CN110808319A - Reverse polarity vertical light emitting diode and preparation method thereof - Google Patents

Reverse polarity vertical light emitting diode and preparation method thereof Download PDF

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CN110808319A
CN110808319A CN201911099376.1A CN201911099376A CN110808319A CN 110808319 A CN110808319 A CN 110808319A CN 201911099376 A CN201911099376 A CN 201911099376A CN 110808319 A CN110808319 A CN 110808319A
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based semiconductor
semiconductor layer
type gan
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substrate
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CN110808319B (en
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郭亚楠
闫建昌
王军喜
李晋闽
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Institute of Semiconductors of CAS
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate

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Abstract

A reverse polarity vertical light emitting diode and a method for manufacturing the same, the reverse polarity vertical light emitting diode includes: a substrate; an n-type electrode located over the substrate; an n-type GaN-based semiconductor layer located over the n-type electrode; a light emitting layer on the n-type GaN-based semiconductor layer; a p-type GaN-based semiconductor layer located over the light emitting layer; a p-type electrode located on the p-type GaN-based semiconductor layer; the n-type GaN-based semiconductor layer, the light emitting layer and the p-type GaN-based semiconductor layer are all represented by nitrogen polarity in the direction from bottom to top, and are all represented by metal polarity in the direction from top to bottom. The invention integrates the advantages of reversed polarity and a vertical structure, can effectively improve the hole concentration of the p-type GaN-based semiconductor layer, and inhibits the quantum confinement Stark effect of the quantum well active region, thereby improving the radiation recombination efficiency and internal quantum efficiency of the LED, and improving the luminous performance and reliability of the LED.

Description

Reverse polarity vertical light emitting diode and preparation method thereof
Technical Field
The invention relates to the technical field of light emitting diodes, in particular to a reverse polarity vertical light emitting diode and a preparation method thereof.
Background
Since the 90 s of the last century, GaN-based Light-emitting diodes (LEDs) have attracted much attention and have rapidly developed. The GaN-based LED has the remarkable advantages of adjustable wavelength, portability, flexibility, low energy consumption, low working voltage, directional light emission, no pollution, long service life, quick response time and the like, and has great market value in the aspects of white light illumination, display, optical communication, polymer curing, sterilization, disinfection and the like according to the difference of the wavelength.
The GaN-based material of the wurtzite structure lacks of center inversion symmetry in the c-axis direction, the positive and negative charged centers of the unit cell are not coincident, and the material shows polarity under the macroscopic condition. Generally, a GaN-based material grown on a low-temperature buffer layer using Metal-organic chemical vapor deposition (MOCVD) growth on a sapphire substrate exhibits Metal polarity. In view of the problems of material quality and current spreading, LEDs generally employ a structure with an n-type epitaxial layer on top of a p-type layer. At this time, the direction of the polarized electric field in the active region quantum well is the same as the direction of the electric field of the external positive working voltage, which causes the bending of the quantum well energy band (quantum confinement stark effect), the separation of the wave function of electrons and holes in space, and the reduction of radiation efficiency; causing leakage of carriers and a resulting efficiency-reducing effect.
Disclosure of Invention
In view of the above, the present invention is directed to a reverse-polarity vertical light emitting diode and a method for manufacturing the same, so as to at least partially solve at least one of the above technical problems.
To achieve the above object, as an aspect of the present invention, there is provided a reverse-polarity vertical light emitting diode including:
a substrate;
an n-type electrode located over the substrate;
an n-type GaN-based semiconductor layer located over the n-type electrode;
a light emitting layer on the n-type GaN-based semiconductor layer;
a p-type GaN-based semiconductor layer located over the light emitting layer;
a p-type electrode located on the p-type GaN-based semiconductor layer;
the n-type GaN-based semiconductor layer, the light emitting layer and the p-type GaN-based semiconductor layer are all represented by nitrogen polarity in the direction from bottom to top, and are all represented by metal polarity in the direction from top to bottom.
Wherein the substrate is made of any one or combination of silicon, ceramic, sapphire, silicon carbide, diamond, glass and metal;
the n-type electrode and the p-type electrode are both metal electrodes, transparent metal oxide electrodes or a combination thereof;
the luminescent layer is Alx1Iny1Ga1-x1-y1N/Alx2Iny2Ga1-x2-y2N multiple quantum wells, wherein x1, x2, y1 and y2 are all greater than or equal to 0 and less than or equal to 1;
the n-type GaN-based semiconductor layer and the p-type GaN-based semiconductor layer are single-layer or composite layers.
As another aspect of the present invention, there is provided a method for manufacturing a vertical light emitting diode with reversed polarity, comprising the steps of:
providing a temporary substrate, and sequentially depositing a sacrificial layer, a p-type GaN-based semiconductor layer, a light-emitting layer and an n-type GaN-based semiconductor layer on the temporary substrate, wherein all the layers show metal polarity along the growth direction;
preparing an n-type electrode on the n-type GaN-based semiconductor layer;
providing a substrate, and bonding the substrate and the n-type electrode;
removing the temporary substrate;
removing the residual sacrificial layer to expose the p-type GaN-based semiconductor layer;
and preparing a p-type electrode on the p-type GaN-based semiconductor layer.
Wherein the temporary substrate is selected from sapphire, silicon carbide, aluminum nitride, gallium oxide, amorphous substrate or metal.
Wherein the substrate is made of any one or combination of silicon, ceramic, sapphire, silicon carbide, diamond, glass and metal.
The invention also provides another preparation method of the reverse polarity vertical light-emitting diode, which comprises the following steps:
providing a temporary substrate, and depositing a sacrificial layer on the temporary substrate, wherein the sacrificial layer shows metal polarity along the growth direction;
preparing a porous structure on the surface and inside of the sacrificial layer;
depositing a p-type GaN-based semiconductor layer, a light emitting layer and an n-type GaN-based semiconductor layer on the sacrificial layer at high temperature in sequence, wherein all the layers show metal polarity along the growth direction;
preparing an n-type electrode on the n-type GaN-based semiconductor layer;
providing a substrate, and bonding the substrate and the n-type electrode;
removing the temporary substrate;
removing the residual sacrificial layer to expose the p-type GaN-based semiconductor layer;
and preparing a p-type electrode on the p-type GaN-based semiconductor layer.
The sacrificial layer is a single-layer n-type GaN-based semiconductor layer or a composite GaN-based semiconductor layer formed by different doping concentrations, components and growth conditions.
The method of making a porous structure comprises: laser action, dry etching using a mask, chemical/electrochemical/photoelectrochemical etching using a mask, and/or chemical/electrochemical/photoelectrochemical etching without a mask.
Wherein, in the sacrificial layer, at least one layer has an average pore diameter below 200 nm and a porosity above 50%;
the sacrificial layer undergoes morphological evolution when subjected to high temperatures, with a significant increase in porosity.
After the p-type GaN-based semiconductor layer is deposited at a high temperature and before the light emitting layer is deposited at a high temperature, the activation efficiency of the acceptors in the p-type GaN-based semiconductor layer is improved by adopting an annealing measure, and the influence of the memory effect of the acceptors in the growth chamber on the deposition of each layer on the acceptors is eliminated by adopting a high-temperature baking method of the growth chamber.
Wherein the temporary substrate is selected from sapphire, silicon carbide, aluminum nitride, gallium oxide, amorphous substrate or metal.
The material of the substrate is selected from any one of silicon, ceramic, sapphire, silicon carbide, diamond, glass and metal or the combination of the silicon, the ceramic, the sapphire, the silicon carbide, the diamond, the glass and the metal.
Based on the technical scheme, compared with the prior art, the reversed-polarity vertical light-emitting diode and the preparation method thereof have at least one of the following beneficial effects:
(1) compared with a normally-installed LED, the vertical LED has the characteristics of good current expansion, small thermal resistance, large active area and high light extraction efficiency, and has great advantages and application prospects in the aspects of light, electricity, heat, long-term reliability and the like;
(2) the invention integrates the advantages of reversed polarity and a vertical structure, can effectively improve the hole concentration of the p-type GaN-based semiconductor layer, and inhibits the quantum confinement Stark effect of the quantum well active region, thereby improving the radiation recombination efficiency and internal quantum efficiency of the LED, and improving the luminous performance and reliability of the LED.
Drawings
FIG. 1 is a schematic view of a reverse-polarity vertical LED structure according to the present invention;
FIG. 2 is a schematic diagram of a method for fabricating a vertical light emitting diode with reversed polarity according to the present invention;
FIG. 3 is a method for fabricating a reverse-polarity vertical light emitting diode based on a porous sacrificial layer.
In the above drawings, the reference numerals have the following meanings:
1. a substrate; 2. An n-type electrode; 3. An n-type GaN-based semiconductor layer;
4. a light emitting layer; 5. A p-type GaN-based semiconductor layer;
6. a p-type electrode; 7. A temporary substrate; 8. A sacrificial layer;
801. a porous structure sacrificial layer; 802. And a weak structure sacrificial layer.
Detailed Description
In order that the objects, technical solutions and advantages of the present invention will become more apparent, the present invention will be further described in detail with reference to the accompanying drawings in conjunction with the following specific embodiments.
Because the position of the product can be changed at will, the terms of orientation such as "up", "down", "left", "right" and the like in the invention only indicate relative position relationship, but are not used to limit absolute position relationship. In the following description, as shown in fig. 1 to 3 of the present invention, for convenience of description, the substrate is used as the bottom, and the layers are sequentially formed on the substrate in the top-bottom relationship, but the whole product can be placed laterally or upside down, and the relative position relationship between the specific process and the product structure is not affected.
For the problems of the LED in the prior art which adopts a structure that an n-type epitaxial layer is arranged below and a p-type layer is arranged above, the problems can be effectively alleviated by adopting the design of reversed polarity (namely a nitrogen polar surface). The inventor researches and discovers that optionally, two schemes for realizing the reverse polarity exist, namely, a structure that an n-type layer is arranged below and a p-type layer is arranged above is still adopted, but each semiconductor layer is represented as a nitrogen polar surface along the growth direction, and the material obtained by the method is poor in quality and rough in surface; and secondly, a semiconductor layer with a metal polar surface is still grown on the substrate, but a structure that a p-type layer is arranged below and an n-type layer is arranged above is adopted. The latter achieves better crystal quality and enables the p-type layer to be activated using higher temperature growth and annealing, which helps to increase the hole concentration. The present invention will therefore employ a second approach to implementing a reverse polarity LED. In addition, the invention also provides a corresponding solution for the problems that the voltage of a reversed-polarity positively-mounted LED device is higher and the current is congested, which may be brought by a p-type layer under the p-type layer.
Specifically, the invention provides a vertical LED with reversed polarity, namely, a GaN-based epitaxial layer is transferred to a new substrate through an electroplating or bonding method, so that current is injected and transported in the vertical direction. Compared with a normally-installed LED, the vertical LED has the characteristics of good current expansion, small thermal resistance, large active area and high light extraction efficiency, and has great advantages and application prospects in the aspects of light, electricity, heat, long-term reliability and the like.
Thus, the present invention discloses a reverse polarity vertical light emitting diode, comprising: a substrate; an n-type electrode located over the substrate; an n-type GaN-based semiconductor layer located over the n-type electrode; a light emitting layer on the n-type GaN-based semiconductor layer; a p-type GaN-based semiconductor layer located over the light emitting layer; a p-type electrode located on the p-type GaN-based semiconductor layer;
the n-type GaN-based semiconductor layer, the light emitting layer and the p-type GaN-based semiconductor layer are all represented by nitrogen polarity in the direction from bottom to top, and are all represented by metal polarity in the direction from top to bottom.
Wherein the substrate is made of any one or combination of silicon, ceramic, sapphire, silicon carbide, diamond, glass and metal; the n-type electrode and the p-type electrode are both metal electrodes, transparent metal oxide electrodes or a combination thereof; the luminescent layer is Alx1Iny1Ga1-x1-y1N/Alx2Iny2Ga1-x2-y2N multiple quantum wells, wherein x1, x2, y1 and y2 are all greater than or equal to 0 and less than or equal to 1; the n-type GaN-based semiconductor layer and the p-type GaN-based semiconductor layer are single-layer or composite layers.
The invention also discloses a preparation method of the reverse polarity vertical light-emitting diode, which comprises the following steps:
providing a temporary substrate, and sequentially depositing a sacrificial layer, a p-type GaN-based semiconductor layer, a light-emitting layer and an n-type GaN-based semiconductor layer on the temporary substrate, wherein all the layers show metal polarity along the growth direction;
preparing an n-type electrode on the n-type GaN-based semiconductor layer;
providing a substrate, and bonding the substrate and the n-type electrode;
removing the temporary substrate;
removing the residual sacrificial layer to expose the p-type GaN-based semiconductor layer;
and preparing a p-type electrode on the p-type GaN-based semiconductor layer.
Wherein the temporary substrate is selected from sapphire, silicon carbide, aluminum nitride, gallium oxide, amorphous substrate or metal. The material of the substrate is selected from any one of silicon, ceramic, sapphire, silicon carbide, diamond, glass and metal or the combination of the silicon, the ceramic, the sapphire, the silicon carbide, the diamond, the glass and the metal.
The invention also discloses a preparation method of another reverse polarity vertical light-emitting diode, which comprises the following steps:
providing a temporary substrate, and depositing a sacrificial layer on the temporary substrate, wherein the sacrificial layer shows metal polarity along the growth direction;
preparing a porous structure on the surface and inside of the sacrificial layer;
depositing a p-type GaN-based semiconductor layer, a light emitting layer and an n-type GaN-based semiconductor layer on the sacrificial layer at high temperature in sequence, wherein all the layers show metal polarity along the growth direction;
preparing an n-type electrode on the n-type GaN-based semiconductor layer;
providing a substrate, and bonding the substrate and the n-type electrode;
removing the temporary substrate;
removing the residual sacrificial layer to expose the p-type GaN-based semiconductor layer;
and preparing a p-type electrode on the p-type GaN-based semiconductor layer.
The sacrificial layer is a single-layer n-type GaN-based semiconductor layer or a composite GaN-based semiconductor layer formed by different doping concentrations, components and growth conditions. The method of making a porous structure comprises: laser action, dry etching using a mask, chemical/electrochemical/photoelectrochemical etching using a mask, and/or chemical/electrochemical/photoelectrochemical etching without a mask.
Wherein, in the sacrificial layer, at least one layer has an average pore diameter below 200 nm and a porosity above 50%; the sacrificial layer undergoes morphological evolution when subjected to high temperatures, with a significant increase in porosity. The sacrificial layer can be subjected to morphological evolution by using high temperature generated when each layer on the sacrificial layer grows, and can also be subjected to high temperature annealing by using other MOCVD equipment so as to generate morphological evolution.
After the p-type GaN-based semiconductor layer is deposited at a high temperature and before the light emitting layer is deposited at a high temperature, the activation efficiency of the acceptors in the p-type GaN-based semiconductor layer is improved by adopting an annealing measure, and the influence of the memory effect of the acceptors in the growth chamber on the deposition of each layer on the acceptors is eliminated by adopting a high-temperature baking method of the growth chamber.
Wherein the temporary substrate is selected from sapphire, silicon carbide, aluminum nitride, gallium oxide, amorphous substrate or metal. The material of the substrate is selected from any one of silicon, ceramic, sapphire, silicon carbide, diamond, glass and metal or the combination of the silicon, the ceramic, the sapphire, the silicon carbide, the diamond, the glass and the metal.
The technical solution of the present invention will be further understood by the following specific embodiments in conjunction with the accompanying drawings.
Example 1
Referring to fig. 1, the present invention provides a vertical light emitting LED with reversed polarity, which comprises, from bottom to top:
substrate 1: the material may be silicon, ceramic, sapphire, silicon carbide, diamond, glass, metal, or a combination thereof.
n-type electrode 2: is located on the substrate 1. May be a high-reflectivity metal electrode (e.g., Ag-based metal, Al-based metal, etc.), a transparent metal oxide electrode (e.g., indium tin oxide, magnesium zinc oxide, etc.), or a combination thereof. The n-type electrode 2 has two functions, namely, ohmic contact with a semiconductor layer to realize electric injection, and the n-type electrode is used as a reflector to emit photons transmitted to one side of the substrate 1 back, so that the escape probability of the photons in the LED is improved.
n-type GaN-based semiconductor layer 3: and the N-type electrode 2 is positioned above the N-type electrode and shows nitrogen polarity in the direction from bottom to top and shows metal polarity in the direction from top to bottom.
Light-emitting layer 4: on the n-type GaN-based semiconductor layer 3. Typically, the light-emitting layer is Alx1Iny1Ga1-x1-y1N/Alx2Iny2Ga1-x2-y2N multiple quantum wells, wherein x1, x2, y1 and y2 are more than or equal to 0 and less than or equal to 1. Each layer in the light-emitting layer 4 exhibits nitrogen polarity in the bottom-up direction and metal polarity in the top-down direction.
p-type GaN-based semiconductor layer 5: is located above the light-emitting layer 4. It shows nitrogen polarity in the bottom-up direction and metal polarity in the top-down direction.
And a p-type electrode 6 positioned on the p-type GaN-based semiconductor layer 5. May be a metal electrode, a transparent metal oxide electrode (indium tin oxide, magnesium oxide, gallium oxide, magnesium zinc oxide, etc.), or a combination thereof. The p-type electrode 6 forms ohmic contact with the p-type GaN-based semiconductor layer 5, and injects holes to the latter. When the p-type electrode 6 covers the p-type GaN semiconductor layer 5 in a large area, the p-type electrode 6 should be transparent or semi-transparent in order to extract light radiated from the light emitting layer 4.
It is to be noted that the n-type GaN-based semiconductor layer 3 and the p-type GaN-based semiconductor layer 5 may be a single layer or a composite layer (e.g., a composition graded layer, a superlattice layer, a multilayer structure composed of different compositions or different doping concentrations). And will not be elaborated upon here in detail.
Example 2
Referring to fig. 2(a) - (f), the present invention provides a method for manufacturing a vertical light emitting LED with reversed polarity, which comprises the following steps:
(1) a temporary substrate 7 is provided on which a sacrificial layer 8, a p-type GaN-based semiconductor layer 5, a light-emitting layer 4 and an n-type GaN-based semiconductor layer 3 are sequentially deposited, each layer exhibiting a metal polarity in the growth direction. The temporary substrate may be sapphire, silicon carbide, aluminum nitride, gallium oxide, an amorphous substrate, or a metal.
(2) An n-type electrode 2 is prepared on the n-type GaN-based semiconductor layer 3. May be a high-reflectivity metal electrode (e.g., Ag-based metal, Al-based metal, etc.), a transparent metal oxide electrode (e.g., indium tin oxide, magnesium zinc oxide, etc.), or a combination thereof.
(3) A substrate 1 is provided and bonded to an n-type electrode 2. The substrate material may be silicon, ceramic, sapphire, silicon carbide, diamond, glass, metal, or combinations thereof.
(4) The temporary substrate 7 is removed from the sacrificial layer 8 by laser lift-off, dry etching, wet etching or mechanical methods. The peeled off temporary substrate 7 can be reused in step (1) for recycling.
(5) Removing the residual sacrificial layer 8 to expose the p-type GaN-based semiconductor layer 5;
(6) and preparing a p-type electrode 6 on the p-type GaN-based semiconductor layer 5 to prepare the reversed-polarity vertical light emitting LED. At this time, the n-type GaN-based semiconductor layer, the light emitting layer and the p-type GaN-based semiconductor layer all exhibit nitrogen polarity in a bottom-up direction and metal polarity in a top-down direction.
Example 3
Referring to fig. 3(a) - (h), the present invention provides a method for preparing a reverse-polarity vertical light emitting diode based on a porous sacrificial layer, which comprises the following steps:
(1) a temporary substrate 7 is provided on which a sacrificial layer 8 is deposited. The sacrificial layer 8 can be a single-layer n-type GaN-based semiconductor layer or a composite GaN-based semiconductor layer formed by different doping concentrations, components and growth conditions; exhibiting metallic polarity along the growth direction. The temporary substrate 7 may be sapphire, aluminum nitride, gallium oxide, silicon carbide, amorphous substrate, or metal.
(2) A porous-structure sacrificial layer 801 is prepared inside the sacrificial layer 8 using laser action, dry etching using a mask, chemical/electrochemical/photoelectrochemical etching using a mask, and chemical/electrochemical/photoelectrochemical etching without a mask. The porous structure sacrificial layer 801 may have a single-layer or multi-layer structure, but at least one layer has an average pore diameter of 200 nm or less and a porosity of 50% or more.
(3) On the sacrificial layer 801 with the porous structure, a p-type GaN-based semiconductor layer 5, a light emitting layer 4 and an n-type GaN-based semiconductor layer 3 are sequentially deposited at high temperature, and each layer shows metal polarity along the growth direction. During this high temperature deposition process, the porous structural sacrificial layer 801 morphologically evolves into a weakly structural sacrificial layer 802 with significantly increased porosity. Alternatively, morphological evolution of the porous structure sacrificial layer 801 may also be obtained by ex-situ high temperature processing other than MOCVD. It should be noted that after the p-type GaN-based semiconductor layer 5 is deposited at a high temperature and before the light-emitting layer 4 is deposited at a high temperature, the growth can be interrupted, measures such as annealing, surface treatment and the like are adopted to improve the acceptor activation efficiency of the p-type GaN-based semiconductor layer 5, and a high-temperature baking method of the growth chamber is adopted to eliminate the influence of the memory effect of the acceptor in the growth chamber on the deposition of the layers thereon. The growth temperatures of the p-type GaN-based semiconductor layer 5, the light-emitting layer 4, and the n-type GaN-based semiconductor layer 3 may be different; in particular, the growth temperature of the p-type GaN-based semiconductor layer 5 may be higher than that of the light emitting layer 4 to obtain better crystal quality and hole concentration. Since the p-type GaN-based semiconductor layer 5 is laterally epitaxial on the porous structure sacrificial layer 801, bending and annihilation of dislocations may occur therein, and thus the crystal quality may be advantageously improved compared to the epitaxial material on the planar structure sacrificial layer 8.
(4) An n-type electrode 2 is prepared on the n-type GaN-based semiconductor layer 3.
(5) Providing a substrate 1, and bonding the substrate with the n-type electrode 2; the substrate 1 material may be silicon, ceramic, sapphire, silicon carbide, diamond, glass, metal or a combination thereof.
(6) Removing the temporary substrate 7 by using the weak mechanical property of the weak structure sacrificial layer 802 through a mechanical method;
(7) removing the residual weak structure sacrificial layer 802 to expose the p-type GaN-based semiconductor layer 5;
(8) a p-type electrode 6 is prepared on the p-type GaN-based semiconductor layer 5. At this time, the n-type GaN-based semiconductor layer, the light emitting layer and the p-type GaN-based semiconductor layer all exhibit nitrogen polarity in a bottom-up direction and metal polarity in a top-down direction.
In addition, the above definitions of the components and methods are not limited to the specific structures, shapes or modes mentioned in the embodiments, and those skilled in the art can easily modify or replace the embodiments, and in summary, the above described embodiments are further detailed description of the objects, technical solutions and advantages of the present invention, it should be understood that the above described embodiments are only specific embodiments of the present invention, and are not intended to limit the present invention, and any modifications, equivalents, improvements and the like made within the spirit and principle of the present invention should be included in the protection scope of the present invention.

Claims (10)

1. A reverse polarity vertical light emitting diode comprising:
a substrate;
an n-type electrode located over the substrate;
an n-type GaN-based semiconductor layer located over the n-type electrode;
a light emitting layer on the n-type GaN-based semiconductor layer;
a p-type GaN-based semiconductor layer located over the light emitting layer;
a p-type electrode located on the p-type GaN-based semiconductor layer;
the n-type GaN-based semiconductor layer, the light emitting layer and the p-type GaN-based semiconductor layer are all represented by nitrogen polarity in the direction from bottom to top, and are all represented by metal polarity in the direction from top to bottom.
2. The reversed polarity vertical light emitting diode of claim 1, wherein the substrate is made of a material selected from any one of silicon, ceramic, sapphire, silicon carbide, diamond, glass, metal, or a combination thereof;
the n-type electrode and the p-type electrode are both metal electrodes, transparent metal oxide electrodes or a combination thereof;
the luminescent layer is Alx1Iny1Ga1-x1-y1N/Alx2Iny2Ga1-x2-y2N multiple quantum wells, wherein x1, x2, y1 and y2 are all greater than or equal to 0 and less than or equal to 1;
the n-type GaN-based semiconductor layer and the p-type GaN-based semiconductor layer are single-layer or composite layers.
3. A preparation method of a reverse-polarity vertical light emitting diode is characterized by comprising the following steps:
providing a temporary substrate, and sequentially depositing a sacrificial layer, a p-type GaN-based semiconductor layer, a light-emitting layer and an n-type GaN-based semiconductor layer on the temporary substrate, wherein all the layers show metal polarity along the growth direction;
preparing an n-type electrode on the n-type GaN-based semiconductor layer;
providing a substrate, and bonding the substrate and the n-type electrode;
removing the temporary substrate;
removing the residual sacrificial layer to expose the p-type GaN-based semiconductor layer;
and preparing a p-type electrode on the p-type GaN-based semiconductor layer.
4. A method of manufacturing according to claim 3, wherein the temporary substrate is selected from sapphire, silicon carbide, aluminum nitride, gallium oxide, amorphous substrate, or metal.
5. The method according to claim 3, wherein the substrate is made of a material selected from any one of silicon, ceramic, sapphire, silicon carbide, diamond, glass, metal, or a combination thereof.
6. A preparation method of a reverse-polarity vertical light emitting diode is characterized by comprising the following steps:
providing a temporary substrate, and depositing a sacrificial layer on the temporary substrate, wherein the sacrificial layer shows metal polarity along the growth direction;
preparing a porous structure on the surface and inside of the sacrificial layer;
depositing a p-type GaN-based semiconductor layer, a light emitting layer and an n-type GaN-based semiconductor layer on the sacrificial layer at high temperature in sequence, wherein all the layers show metal polarity along the growth direction;
preparing an n-type electrode on the n-type GaN-based semiconductor layer;
providing a substrate, and bonding the substrate and the n-type electrode;
removing the temporary substrate;
removing the residual sacrificial layer to expose the p-type GaN-based semiconductor layer;
and preparing a p-type electrode on the p-type GaN-based semiconductor layer.
7. The preparation method according to claim 6, wherein the sacrificial layer is a single-layer n-type GaN-based semiconductor layer or a composite GaN-based semiconductor layer composed of different doping concentrations, components and growth conditions;
the method of making a porous structure comprises: laser action, dry etching using a mask, chemical/electrochemical/photoelectrochemical etching using a mask, and/or chemical/electrochemical/photoelectrochemical etching without a mask.
8. The method according to claim 6, wherein at least one of the sacrificial layers has an average pore diameter of 200 nm or less and a porosity of 50% or more;
the sacrificial layer undergoes morphological evolution when subjected to high temperatures, with a significant increase in porosity.
9. The preparation method of claim 6, wherein after the p-type GaN-based semiconductor layer is deposited at a high temperature and before the light-emitting layer is deposited at a high temperature, annealing is adopted to improve the activation efficiency of the acceptor in the p-type GaN-based semiconductor layer, and the influence of the memory effect of the acceptor in the growth chamber on the deposition of the layers thereon is eliminated by adopting a high-temperature baking method of the growth chamber.
10. The production method according to claim 6, wherein the temporary substrate is selected from sapphire, silicon carbide, aluminum nitride, gallium oxide, an amorphous substrate, or a metal;
the material of the substrate is selected from any one of silicon, ceramic, sapphire, silicon carbide, diamond, glass and metal or the combination of the silicon, the ceramic, the sapphire, the silicon carbide, the diamond, the glass and the metal.
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