CN109087977A - A kind of gallium nitride based LED epitaxial slice and preparation method thereof - Google Patents
A kind of gallium nitride based LED epitaxial slice and preparation method thereof Download PDFInfo
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- CN109087977A CN109087977A CN201810825958.2A CN201810825958A CN109087977A CN 109087977 A CN109087977 A CN 109087977A CN 201810825958 A CN201810825958 A CN 201810825958A CN 109087977 A CN109087977 A CN 109087977A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
Abstract
The invention discloses a kind of gallium nitride based LED epitaxial slices and preparation method thereof, belong to technical field of semiconductors.Epitaxial wafer includes substrate, buffer layer, n type semiconductor layer, active layer and p type semiconductor layer, the buffer layer, the n type semiconductor layer, the active layer and the p type semiconductor layer stack gradually over the substrate, the n type semiconductor layer includes the gallium nitride layer of multiple undoped scandium nitride aluminium layers and multiple n-type dopings, multiple scandium nitride aluminium layers and multiple alternately laminated settings of the gallium nitride layer.The present invention is by by the alternately laminated formation n type semiconductor layer of the gallium nitride layer of undoped scandium nitride aluminium layer and n-type doping, there are stronger two-dimensional electron gas for the interface of scandium nitride aluminium layer and gallium nitride layer, the ability extending transversely of electronics can effectively be promoted, it does not need that uniformity and consistency that current extending realization electronics is distributed in n type semiconductor layer are arranged again, the series resistance for reducing epitaxial wafer, reduces the forward voltage of chip.
Description
Technical field
The present invention relates to technical field of semiconductors, in particular to a kind of gallium nitride based LED epitaxial slice and its preparation
Method.
Background technique
Light emitting diode (English: Light Emitting Diode, referred to as: LED) it is a kind of semi-conductor electricity that can be luminous
Subcomponent.As a kind of New Solid lighting source efficiently, environmentally friendly, green, LED is widely used in rapidly traffic
The fields such as signal lamp, automobile interior exterior lamp, landscape light in city, cell phone back light source.
Gallium nitride (GaN) has good thermal conductivity, while having the good characteristics such as high temperature resistant, acid and alkali-resistance, high rigidity,
Gallium nitride (GaN) base LED is set to receive more and more attention and study.Existing GaN-based LED epitaxial wafer includes substrate, delays
Rush layer, n type semiconductor layer, active layer and p type semiconductor layer, buffer layer, n type semiconductor layer, active layer and p type semiconductor layer according to
It is secondary to be layered on substrate.P type semiconductor layer is used to provide the hole for carrying out recombination luminescence, and n type semiconductor layer is for providing progress
The electronics of recombination luminescence, the radiation recombination that active layer is used to carry out electrons and holes shine, and substrate for epitaxial material for providing
Growing surface；The material of substrate generally selects sapphire, and the material of n type semiconductor layer etc. generally selects gallium nitride, sapphire and
Gallium nitride is dissimilar materials, there is biggish lattice mismatch between the two, buffer layer for alleviate substrate and n type semiconductor layer it
Between lattice mismatch.
In the implementation of the present invention, the inventor finds that the existing technology has at least the following problems:
Epitaxial wafer carries out in the positive cartridge chip or flip-chip of chip technology formation, and the electronics in n type semiconductor layer is
It is migrated along the direction vertical with the stacking direction of epitaxial wafer.In order to avoid positive cartridge chip or the forward voltage of flip-chip
Excessively high, n type semiconductor layer would generally be thicker.But it is easy to draw when the N type dopants such as heavily-doped Si in this way in n type semiconductor layer
Enter more defect and impurity, and the defect and impurity being introduced into influences whether the extension of electronics in n type semiconductor layer, leads to electronics
Being unevenly distributed in n type semiconductor layer reduces the luminous efficiency of LED.
In order to realize uniformity and consistency that electronics is distributed in n type semiconductor layer, current extending can be generally introduced
Improve this situation, the gallium nitride layer of low-mix silicon is set such as between n type semiconductor layer and active layer.The current extending of introducing
Be conducive to electronics to extend in n type semiconductor layer, but can also introduce excessive series resistance simultaneously, causes the forward direction electricity of chip
Pressure increases.
Summary of the invention
The embodiment of the invention provides a kind of gallium nitride based LED epitaxial slice and preparation method thereof, it is able to solve existing
There is the problem of technology improves the extended capability of electronics in n type semiconductor layer in the case where not influencing chip forward voltage.It is described
Technical solution is as follows:
On the one hand, the embodiment of the invention provides a kind of gallium nitride based LED epitaxial slice, the gallium nitride base hairs
Optical diode epitaxial wafer includes substrate, buffer layer, n type semiconductor layer, active layer and p type semiconductor layer, the buffer layer, described
N type semiconductor layer, the active layer and the p type semiconductor layer stack gradually over the substrate, the n type semiconductor layer packet
Include the gallium nitride layer of multiple undoped scandium nitride aluminium layers and multiple n-type dopings, multiple scandium nitride aluminium layers and multiple described
The alternately laminated setting of gallium nitride layer.
Optionally, the scandium nitride aluminium layer is ScxAl1-xN layers, 0 < x < 0.6.
Optionally, 5 times~20 times of the thickness with a thickness of the scandium nitride aluminium layer of the gallium nitride layer.
Optionally, the n type semiconductor layer with a thickness of 0.5 μm~5 μm.
Preferably, the quantity of the scandium nitride aluminium layer and the gallium nitride layer is L a, and 10≤L≤30 and L are integer.
It is highly preferred that the sum of thickness of a scandium nitride aluminium layer and a gallium nitride layer is 20nm~250nm.
Optionally, the gallium nitride based LED epitaxial slice further includes electronic barrier layer, and the electronic barrier layer is set
It sets between the active layer and the p type semiconductor layer, the electronic barrier layer includes scandium nitride aluminium layer.
On the other hand, the embodiment of the invention provides a kind of preparation method of gallium nitride based LED epitaxial slice, institutes
Stating preparation method includes:
One substrate is provided；
Successively grown buffer layer, n type semiconductor layer, active layer and p type semiconductor layer over the substrate；
Wherein, the n type semiconductor layer includes the gallium nitride of multiple undoped scandium nitride aluminium layers and multiple n-type dopings
Layer, multiple scandium nitride aluminium layers and multiple alternately laminated settings of the gallium nitride layer.
Optionally, the growth temperature of the n type semiconductor layer is 1000 DEG C~1200 DEG C.
Optionally, the growth pressure of the n type semiconductor layer is 100torr~500torr.
Technical solution provided in an embodiment of the present invention has the benefit that
By by the alternately laminated formation n type semiconductor layer of the gallium nitride layer of undoped scandium nitride aluminium layer and n-type doping, nitrogen
There are stronger two-dimensional electron gas for the interface of change scandium aluminium layer and gallium nitride layer, can effectively promote the energy extending transversely of electronics
Power does not need that uniformity and consistency that current extending realization electronics is distributed in n type semiconductor layer are arranged again, reduces extension
The series resistance of piece reduces the forward voltage of chip.
Detailed description of the invention
To describe the technical solutions in the embodiments of the present invention more clearly, make required in being described below to embodiment
Attached drawing is briefly described, it should be apparent that, drawings in the following description are only some embodiments of the invention, for
For those of ordinary skill in the art, without creative efforts, it can also be obtained according to these attached drawings other
Attached drawing.
Fig. 1 is a kind of structural schematic diagram of gallium nitride based LED epitaxial slice provided in an embodiment of the present invention；
Fig. 2 is the structural schematic diagram of n type semiconductor layer provided in an embodiment of the present invention；
Fig. 3 is a kind of process of the preparation method of gallium nitride based LED epitaxial slice provided in an embodiment of the present invention
Figure.
Specific embodiment
To make the object, technical solutions and advantages of the present invention clearer, below in conjunction with attached drawing to embodiment party of the present invention
Formula is described in further detail.
The embodiment of the invention provides a kind of gallium nitride based LED epitaxial slice, Fig. 1 provides for the embodiment of the present invention
A kind of gallium nitride based LED epitaxial slice structural schematic diagram, referring to Fig. 1, the gallium nitride based LED epitaxial slice
Including substrate 10, buffer layer 20, n type semiconductor layer 30, active layer 40 and p type semiconductor layer 50, buffer layer 20, N-type semiconductor
Layer 30, active layer 40 and p type semiconductor layer 50 are sequentially laminated on substrate 10.
Fig. 2 is the structural schematic diagram of n type semiconductor layer provided in an embodiment of the present invention, referring to fig. 2, in the present embodiment, N
Type semiconductor layer 30 includes the gallium nitride layer 32 of multiple undoped scandium nitride aluminium layers 31 and multiple n-type dopings, multiple scandium nitrides
Aluminium layer 31 and the alternately laminated setting of multiple gallium nitride layers 32.
It should be noted that only scandium nitride aluminium layer 31 is first laminated in Fig. 2, then be laminated for gallium nitride layer 32.In reality
In, gallium nitride layer 32 can also first be laminated, then scandium nitride aluminium layer 31 is laminated.Simultaneously in Fig. 2 scandium nitride aluminium layer 31 quantity
Identical with the quantity of gallium nitride layer 32 is also citing, in practical applications, can compare gallium nitride layer with the quantity of scandium nitride aluminium layer 31
32 quantity is 1 more, can also with the quantity of gallium nitride layer 32 than scandium nitride aluminium layer 31 quantity more than 1.Preferably, gallium nitride layer
32 quantity than scandium nitride aluminium layer 31 quantity more than 1, be laminated at first and finally in n type semiconductor layer 30 at this time be all nitridation
Gallium layer 32, the matching with other layers are preferable.
The embodiment of the present invention is by by the alternately laminated formation N of the gallium nitride layer of undoped scandium nitride aluminium layer and n-type doping
There are stronger two-dimensional electron gas for the interface of type semiconductor layer, scandium nitride aluminium layer and gallium nitride layer, can effectively promote electronics
Ability extending transversely, do not need to be arranged again current extending and realize the uniformity and one that electronics is distributed in n type semiconductor layer
Cause property, reduces the series resistance of epitaxial wafer, reduces the forward voltage of chip.And the capability improving extending transversely of electronics, favorably
In the mobility for improving electronics, and then improve the antistatic breakdown capability of light emitting diode.
Optionally, scandium nitride aluminium layer 31 can be ScxAl1-xN layers, 0 < x < 0.6, x is preferably 0.3, so that scandium nitride aluminium
Layer can realize preferable cooperation with gallium nitride layer, effectively promote the ability extending transversely of electronics.
Optionally, the thickness of gallium nitride layer 32 can for 5 times of thickness of scandium nitride aluminium layer 31~20 times, preferably 12
Times.The thickness of one side gallium nitride layer is larger, can integrally remain gallium nitride, while being the recombination luminescence in active layer
Sufficient amount of electronics is provided；The thickness of another aspect scandium nitride aluminium layer differs in a certain range with the thickness of gallium nitride layer,
Scandium nitride aluminium layer can preferably cooperate with gallium nitride layer, effectively promote the ability extending transversely of electronics, while avoid increasing outer
Prolong the series resistance of piece.
Optionally, the thickness of n type semiconductor layer 30 can be 0.5 μm~5 μm, preferably 3 μm.Do not increase N-type partly to lead
The thickness of body layer avoids the series resistance for increasing epitaxial wafer.
Further, the quantity of scandium nitride aluminium layer 31 and gallium nitride layer 32 can be L a, and 10≤L≤30 and L are whole
Number, L is preferably 20.It is as each in reduction n type semiconductor layer as possible in the case where effectively promoting the ability extending transversely of electronics
The quantity (i.e. the quantity of scandium nitride aluminium layer and gallium nitride layer) of sublayer simplifies and realizes, facilitates production.
Further, the sum of thickness of a scandium nitride aluminium layer 31 and a gallium nitride layer 32 is 20nm~250nm, excellent
It is selected as 140nm, to cooperate the quantity of scandium nitride aluminium layer and gallium nitride layer, makes the thickness of n type semiconductor layer entirety in suitable model
In enclosing.
Optionally, the doping concentration of N type dopant can be 10 in gallium nitride layer 3218cm-3~1019cm-3, preferably 5*
1018cm-3.On the one hand a certain number of electronics can be provided, guarantee have in sufficient amount of electron injection active layer with hole into
Row radiation recombination shines；On the other hand it avoids causing the luminous efficiency of LED negatively influencing, for example reduces the crystal of epitaxial wafer entirety
Quality etc..
Specifically, the material of substrate 10 can use sapphire (main component Al2O3), it is preferred to use [0001] crystal orientation
Sapphire.The material of buffer layer 20 can use gallium nitride (GaN).Active layer 40 may include multiple Quantum Well and multiple amounts
Son is built, and multiple Quantum Well and multiple quantum build alternately laminated setting；The material of Quantum Well can use InGaN (InGaN),
The material that quantum is built can use gallium nitride.The material of p type semiconductor layer 50 can be using the gallium nitride of p-type doping.
Further, the thickness of buffer layer 20 can be 15nm~35nm, preferably 25nm.The thickness of Quantum Well can be
2nm~4nm, preferably 3nm；The thickness that quantum is built can be 9nm~20nm, preferably 15nm；The quantity and quantum of Quantum Well
The quantity at base is identical, and the quantity that quantum is built can be 5~11, preferably 8.The thickness of p type semiconductor layer 50 can be
100nm~800nm, preferably 450nm；The doping concentration of P-type dopant can be 10 in p type semiconductor layer 5019/cm3~
1020/cm3, preferably 5*1019cm-3。
Optionally, as shown in Figure 1, the gallium nitride based LED epitaxial slice can also include electronic barrier layer 60, electricity
Sub- barrier layer 60 is arranged between active layer 40 and p type semiconductor layer 50, to avoid electron transition into p type semiconductor layer with sky
Cave carries out non-radiative recombination, reduces the luminous efficiency of LED.
In a kind of implementation in the present embodiment, electronic barrier layer 60 may include scandium nitride aluminium layer.
The material of electronic barrier layer is scandium nitride aluminium, and the energy level of scandium nitride aluminium is higher, and effectively electron transition can be stopped to P
Non-radiative shine is carried out in type semiconductor layer with hole.The lattice of scandium nitride aluminium and the lattice comparison match of gallium nitride simultaneously, can
To alleviate the stress and defect that lattice mismatch generates between sapphire and gallium nitride, the crystal quality of electronic barrier layer is improved, is kept away
Exempt to generate leak channel in electronic barrier layer, will not influence electronic barrier layer and stop electron transition into p type semiconductor layer.Cause
This, ensure that electronic barrier layer to the blocking effect of electronics, greatly reduces electronics and the non-radiative of hole shines, improve
The internal quantum efficiency of LED, and then improve the luminous efficiency of LED.
Optionally, the thickness of electronic barrier layer 60 can be 15nm~80nm.Material uses the electronic blocking of scandium nitride aluminium
The thickness of layer is less than material using the thickness of the electronic barrier layer of aluminium gallium nitride alloy, i.e. the thickness of electronic barrier layer reduces, favorably
In the forward voltage for reducing LED.
Optionally, electronic barrier layer 60 can be made of a scandium nitride aluminium layer, i.e., scandium nitride aluminium layer in electronic barrier layer
Quantity be one.In the case where guaranteeing effective blocking of the electronic barrier layer to electronics, simplifies and realize, facilitate production.
It is readily apparent that, in above-mentioned implementation, the thickness of scandium nitride aluminium layer can be 15nm~80nm, preferably
45nm。
At this point, scandium nitride aluminium layer can be ScaAl1-aN layers, 0.1 < a < 0.4, a is preferably 0.2.On the one hand can guarantee
Electronic barrier layer plays the role of stopping electron transition into p type semiconductor layer, and another aspect scandium nitride aluminium layer is with higher
The density of volume charges and carrier mobility are conducive to hole and carry out in electronic barrier layer extending transversely, promote the injection in hole
Efficiency further increases the internal quantum efficiency of LED, the final luminous efficiency for improving LED.
Optionally, the gallium nitride layer alternating layer that electronic barrier layer 60 can be adulterated by multiple scandium nitride aluminium layers and multiple p-types
Folded to form, i.e., the quantity of scandium nitride aluminium layer may be multiple in electronic barrier layer, and electronic barrier layer further includes multiple p-types at this time
The gallium nitride layer of doping, multiple scandium nitride aluminium layers and the alternately laminated setting of multiple gallium nitride layers.By multiple gallium nitride layers with it is multiple
The alternately laminated setting of scandium nitride aluminium, can be further improved the matching degree of electronic barrier layer and gallium nitride crystal lattice, is effectively relieved
The stress and defect that lattice mismatch generates between sapphire and gallium nitride, make the crystal quality of electronic barrier layer, avoid as far as possible
Leak channel is generated in electronic barrier layer, electronic barrier layer effectively can stop electron transition into p type semiconductor layer.
At this point, the quantity of scandium nitride aluminium layer and gallium nitride layer can be M, 4≤M≤10 and M is integer, M is preferably
7.In the preferable situation of crystal quality for guaranteeing electronic barrier layer, the quantity of each sublayer as far as possible in reduction electronic barrier layer
(i.e. the quantity of scandium nitride aluminium layer and gallium nitride layer) simplifies and realizes, facilitate production.
Further, the sum of thickness of a scandium nitride aluminium layer and a gallium nitride layer can be 3nm~8nm, preferably
6nm makes the thickness of electronic barrier layer entirety in suitable range to cooperate the quantity of scandium nitride aluminium layer and gallium nitride layer.
Further, the thickness of scandium nitride aluminium layer can be 1 times~4 times, preferably 3 times of the thickness of gallium nitride layer.
The thickness of one side scandium nitride aluminium layer is larger, and electron transition can effectively be stopped to carry out non-spoke with electronics into p type semiconductor layer
It penetrates compound；The thickness of another aspect gallium nitride layer and the thickness of scandium nitride aluminium layer are not much different, and gallium nitride layer can play matching
The effect of gallium nitride improves the crystal quality of electronic barrier layer, guarantees scandium nitride aluminium layer to the blocking effect of electronics.
At this point, scandium nitride aluminium layer can be ScbAl1-bN layers, 0.2 < b < 0.6, b is preferably 0.4.On the one hand can guarantee
Electronic barrier layer plays the role of stopping electron transition into p type semiconductor layer, and another aspect scandium nitride aluminium layer is with higher
The density of volume charges and carrier mobility are conducive to hole and carry out in electronic barrier layer extending transversely, promote the injection in hole
Efficiency further increases the internal quantum efficiency of LED, the final luminous efficiency for improving LED.
In addition, in above two implementation, it can be empty to provide part mixed with P-type dopant in scandium nitride aluminium layer
The internal quantum efficiency of LED is improved, and then improve to be conducive to carry out recombination luminescence with electronics in hole injection active layer in cave
The luminous efficiency of LED.In practical applications, it can also undope in scandium nitride aluminium layer.
Specifically, when in scandium nitride aluminium layer mixed with P-type dopant, the doping concentration of P-type dopant in scandium nitride aluminium layer
Can be identical as the doping concentration of P-type dopant in the gallium nitride layer in electronic barrier layer, have reached preferable matching effect.
Optionally, the doping concentration of P-type dopant can be 10 in the gallium nitride layer in electronic barrier layer 6017/cm3~
1018/cm3, preferably 5*1017/cm3.On the one hand a certain number of holes can be provided, be conducive to hole injection active layer in
Electronics carries out radiation recombination and shines, and improves the internal quantum efficiency of LED, and then improve the luminous efficiency of LED；On the other hand it avoids pair
The luminous efficiency of LED causes negatively influencing, for example influences hole injection active layer, the reduction electronic barrier layer in p type semiconductor layer
Crystal quality etc..
In another implementation of the present embodiment, the material of electronic barrier layer 60 can be using the nitridation of p-type doping
Gallium aluminium (AlGaN), such as AlyGa1-yN, 0.1 < y < 0.5.
Specifically, the thickness of electronic barrier layer 60 can be 50nm~150nm, preferably 100nm.
Further, low as shown in Figure 1, the gallium nitride based LED epitaxial slice can also include low temperature P-type layer 70
Warm P-type layer 70 is arranged between active layer 40 and electronic barrier layer 60, causes to avoid the higher growth temperature of electronic barrier layer
Phosphide atom in active layer is precipitated, and influences the luminous efficiency of light emitting diode.
Specifically, the material of low temperature P-type layer 70 can be identical as p type semiconductor layer 50, is in the present embodiment p-type doping
Gallium nitride.
Further, the thickness of low temperature P-type layer 70 can be 50nm~150nm, preferably 100nm；In low temperature P-type layer 70
The doping concentration of P-type dopant can be 1020/cm3~1021/cm3, preferably 5*1020/cm3。
Optionally, as shown in Figure 1, the gallium nitride based LED epitaxial slice can also include undoped gallium nitride layer
71, undoped gallium nitride layer 71 is arranged between buffer layer 20 and n type semiconductor layer 30, to alleviate substrate and n type semiconductor layer
Between lattice mismatch.
Further, the thickness of undoped gallium nitride layer 71 can be 1 μm~5 μm, preferably 3 μm.
In specific implementation, buffer layer is the gallium nitride of the layer of low-temperature epitaxy on substrate first, therefore also referred to as
For low temperature buffer layer.The longitudinal growth for carrying out gallium nitride in low temperature buffer layer again will form multiple mutually independent three-dimensional islands
Structure, referred to as three-dimensional nucleating layer；Then gallium nitride is carried out between each three-dimensional island structure on all three-dimensional island structures
Cross growth, form two-dimension plane structure, referred to as two-dimentional retrieving layer；It is finally one layer of high growth temperature thicker on two-dimensional growth layer
Gallium nitride, referred to as high temperature buffer layer.Three-dimensional nucleating layer, two-dimentional retrieving layer and high temperature buffer layer are referred to as not in the present embodiment
Doped gallium nitride layer.
Optionally, it as shown in Figure 1, the gallium nitride based LED epitaxial slice can also include stress release layer 72, answers
Power releasing layer 72 is arranged between n type semiconductor layer 30 and active layer 40, to produce to lattice mismatch between sapphire and gallium nitride
Raw stress is discharged, and the crystal quality of active layer is improved, and is conducive to electrons and holes in active layer and is carried out radiation recombination hair
Light improves the internal quantum efficiency of LED, and then improves the luminous efficiency of LED.
Specifically, stress release layer 72 may include multiple gallium indium nitride layers and multiple gallium nitride layers, multiple InGaNs
Layer and the alternately laminated setting of multiple gallium nitride layers.
Further, the thickness of gallium indium nitride layer can be 1nm~3nm, preferably 2nm；The thickness of gallium nitride layer can be with
For 20nm~40nm, preferably 30nm；The quantity of gallium indium nitride layer and the quantity of gallium nitride layer are identical, and the quantity of gallium nitride layer can
Think 3~9, preferably 6.
Optionally, as shown in Figure 1, the LED epitaxial slice can also include p-type contact layer 73, p-type contact layer 73
It is laid on p type semiconductor layer 50, to form Europe between the electrode or transparent conductive film that are formed in chip fabrication technique
Nurse contact.
Specifically, the material of p-type contact layer 73 can be using the InGaN of p-type doping.
Further, the thickness of p-type contact layer 73 can be 5nm~20nm, preferably 12.5nm；P in p-type contact layer 73
The doping concentration of type dopant can be 1021/cm3~1022/cm3, preferably 6*1021/cm3。
A kind of specific implementation of gallium nitride based LED epitaxial slice shown in FIG. 1 includes: substrate 10, buffer layer 20, N
Type semiconductor layer 30, active layer 40 and p type semiconductor layer 50, buffer layer 20, n type semiconductor layer 30, active layer 40 and p-type are partly led
Body layer 50 is sequentially laminated on substrate 10.Wherein, the material of substrate 10 uses sapphire；The material of buffer layer 20 is using nitridation
Gallium, with a thickness of 25nm；N type semiconductor layer 30 includes alternately stacked 10 undoped Sc0.1Al0.9N layers and 10 n-type dopings
GaN layer, Sc0.1Al0.9N layers with a thickness of 20nm, GaN layer with a thickness of 230nm, the doping concentration of N type dopant in GaN layer
For 5*1018cm-3；Active layer 40 includes that alternately stacked 8 Quantum Well and 8 quantum are built, and the material of Quantum Well uses indium nitride
Gallium, Quantum Well with a thickness of 3nm, the material that quantum is built uses gallium nitride, quantum build with a thickness of 15nm；P type semiconductor layer 50
Material use the gallium nitride of p-type doping, with a thickness of 450nm, the doping concentration of P-type dopant is 5*1019cm-3。
Chip is made in above-mentioned epitaxial wafer, with n type semiconductor layer by one with a thickness of 3 μm, doped with concentration be 5*
1018cm-3N type dopant GaN layer composition and the identical epitaxial wafer of other layers of structure made of chip compare, luminous efficiency
Improve 2%~3%.
A kind of specific implementation of gallium nitride based LED epitaxial slice shown in FIG. 1 includes: substrate 10, buffer layer 20, N
Type semiconductor layer 30, active layer 40 and p type semiconductor layer 50, buffer layer 20, n type semiconductor layer 30, active layer 40 and p-type are partly led
Body layer 50 is sequentially laminated on substrate 10.Wherein, the material of substrate 10 uses sapphire；The material of buffer layer 20 is using nitridation
Gallium, with a thickness of 25nm；N type semiconductor layer 30 includes alternately stacked 20 undoped Sc0.3Al0.7N layers and 20 n-type dopings
GaN layer, Sc0.3Al0.7N layers with a thickness of 10nm, GaN layer with a thickness of 130nm, the doping concentration of N type dopant in GaN layer
For 5*1018cm-3；Active layer 40 includes that alternately stacked 8 Quantum Well and 8 quantum are built, and the material of Quantum Well uses indium nitride
Gallium, Quantum Well with a thickness of 3nm, the material that quantum is built uses gallium nitride, quantum build with a thickness of 15nm；P type semiconductor layer 50
Material use the gallium nitride of p-type doping, with a thickness of 450nm, the doping concentration of P-type dopant is 5*1019cm-3。
Chip is made in above-mentioned epitaxial wafer, with n type semiconductor layer by one with a thickness of 3 μm, doped with concentration be 5*
1018cm-3N type dopant GaN layer composition and the identical epitaxial wafer of other layers of structure made of chip compare, luminous efficiency
Improve 3%~4%.
A kind of specific implementation of gallium nitride based LED epitaxial slice shown in FIG. 1 includes: substrate 10, buffer layer 20, N
Type semiconductor layer 30, active layer 40 and p type semiconductor layer 50, buffer layer 20, n type semiconductor layer 30, active layer 40 and p-type are partly led
Body layer 50 is sequentially laminated on substrate 10.Wherein, the material of substrate 10 uses sapphire；The material of buffer layer 20 is using nitridation
Gallium, with a thickness of 25nm；N type semiconductor layer 30 includes alternately stacked 30 undoped Sc0.5Al0.5N layers and 30 n-type dopings
GaN layer, Sc0.5Al0.5N layers with a thickness of 2nm, GaN layer with a thickness of 18nm, the doping concentration of N type dopant is in GaN layer
5*1018cm-3；Active layer 40 includes that alternately stacked 8 Quantum Well and 8 quantum are built, and the material of Quantum Well uses indium nitride
Gallium, Quantum Well with a thickness of 3nm, the material that quantum is built uses gallium nitride, quantum build with a thickness of 15nm；P type semiconductor layer 50
Material use the gallium nitride of p-type doping, with a thickness of 450nm, the doping concentration of P-type dopant is 5*1019cm-3。
Chip is made in above-mentioned epitaxial wafer, with n type semiconductor layer by one with a thickness of 3 μm, doped with concentration be 5*
1018cm-3N type dopant GaN layer composition and the identical epitaxial wafer of other layers of structure made of chip compare, luminous efficiency
Improve 1%~2%.
The embodiment of the invention provides a kind of preparation methods of gallium nitride based LED epitaxial slice, are suitable for preparation figure
LED epitaxial slice shown in 1.Fig. 3 is a kind of gallium nitride based LED epitaxial slice provided in an embodiment of the present invention
The flow chart of preparation method, referring to Fig. 3, which includes:
Step 201: a substrate is provided.
Optionally, which may include:
Controlled at 1000 DEG C~1200 DEG C (preferably 1100 DEG C), in hydrogen atmosphere to substrate carry out 6 minutes~
It makes annealing treatment within 10 minutes (preferably 8 minutes)；
Nitrogen treatment is carried out to substrate.
The surface for cleaning substrate through the above steps avoids being conducive to the life for improving epitaxial wafer in impurity incorporation epitaxial wafer
Long quality.
Step 202: successively grown buffer layer, n type semiconductor layer, active layer and p type semiconductor layer on substrate.
In the present embodiment, n type semiconductor layer includes the nitridation of multiple undoped scandium nitride aluminium layers and multiple n-type dopings
Gallium layer, multiple scandium nitride aluminium layers and the alternately laminated setting of multiple gallium nitride layers.
Optionally, the growth temperature of n type semiconductor layer can be 1000 DEG C~1200 DEG C, preferably 1100 DEG C.Using height
Temperature growth, the crystal quality of n type semiconductor layer is preferable, is conducive to the luminous efficiency for improving LED.
Preferably, the growth pressure of n type semiconductor layer can be 100torr~500torr, preferably 300torr.With N
The growth temperature of type semiconductor layer matches, so that the crystal quality of n type semiconductor layer is preferable, is conducive to the luminous effect for improving LED
Rate.
Specifically, which may include:
The first step, controlled at 400 DEG C~600 DEG C (preferably 500 DEG C), pressure is that 400torr~600torr is (excellent
It is selected as 500torr), grown buffer layer on substrate；
Second step grows n type semiconductor layer on the buffer layer；
Third step grows active layer on n type semiconductor layer；Wherein, the growth temperature of Quantum Well is 720 DEG C~829 DEG C
(preferably 770 DEG C), pressure are 100torr~500torr (preferably 300torr)；Quantum build growth temperature be 850 DEG C~
959 DEG C (preferably 900 DEG C), pressure is 100torr~500torr (preferably 300torr)；
4th step, controlled at 850 DEG C~1080 DEG C (preferably 950 DEG C), pressure is that 100torr~300torr is (excellent
It is selected as 200torr), the growing P-type semiconductor layer on active layer.
Optionally, after the first step, which can also include:
Controlled at 1000 DEG C~1200 DEG C (preferably 1100 DEG C), pressure be 400torr~600torr (preferably
500torr), the in-situ annealing carried out 5 minutes~10 minutes (preferably 8 minutes) to buffer layer is handled.
Optionally, before second step, which can also include:
Undoped gallium nitride layer is grown on the buffer layer.
Correspondingly, n type semiconductor layer is grown on undoped gallium nitride layer.
Specifically, undoped gallium nitride layer is grown on the buffer layer, may include:
Controlled at 1000 DEG C~1100 DEG C (preferably 1050 DEG C), pressure be 100torr~500torr (preferably
300torr), undoped gallium nitride layer is grown on the buffer layer.
Optionally, before third step, which can also include:
The growth stress releasing layer on n type semiconductor layer.
Correspondingly, active layer is grown on stress release layer.
Specifically, the growth stress releasing layer on n type semiconductor layer may include:
Controlled at 800 DEG C~1100 DEG C (preferably 950 DEG C), pressure be 100torr~500torr (preferably
300torr), the growth stress releasing layer on n type semiconductor layer.
Optionally, before the 4th step, which can also include:
Electronic barrier layer is grown on active layer.
Correspondingly, p type semiconductor layer is grown on electronic barrier layer.
Specifically, electronic barrier layer is grown on active layer, may include:
Controlled at 850 DEG C~1080 DEG C (preferably 950 DEG C), pressure be 200torr~500torr (preferably
350torr), electronic barrier layer is grown on active layer.
Preferably, before growing electronic barrier layer on active layer, which can also include:
The growing low temperature P-type layer on active layer.
Correspondingly, electronic barrier layer is grown in low temperature P-type layer.
Specifically, the growing low temperature P-type layer on active layer may include:
Controlled at 500 DEG C~800 DEG C (preferably 675 DEG C), pressure be 50torr~500torr (preferably
300torr), the growing low temperature P-type layer on active layer.
Optionally, after the 5th step, which can also include:
The growing P-type contact layer on p type semiconductor layer.
Specifically, the growing P-type contact layer on p type semiconductor layer may include:
Controlled at 800 DEG C~1050 DEG C (preferably 925 DEG C), pressure be 100torr~300torr (preferably
200torr), the growing P-type contact layer on p type semiconductor layer.
It should be noted that after above-mentioned epitaxial growth terminates, can first by temperature be reduced to 650 DEG C~850 DEG C (preferably
It is 750 DEG C), the annealing of 5 minutes~15 minutes (preferably 10 minutes) is carried out to epitaxial wafer in nitrogen atmosphere, then again
The temperature of epitaxial wafer is reduced to room temperature.
Control temperature, pressure each mean temperature, pressure in the reaction chamber of control growth epitaxial wafer, and specially metal is organic
Compound chemical gaseous phase deposition (English: Metal-organic Chemical Vapor Deposition, referred to as: MOCVD) set
Standby reaction chamber.Using trimethyl gallium or triethyl-gallium as gallium source when realization, high-purity ammonia is as nitrogen source, and trimethyl indium is as indium
Source, trimethyl aluminium is as silicon source, and for scandium phosphino- arbine complex as scandium source, N type dopant selects silane, and P-type dopant is selected
Two luxuriant magnesium.
The foregoing is merely presently preferred embodiments of the present invention, is not intended to limit the invention, it is all in spirit of the invention and
Within principle, any modification, equivalent replacement, improvement and so on be should all be included in the protection scope of the present invention.
Claims (10)
1. a kind of gallium nitride based LED epitaxial slice, the gallium nitride based LED epitaxial slice includes substrate, buffering
Layer, n type semiconductor layer, active layer and p type semiconductor layer, the buffer layer, the n type semiconductor layer, the active layer and institute
It states p type semiconductor layer to stack gradually over the substrate, which is characterized in that the n type semiconductor layer includes multiple undoped
The gallium nitride layer of scandium nitride aluminium layer and multiple n-type dopings, multiple scandium nitride aluminium layers and multiple gallium nitride layer alternating layers
Folded setting.
2. gallium nitride based LED epitaxial slice according to claim 1, which is characterized in that the scandium nitride aluminium layer is
ScxAl1-xN layers, 0 < x < 0.6.
3. gallium nitride based LED epitaxial slice according to claim 1 or 2, which is characterized in that the gallium nitride layer
5 times~20 times of the thickness with a thickness of the scandium nitride aluminium layer.
4. gallium nitride based LED epitaxial slice according to claim 1 or 2, which is characterized in that the N-type semiconductor
Layer with a thickness of 0.5 μm~5 μm.
5. gallium nitride based LED epitaxial slice according to claim 4, which is characterized in that the scandium nitride aluminium layer and
The quantity of the gallium nitride layer is L a, and 10≤L≤30 and L are integer.
6. gallium nitride based LED epitaxial slice according to claim 5, which is characterized in that the scandium nitride aluminium
The sum of thickness of layer and a gallium nitride layer is 20nm~250nm.
7. gallium nitride based LED epitaxial slice according to claim 1 or 2, which is characterized in that the gallium nitride base
LED epitaxial slice further includes electronic barrier layer, and the electronic barrier layer setting is partly led in the active layer and the p-type
Between body layer, the electronic barrier layer includes scandium nitride aluminium layer.
8. a kind of preparation method of gallium nitride based LED epitaxial slice, which is characterized in that the preparation method includes:
One substrate is provided；
Successively grown buffer layer, n type semiconductor layer, active layer and p type semiconductor layer over the substrate；
Wherein, the n type semiconductor layer includes the gallium nitride layer of multiple undoped scandium nitride aluminium layers and multiple n-type dopings, more
A scandium nitride aluminium layer and multiple alternately laminated settings of the gallium nitride layer.
9. preparation method according to claim 8, which is characterized in that the growth temperature of the n type semiconductor layer is 1000
DEG C~1200 DEG C.
10. preparation method according to claim 9, which is characterized in that the growth pressure of the n type semiconductor layer is
100torr~500torr.
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| CN114256395A (en) * | 2022-03-01 | 2022-03-29 | 江西兆驰半导体有限公司 | LED epitaxial wafer, epitaxial growth method and LED chip |
| CN116581018A (en) * | 2023-07-12 | 2023-08-11 | 江西兆驰半导体有限公司 | Composite buffer layer, preparation method thereof, epitaxial wafer and high-electron-mobility transistor |
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| CN114256395A (en) * | 2022-03-01 | 2022-03-29 | 江西兆驰半导体有限公司 | LED epitaxial wafer, epitaxial growth method and LED chip |
| CN116581018A (en) * | 2023-07-12 | 2023-08-11 | 江西兆驰半导体有限公司 | Composite buffer layer, preparation method thereof, epitaxial wafer and high-electron-mobility transistor |
| CN116581018B (en) * | 2023-07-12 | 2023-10-20 | 江西兆驰半导体有限公司 | Composite buffer layer, preparation method thereof, epitaxial wafer and high-electron-mobility transistor |
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