  [Claim 10] The method for preparing a gallium nitride-based light-emitting diode according to claim 9, wherein: the nitrogen-polarity electron blocking layer and the p-type nitride are grown by molecular beam epitaxy under nitrogen-rich growth conditions. The layer and the p-type nitride contact layer, that is, the molar amount of the group V source reaching the surface of the substrate is greater than the molar amount of the group III source.
[权利要求 11] 根据权利要求 6所述的氮化镓基发光二极管的制备方法， 其特征在于 [Claim 11] A method of fabricating a gallium nitride based light emitting diode according to claim 6, wherein
： 在富镓的生长条件， 生长 p型氮化物层及 p型氮化物接触层， 即到达 衬底表面的 III族源摩尔量大于 V族源的摩尔量。 : In the gallium-rich growth condition, the p-type nitride layer and the p-type nitride contact layer are grown, that is, the molar amount of the group III source reaching the surface of the substrate is larger than the molar amount of the group V source.
[权利要求 12] 根据权利要求 6所述的氮化镓基氮的制备方法， 其特征在于： 采用分 子束外延技术生长氮极性电子阻挡层的温度为 700~1000°C。 [Claim 12] The method for producing a gallium nitride-based nitrogen according to claim 6, wherein the temperature of the nitrogen-polarity electron blocking layer grown by the molecular beam epitaxy is 700 to 1000 °C.
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