CN109216514A - A kind of gallium nitride based LED epitaxial slice and preparation method thereof - Google Patents
A kind of gallium nitride based LED epitaxial slice and preparation method thereof Download PDFInfo
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- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 136
- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 134
- 238000002360 preparation method Methods 0.000 title abstract description 4
- 239000004065 semiconductor Substances 0.000 claims abstract description 73
- 239000000758 substrate Substances 0.000 claims abstract description 35
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 28
- 239000004411 aluminium Substances 0.000 claims abstract description 28
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 28
- 238000010276 construction Methods 0.000 claims abstract description 26
- CUOITRGULIVMPC-UHFFFAOYSA-N azanylidynescandium Chemical compound [Sc]#N CUOITRGULIVMPC-UHFFFAOYSA-N 0.000 claims abstract description 24
- 238000004519 manufacturing process Methods 0.000 claims description 14
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 8
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 8
- 229910052733 gallium Inorganic materials 0.000 claims description 8
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- 230000003139 buffering effect Effects 0.000 claims description 2
- 239000013078 crystal Substances 0.000 abstract description 15
- 229910052594 sapphire Inorganic materials 0.000 abstract description 13
- 239000010980 sapphire Substances 0.000 abstract description 13
- 230000006798 recombination Effects 0.000 abstract description 8
- 238000005215 recombination Methods 0.000 abstract description 8
- 230000007547 defect Effects 0.000 abstract description 7
- 238000004020 luminiscence type Methods 0.000 abstract description 5
- 239000000463 material Substances 0.000 description 38
- 230000004888 barrier function Effects 0.000 description 12
- 239000002019 doping agent Substances 0.000 description 12
- 229910052706 scandium Inorganic materials 0.000 description 5
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 5
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000000137 annealing Methods 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 210000004209 hair Anatomy 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000012071 phase Substances 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 230000001934 delay Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000004134 energy conservation Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 239000007792 gaseous phase Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 description 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 1
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
- H01L33/145—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
The invention discloses a kind of gallium nitride based LED epitaxial slices and preparation method thereof, belong to technical field of semiconductors.Epitaxial wafer includes substrate, buffer layer, three-dimensional nucleating layer, two-dimentional retrieving layer, intrinsic gallium nitride layer, n type semiconductor layer, active layer and p type semiconductor layer, buffer layer, three-dimensional nucleating layer, two-dimentional retrieving layer, intrinsic gallium nitride layer, n type semiconductor layer, active layer and p type semiconductor layer stack gradually on substrate, three-dimensional nucleating layer includes at least one laminated construction, and laminated construction includes the scandium nitride aluminium layer of gallium nitride layer and setting on that gallium nitride layer.The present invention is formed together three-dimensional nucleating layer by using scandium nitride aluminium layer and gallium nitride layer, scandium nitride aluminium layer and gallium nitride layer cooperation, the stress and defect that lattice mismatch generates between sapphire and gallium nitride can be effectively relieved, optimize the crystal quality of epitaxial wafer bottom significantly, and then improve the crystal quality of active layer, be conducive to electrons and holes and carry out recombination luminescence, improves the internal quantum efficiency of LED.
Description
Technical field
The present invention relates to technical field of semiconductors, in particular to a kind of gallium nitride based LED epitaxial slice and its production
Method.
Background technique
Light emitting diode (English: Light Emitting Diode, referred to as: LED) it is a kind of semi-conductor electricity that can be luminous
Subcomponent.LED has many advantages, such as energy conservation and environmental protection, high reliablity, long service life, thus is widely paid close attention to, and exists in recent years
Backlight and field of display screen yield unusually brilliant results, and start to march to domestic lighting market.
Gallium nitride (GaN) has good thermal conductivity, while having the good characteristics such as high temperature resistant, acid and alkali-resistance, high rigidity,
Gallium nitride (GaN) base LED is set to receive more and more attention and study.Existing GaN-based LED epitaxial wafer includes substrate, delays
Rush layer, three-dimensional nucleating layer, two-dimentional retrieving layer, intrinsic gallium nitride layer, n type semiconductor layer, active layer and p type semiconductor layer, buffering
Layer, three-dimensional nucleating layer, two-dimentional retrieving layer, intrinsic gallium nitride layer, n type semiconductor layer, active layer and p type semiconductor layer stack gradually
On substrate.P type semiconductor layer is used to provide the hole for carrying out recombination luminescence, and n type semiconductor layer carries out compound hair for providing
The electronics of light, the radiation recombination that active layer is used to carry out electrons and holes shine, and substrate is used to provide growth table for epitaxial material
Face；The material of substrate generally selects sapphire, and the isostructural material of n type semiconductor layer generally selects gallium nitride, sapphire and nitrogen
Change gallium is dissimilar materials, there is biggish lattice mismatch between the two, buffer layer, three-dimensional nucleating layer, two-dimentional retrieving layer and intrinsic
Gallium nitride layer is used to alleviate the lattice mismatch between substrate and n type semiconductor layer.
In the implementation of the present invention, the inventor finds that the existing technology has at least the following problems:
Buffer layer, three-dimensional nucleating layer, two-dimentional retrieving layer and intrinsic gallium nitride layer material be all made of gallium nitride, to substrate and
Stress and the defect effect that lattice mismatch generates between n type semiconductor layer are limited, and lattice mismatch produces between sapphire and gallium nitride
Raw stress and defect can extend and be accumulated with epitaxial growth, and the stress and defect accumulated when extending to active layer are
Through that can cause adverse effect to the recombination luminescence of electrons and holes, cause the internal quantum efficiency of LED lower, finally than more serious
The luminous efficiency for reducing LED, influences application of the LED on domestic lighting.
Summary of the invention
The embodiment of the invention provides a kind of gallium nitride based LED epitaxial slice and preparation method thereof, it is able to solve existing
Having the stress and defect that lattice mismatch generates between technology sapphire and gallium nitride to extend to active layer reduces the luminous efficiency of LED
The problem of.The technical solution is as follows:
On the one hand, the embodiment of the invention provides a kind of gallium nitride based LED epitaxial slice, the gallium nitride base hairs
Optical diode epitaxial wafer include substrate, buffer layer, three-dimensional nucleating layer, two-dimentional retrieving layer, intrinsic gallium nitride layer, n type semiconductor layer,
Active layer and p type semiconductor layer, the buffer layer, the three-dimensional nucleating layer, the two-dimentional retrieving layer, the intrinsic gallium nitride
Layer, the n type semiconductor layer, the active layer and the p type semiconductor layer stack gradually over the substrate, it is described it is three-dimensional at
Stratum nucleare includes at least one laminated construction, and the laminated construction includes gallium nitride layer and the nitridation that is arranged on the gallium nitride layer
Scandium aluminium layer.
Optionally, the scandium nitride aluminium layer is ScbAl1-bN layers, 0.15 < b < 0.65.
Optionally, the laminated construction with a thickness of 50nm~500nm.
Preferably, the gallium nitride layer with a thickness of the scandium nitride aluminium layer with a thickness of 2 times~15 times.
Optionally, the quantity of the laminated construction is M a, and 1≤M≤5 and M are integer.
Preferably, the buffer layer with a thickness of 250nm~500nm.
On the other hand, the embodiment of the invention provides a kind of production method of gallium nitride based LED epitaxial slice, institutes
Stating production method includes:
One substrate is provided；
Successively grown buffer layer, three-dimensional nucleating layer, two-dimentional retrieving layer, intrinsic gallium nitride layer, N-type are partly led over the substrate
Body layer, active layer and p type semiconductor layer；
Wherein, the three-dimensional nucleating layer includes at least one laminated construction, and the laminated construction includes gallium nitride layer and sets
Set the scandium nitride aluminium layer on the gallium nitride layer.
Optionally, the growth conditions of the scandium nitride aluminium layer is identical as the growth conditions of the gallium nitride layer, the growth
Condition includes growth temperature and growth pressure.
Preferably, the growth temperature of the three-dimensional nucleating layer is 1000 DEG C~1040 DEG C.
It is highly preferred that the growth pressure of the three-dimensional nucleating layer is 400torr~600torr.
Technical solution provided in an embodiment of the present invention has the benefit that
It is formed together three-dimensional nucleating layer by using scandium nitride aluminium layer and gallium nitride layer, scandium nitride aluminium layer and gallium nitride layer are matched
It closes, the stress and defect that lattice mismatch generates between sapphire and gallium nitride, significantly optimization epitaxial wafer bottom can be effectively relieved
Crystal quality, and then improve active layer crystal quality, be conducive to electrons and holes and carry out recombination luminescence in active layer, mention
The internal quantum efficiency of high LED, the final luminous efficiency for improving LED promote application of the LED on domestic lighting.
Detailed description of the invention
To describe the technical solutions in the embodiments of the present invention more clearly, make required in being described below to embodiment
Attached drawing is briefly described, it should be apparent that, drawings in the following description are only some embodiments of the invention, for
For those of ordinary skill in the art, without creative efforts, it can also be obtained according to these attached drawings other
Attached drawing.
Fig. 1 is a kind of structural schematic diagram of gallium nitride based LED epitaxial slice provided in an embodiment of the present invention；
Fig. 2 is the structural schematic diagram of three-dimensional nucleating layer provided in an embodiment of the present invention；
Fig. 3 is a kind of process of the production method of gallium nitride based LED epitaxial slice provided in an embodiment of the present invention
Figure.
Specific embodiment
To make the object, technical solutions and advantages of the present invention clearer, below in conjunction with attached drawing to embodiment party of the present invention
Formula is described in further detail.
The embodiment of the invention provides a kind of gallium nitride based LED epitaxial slice, Fig. 1 provides for the embodiment of the present invention
A kind of gallium nitride based LED epitaxial slice structural schematic diagram, referring to Fig. 1, the gallium nitride based LED epitaxial slice
Including substrate 10, buffer layer 20, n type semiconductor layer 30, active layer 40 and p type semiconductor layer 50, buffer layer 20, N-type semiconductor
Layer 30, active layer 40 and p type semiconductor layer 50 are sequentially laminated on substrate 10.
In the present embodiment, which further includes three-dimensional nucleating layer 60, two-dimentional retrieving layer
70 and intrinsic gallium nitride layer 80, three-dimensional nucleating layer 60, two-dimentional retrieving layer 70 and intrinsic gallium nitride layer 80 are sequentially laminated on buffer layer
Between 20 and n type semiconductor layer 30.
In specific implementation, buffer layer is the gallium nitride of the layer of low-temperature epitaxy on substrate first, therefore also referred to as
For low temperature buffer layer.The longitudinal growth for carrying out semiconductor material in low temperature buffer layer again, will form multiple mutually independent three-dimensionals
Island structure, referred to as three-dimensional nucleating layer；Then half is carried out between each three-dimensional island structure on all three-dimensional island structures
The cross growth of conductor material forms two-dimension plane structure, referred to as two-dimentional retrieving layer；The finally high growth temperature on two-dimensional growth layer
One layer of thicker gallium nitride, referred to as intrinsic gallium nitride layer.
Fig. 2 is the structural schematic diagram of three-dimensional nucleating layer provided in an embodiment of the present invention, and referring to fig. 2, three-dimensional nucleating layer 60 can
To include at least one laminated construction 600, laminated construction 600 includes gallium nitride layer 61 and the nitridation that is arranged on gallium nitride layer 61
Scandium aluminium layer 62.
The embodiment of the present invention is formed together three-dimensional nucleating layer, scandium nitride aluminium layer by using scandium nitride aluminium layer and gallium nitride layer
Cooperate with gallium nitride layer, the stress and defect that lattice mismatch generates between sapphire and gallium nitride can be effectively relieved, it is significantly excellent
Change epitaxial wafer bottom crystal quality, and then improve active layer crystal quality, be conducive to electrons and holes in active layer into
Row recombination luminescence improves the internal quantum efficiency of LED, and the final luminous efficiency for improving LED promotes LED answering on domestic lighting
With.
Optionally, scandium nitride aluminium layer 62 can be ScbAl1-bN layers, 0.15 < b < 0.65, b is preferably 0.4, so that nitridation
Scandium aluminium layer can realize preferable cooperation with gallium nitride layer, effectively promote the crystal quality of epitaxial wafer bottom.
Optionally, the thickness of laminated construction 600 can be 50nm~500nm, preferably 200nm, make scandium nitride aluminium layer and
The fiting effect of gallium nitride layer is preferable, effectively promotes the crystal quality of epitaxial wafer bottom.
Preferably, gallium nitride layer 61 with a thickness of scandium nitride aluminium layer 62 with a thickness of 2 times~15 times, preferably 8 times.One side
The thickness of surface gallium nitride layer is larger, integrally remains gallium nitride, and the crystal quality of epitaxial wafer entirety is preferable, is conducive to improve
The luminous efficiency of LED；The thickness of another aspect scandium nitride aluminium layer differs in a certain range with the thickness of gallium nitride layer, scandium nitride
Aluminium layer can preferably cooperate with gallium nitride layer, effectively promote the crystal quality of epitaxial wafer bottom.
Optionally, the quantity of laminated construction 600 can be M, 1≤M≤5 and M is integer, and M is preferably 3.Effectively mentioning
In the case where high epitaxial wafer bottom crystal quality, quantity (the i.e. scandium nitride aluminium of each sublayer in three-dimensional nucleating layer is reduced as far as possible
The quantity of layer and gallium nitride layer), simplify and realize, facilitates production.
Preferably, the thickness of three-dimensional nucleating layer 60 can be 250nm~500nm, preferably 400nm.It avoids changing as far as possible
The thickness of buffer layer reduces the influence to epitaxial wafer entirety.
Specifically, the material of substrate 10 can use sapphire (main component Al2O3), it is preferred to use [0001] crystal orientation
Sapphire.The material of n type semiconductor layer 30 can use the gallium nitride of n-type doping.Active layer 40 may include multiple quantum
Trap and multiple quantum are built, and multiple Quantum Well and multiple quantum build alternately laminated setting；The material of Quantum Well can use indium nitride
Gallium (InGaN), the material that quantum is built can use gallium nitride.The material of p type semiconductor layer 50 can be using the nitridation of p-type doping
Gallium.The material of two-dimentional retrieving layer 70 can be gallium nitride.
Further, the thickness of n type semiconductor layer 30 can be 1 μm~3 μm, preferably 1.5 μm；N type semiconductor layer 30
The doping concentration of middle N type dopant can be 1018cm-3~3*1019cm-3, preferably 6*1018cm-3.The thickness of Quantum Well can be with
For 3nm~4nm, preferably 3.5nm；The thickness that quantum is built can be 9nm~15nm, preferably 12nm；The quantity of Quantum Well with
The quantity that quantum is built is identical, and the quantity that quantum is built can be 5~11, preferably 8.The thickness of p type semiconductor layer 50 can
Think 100nm~300nm, preferably 200nm；The doping concentration of P-type dopant can be 10 in p type semiconductor layer 5018/cm3
~1020/cm3, preferably 1019/cm3.The thickness of two-dimentional retrieving layer 70 can be 500nm~800nm, preferably 650nm.It is intrinsic
The thickness of gallium nitride layer 80 can be 1 μm~2 μm, preferably 1.5 μm.
Optionally, it as shown in Figure 1, the gallium nitride based LED epitaxial slice can also include stress release layer 91, answers
Power releasing layer 91 is arranged between n type semiconductor layer 30 and active layer 40, to produce to lattice mismatch between sapphire and gallium nitride
Raw stress is discharged, and the crystal quality of active layer is improved, and is conducive to electrons and holes in active layer and is carried out radiation recombination hair
Light improves the internal quantum efficiency of LED, and then improves the luminous efficiency of LED.
Specifically, stress release layer 91 may include multiple gallium indium nitride layers and multiple gallium nitride layers, multiple InGaNs
Layer and the alternately laminated setting of multiple gallium nitride layers.
Further, the thickness of gallium indium nitride layer can be 1nm~3nm, preferably 2nm in stress release layer 91；Stress
The thickness of gallium nitride layer can be 20nm~40nm, preferably 30nm in releasing layer 91；Gallium indium nitride layer in stress release layer 91
Quantity it is identical as the quantity of gallium nitride layer, the quantity of gallium nitride layer can be 5~11, preferably 8.
Optionally, as shown in Figure 1, the gallium nitride based LED epitaxial slice can also include electronic barrier layer 92, electricity
Sub- barrier layer 92 is arranged between active layer 40 and p type semiconductor layer 50, to avoid electron transition into p type semiconductor layer with sky
Cave carries out non-radiative recombination, reduces the luminous efficiency of LED.
Specifically, the material of electronic barrier layer 92 can be using the aluminium gallium nitride alloy (AlGaN) of p-type doping, such as AlyGa1-yN,
0.1 < y < 0.5.
Further, the thickness of electronic barrier layer 92 can be 50nm~100nm, preferably 75nm.
Preferably, as shown in Figure 1, the gallium nitride based LED epitaxial slice can also include low temperature P-type layer 93, low temperature
P-type layer 93 is arranged between active layer 40 and electronic barrier layer 92, has caused to avoid the higher growth temperature of electronic barrier layer
Phosphide atom in active layer is precipitated, and influences the luminous efficiency of light emitting diode.
Specifically, the material of low temperature P-type layer 93 can be the gallium nitride of p-type doping.
Further, the thickness of low temperature P-type layer 93 can be 30nm~50nm, preferably 40nm；P in low temperature P-type layer 93
The doping concentration of type dopant can be 1020/cm3~1021/cm3, preferably 5*1020/cm3。
Optionally, as shown in Figure 1, the LED epitaxial slice can also include p-type contact layer 94, p-type contact layer 94
It is laid on p type semiconductor layer 50, to form Europe between the electrode or transparent conductive film that are formed in chip fabrication technique
Nurse contact.
Specifically, the material of p-type contact layer 94 can be using the InGaN of p-type doping.
Further, the thickness of p-type contact layer 94 can be 5nm~100nm, preferably 50nm；P in p-type contact layer 94
The doping concentration of type dopant can be 1021/cm3~1022/cm3, preferably 6*1021/cm3。
A kind of specific implementation of gallium nitride based LED epitaxial slice shown in FIG. 1 include: substrate 10, buffer layer 20,
Three-dimensional nucleating layer 60, two-dimentional retrieving layer 70, intrinsic gallium nitride layer 80, n type semiconductor layer 30, active layer 40 and p type semiconductor layer
50, buffer layer 20, three-dimensional nucleating layer 60, two-dimentional retrieving layer 70, intrinsic gallium nitride layer 80, n type semiconductor layer 30,40 and of active layer
P type semiconductor layer 50 is sequentially laminated on substrate 10.Wherein, the material of substrate 10 uses sapphire；The material of buffer layer 20 is adopted
With gallium nitride, with a thickness of 25nm；Three-dimensional nucleating layer 60 includes 5 laminated construction 200, and laminated construction 200 includes stacking gradually
Sc0.65Al0.35N layers and GaN layer, Sc0.65Al0.35N layers with a thickness of 30nm, GaN layer with a thickness of 60nm；Two-dimentional retrieving layer 70
Material be gallium nitride, with a thickness of 650nm；Intrinsic gallium nitride layer 80 with a thickness of 1.5 μm；The material of n type semiconductor layer 30 is adopted
With the gallium nitride of n-type doping, with a thickness of 1.5 μm, the doping concentration of N type dopant is 1019cm-3；Active layer 40 includes alternating layer
Folded 8 Quantum Well and 8 quantum are built, the material of Quantum Well is InGaN, and Quantum Well is built with a thickness of 3.5nm, quantum
Material is gallium nitride, quantum build with a thickness of 12nm；The material of p type semiconductor layer 50 uses the gallium nitride of p-type doping, with a thickness of
200nm, the doping concentration of P-type dopant are 1019cm-3。
Chip is made in above-mentioned epitaxial wafer, is made of with three-dimensional nucleating layer the GaN with a thickness of 500nm and other layers of structure phase
With epitaxial wafer made of compared with chip, luminous efficiency improves 3%~5%.
A kind of specific implementation of gallium nitride based LED epitaxial slice shown in FIG. 1 include: substrate 10, buffer layer 20,
Three-dimensional nucleating layer 60, two-dimentional retrieving layer 70, intrinsic gallium nitride layer 80, n type semiconductor layer 30, active layer 40 and p type semiconductor layer
50, buffer layer 20, three-dimensional nucleating layer 60, two-dimentional retrieving layer 70, intrinsic gallium nitride layer 80, n type semiconductor layer 30,40 and of active layer
P type semiconductor layer 50 is sequentially laminated on substrate 10.Wherein, the material of substrate 10 uses sapphire；The material of buffer layer 20 is adopted
With gallium nitride, with a thickness of 25nm；Three-dimensional nucleating layer 60 includes 3 laminated construction 200, and laminated construction 200 includes stacking gradually
Sc0.4Al0.6N layers and GaN layer, Sc0.4Al0.6N layers with a thickness of 20nm, GaN layer with a thickness of 160nm；Two-dimentional retrieving layer 70
Material is gallium nitride, with a thickness of 650nm；Intrinsic gallium nitride layer 80 with a thickness of 1.5 μm；The material of n type semiconductor layer 30 uses N
The gallium nitride of type doping, with a thickness of 1.5 μm, the doping concentration of N type dopant is 1019cm-3；Active layer 40 includes alternately laminated
8 Quantum Well and 8 quantum build, the material of Quantum Well is InGaN, the material of Quantum Well built with a thickness of 3.5nm, quantum
Material be gallium nitride, quantum build with a thickness of 12nm；The material of p type semiconductor layer 50 uses the gallium nitride of p-type doping, with a thickness of
200nm, the doping concentration of P-type dopant are 1019cm-3。
Chip is made in above-mentioned epitaxial wafer, is made of with three-dimensional nucleating layer the GaN with a thickness of 500nm and other layers of structure phase
With epitaxial wafer made of compared with chip, luminous efficiency improves 2%~3%.
A kind of specific implementation of gallium nitride based LED epitaxial slice shown in FIG. 1 include: substrate 10, buffer layer 20,
Three-dimensional nucleating layer 60, two-dimentional retrieving layer 70, intrinsic gallium nitride layer 80, n type semiconductor layer 30, active layer 40 and p type semiconductor layer
50, buffer layer 20, three-dimensional nucleating layer 60, two-dimentional retrieving layer 70, intrinsic gallium nitride layer 80, n type semiconductor layer 30,40 and of active layer
P type semiconductor layer 50 is sequentially laminated on substrate 10.Wherein, the material of substrate 10 uses sapphire；The material of buffer layer 20 is adopted
With gallium nitride, with a thickness of 25nm；Three-dimensional nucleating layer 60 includes 1 laminated construction 200, and laminated construction 200 includes stacking gradually
Sc0.15Al0.85N layers and GaN layer, Sc0.15Al0.85N layers with a thickness of 100nm, GaN layer with a thickness of 150nm；Two-dimentional retrieving layer
70 material is gallium nitride, with a thickness of 650nm；Intrinsic gallium nitride layer 80 with a thickness of 1.5 μm；The material of n type semiconductor layer 30
Using the gallium nitride of n-type doping, with a thickness of 1.5 μm, the doping concentration of N type dopant is 1019cm-3；Active layer 40 includes alternating
8 Quantum Well of stacking and 8 quantum are built, and the material of Quantum Well is InGaN, Quantum Well with a thickness of 3.5nm, quantum is built
Material be gallium nitride, quantum build with a thickness of 12nm；The material of p type semiconductor layer 50 uses the gallium nitride of p-type doping, thickness
For 200nm, the doping concentration of P-type dopant is 1019cm-3。
Chip is made in above-mentioned epitaxial wafer, is made of with three-dimensional nucleating layer the GaN with a thickness of 500nm and other layers of structure phase
With epitaxial wafer made of compared with chip, luminous efficiency improves 1%~2%.
The embodiment of the invention provides a kind of production methods of gallium nitride based LED epitaxial slice, are suitable for production figure
Gallium nitride based LED epitaxial slice shown in 1.Fig. 3 is a kind of gallium nitride based light emitting diode provided in an embodiment of the present invention
The flow chart of the production method of epitaxial wafer, referring to Fig. 3, which includes:
Step 201: a substrate is provided.
Optionally, which may include:
Controlled at 1000 DEG C~1200 DEG C (preferably 1100 DEG C), in hydrogen atmosphere to substrate carry out 1 minute~
It makes annealing treatment within 10 minutes (preferably 8 minutes)；
Nitrogen treatment is carried out to substrate.
The surface for cleaning substrate through the above steps avoids being conducive to the life for improving epitaxial wafer in impurity incorporation epitaxial wafer
Long quality.
Step 202: successively grown buffer layer, three-dimensional nucleating layer, two-dimentional retrieving layer, intrinsic gallium nitride layer, N-type on substrate
Semiconductor layer, active layer and p type semiconductor layer.
In the present embodiment, three-dimensional nucleating layer includes at least one laminated construction, and laminated construction includes gallium nitride layer and sets
Set scandium nitride aluminium layer on that gallium nitride layer.
Optionally, the growth conditions of scandium nitride aluminium layer can be identical as the growth conditions of gallium nitride layer, and growth conditions includes
Growth temperature and growth pressure.It is fairly simple in realization and conveniently using identical growth conditions.
Preferably, the growth temperature of three-dimensional nucleating layer can be 1000 DEG C~1040 DEG C (preferably 1020 DEG C).Growth temperature
Degree is higher, and the crystal quality of three-dimensional nucleating layer is preferable, is conducive to the luminous efficiency for improving LED.
It is highly preferred that the growth pressure of three-dimensional nucleating layer can be 400torr~600torr r (preferably 500torr).
Cooperate the growth temperature of three-dimensional nucleating layer, the crystal quality of three-dimensional nucleating layer is preferable, is conducive to the luminous efficiency for improving LED.
Specifically, which may include:
The first step, controlled at 400 DEG C~600 DEG C (preferably 500 DEG C), pressure is that 400torr~600torr is (excellent
It is selected as 500torr), grown buffer layer on substrate；
Second step, controlled at 1000 DEG C~1040 DEG C (preferably 1020 DEG C), pressure is 400torr~600torr
(preferably 500torr), on the buffer layer growing three-dimensional nucleating layer；
Third step, controlled at 1040 DEG C~1080 DEG C (preferably 1060 DEG C), pressure is 400torr~600torr
(preferably 500torr) grows two-dimentional retrieving layer in three-dimensional nucleation；
4th step, controlled at 1050 DEG C~1100 DEG C (preferably 1050 DEG C), pressure is 100torr~500torr
(preferably 300torr) grows intrinsic gallium nitride layer in two-dimentional retrieving layer；
5th step, controlled at 1000 DEG C~1100 DEG C (preferably 1050 DEG C), pressure is 100torr~500torr
(preferably 300torr), grows n type semiconductor layer on the buffer layer；
6th step, grows active layer on n type semiconductor layer；Wherein, the growth temperature of Quantum Well is 720 DEG C~800 DEG C
(preferably 760 DEG C), pressure are 100torr~500torr (preferably 300torr)；Quantum build growth temperature be 900 DEG C~
950 DEG C (preferably 925 DEG C), pressure is 100torr~500torr (preferably 300torr)；
7th step, controlled at 850 DEG C~950 DEG C (preferably 900 DEG C), pressure is that 100torr~300torr is (excellent
It is selected as 200torr), the growing P-type semiconductor layer on active layer.
Optionally, after the first step, which can also include:
Controlled at 1000 DEG C~1200 DEG C (preferably 1100 DEG C), pressure be 400torr~600torr (preferably
500torr), the in-situ annealing carried out 5 minutes~10 minutes (preferably 8 minutes) to buffer layer is handled.
Optionally, before the 6th step, which can also include:
The growth stress releasing layer on n type semiconductor layer.
Correspondingly, active layer is grown on stress release layer.
Specifically, the growth stress releasing layer on n type semiconductor layer may include:
Controlled at 800 DEG C~1100 DEG C (preferably 950 DEG C), pressure be 100torr~500torr (preferably
300torr), the growth stress releasing layer on n type semiconductor layer.
Optionally, before the 7th step, which can also include:
Electronic barrier layer is grown on active layer.
Correspondingly, p type semiconductor layer is grown on electronic barrier layer.
Specifically, electronic barrier layer is grown on active layer, may include:
Controlled at 900 DEG C~1000 DEG C (preferably 950 DEG C), pressure be 200torr~500torr (preferably
350torr), electronic barrier layer is grown on active layer.
Preferably, before growing electronic barrier layer on active layer, which can also include:
The growing low temperature P-type layer on active layer.
Correspondingly, electronic barrier layer is grown in low temperature P-type layer.
Specifically, the growing low temperature P-type layer on active layer may include:
Controlled at 750 DEG C~850 DEG C (preferably 800 DEG C), pressure be 100torr~500torr (preferably
300torr), the growing low temperature P-type layer on active layer.
Optionally, after the 7th step, which can also include:
The growing P-type contact layer on p type semiconductor layer.
Specifically, the growing P-type contact layer on p type semiconductor layer may include:
Controlled at 850 DEG C~1000 DEG C (preferably 925 DEG C), pressure be 100torr~300torr (preferably
200torr), the growing P-type contact layer on p type semiconductor layer.
It should be noted that after above-mentioned epitaxial growth terminates, can first by temperature be reduced to 650 DEG C~850 DEG C (preferably
It is 750 DEG C), the annealing of 5 minutes~15 minutes (preferably 10 minutes) is carried out to epitaxial wafer in nitrogen atmosphere, then again
The temperature of epitaxial wafer is reduced to room temperature.
Control temperature, pressure each mean temperature, pressure in the reaction chamber of control growth epitaxial wafer, and specially metal is organic
Compound chemical gaseous phase deposition (English: Metal-organic Chemical Vapor Deposition, referred to as: MOCVD) set
Standby reaction chamber.Using trimethyl gallium or triethyl-gallium as gallium source when realization, high-purity ammonia is as nitrogen source, and trimethyl indium is as indium
Source, trimethyl aluminium is as silicon source, and for scandium phosphino- arbine complex as scandium source, N type dopant selects silane, and P-type dopant is selected
Two luxuriant magnesium.
The foregoing is merely presently preferred embodiments of the present invention, is not intended to limit the invention, it is all in spirit of the invention and
Within principle, any modification, equivalent replacement, improvement and so on be should all be included in the protection scope of the present invention.
Claims (10)
1. a kind of gallium nitride based LED epitaxial slice, the gallium nitride based LED epitaxial slice includes substrate, buffering
Layer, three-dimensional nucleating layer, two-dimentional retrieving layer, intrinsic gallium nitride layer, n type semiconductor layer, active layer and p type semiconductor layer, it is described slow
Rush layer, the three-dimensional nucleating layer, the two-dimentional retrieving layer, the intrinsic gallium nitride layer, the n type semiconductor layer, described active
Layer and the p type semiconductor layer stack gradually over the substrate, which is characterized in that the three-dimensional nucleating layer includes at least one
Laminated construction, the laminated construction include gallium nitride layer and the scandium nitride aluminium layer that is arranged on the gallium nitride layer.
2. gallium nitride based LED epitaxial slice according to claim 1, which is characterized in that the scandium nitride aluminium layer is
ScbAl1-bN layers, 0.15 < b < 0.65.
3. gallium nitride based LED epitaxial slice according to claim 1 or 2, which is characterized in that the laminated construction
With a thickness of 50nm~500nm.
4. gallium nitride based LED epitaxial slice according to claim 3, which is characterized in that the thickness of the gallium nitride layer
Degree is the scandium nitride aluminium layer with a thickness of 2 times~15 times.
5. gallium nitride based LED epitaxial slice according to claim 1 or 2, which is characterized in that the laminated construction
Quantity be M, 1≤M≤5 and M are integer.
6. gallium nitride based LED epitaxial slice according to claim 5, which is characterized in that the thickness of the buffer layer
For 250nm~500nm.
7. a kind of production method of gallium nitride based LED epitaxial slice, which is characterized in that the production method includes:
One substrate is provided；
Successively grown buffer layer, three-dimensional nucleating layer, two-dimentional retrieving layer, intrinsic gallium nitride layer, N-type semiconductor over the substrate
Layer, active layer and p type semiconductor layer；
Wherein, the three-dimensional nucleating layer includes at least one laminated construction, and the laminated construction includes that gallium nitride layer and setting exist
Scandium nitride aluminium layer on the gallium nitride layer.
8. production method according to claim 7, which is characterized in that the growth conditions and the nitrogen of the scandium nitride aluminium layer
The growth conditions for changing gallium layer is identical, and the growth conditions includes growth temperature and growth pressure.
9. production method according to claim 8, which is characterized in that the growth temperature of the three-dimensional nucleating layer is 1000 DEG C
~1040 DEG C.
10. manufacturing method according to claim 9, which is characterized in that it is described three-dimensional nucleating layer growth pressure be
400torr~600torr.
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| CN110061104A (en) * | 2019-02-28 | 2019-07-26 | 华灿光电(苏州）有限公司 | The manufacturing method of gallium nitride based LED epitaxial slice |
| CN112687777A (en) * | 2020-12-18 | 2021-04-20 | 华灿光电(苏州）有限公司 | Light emitting diode epitaxial wafer and preparation method thereof |
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| CN109830580A (en) * | 2019-01-29 | 2019-05-31 | 华灿光电（浙江）有限公司 | Gallium nitride based LED epitaxial slice and its manufacturing method |
| CN109830580B (en) * | 2019-01-29 | 2021-10-08 | 华灿光电（浙江）有限公司 | Gallium nitride-based light emitting diode epitaxial wafer and manufacturing method thereof |
| CN110061104A (en) * | 2019-02-28 | 2019-07-26 | 华灿光电(苏州）有限公司 | The manufacturing method of gallium nitride based LED epitaxial slice |
| CN110061104B (en) * | 2019-02-28 | 2020-08-14 | 华灿光电(苏州）有限公司 | Method for manufacturing gallium nitride-based light emitting diode epitaxial wafer |
| CN112687777A (en) * | 2020-12-18 | 2021-04-20 | 华灿光电(苏州）有限公司 | Light emitting diode epitaxial wafer and preparation method thereof |
| CN112687777B (en) * | 2020-12-18 | 2021-12-03 | 华灿光电(苏州）有限公司 | Light emitting diode epitaxial wafer and preparation method thereof |
| CN115360273A (en) * | 2022-06-22 | 2022-11-18 | 淮安澳洋顺昌光电技术有限公司 | Nitride semiconductor light-emitting element and manufacturing method thereof |
| CN115360273B (en) * | 2022-06-22 | 2023-10-20 | 淮安澳洋顺昌光电技术有限公司 | Nitride semiconductor light-emitting element and manufacturing method thereof |
| CN116314510A (en) * | 2023-05-23 | 2023-06-23 | 江西兆驰半导体有限公司 | Composite undoped AlGaN layer, preparation method, epitaxial wafer and LED |
| CN116314510B (en) * | 2023-05-23 | 2023-08-15 | 江西兆驰半导体有限公司 | Composite undoped AlGaN layer, preparation method, epitaxial wafer and LED |
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