CN109256445A - A kind of gallium nitride based LED epitaxial slice and preparation method thereof - Google Patents
A kind of gallium nitride based LED epitaxial slice and preparation method thereof Download PDFInfo
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- CN109256445A CN109256445A CN201810825977.5A CN201810825977A CN109256445A CN 109256445 A CN109256445 A CN 109256445A CN 201810825977 A CN201810825977 A CN 201810825977A CN 109256445 A CN109256445 A CN 109256445A
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- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
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Abstract
The invention discloses a kind of gallium nitride based LED epitaxial slices and preparation method thereof, belong to technical field of semiconductors.Epitaxial wafer includes substrate, buffer layer, n type semiconductor layer, active layer and p type semiconductor layer, the buffer layer, the n type semiconductor layer, the active layer and the p type semiconductor layer stack gradually over the substrate, the p type semiconductor layer includes the gallium nitride layer of M undoped scandium nitride aluminium layers and (M+1) a p-type doping, the M scandium nitride aluminium layers and (M+1) a described alternately laminated setting of gallium nitride layer, M is positive integer.The present invention in the gallium nitride layer that p-type is adulterated by being inserted at least one undoped scandium nitride aluminium layer, there are stronger two-dimensional hole gas for the interface of scandium nitride aluminium layer and gallium nitride layer, the ability extending transversely in hole in p type semiconductor layer can effectively be promoted, reduce the series resistance of LED, and then the forward voltage of LED is reduced, be conducive to application of the LED on domestic lighting.
Description
Technical field
The present invention relates to technical field of semiconductors, in particular to a kind of gallium nitride based LED epitaxial slice and its production
Method.
Background technique
Light emitting diode (English: Light Emitting Diode, referred to as: LED) it is a kind of semi-conductor electricity that can be luminous
Subcomponent.LED has many advantages, such as energy conservation and environmental protection, high reliablity, long service life, thus is widely paid close attention to, and exists in recent years
Backlight and field of display screen yield unusually brilliant results, and start to march to domestic lighting market.For domestic lighting, power saving and
Durable is two important judgment criteria, therefore reduces the series resistance of LED and improve the antistatic effect of LED and seem and especially close
Key.
Gallium nitride (GaN) has good thermal conductivity, while having the good characteristics such as high temperature resistant, acid and alkali-resistance, high rigidity,
Gallium nitride (GaN) base LED is set to receive more and more attention and study.Existing GaN-based LED epitaxial wafer includes substrate, delays
Rush layer, n type semiconductor layer, active layer and p type semiconductor layer, buffer layer, n type semiconductor layer, active layer and p type semiconductor layer according to
It is secondary to be layered on substrate.P type semiconductor layer is used to provide the hole for carrying out recombination luminescence, and n type semiconductor layer is for providing progress
The electronics of recombination luminescence, the radiation recombination that active layer is used to carry out electrons and holes shine, and substrate for epitaxial material for providing
Growing surface；The material of substrate generally selects sapphire, and the isostructural material of n type semiconductor layer generally selects gallium nitride, Lan Bao
Stone and gallium nitride are dissimilar materials, there is biggish lattice mismatch between the two, buffer layer is for alleviating substrate and N-type semiconductor
Lattice mismatch between layer.
In the implementation of the present invention, the inventor finds that the existing technology has at least the following problems:
Electrode can be arranged on the partial region of p type semiconductor layer in chip technology, pass through electrode injection P-type semiconductor
The electric current needs of layer carry out extending transversely in p type semiconductor layer.It is empty since the cavity volume that p type semiconductor layer provides is larger
The mobile comparison in cave is difficult, therefore electric current is extending transversely poor in p type semiconductor layer, and the series resistance of LED is larger, causes
The forward voltage of LED is higher, influences application of the LED on domestic lighting.
Summary of the invention
The embodiment of the invention provides a kind of gallium nitride based LED epitaxial slice and preparation method thereof, it is able to solve existing
There is technology electric current extending transversely poor in p type semiconductor layer, influences LED the application on domestic lighting the problem of.It is described
Technical solution is as follows:
On the one hand, the embodiment of the invention provides a kind of gallium nitride based LED epitaxial slice, the gallium nitride base hairs
Optical diode epitaxial wafer includes substrate, buffer layer, n type semiconductor layer, active layer and p type semiconductor layer, the buffer layer, described
N type semiconductor layer, the active layer and the p type semiconductor layer stack gradually over the substrate, the p type semiconductor layer packet
The gallium nitride layer of M undoped scandium nitride aluminium layers and (M+1) a p-type doping is included, the M scandium nitride aluminium layers and (M+1) are a
The alternately laminated setting of gallium nitride layer, M is positive integer.
Optionally, the scandium nitride aluminium layer is ScaAl1-aN layers, 0.2 < a < 0.7.
Optionally, the scandium nitride aluminium layer with a thickness of 1nm~5nm.
Preferably, the gallium nitride layer with a thickness of the scandium nitride aluminium layer with a thickness of 5 times~20 times.
Optionally, 2≤M≤10.
Preferably, the p type semiconductor layer with a thickness of 100nm~300nm.
Optionally, the doping concentration of P-type dopant is 10 in the gallium nitride layer18/cm3~1020/cm3。
On the other hand, the embodiment of the invention provides a kind of production method of gallium nitride based LED epitaxial slice, institutes
Stating production method includes:
One substrate is provided；
Successively grown buffer layer, n type semiconductor layer, active layer and p type semiconductor layer over the substrate；
Wherein, the p type semiconductor layer includes the gallium nitride of M undoped scandium nitride aluminium layers and (M+1) a p-type doping
Layer, the M scandium nitride aluminium layers and (M+1) a described alternately laminated setting of gallium nitride layer.
Optionally, the growth conditions of the scandium nitride aluminium layer is identical as the growth conditions of the gallium nitride layer, the growth
Condition includes growth temperature and growth pressure.
Preferably, the growth temperature of the p type semiconductor layer is 850 DEG C~950 DEG C, the growth of the p type semiconductor layer
Pressure is 100torr~300torr.
Technical solution provided in an embodiment of the present invention has the benefit that
By being inserted at least one undoped scandium nitride aluminium layer in the gallium nitride layer that p-type is adulterated, scandium nitride aluminium layer and
The interface of gallium nitride layer can effectively promote the extending transversely of hole in p type semiconductor layer there are stronger two-dimensional hole gas
Ability, the hole that the gallium nitride layer for adulterating p-type provides are uniformly injected into active layer, reduce the series resistance of LED, in turn
The forward voltage for reducing LED, is conducive to application of the LED on domestic lighting.
Detailed description of the invention
To describe the technical solutions in the embodiments of the present invention more clearly, make required in being described below to embodiment
Attached drawing is briefly described, it should be apparent that, drawings in the following description are only some embodiments of the invention, for
For those of ordinary skill in the art, without creative efforts, it can also be obtained according to these attached drawings other
Attached drawing.
Fig. 1 is a kind of structural schematic diagram of gallium nitride based LED epitaxial slice provided in an embodiment of the present invention；
Fig. 2 is the structural schematic diagram of p type semiconductor layer provided in an embodiment of the present invention；
Fig. 3 is a kind of process of the production method of gallium nitride based LED epitaxial slice provided in an embodiment of the present invention
Figure.
Specific embodiment
To make the object, technical solutions and advantages of the present invention clearer, below in conjunction with attached drawing to embodiment party of the present invention
Formula is described in further detail.
The embodiment of the invention provides a kind of gallium nitride based LED epitaxial slice, Fig. 1 provides for the embodiment of the present invention
A kind of gallium nitride based LED epitaxial slice structural schematic diagram, referring to Fig. 1, the gallium nitride based LED epitaxial slice
Including substrate 10, buffer layer 20, n type semiconductor layer 30, active layer 40 and p type semiconductor layer 50, buffer layer 20, N-type semiconductor
Layer 30, active layer 40 and p type semiconductor layer 50 are sequentially laminated on substrate 10.
Fig. 2 is the structural schematic diagram of p type semiconductor layer provided in an embodiment of the present invention, referring to fig. 2, in the present embodiment, P
Type semiconductor layer 50 includes the gallium nitride layer 52 of M undoped scandium nitride aluminium layers 51 and (M+1) a p-type doping, M scandium nitride
Aluminium layer 51 and the alternately laminated setting of (M+1) a gallium nitride layer 52, M is positive integer.
The embodiment of the present invention by being inserted at least one undoped scandium nitride aluminium layer in the gallium nitride layer that p-type is adulterated,
There are stronger two-dimensional hole gas for the interface of scandium nitride aluminium layer and gallium nitride layer, and it is hollow can effectively to promote p type semiconductor layer
The ability extending transversely in cave, the hole that the gallium nitride layer for adulterating p-type provides are uniformly injected into active layer, reduce LED's
Series resistance, and then the forward voltage of LED is reduced, be conducive to application of the LED on domestic lighting.And hole has been uniformly injected into
In active layer, the number of cavities for carrying out recombination luminescence in active layer with electronics can be increased, improve the internal quantum efficiency of LED, in turn
Promote the luminous efficiency of LED.In addition, the lattice of scandium nitride aluminium and the lattice comparison match of gallium nitride, can alleviate sapphire and
The stress and defect that lattice mismatch generates between gallium nitride, improve the lattice match inside epitaxial wafer, and optimization epitaxial wafer is whole
Crystal quality, be conducive to the recombination luminescence of electrons and holes in active layer, can be further improved the internal quantum efficiency of LED,
And then promote the luminous efficiency of LED.
Optionally, scandium nitride aluminium layer 51 can be ScaAl1-aN layers, 0.2 < a < 0.7, a is preferably 0.4, so that scandium nitride
Aluminium layer can realize preferable cooperation with gallium nitride layer, effectively promote the ability extending transversely in hole.
Optionally, the thickness of scandium nitride aluminium layer 51 can be 1nm~5nm, preferably 3nm.In the cross for effectively promoting hole
It while to extended capability, avoids integrally causing negatively influencing to epitaxial wafer as far as possible, such as increases the series resistance of epitaxial wafer.
Preferably, gallium nitride layer 52 with a thickness of scandium nitride aluminium layer 51 with a thickness of 5 times~20 times, preferably 12 times.One
The thickness of aspect gallium nitride layer is larger, integrally remains gallium nitride, can provide enough for the recombination luminescence in active layer
The hole of quantity；The thickness of another aspect scandium nitride aluminium layer differs in a certain range with the thickness of gallium nitride layer, scandium nitride aluminium
Layer can preferably cooperate with gallium nitride layer, effectively promote the ability extending transversely in hole, while avoid increasing the string of epitaxial wafer
Join resistance.
Optionally, 2≤M≤10, M are preferably 6.In the case where effectively promoting the ability extending transversely in hole, as far as possible
The quantity (i.e. the quantity of scandium nitride aluminium layer and gallium nitride layer) of each sublayer in p type semiconductor layer is reduced, simplifies and realizes, facilitate system
Make.
Preferably, p type semiconductor layer 50 with a thickness of 100nm~300nm, preferably 200nm.Do not increase p-type additionally
The thickness of semiconductor layer reduces the influence to epitaxial wafer entirety as far as possible.
Optionally, the doping concentration of P-type dopant is 10 in gallium nitride layer 5218/cm3~1020/cm3, preferably 1019/
cm3.On the one hand a certain number of holes can be provided, guarantee, which has in sufficient amount of hole injection active layer, carries out radiation recombination
It shines；On the other hand it avoids causing the luminous efficiency of LED negatively influencing, for example reduces the crystal quality etc. of epitaxial wafer entirety.
Specifically, the material of substrate 10 can use sapphire (main component Al2O3), it is preferred to use [0001] crystal orientation
Sapphire.The material of buffer layer 20 can use gallium nitride (GaN).Active layer 40 may include multiple Quantum Well and multiple amounts
Son is built, and multiple Quantum Well and multiple quantum build alternately laminated setting；The material of Quantum Well can use InGaN (InGaN),
Preferably InxGa1-xN, 0 < x < 1；The material that quantum is built can use gallium nitride.
Further, the thickness of buffer layer 20 can be 15nm~40nm, preferably 25nm.The thickness of Quantum Well can be
3nm~4nm, preferably 3.5nm；The thickness that quantum is built can be 9nm~15nm, preferably 12nm；The quantity and amount of Quantum Well
The quantity that son is built is identical, and the quantity that quantum is built can be 5~11, preferably 8.
In a kind of implementation of the present embodiment, n type semiconductor layer 30 may include L undoped scandium nitride aluminium layers
31 and (L+1) a n-type doping gallium nitride layer 32, L scandium nitride aluminium layer 31 with (L+1) a gallium nitride layer 32 is alternately laminated sets
It sets, L is positive integer.
By being inserted at least one undoped scandium nitride aluminium layer in the gallium nitride layer of n-type doping, scandium nitride aluminium layer and
There are stronger two-dimensional electron gas for the interface of gallium nitride layer, can effectively promote the ability extending transversely of electronics, not need again
Current extending is set and realizes uniformity and consistency that electronics is distributed in n type semiconductor layer, reduces the series electrical of epitaxial wafer
Resistance, reduces the forward voltage of chip.And the capability improving extending transversely of electronics, be conducive to the mobility for improving electronics, in turn
Improve the antistatic breakdown capability of light emitting diode.
Optionally, scandium nitride aluminium layer can be Sc in n type semiconductor layer 30bAl1-bN layers, 0 < b < 0.6, b are preferably
0.3, so that scandium nitride aluminium layer can realize preferable cooperation with gallium nitride layer, effectively promote the ability extending transversely of electronics.
Optionally, the thickness of gallium nitride layer can be 5 times~the 20 of the thickness of scandium nitride aluminium layer in n type semiconductor layer 30
Times, preferably 12 times.The thickness of one side gallium nitride layer is larger, can integrally remain gallium nitride, while being active layer
In recombination luminescence sufficient amount of electronics is provided；The thickness of another aspect scandium nitride aluminium layer is differed with the thickness of gallium nitride layer
In a certain range, scandium nitride aluminium layer can preferably cooperate with gallium nitride layer, effectively promote the ability extending transversely of electronics, simultaneously
Avoid increasing the series resistance of epitaxial wafer.
Optionally, the thickness of n type semiconductor layer 30 can be 0.5 μm~5 μm, preferably 3 μm.Do not increase N-type partly to lead
The thickness of body layer avoids the series resistance for increasing epitaxial wafer.
Further, 10≤L≤30, L are preferably 20.In the case where effectively promoting the ability extending transversely of electronics, to the greatest extent
It is likely to reduced the quantity (i.e. the quantity of scandium nitride aluminium layer and gallium nitride layer) of each sublayer in n type semiconductor layer, simplifies and realizes, side
Just it makes.
Further, the sum of the thickness of a scandium nitride aluminium layer and a gallium nitride layer is in n type semiconductor layer 30
20nm~250nm, preferably 140nm make n type semiconductor layer entirety to cooperate the quantity of scandium nitride aluminium layer and gallium nitride layer
Thickness is in suitable range.
Optionally, the doping concentration of N type dopant can be 10 in gallium nitride layer in n type semiconductor layer 3018cm-3~
1019cm-3, preferably 5*1018cm-3.On the one hand a certain number of electronics can be provided, guarantee has sufficient amount of electron injection
Radiation recombination is carried out with hole in active layer to shine；On the other hand it avoids causing negatively influencing to the luminous efficiency of LED, for example reduces
The crystal quality etc. of epitaxial wafer entirety.
In another implementation of the present embodiment, the material of n type semiconductor layer 30 can use the nitridation of n-type doping
Gallium.
Further, the thickness of n type semiconductor layer 30 can be 1 μm~3 μm, preferably 1.5 μm；N type semiconductor layer 30
The doping concentration of middle N type dopant can be 1018cm-3~3*1019cm-3, preferably 6*1018cm-3。
Optionally, high as shown in Figure 1, the gallium nitride based LED epitaxial slice can also include high temperature buffer layer 71
Warm buffer layer 71 is arranged between buffer layer 20 and n type semiconductor layer 30, to alleviate the lattice between substrate and n type semiconductor layer
Mismatch.
In specific implementation, buffer layer is the gallium nitride of the layer of low-temperature epitaxy on substrate first, therefore also referred to as
For low temperature buffer layer.The longitudinal growth for carrying out gallium nitride in low temperature buffer layer again will form multiple mutually independent three-dimensional islands
Structure, referred to as three-dimensional nucleating layer；Then gallium nitride is carried out between each three-dimensional island structure on all three-dimensional island structures
Cross growth, form two-dimension plane structure, referred to as two-dimentional retrieving layer；It is finally one layer of high growth temperature thicker on two-dimensional growth layer
Gallium nitride, referred to as intrinsic gallium nitride layer.Three-dimensional nucleating layer, two-dimentional retrieving layer and intrinsic gallium nitride layer are referred to as in the present embodiment
For high temperature buffer layer.
Further, the thickness of three-dimensional nucleating layer can be 400nm~600nm, preferably 500nm.Two-dimentional retrieving layer
Thickness can be 500nm~800nm, preferably 650nm.The thickness of intrinsic gallium nitride layer can be 1 μm~2 μm, such as 1.5 μm.
Optionally, it as shown in Figure 1, the gallium nitride based LED epitaxial slice can also include stress release layer 72, answers
Power releasing layer 72 is arranged between n type semiconductor layer 30 and active layer 40, to produce to lattice mismatch between sapphire and gallium nitride
Raw stress is discharged, and the crystal quality of active layer is improved, and is conducive to electrons and holes in active layer and is carried out radiation recombination hair
Light improves the internal quantum efficiency of LED, and then improves the luminous efficiency of LED.
Specifically, stress release layer 72 may include multiple gallium indium nitride layers and multiple gallium nitride layers, multiple InGaNs
Layer and the alternately laminated setting of multiple gallium nitride layers.
Further, the thickness of gallium indium nitride layer can be 1nm~3nm, preferably 2nm in stress release layer 72；Nitridation
The thickness of gallium layer can be 20nm~40nm, preferably 30nm；The quantity of gallium indium nitride layer and the quantity of gallium nitride layer are identical, nitrogen
The quantity for changing gallium layer can be 3~9, preferably 6.
Optionally, as shown in Figure 1, the gallium nitride based LED epitaxial slice can also include electronic barrier layer 73, electricity
Sub- barrier layer 73 is arranged between active layer 40 and p type semiconductor layer 50, to avoid electron transition into p type semiconductor layer with sky
Cave carries out non-radiative recombination, reduces the luminous efficiency of LED.
Specifically, the material of electronic barrier layer 73 can be using the aluminium gallium nitride alloy (AlGaN) of p-type doping, such as AlyGa1-yN,
0.1 < y < 0.5.
Further, the thickness of electronic barrier layer 73 can be 50nm~100nm, preferably 75nm.
Preferably, as shown in Figure 1, the gallium nitride based LED epitaxial slice can also include low temperature P-type layer 74, low temperature
P-type layer 74 is arranged between active layer 40 and electronic barrier layer 73, has caused to avoid the higher growth temperature of electronic barrier layer
Phosphide atom in active layer is precipitated, and influences the luminous efficiency of light emitting diode.
In a kind of implementation of the present embodiment, low temperature P-type layer 74 can be essentially identical with p type semiconductor layer 50, no
It is only that with place, the growth temperature of low temperature P-type layer 74 is lower than the growth temperature of p type semiconductor layer 50.
In another implementation of the present embodiment, the material of low temperature P-type layer 74 can be the gallium nitride of p-type doping.
Further, the thickness of low temperature P-type layer 74 can be 30nm~50nm, preferably 40nm；P in low temperature P-type layer 74
The doping concentration of type dopant can be 1020/cm3~1021/cm3, preferably 5*1020/cm3。
Optionally, as shown in Figure 1, the LED epitaxial slice can also include p-type contact layer 75, p-type contact layer 75
It is laid on p type semiconductor layer 50, to form Europe between the electrode or transparent conductive film that are formed in chip fabrication technique
Nurse contact.
Specifically, the material of p-type contact layer 75 can be using the InGaN of p-type doping.
Further, the thickness of p-type contact layer 75 can be 5nm~100nm, preferably 50nm；P in p-type contact layer 75
The doping concentration of type dopant can be 1021/cm3~1022/cm3, preferably 6*1021/cm3。
A kind of specific implementation of gallium nitride based LED epitaxial slice shown in FIG. 1 includes: substrate 10, buffer layer 20, N
Type semiconductor layer 30, active layer 40 and p type semiconductor layer 50, buffer layer 20, n type semiconductor layer 30, active layer 40 and p-type are partly led
Body layer 50 is sequentially laminated on substrate 10.Wherein, the material of substrate 10 uses sapphire；The material of buffer layer 20 is using nitridation
Gallium, with a thickness of 25nm；The material of n type semiconductor layer 30 uses the gallium nitride of n-type doping, with a thickness of 1.5 μm, N type dopant
Doping concentration is 6*1018cm-3；Active layer 40 includes that alternately stacked 8 Quantum Well 41 and 8 quantum build 42, Quantum Well 41
Material is InGaN, Quantum Well 41 with a thickness of 3.5nm；Quantum build material be gallium nitride, quantum build with a thickness of 12nm；
P type semiconductor layer 50 includes alternately stacked 2 undoped Sc0.2Al0.8The N layers of GaN layer adulterated with 3 p-types,
Sc0.2Al0.8N layers with a thickness of 5nm, GaN layer with a thickness of 100nm, the doping concentration of P-type dopant is 10 in GaN layer19cm-3。
Chip is made in above-mentioned epitaxial wafer, is with a thickness of 300nm, doped with concentration by one with p type semiconductor layer
1019cm-3P-type dopant GaN layer composition and the identical epitaxial wafer of other layers of structure made of chip compare, luminous efficiency
Improve 2%~3%.
A kind of specific implementation of gallium nitride based LED epitaxial slice shown in FIG. 1 includes: substrate 10, buffer layer 20, N
Type semiconductor layer 30, active layer 40 and p type semiconductor layer 50, buffer layer 20, n type semiconductor layer 30, active layer 40 and p-type are partly led
Body layer 50 is sequentially laminated on substrate 10.Wherein, the material of substrate 10 uses sapphire；The material of buffer layer 20 is using nitridation
Gallium, with a thickness of 25nm；The material of n type semiconductor layer 30 uses the gallium nitride of n-type doping, with a thickness of 1.5 μm, N type dopant
Doping concentration is 6*1018cm-3；Active layer 40 includes that alternately stacked 8 Quantum Well 41 and 8 quantum build 42, Quantum Well 41
Material is InGaN, Quantum Well 41 with a thickness of 3.5nm；Quantum build material be gallium nitride, quantum build with a thickness of 12nm；
P type semiconductor layer 50 includes alternately stacked 6 undoped Sc0.4Al0.6The N layers of GaN layer adulterated with 7 p-types,
Sc0.4Al0.6N layers with a thickness of 3nm, GaN layer with a thickness of 36nm, the doping concentration of P-type dopant is 10 in GaN layer19cm-3。
Chip is made in above-mentioned epitaxial wafer, is with a thickness of 300nm, doped with concentration by one with p type semiconductor layer
1019cm-3P-type dopant GaN layer composition and the identical epitaxial wafer of other layers of structure made of chip compare, luminous efficiency
Improve 4%~5%.
A kind of specific implementation of gallium nitride based LED epitaxial slice shown in FIG. 1 includes: substrate 10, buffer layer 20, N
Type semiconductor layer 30, active layer 40 and p type semiconductor layer 50, buffer layer 20, n type semiconductor layer 30, active layer 40 and p-type are partly led
Body layer 50 is sequentially laminated on substrate 10.Wherein, the material of substrate 10 uses sapphire；The material of buffer layer 20 is using nitridation
Gallium, with a thickness of 25nm；The material of n type semiconductor layer 30 uses the gallium nitride of n-type doping, with a thickness of 1.5 μm, N type dopant
Doping concentration is 6*1018cm-3；Active layer 40 includes that alternately stacked 8 Quantum Well 41 and 8 quantum build 42, Quantum Well 41
Material is InGaN, Quantum Well 41 with a thickness of 3.5nm；Quantum build material be gallium nitride, quantum build with a thickness of 12nm；
P type semiconductor layer 50 includes alternately stacked 10 undoped Sc0.5Al0.5The N layers of GaN layer adulterated with 11 p-types,
Sc0.5Al0.5N layers with a thickness of 1nm, GaN layer with a thickness of 10nm, the doping concentration of P-type dopant is 10 in GaN layer19cm-3。
Chip is made in above-mentioned epitaxial wafer, is with a thickness of 300nm, doped with concentration by one with p type semiconductor layer
1019cm-3P-type dopant GaN layer composition and the identical epitaxial wafer of other layers of structure made of chip compare, luminous efficiency
Improve 1%~2%.
A kind of specific implementation of gallium nitride based LED epitaxial slice shown in FIG. 1 includes: substrate 10, buffer layer 20, N
Type semiconductor layer 30, active layer 40 and p type semiconductor layer 50, buffer layer 20, n type semiconductor layer 30, active layer 40 and p-type are partly led
Body layer 50 is sequentially laminated on substrate 10.Wherein, the material of substrate 10 uses sapphire；The material of buffer layer 20 is using nitridation
Gallium, with a thickness of 25nm；The material of n type semiconductor layer 30 uses the gallium nitride of n-type doping, with a thickness of 1.5 μm, N type dopant
Doping concentration is 6*1018cm-3；Active layer 40 includes that alternately stacked 8 Quantum Well 41 and 8 quantum build 42, Quantum Well 41
Material is InGaN, Quantum Well 41 with a thickness of 3.5nm；Quantum build material be gallium nitride, quantum build with a thickness of 12nm；
P type semiconductor layer 50 includes alternately stacked 10 undoped Sc0.7Al0.3The N layers of GaN layer adulterated with 11 p-types,
Sc0.7Al0.3N layers with a thickness of 1nm, GaN layer with a thickness of 10nm, the doping concentration of P-type dopant is 10 in GaN layer19cm-3。
Chip is made in above-mentioned epitaxial wafer, is with a thickness of 300nm, doped with concentration by one with p type semiconductor layer
1019cm-3P-type dopant GaN layer composition and the identical epitaxial wafer of other layers of structure made of chip compare, luminous efficiency
Improve 2%~3%.
The embodiment of the invention provides a kind of production methods of gallium nitride based LED epitaxial slice, are suitable for production figure
Gallium nitride based LED epitaxial slice shown in 1.Fig. 3 is a kind of gallium nitride based light emitting diode provided in an embodiment of the present invention
The flow chart of the production method of epitaxial wafer, referring to Fig. 3, which includes:
Step 201: a substrate is provided.
Optionally, which may include:
Controlled at 1000 DEG C~1200 DEG C (preferably 1100 DEG C), in hydrogen atmosphere to substrate carry out 1 minute~
It makes annealing treatment within 10 minutes (preferably 8 minutes)；
Nitrogen treatment is carried out to substrate.
The surface for cleaning substrate through the above steps avoids being conducive to the life for improving epitaxial wafer in impurity incorporation epitaxial wafer
Long quality.
Step 202: successively grown buffer layer, n type semiconductor layer, active layer and p type semiconductor layer on substrate.
Wherein, p type semiconductor layer includes the gallium nitride layer of M undoped scandium nitride aluminium layers and (M+1) a p-type doping, M
A scandium nitride aluminium layer and the alternately laminated setting of (M+1) a gallium nitride layer.
Optionally, the growth conditions of scandium nitride aluminium layer can be identical as the growth conditions of gallium nitride layer, and growth conditions includes
Growth temperature and growth pressure.It is fairly simple in realization and conveniently using identical growth conditions.
Preferably, the growth temperature of p type semiconductor layer can be 850 DEG C~950 DEG C (preferably 900 DEG C), P-type semiconductor
The growth pressure of layer can be 100torr~300torr (preferably 200torr).Under the cooperation of above-mentioned growth conditions, p-type
The crystal quality of semiconductor layer is preferable, is conducive to the luminous efficiency for improving LED.
Specifically, which may include:
The first step, controlled at 400 DEG C~600 DEG C (preferably 500 DEG C), pressure is that 400torr~600torr is (excellent
It is selected as 500torr), grown buffer layer on substrate；
Second step, controlled at 1000 DEG C~1100 DEG C (preferably 1050 DEG C), pressure is 100torr~500torr
(preferably 300torr), grows n type semiconductor layer on the buffer layer；
Third step grows active layer on n type semiconductor layer；Wherein, the growth temperature of Quantum Well is 720 DEG C~800 DEG C
(preferably 760 DEG C), pressure are 100torr~500torr (preferably 300torr)；Quantum build growth temperature be 900 DEG C~
950 DEG C (preferably 925 DEG C), pressure is 100torr~500torr (preferably 300torr)；
4th step, controlled at 850 DEG C~950 DEG C (preferably 900 DEG C), pressure is that 100torr~300torr is (excellent
It is selected as 200torr), the growing P-type semiconductor layer on active layer.
Optionally, after the first step, which can also include:
Controlled at 1000 DEG C~1200 DEG C (preferably 1100 DEG C), pressure be 400torr~600torr (preferably
500torr), the in-situ annealing carried out 5 minutes~10 minutes (preferably 8 minutes) to buffer layer is handled.
Optionally, before second step, which can also include:
High temperature buffer layer is grown on the buffer layer.
Correspondingly, n type semiconductor layer is grown on high temperature buffer layer.
Specifically, high temperature buffer layer is grown on the buffer layer, may include:
Controlled at 1000 DEG C~1040 DEG C (preferably 1020 DEG C), pressure be 400torr~600torr (preferably
500torr), growing three-dimensional nucleating layer on the buffer layer；
Controlled at 1040 DEG C~1080 DEG C (preferably 1060 DEG C), pressure be 400torr~600torr (preferably
500torr), two-dimentional retrieving layer is grown in three-dimensional nucleation；
Controlled at 1050 DEG C~1100 DEG C (preferably 1050 DEG C), pressure be 100torr~500torr (preferably
300torr), intrinsic gallium nitride layer is grown in two-dimentional retrieving layer.
Optionally, before third step, which can also include:
The growth stress releasing layer on n type semiconductor layer.
Correspondingly, active layer is grown on stress release layer.
Specifically, the growth stress releasing layer on n type semiconductor layer may include:
Controlled at 800 DEG C~1100 DEG C (preferably 950 DEG C), pressure be 100torr~500torr (preferably
300torr), the growth stress releasing layer on n type semiconductor layer.
Optionally, before the 4th step, which can also include:
Electronic barrier layer is grown on active layer.
Correspondingly, p type semiconductor layer is grown on electronic barrier layer.
Specifically, electronic barrier layer is grown on active layer, may include:
Controlled at 900 DEG C~1000 DEG C (preferably 950 DEG C), pressure be 200torr~500torr (preferably
350torr), electronic barrier layer is grown on active layer.
Preferably, before growing electronic barrier layer on active layer, which can also include:
The growing low temperature P-type layer on active layer.
Correspondingly, electronic barrier layer is grown in low temperature P-type layer.
Specifically, the growing low temperature P-type layer on active layer may include:
Controlled at 750 DEG C~850 DEG C (preferably 800 DEG C), pressure be 100torr~500torr (preferably
300torr), the growing low temperature P-type layer on active layer.
Optionally, after the 4th step, which can also include:
The growing P-type contact layer on p type semiconductor layer.
Specifically, the growing P-type contact layer on p type semiconductor layer may include:
Controlled at 850 DEG C~1000 DEG C (preferably 925 DEG C), pressure be 100torr~300torr (preferably
200torr), the growing P-type contact layer on p type semiconductor layer.
It should be noted that after above-mentioned epitaxial growth terminates, can first by temperature be reduced to 650 DEG C~850 DEG C (preferably
It is 750 DEG C), the annealing of 5 minutes~15 minutes (preferably 10 minutes) is carried out to epitaxial wafer in nitrogen atmosphere, then again
The temperature of epitaxial wafer is reduced to room temperature.
Control temperature, pressure each mean temperature, pressure in the reaction chamber of control growth epitaxial wafer, and specially metal is organic
Compound chemical gaseous phase deposition (English: Metal-organic Chemical Vapor Deposition, referred to as: MOCVD) set
Standby reaction chamber.Using trimethyl gallium or triethyl-gallium as gallium source when realization, high-purity ammonia is as nitrogen source, and trimethyl indium is as indium
Source, trimethyl aluminium is as silicon source, and for scandium phosphino- arbine complex as scandium source, N type dopant selects silane, and P-type dopant is selected
Two luxuriant magnesium.
The foregoing is merely presently preferred embodiments of the present invention, is not intended to limit the invention, it is all in spirit of the invention and
Within principle, any modification, equivalent replacement, improvement and so on be should all be included in the protection scope of the present invention.
Claims (10)
1. a kind of gallium nitride based LED epitaxial slice, the gallium nitride based LED epitaxial slice includes substrate, buffering
Layer, n type semiconductor layer, active layer and p type semiconductor layer, the buffer layer, the n type semiconductor layer, the active layer and institute
It states p type semiconductor layer to stack gradually over the substrate, which is characterized in that the p type semiconductor layer includes M undoped nitrogen
Change the gallium nitride layer of scandium aluminium layer and (M+1) a p-type doping, the M scandium nitride aluminium layers and (M+1) a described gallium nitride layer alternating
It is stacked, M is positive integer.
2. gallium nitride based LED epitaxial slice according to claim 1, which is characterized in that the scandium nitride aluminium layer is
ScaAl1-aN layers, 0.2 < a < 0.7.
3. gallium nitride based LED epitaxial slice according to claim 1 or 2, which is characterized in that the scandium nitride aluminium
Layer with a thickness of 1nm~5nm.
4. gallium nitride based LED epitaxial slice according to claim 3, which is characterized in that the thickness of the gallium nitride layer
Degree is the scandium nitride aluminium layer with a thickness of 5 times~20 times.
5. gallium nitride based LED epitaxial slice according to claim 1 or 2, which is characterized in that 2≤M≤10.
6. gallium nitride based LED epitaxial slice according to claim 5, which is characterized in that the p type semiconductor layer
With a thickness of 100nm~300nm.
7. gallium nitride based LED epitaxial slice according to claim 1 or 2, which is characterized in that the gallium nitride layer
The doping concentration of middle P-type dopant is 1018/cm3~1020/cm3。
8. a kind of production method of gallium nitride based LED epitaxial slice, which is characterized in that the production method includes:
One substrate is provided；
Successively grown buffer layer, n type semiconductor layer, active layer and p type semiconductor layer over the substrate；
Wherein, the p type semiconductor layer includes the gallium nitride layer of M undoped scandium nitride aluminium layers and (M+1) a p-type doping, M
A scandium nitride aluminium layer and (M+1) a described alternately laminated setting of gallium nitride layer.
9. production method according to claim 8, which is characterized in that the growth conditions and the nitrogen of the scandium nitride aluminium layer
The growth conditions for changing gallium layer is identical, and the growth conditions includes growth temperature and growth pressure.
10. manufacturing method according to claim 9, which is characterized in that the growth temperature of the p type semiconductor layer is 850
DEG C~950 DEG C, the growth pressure of the p type semiconductor layer is 100torr~300torr.
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| CN115036402A (en) * | 2022-08-12 | 2022-09-09 | 江苏第三代半导体研究院有限公司 | Induced enhanced Micro-LED homoepitaxy structure and preparation method thereof |
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| CN116454185A (en) * | 2023-06-16 | 2023-07-18 | 江西兆驰半导体有限公司 | High-light-efficiency light-emitting diode epitaxial wafer, preparation method thereof and light-emitting diode |
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| CN111785794A (en) * | 2020-07-20 | 2020-10-16 | 西安电子科技大学 | N-polarity InGaN-based solar cell based on enhanced electric field of ScAlN and InAlN polarized insertion layer |
| CN111785794B (en) * | 2020-07-20 | 2023-09-08 | 西安电子科技大学 | N-polarity InGaN-based solar cell based on ScAlN and InAlN polarization insertion layer enhanced electric field |
| CN114256395A (en) * | 2022-03-01 | 2022-03-29 | 江西兆驰半导体有限公司 | LED epitaxial wafer, epitaxial growth method and LED chip |
| CN115036402A (en) * | 2022-08-12 | 2022-09-09 | 江苏第三代半导体研究院有限公司 | Induced enhanced Micro-LED homoepitaxy structure and preparation method thereof |
| CN115472720A (en) * | 2022-10-31 | 2022-12-13 | 江西兆驰半导体有限公司 | Light emitting diode epitaxial wafer, preparation method thereof and light emitting diode |
| CN116454185A (en) * | 2023-06-16 | 2023-07-18 | 江西兆驰半导体有限公司 | High-light-efficiency light-emitting diode epitaxial wafer, preparation method thereof and light-emitting diode |
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