CN105826440A - Gallium nitride-based light emitting diode and preparation method thereof - Google Patents
Gallium nitride-based light emitting diode and preparation method thereof Download PDFInfo
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- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 33
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 30
- 238000002360 preparation method Methods 0.000 title claims abstract description 17
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 100
- 150000004767 nitrides Chemical class 0.000 claims abstract description 68
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 51
- 230000004888 barrier function Effects 0.000 claims abstract description 50
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims abstract description 48
- 229910052733 gallium Inorganic materials 0.000 claims abstract description 48
- 238000000034 method Methods 0.000 claims abstract description 20
- 238000001451 molecular beam epitaxy Methods 0.000 claims abstract description 18
- 230000010287 polarization Effects 0.000 claims abstract description 17
- 238000005516 engineering process Methods 0.000 claims abstract description 13
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims abstract description 10
- 230000000903 blocking effect Effects 0.000 claims abstract description 7
- 230000012010 growth Effects 0.000 claims description 34
- 239000000758 substrate Substances 0.000 claims description 17
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims description 2
- 230000015572 biosynthetic process Effects 0.000 claims 2
- 238000000407 epitaxy Methods 0.000 claims 1
- 230000000694 effects Effects 0.000 abstract description 6
- 238000006243 chemical reaction Methods 0.000 abstract 2
- 238000002347 injection Methods 0.000 abstract 2
- 239000007924 injection Substances 0.000 abstract 2
- 238000005452 bending Methods 0.000 abstract 1
- 150000001875 compounds Chemical class 0.000 description 5
- 230000005284 excitation Effects 0.000 description 5
- 230000000802 nitrating effect Effects 0.000 description 5
- 229910002704 AlGaN Inorganic materials 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000005036 potential barrier Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000003749 cleanliness Effects 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000001737 promoting effect Effects 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- 229910017083 AlN Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- 230000010261 cell growth Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
- H01L33/145—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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Abstract
The invention provides a gallium nitride-based light emitting diode with high luminous efficiency and a preparation method thereof, and belongs to the field of photoelectric device preparation. The LED can maintain higher photoelectric conversion efficiency and a lower Droop effect under bulk current injection. The LED comprises a bottom layer and a light emitting layer which are grown through an MOCVD technology and a P-type layer which is grown through a molecular beam epitaxy technology, namely, a gallium polar buffer layer, a non-doped nitride layer, an N-type nitride layer and a multiple-quantum-well light emitting layer are grown through the MOCVD technology, and then, a sample is transferred to the reaction chamber of molecular beam epitaxy equipment, and a nitrogen polar electron blocking layer, a P-type nitride layer and a P-type nitride contact layer are grown. Through the method, band bending caused by polarization between the electron blocking layer and the multiple-quantum-well light emitting layer is reduced, the barrier height of electron overshoot to the P-type layer is increased, and the barrier height of hole injection to the multiple-quantum-well region is reduced.
Description
Technical field
The present invention relates to semiconductor photoelectric device preparation field, particularly relate to the technology of preparing of a kind of specular removal gallium nitride based LED.
Background technology
The fast development of broad stopband III-V group semi-conductor material makes high brightness LED achieve the green glow commercialization near ultraviolet product.But the nitride that current business-like LED major part uses MOCVD technology to grow 001 on sapphire, carborundum or silicon substrate is prepared from, and surface is all gallium polar surface.
Fig. 1 shows routine business gallium-polar gallium nitride based LED construction figure, wherein due to the difference of lattice paprmeter between multiple quantum well light emitting layer 104 and electronic barrier layer 105, there is stronger polarization field.Fig. 2 shows routine business gallium-polar gallium nitride base LED band structure figure, electronic barrier layer 104 is owing to being produced positive charge by tensile strain in interface, cause being bent downwardly by band, electronic barrier layer is made to reduce at the effective barrier height of conduction band, effective potential barrier in valence band raises, not only reduce the electronic barrier layer blocking capability to electronics, and the potential barrier making hole, p-type side be injected into multiple quantum well light emitting layer raises.
Summary of the invention
It is an object of the invention to: providing a kind of specular removal gallium nitride based LED and preparation method thereof, it can weaken band curvature effect, while promoting electron-blocking capability, weakens the stop to hole, boost device photoelectric transformation efficiency.
The technical scheme is that gallium nitride based light emitting diode, including: a N-type nitride layer, a gallium polar light emitting layer, a nitrogen polarity electronic barrier layer, a p-type nitride layer, a p-type nitride contact layer, polarization reversal between described nitrogen polarity electronic barrier layer and gallium polar light emitting layer is designed to reduce the band curvature that polarization causes, electronics can not only be increased and cross the barrier height being flushed to p-type nitride layer, and hole can be reduced and be injected into the potential barrier of multiquantum well region.
Preferably, described low temperature buffer layer at most quantum well radiation layer segment all uses MOCVD technology growth, and then substrate is transferred to molecular beam epitaxy reative cell growth nitrogen polarity electronic barrier layer, p-type nitride layer and p-type nitride contact layer.
In the above-mentioned methods, it is the condition of rich nitrogen during molecular beam epitaxy technique growth nitrogen polarity electronic barrier layer, i.e. arrives the III source mole mole less than group V source of substrate surface.
Further, the temperature of molecular beam epitaxy technique growth nitrogen polarity electronic barrier layer is 700 ~ 1000 DEG C, it is preferable that for ~ 850 DEG C.
Further, nitrogen polarity electronic barrier layer can be body material, it is also possible to be superlattice structure, and component or doping can be invariable, it is also possible to be gradual change.
Further, p-type nitride layer and p-type nitride contact layer can be nitrogen polarity, it is also possible to be gallium polarity, it is also possible to be a combination of both.
Further, molecular beam epitaxy technique growth nitrogen polarity electronic barrier layer is used, it is achieved be relatively easy to, it is not necessary to carry out the Mg modulation technique in MOCVD technology, more precipitous with the interface of multiple quantum well light emitting layer, and there is wider growth window.
Further, being high vacuum condition when employing molecular beam epitaxy technique growth nitrogen polarity electronic barrier layer, p-type nitride layer and p-type nitride contact layer, reative cell cleanliness factor is higher, and is simple substance source, not having the introducing of the elements such as H, the activation efficiency of Mg element is higher.
Further, p-type nitride layer and p-type nitride contact layer can also use the growth conditions of rich gallium, i.e. arrive the III source mole mole more than group V source of substrate surface.
Further, nitrogen polarity electronic barrier layer changes due to polarity, cause with multiple quantum well light emitting bed boundary at polarization charge become negative polarization electric charge from positive polarisation charge, can be bent downwardly and weaken by band, make electronic barrier layer that electron-blocking capability to be strengthened, but hole blocking ability is weakened.
Further, said method can improve droop effect from stopping that the light efficiency of boost device in terms of two is injected in electronics and lifting hole.
The present invention uses the electronic barrier layer of nitrogen polar surface, make with multiple quantum well light emitting bed boundary at polarization charge become negative charge from positive charge, reduce band curvature effect, promoting while electron-blocking capability, weaken the stop to hole, boost device photoelectric transformation efficiency.It addition, the cleanliness factor of molecular beam epitaxy technique reative cell is higher, each bed boundary steeper, beneficially device performance is made to promote.
Accompanying drawing explanation
Fig. 1 is routine business gallium-polar gallium nitride based LED construction figure.
Fig. 2 is routine business gallium-polar gallium nitride base LED band structure figure.
Fig. 3 is a kind of specular removal gallium nitride based LED side view using the present invention to prepare.
Fig. 4 is a kind of specular removal gallium nitride based LED band structure figure prepared by the present invention.
Fig. 5 is another LED junction composition disclosed by the invention.
In figure, each label is expressed as follows:
100 substrates；
101 gallium polarity low temperature buffer layers；
102 gallium polarity non-nitrating compound layer；
103 gallium polarity N-type nitride layers；
104 gallium polarity multiple quantum well light emitting layers；
105 gallium polarity electronic barrier layers；
106 gallium polarity p-type nitride layers；
107 gallium polarity p-type nitride contact layer
205 nitrogen polarity electronic barrier layers；
206 nitrogen polarity p-type nitride layers；
207 nitrogen polarity p-type nitride contact layer.
Detailed description of the invention
By making the present invention a kind of specular removal gallium nitride based LED and preparation method thereof be more readily understood its substantive distinguishing features and the practicality being had thereof, the most just combine accompanying drawing specific embodiment some to the present invention and be described in further detail.But scope is not constituted any limitation by description and explanation below in relation to embodiment.
Embodiment 1.
The present invention provides a kind of specular removal gallium nitride based LED and preparation method thereof, and preparation technology mainly comprises the steps of
Accompanying drawing 3 illustrates a kind of specular removal gallium nitride based LED using the present invention to prepare, and sequentially consists of: substrate 100, gallium polarity low temperature buffer layer 101, gallium polarity non-nitrating compound layer 102, gallium polarity N-type nitride layer 103, gallium polarity multiple quantum well light emitting layer 104, nitrogen polarity electronic barrier layer 205, nitrogen polarity p-type nitride layer 206, nitrogen polarity p-type nitride contact layer 207.
Fig. 4 shows above-mentioned specular removal gallium nitride based LED band structure figure.Contrast with the routine business gallium-polar gallium nitride base LED band structure figure shown in Fig. 2, in said structure, nitrogen polarity electronic barrier layer 205 changes due to polarity, cause being become negative polarization electric charge with multiple quantum well light emitting layer 104 interface polarization charge from positive polarisation charge, energy band is bent downwardly and weakens, make electronic barrier layer that electron-blocking capability to be strengthened, but hole blocking ability is weakened.Above-mentioned LED structure can improve droop effect from stopping that the light efficiency of boost device in terms of two is injected in electronics and lifting hole.
Below in conjunction with preparation method, above-mentioned gallium nitride based LED is described in detail.
After using conventional MOCVD technique to grow gallium polarity low temperature buffer layer 101, gallium polarity non-nitrating compound layer 102, gallium polarity N-type nitride layer 103, gallium polarity multiple quantum well light emitting layer 104 on substrate 100, it is transferred to substrate in molecular beam epitaxy reative cell grow nitrogen polarity electronic barrier layer 205, nitrogen polarity p-type nitride layer 206 and nitrogen polarity p-type nitride contact layer 207.Wherein substrate 100 can be selected for sapphire, carborundum or silicon substrate；Gallium polarity low temperature buffer layer 101 can be that gallium nitride, aluminium nitride or aluminum gallium nitride combine, and thickness is between 5 ~ 100nm；The thickness of gallium polarity non-nitrating compound layer 102 between 300 ~ 7000nm, preferably 3500nm；(thickness of gallium polarity N-type nitride layer 103 is more than 1 μm；Gallium polarity multiple quantum well light emitting layer 104 using InGaN as well layer, constituted using GaN or AlGaN or the two combination as barrier layer, wherein barrier layer thickness between 3 ~ 150nm, well layer thickness is between 1 ~ 20nm.
(1) growth nitrogen polarity electronic barrier layer 205
In the present embodiment, the condition at rich nitrogen uses molecular beam epitaxy technique growth nitrogen polarity electronic barrier layer 205, i.e. arrives the III source mole mole less than group V source of substrate surface.Particularly as follows: be warming up to ~ 850 DEG C under the conditions of N source is opened, concrete growth conditions is: using N source excitation power is 500W, N2Flow is 1.5sccm, and equivalence line is ~ 1.0E-7Torr, and corresponding chamber pressure is 1 ~ 2E-5Torr；The equivalent line using Ga source is 5 ~ 7E-8Torr, it is therefore preferable to the equivalent line of ~ 7E-8Torr, Al is 3 ~ 5E-8Torr, V/III than for ~ 0.7, for rich nitrogen condition, it is ensured that arrive the III source mole mole less than group V source of substrate surface.The electronic barrier layer 205Al component that growth obtains is 10 ~ 30%, it is therefore preferable to ~ 20%, and thickness is 500 ~ 1500A.
Above-mentioned nitrogen polarity electronic barrier layer 205 can be the body material of AlGaN layer, it is also possible to be the superlattice structure of AlGaN/GaN, and Al component can be constant, it is also possible to gradual change, it is also possible to carries out the doping in Mg source.
(2) growth nitrogen polarity p-type nitride layer 206
The growth conditions of nitrogen polarity p-type nitride layer is: growth temperature is 750 ~ 1050 DEG C, it is therefore preferable to ~ 870 DEG C, and using N source excitation power is 500W, N2Flow is 1.5sccm, and equivalence line is ~ 1.0E-7Torr, and corresponding chamber pressure is 1 ~ 2E-5Torr.The equivalent line in the Ga source used is 6 ~ 9E-8Torr, it is therefore preferable to the equivalent line of ~ 8.5E-8Torr, Mg is that 0.5 ~ 1E-9Torr, V/III compare for ~ 0.85, and thickness is 400 ~ 1500A, and doping content is 0.7 ~ 1E19/cm3。
(3) growth nitrogen polarity p-type nitride contact layer 207
The growth conditions of nitrogen polarity p-type nitride contact layer is: growth temperature is 700 ~ 950 DEG C, it is therefore preferable to ~ 700 DEG C, and using N source excitation power is 500W, N2Flow is 1.5sccm, and equivalence line is ~ 1.0E-7Torr, and corresponding chamber pressure is 1 ~ 2E-5Torr.The equivalent line in the Ga source used is 6 ~ 9E-8Torr, it is therefore preferable to the equivalent line of ~ 8.5E-8Torr, Mg is that 3 ~ 8E-9Torr, V/III compare for ~ 0.85, and thickness is 10 ~ 100A, and doping content is 0.7 ~ 1E20/cm3。
Nitrogen polarity electronic barrier layer prepared by employing said method changes due to polarity, cause with multiple quantum well light emitting bed boundary at polarization charge become negative polarization electric charge from positive polarisation charge, energy band is bent downwardly and weakens, make electronic barrier layer that electron-blocking capability to be strengthened, but hole blocking ability is weakened, improves the Droop effect of device.Simultaneously, molecular beam epitaxy technique growth p-type layer is used to make the interface between multiquantum well region and p-type layer more precipitous, and growth temperature low compared with MOCVD technology ~ about 100 DEG C, temperature damage for multiquantum well region is lighter, it is prevented from the indium volatilization of multiquantum well region, promotes the internal quantum efficiency of multiquantum well region.
Embodiment 2
The present embodiment is different from embodiment 1 and is: p-type nitride layer and p-type nitride contact layer are gallium polarity.Using the p-type nitride layer of gallium polarity, p-type nitride contact layer that device surface can be made the most smooth after nitrogen polarity electronic barrier layer, follow-up chip technology electrode is prepared, such as Fig. 5.
In the present embodiment, after the most first using conventional MOCVD technique to grow gallium polarity low temperature buffer layer 101, gallium polarity non-nitrating compound layer 102, gallium polarity N-type nitride layer 103, gallium polarity multiple quantum well light emitting layer 104 on substrate 100, it is transferred to substrate in molecular beam epitaxy reative cell grow nitrogen polarity electronic barrier layer 205, gallium polarity p-type nitride layer 306 and gallium polarity p-type nitride contact layer 307.Wherein nitrogen polarity electronic barrier layer 205 grows under the conditions of rich nitrogen, and its actual conditions can refer to embodiment 1, gallium polarity p-type nitride layer 306 and gallium polarity p-type nitride contact layer 307 and grows under the conditions of rich gallium, specific as follows.
(1) growth gallium polarity p-type nitride layer 306
The growth conditions of gallium polarity p-type nitride layer is: growth temperature is 750 ~ 1050 DEG C, it is therefore preferable to ~ 870 DEG C, use N source excitation power be 500W, N2 flow be 1.5sccm, equivalence line be ~ 1.0E-7Torr, correspondence chamber pressure be 1 ~ 2E-5Torr.The equivalent line in the Ga source used is 9 ~ 15E-8Torr, it is therefore preferable to the equivalent line of ~ 1.3E-7Torr, Mg is that 0.5 ~ 1.2E-9Torr, V/III compare for ~ 1.3, and thickness is 400 ~ 1500A, and doping content is 0.7 ~ 1E19/cm3。
(2) growth gallium polarity p-type nitride contact layer 307
The growth conditions of gallium polarity p-type nitride contact layer is: growth temperature is 700 ~ 950 DEG C, it is therefore preferable to ~ 700 DEG C, use N source excitation power be 500W, N2 flow be 1.5sccm, equivalence line be ~ 1.0E-7Torr, correspondence chamber pressure be 1 ~ 2E-5Torr.The equivalent line in the Ga source used is 9 ~ 15E-8Torr, it is therefore preferable to the equivalent line of ~ 1.3E-7Torr, Mg is that 5 ~ 9E-9Torr, V/III compare for ~ 1.3, and thickness is 10 ~ 100A, and doping content is 0.7 ~ 1E20/cm3。
The above is only the preferred embodiment of the present invention; it should be pointed out that, for those skilled in the art, under the premise without departing from the principles of the invention; can also make some improvements and modifications, these improvements and modifications also should be regarded as protection scope of the present invention.
Claims (12)
1. gallium nitride based light emitting diode, include successively: N-type nitride layer, luminescent layer, electronic barrier layer, p-type nitride layer and p-type nitride contact layer, it is characterized in that: luminescent layer is gallium polarity nitride layer, electronic barrier layer is nitrogen polarity nitride layer, and the polarization reversal between described nitrogen polarity electronic barrier layer and gallium polar light emitting layer reduces the band curvature that polarization causes.
Gallium nitride based light emitting diode the most according to claim 1, it is characterized in that: described P-type electron barrier layer changes due to polarity, cause being become negative polarization electric charge with luminescent layer interface polarization charge from positive polarisation charge, enable band is bent downwardly and weakens, make electronic barrier layer that electron-blocking capability to be strengthened, but hole blocking ability is weakened.
Gallium nitride based light emitting diode the most according to claim 1, it is characterised in that: described N-type nitride layer is gallium polarity nitride layer.
Gallium nitride based light emitting diode the most according to claim 1, it is characterised in that: p-type nitride layer and p-type nitride contact layer are the combinations of nitrogen polarity, gallium polarity or nitrogen polarity and gallium polarity.
Gallium nitride based light emitting diode the most according to claim 1, it is characterized in that: described N-type nitride layer, luminescent layer use MOCVD epitaxy technology to be formed, described electronic barrier layer, p-type nitride layer and p-type nitride contact layer use molecular beam epitaxy technique to be formed.
6. the preparation method of gallium nitride based light emitting diode, sequentially form N-type nitride layer, luminescent layer, electronic barrier layer, p-type nitride layer and p-type nitride contact layer, it is characterized in that: the luminescent layer of described formation is gallium polarity, the electronic barrier layer of described formation is nitrogen polarity, and the polarization reversal between described nitrogen polarity electronic barrier layer and gallium polar light emitting layer reduces the band curvature that polarization causes.
The preparation method of gallium nitride based light emitting diode the most according to claim 6, it is characterised in that: use MOCVD technology growth N-type nitride layer and luminescent layer, use molecular beam epitaxy technique growth nitrogen polarity electronic barrier layer.
The preparation method of gallium nitride based light emitting diode the most according to claim 6, it is characterized in that: under conditions of rich nitrogen, use molecular beam epitaxy technique growth nitrogen polarity electronic barrier layer, i.e. arrive the group V source mole mole more than III source of substrate surface.
The preparation method of gallium nitride based light emitting diode the most according to claim 6, it is characterised in that: use molecular beam epitaxy technique growth nitrogen polarity electronic barrier layer, p-type nitride layer and p-type nitride contact layer.
The preparation method of gallium nitride based light emitting diode the most according to claim 9, it is characterized in that: at the growth conditions of rich nitrogen, use molecular beam epitaxy technique growth nitrogen polarity electronic barrier layer, p-type nitride layer and p-type nitride contact layer, i.e. arrive the group V source mole mole more than III source of substrate surface.
The preparation method of 11. gallium nitride based light emitting diodes according to claim 6, it is characterised in that: at the growth conditions of rich gallium, growth p-type nitride layer and p-type nitride contact layer, i.e. arrive the III source mole mole more than group V source of substrate surface.
The preparation method of 12. nitridation gallio nitrogen according to claim 6, it is characterised in that: the temperature using molecular beam epitaxy technique growth nitrogen polarity electronic barrier layer is 700 ~ 1000 DEG C.
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| CN106784206A (en) * | 2017-01-23 | 2017-05-31 | 厦门三安光电有限公司 | Gallium nitride based light emitting diode |
| WO2017202328A1 (en) * | 2016-05-25 | 2017-11-30 | 厦门三安光电有限公司 | Gallium nitride-based light emitting diode and preparation method therefor |
| CN108023001A (en) * | 2017-11-30 | 2018-05-11 | 武汉大学 | Etch stop layer structure, the production method containing its epitaxial wafer and the epitaxial wafer |
| CN108336193A (en) * | 2017-12-29 | 2018-07-27 | 华灿光电(苏州）有限公司 | A kind of preparation method of LED epitaxial slice |
| CN110808319A (en) * | 2019-11-11 | 2020-02-18 | 中国科学院半导体研究所 | Reverse polarity vertical light emitting diode and preparation method thereof |
| CN111276583A (en) * | 2020-02-12 | 2020-06-12 | 广东省半导体产业技术研究院 | GaN-based LED epitaxial structure, preparation method thereof and light emitting diode |
| CN111599903A (en) * | 2020-06-23 | 2020-08-28 | 东南大学 | Ultraviolet LED with polarization-doped composite polar surface electron barrier layer |
| CN114759124A (en) * | 2022-06-14 | 2022-07-15 | 江西兆驰半导体有限公司 | Light-emitting diode epitaxial wafer and preparation method thereof |
| CN114823999A (en) * | 2022-06-24 | 2022-07-29 | 江西兆驰半导体有限公司 | LED epitaxial structure with nitrogen polarity contact layer and preparation method thereof |
| CN116190519A (en) * | 2023-04-27 | 2023-05-30 | 江西兆驰半导体有限公司 | LED epitaxial wafer, preparation method thereof and LED |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103887385A (en) * | 2014-03-13 | 2014-06-25 | 中国科学院半导体研究所 | Polarity face GaN-based light-emitting device capable of improving light-emitting efficiency |
| CN103988321A (en) * | 2011-12-27 | 2014-08-13 | 夏普株式会社 | Method for fabricating three-dimensional gallium nitride structures with planar surfaces and light emitting diode (LED) using three-dimensional gallium nitride (GaN) pillar structures with planar surfaces |
| CN104835893A (en) * | 2015-05-29 | 2015-08-12 | 东南大学 | Nitrogen polar surface LED based on metal nitride semiconductor and preparation method |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102903808A (en) * | 2012-10-31 | 2013-01-30 | 合肥彩虹蓝光科技有限公司 | Shallow quantum well growth method for increasing light emitting efficiency of GaN-based LED (Light-Emitting Diode) |
| CN103633218B (en) * | 2013-12-04 | 2018-03-06 | 中国科学院半导体研究所 | A kind of Ga Nitride Light emitting device |
| CN105826440B (en) * | 2016-05-25 | 2019-01-15 | 天津三安光电有限公司 | Gallium nitride based light emitting diode and preparation method thereof |
-
2016
- 2016-05-25 CN CN201610350604.8A patent/CN105826440B/en active Active
-
2017
- 2017-05-24 WO PCT/CN2017/085655 patent/WO2017202328A1/en active Application Filing
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103988321A (en) * | 2011-12-27 | 2014-08-13 | 夏普株式会社 | Method for fabricating three-dimensional gallium nitride structures with planar surfaces and light emitting diode (LED) using three-dimensional gallium nitride (GaN) pillar structures with planar surfaces |
| CN103887385A (en) * | 2014-03-13 | 2014-06-25 | 中国科学院半导体研究所 | Polarity face GaN-based light-emitting device capable of improving light-emitting efficiency |
| CN104835893A (en) * | 2015-05-29 | 2015-08-12 | 东南大学 | Nitrogen polar surface LED based on metal nitride semiconductor and preparation method |
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|---|---|---|---|---|
| WO2017202328A1 (en) * | 2016-05-25 | 2017-11-30 | 厦门三安光电有限公司 | Gallium nitride-based light emitting diode and preparation method therefor |
| CN106784206A (en) * | 2017-01-23 | 2017-05-31 | 厦门三安光电有限公司 | Gallium nitride based light emitting diode |
| CN108023001A (en) * | 2017-11-30 | 2018-05-11 | 武汉大学 | Etch stop layer structure, the production method containing its epitaxial wafer and the epitaxial wafer |
| CN108336193A (en) * | 2017-12-29 | 2018-07-27 | 华灿光电(苏州）有限公司 | A kind of preparation method of LED epitaxial slice |
| CN108336193B (en) * | 2017-12-29 | 2020-04-07 | 华灿光电(苏州）有限公司 | Preparation method of light-emitting diode epitaxial wafer |
| CN110808319B (en) * | 2019-11-11 | 2021-08-17 | 中国科学院半导体研究所 | Reverse polarity vertical light emitting diode and preparation method thereof |
| CN110808319A (en) * | 2019-11-11 | 2020-02-18 | 中国科学院半导体研究所 | Reverse polarity vertical light emitting diode and preparation method thereof |
| CN111276583A (en) * | 2020-02-12 | 2020-06-12 | 广东省半导体产业技术研究院 | GaN-based LED epitaxial structure, preparation method thereof and light emitting diode |
| CN111599903A (en) * | 2020-06-23 | 2020-08-28 | 东南大学 | Ultraviolet LED with polarization-doped composite polar surface electron barrier layer |
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| CN114823999A (en) * | 2022-06-24 | 2022-07-29 | 江西兆驰半导体有限公司 | LED epitaxial structure with nitrogen polarity contact layer and preparation method thereof |
| CN114823999B (en) * | 2022-06-24 | 2023-02-28 | 江西兆驰半导体有限公司 | LED epitaxial structure with nitrogen polarity contact layer and preparation method thereof |
| CN116190519A (en) * | 2023-04-27 | 2023-05-30 | 江西兆驰半导体有限公司 | LED epitaxial wafer, preparation method thereof and LED |
| CN116190519B (en) * | 2023-04-27 | 2023-06-27 | 江西兆驰半导体有限公司 | LED epitaxial wafer, preparation method thereof and LED |
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| CN105826440B (en) | 2019-01-15 |
| WO2017202328A1 (en) | 2017-11-30 |
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