CN109473514A - A kind of gallium nitride based LED epitaxial slice and its manufacturing method - Google Patents
A kind of gallium nitride based LED epitaxial slice and its manufacturing method Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
- H01L33/145—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
- H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
Abstract
The invention discloses a kind of gallium nitride based LED epitaxial slice and its manufacturing methods, belong to technical field of semiconductors.The gallium nitride based LED epitaxial slice includes substrate, buffer layer, undoped gallium nitride layer, defect barrier layer, n type semiconductor layer, active layer and p type semiconductor layer, the buffer layer, the undoped gallium nitride layer, the defect barrier layer, the n type semiconductor layer, the active layer and the p type semiconductor layer stack gradually over the substrate, and the material on the defect barrier layer uses aluminium nitride.The present invention on undoped gallium nitride layer by forming aln layer, the potential barrier of aln layer is higher, the defect that lattice mismatch generates between substrate material and epitaxial material can be effectively stopped to extend along the direction of epitaxial growth, reduce the defect concentration inside epitaxial wafer, the crystal quality of epitaxial wafer is improved, and then promotes the antistatic breakdown capability and incident photon-to-electron conversion efficiency of epitaxial wafer.
Description
Technical field
The present invention relates to technical field of semiconductors, in particular to a kind of gallium nitride based LED epitaxial slice and its manufacture
Method.
Background technique
Light emitting diode (English: Light Emitting Diode, referred to as: LED) it is that one kind can be converted to electric energy
The semiconductor diode of luminous energy.LED has the advantages that energy-efficient, environmentally protective, the neck such as shows in traffic instruction, outdoor full color
Domain has a wide range of applications.Semiconductor solid lighting is realized especially with great power LED, and being expected to, which becomes light source of new generation, enters
Huge numbers of families cause the mankind to illuminate the revolution of history.
Epitaxial wafer is the primary finished product of LED production, by growing semiconductor film on the matched monocrystal material of crystal structure
Film forms, such as growing gallium nitride sill on a sapphire substrate.Gallium nitride-based material includes gallium nitride (GaN), InGaN
(InGaN), aluminium gallium nitride alloy (AlGaN) and aluminium indium gallium nitrogen (AlInGaN) etc., with forbidden bandwidth, big, electron drift velocity is not easy
Saturation, breakdown field is powerful, dielectric constant is small, good heat conductivity, high temperature resistant, it is anticorrosive the advantages that, be microwave power transistor
With one of the semiconductor material of significant application value in excellent material and blue green light luminescent device.
Existing GaN-based LED epitaxial wafer includes substrate, buffer layer, undoped gallium nitride layer, n type semiconductor layer, has
Active layer and p type semiconductor layer.Substrate is used to provide growing surface for epitaxial material, generallys use graphical sapphire substrate (English
Text: Patterned Sapphire Substrate, referred to as: PSS), the dislocation that on the one hand can effectively reduce epitaxial material is close
Degree, improves the luminous efficiency of LED；On the other hand the angle of emergence that can change total reflection light, increases the light extraction efficiency of LED.PSS packet
Include multiple lug bosses in array distribution and the recessed portion between each lug boss.Buffer layer is used for as extension sheet material
Growth provides nuclearing centre, is laid on recessed portion and each lug boss, material generallys use aluminium nitride or gallium nitride.It does not mix
Miscellaneous gallium nitride layer during filling and leading up recessed portion, utilizes the direction of growth on two neighboring lug boss for filling and leading up recessed portion
Difference, the dislocation interaction for generating lattice mismatch between substrate material and epitaxial material and bury in oblivion.N type semiconductor layer,
Active layer and p type semiconductor layer are successively laid on undoped gallium nitride layer, and n type semiconductor layer carries out recombination luminescence for providing
Electronics, p type semiconductor layer be used for provides carry out recombination luminescence hole, active layer be used for carry out electrons and holes radiation answer
It closes and shines.
In the implementation of the present invention, the inventor finds that the existing technology has at least the following problems:
The cooperation of graphical sapphire substrate, buffer layer and undoped gallium nitride layer can improve substrate material and extension material
Lattice mismatch between material, the defect concentration that lattice mismatch between substrate material and epitaxial material is generated reduce by two quantity etc.
Grade, but the cooperation of graphical sapphire substrate, buffer layer and undoped gallium nitride layer mainly improves recessed portion and extension material
Lattice mismatch between material, to the lattice mismatch between lug boss and epitaxial material almost without effect.By to epitaxial wafer into
Row transmission electron microscope slice analysis finds that the top of lug boss will appear obviously line defect, these line defects can reduce outer
Prolong the antistatic breakdown capability and incident photon-to-electron conversion efficiency of piece.
Summary of the invention
The embodiment of the invention provides a kind of gallium nitride based LED epitaxial slice and its manufacturing method, it is able to solve existing
There is the problem of technology.The technical solution is as follows:
On the one hand, the embodiment of the invention provides a kind of gallium nitride based LED epitaxial slice, the gallium nitride base hairs
Optical diode epitaxial wafer includes substrate, buffer layer, undoped gallium nitride layer, n type semiconductor layer, active layer and p type semiconductor layer,
The buffer layer, the undoped gallium nitride layer, the n type semiconductor layer, the active layer and the p type semiconductor layer are successively
Over the substrate, the gallium nitride based LED epitaxial slice further includes defect barrier layer, the defect barrier layer for stacking
It is arranged between the undoped gallium nitride layer and the n type semiconductor layer, the material on the defect barrier layer uses aluminium nitride.
Optionally, the defect barrier layer with a thickness of 20nm~200nm.
Optionally, the refractive index on the defect barrier layer is 1.5~2.0.
On the other hand, the embodiment of the invention provides a kind of manufacturing method of gallium nitride based LED epitaxial slice, institutes
Stating manufacturing method includes:
One substrate is provided；
Buffer layer, undoped gallium nitride layer, defect barrier layer, n type semiconductor layer, active is sequentially formed over the substrate
Layer and p type semiconductor layer；
Wherein, the material on the defect barrier layer uses aluminium nitride.
Optionally, the defect barrier layer is formed using physical gas phase deposition technology.
Preferably, the formation temperature on the defect barrier layer is 400 DEG C~600 DEG C.
Preferably, the defect barrier layer with a thickness of 20nm~200nm.
It is highly preferred that the refractive index on the defect barrier layer is 1.5~2.0.
Further, the power of Pvd equipment is 1500W~3000W when the defect barrier layer is formed.
Further, the body of the argon gas and oxygen that are passed through in physical vapour deposition (PVD) reaction chamber when the defect barrier layer is formed
Product is than being 10~40.
Technical solution provided in an embodiment of the present invention has the benefit that
By forming aln layer on undoped gallium nitride layer, the potential barrier of aln layer is higher, can effectively stop to serve as a contrast
The defect that lattice mismatch generates between bottom material and epitaxial material extends along the direction of epitaxial growth, reduces lacking inside epitaxial wafer
Density is fallen into, improves the crystal quality of epitaxial wafer, and then promote the antistatic breakdown capability and incident photon-to-electron conversion efficiency of epitaxial wafer.Simultaneously
Lattice more matches between aluminium nitride and gallium nitride, can generate new defect to avoid subsequent.
Detailed description of the invention
To describe the technical solutions in the embodiments of the present invention more clearly, make required in being described below to embodiment
Attached drawing is briefly described, it should be apparent that, drawings in the following description are only some embodiments of the invention, for
For those of ordinary skill in the art, without creative efforts, it can also be obtained according to these attached drawings other
Attached drawing.
Fig. 1 is a kind of structural schematic diagram of gallium nitride based LED epitaxial slice provided in an embodiment of the present invention；
Fig. 2 is a kind of process of the manufacturing method of gallium nitride based LED epitaxial slice provided in an embodiment of the present invention
Figure.
Specific embodiment
To make the object, technical solutions and advantages of the present invention clearer, below in conjunction with attached drawing to embodiment party of the present invention
Formula is described in further detail.
The embodiment of the invention provides a kind of gallium nitride based LED epitaxial slices.Fig. 1 provides for the embodiment of the present invention
A kind of gallium nitride based LED epitaxial slice structural schematic diagram.Referring to Fig. 1, the gallium nitride based LED epitaxial slice
Including substrate 10, buffer layer 20, undoped gallium nitride layer 30, defect barrier layer 40, n type semiconductor layer 50, active layer 60 and p-type
Semiconductor layer 70, buffer layer 20, undoped gallium nitride layer 30, defect barrier layer 40, n type semiconductor layer 50, active layer 60 and p-type
Semiconductor layer 70 is sequentially laminated on substrate 10.
In the present embodiment, the material on defect barrier layer 40 uses aluminium nitride.
For the embodiment of the present invention by forming aln layer on undoped gallium nitride layer, the potential barrier of aln layer is higher, can
Effectively to stop the defect that lattice mismatch generates between substrate material and epitaxial material to extend along the direction of epitaxial growth, reduce outer
Prolong the defect concentration inside piece, improves the crystal quality of epitaxial wafer, and then promote the antistatic breakdown capability and photoelectricity of epitaxial wafer
Transformation efficiency.Lattice more matches between aluminium nitride and gallium nitride simultaneously, can generate new defect to avoid subsequent.
Optionally, the thickness on defect barrier layer 40 can be 20nm~200nm, preferably 110nm.If defect barrier layer
Thickness be less than 20nm, then may influence the blocking effect of defect since the thickness on defect barrier layer is smaller, can not be effective
Improve the antistatic breakdown capability and incident photon-to-electron conversion efficiency of epitaxial wafer；It, may if the thickness on defect barrier layer is greater than 200nm
The crystal structure of undoped gallium nitride layer is influenced to extension since the thickness on defect barrier layer is larger, is generated new lattice and is lost
Match.
Optionally, the refractive index on defect barrier layer is 1.5~2.0, preferably 1.9.When the refractive index on defect barrier layer exists
When between 1.5~2.0, the crystal quality on defect barrier layer is higher, can effectively improve the crystal quality of epitaxial wafer, and then promoted
The antistatic breakdown capability and incident photon-to-electron conversion efficiency of epitaxial wafer.And there is certain reflecting effect, the front for improving LED goes out
Light.
Optionally, substrate 10 can be graphical sapphire substrate, or plain film Sapphire Substrate.Fig. 1 is only with lining
Bottom be graphical sapphire substrate for, be not intended as limitation of the present invention.
In specific implementation, when substrate is graphical sapphire substrate, graphical sapphire substrate includes in array point
The multiple lug bosses and the recessed portion between each lug boss of cloth, buffer layer are laid on recessed portion and each lug boss
(thickness of buffer layer is equal with the thickness of buffer layer on lug boss on recessed portion), undoped gallium nitride layer are arranged on the buffer layer
And recessed portion is filled and led up (on recessed portion on the thickness and lug boss of undoped gallium nitride layer the thickness of undoped gallium nitride layer difference
Height equal to lug boss relative to recessed portion), defect barrier layer, n type semiconductor layer, active layer and p type semiconductor layer are successively
It is laid on undoped gallium nitride layer.Defect barrier layer can the line defect on effectively stopper projection portion top extend to N-type and partly lead
Body layer even in active layer, is equivalent to the antistatic breakdown capability and incident photon-to-electron conversion efficiency for improving epitaxial wafer.
And when substrate is plain film Sapphire Substrate, buffer layer, undoped gallium nitride layer, defect barrier layer, N-type semiconductor
Layer, active layer and p type semiconductor layer are successively laid on substrate.Defect barrier layer still can effectively stop substrate material and nitrogen
The defect for changing lattice mismatch generation between gallium based material extends to n type semiconductor layer and improves epitaxial wafer even in active layer
Crystal quality, and then improve the antistatic breakdown capability and incident photon-to-electron conversion efficiency of epitaxial wafer.
Optionally, the material of buffer layer 20 can use aluminium nitride, can also use gallium nitride.When the material of buffer layer is adopted
When with aluminium nitride, since sapphire main component is that aluminum oxide, aluminium nitride and aluminum oxide and gallium nitride all have
Identical element, therefore buffer layer can also alleviate substrate material other than the growth for epitaxial material provides nuclearing centre
Lattice mismatch between epitaxial material.When the material of buffer layer uses gallium nitride, buffer layer and undoped gallium nitride layer are adopted
With identical material, be conducive to undoped gallium nitride layer and grow on the buffer layer, while when buffer layer uses low-temperature epitaxy, delaying
The second-rate of layer is rushed, also there is certain relaxation effect to the lattice mismatch between substrate material and epitaxial material.
Further, the thickness of buffer layer 20 can be 15nm~35nm, preferably 25nm.
Correspondingly, the thickness of undoped gallium nitride layer 30 can be 1 μm~5 μm, preferably 3 μm.
Specifically, the material of n type semiconductor layer 50 can use the gallium nitride of n-type doping (such as silicon).Active layer 60 can be with
It is built including multiple Quantum Well and multiple quantum, multiple Quantum Well and multiple quantum build alternately laminated setting；The material of Quantum Well can
To use InGaN (InGaN), such as InxGa1-xN, 0 < x < 1, the material that quantum is built can use gallium nitride.P-type semiconductor
The material of layer 70 can be using the gallium nitride of p-type doping (such as magnesium).
Further, the thickness of n type semiconductor layer 50 can be 1 μm~5 μm, preferably 3 μm；N in n type semiconductor layer 50
The doping concentration of type dopant can be 1018cm-3~1019cm-3, preferably 5*1018cm-3.The thickness of Quantum Well can be
2.5nm~3.5nm, preferably 3nm；The thickness that quantum is built can be 9nm~20nm, preferably 15nm；The quantity of Quantum Well with
The quantity that quantum is built is identical, and the quantity that quantum is built can be 5~15, preferably 10.The thickness of p type semiconductor layer 70 can
Think 100nm~800nm, preferably 450nm；The doping concentration of P-type dopant can be 10 in p type semiconductor layer 7018/cm3
~1020/cm3, preferably 1019/cm3。
Optionally, it as shown in Figure 1, the gallium nitride based LED epitaxial slice can also include stress release layer 81, answers
Power releasing layer 81 is arranged between n type semiconductor layer 50 and active layer 60, to produce to lattice mismatch between sapphire and gallium nitride
Raw stress is discharged, and the crystal quality of active layer is improved, and is conducive to electrons and holes in active layer and is carried out radiation recombination hair
Light improves the internal quantum efficiency of LED, and then improves the luminous efficiency of LED.
Specifically, the material of stress release layer 81 can use gallium indium aluminum nitrogen (AlInGaN), can be released effectively sapphire
The stress generated with gallium nitride crystal lattice mismatch, improves the crystal quality of epitaxial wafer, improves the luminous efficiency of LED.
Preferably, the molar content of aluminium component can be less than or equal to 0.2, in stress release layer 81 in stress release layer 81
The molar content of indium component can be less than or equal to 0.05, to avoid adverse effect is caused.
Further, the thickness of stress release layer 81 can be 50nm~500nm, preferably 300nm.
Optionally, as shown in Figure 1, the gallium nitride based LED epitaxial slice can also include electronic barrier layer 82, electricity
Sub- barrier layer 82 is arranged between active layer 60 and p type semiconductor layer 70, to avoid electron transition into p type semiconductor layer with sky
Cave carries out non-radiative recombination, reduces the luminous efficiency of LED.
Specifically, the material of electronic barrier layer 82 can be using the aluminium gallium nitride alloy (AlGaN) of p-type doping, such as AlyGa1-yN,
0.1 < y < 0.5.
Further, the thickness of electronic barrier layer 82 can be 50nm~150nm, preferably 100nm.
Preferably, as shown in Figure 1, the gallium nitride based LED epitaxial slice can also include low temperature P-type layer 83, low temperature
P-type layer 83 is arranged between active layer 60 and electronic barrier layer 82, has caused to avoid the higher growth temperature of electronic barrier layer
Phosphide atom in active layer is precipitated, and influences the luminous efficiency of light emitting diode.
Specifically, the material of low temperature P-type layer 83 can be identical as the material of p type semiconductor layer 70.In the present embodiment,
The material of low temperature P-type layer 83 can be the gallium nitride of p-type doping.
Further, the thickness of low temperature P-type layer 83 can be 10nm~50nm, preferably 30nm；P in low temperature P-type layer 83
The doping concentration of type dopant can be 1018/cm3~1020/cm3, preferably 1019/cm3。
Optionally, as shown in Figure 1, the gallium nitride based LED epitaxial slice can also include contact layer 84, contact layer
84 are arranged on p type semiconductor layer 70, to be formed between the electrode or transparent conductive film that are formed in chip fabrication technique
Ohmic contact.
Specifically, the material of contact layer 84 can be using the InGaN or gallium nitride of p-type doping.
Further, the thickness of contact layer 84 can be 5nm~300nm, preferably 100nm；P-type is adulterated in contact layer 84
The doping concentration of agent can be 1021/cm3~1022/cm3, preferably 5*1021/cm3。
The embodiment of the invention provides a kind of manufacturing methods of gallium nitride based LED epitaxial slice, are suitable for manufacture figure
Gallium nitride based LED epitaxial slice shown in 1.Fig. 2 is a kind of gallium nitride based light emitting diode provided in an embodiment of the present invention
The flow chart of the manufacturing method of epitaxial wafer.Referring to fig. 2, which includes:
Step 201: a substrate is provided.
Optionally, which may include:
Controlled at 1000 DEG C~1200 DEG C (preferably 1100 DEG C), in hydrogen atmosphere to substrate carry out 6 minutes~
It makes annealing treatment within 10 minutes (preferably 8 minutes)；
Nitrogen treatment is carried out to substrate.
The surface for cleaning substrate through the above steps avoids being conducive to the life for improving epitaxial wafer in impurity incorporation epitaxial wafer
Long quality.
Step 202: sequentially form on substrate buffer layer, undoped gallium nitride layer, defect barrier layer, n type semiconductor layer,
Active layer and p type semiconductor layer.
In the present embodiment, the material on defect barrier layer uses aluminium nitride.
Optionally, defect barrier layer can using physical vapour deposition (PVD) (English: Physical Vapor Deposition,
Referred to as: PVD) technology is formed, and the defect barrier layer crystal quality of formation is preferable, is conducive to the antistatic breakdown energy for promoting epitaxial wafer
Power and incident photon-to-electron conversion efficiency.
In practical applications, defect barrier layer can also using metallo-organic compound chemical gaseous phase deposition (English:
Metal Organic Chemical Vapor Deposition, referred to as: MOCVD) technology formed.
Preferably, the formation temperature on defect barrier layer can be 400 DEG C~600 DEG C, such as 500 DEG C.The shape on defect barrier layer
It is lower at temperature, the decomposition of gallium nitride can be inhibited.
Correspondingly, if defect barrier layer is formed using MOCVD technology, the formation temperature on defect barrier layer can be
800 DEG C~1000 DEG C, the crystal quality on defect barrier layer is preferable.
Preferably, the thickness on defect barrier layer can be 20nm~200nm.
It is highly preferred that the refractive index on defect barrier layer can be 1.5~2.0.
Further, the power of Pvd equipment can be 1500W~3000W when defect barrier layer is formed, and lack
The volume ratio for falling into the argon gas and oxygen that are passed through in physical vapour deposition (PVD) reaction chamber when barrier layer is formed is 10~40, to match defect
The thickness on barrier layer, so that the refractive index on defect barrier layer reaches between 1.5~2.0, the crystal quality on defect barrier layer is higher,
It can effectively improve the crystal quality of epitaxial wafer, and then promote the antistatic breakdown capability and incident photon-to-electron conversion efficiency of epitaxial wafer.
Optionally, when the material of buffer layer uses gallium nitride, buffer layer can be formed using MOCVD technology；Work as buffering
When the material of layer uses aluminium nitride, buffer layer can be formed using MOCVD technology, can also be formed using PVD technique.Work as buffering
When layer is using MOCVD formation, buffer layer can be formed with undoped gallium nitride layer in the same equipment, reduce more exchange device
Number improves production efficiency；When buffer layer is using PVD technique formation, the formation temperature of buffer layer is lower, can inhibit to nitrogenize
The decomposition of gallium.
Further, when the material of buffer layer uses gallium nitride, buffer layer can be formed in the following way:
Controlled at 500 DEG C~600 DEG C (preferably 540 DEG C), pressure be 400torr~600torr (preferably
500torr), grown buffer layer on substrate；
Controlled at 1000 DEG C~1100 DEG C (preferably 1040 DEG C), pressure be 400torr~600torr (preferably
500torr), the in-situ annealing carried out 5 minutes~10 minutes (preferably 8 minutes) to buffer layer is handled.
When the material of buffer layer uses aluminium nitride, the generation type of buffer layer can be identical as defect barrier layer, herein
No longer it is described in detail.
Specifically, undoped gallium nitride layer, n type semiconductor layer, active layer and p type semiconductor layer can use MOCVD
Technology is formed, and specific forming process can be such that
Controlled at 1000 DEG C~1100 DEG C (preferably 1050 DEG C), pressure be 100torr~500torr (preferably
300torr), undoped gallium nitride layer is grown on the buffer layer；
Controlled at 950 DEG C~1100 DEG C (preferably 1020 DEG C), pressure be 100torr~500torr (preferably
300torr), n type semiconductor layer is grown on undoped gallium nitride layer；
Active layer is grown on n type semiconductor layer；Wherein, the growth temperature of Quantum Well be 720 DEG C~829 DEG C (preferably
760 DEG C), the growth pressure of Quantum Well is 100torr~500torr (preferably 300torr)；Quantum build growth temperature be
850 DEG C~959 DEG C (preferably 900 DEG C), the growth pressure that quantum is built is 100torr~500torr (preferably 300torr)；
Controlled at 850 DEG C~1050 DEG C (preferably 950 DEG C), pressure be 100torr~300torr (preferably
200torr), the growing P-type semiconductor layer on active layer.
Optionally, before growing active layer on n type semiconductor layer, which can also include:
The growth stress releasing layer on n type semiconductor layer.
Correspondingly, active layer is grown on stress release layer.
Specifically, the growth stress releasing layer on n type semiconductor layer may include:
Controlled at 800 DEG C~1100 DEG C (preferably 950 DEG C), pressure be 100torr~500torr (preferably
300torr), the growth stress releasing layer on n type semiconductor layer.
Optionally, on active layer before growing P-type semiconductor layer, which can also include:
Electronic barrier layer is grown on active layer.
Correspondingly, p type semiconductor layer is grown on electronic barrier layer.
Specifically, electronic barrier layer is grown on active layer, may include:
Controlled at 850 DEG C~1080 DEG C (preferably 960 DEG C), pressure be 200torr~500torr (preferably
350torr), electronic barrier layer is grown on active layer.
Preferably, before growing electronic barrier layer on active layer, which can also include:
The growing low temperature P-type layer on active layer.
Correspondingly, electronic barrier layer is grown in low temperature P-type layer.
Specifically, the growing low temperature P-type layer on active layer may include:
Controlled at 600 DEG C~850 DEG C (preferably 750 DEG C), pressure be 100torr~600torr (preferably
300torr), the growing low temperature P-type layer on active layer.
Optionally, on active layer after growing P-type semiconductor layer, which can also include:
Contact layer is grown on p type semiconductor layer.
Specifically, contact layer is grown on p type semiconductor layer, may include:
Controlled at 850 DEG C~1050 DEG C (preferably 950 DEG C), pressure be 100torr~300torr (preferably
200torr), contact layer is grown on p type semiconductor layer.
It should be noted that after above-mentioned epitaxial growth terminates, can first by temperature be reduced to 650 DEG C~850 DEG C (preferably
It is 750 DEG C), the annealing of 5 minutes~15 minutes (preferably 10 minutes) is carried out to epitaxial wafer in nitrogen atmosphere, then again
The temperature of epitaxial wafer is reduced to room temperature.
Control temperature, pressure each mean that control forms the temperature in the reaction chamber of epitaxial wafer, pressure, and specially MOCVD is set
The reaction chamber of standby reaction chamber or PVD equipment.Using trimethyl gallium (TMGa) as gallium source when realization, high-purity ammonia (NH3) make
For nitrogen source, trimethyl indium (TMIn) is used as indium source, and trimethyl aluminium (TMAl) is used as silicon source, and N type dopant selects silane (SiH4),
P-type dopant selects two luxuriant magnesium (CP2Mg)。
The foregoing is merely presently preferred embodiments of the present invention, is not intended to limit the invention, it is all in spirit of the invention and
Within principle, any modification, equivalent replacement, improvement and so on be should all be included in the protection scope of the present invention.
Claims (10)
1. a kind of gallium nitride based LED epitaxial slice, the gallium nitride based LED epitaxial slice includes substrate, buffering
Layer, undoped gallium nitride layer, n type semiconductor layer, active layer and p type semiconductor layer, the buffer layer, the undoped gallium nitride
Layer, the n type semiconductor layer, the active layer and the p type semiconductor layer stack gradually over the substrate, and feature exists
In the gallium nitride based LED epitaxial slice further includes defect barrier layer, and the defect barrier layer setting is not mixed described
Between miscellaneous gallium nitride layer and the n type semiconductor layer, the material on the defect barrier layer uses aluminium nitride.
2. gallium nitride based LED epitaxial slice according to claim 1, which is characterized in that the defect barrier layer
With a thickness of 20nm~200nm.
3. gallium nitride based LED epitaxial slice according to claim 1 or 2, which is characterized in that the defect stops
The refractive index of layer is 1.5~2.0.
4. a kind of manufacturing method of gallium nitride based LED epitaxial slice, which is characterized in that the manufacturing method includes:
One substrate is provided；
Sequentially form over the substrate buffer layer, undoped gallium nitride layer, defect barrier layer, n type semiconductor layer, active layer and
P type semiconductor layer；
Wherein, the material on the defect barrier layer uses aluminium nitride.
5. manufacturing method according to claim 4, which is characterized in that the defect barrier layer uses physical vapour deposition (PVD) skill
Art is formed.
6. manufacturing method according to claim 5, which is characterized in that the formation temperature on the defect barrier layer is 400 DEG C
~600 DEG C.
7. manufacturing method according to claim 5 or 6, which is characterized in that the defect barrier layer with a thickness of 20nm~
200nm。
8. manufacturing method according to claim 7, which is characterized in that the refractive index on the defect barrier layer be 1.5~
2.0。
9. manufacturing method according to claim 8, which is characterized in that physical vapour deposition (PVD) when the defect barrier layer is formed
The power of equipment is 1500W~3000W.
10. manufacturing method according to claim 8, which is characterized in that physical vapor is heavy when the defect barrier layer is formed
The volume ratio of the argon gas and oxygen that are passed through in product reaction chamber is 10~40.
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
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| CN114388669A (en) * | 2021-12-28 | 2022-04-22 | 安徽三安光电有限公司 | Light-emitting diode, light-emitting device and preparation method of light-emitting diode |
| CN116525730A (en) * | 2023-07-05 | 2023-08-01 | 江西兆驰半导体有限公司 | Preparation method of light-emitting diode epitaxial wafer and epitaxial wafer |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN113764556A (en) * | 2021-09-10 | 2021-12-07 | 圆融光电科技股份有限公司 | Compound N type barrier layer of gallium nitride-based light emitting diode epitaxial wafer and gallium nitride-based light emitting diode epitaxial wafer |
| CN114388669A (en) * | 2021-12-28 | 2022-04-22 | 安徽三安光电有限公司 | Light-emitting diode, light-emitting device and preparation method of light-emitting diode |
| CN114388669B (en) * | 2021-12-28 | 2024-03-29 | 安徽三安光电有限公司 | Light emitting diode, light emitting device and preparation method of light emitting diode |
| CN116525730A (en) * | 2023-07-05 | 2023-08-01 | 江西兆驰半导体有限公司 | Preparation method of light-emitting diode epitaxial wafer and epitaxial wafer |
| CN116525730B (en) * | 2023-07-05 | 2023-09-08 | 江西兆驰半导体有限公司 | Preparation method of light-emitting diode epitaxial wafer and epitaxial wafer |
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