CN106711299A - Epitaxial wafer for light emitting diodes and manufacturing method thereof - Google Patents
Epitaxial wafer for light emitting diodes and manufacturing method thereof Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 239000000758 substrate Substances 0.000 claims abstract description 13
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 12
- 239000010980 sapphire Substances 0.000 claims abstract description 12
- 230000000903 blocking effect Effects 0.000 claims abstract 3
- 238000002360 preparation method Methods 0.000 claims description 20
- 230000004888 barrier function Effects 0.000 claims description 19
- 239000002019 doping agent Substances 0.000 claims description 14
- 239000000203 mixture Substances 0.000 claims description 12
- 239000003795 chemical substances by application Substances 0.000 claims 2
- 239000004575 stone Substances 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 abstract description 7
- 238000003780 insertion Methods 0.000 abstract description 5
- 230000037431 insertion Effects 0.000 abstract description 5
- 230000005540 biological transmission Effects 0.000 abstract description 4
- 230000006911 nucleation Effects 0.000 abstract 1
- 238000010899 nucleation Methods 0.000 abstract 1
- 238000004381 surface treatment Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 description 16
- 230000000694 effects Effects 0.000 description 7
- 230000003287 optical effect Effects 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 5
- 238000005240 physical vapour deposition Methods 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 239000013256 coordination polymer Substances 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000000605 extraction Methods 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 229910002704 AlGaN Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000004040 coloring Methods 0.000 description 1
- 239000008358 core component Substances 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000007792 gaseous phase Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
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- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
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Abstract
The invention discloses an epitaxial wafer for light emitting diodes and a manufacturing method thereof, and belongs to the technical field of semiconductors. The epitaxial wafer comprises a sapphire substrate, and a buffer layer, a nucleation layer, an undoped GaN layer, an N-type layer, a multi-quantum-well layer, an electron blocking layer, an insertion layer and a P-type layer which are stacked on the sapphire substrate in turn, wherein the insertion layer is a super lattice structure composed of MgN layers and P-type doped GaN layers stacked alternately. According to the invention, as the insertion layer is arranged between the electron blocking layer and the P-type layer and the insertion layer is a super lattice structure composed of MgN layers and P-type doped GaN layers stacked alternately, the MgN layers can carry out surface treatment on the P-type layer to get a rough surface, light scatters on the interface of the rough semiconductor surface and air, light satisfying the law of total reflection changes direction, total reflection of light inside LED is damaged, the light output efficiency is improved, the chance of transmission is increased, and the external quantum efficiency of light is improved.
Description
Technical field
The present invention relates to technical field of semiconductors, more particularly to a kind of epitaxial wafer of light emitting diode and preparation method thereof.
Background technology
Light emitting diode (English：Light Emitting Diode, referred to as：LED) there is small volume, power consumption is low, make
With long lifespan, it is environmentally friendly and sturdy and durable the advantages of, in recent years in fields such as traffic instruction, indoor and outdoor total colouring, illuminations
Have a wide range of applications.
The core component of LED is chip, and chip includes epitaxial wafer and the electrode on epitaxial wafer.GaN base LED
Generally comprise substrate and the cushion, layer of undoped gan, N-type layer, multiple quantum well layer and the p-type that are sequentially laminated on substrate
Layer.The electronics of N-type layer and the hole injection multiple quantum well layer recombination luminescence of P-type layer.
Realize it is of the invention during, inventor find prior art at least there is problems with：
The refractive index of GaN and the refractive index of air are very big, and the light major part light that multiple quantum well layer sends all is limited
In GaN, the external quantum efficiency of LED is relatively low.Although the internal quantum efficiency of LED has reached more than 80%, industrialization at present
LED luminous efficiencies there was only 150lm/W or so.
The content of the invention
In order to solve problem of the prior art, the epitaxial wafer and its system of a kind of light emitting diode are the embodiment of the invention provides
Make method.The technical scheme is as follows：
On the one hand, a kind of epitaxial wafer of light emitting diode is the embodiment of the invention provides, the epitaxial wafer includes sapphire
Substrate and the cushion being sequentially laminated in the Sapphire Substrate, nucleating layer, layer of undoped gan, N-type layer, MQW
Layer, electronic barrier layer, P-type layer, the epitaxial wafer also include the insertion being layered between the electronic barrier layer and the P-type layer
Layer, the insert layer is the superlattice structure of the GaN layer composition of alternately laminated MgN layers and p-type doping.
Alternatively, thickness of the thickness of the insert layer more than the P-type layer.
Alternatively, the thickness of the insert layer is less than 100nm.
Alternatively, the doping concentration of P-type dopant is more than the concentration of P-type dopant in the P-type layer in the insert layer.
Alternatively, in the GaN layer of each layer p-type doping P-type dopant doping concentration along the epitaxial wafer stacking
Successively increase in direction.
Alternatively, in the GaN layer of each layer p-type doping P-type dopant doping concentration along the epitaxial wafer stacking
Successively reduce in direction.
On the other hand, a kind of preparation method of the epitaxial wafer of light emitting diode, the making be the embodiment of the invention provides
Method includes：
Grown buffer layer, nucleating layer, layer of undoped gan, N-type layer, multiple quantum well layer, electronics successively on a sapphire substrate
Barrier layer, insert layer, P-type layer；
Wherein, the insert layer is the superlattice structure of the GaN layer composition of alternately laminated MgN layers and p-type doping.
Alternatively, growth temperature of the growth temperature of the insert layer less than the P-type layer.
Alternatively, the growth pressure of the GaN layer of the p-type doping is 100~900torr.
Alternatively, described MgN layers growth pressure is 300~900torr.
The beneficial effect that technical scheme provided in an embodiment of the present invention is brought is：
By setting insert layer between electronic barrier layer and P-type layer, insert layer is that alternately laminated MgN layers and p-type are mixed
The superlattice structure of miscellaneous GaN layer composition, MgN layers is surface-treated to P-type layer, obtains rough surface, makes light coarse
Semiconductor surface and Air Interface are scattered, and the light for meeting total reflection law changes direction, and destruction light is complete inside LED
Reflection, improving extraction efficiency, and then increase the chance of transmission, improve the external quantum efficiency of light.And epitaxial layer can be improved
Crystal mass, improves the reliability and stability of device.
Brief description of the drawings
Technical scheme in order to illustrate more clearly the embodiments of the present invention, below will be to that will make needed for embodiment description
Accompanying drawing is briefly described, it should be apparent that, drawings in the following description are only some embodiments of the present invention, for
For those of ordinary skill in the art, on the premise of not paying creative work, other can also be obtained according to these accompanying drawings
Accompanying drawing.
Fig. 1 is a kind of structural representation of the epitaxial wafer of light emitting diode that the embodiment of the present invention one is provided；
Fig. 2 is that a kind of flow of the preparation method of the epitaxial wafer of light emitting diode that the embodiment of the present invention two is provided is illustrated
Figure.
Specific embodiment
To make the object, technical solutions and advantages of the present invention clearer, below in conjunction with accompanying drawing to embodiment party of the present invention
Formula is described in further detail.
Embodiment one
A kind of epitaxial wafer of light emitting diode is the embodiment of the invention provides, referring to Fig. 1, the epitaxial wafer is served as a contrast including sapphire
Bottom 1 and the cushion 2 being sequentially laminated in Sapphire Substrate 1, nucleating layer 3, layer of undoped gan 4, N-type layer 5, MQW
Layer 6, electronic barrier layer 7, insert layer 8, P-type layer 9.
In the present embodiment, as shown in figure 1, insert layer 8 is 82 groups of the GaN layer that alternately laminated MgN layers 81 and p-type are adulterated
Into superlattice structure.
Alternatively, the thickness of insert layer can be more than the thickness of P-type layer.
Alternatively, the thickness of insert layer can be less than 100nm.
Alternatively, the doping concentration of P-type dopant can be more than the concentration of P-type dopant in P-type layer in insert layer.
In a kind of implementation of the present embodiment, the doping concentration of P-type dopant can in the GaN layer of each layer p-type doping
Successively increased with the stacked direction along epitaxial wafer.
In another implementation of the present embodiment, the doping concentration of P-type dopant in the GaN layer of each layer p-type doping
Can successively be reduced along the stacked direction of epitaxial wafer.
Specifically, cushion can be AlN layer, and nucleating layer can be the GaN layer of three dimensional growth, and layer of undoped gan can be with
Be the GaN layer of two-dimensional growth, N-type layer can be the GaN layer of n-type doping, multiple quantum well layer can for InGaN quantum well layers and
The superlattice structure of the alternately laminated composition of GaN quantum barrier layers, electronic barrier layer can be the AlGaN layer of p-type doping, and P-type layer can
Think the GaN layer of p-type doping.
The embodiment of the present invention is alternately laminated by setting insert layer, insert layer between electronic barrier layer and P-type layer
The superlattice structure of the GaN layer composition that MgN layers and p-type are adulterated, MgN layers is surface-treated to P-type layer, obtains rough surface,
Light is set to be scattered in coarse semiconductor surface and Air Interface, the light for meeting total reflection law changes direction, destroys light
Total reflection inside LED, improving extraction efficiency, and then increase the chance of transmission, improve the external quantum efficiency of light.And can be with
Improve the crystal mass of epitaxial layer, improve the reliability and stability of device.
Embodiment two
The embodiment of the invention provides a kind of preparation method of the epitaxial wafer of light emitting diode, it is adaptable to make embodiment one
The epitaxial wafer of offer, referring to Fig. 2, the preparation method includes：
Step 201：Grown buffer layer on a sapphire substrate.
Specifically, cushion can be AlN layers.
Step 202：Nucleating layer is grown on the buffer layer.
Specifically, nucleating layer can be the GaN layer of three dimensional growth.
Step 203：Layer of undoped gan is grown on nucleating layer.
Specifically, layer of undoped gan can be the GaN layer of two-dimensional growth.
Step 204：N-type layer is grown in layer of undoped gan.
Specifically, N-type layer can be the GaN layer of n-type doping.
Step 205：Multiple quantum well layer is grown in N-type layer.
Specifically, multiple quantum well layer can be the superlattices of InGaN quantum well layers and the alternately laminated composition of GaN quantum barrier layers
Structure.
Step 206：Electronic barrier layer is grown on multiple quantum well layer.
Specifically, electronic barrier layer can be the AlGaN layer of p-type doping.
Step 207：Insert layer is grown on electronic barrier layer.
In the present embodiment, insert layer is the superlattice structure of the GaN layer composition of alternately laminated MgN layers and p-type doping.
Alternatively, the thickness of insert layer can be more than the thickness of P-type layer.
Alternatively, the thickness of insert layer can be less than 100nm.
Alternatively, the doping concentration of P-type dopant can be more than the concentration of P-type dopant in P-type layer in insert layer.
In a kind of implementation of the present embodiment, the doping concentration of P-type dopant can in the GaN layer of each layer p-type doping
Successively increased with the stacked direction along epitaxial wafer.
In another implementation of the present embodiment, the doping concentration of P-type dopant in the GaN layer of each layer p-type doping
Can successively be reduced along the stacked direction of epitaxial wafer.
Step 208：The growing P-type layer in insert layer.
Specifically, P-type layer can be the GaN layer of p-type doping.
The embodiment of the present invention is alternately laminated by setting insert layer, insert layer between electronic barrier layer and P-type layer
The superlattice structure of the GaN layer composition that MgN layers and p-type are adulterated, MgN layers is surface-treated to P-type layer, obtains rough surface,
Light is set to be scattered in coarse semiconductor surface and Air Interface, the light for meeting total reflection law changes direction, destroys light
Total reflection inside LED, improving extraction efficiency, and then increase the chance of transmission, improve the external quantum efficiency of light.And can be with
Improve the crystal mass of epitaxial layer, improve the reliability and stability of device.
Embodiment three
The embodiment of the invention provides a kind of preparation method of the epitaxial wafer of light emitting diode, the making that the present embodiment is provided
Method is implementing for the preparation method that embodiment two is provided.Specifically, the preparation method includes：
Step 301：Sapphire Substrate is placed on physical vapour deposition (PVD) (English：Physical Vapor
Deposition, referred to as：PVD) in reaction chamber, growth thickness is AlN layers of 25nm, forms cushion.
Step 302：Sapphire Substrate is transferred to metallo-organic compound chemical gaseous phase deposition (English：
Meta1Organic Chemical Vapor Deposition, referred to as：MOCVD) in reaction chamber, control temperature for 1020 DEG C,
Pressure is 400torr, and growth thickness is the nucleating layer of 800nm in pure hydrogen atmosphere.
Step 303：It is 600torr for 1100 DEG C, pressure to control temperature, and growth thickness is 1 μm of layer of undoped gan.
Step 304：Control pressure is 100torr, and the speed growth thickness with 3.4 μm/h is 2.5 μm of N-type layer.
Step 305：Growth multiple quantum well layer.
In the present embodiment, multiple quantum well layer is In0.2Ga0.8N quantum well layers and the alternately laminated composition of GaN quantum barrier layers
Superlattice structure.The number of plies and In of GaN quantum barrier layers0.2Ga0.8The number of plies of N quantum well layers is identical, In0.2Ga0.8N quantum well layers
The number of plies is 6~10 layers.In0.2Ga0.8The thickness of N quantum well layers is 2nm, and the thickness of GaN quantum barrier layers is 13.5nm.
Step 306：With the speed growth thickness of 0.3 μm/h it is the electronic barrier layer of 70nm in pure nitrogen gas atmosphere.
Step 307：Growth insert layer.
In the present embodiment, insert layer is the superlattice structure of the GaN layer composition of alternately laminated MgN layers and p-type doping.
The number of plies of the number of plies with MgN layers of the GaN layer of p-type doping is identical, and MgN layers of the number of plies is 10 layers.
Wherein, when growing MgN layers, stopping is passed through TMGa, is passed through CP2Mg and NH3, control temperature for 900 DEG C, pressure be
200torr, growth thickness is MgN layer of 50nm in the mixed atmosphere of nitrogen and hydrogen.During each layer MgN layers of growth, CP2Mg's
Intake keeps constant.
Step 308：TMGa is passed through, it is 200torr for 950 DEG C, pressure to control temperature, in nitrogen and the mixed atmosphere of hydrogen
Middle growth thickness is the P-type layer of 20nm.
After the epitaxial wafer that will be obtained is through semiconducter process such as over cleaning, plated film, photoetching, size is divided into for 4*
The LED chip of 5mil.By after chip testing, forward voltage Vf is 2.95V, and electric current is 5mA, the antistatic effect of Human Body Model
4000V is promoted to from 2000V, the single optical output power of small chip is improved to 5.5mW from 4.5mW.
Example IV
A kind of preparation method of the epitaxial wafer of light emitting diode is the embodiment of the invention provides, the system provided with embodiment three
The difference for making method is, during each layer MgN layers of growth, CP2The intake of Mg successively increases.Add by identical semiconductor
Work technique and chip testing, the antistatic effect of Human Body Model are promoted to 4000V, the single light output work(of small chip from 2000V
Rate is improved to 5.7mW from 4.5mW.
Embodiment five
A kind of preparation method of the epitaxial wafer of light emitting diode is the embodiment of the invention provides, the system provided with embodiment three
The difference for making method is that the number of plies of the number of plies with MgN layers of the GaN layer of p-type doping is identical, and MgN layers of the number of plies is 15 layers.
By identical semiconducter process and chip testing, the antistatic effect of Human Body Model is promoted to 4000V from 2000V, single
The optical output power of small chip is improved to 5.5mW from 4.5mW.
Embodiment six
A kind of preparation method of the epitaxial wafer of light emitting diode is the embodiment of the invention provides, the system provided with embodiment three
The difference for making method is that the number of plies of the number of plies with MgN layers of the GaN layer of p-type doping is identical, and MgN layers of the number of plies is 5 layers.
By identical semiconducter process and chip testing, the antistatic effect of Human Body Model is promoted to 4000V from 2000V, single
The optical output power of small chip is improved to 5.2mW from 4.5mW.
Embodiment seven
A kind of preparation method of the epitaxial wafer of light emitting diode is the embodiment of the invention provides, the system provided with embodiment three
The difference for making method is that the growth pressure of the GaN layer of p-type doping is 150torr, and MgN layers of growth pressure is
500torr.By identical semiconducter process and chip testing, the antistatic effect of Human Body Model is promoted to from 2000V
4000V, the single optical output power of small chip is improved to 5.7mW from 4.5mW.
Embodiment eight
A kind of preparation method of the epitaxial wafer of light emitting diode is the embodiment of the invention provides, the system provided with embodiment three
The difference for making method is that the thickness of insert layer is 70nm.By identical semiconducter process and chip testing, people
The antistatic effect of bulk-mode is promoted to 4000V from 2000V, the single optical output power of small chip from 4.5mW improve to
5.1mW。
Embodiment nine
A kind of preparation method of the epitaxial wafer of light emitting diode is the embodiment of the invention provides, the system provided with embodiment three
The difference for making method is that the thickness of insert layer is 30nm.By identical semiconducter process and chip testing, people
The antistatic effect of bulk-mode is promoted to 4000V from 2000V, the single optical output power of small chip from 4.5mW improve to
6.0mW。
The embodiments of the present invention are for illustration only, and the quality of embodiment is not represented.
The foregoing is only presently preferred embodiments of the present invention, be not intended to limit the invention, it is all it is of the invention spirit and
Within principle, any modification, equivalent substitution and improvements made etc. should be included within the scope of the present invention.
Claims (10)
1. a kind of epitaxial wafer of light emitting diode, the epitaxial wafer includes Sapphire Substrate and is sequentially laminated on described blue precious
Cushion, nucleating layer on stone lining bottom, layer of undoped gan, N-type layer, multiple quantum well layer, electronic barrier layer, P-type layer, its feature
It is that the epitaxial wafer also includes the insert layer being layered between the electronic barrier layer and the P-type layer, the insert layer is
The superlattice structure of the GaN layer composition that alternately laminated MgN layers and p-type are adulterated.
2. epitaxial wafer according to claim 1, it is characterised in that thickness of the thickness of the insert layer more than the P-type layer
Degree.
3. epitaxial wafer according to claim 1 and 2, it is characterised in that the thickness of the insert layer is less than 100nm.
4. epitaxial wafer according to claim 1 and 2, it is characterised in that the doping concentration of P-type dopant in the insert layer
More than the concentration of P-type dopant in the P-type layer.
5. epitaxial wafer according to claim 1 and 2, it is characterised in that p-type doping in the GaN layer of each layer p-type doping
The doping concentration of agent successively increases along the stacked direction of the epitaxial wafer.
6. epitaxial wafer according to claim 1 and 2, it is characterised in that p-type doping in the GaN layer of each layer p-type doping
The doping concentration of agent is successively reduced along the stacked direction of the epitaxial wafer.
7. a kind of preparation method of the epitaxial wafer of light emitting diode, it is characterised in that the preparation method includes：
Grown buffer layer, nucleating layer, layer of undoped gan, N-type layer, multiple quantum well layer, electronic blocking successively on a sapphire substrate
Layer, insert layer, P-type layer；
Wherein, the insert layer is the superlattice structure of the GaN layer composition of alternately laminated MgN layers and p-type doping.
8. preparation method according to claim 7, it is characterised in that the growth temperature of the insert layer is less than the p-type
The growth temperature of layer.
9. the preparation method according to claim 7 or 8, it is characterised in that the growth pressure of the GaN layer of the p-type doping
It is 100~900torr.
10. the preparation method according to claim 7 or 8, it is characterised in that described MgN layers growth pressure is 300~
900torr。
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107799636A (en) * | 2017-10-27 | 2018-03-13 | 厦门乾照光电股份有限公司 | A kind of ultraviolet LED and preparation method thereof |
| CN108123017A (en) * | 2017-12-27 | 2018-06-05 | 福建兆元光电有限公司 | Light emitting semiconductor device |
| CN109103303A (en) * | 2018-06-29 | 2018-12-28 | 华灿光电（浙江）有限公司 | A kind of preparation method and LED epitaxial slice of LED epitaxial slice |
| WO2022056780A1 (en) * | 2020-09-17 | 2022-03-24 | 重庆康佳光电技术研究院有限公司 | P-type semiconductor layer growing method, led epitaxial layer, chip, and electronic device |
| CN115312643A (en) * | 2022-08-05 | 2022-11-08 | 淮安澳洋顺昌光电技术有限公司 | LED epitaxial wafer with insertion layer and preparation method thereof |
| CN116072784A (en) * | 2023-03-29 | 2023-05-05 | 江西兆驰半导体有限公司 | Deep ultraviolet light-emitting diode epitaxial wafer, preparation method thereof and LED |
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