CN1949549A - LED chip - Google Patents
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- CN1949549A CN1949549A CNA200510112798XA CN200510112798A CN1949549A CN 1949549 A CN1949549 A CN 1949549A CN A200510112798X A CNA200510112798X A CN A200510112798XA CN 200510112798 A CN200510112798 A CN 200510112798A CN 1949549 A CN1949549 A CN 1949549A
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Abstract
The invention is an LED chip, comprising substrate, semiconductor layer, micro-roughened layer, first electrode and second electrode, where the semiconductor layer is arranged on the substrate; and the micro-roughened layer is arranged in the semiconductor layer, between the semiconductor layer and the substrate, or arranged on the top surface of the semiconductor layer; the first and second electrodes are arranged on the semiconductor layer and electrically insulated. Thus, the LED chip can have better light emitting efficiency.
Description
Technical field
(Light Emitting Diode LED), and is particularly related to a kind of light-emitting diode chip for backlight unit with high-luminous-efficiency to the present invention relates to a kind of light-emitting diode.
Background technology
Light-emitting diode belongs to semiconductor element, and the material of its luminescence chip generally can use III-V family chemical element, as: gallium phosphide (GaP), GaAs (GaAs), gallium nitride compound semiconductors such as (GaN).Utilization applies electric current to these compound semiconductors, by the combination of electron hole pair, can transfer electric energy to luminous energy, and disengage with the form of photon, reaches luminous effect.Because the luminescence phenomenon of light-emitting diode is to belong to chemiluminescence, but not by adding thermoluminescence, thus the life-span of light-emitting diode be more than 100,000 hours, and need not warm up the lamp time (idling time).In addition, light-emitting diode has reaction speed and (is about 10 soon
-9Second), volume is little, power-saving, pollute low (not containing mercury), reliability height, be fit to advantages such as volume production, therefore its applicable field of institute is very extensive, as the lamp source of scanner, the backlight of LCD screen, outdoor display billboard or automobile-used lighting apparatus or the like.
The luminous efficiency of light-emitting diode chip for backlight unit depends mainly on the internal quantum (Internal Quantum Efficiency) and the external quantum efficiency (External QuantumEfficiency) of light-emitting diode chip for backlight unit.The former with the electron hole in conjunction with and to discharge the probability of photon relevant, if the easy more combination in electron hole, then internal quantum is high more.The absorption that the latter then is not subjected to light-emitting diode itself with photon with influence, and it is relevant to extraneous probability successfully to break away from light-emitting diode, if multi-photon can be discharged into the external world more, then external quantum efficiency is high more.
In the known technology, light-emitting diode chip for backlight unit mainly be by the thin layer of several layers of different materials (as P, n type semiconductor layer and luminescent layer) formation, and photon need could break away from light-emitting diode by thin layer layer by layer, so external quantum efficiency depends primarily on form and refractive index between each thin layer.For example, when the refringence between any two thin layers is excessive in the light-emitting diode chip for backlight unit, then causes photon to form total reflection easily and advance repeatedly in light-emitting diode chip for backlight unit inside.Can make that so external quantum efficiency is restricted, and can't effectively promote the luminous efficiency of light-emitting diode chip for backlight unit.
Summary of the invention
In view of this, purpose of the present invention just provides a kind of light-emitting diode chip for backlight unit with at least one little roughened layer (micro-rough layer), and this light-emitting diode chip for backlight unit has preferable luminous efficiency.
Based on above-mentioned and other purpose, the present invention proposes a kind of light-emitting diode chip for backlight unit, and it comprises substrate, semiconductor layer, little roughened layer, first electrode and second electrode.Semiconductor layer is to be positioned on the substrate, and little roughened layer is to be arranged in the semiconductor layer.First electrode and second electrode all are positioned on the semiconductor layer, wherein first electrode and the second electrode electric insulation.
In one of the present invention embodiment, semiconductor layer comprises the first type doping semiconductor layer, luminescent layer and the second type doping semiconductor layer.The first type doping semiconductor layer is to be positioned on the substrate, and luminescent layer is to be arranged on the subregion of the first type doping semiconductor layer, and the second type doping semiconductor layer is to be arranged on the luminescent layer.First electrode is electrically connected with the first type doping semiconductor layer, and second electrode is electrically connected with the second type doping semiconductor layer.
In one of the present invention embodiment, little roughened layer is for example in the first type doping semiconductor layer, between the first type doping semiconductor layer and the luminescent layer, in the luminescent layer, between luminescent layer and the second type doping semiconductor layer, or be positioned at the second type doping semiconductor layer.
In one of the present invention embodiment, the first type doping semiconductor layer is the n type semiconductor layer for example, and the second type doping semiconductor layer for example is the p type semiconductor layer.
In one of the present invention embodiment, the first type doping semiconductor layer comprises resilient coating, first contact layer and first bond course.Resilient coating is to be positioned on the substrate, and first contact layer is to be positioned on the resilient coating, and first bond course is to be positioned on first contact layer.
In one of the present invention embodiment, little roughened layer is for example between the resilient coating and first contact layer, or between first contact layer and first bond course.
In one of the present invention embodiment, the second type doping semiconductor layer comprises second bond course and second contact layer.Second bond course is to be positioned on the luminescent layer, and second contact layer is to be positioned on second bond course.
In one of the present invention embodiment, little roughened layer is for example between second bond course and second contact layer.
In one of the present invention embodiment, little roughened layer comprises silicon nitride layer or magnesium nitride layer, and wherein silicon nitride layer or magnesium nitride layer comprise the shielding pattern (mask pattern) of a plurality of random distribution.
In one of the present invention embodiment, little roughened layer comprises nitride multilayer silicon layer and nitride multilayer indium gallium layer, and wherein silicon nitride layer and gallium indium nitride layer pile up each other alternately.In addition, little roughened layer also can comprise nitride multilayer magnesium layer and nitride multilayer indium gallium layer, and wherein magnesium nitride layer and gallium indium nitride layer pile up each other alternately.
In one of the present invention embodiment, little roughened layer comprises nitride multilayer silicon layer and nitride multilayer aluminium indium gallium layer, and wherein silicon nitride layer and aluminum indium nitride gallium layer pile up each other alternately.In addition, little roughened layer also can comprise nitride multilayer magnesium layer and nitride multilayer aluminium indium gallium layer, and wherein magnesium nitride layer and aluminum indium nitride gallium layer pile up each other alternately.
Based on above-mentioned and other purpose, the present invention proposes a kind of light-emitting diode chip for backlight unit in addition, and it comprises substrate, semiconductor layer, first electrode, second electrode and little roughened layer.Semiconductor layer is to be positioned on the substrate, and first electrode and second electrode are to be positioned on the semiconductor layer, wherein first electrode and the second electrode electric insulation.Little roughened layer is to be arranged between semiconductor layer and the substrate, or is arranged at the upper surface of semiconductor layer.
In one of the present invention embodiment, little roughened layer comprises silicon nitride layer or magnesium nitride layer, and wherein silicon nitride layer or magnesium nitride layer comprise the shielding pattern (mask pattern) of a plurality of random distribution.
In one of the present invention embodiment, little roughened layer comprises nitride multilayer silicon layer and nitride multilayer indium gallium layer, and wherein silicon nitride layer and gallium indium nitride layer pile up each other alternately.In addition, little roughened layer also can comprise nitride multilayer magnesium layer and nitride multilayer indium gallium layer, and wherein magnesium nitride layer and gallium indium nitride layer pile up each other alternately.
In one of the present invention embodiment, little roughened layer comprises nitride multilayer silicon layer and nitride multilayer aluminium indium gallium layer, and wherein silicon nitride layer and aluminum indium nitride gallium layer pile up each other alternately.In addition, little roughened layer also can comprise nitride multilayer magnesium layer and nitride multilayer aluminium indium gallium layer, and wherein magnesium nitride layer and aluminum indium nitride gallium layer pile up each other alternately.
In sum, in light-emitting diode chip for backlight unit of the present invention, little roughened layer can reduce the situation of photon generation total reflection, and then improves external quantum efficiency so that light-emitting diode chip for backlight unit has preferable luminous efficiency.
State with other purpose, feature and advantage and can become apparent on the present invention for allowing, preferred embodiment cited below particularly, and conjunction with figs. are described in detail below.
Description of drawings
Figure 1A and Figure 1B are respectively the generalized section according to two light-emitting diode chip for backlight unit of first embodiment of the invention.
Fig. 2 A and Fig. 2 B are respectively the partial cutaway schematic of little roughened layer.
Fig. 3 is the part section enlarged diagram of light-emitting diode chip for backlight unit.
Fig. 4 A～4E is respectively the generalized section according to a plurality of light-emitting diode chip for backlight unit of the present invention.
Fig. 5 A～5C is respectively the generalized section according to a plurality of light-emitting diode chip for backlight unit of the present invention.
Fig. 6 A and Fig. 6 B are respectively the generalized section according to two light-emitting diode chip for backlight unit of second embodiment of the invention.
Fig. 7 is the brightness data figure of light-emitting diode chip for backlight unit known and of the present invention under different input currents.
The main element description of symbols
100,100 ', 100a, 100b, 100c, 100d, 100e, 100f, 100g, 100h, 200a, 200b: light-emitting diode chip for backlight unit
110: substrate
120: semiconductor layer
122: the first type doping semiconductor layers
122a: resilient coating
122b: first contact layer
122c: first bond course
124: luminescent layer
126: the second type doping semiconductor layers
126a: second bond course
126b: second contact layer
130: little roughened layer
132: silicon nitride layer
134: gallium indium nitride layer
136: aluminum indium nitride gallium layer
138: coarse contact layer
140: the first electrodes
150: the second electrodes
Embodiment
First embodiment
Figure 1A and Figure 1B are respectively the generalized section according to two light-emitting diode chip for backlight unit of first embodiment of the invention.Please refer to Figure 1A and Figure 1B, the light-emitting diode chip for backlight unit 100,100 ' of present embodiment comprises substrate 110, semiconductor layer 120, little roughened layer 130, first electrode 140 and second electrode 150.Semiconductor layer 120 is to be positioned on the substrate 110, and little roughened layer 130 is to be arranged in the semiconductor layer 120.First electrode 140 and second electrode 150 all are positioned on this semiconductor layer 120, wherein first electrode 140 and second electrode, 150 electric insulations.When importing forward currents to semiconductor layer 120 by first electrode 140 and second electrode 150, semiconductor layer 120 can produce photons, and little roughened layer 130 can reduce the situation of photon generation total reflection.It is extremely extraneous that so photon is easier to successfully break away from light-emitting diode chip for backlight unit 100,100 ', and then light-emitting diode chip for backlight unit 100,100 ' can have preferable luminous efficiency.
From the above, little roughened layer 130 for example is made up of silicon nitride layer 132, and its surface is through roughening treatment.The material of silicon nitride layer 132 comprises silicon nitride (Si
aN
b, 0＜a, b＜1), and its preferable thickness is between 2 ～50 , and its preferable growth temperature is between 600 ℃～1100 ℃.It should be noted that little roughened layer 130 of the present invention does not limit can only be made up of silicon nitride layer 132, below will cooperate other composition mode of the little roughened layer 130 of explanation with diagram.
Fig. 2 A and Fig. 2 B are respectively the partial cutaway schematic of little roughened layer.Please refer to Fig. 2 A, little roughened layer 130 is for example piled up each other alternately by nitride multilayer silicon layer 132 and nitride multilayer indium gallium layer 134 and short period (short period) superlattice (super lattice) structure that forms is formed.The material of silicon nitride layer 132 comprises silicon nitride (Si
aN
b, 0＜a, b＜1), and the material of gallium indium nitride layer 134 comprises InGaN (In
hGa
1-hN, 0＜h≤1).In addition, the preferable thickness of each silicon nitride layer 132 and each gallium indium nitride layer 134 is between 2 ～20 , and its preferable growth temperature is between 600 ℃～1100 ℃.What deserves to be mentioned is that it is not necessarily identical that the silicon nitride in the different silicon nitride layers 132 is formed (being a, the b in the aforementioned molecular formula), and the composition of the InGaN in the different gallium indium nitride layer 134 (being the h in the aforementioned molecular formula) is also not necessarily identical.In addition, the preferred thickness of little roughened layer 130 integral body is advisable to be no more than 200 .What deserves to be mentioned is that in other embodiments, the also available magnesium nitride layer of silicon nitride layer 132 or other similar material substitute.
Please refer to Fig. 2 B, similar aforementioned, little roughened layer 130 is for example piled up each other alternately by nitride multilayer silicon layer 132 and nitride multilayer aluminium indium gallium layer 136 and the short period superlattice structure that forms is formed.The material of silicon nitride layer 132 comprises silicon nitride (Si
aN
b, 0＜a, b＜1), and the material of aluminum indium nitride gallium layer 136 comprises aluminum indium nitride gallium (Al
mIn
nGa
1-m-nN, 0＜m, n≤1, m+n＜1).In addition, the preferable thickness of each silicon nitride layer 132 and each aluminum indium nitride gallium layer 136 is between 2 ～20 , and its preferable growth temperature is between 600 ℃～1100 ℃.What deserves to be mentioned is that it is not necessarily identical that the silicon nitride in the different silicon nitride layers 132 is formed (being a, the b in the aforementioned molecular formula), and the composition of the aluminum indium nitride gallium in the different aluminum indium nitride gallium layer 136 (being m, the n in the aforementioned molecular formula) is also not necessarily identical.In addition, the preferred thickness of little roughened layer 130 integral body is advisable to be no more than 200 .What deserves to be mentioned is that in other embodiments, the also available magnesium nitride layer of silicon nitride layer 132 or other similar material substitute.
In the above-described embodiment, little roughened layer 130 be thin layer with two kinds of different materials pile up alternately formed.Yet the present invention does not limit and can only form little roughened layer 130 with the thin layer of two kinds of different materials, and the material that does not also limit thin layer can only be silicon nitride, magnesium nitride, InGaN or aluminum indium nitride gallium.For example, the present invention can adopt the thin layer (as silicon nitride, magnesium nitride, InGaN, aluminum indium nitride gallium or other similar material etc.) of different materials more than three kinds to pile up alternately each other and the short period superlattice structure that forms is used as little roughened layer.In addition, little roughened layer 130 of the present invention does not limit yet and must pile up alternately and form with thin layer, below will cooperate other composition mode of the little roughened layer 130 of explanation with diagram.
Fig. 3 is the part section enlarged diagram of light-emitting diode chip for backlight unit.Please refer to Fig. 3, the generation type of little roughened layer 130 for example forms a silicon nitride layer 132 earlier on semiconductor layer 120, and wherein silicon nitride layer 132 is the shielding pattern (mask pattern) of a plurality of random distribution.The material of silicon nitride layer 132 comprises silicon nitride (Si
aN
b, 0＜a, b＜1), certainly, it also can adopt magnesium nitride (Mg
cN
d, 0＜c, d＜1) or the aluminum indium nitride gallium (Al of highly doped silicon and magnesium
sIn
tGa
1-s-tN, 0＜s, t≤1, s+t＜1) or the like material to replace silicon nitride.In addition, silicon nitride layer 132 (the aluminum indium nitride gallium of magnesium nitride, highly doped silicon and magnesium also together) is for example with chemistry of organometallic compound vapour deposition (Metal Organic Chemical Vapor Deposition, MOCVD) shielding pattern of formation random distribution, and its preferable thickness is between 5 ～100 , and its preferable growth temperature is between 600 ℃～1100 ℃.Then again on these shielding pattern, form coarse contact layer 138, the material of wherein coarse contact layer 138 comprises aluminum indium nitride gallium (Al
uIn
vGa
1-u-vN, 0＜u, v≤1, u+v＜1), and its preferable thickness is between 500 ～10000 , and its preferable growth temperature is between 800 ℃～1100 ℃.Coarse contact layer 138 be not direct growth on silicon nitride layer 132, but begin to grow up from semiconductor layer 120 upper surfaces that silicon nitride layer 132 does not hide, extended upward after surmounting (but covering) silicon nitride layer 132 certain altitudes and just stopped growth.So just finish the manufacturing of little roughened layer 130, can continue to form semiconductor layer 120 afterwards to finish the manufacturing of light-emitting diode chip for backlight unit.
Below with segmentation narrate light-emitting diode chip for backlight unit semiconductor layer detailed structure and with the pass of little roughened layer relative position.
Fig. 4 A～4E is respectively the generalized section according to a plurality of light-emitting diode chip for backlight unit of the present invention.Please refer to Fig. 4 A～4E, light-emitting diode chip for backlight unit 100a, 100b, 100c, 100d, 100e and aforesaid light-emitting diode chip for backlight unit 100,100 ' (shown in Figure 1A, 1B) are similar, and its difference is that the semiconductor layer 120 of light-emitting diode chip for backlight unit 100a, 100b, 100c, 100d, 100e can further comprise the first type doping semiconductor layer 122, luminescent layer 124 and the second type doping semiconductor layer 126.The first type doping semiconductor layer 122 is to be positioned on the substrate 110, and luminescent layer 124 is to be arranged on the subregion of the first type doping semiconductor layer 122, and the second type doping semiconductor layer 126 is to be arranged on the luminescent layer 124.First electrode 140 is electrically connected with the first type doping semiconductor layer 122, and second electrode 150 is electrically connected with the second type doping semiconductor layer 126.
Further, shown in Fig. 4 A, little roughened layer 130 is to be positioned at the first type doping semiconductor layer 122; Shown in Fig. 4 B, little roughened layer 130 is between the first type doping semiconductor layer 122 and luminescent layer 124; Shown in Fig. 4 C, little roughened layer 130 is to be positioned at luminescent layer 124; Shown in Fig. 4 D, little roughened layer 130 is between the luminescent layer 124 and the second type doping semiconductor layer 126; And shown in Fig. 4 E, little roughened layer 130 is to be positioned at the second type doping semiconductor layer 126.
Fig. 5 A～5C is respectively the generalized section according to a plurality of light-emitting diode chip for backlight unit of the present invention.Please refer to Fig. 5 A and Fig. 5 B, light-emitting diode chip for backlight unit 100f, 100g are similar to aforesaid light-emitting diode chip for backlight unit 100a (shown in Fig. 4 A), and its difference is that the first type doping semiconductor layer 122 of light-emitting diode chip for backlight unit 100f, 100g can further comprise resilient coating 122a, the first contact layer 122b and the first bond course 122c.Resilient coating 122a is positioned on the substrate 110, and the first contact layer 122b is positioned on the resilient coating 122a, and the first bond course 122c is positioned on the first contact layer 122b.
Further, shown in Fig. 5 A, little roughened layer 130 is between the resilient coating 122a and the first contact layer 122b; Shown in Fig. 5 B, little roughened layer 130 is between the first contact layer 122b and the first bond course 122c.
Please refer to Fig. 5 C, light-emitting diode chip for backlight unit 100h is similar to aforesaid light-emitting diode chip for backlight unit 100e (shown in Fig. 4 E), and its difference is that the second type doping semiconductor layer 126 of light-emitting diode chip for backlight unit 100h can further comprise the second bond course 126a and the second contact layer 126b.The second bond course 126a is positioned on the luminescent layer 124, and the second contact layer 126b is positioned on the second bond course 126a.In addition, little roughened layer 130 is between the second bond course 126a and two contact layer 126b.
In aforesaid a plurality of light-emitting diode chip for backlight unit, when passing to forward current by first electrode 140 and 150 pairs of semiconductor layers 120 of second electrode, electronics and hole can be passed to combination in the luminescent layer 124 by the first type doping semiconductor layer 122 and the second type doping semiconductor layer 126 respectively, and release energy with the kenel of photon.Owing to be provided with little roughened layer 130 in the semiconductor layer 120, therefore can reduce photon generation total reflection and advance repeatedly in semiconductor layer 120 inside, so can make photon be easier to successfully break away from light-emitting diode chip for backlight unit.
Below segmentation is described in detail the material and the form of substrate and each thin layer of aforementioned a plurality of light-emitting diode in detail.
The material of substrate 110 comprises aluminium oxide (Sapphire), carborundum (6H-SiC or 4H-SiC), silicon (Si), zinc oxide (ZnO), GaAs (GaAs), spinelle (MgAl
2O
4) or other lattice constant approach the monocrystalline oxide of nitride-based semiconductor, and the material of substrate 110 to form form for example be C-Plane, E-Plane or A-Plane.
The first type doping semiconductor layer 122 is different with the dopant profile of the second type doping semiconductor layer 126, and in the present embodiment, the first type doping semiconductor layer 122 for example is the n type semiconductor layer, and the second relative type doping semiconductor layer 126 is the p type semiconductor layer.Certainly, the dopant profile of the first type doping semiconductor layer 122 and the second type doping semiconductor layer 126 is also interchangeable.In addition, luminescent layer 124 can be by InGaN (In
aGa
1-aN) constitute, and pass through the indium gallium element of different proportion, can make it send the light of different wave length.
From the above, resilient coating 122a is for example by aluminum indium gallium nitride (Al
aGa
bIn
1-a-bN, 0≤a, b＜1, a+b≤1) constitute.The first contact layer 122b can be n type contact layer, and the first bond course 122c can be n type bond course.The second contact layer 126b can be p type contact layer, and the second bond course 126a can be p type bond course.This n type contact layer, n type bond course, p type contact layer and p type bond course for example are made of gallium nitride material, and adjust its characteristics by the kind and the concentration difference of dopant ion impurity.
Accept above-mentionedly, the material of first electrode 140 for example is aluminium (Al), platinum (Pt), palladium (Pd), cobalt (Co), molybdenum (Mo), beryllium (Be), gold (Au), titanium (Ti), chromium (Cr), tin (Sn), tantalum (Ta), titanium nitride (TiN), titanium tungsten nitride (TiWN
a), tungsten silicide (WSi
a) or other similar material, and first electrode 140 is for example constituted with the metal or alloy kenel of single or multiple lift.The material of second electrode 150 for example is nickel (Ni), platinum (Pt), cobalt (Co), palladium (Pd), beryllium (Be), gold (Au), titanium (Ti), chromium (Cr), tin (Sn), tantalum (Ta), titanium nitride (TiN), titanium tungsten nitride (TiWN
a), tungsten silicide (WSi
a) or other similar material, and second electrode 150 is for example constituted with the metal or alloy kenel of single or multiple lift.
Second embodiment
Fig. 6 A and Fig. 6 B are respectively the generalized section according to two light-emitting diode chip for backlight unit of second embodiment of the invention.Please refer to Fig. 6 A, light-emitting diode chip for backlight unit 200a and aforesaid light-emitting diode chip for backlight unit 100,100 ' (shown in Figure 1A, 1B) are similar, and its difference is that little roughened layer 130 of light-emitting diode chip for backlight unit 200a is to be arranged between semiconductor layer 120 and the substrate 110.Please refer to Fig. 6 B, light-emitting diode chip for backlight unit 200b and aforesaid light-emitting diode chip for backlight unit 100,100 ' (shown in Figure 1A, 1B) are similar, and its difference is that little roughened layer 130 of light-emitting diode chip for backlight unit 200b is the upper surfaces that are arranged at semiconductor layer 120.
Among above-mentioned light-emitting diode chip for backlight unit 200a, the 200b, little roughened layer 130 is the interfaces that are arranged between semiconductor layer 120 and substrate 100 and semiconductor layer 120 and the outside air (not shown), therefore can reduce the situation that total reflection takes place at this two interface photon, and then light-emitting diode chip for backlight unit 200a, 200b can have preferable luminous efficiency.What deserves to be mentioned is, particularly in light-emitting diode chip for backlight unit 200b, because the low energy gap characteristic of the material of little roughened layer 130, can make that the resistance between second electrode 150 and the little roughened layer 130 is lower than the resistance that (little roughened layer 130 is not set) between known second electrode 150 and the semiconductor layer 120, also so easier formation ohmic contact.
In aforementioned a plurality of light-emitting diode chip for backlight unit, the present invention can further comprise the transparency conducting layer (not shown), and wherein transparency conducting layer is to be arranged on the semiconductor layer 120, and is electrically connected with second electrode 150.Transparency conducting layer can be metal conducting layer or is transparent oxide layer.The material of metal conducting layer for example is nickel (Ni), platinum (Pt), cobalt (Co), palladium (Pd), beryllium (Be), gold (Au), titanium (Ti), chromium (Cr), tin (Sn), tantalum (Ta) or other similar material, and metal conducting layer for example is made of the metal or alloy kenel of a single or multiple lift.The material of transparent oxide layer for example is tin indium oxide (ITO), CTO, ZnO:Al, ZnGa
2O
4, SnO
2: Sb, Ga
2O
3: Sn, AgInO
2: Sn, In
2O
3: Zn, CuAlO
2, LaCuOS, NiO, CuGaO
2Or SrCu
2O
2, and transparent oxide layer for example is made of the single or multiple lift film shape.
The 3rd embodiment
In aforementioned a plurality of light-emitting diode chip for backlight unit, little roughened layer 130 is to be arranged at different position in the light-emitting diode chip for backlight unit, yet the present invention does not limit the quantity of little roughened layer 130.For example, little roughened layer 130 can be arranged at the first type doping semiconductor layer 122 and luminescent layer 124 simultaneously, and luminescent layer 124 and (as combining shown in Fig. 4 B and Fig. 4 D) between the second type doping semiconductor layer 126, produce the situation of total reflection significantly to reduce the photon that luminescent layer 124 sends.What is more, little roughened layer 130 can be arranged at any position that can be provided with in aforementioned a plurality of light-emitting diode chip for backlight unit simultaneously, so that light-emitting diode chip for backlight unit of the present invention has better luminous efficiency.
Fig. 7 is the brightness data figure of light-emitting diode chip for backlight unit known and of the present invention under different input currents, wherein known light-emitting diode chip for backlight unit is not provided with little roughened layer, and little roughened layer of the light-emitting diode chip for backlight unit of present embodiment is with nitride multilayer silicon layer and nitride multilayer indium gallium layer (In
0.2Ga
0.8N) pile up alternately each other and the short period superlattice structure that forms is formed.Please refer to Fig. 7, the luminous efficiency of light-emitting diode chip for backlight unit of the present invention is better than the luminous efficiency of known light-emitting diode chip for backlight unit, that is by the luminous efficiency that little roughened layer can improve light-emitting diode chip for backlight unit is set.
In sum, in light-emitting diode chip for backlight unit of the present invention,, can make light-emitting diode chip for backlight unit have preferable luminous efficiency because little roughened layer is set.
Though the present invention discloses as above with preferred embodiment; right its is not in order to limit the present invention; any person of ordinary skill in the field; without departing from the spirit and scope of the invention; when can doing a little change and improvement, so the present invention's protection range is as the criterion when looking the claim person of defining.
Claims (22)
1. light-emitting diode chip for backlight unit is characterized in that comprising:
Substrate;
Semiconductor layer is positioned on this substrate;
Little roughened layer is arranged in this semiconductor layer;
First electrode is positioned on this semiconductor layer; And
Second electrode is positioned on this semiconductor layer, wherein this first electrode and this second electrode electric insulation.
2. light-emitting diode chip for backlight unit according to claim 1 is characterized in that this semiconductor layer comprises:
The first type doping semiconductor layer is positioned on this substrate;
Luminescent layer is arranged on the subregion of this first type doping semiconductor layer; And
The second type doping semiconductor layer is arranged on this luminescent layer, and wherein this first electrode is electrically connected with this first type doping semiconductor layer, and this second electrode is electrically connected with this second type doping semiconductor layer.
3. light-emitting diode chip for backlight unit according to claim 2 is characterized in that this little roughened layer is positioned at this first type doping semiconductor layer.
4. light-emitting diode chip for backlight unit according to claim 2 is characterized in that this little roughened layer is between this first type doping semiconductor layer and this luminescent layer.
5. light-emitting diode chip for backlight unit according to claim 2 is characterized in that this little roughened layer is positioned at this luminescent layer.
6. light-emitting diode chip for backlight unit according to claim 2 is characterized in that this little roughened layer is between this luminescent layer and this second type doping semiconductor layer.
7. light-emitting diode chip for backlight unit according to claim 2 is characterized in that this little roughened layer is positioned at this second type doping semiconductor layer.
8. light-emitting diode chip for backlight unit according to claim 2 it is characterized in that this first type doping semiconductor layer is the n type semiconductor layer, and this second type doping semiconductor layer is the p type semiconductor layer.
9. light-emitting diode chip for backlight unit according to claim 2 is characterized in that this first type doping semiconductor layer comprises:
Resilient coating is positioned on this substrate;
First contact layer is positioned on this resilient coating; And
First bond course is positioned on this first contact layer.
10. light-emitting diode chip for backlight unit according to claim 9 is characterized in that this little roughened layer is between this resilient coating and this first contact layer.
11. light-emitting diode chip for backlight unit according to claim 9 is characterized in that this little roughened layer is between this first contact layer and this first bond course.
12. light-emitting diode chip for backlight unit according to claim 2 is characterized in that this second type doping semiconductor layer comprises:
Second bond course is positioned on this luminescent layer; And
Second contact layer is positioned on this second bond course.
13. light-emitting diode chip for backlight unit according to claim 12 is characterized in that this little roughened layer is between this second bond course and this second contact layer.
14. light-emitting diode chip for backlight unit according to claim 1 is characterized in that this little roughened layer comprises silicon nitride layer or magnesium nitride layer.
15. light-emitting diode chip for backlight unit according to claim 14 is characterized in that this silicon nitride layer or this magnesium nitride layer comprise the shielding pattern of a plurality of random distribution.
16. light-emitting diode chip for backlight unit according to claim 1 is characterized in that this little roughened layer comprises:
Nitride multilayer silicon layer or nitride multilayer magnesium layer; And
Nitride multilayer indium gallium layer, wherein above-mentioned silicon nitride layer or above-mentioned magnesium nitride layer and above-mentioned gallium indium nitride layer pile up each other alternately.
17. light-emitting diode chip for backlight unit according to claim 1 is characterized in that this little roughened layer comprises:
Nitride multilayer silicon layer or nitride multilayer magnesium layer; And
Nitride multilayer aluminium indium gallium layer, wherein above-mentioned silicon nitride layer or above-mentioned magnesium nitride layer and above-mentioned aluminum indium nitride gallium layer pile up each other alternately.
18. a light-emitting diode chip for backlight unit is characterized in that comprising:
Substrate;
Semiconductor layer is positioned on this substrate;
First electrode is positioned on this semiconductor layer;
Second electrode is positioned on this semiconductor layer, wherein this first electrode and this second electrode electric insulation; And
Little roughened layer is arranged between this semiconductor layer and this substrate, or is arranged at the upper surface of this semiconductor layer.
19. light-emitting diode chip for backlight unit according to claim 18 is characterized in that this little roughened layer comprises silicon nitride layer or magnesium nitride layer.
20. light-emitting diode chip for backlight unit according to claim 19 is characterized in that this silicon nitride layer or this magnesium nitride layer comprise the shielding pattern of a plurality of random distribution.
21. light-emitting diode chip for backlight unit according to claim 18 is characterized in that this little roughened layer comprises:
Nitride multilayer silicon layer or nitride multilayer magnesium layer; And
Nitride multilayer indium gallium layer, wherein above-mentioned silicon nitride layer or above-mentioned magnesium nitride layer and above-mentioned gallium indium nitride layer pile up each other alternately.
22. light-emitting diode chip for backlight unit according to claim 18 is characterized in that this little roughened layer comprises:
Nitride multilayer silicon layer or nitride multilayer magnesium layer; And
Nitride multilayer aluminium indium gallium layer, wherein above-mentioned silicon nitride layer or above-mentioned magnesium nitride layer and above-mentioned aluminum indium nitride gallium layer pile up each other alternately.
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| CN102169930A (en) * | 2011-03-07 | 2011-08-31 | 山东大学 | Method for coarsening surface of light-emitting diode (LED) with the aid of metal nanoparticles |
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Effective date of registration: 20161031 Address after: Taiwan, China Hsinchu Science Park Road No. five, No. 5 Patentee after: Jingyuan Optoelectronics Co., Ltd. Address before: Longtan Road, Taoyuan County, Taiwan, China Longtan science and Technology Industrial Park, No. 99, Dragon Garden Road Patentee before: Formosa Epitaxy Incorporation |