CN109860359A - A kind of gallium nitride based LED epitaxial slice and preparation method thereof - Google Patents
A kind of gallium nitride based LED epitaxial slice and preparation method thereof Download PDFInfo
- Publication number
- CN109860359A CN109860359A CN201811419037.2A CN201811419037A CN109860359A CN 109860359 A CN109860359 A CN 109860359A CN 201811419037 A CN201811419037 A CN 201811419037A CN 109860359 A CN109860359 A CN 109860359A
- Authority
- CN
- China
- Prior art keywords
- layer
- sublayer
- type semiconductor
- semiconductor layer
- gallium nitride
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
The invention discloses a kind of gallium nitride based LED epitaxial slices and preparation method thereof, belong to technical field of semiconductors.The gallium nitride based LED epitaxial slice includes substrate, n type semiconductor layer, active layer and p type semiconductor layer, and the n type semiconductor layer, the active layer and the p type semiconductor layer stack gradually over the substrate；The n type semiconductor layer is the GaN layer for adulterating Si；Inserted at least one composite layer in the n type semiconductor layer, the composite layer includes the first sublayer, the second sublayer and third sublayer stacked gradually；First sublayer is to adulterate the GaN layer of Mg, and second sublayer is undoped AlGaN layer, and the third sublayer is to adulterate the GaN layer of Ge.The present invention can effectively facilitate the extending transversely of electronics, so that electronics is uniformly distributed in n type semiconductor layer, improve the antistatic effect of LED.
Description
Technical field
The present invention relates to technical field of semiconductors, in particular to a kind of gallium nitride based LED epitaxial slice and its production
Method.
Background technique
Light emitting diode (English: Light Emitting Diode, referred to as: LED) it is a kind of semi-conductor electricity that can be luminous
Subcomponent.LED is widely paid close attention to because having many advantages, such as energy conservation and environmental protection, high reliablity, long service life, is being carried on the back in recent years
Scape light source and field of display screen yield unusually brilliant results, and start to march to domestic lighting market.Since domestic lighting lays particular emphasis on product
Power and energy saving and service life, therefore reduce LED series resistance and improve LED antistatic effect seem particularly critical.
Epitaxial wafer is the primary finished product in LED preparation process.Existing LED epitaxial wafer include substrate, n type semiconductor layer,
Active layer and p type semiconductor layer, n type semiconductor layer, active layer and p type semiconductor layer stack gradually on substrate.P-type semiconductor
Layer carries out the hole of recombination luminescence for providing, and n type semiconductor layer is used to provide the electronics for carrying out recombination luminescence, and active layer is used for
The radiation recombination for carrying out electrons and holes shines, and substrate is used to provide growing surface for epitaxial material.
In the implementation of the present invention, the inventor finds that the existing technology has at least the following problems:
The material of substrate generally selects sapphire, and the material of n type semiconductor layer, active layer and p type semiconductor layer usually selects
Select gallium nitride-based material.Since substrate material and gallium nitride-based material are dissimilar materials, differences between lattice constant is larger, therefore substrate
There are biggish lattice mismatches between n type semiconductor layer.The stress and defect that lattice mismatch generates can more introducing gallium nitride
It in sill, and is constantly accumulated in epitaxial process, causes to accumulate more stress and defect in n type semiconductor layer.
Epitaxial wafer carries out in the positive cartridge chip or flip-chip of chip technology formation simultaneously, the electricity in n type semiconductor layer
Son is migrated along the direction vertical with the stacking direction of epitaxial wafer.In order to avoid the forward direction of positive cartridge chip or flip-chip
Overtension, n type semiconductor layer would generally be thicker, are easy to draw when the N type dopants such as heavily-doped Si in this way in n type semiconductor layer
Enter more defect and impurity.
More defect influences whether the extension of electronics in n type semiconductor layer, leads to point of the electronics in n type semiconductor layer
Cloth is uneven, influences the antistatic effect of LED.
Summary of the invention
The embodiment of the invention provides a kind of gallium nitride based LED epitaxial slice and preparation method thereof, it is able to solve existing
The problem of extension for thering is defect more in technology n type semiconductor layer to influence whether electronics.The technical solution is as follows:
On the one hand, the embodiment of the invention provides a kind of gallium nitride based LED epitaxial slice, the gallium nitride base hairs
Optical diode epitaxial wafer includes substrate, n type semiconductor layer, active layer and p type semiconductor layer, and the n type semiconductor layer described has
Active layer and the p type semiconductor layer stack gradually over the substrate；The n type semiconductor layer is the GaN layer for adulterating Si；It is described
Inserted at least one composite layer in n type semiconductor layer, the composite layer include the first sublayer stacked gradually, the second sublayer and
Third sublayer；First sublayer is to adulterate the GaN layer of Mg, and second sublayer is undoped AlGaN layer, third
Layer is the GaN layer of doping Ge.
Optionally, the composite layer with a thickness of 35nm~100nm.
Optionally, the quantity of the composite layer is 2~10, and multiple composite layers stack gradually.
Optionally, the doping concentration of Mg is dense less than or equal to the doping of Ge in the third sublayer in first sublayer
Degree.
Preferably, in the third sublayer Ge doping concentration be less than the n type semiconductor layer in Si doping concentration.
It is highly preferred that in the third sublayer doping concentration of Ge and Si in the n type semiconductor layer doping concentration phase
At least one poor order of magnitude.
Optionally, in second sublayer Al component content be less than second sublayer in Ga component content.
Optionally, the thickness of first sublayer is greater than the thickness of second sublayer, and the thickness of second sublayer is small
In the thickness of the third sublayer.
On the other hand, the embodiment of the invention provides a kind of production method of gallium nitride based LED epitaxial slice, institutes
Stating production method includes:
One substrate is provided；
N type semiconductor layer, active layer and p type semiconductor layer are successively grown over the substrate；
Wherein, the n type semiconductor layer is the GaN layer for adulterating Si；It is multiple inserted at least one in the n type semiconductor layer
Layer is closed, the composite layer includes the first sublayer, the second sublayer and third sublayer stacked gradually；First sublayer is doping Mg
GaN layer, second sublayer be undoped AlGaN layer, the third sublayer be doping Ge GaN layer.
Optionally, the growth conditions of the composite layer is identical as the growth conditions of the n type semiconductor layer, the growth item
Part includes growth temperature and growth pressure.
Technical solution provided in an embodiment of the present invention has the benefit that
By being inserted at least one composite layer in n type semiconductor layer, composite layer includes the first sublayer stacked gradually,
Two sublayers and third sublayer, the second sublayer are undoped AlGaN layer, and AlGaN layer can stop the extension of dislocation and defect, mention
The crystal quality of high n type semiconductor layer, improve as defect accumulation and caused by warpage, avoid more in n type semiconductor layer
Defect influences whether the extension of electronics.The first sublayer is to adulterate the GaN layer of Mg simultaneously, and third sublayer is to adulterate the GaN layer of Ge,
There are two-dimensional electron gas for the interface of GaN layer and AlGaN layer, the extending transversely of electronics can be effectively facilitated, so that electronics is in N-type
It is uniformly distributed in semiconductor layer, improves the antistatic effect of LED.
Detailed description of the invention
To describe the technical solutions in the embodiments of the present invention more clearly, make required in being described below to embodiment
Attached drawing is briefly described, it should be apparent that, drawings in the following description are only some embodiments of the invention, for
For those of ordinary skill in the art, without creative efforts, it can also be obtained according to these attached drawings other
Attached drawing.
Fig. 1 is a kind of structural schematic diagram of gallium nitride based LED epitaxial slice provided in an embodiment of the present invention；
Fig. 2 is the structural schematic diagram of composite layer provided in an embodiment of the present invention；
Fig. 3 is a kind of process of the production method of gallium nitride based LED epitaxial slice provided in an embodiment of the present invention
Figure.
Specific embodiment
To make the object, technical solutions and advantages of the present invention clearer, below in conjunction with attached drawing to embodiment party of the present invention
Formula is described in further detail.
The embodiment of the invention provides a kind of gallium nitride based LED epitaxial slices.Fig. 1 provides for the embodiment of the present invention
A kind of gallium nitride based LED epitaxial slice structural schematic diagram.Referring to Fig. 1, the gallium nitride based LED epitaxial slice
Including substrate 10, n type semiconductor layer 20, active layer 30 and p type semiconductor layer 40, n type semiconductor layer 20, active layer 30 and p-type
Semiconductor layer 40 is sequentially laminated on substrate 10.
In the present embodiment, n type semiconductor layer 20 is the GaN layer for adulterating Si.As shown in Figure 1, being inserted in n type semiconductor layer 20
Enter to have at least one composite layer 100.Fig. 2 is the structural schematic diagram of composite layer provided in an embodiment of the present invention.Referring to fig. 2, compound
Layer 100 includes the first sublayer 101, the second sublayer 102 and the third sublayer 103 stacked gradually.First sublayer 101 is doping Mg
GaN layer, the second sublayer 102 are undoped AlGaN layer, and third sublayer 103 is to adulterate the GaN layer of Ge.
The embodiment of the present invention includes stacking gradually by being inserted at least one composite layer, composite layer in n type semiconductor layer
The first sublayer, the second sublayer and third sublayer, the second sublayer be undoped AlGaN layer, AlGaN layer can stop dislocation and
The extension of defect, improves the crystal quality of n type semiconductor layer, improve as defect accumulation and caused by warpage, avoid N-type from partly leading
More defect influences whether the extension of electronics in body layer.The first sublayer is to adulterate the GaN layer of Mg simultaneously, and third sublayer is doping
There are two-dimensional electron gas for the interface of the GaN layer of Ge, GaN layer and AlGaN layer, can effectively facilitate the extending transversely of electronics, make
It obtains electronics to be uniformly distributed in n type semiconductor layer, improves the antistatic effect of LED.
In addition, though the GaN layer of doping Mg can provide hole, and directly contacted with the n type semiconductor layer for providing electronics,
But the GaN and AlGaN layer interface for adulterating Mg, there are two-dimensional electron gas, two-dimensional electron gas can be to avoid the GaN layer of doping Mg
The electronics that the hole of offer and n type semiconductor layer provide directly carries out non-radiative recombination.And adulterate the Lattice Matching of the GaN layer of Ge
Degree preferably, can improve whole crystal quality.
Optionally, the quantity of composite layer 100 can be 2~10, such as 6, and multiple composite layers 100 stack gradually.It is more
A composite layer stacks gradually, and can use superlattice structure and further decreases dislocation and defect, avoids the insertion of composite layer to N-type
The negatively influencing of the crystal quality of semiconductor layer, while enhancing Electron Extended effect.
Optionally, the thickness of composite layer 100 can be 35nm~100nm, such as 70nm.Effectively improving n type semiconductor layer
Crystal quality and promote in n type semiconductor layer to avoid damage to the crystal structure of n type semiconductor layer in the case where Electron Extended,
Guarantee to provide sufficient amount of electronics for active layer.
Optionally, the thickness of the first sublayer 101 can be greater than the thickness of the second sublayer 102, and the thickness of the second sublayer 102 can
To be less than the thickness of third sublayer 103.The thickness of first sublayer and third sublayer is larger, is conducive to keep whole GaN crystal
Structure avoids damaging the crystal structure of n type semiconductor layer.
Specifically, the thickness of the first sublayer 101 can be 20nm~50nm, such as 30nm.The thickness of second sublayer 102 can be with
For 10nm~30nm, such as 20nm.The thickness of third sublayer 103 can be 20nm~50nm, such as 30nm.
Optionally, the thickness of n type semiconductor layer 20 can be the 5 of the thickness for the composite layer being inserted into n type semiconductor layer 20
Times~20 times, such as 10 times, to maintain the main structure of n type semiconductor layer, guarantee to provide sufficient amount of electronics for active layer.
Preferably, the thickness of N-type semiconductor 20 can be 1 μm~3 μm, such as 2 μm.
Optionally, the doping concentration of Mg can be dense less than or equal to the doping of Ge in third sublayer 103 in the first sublayer 101
Degree.Composite layer, which can be integrally presented, provides the state of electronics, avoids causing negative shadow to active layer offer electronics to n type semiconductor layer
It rings.
Preferably, the doping concentration of Ge can be less than the doping concentration of Si in n type semiconductor layer 20 in third sublayer 103.
The doping concentration of composite layer entirety is lower than the doping concentration of n type semiconductor layer, avoids impurity too much to the crystal of n type semiconductor layer
Quality causes negatively influencing.
It is highly preferred that the doping concentration of Ge can phase with the doping concentration of Si in n type semiconductor layer 20 in third sublayer 103
At least one poor order of magnitude realizes that effect is good.For example, the doping concentration of Ge is 10 in third sublayer 10317/cm3, N-type semiconductor
The doping concentration of Si is 10 in layer 2019/cm3, then Si in the doping concentration of Ge and n type semiconductor layer 20 in third sublayer 103
Doping concentration differs two orders of magnitude.
Specifically, the doping concentration of Mg can be 5*10 in the first sublayer 10115/cm3~6*1017/cm3, such as 5*
1016cm3.The doping concentration of Ge can be 5*10 in third sublayer 10316/cm3~6*1017/cm3, such as 1017/cm3.N-type is partly led
The doping concentration of Si can be 10 in body layer 2018/cm3~1020/cm3, such as 1019/cm3。
Optionally, the content of Al component can be less than the content of Ga component in the second sublayer 102 in the second sublayer 102.The
Two sublayers integrally maintain the crystal structure of GaN, higher with the crystal match degree of the first sublayer and third sublayer, can also avoid Al
The content of component is too high, is formed and is stopped to electron injection active layer.
Specifically, the second sublayer 102 can be AlxGa1-xN layers, 0.04 < x < 0.5.
Specifically, the material of substrate 10 can use sapphire (main material is aluminum oxide), as crystal orientation is
[0001] sapphire.Active layer 30 may include that multiple Quantum Well and multiple quantum are built, and multiple Quantum Well and multiple quantum are built
Alternately laminated setting；The material of Quantum Well can use InGaN (InGaN), such as InyGa1-yN, 0 < y < 1, what quantum was built
Material can use gallium nitride.The material of p type semiconductor layer 40 can be using the gallium nitride of p-type doping (such as magnesium).
Further, the thickness of Quantum Well can be 3nm~4nm, preferably 3.5nm；The thickness that quantum is built can be 9nm
~20nm, preferably 15nm；The quantity of Quantum Well is identical as the quantity that quantum is built, and the quantity that quantum is built can be 5~11,
Preferably 8.The thickness of p type semiconductor layer 40 can be 100nm~800nm, preferably 450nm；P in p type semiconductor layer 40
The doping concentration of type dopant can be 1018/cm3~1020/cm3, preferably 1019/cm3。
Optionally, as shown in Figure 1, the gallium nitride based LED epitaxial slice can also include buffer layer 51, buffer layer
51 are arranged between substrate 10 and n type semiconductor layer 20, are answered with alleviate that lattice mismatch between substrate material and gallium nitride generates
Power and defect, and nuclearing centre is provided for gallium nitride material epitaxial growth.
Specifically, the material of buffer layer 51 can use gallium nitride.
Further, the thickness of buffer layer 51 can be 15nm~35nm, preferably 25nm.
Preferably, as shown in Figure 1, the gallium nitride based LED epitaxial slice can also include undoped gallium nitride layer
52, undoped gallium nitride layer 52 is arranged between buffer layer 51 and n type semiconductor layer 20, further to alleviate substrate material and nitrogen
Change the stress and defect that lattice mismatch generates between gallium, provides crystal quality preferable growing surface for epitaxial wafer main structure.
In specific implementation, buffer layer is the gallium nitride of the layer of low-temperature epitaxy first in patterned substrate, because
This is also referred to as low temperature buffer layer.The longitudinal growth for carrying out gallium nitride in low temperature buffer layer again, will form multiple mutually independent three
Island structure is tieed up, referred to as three-dimensional nucleating layer；Then it is carried out between each three-dimensional island structure on all three-dimensional island structures
The cross growth of gallium nitride forms two-dimension plane structure, referred to as two-dimentional retrieving layer；The finally high growth temperature one on two-dimensional growth layer
The thicker gallium nitride of layer, referred to as intrinsic gallium nitride layer.By three-dimensional nucleating layer, two-dimentional retrieving layer and intrinsic gallium nitride in the present embodiment
Layer is referred to as undoped gallium nitride layer.
Further, the thickness of undoped gallium nitride layer 52 can be 1 μm~5 μm, preferably 3 μm.
Optionally, it as shown in Figure 1, the gallium nitride based LED epitaxial slice can also include stress release layer 60, answers
Power releasing layer 60 is arranged between n type semiconductor layer 20 and active layer 30, to produce to lattice mismatch between sapphire and gallium nitride
Raw stress is discharged, and the crystal quality of active layer is improved, and is conducive to electrons and holes in active layer and is carried out radiation recombination hair
Light improves the internal quantum efficiency of LED, and then improves the luminous efficiency of LED.
Specifically, the material of stress release layer 60 can use gallium indium aluminum nitrogen (AlInGaN), can be released effectively sapphire
The stress generated with gallium nitride crystal lattice mismatch, improves the crystal quality of epitaxial wafer, improves the luminous efficiency of LED.
Preferably, the molar content of aluminium component can be less than or equal to 0.2, in stress release layer 60 in stress release layer 60
The molar content of indium component can be less than or equal to 0.05, to avoid adverse effect is caused.
Further, the thickness of stress release layer 60 can be 50nm~500nm, preferably 300nm.
Optionally, as shown in Figure 1, the gallium nitride based LED epitaxial slice can also include electronic barrier layer 71, electricity
Sub- barrier layer 71 is arranged between active layer 30 and p type semiconductor layer 40, to avoid electron transition into p type semiconductor layer with sky
Cave carries out non-radiative recombination, reduces the luminous efficiency of LED.
Specifically, the material of electronic barrier layer 71 can be using the aluminium gallium nitride alloy of p-type doping, such as AlzGa1-zN, 0.1 < z
< 0.5.
Further, the thickness of electronic barrier layer 71 can be 50nm~150nm, preferably 100nm.
Preferably, as shown in Figure 1, the gallium nitride based LED epitaxial slice can also include low temperature P-type layer 72, low temperature
P-type layer 72 is arranged between active layer 30 and electronic barrier layer 71, has caused to avoid the higher growth temperature of electronic barrier layer
Phosphide atom in active layer is precipitated, and influences the luminous efficiency of light emitting diode.
Specifically, the material of low temperature P-type layer 72 can be identical as the material of p type semiconductor layer 40.In the present embodiment,
The material of low temperature P-type layer 72 can be the gallium nitride of p-type doping.
Further, the thickness of low temperature P-type layer 72 can be 10nm~50nm, preferably 30nm；P in low temperature P-type layer 72
The doping concentration of type dopant can be 1018/cm3~1020/cm3, preferably 1019/cm3。
Optionally, as shown in Figure 1, the gallium nitride based LED epitaxial slice can also include contact layer 80, contact layer
80 are arranged on p type semiconductor layer 40, to be formed between the electrode or transparent conductive film that are formed in chip fabrication technique
Ohmic contact.
Specifically, the material of contact layer 80 can be using the InGaN or gallium nitride of p-type doping.
Further, the thickness of contact layer 80 can be 5nm~300nm, preferably 100nm；P-type is adulterated in contact layer 80
The doping concentration of agent can be 1021/cm3~1022/cm3, preferably 5*1021/cm3。
The embodiment of the invention provides a kind of production methods of gallium nitride based LED epitaxial slice, are suitable for production figure
Gallium nitride based LED epitaxial slice shown in 1.Fig. 3 is a kind of gallium nitride based light emitting diode provided in an embodiment of the present invention
The flow chart of the production method of epitaxial wafer.Referring to Fig. 3, which includes:
Step 201: a substrate is provided.
Optionally, which may include:
Controlled at 1000 DEG C~1200 DEG C (preferably 1100 DEG C), in hydrogen atmosphere to substrate carry out 6 minutes~
It makes annealing treatment within 10 minutes (preferably 8 minutes)；
Nitrogen treatment is carried out to substrate.
The surface for cleaning substrate through the above steps avoids being conducive to the life for improving epitaxial wafer in impurity incorporation epitaxial wafer
Long quality.
Step 202: successively growing n type semiconductor layer, active layer and p type semiconductor layer on substrate.
Wherein, n type semiconductor layer is the GaN layer for adulterating Si；It is multiple inserted at least one composite layer in n type semiconductor layer
Closing layer includes the first sublayer, the second sublayer and third sublayer stacked gradually；First sublayer is to adulterate the GaN layer of Mg, the second son
Layer is undoped AlGaN layer, and third sublayer is to adulterate the GaN layer of Ge.
Optionally, the growth conditions of composite layer can be identical with the growth conditions of n type semiconductor layer, and growth conditions includes life
Long temperature and growth pressure.Using identical growth conditions, realize more simple and convenient.
Specifically, the growth temperature of composite layer can be 1000 DEG C~1200 DEG C, such as 1100 DEG C；The growth pressure of composite layer
It can be 100torr~500torr, such as 300torr.
Specifically, which may include:
The first step, controlled at 1000 DEG C~1200 DEG C (preferably 1100 DEG C), pressure is 100torr~500torr
(preferably 300torr) grows n type semiconductor layer on substrate, and grows at least one in the growth course of n type semiconductor layer
A composite layer；
Second step grows active layer on n type semiconductor layer；The growth temperature of Quantum Well be 720 DEG C~829 DEG C (preferably
It is 760 DEG C), the growth pressure of Quantum Well is 100torr~500torr (preferably 300torr)；Quantum build growth temperature be
850 DEG C~959 DEG C (preferably 900 DEG C), the growth pressure that quantum is built is 100torr~500torr (preferably 300torr)；
Third step, controlled at 850 DEG C~1080 DEG C (preferably 960 DEG C), pressure is that 100torr~300torr is (excellent
It is selected as 200torr), the growing P-type semiconductor layer on active layer.
Optionally, before the first step, which can also include:
Grown buffer layer on substrate.
Correspondingly, n type semiconductor layer is grown on the buffer layer.
Specifically, grown buffer layer on substrate may include:
Controlled at 400 DEG C~600 DEG C (preferably 500 DEG C), pressure be 400torr~600torr (preferably
500torr), grown buffer layer on substrate；
Controlled at 1000 DEG C~1200 DEG C (preferably 1100 DEG C), pressure be 400torr~600torr (preferably
500torr), the in-situ annealing carried out 5 minutes~10 minutes (preferably 8 minutes) to buffer layer is handled.
Preferably, on substrate after grown buffer layer, which can also include:
Undoped gallium nitride layer is grown on the buffer layer.
Correspondingly, n type semiconductor layer is grown on undoped gallium nitride layer.
Specifically, undoped gallium nitride layer is grown on the buffer layer, may include:
Controlled at 1000 DEG C~1100 DEG C (preferably 1050 DEG C), pressure be 100torr~500torr (preferably
300torr), undoped gallium nitride layer is grown on the buffer layer.
Optionally, before second step, which can also include:
The growth stress releasing layer on n type semiconductor layer.
Correspondingly, active layer is grown on stress release layer.
Specifically, the growth stress releasing layer on n type semiconductor layer may include:
Controlled at 800 DEG C~1100 DEG C (preferably 950 DEG C), pressure be 100torr~500torr (preferably
300torr), the growth stress releasing layer on n type semiconductor layer.
Optionally, before third step, which can also include:
Electronic barrier layer is grown on active layer.
Correspondingly, p type semiconductor layer is grown on electronic barrier layer.
Specifically, electronic barrier layer is grown on active layer, may include:
Controlled at 850 DEG C~1080 DEG C (preferably 960 DEG C), pressure be 200torr~500torr (preferably
350torr), electronic barrier layer is grown on active layer.
Preferably, before growing electronic barrier layer on active layer, which can also include:
The growing low temperature P-type layer on active layer.
Correspondingly, electronic barrier layer is grown in low temperature P-type layer.
Specifically, the growing low temperature P-type layer on active layer may include:
Controlled at 600 DEG C~850 DEG C (preferably 750 DEG C), pressure be 100torr~600torr (preferably
300torr), the growing low temperature P-type layer on active layer.
Optionally, after third step, which can also include:
Contact layer is grown on p type semiconductor layer.
Specifically, contact layer is grown on p type semiconductor layer, may include:
Controlled at 850 DEG C~1050 DEG C (preferably 950 DEG C), pressure be 100torr~300torr (preferably
200torr), contact layer is grown on p type semiconductor layer.
It should be noted that after above-mentioned epitaxial growth terminates, can first by temperature be reduced to 650 DEG C~850 DEG C (preferably
It is 750 DEG C), the annealing of 5 minutes~15 minutes (preferably 10 minutes) is carried out to epitaxial wafer in nitrogen atmosphere, then again
The temperature of epitaxial wafer is reduced to room temperature.
Control temperature, pressure each mean temperature, pressure in the reaction chamber of control growth epitaxial wafer, and specially metal is organic
Compound chemical gaseous phase deposition (English: Metal-organic Chemical Vapor Deposition, referred to as: MOCVD) set
Standby reaction chamber.Using trimethyl gallium or triethyl-gallium as gallium source when realization, high-purity ammonia is as nitrogen source, and trimethyl indium is as indium
Source, trimethyl aluminium is as silicon source, and silane is as silicon source, and tetramethyl germanium is as ge source, and two luxuriant magnesium are as magnesium source.
The foregoing is merely presently preferred embodiments of the present invention, is not intended to limit the invention, it is all in spirit of the invention and
Within principle, any modification, equivalent replacement, improvement and so on be should all be included in the protection scope of the present invention.
Claims (10)
1. a kind of gallium nitride based LED epitaxial slice, the gallium nitride based LED epitaxial slice includes substrate, N-type half
Conductor layer, active layer and p type semiconductor layer, the n type semiconductor layer, the active layer and the p type semiconductor layer successively layer
It folds over the substrate；The n type semiconductor layer is the GaN layer for adulterating Si；It is characterized in that, being inserted in the n type semiconductor layer
Enter to have at least one composite layer, the composite layer includes the first sublayer, the second sublayer and third sublayer stacked gradually；Described
One sublayer is to adulterate the GaN layer of Mg, and second sublayer is undoped AlGaN layer, and the third sublayer is to adulterate the GaN of Ge
Layer.
2. gallium nitride based LED epitaxial slice according to claim 1, which is characterized in that the thickness of the composite layer
For 35nm~100nm.
3. gallium nitride based LED epitaxial slice according to claim 1 or 2, which is characterized in that the composite layer
Quantity is 2~10, and multiple composite layers stack gradually.
4. gallium nitride based LED epitaxial slice according to claim 1 or 2, which is characterized in that first sublayer
The doping concentration of middle Mg is less than or equal to the doping concentration of Ge in the third sublayer.
5. gallium nitride based LED epitaxial slice according to claim 4, which is characterized in that Ge in the third sublayer
Doping concentration be less than the n type semiconductor layer in Si doping concentration.
6. gallium nitride based LED epitaxial slice according to claim 5, which is characterized in that Ge in the third sublayer
Doping concentration differ at least one order of magnitude with the doping concentration of Si in the n type semiconductor layer.
7. gallium nitride based LED epitaxial slice according to claim 1 or 2, which is characterized in that second sublayer
The content of middle Al component is less than the content of Ga component in second sublayer.
8. gallium nitride based LED epitaxial slice according to claim 1 or 2, which is characterized in that first sublayer
Thickness be greater than the thickness of second sublayer, the thickness of second sublayer is less than the thickness of the third sublayer.
9. a kind of production method of gallium nitride based LED epitaxial slice, which is characterized in that the production method includes:
One substrate is provided；
N type semiconductor layer, active layer and p type semiconductor layer are successively grown over the substrate；
Wherein, the n type semiconductor layer is the GaN layer for adulterating Si；It is compound inserted at least one in the n type semiconductor layer
Layer, the composite layer includes the first sublayer, the second sublayer and third sublayer stacked gradually；First sublayer is doping Mg
GaN layer, second sublayer are undoped AlGaN layer, and the third sublayer is to adulterate the GaN layer of Ge.
10. manufacturing method according to claim 9, which is characterized in that the growth conditions of the composite layer and the N-type half
The growth conditions of conductor layer is identical, and the growth conditions includes growth temperature and growth pressure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811419037.2A CN109860359B (en) | 2018-11-26 | 2018-11-26 | Gallium nitride-based light emitting diode epitaxial wafer and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811419037.2A CN109860359B (en) | 2018-11-26 | 2018-11-26 | Gallium nitride-based light emitting diode epitaxial wafer and manufacturing method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN109860359A true CN109860359A (en) | 2019-06-07 |
| CN109860359B CN109860359B (en) | 2021-10-08 |
Family
ID=66890288
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811419037.2A Active CN109860359B (en) | 2018-11-26 | 2018-11-26 | Gallium nitride-based light emitting diode epitaxial wafer and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109860359B (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111261755A (en) * | 2020-03-19 | 2020-06-09 | 湘能华磊光电股份有限公司 | LED epitaxial growth method |
| CN112802933A (en) * | 2021-02-04 | 2021-05-14 | 华灿光电(苏州）有限公司 | Light emitting diode epitaxial wafer and preparation method thereof |
| CN113990990A (en) * | 2021-09-01 | 2022-01-28 | 华灿光电（浙江）有限公司 | Micro light-emitting diode epitaxial wafer and manufacturing method thereof |
| CN114284409A (en) * | 2022-03-08 | 2022-04-05 | 江西兆驰半导体有限公司 | Light emitting diode and preparation method thereof |
| CN116885066A (en) * | 2023-09-04 | 2023-10-13 | 江西兆驰半导体有限公司 | Light-emitting diode epitaxial wafer, preparation method thereof and light-emitting diode |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080251781A1 (en) * | 2007-04-16 | 2008-10-16 | Samsung Electro-Mechanics Co., Ltd. | Nitride semiconductor light emitting device |
| CN107195737A (en) * | 2017-06-30 | 2017-09-22 | 华灿光电(苏州）有限公司 | A kind of LED epitaxial slice and its manufacture method |
| CN107195738A (en) * | 2017-06-30 | 2017-09-22 | 华灿光电（浙江）有限公司 | A kind of LED epitaxial slice and its manufacture method |
| CN206849857U (en) * | 2017-06-21 | 2018-01-05 | 安徽三安光电有限公司 | A kind of epitaxial structure and light emitting diode |
| CN108110098A (en) * | 2017-10-25 | 2018-06-01 | 华灿光电（浙江）有限公司 | A kind of gallium nitride based LED epitaxial slice and its manufacturing method |
-
2018
- 2018-11-26 CN CN201811419037.2A patent/CN109860359B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080251781A1 (en) * | 2007-04-16 | 2008-10-16 | Samsung Electro-Mechanics Co., Ltd. | Nitride semiconductor light emitting device |
| CN206849857U (en) * | 2017-06-21 | 2018-01-05 | 安徽三安光电有限公司 | A kind of epitaxial structure and light emitting diode |
| CN107195737A (en) * | 2017-06-30 | 2017-09-22 | 华灿光电(苏州）有限公司 | A kind of LED epitaxial slice and its manufacture method |
| CN107195738A (en) * | 2017-06-30 | 2017-09-22 | 华灿光电（浙江）有限公司 | A kind of LED epitaxial slice and its manufacture method |
| CN108110098A (en) * | 2017-10-25 | 2018-06-01 | 华灿光电（浙江）有限公司 | A kind of gallium nitride based LED epitaxial slice and its manufacturing method |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111261755A (en) * | 2020-03-19 | 2020-06-09 | 湘能华磊光电股份有限公司 | LED epitaxial growth method |
| CN111261755B (en) * | 2020-03-19 | 2021-06-01 | 湘能华磊光电股份有限公司 | LED epitaxial growth method |
| CN112802933A (en) * | 2021-02-04 | 2021-05-14 | 华灿光电(苏州）有限公司 | Light emitting diode epitaxial wafer and preparation method thereof |
| CN112802933B (en) * | 2021-02-04 | 2022-05-13 | 华灿光电(苏州）有限公司 | Light emitting diode epitaxial wafer and preparation method thereof |
| CN113990990A (en) * | 2021-09-01 | 2022-01-28 | 华灿光电（浙江）有限公司 | Micro light-emitting diode epitaxial wafer and manufacturing method thereof |
| CN113990990B (en) * | 2021-09-01 | 2023-05-09 | 华灿光电（浙江）有限公司 | Micro light-emitting diode epitaxial wafer and manufacturing method thereof |
| CN114284409A (en) * | 2022-03-08 | 2022-04-05 | 江西兆驰半导体有限公司 | Light emitting diode and preparation method thereof |
| CN114284409B (en) * | 2022-03-08 | 2022-05-24 | 江西兆驰半导体有限公司 | Light emitting diode and preparation method thereof |
| CN116885066A (en) * | 2023-09-04 | 2023-10-13 | 江西兆驰半导体有限公司 | Light-emitting diode epitaxial wafer, preparation method thereof and light-emitting diode |
| CN116885066B (en) * | 2023-09-04 | 2023-12-01 | 江西兆驰半导体有限公司 | Light-emitting diode epitaxial wafer, preparation method thereof and light-emitting diode |
Also Published As
| Publication number | Publication date |
|---|---|
| CN109860359B (en) | 2021-10-08 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN109860359A (en) | A kind of gallium nitride based LED epitaxial slice and preparation method thereof | |
| CN109786529A (en) | A kind of gallium nitride based LED epitaxial slice and preparation method thereof | |
| CN106601882B (en) | A kind of epitaxial wafer and its manufacturing method of light emitting diode | |
| CN109860358B (en) | Gallium nitride-based light emitting diode epitaxial wafer and preparation method thereof | |
| CN109216514A (en) | A kind of gallium nitride based LED epitaxial slice and preparation method thereof | |
| CN109346576A (en) | A kind of LED epitaxial slice and preparation method thereof | |
| CN109256445A (en) | A kind of gallium nitride based LED epitaxial slice and preparation method thereof | |
| CN109192831A (en) | A kind of gallium nitride based LED epitaxial slice and preparation method thereof | |
| CN109065679A (en) | A kind of LED epitaxial slice and its manufacturing method | |
| CN109346583A (en) | A kind of LED epitaxial slice and preparation method thereof | |
| CN109103312B (en) | Gallium nitride-based light emitting diode epitaxial wafer and manufacturing method thereof | |
| CN109065682B (en) | A kind of LED epitaxial slice and its manufacturing method | |
| CN109545918A (en) | A kind of gallium nitride based LED epitaxial slice and preparation method thereof | |
| CN109309150A (en) | A kind of gallium nitride based LED epitaxial slice and preparation method thereof | |
| CN109346568A (en) | A kind of LED epitaxial slice and preparation method thereof | |
| CN109671817A (en) | A kind of LED epitaxial slice and preparation method thereof | |
| CN109473514A (en) | A kind of gallium nitride based LED epitaxial slice and its manufacturing method | |
| CN109273571A (en) | A kind of gallium nitride based LED epitaxial slice and preparation method thereof | |
| CN109686823A (en) | A kind of gallium nitride based LED epitaxial slice and preparation method thereof | |
| CN108550668A (en) | A kind of LED epitaxial slice and preparation method thereof | |
| CN109192826B (en) | A kind of LED epitaxial slice and preparation method thereof | |
| CN109473521A (en) | A kind of LED epitaxial slice and preparation method thereof | |
| CN109473516A (en) | A kind of gallium nitride based LED epitaxial slice and its growing method | |
| CN109087977A (en) | A kind of gallium nitride based LED epitaxial slice and preparation method thereof | |
| CN109301038A (en) | A kind of gallium nitride based LED epitaxial slice and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |