CN106784206B - Gallium nitride based light emitting diode - Google Patents
Gallium nitride based light emitting diode Download PDFInfo
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- CN106784206B CN106784206B CN201710050629.0A CN201710050629A CN106784206B CN 106784206 B CN106784206 B CN 106784206B CN 201710050629 A CN201710050629 A CN 201710050629A CN 106784206 B CN106784206 B CN 106784206B
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- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 40
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 29
- 230000004888 barrier function Effects 0.000 claims abstract description 36
- 230000007547 defect Effects 0.000 claims abstract description 29
- 238000002347 injection Methods 0.000 claims abstract description 17
- 239000007924 injection Substances 0.000 claims abstract description 17
- 150000004767 nitrides Chemical class 0.000 claims abstract description 12
- 239000000463 material Substances 0.000 claims abstract description 7
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 64
- 229910002704 AlGaN Inorganic materials 0.000 description 12
- 238000010586 diagram Methods 0.000 description 10
- 230000000694 effects Effects 0.000 description 10
- 230000005855 radiation Effects 0.000 description 8
- 230000008901 benefit Effects 0.000 description 6
- 230000006798 recombination Effects 0.000 description 6
- 238000005215 recombination Methods 0.000 description 6
- 230000000903 blocking effect Effects 0.000 description 5
- 241001634884 Cochlicopa lubricella Species 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 3
- 229910017083 AlN Inorganic materials 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 230000005641 tunneling Effects 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005034 decoration Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 230000003760 hair shine Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
- H01L33/145—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
Abstract
The invention discloses a kind of gallium nitride based light emitting diodes, it successively include: N-shaped nitride layer, active layer, electronic barrier layer, energy band contorted strata and p-type nitride layer, it is characterized by: the plane area in the active layer surface with V-type defect and the connection V-type defect, the material of the energy band contorted strata has sufficiently low energy gap, the energy band of the electronic barrier layer is caused to distort, electronic barrier layer is reduced to the effective barrier height in hole, reinforce efficiency of the hole from C-plane injection, improves the luminous efficiency of LED.
Description
Technical field
The invention belongs to field of semiconductor illumination, and in particular to a kind of gallium nitride based light emitting diode.
Background technique
Gallium nitride based light emitting diode (Light Emitting Diodem, abbreviation LED) shines since it is efficient and imitates
Rate has been widely applied to each light source field such as backlight, illumination, car light, decoration at present.Further increase shining for LED
Efficiency is still the emphasis of current industry development, and luminous efficiency is mainly determined by two factors, the first is that electron hole is having
The radiation recombination efficiency of source region, i.e. internal quantum efficiency；It is for second the extraction efficiency of light.About the technology for improving both efficiency
There is extensive report.In terms of improving internal quantum efficiency, such as Quantum Well energy band design improves crystal quality, improves p-type nitrogen
The hole injection efficiency etc. of compound layer.
Hole injection is always the bottleneck factor of gallium nitride based LED, on the one hand since p-type doping element M g is in GaN
Activation energy is higher, causes its activation efficiency low；On the other hand since the effective mass in hole is bigger than normal, cause its mobility relatively low.
LED structure utilizes the V-type defect of quantum well region in recent years, substantially increases the injection efficiency in hole.But in non-V-type defect area
Also there is certain hole injection in domain (C-plane), and the injection efficiency in this region hole is poor, therefore how to improve C-
The hole injection of plane also becomes the project of discussion.
Furthermore the luminous efficiency for influencing gallium nitride based LED is electronics overflow situation, this is also extensive in having reported document
It discusses and proposes solution.
Summary of the invention
The present invention provides a kind of gallium nitride based light emitting diodes, and the energy band of a thin pillar is added after electronic barrier layer
Contorted strata reduces electronic barrier layer to the effective barrier height in hole, reinforces efficiency of the hole from C-plane injection, improve LED
Luminous efficiency.
Light emitting diode successively includes: N-shaped nitride layer, active layer, electronic barrier layer, energy band contorted strata and p-type nitridation
Nitride layer with V-type defect and connects the plane area of the V-type defect in the active layer surface, and the energy band contorted strata is tool
There is the N-shaped nitride layer of sufficiently low energy gap, the energy band of the electronic barrier layer is caused to distort.
Preferably, energy gap Eg < 3eV of the energy band contorted strata.
Preferably, the electronic barrier layer and energy band contorted strata are formed in plane area and prolong to V-type defect sidewall region
It stretches, promotes hole from plane area and V-type fault location injection active layer when Injection Current.
Preferably, the energy band contorted strata is Alx1In(1-x1)N layers, wherein 0 < x1≤0. 4.
Preferably, the energy band contorted strata is Inx2Ga(1-x2)N layers, wherein 0.07 < x2.
Preferably, the energy band contorted strata with a thickness of 0.5 ~ 5nm.
Preferably, the spacing of the electronic barrier layer and the energy band contorted strata is 0≤d≤5nm.
Preferably, the energy band contorted strata has n-type doping, and doping concentration is 5 × 1017~ 5×1018 cm-3。
Preferably, the material of the electronic barrier layer is Alx3In(1-x3)N, wherein 0.8 < x3≤1.
Preferably, the electronic barrier layer Alx3In(1-x3)N is less than 1nm in the thickness of the side-walls formation of V-type defect.
The present invention at least have it is following the utility model has the advantages that
(1) the energy band contorted strata of thin pillar is inserted between electronic barrier layer and p-type nitride layer, operation is forward inclined
Pressure, the energy band contorted strata of the thin pillar causes the energy band of electronic barrier layer to distort, for electronics, electronic barrier layer conduction band
Electronic blocking effect become more preferably, to avoid electronics overflow to p type island region, for hole, electronic barrier layer valence band it is equivalent
Energy gap decline improves the benefits of active area is injected in hole rate by tunneling effect.
(2) Al is usedx3In(1-x3)N operates the Al under forward bias voltage drop as electronic barrier layerxIn(1-x)The energy gap of N compared with
Width, it is preferable in the effect of conduction band electron blocking, it avoids electronics overflow to p type island region, improves radiation recombination efficiency；Operation is forward inclined
Pressure, Alx3In(1-x3)The V-type defect side wall of N is lower to C face thickness ratio, i.e. this Alx3In(1-x3)N is in identical C face thickness
With relatively thin V-type defect sidewall thickness, the advantage brought is to improve hole by the ability of V-type fault location injection MQW, whereby
Improve radiation recombination efficiency.
Other features and advantages of the present invention will be illustrated in the following description, also, partly becomes from specification
It obtains it is clear that understand through the implementation of the invention.The objectives and other advantages of the invention can be by specification, right
Specifically noted structure is achieved and obtained in claim and attached drawing.
Detailed description of the invention
Attached drawing is used to provide further understanding of the present invention, and constitutes part of specification, with reality of the invention
It applies example to be used to explain the present invention together, not be construed as limiting the invention.In addition, attached drawing data be description summary, be not by
Ratio is drawn.
Fig. 1 is a kind of existing structure sectional view of light emitting diode.
Fig. 2 is the face the C energy band schematic diagram of light emitting diode shown in Fig. 1.
Fig. 3 is the side energy band schematic diagram of the V-type defect of light emitting diode shown in Fig. 1.
Fig. 4 is a kind of structure sectional view of light emitting diode of real first preferred embodiment of the present invention.
Fig. 5 is the C-plane energy band schematic diagram of light emitting diode shown in Fig. 4.
Fig. 6 is the side energy band schematic diagram of the V-type defect of light emitting diode shown in Fig. 4.
Fig. 7 is a kind of structure sectional view of light emitting diode of real second preferred embodiment of the present invention.
Fig. 8 is the face the C energy band schematic diagram of light emitting diode shown in Fig. 7.
Fig. 9 is the side energy band schematic diagram of the V-type defect of light emitting diode shown in Fig. 7.
Figure label is expressed as follows:
100: growth substrates；
110: buffer layer；
120:n type nitride layer；
130:InGaN/GaN superlattice structure
140: active layer；
150: electronic barrier layer；
160:p type nitride layer；
170: energy gap contorted strata.
Specific embodiment
Light emitting diode and preparation method thereof of the invention is described in detail below with reference to schematic diagram, whereby to this
How applied technology method can be fully understood and real accordingly come the realization process for solving technical problem, and reaching technical effect for invention
It applies.As long as each feature in each embodiment and each embodiment in the present invention can it should be noted that not constituting conflict
To be combined with each other, it is within the scope of the present invention to be formed by technical solution.
Fig. 1 shows a kind of gallium nitride based light emitting diode of traditional structure, successively includes: growth substrates 100, buffer layer
110, n-type gallium nitride layer 120, InGaN/GaN superlattice structure 130,140 layers of multiple quantum well active layer, the resistance of p-type AlGaN electronics
Barrier 150 and p-type gallium nitride layer 160, wherein multiple quantum well active layer 140 has one to arrange serial V-type defect and connect the V-type and lacks
Sunken plane area (C-plane).Fig. 2 and Fig. 3 respectively illustrates the face C (C-plane) the energy band signal of light emitting diode shown in Fig. 1
Figure and V-type defect side wall (V-pit sidewall) energy band schematic diagram, in this configuration, hole mainly passes through V-type defect and injects
Active layer, and under the hole injection efficiency in the face C is very low.
Fig. 4 shows a kind of gallium nitride based light emitting diode of first preferred embodiment of the invention, includes: from bottom to top
Growth substrates 100, buffer layer 110, n-type gallium nitride layer 120, InGaN/GaN superlattice structure 130, multiple quantum well active layer 140
Layer, p-type AlGaN electronic barrier layer 150, energy band contorted strata 170 and p-type gallium nitride layer 160, wherein multiple quantum well active layer 140
Serial V-type defect is arranged with one and connects the plane area (C-plane) of the V-type defect, p-type AlGaN electronic barrier layer 150 and energy
Band contorted strata 170 is formed in plane area and extends to V-type defect sidewall region.
Specifically, it includes but is not limited to sapphire, aluminium nitride, gallium nitride, silicon, silicon carbide, table that growth substrates 100, which are chosen,
Face structure can be planar structure or patterning graph structure；Buffer layer 110 can be single layer structure or multilayered structure, and material can be selected
AlN or GaN or combinations thereof, thickness can be 20 ~ 50nm, preferably may include the low temperature GaN nucleating layer of 25-40nm thickness, 0 .2 ~
1 μm of high temperature GaN buffer layer, 1 ~ 2 μ m-thick three-dimensional undoped gallium nitride layer and 1-2 μ m-thick two-dimentional gallium nitride layer；N-shaped nitridation
1.5 ~ 4 μm of the thickness of gallium layer 120, n-type doping concentration are 1 × 1017~1×1019cm-3；InGaN/GaN superlattice structure 130 is
The stress-buffer layer of multiple quantum well active layer 150 has 15-30 period, in each period InGaN with a thickness of 1 ~ 3nm,
GaN is with a thickness of 2 ~ 10nm；Active layer 140 has the InGaN/GaN multiple quantum wells in 5-15 period, InGaN in each period
With a thickness of 2 ~ 4nm, GaN is with a thickness of 5 ~ 15nm；P-type AlGaN electronic barrier layer 150 with a thickness of 10 ~ 50nm, Al's therein
The molar constituent content that molar constituent content is 10% ~ 30%, Mg is the .3% of 0 .05% ~ 0；The thickness range of energy band contorted strata 170
0.5 ~ 5nm, n-type doping concentration range are 5 × 1017~ 5×1018 cm-3, which need to have sufficiently low enough
Low energy gap, so that the energy band of p-type AlGaN electronic barrier layer 150 distorts, preferable energy gap Eg is 3eV hereinafter, material can be selected
Alx1In(1-x1)N or Inx2Ga(1-x2)N, when using Alx1In(1-x1)When N, In component is preferably 60% or more, i.e. 0 < x1≤0.4, when
Using Inx2Ga(1-x2)N, In component are preferably 7% or more, while to obtain the InGaN of better quality, i.e. 0.07 < x2；P-type
Gallium nitride layer 160 with a thickness of 30-60nm, doping depth is that doping concentration is 1 × 1017~5×1018cm-3。
Region can also contain other semiconductor materials between p-type AlGaN electronic barrier layer 150 and energy band contorted strata 170
Layer, the spacing for defining electronic barrier layer 150 and energy band contorted strata 170 is d, wherein be that effect is best with d=0, i.e. electronic barrier layer
To grow up and has then grown energy band contorted strata at once, its remoter effect of the two distance is poorer, and it is ineffective as d > 5nm, therefore two
Spacing d value range between person is 0 ~ 5nm.
Figures 5 and 6 respectively illustrate the C-plane energy band diagram and V-type defect side wall energy band diagram of light emitting diode shown in Fig. 4.
It is seen that operating under forward bias voltage drop, because being embedded in low band gaps material layer after p-type AlGaN electronic barrier layer 150
(Eg < 3EV) causes the energy band of AlGaN to distort, and for electronics, the electronic blocking effect of AlGaN conduction band becomes more preferably, to keep away
Exempt from electronics overflow to p type island region, for hole, the equivalent energy gap of AlGaN valence band declines, and improves hole by tunneling effect
The efficiency of MQW is injected, LED radiation combined efficiency is also therefore improved.
In the gallium nitride based light emitting diode of the present embodiment, it is embedded in such as by after electronic barrier layer AlGaN
Alx1In(1-x1)N、Inx2Ga(1-x2)The efficiency of hole injection MQW can be improved in the N-shapeds thin pillar nitride layer such as N, and in addition electronics hinders
The effect of gear is also preferable, reduces electronics overflow, LED radiation combined efficiency is improved, with luminous optical diode structure shown in FIG. 1
It compares, 3-5% can be promoted using the LED chip brightness of structure described in the present embodiment.
Fig. 7 shows a kind of gallium nitride based light emitting diode of second preferred embodiment of the invention.The present embodiment and Fig. 4
Shown in the difference of light emitting diode be: electronic barrier layer 150 uses Alx3In(1-x3)N replaces original AlGaN, wherein 0.8
< x3≤1 is 1nm or less in the thickness Ws2 of the side-walls formation of V-type defect in 1 ~ 20nm of range of the thickness Wc2 in the face C.
Fig. 8 and 9 respectively illustrates the face the C energy band and V-type defect side energy band of light emitting diode shown in Fig. 7.With Fig. 2 pairs
Than operating the Al under forward bias voltage dropx3In(1-x3)N energy gap is wider, therefore preferable in the effect of conduction band electron blocking, avoids electronics
Overflow improves radiation recombination efficiency to p type island region；It is compared with Fig. 3, operates the Al under forward bias voltage dropx3In(1-x3)The V-type defect side of N
Wall is to C face thickness ratio lower (Ws2/Wc2 < Ws1/Wc1), i.e. this structure Alx3In(1-x3)N has in identical C face thickness
Relatively thin V-type defect sidewall thickness, the advantage brought are to improve hole by the ability of V-type fault location injection MQW, are improved whereby
Radiation recombination efficiency.
In the light emitting diode of the present embodiment, because the potential barrier of V-type fault location is low, Alx3In(1-x3)N is in V-type defect side wall
It is relatively thin, can further improve hole injection effect, and injected holes can the lateral transfer in Quantum Well, eliminate at the face C empty
The low influence of cave injection efficiency；In addition in the face C region because of Alx3In(1-x3)N energy gap is wider, and the effect of electronic blocking is preferable, drop
Low electronics overflow, further improves radiation recombination efficiency.
Although exemplary embodiment of the present invention has been described, it is understood that, the present invention should not necessarily be limited by these examples
Property embodiment but those skilled in the art being capable of the spirit and scope of the present invention required by claim as follows
Interior carry out variations and modifications.
Claims (9)
1. gallium nitride based light emitting diode successively includes: N-shaped nitride layer, active layer, electronic barrier layer, energy band contorted strata and p
Type nitride layer, it is characterised in that: the plane area in the active layer surface with V-type defect and the connection V-type defect, institute
Stating energy band contorted strata is the N-shaped nitride layer with sufficiently low energy gap, and the energy band of the electronic barrier layer is caused to distort, described
Electronic barrier layer and energy band contorted strata are formed in plane area and extend to V-type defect sidewall region, promote when Injection Current
Active layer is injected from plane area and V-type fault location in hole.
2. gallium nitride based light emitting diode according to claim 1, it is characterised in that: the energy gap Eg of the energy band contorted strata
<3eV。
3. gallium nitride based light emitting diode according to claim 1, it is characterised in that: the energy band contorted strata is
Alx1In(1-x1)N layers, wherein 0 < x1≤0. 4.
4. gallium nitride based light emitting diode according to claim 1, it is characterised in that: the energy band contorted strata is
Inx2Ga(1-x2)N layers, wherein 0.07 < x2.
5. gallium nitride based light emitting diode according to claim 1, it is characterised in that: the energy band contorted strata with a thickness of
0.5~5nm。
6. gallium nitride based light emitting diode according to claim 1, it is characterised in that: the energy band contorted strata has N-shaped
Doping, doping concentration are 5 × 1017~ 5×1018 cm-3。
7. gallium nitride based light emitting diode according to claim 1, it is characterised in that: the electronic barrier layer and the energy
Spacing with contorted strata is 0≤d≤5nm.
8. gallium nitride based light emitting diode according to claim 1, it is characterised in that: the material of the electronic barrier layer is
Alx3In(1-x3)N, wherein 0.8 < x3≤1.
9. gallium nitride based light emitting diode according to claim 8, it is characterised in that: the electronic barrier layer
Alx3In(1-x3)N is less than 1nm in the thickness of the side-walls formation of V-type defect.
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| CN110047978B (en) * | 2019-04-30 | 2020-10-02 | 芜湖德豪润达光电科技有限公司 | Light emitting diode and forming method thereof |
| CN114300590B (en) * | 2021-12-28 | 2024-02-23 | 淮安澳洋顺昌光电技术有限公司 | Light-emitting diode and preparation method thereof |
| CN116154069A (en) * | 2023-04-24 | 2023-05-23 | 江西兆驰半导体有限公司 | Epitaxial wafer for Micro-LED, preparation method of epitaxial wafer and Micro-LED |
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