CN107068822A - A kind of smooth extraction efficiency high LED epitaxial structure and its growing method - Google Patents
A kind of smooth extraction efficiency high LED epitaxial structure and its growing method Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 25
- 238000000605 extraction Methods 0.000 title claims description 29
- 239000011777 magnesium Substances 0.000 claims abstract description 54
- 229910020056 Mg3N2 Inorganic materials 0.000 claims abstract description 42
- 239000000178 monomer Substances 0.000 claims abstract description 33
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 239000000463 material Substances 0.000 claims abstract description 18
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims abstract description 17
- 229910052749 magnesium Inorganic materials 0.000 claims abstract description 17
- 229910002704 AlGaN Inorganic materials 0.000 claims abstract description 15
- 238000002156 mixing Methods 0.000 claims abstract description 11
- 239000010410 layer Substances 0.000 claims description 245
- 230000012010 growth Effects 0.000 claims description 60
- 238000006243 chemical reaction Methods 0.000 claims description 46
- 238000012545 processing Methods 0.000 claims description 12
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 10
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 9
- 239000011241 protective layer Substances 0.000 claims description 9
- 229910052594 sapphire Inorganic materials 0.000 claims description 9
- 239000010980 sapphire Substances 0.000 claims description 9
- 229910052681 coesite Inorganic materials 0.000 claims description 6
- 229910052906 cristobalite Inorganic materials 0.000 claims description 6
- 230000001788 irregular Effects 0.000 claims description 6
- 239000000377 silicon dioxide Substances 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052682 stishovite Inorganic materials 0.000 claims description 6
- 229910052905 tridymite Inorganic materials 0.000 claims description 6
- 230000008859 change Effects 0.000 claims description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 4
- 239000001257 hydrogen Substances 0.000 claims description 4
- 229910052739 hydrogen Inorganic materials 0.000 claims description 4
- RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 claims description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 1
- 239000001301 oxygen Substances 0.000 claims 1
- 229910052760 oxygen Inorganic materials 0.000 claims 1
- 230000000694 effects Effects 0.000 abstract description 8
- 230000009467 reduction Effects 0.000 abstract description 6
- 239000013078 crystal Substances 0.000 abstract description 4
- 238000004519 manufacturing process Methods 0.000 abstract 1
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 28
- 230000000052 comparative effect Effects 0.000 description 16
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 7
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 5
- 238000005538 encapsulation Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000006798 recombination Effects 0.000 description 3
- 238000005215 recombination Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 230000004913 activation Effects 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 230000007773 growth pattern Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 230000002045 lasting effect Effects 0.000 description 2
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 2
- 229910052753 mercury Inorganic materials 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 238000007788 roughening Methods 0.000 description 2
- 230000005533 two-dimensional electron gas Effects 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 239000013256 coordination polymer Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- YXRMETCPHVCOMV-UHFFFAOYSA-N indium;magnesium;oxotin Chemical compound [Mg].[In].[Sn]=O YXRMETCPHVCOMV-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
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- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
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Abstract
The present invention provides a kind of LED epitaxial structure, including substrate, low temperature buffer layer, the GaN layer that undopes, the n-type GaN layer for the Si that adulterates, the In stacked graduallyxGa(1‑x)N/GaN luminescent layers, InN/Mg3N2Roughened layer, p-type AlGaN layer and the p-type GaN layer for mixing magnesium, InN/Mg in superlattices3N2Roughened layer includes 8 10 monomers being stacked in superlattices, and monomer includes InN layers and Mg3N2Layer.Apply the technical scheme of the present invention, effect is：By InN/Mg3N2In superlattices on roughened layer covering luminescent layer, InN/Mg3N2Material has the advantages that and GaN lattice mismatches are small, and epitaxial layer crystal mass is good, can improve light efficiency, and antistatic effect can be lifted again, and LED product quality gets a promotion；The present invention is used as an overall technical architecture so that take out photon numbers increase in LED light unit time, and photon decay number of times reduction in LED, and light taking-up intensity is accordingly lifted.Invention additionally discloses a kind of growing method of above-mentioned LED epitaxial structure, step is simplified, and technological parameter is easily controlled, and is easy to industrialized production.
Description
Technical field
The present invention relates to electronic technology field, and in particular to a kind of high LED epitaxial structure of smooth extraction efficiency and its growth
Method.
Background technology
At present, LED is a kind of solid state lighting, because it has low small volume, power consumption, service life length, high brightness, ring
Protect, it is sturdy and durable the advantages of and must be approved by consumers in general.High power device driving voltage and light efficiency require it is current city
The emphasis of field demand.
In the prior art, the taking-up of LED light is generally photon and passed at any angle to LED inside circumferences from luminescent layer
Broadcast, a part is taken out from LED tops, sidepiece, and a part is propagated to surrounding again by the reflection of Sapphire Substrate, final photon
Complete from luminescent layer to outside taking-up process；Side GaN, upper strata SiO2Refractive index it is bigger than air, cause photon from GaN,
SiO2When taking-up with air interface, the efficiency of taking-up or the proportion of photons of taking-up are limited by maximum critical angle,
When photon spread is to interface, incidence angle is less than a, and (a is by GaN or SiO2Determined with air refraction coefficient n, a theoretical values
23.6 °), the luminous photon of luminescent layer any angle is by propagating, and some ratio photon incidence angle is less than a values, this portion
Light splitting will be completely reflected to LED, and fully reflective photon needs to change incidence angle until it by the propagation of next step
Incidence angle be more than critical angle when can just be removed, in summary in traditional LED the extraction efficiency of photon by critical angle
Limitation, by interface it is fully reflective return light further can decay in the air, reduce to a certain degree take out light intensity.
The specific growth course of existing LED epitaxial structure (reference picture 1) is as follows：
The first step, under 1000-1100 DEG C of hydrogen atmosphere, be passed through 100L/min-130L/min H2, keep reaction
Cavity pressure 100-300mbar (barometric millimeter of mercury), handles the substrate 1.1 of sapphire material, and processing time is 8-10 minutes；
Second step, it is cooled at 500-600 DEG C, keeps reaction cavity pressure 300-600mbar, is passed through flow for 10000-
20000sccm (sccm remarks standard milliliters are per minute) NH3, 50-100sccm TMGa, 100L/min-130L/min H2、
Growth thickness is 20-40nm low temperature buffer layer 1.2 on a sapphire substrate；Raise at 1000-1100 DEG C of temperature, keep reaction
Cavity pressure 300-600mbar, is passed through the NH that flow is 30000-40000sccm3, 100-130L/min H2, keeping temperature it is stable
Continue 300-500s and low temperature buffer layer 1.2 is corroded into irregular island；
3rd step, increase the temperature to 1000-1200 DEG C, keep reaction cavity pressure 300-600mbar, being passed through flow is
30000-40000sccm (sccm remarks standard milliliters are per minute) NH3, 200-400sccm TMGa and 100-130L/min
H2, continued propagation thickness is 2-4 μm of the GaN layer 1.3 that undopes；
The n-type GaN layer 1.4 of 4th step, growth doping Si, be specifically：Keep reaction chamber pressure and temperature constant, be passed through stream
Measure as the NH of 30000-60000sccm (sccm remarks standard milliliters are per minute)3, 200-400sccm TMGa, 100-130L/
Min H2With 20-50sccm SiH4, continued propagation thickness is 3-4 μm of the first n-type GaN layer 1.41, and Si doping concentration is
5E18-1E19atoms/cm3(i.e. remarks 1E19 represents 10 19 power 10^19, by that analogy)；Keep reaction cavity pressure
With it is temperature-resistant, be passed through flow be 30000-60000sccm (sccm remarks standard milliliters are per minute) NH3、200-400sccm
TMGa, 100-130L/min H2With 2-10sccm SiH4, continued propagation thickness is 200-400nm the second n-type GaN layer
1.42, Si doping concentration is 5E17-1E18atoms/cm3；
5th step, growth InxGa(1-x)N/GaN luminescent layers 1.5, the InxGa(1-x)N/GaN luminescent layers 1.5 include repeating
7-15 monomer of growth, the monomer includes the In stacked graduallyxGa(1-x)N layers 1.51 and GaN layer 1.52, wherein x=
0.20-0.25, specific growth course is：700-750 DEG C of reaction cavity pressure 300-400mbar and temperature are kept, being passed through flow is
50000-70000sccm NH3, 20-40sccm TMGa, 1500-2000sccm TMIn and 100-130L/min N2, it is raw
The In that long doping In thickness is 2.5-3.5nmxGa(1-x)N layers 1.51, wherein x=0.20-0.25, emission wavelength 450-
455nm；Then 750-850 DEG C of temperature is raised, keeps reaction cavity pressure 300-400mbar to be passed through flow for 50000-
70000sccm NH3, 20-100sccm TMGa and 100-130L/min N2, growth thickness is 8-15nm GaN layer 1.52；
900-950 DEG C of 6th step, holding reaction cavity pressure 200-400mbar and temperature, are passed through flow for 50000-
70000sccm NH3, 30-60sccm TMGa, 100-130L/min H2, 100-130sccm TMAl and 1000-
1300sccm Cp2Mg, continued propagation thickness is 50-100nm p-type AlGaN layer 1.7, and Al doping concentration is 1E20-
3E20atoms/cm3, Mg doping concentration is 1E19-1E20atoms/cm3；
950-1000 DEG C of 7th step, holding reaction cavity pressure 400-900mbar and temperature, are passed through flow for 50000-
70000sccm NH3, 20-100sccm TMGa, 100-130L/min H2With 1000-3000sccm Cp2Mg is lasting raw
Long thickness is the 50-200nm p-type GaN layer 1.8 for mixing magnesium, and Mg doping concentration is 1E19-1E20atoms/cm3；
8th step, finally it is cooled to 650-680 DEG C, is incubated 20-30min, is then switched off heating system, closes and give gas system
System, furnace cooling.
Above-mentioned LED epitaxial structure also includes indium tin oxide layer 1.9, SiO2Protective layer 1.12, P electrode 1.10 and N electrode
1.11, specific growth pattern is referred to prior art.
The patent application of Application No. 201610216967.2 is also disclosed a kind of extension increase LED light and taken out in the prior art
The bottom roughening growing method of efficiency, structure refers to Fig. 2, and specific growth pattern includes processing substrate, low temperature growth buffer layer
Undope GaN layer, growth doping Si N-type GaN layer, alternating growth of GaN, growth adulterates In InxGa(1-x)N/GaN luminescent layers,
The p-type GaN layer of growing P-type AlGaN layer and growth doping Mg, cooling down, growing also includes growth InN/ after the GaN layer that undopes
SiyGa(1-y)N superlattices bottom roughened layer, grows InN/SiyGa(1-y)After the roughened layer of N superlattices bottom, growth doping Si N-type
GaN layer also undopes GaN layer including further growth.Such a side can improve light extraction efficiency to a certain extent, but exist with
Lower defect：(1) because InN/SiyGa(1-y)N materials and GaN material have larger lattice mismatch, and the influence brought is GaN
Material dislocation density is up to 80/cm2；(2) because GaN material dislocation is close big, crystal mass is poor there is provided the passage of electric leakage,
The antistatic effect of LED component is relatively weak, and particularly antistatic effect drastically weakens under high voltage.
In summary, it is badly in need of high LED epitaxial structure of a kind of smooth extraction efficiency and preparation method thereof to solve prior art
Present in problem.
The content of the invention
Simplified and the high LED epitaxial structure of light extraction efficiency present invention aims at a kind of structure of offer, particular technique
Scheme is as follows：
A kind of high LED epitaxial structure of smooth extraction efficiency, including stack gradually substrate, low temperature buffer layer, undope GaN
Layer, doping Si n-type GaN layer, InxGa(1-x)N/GaN luminescent layers, InN/Mg3N2Roughened layer in superlattices, p-type AlGaN layer and
Mix the p-type GaN layer of magnesium；
The InN/Mg3N2Roughened layer includes 8-10 monomer being stacked in superlattices, and the monomer includes layer successively
The folded InN layers and Mg set3N2Layer, wherein：Described InN layers and the Mg3N2The thickness of layer is 2.0-3.0nm.
It is preferred in above technical scheme, the n-type GaN layer of the doping Si include the first n-type GaN layer for stacking gradually with
Second n-type GaN layer, the thickness of first n-type GaN layer is 3-4 μm, Si doping concentrations 5E18-1E19atoms/cm3；It is described
The thickness of second n-type GaN layer is 200-400nm, Si doping concentrations 5E17-1E18atoms/cm3；
The InxGa(1-x)N/GaN luminescent layers include 7-15 monomer of repeated growth, and the monomer includes stacking gradually
InxGa(1-x)N layers and GaN layer, wherein x=0.20-0.25, the InxGa(1-x)N layers of thickness is 2.5-3.5nm, described
The thickness of GaN layer is 8-15nm.
Preferred in above technical scheme, the material of the substrate is sapphire；The low temperature buffer layer is to corrode into not
The structure of regular island, its thickness is 20-40nm；The thickness of the GaN layer that undopes is 2-4 μm；The p-type AlGaN layer
Thickness is 50-100nm；The thickness of the p-type GaN layer for mixing magnesium is 50-200nm.
Apply the technical scheme of the present invention, have the advantages that：
(1) present invention employs new material InN/Mg3N2, effect is：A, there is very low energy band as potential well, with very
Strong sunken domain effect, electronics longitudinal propagation speed further declines, InN/Mg3N2Material thickness, which reaches nanoscale, will form very strong
Two-dimensional electron gas, two-dimensional electron gas transverse direction propagation rate is very high, and this just creates favourable condition for electronics is extending transversely；b、
InN/Mg3N2Material use In atom active reduces Mg activation energy, improves Mg activation efficiency and Mg doping efficiency,
Hole concentration is improved, and hole injection efficiency is improved, and the light efficiency of LED component gets a promotion；c、InN/Mg3N2Roughened layer in superlattices
Luminescent layer is covered, Mg is utilized3N2On the one hand coarse characteristic is caused with roughened layer in superlattice form growth with InN material surfaces
Light occurs the ratio of the desirable light extraction of diffusing reflection increase in roughened layer, on the other hand causes light to change incidence angle by roughened layer and reduce
The ratio for taking light is limited by critical angle.
(2) present invention uses InN/Mg3N2Material, InN/Mg3N2Material has the advantages that and GaN lattice mismatches are small, extension
Layer crystal weight is good, can improve light efficiency, and antistatic effect can be lifted again, and LED product quality gets a promotion, while the present invention will
InN/Mg3N2In superlattices on roughened layer covering luminescent layer, the mobility in hole can be improved, lifting electronics and hole are in volume
The harmony of sub- well area distribution, so as to effectively improve electronics and the recombination probability in hole, improves LED luminous efficiencies.
(3) present invention is used as an overall technical architecture so that photon numbers increase is taken out in the LED light unit time,
Photon decay in LED number of times reduction, light take out intensity accordingly lifted, and then cause LED light efficiency be obviously improved.
Invention additionally discloses a kind of growing method of the high LED epitaxial structure of smooth extraction efficiency, the InN/Mg3N2It is super brilliant
The growth course of roughened layer is specifically in lattice：The InN/Mg3N2Roughened layer includes being stacked in superlattices 8-10 is single
Body, the specific growth course of the monomer is：750 DEG C -800 DEG C of a, holding reaction cavity pressure 300-400mbar and temperature, are passed through
Flow is 50000-70000sccm NH3, 30-60sccm TMGa, 100-130L/min N2With 100-130sccm's
TMIn, growth thickness is 2-3nm InN layers；B, holding reaction chamber pressure and temperature are constant, are passed through flow for 50000-
70000sccm NH3, 100-130L/min N2With 1000-1300sccm Cp2Mg, growth thickness is 2-3nm Mg3N2Layer.
Preferred in above technical scheme, the processing procedure of substrate is：Under 1000-1100 DEG C of hydrogen atmosphere, it is passed through
100-130L/min H2, it is 100-300mbar to keep reaction cavity pressure, handles substrate, and processing time is 8-10 minutes；
The growth of the low temperature buffer layer and processing procedure are：It is cooled at 500 DEG C -600 DEG C, holding reaction cavity pressure is
300-600mbar, is passed through the NH that flow is 10000-20000sccm3, 50-100sccm TMGa and 100L/min-130L/
Min H2, in the low temperature buffer layer that Grown thickness is 20-40nm；Temperature is raised to 1000 DEG C -1100 DEG C, keeps anti-
It is 300-600mbar to answer cavity pressure, is passed through the NH that flow is 30000-40000sccm3With 100-130L/min H2Continue 300-
500s, irregular island is corroded into by low temperature buffer layer；
The growth course of the GaN layer that undopes is：Temperature is raised to 1000 DEG C -1200 DEG C, holding reaction cavity pressure is
300-600mbar, is passed through the NH that flow is 30000-40000sccm3, 200-400sccm TMGa and 100-130L/min
H2, continued propagation thickness is 2-4 μm of the GaN layer that undopes；
The growth course of the n-type GaN layer of the doping Si is：The n-type GaN layer of the doping Si includes the stacked gradually
One n-type GaN layer and the second n-type GaN layer, specific growing method is：A, holding reaction chamber pressure and temperature are constant, and being passed through flow is
30000-60000sccm NH3, 200-400sccm TMGa, 100-130L/min H2With 20-50sccm SiH4, continue
Growth thickness is 3-4 μm of the first n-type GaN layer, and Si doping concentration is 5E18-1E19atoms/cm3；B, holding reaction chamber pressure
Power and temperature-resistant, is passed through the NH that flow is 30000-60000sccm3, 200-400sccm TMGa, 100-130L/min H2
With 2-10sccm SiH4, continued propagation thickness is 200-400nm the second n-type GaN layer, and Si doping concentration is 5E17-
1E18atoms/cm3；
The InxGa(1-x)The growth course of N/GaN luminescent layers is：InxGa(1-x)N/GaN luminescent layers include repeated growth
7-15 monomer, the growth course of the monomer is specifically：700 DEG C of a, holding reaction cavity pressure 300-400mbar and temperature-
750 DEG C, it is passed through the NH that flow is 50000-70000sccm3, 20-40sccm TMGa, 1500-2000sccm TMIn and
100-130L/min N2, the thickness for growing doping In is 2.5-3.5nm InxGa(1-x)N layers, wherein x=0.20-0.25, hair
The a length of 450-455nm of light wave；B, rise temperature are to 750 DEG C -850 DEG C, and it is 300-400mbar to keep reaction cavity pressure, is passed through stream
Measure the NH for 50000-70000sccm3, 20-100sccm TMGa and 100-130L/min N2, growth thickness is 8-15nm's
GaN layer；
The growth course of the p-type AlGaN layer is：Keep reaction cavity pressure be 200-400mbar and temperature be 900 DEG C-
950 DEG C, it is passed through the NH that flow is 50000-70000sccm3, 30-60sccm TMGa, 100-130L/min H2、100-
130sccm TMAl and 1000-1300sccm Cp2Mg, continued propagation thickness is 50-100nm p-type AlGaN layer, Al's
Doping concentration is 1E20-3E20atoms/cm3, Mg doping concentration is 1E19-1E20atoms/cm3；
The growth course of the p-type GaN layer for mixing magnesium is：Holding reaction cavity pressure is 400-900mbar and temperature is 950
DEG C -1000 DEG C, it is passed through the NH that flow is 50000-70000sccm3, 20-100sccm TMGa, 100-130L/min H2With
1000-3000sccm Cp2Mg, continued propagation thickness is the 50-200nm p-type GaN layer for mixing magnesium, and Mg doping concentration is
1E19-1E20atoms/cm3。
It is preferred in above technical scheme, it is further comprising the steps of：Indium tin oxide layer is set in the p-type GaN layer for mix magnesium；
P electrode is set on the indium tin oxide layer, N electrode is set in the n-type GaN layer of the doping Si；It is high in light extraction efficiency
LED epitaxial structure first product on SiO is set2Protective layer.
Preferred, 1500-2500 angstroms of the thickness of the indium tin oxide layer, the SiO in above technical scheme2Protective layer
500-1000 angstroms of thickness.
Using the inventive method, technique is simplified, and parameter is easy to control, the high LED epitaxial structure of obtained light extraction efficiency
Far superior to LED epitaxial structure is made in prior art, and the performance parameter of the high LED epitaxial structure of light extraction efficiency is：Brightness is
129Lm/w or so, voltage is 3.152V or so, and backward voltage is 35.33 or so, and emission wavelength is 450.32nm or so, electric leakage
For 0.035 μ A or so, antistatic 2KV yields are 88.6% or so.
In addition to objects, features and advantages described above, the present invention also has other objects, features and advantages.
Below with reference to figure, the present invention is further detailed explanation.
Brief description of the drawings
The accompanying drawing for constituting the part of the application is used for providing a further understanding of the present invention, schematic reality of the invention
Apply example and its illustrate to be used to explain the present invention, do not constitute inappropriate limitation of the present invention.In the accompanying drawings：
Fig. 1 is to plate indium tin oxide layer and SiO in the prior art2The structural representation of common LED epitaxial structure after protective layer
Figure；
The epitaxial structure that Fig. 2 is the bottom roughening growth gained LED of extension increase LED light extraction efficiency in the prior art shows
It is intended to；
Fig. 3 is plating indium tin oxide layer and SiO in embodiment 12The high LED epitaxial structure of light extraction efficiency after protective layer
Structural representation；
Wherein, 1.1, substrate, 1.2, low temperature buffer layer, 1.3, undope GaN layer, 1.4, the n-type GaN layer for the Si that adulterates,
1.41st, the first n-type GaN layer, the 1.42, second n-type GaN layer, 1.5, InxGa(1-x)N/GaN luminescent layers, 1.51, InxGa(1-x)N layers,
1.52nd, GaN layer, 1.6, InN/Mg3N2Roughened layer in superlattices, 1.61, InN layers, 1.62, Mg3N2Layer, 1.7, p-type AlGaN layer,
1.8th, the p-type GaN layer of magnesium is mixed, 1.9, indium tin oxide layer, 1.10, P electrode, 1.11, N electrode, 1.12, SiO2Protective layer；
1.13rd, the first U-shaped GaN layer, 1.14, InN/SiyGa(1-y)Superlattices bottom roughened layer, 1.141, InN layers,
1.142、SiyGa(1-y)Layer, the 1.15, second U-shaped GaN layer.
Embodiment
Embodiments of the invention are described in detail below in conjunction with accompanying drawing, but the present invention can be limited according to claim
Fixed and covering multitude of different ways is implemented.
Embodiment 1：
Referring to Fig. 3, a kind of high LED epitaxial structure of smooth extraction efficiency, the Sapphire Substrate 1.1 stacked gradually, low temperature delay
Rush layer 1.2, the GaN layer that undopes 1.3, the n-type GaN layer 1.4 for the Si that adulterates, InxGa(1-x)N/GaN luminescent layers 1.5, InN/Mg3N2It is super
Roughened layer 1.6, p-type AlGaN layer 1.7 and the p-type GaN layer 1.8 of magnesium is mixed in lattice.
The material of the substrate 1.1 is sapphire.
The low temperature buffer layer 1.2 is the structure for corroding into irregular island, and its thickness is 20-40nm.
The thickness of the GaN layer 1.3 that undopes is 2-4 μm.
The n-type GaN layer 1.4 of the doping Si includes the first n-type GaN layer 1.41 and the second n-type GaN layer stacked gradually
1.42, the thickness of first n-type GaN layer 1.41 is 3-4 μm, Si doping concentrations 5E18-1E19atoms/cm3；2nd n
The thickness of type GaN layer 1.42 is 200-400nm, Si doping concentrations 5E17-1E18atoms/cm3。
The InxGa(1-x)N/GaN luminescent layers 1.5 include 7-15 monomer of repeated growth, and the monomer includes layer successively
Folded InxGa(1-x)N layers 1.51 and GaN layer 1.52, wherein x=0.20-0.25, the InxGa(1-x)The thickness of N layers 1.51 is
2.5-3.5nm, the thickness of the GaN layer 1.52 is 8-15nm.
The InN/Mg3N2Roughened layer 1.6 includes 10 monomers being stacked in superlattices, and the monomer is included successively
The InN layers 1.61 and Mg being stacked3N2Layer 1.62, wherein：The InN layers 1.61 and the Mg3N2Layer 1.62 thickness be
3.0nm。
The thickness of the p-type AlGaN layer 1.7 is 50-100nm.
The thickness of the p-type GaN layer 1.8 for mixing magnesium is 50-200nm.
The specific growing method of the high LED epitaxial structure of above-mentioned smooth extraction efficiency is as follows：
Using high-purity H2Or high-purity N2Or high-purity H2And high-purity N2Mixed gas be used as carrier gas, high-purity N H3It is used as N sources, gold
Belong to organic source trimethyl gallium (TMGa) as gallium source, trimethyl indium (TMIn) is as indium source, and N type dopant is silane (SiH4),
Trimethyl aluminium (TMAl) is two luxuriant magnesium (CP as silicon source P-type dopant2Mg), substrate is sapphire, and reaction pressure is in 70mbar
To between 900mbar.
Growth course comprises the following steps：
The first step, under 1000-1100 DEG C of hydrogen atmosphere, be passed through 100L/min-130L/min H2, keep reaction chamber
Pressure is 100-300mbar (barometric millimeter of mercury), handles the substrate 1.1 of sapphire material, and processing time is 8-10 minutes；
Second step, it is cooled at 500-600 DEG C, it is 300-600mbar to keep reaction cavity pressure, is passed through flow for 10000-
20000sccm (sccm remarks standard milliliters are per minute) NH3, 50-100sccm TMGa and 100L/min-130L/min
H2, growth thickness is 20-40nm low temperature buffer layer 1.2 on substrate 1.1；Temperature is raised to 1000-1200 DEG C, reaction is kept
Cavity pressure is 300-600mbar, is passed through the NH that flow is 30000-40000sccm3With 100-130L/min H2Continue 300-
500s, irregular island is corroded into by low temperature buffer layer 1.2；
3rd step, rise temperature are to 1000-1200 DEG C, and it is 300-600mbar to keep reaction cavity pressure, and being passed through flow is
30000-40000sccm (sccm remarks standard milliliters are per minute) NH3, 200-400sccm TMGa and 100-130L/min
H2, continued propagation thickness is 2-4 μm of the GaN layer 1.3 that undopes；
The n-type GaN layer 1.4 of 4th step, growth doping Si, be specifically：The n-type GaN layer of the doping Si includes layer successively
Folded the first n-type GaN layer 1.41 and the second n-type GaN layer 1.42, specific growing method is：A, holding reaction chamber pressure and temperature
It is constant, it is passed through the NH that flow is 30000-60000sccm (sccm remarks standard milliliters are per minute)3, 200-400sccm
TMGa, 100-130L/min H2With 20-50sccm SiH4, continued propagation thickness is 3-4 μm of the first n-type GaN layer 1.41,
Si doping concentration is 5E18-1E19atoms/cm3(remarks：1E19 represents 10 19 powers)；B, keep reaction cavity pressure and
It is temperature-resistant, it is passed through the NH that flow is 30000-60000sccm3, 200-400sccm TMGa, 100-130L/min H2And 2-
10sccm SiH4, continued propagation thickness is 200-400nm the second n-type GaN layer 1.42, and Si doping concentration is 5E17-
1E18atoms/cm3；
5th step, growth InxGa(1-x)N/GaN luminescent layers 1.5, be specifically：InxGa(1-x)N/GaN luminescent layers include repeating
7-15 monomer of growth, the growth course of the monomer is specifically：A, holding reaction cavity pressure 300-400mbar and temperature
700-750 DEG C, it is passed through the NH that flow is 50000-70000sccm3, 20-40sccm TMGa, 1500-2000sccm TMIn
With 100-130L/min N2, the thickness for growing doping In is 2.5-3.5nm InxGa(1-x)N layers 1.51, wherein x=0.20-
0.25, emission wavelength is 450-455nm；B, rise temperature are to 750-850 DEG C, and it is 300-400mbar to keep reaction cavity pressure, is led to
Inbound traffics are 50000-70000sccm NH3, 20-100sccm TMGa and 100-130L/min N2, growth thickness is 8-
15nm GaN layer 1.52；
6th step, the growth InN/Mg3N2Roughened layer 1.6 in superlattices, detailed process is：The InN/Mg3N2It is super brilliant
Roughened layer 1.6 includes 10 monomers being stacked in lattice, and the specific growth course of the monomer is：A, holding reaction cavity pressure
750-800 DEG C of 300-400mbar and temperature, are passed through the NH that flow is 50000-70000sccm3, 30-60sccm TMGa,
100-130L/min N2With 100-130sccm TMIn, growth thickness is 3nm InN layers 1.61；B, holding reaction cavity pressure
With it is temperature-resistant, be passed through flow be 50000-70000sccm NH3, 100-130L/min N2With 1000-1300sccm's
Cp2Mg, growth thickness is 3nm Mg3N2Layer 1.62；
7th step, keep reaction cavity pressure to be 200-400mbar and temperature is 900-950 DEG C, be passed through flow for 50000-
70000sccm NH3, 30-60sccm TMGa, 100-130L/min H2, 100-130sccm TMAl and 1000-
1300sccm Cp2Mg, continued propagation thickness is 50-100nm p-type AlGaN layer 1.7, and Al doping concentration is 1E20-
3E20atoms/cm3, Mg doping concentration is 1E19-1E20atoms/cm3；
8th step, keep reaction cavity pressure to be 400-900mbar and temperature is 950-1000 DEG C, be passed through flow for 50000-
70000sccm NH3, 20-100sccm TMGa, 100-130L/min H2With 1000-3000sccm Cp2Mg is lasting raw
Long thickness is the 50-100nm p-type GaN layer 1.8 for mixing magnesium, and Mg doping concentration is 1E19-1E20atoms/cm3；
9th step, it is cooled to 650-680 DEG C, is incubated 20-30min, is then switched off heating system, closes and give gas system, with
Stove is cooled down, and produces the high LED epitaxial structure of light extraction efficiency.
The high LED epitaxial structure of above-mentioned smooth extraction efficiency subsequently also passes through following steps：In the p-type GaN layer 1.8 for mixing magnesium
Indium tin oxide layer 1.9 is set；P electrode 1.10 is set on the indium tin oxide layer 1.9, in the n-type GaN layer of the doping Si
N electrode 1.11 is set on 1.4；SiO is set on the high LED epitaxial structure first product of light extraction efficiency2Protective layer 1.12.
Product (marked as S1) performance parameter refers to table 1 after LED epitaxial structure encapsulation obtained by the present embodiment.
Embodiment 2- embodiments 3
Embodiment 2-3 difference from Example 1 is：InN/Mg described in embodiment 23N2Roughened layer 1.6 in superlattices
Including 10 monomers being stacked, the InN layers 1.61 and the Mg3N2The thickness of layer 1.62 is institute in 2nm, embodiment 3
State InN/Mg3N2Roughened layer 1.6 includes 10 monomers being stacked, the InN layers 1.61 and the Mg in superlattices3N2Layer
1.62 thickness is 2.5nm.
Other specification and the equal be the same as Example 1 of processing step.
Product (marked as S2 and S3) performance parameter refers to table 1 after LED epitaxial structure encapsulation obtained by embodiment 2-3.
Comparative example 1
Comparative example 1 refers to the growing method gained LED epitaxial structure (accompanying drawing 1) in background technology, is labeled as DB1.
Comparative example 2
The difference from Example 1 of comparative example 2 is：By the InN/Mg of the present invention3N2Roughened layer 1.6 in superlattices
It is replaced with InN/Si of the prior artyGa(1-y)Superlattices bottom roughened layer, other are same as Example 1.
The high LED epitaxial structure of the gained light extraction efficiency of comparative example 2 is labeled as DB2.
Comparative example 3- comparative examples 6
Comparative example 3-6 difference from Example 1 is：InN/Mg described in comparative example 33N2In superlattices
Roughened layer 1.6 includes 10 monomers being stacked, the InN layers 1.61 and the Mg3N2The thickness of layer 1.62 is 1nm；It is right
Than InN/Mg described in embodiment 43N2Roughened layer 1.6 includes 10 monomers being stacked, the InN layers 1.61 in superlattices
With the Mg3N2The thickness of layer 1.62 is 1.5nm；InN/Mg described in comparative example 53N2Roughened layer 1.6 is wrapped in superlattices
Include 10 monomers being stacked, the InN layers 1.61 and the Mg3N2The thickness of layer 1.62 is 3.5nm；Comparative example 6
Described in InN/Mg3N2Roughened layer 1.6 includes 10 monomers being stacked in superlattices, InN layers 1.61 and described
Mg3N2The thickness of layer 1.62 is 4nm.
Other specification and the equal be the same as Example 1 of processing step.
Product (being designated as DB3 and DB6) performance parameter refers to table after LED epitaxial structure encapsulation obtained by comparative example 3-6.
Comparative example 1-6 products obtained therefroms (DB1-DB6) and embodiment 1-3 products obtained therefroms (S1-S3) are respectively taken three,
ITO layer about 150nm is plated before identical under process conditions, Cr/Pt/Au electrode about 1500nm, identical bar are plated under the same conditions
Plating SiO under part2About 100nm, then under the same conditions by sample grinding and cutting into 635 μm of * 635 μm of (25mil*
Chip particle 25mil), then DB1-DB6 and S1-S3 each select 100 crystal grain in same position, identical encapsulate work
Under skill, white light LEDs are packaged into.Then integrating sphere test sample DB1-DB6 and S1-S3 under the conditions of driving current 350mA is used
Photoelectric properties, refer to table 1：
The performance comparison table of nine samples of the DB1-DB6 of table 1 and S1-S3
As can be seen from Table 1：
(1) 1- embodiments 3 (product S1-S3) and comparative example 3-6 (product DB3-DB6) are understood in conjunction with the embodiments,
InN/Mg in the present invention3N2The thickness of roughened layer directly influences the performance of LED product in superlattices, is specifically：InN/Mg3N2
Material thickness is too thick, and electronics ability extending transversely dies down, light efficiency reduction, and influence LED luminous zones uniformity, radiating and can
By property etc.；InN/Mg3N2Material thickness is too thin, the reduction of the mobility in hole, and it is equal that electronics and hole are distributed in MQW region
Weighing apparatus property is deteriorated, the recombination probability reduction in electronics and hole, the reduction of LED luminous efficiencies.
(2) in conjunction with the embodiments 1 and comparative example 1 understand, InN/Mg3N2The design of roughened layer in superlattices, can be very big
The light efficiency of LED product, InN/Mg are improved in degree3N2In superlattices on roughened layer covering luminescent layer, the migration in hole can be improved
Rate, the harmony that lifting electronics and hole are distributed in MQW region, so that electronics and the recombination probability in hole are effectively improved,
Improve LED luminous efficiencies.
(3) in conjunction with the embodiments 1 and comparative example 2 understand, InN/SiyGa(1-y)N is used for technical solution of the present invention, can be with
Light efficiency is lifted, but LED antistatic effect is poor；The present invention uses InN/Mg3N2Roughened layer in superlattices, products obtained therefrom
Performance is substantially better than prior art products obtained therefrom.
The preferred embodiments of the present invention are the foregoing is only, are not intended to limit the invention, for the skill of this area
For art personnel, the present invention can have various modifications and variations.Within the spirit and principles of the invention, that is made any repaiies
Change, equivalent substitution, improvement etc., should be included in the scope of the protection.
Claims (7)
1. the high LED epitaxial structure of a kind of smooth extraction efficiency, it is characterised in that substrate (1.1), low temperature including stacking gradually delay
Rush layer (1.2), the GaN layer that undopes (1.3), the n-type GaN layer (1.4) for the Si that adulterates, InxGa(1-x)N/GaN luminescent layers (1.5),
InN/Mg3N2Roughened layer (1.6), p-type AlGaN layer (1.7) and the p-type GaN layer (1.8) of magnesium is mixed in superlattices；
The InN/Mg3N2Roughened layer (1.6) includes 8-10 monomer being stacked in superlattices, and the monomer is included successively
The InN layers (1.61) and Mg being stacked3N2Layer (1.62), wherein：Described InN layers (1.61) and the Mg3N2Layer (1.62)
Thickness is 2.0-3.0nm.
2. the high LED epitaxial structure of smooth extraction efficiency according to claim 1, it is characterised in that the n-type of the doping Si
GaN layer (1.4) includes the first n-type GaN layer (1.41) and the second n-type GaN layer (1.42) stacked gradually, the first n-type GaN
The thickness of layer (1.41) is 3-4 μm, Si doping concentrations 5E18-1E19atoms/cm3；The thickness of second n-type GaN layer (1.42)
Spend for 200-400nm, Si doping concentrations 5E17-1E18atoms/cm3；
The InxGa(1-x)N/GaN luminescent layers (1.5) include 7-15 monomer of repeated growth, and the monomer includes stacking gradually
InxGa(1-x)N layers (1.51) and GaN layer (1.52), wherein x=0.20-0.25, the InxGa(1-x)The thickness of N layers (1.51)
For 2.5-3.5nm, the thickness of the GaN layer (1.52) is 8-15nm.
3. the high LED epitaxial structure of light extraction efficiency according to claim 1-2 any one, it is characterised in that described
The material of substrate (1.1) is sapphire；The low temperature buffer layer (1.2) is the structure for corroding into irregular island, and its thickness is
20-40nm；The thickness of the GaN layer that undopes (1.3) is 2-4 μm；The thickness of the p-type AlGaN layer (1.7) is 50-
100nm；The thickness of the p-type GaN layer (1.8) for mixing magnesium is 50-200nm.
4. a kind of growing method of the high LED epitaxial structure of light extraction efficiency as described in claim 1-3 any one, its feature
It is, the InN/Mg3N2The growth course of roughened layer (1.6) is specifically in superlattices：The InN/Mg3N2It is thick in superlattices
Change the 8-10 monomer that layer (1.6) includes being stacked, the specific growth course of the monomer is：A, holding reaction cavity pressure
300-400mbar and temperature are 750 DEG C -800 DEG C, are passed through the NH that flow is 50000-70000sccm3, 30-60sccm
TMGa, 100-130L/min N2With 100-130sccm TMIn, growth thickness is 2-3nm InN layers (1.61)；B, holding
Reaction chamber pressure and temperature is constant, is passed through the NH that flow is 50000-70000sccm3, 100-130L/min N2And 1000-
1300sccm Cp2Mg, growth thickness is 2-3nm Mg3N2Layer (1.62).
5. the growing method of the high LED epitaxial structure of smooth extraction efficiency according to claim 4, it is characterised in that described
The processing procedure of substrate (1.1) is：Under 1000-1100 DEG C of hydrogen atmosphere, 100-130L/min H is passed through2, keep reaction
Cavity pressure is 100-300mbar, processing substrate (1.1), and processing time is 8-10 minutes；
The growth of the low temperature buffer layer (1.2) and processing procedure are：It is cooled at 500 DEG C -600 DEG C, keeps reaction cavity pressure
For 300-600mbar, the NH that flow is 10000-20000sccm is passed through3, 50-100sccm TMGa and 100L/min-130L/
Min H2, growth thickness is 20-40nm low temperature buffer layer (1.2) on substrate (1.1)；Temperature is raised to 1000 DEG C -1100
DEG C, it is 300-600mbar to keep reaction cavity pressure, is passed through the NH that flow is 30000-40000sccm3With 100-130L/min's
H2Continue 300-500s, low temperature buffer layer (1.2) is corroded into irregular island；
The growth course of the GaN layer that undopes (1.3) is：Temperature is raised to 1000 DEG C -1200 DEG C, holding reaction cavity pressure is
300-600mbar, is passed through the NH that flow is 30000-40000sccm3, 200-400sccm TMGa and 100-130L/min
H2, continued propagation thickness is 2-4 μm of the GaN layer that undopes (1.3)；
The growth course of the n-type GaN layer (1.4) of the doping Si is：The n-type GaN layer (1.4) of the doping Si includes layer successively
Folded the first n-type GaN layer (1.41) and the second n-type GaN layer (1.42), specific growing method is：A, keep reaction cavity pressure and
It is temperature-resistant, it is passed through the NH that flow is 30000-60000sccm3, 200-400sccm TMGa, 100-130L/min H2With
20-50sccm SiH4, continued propagation thickness is 3-4 μm of the first n-type GaN layer (1.41), and Si doping concentration is 5E18-
1E19atoms/cm3；B, holding reaction chamber pressure and temperature are constant, are passed through the NH that flow is 30000-60000sccm3、200-
400sccm TMGa, 100-130L/min H2With 2-10sccm SiH4, continued propagation thickness is 200-400nm the 2nd n
Type GaN layer (1.42), Si doping concentration is 5E17-1E18atoms/cm3；
The InxGa(1-x)The growth course of N/GaN luminescent layers (1.5) is：InxGa(1-x)N/GaN luminescent layers (1.5) include repeating
7-15 monomer of growth, the growth course of the monomer is specifically：A, holding reaction cavity pressure 300-400mbar and temperature
700 DEG C -750 DEG C, it is passed through the NH that flow is 50000-70000sccm3, 20-40sccm TMGa, 1500-2000sccm
TMIn and 100-130L/min N2, the thickness for growing doping In is 2.5-3.5nm InxGa(1-x)N layers (1.51), wherein x=
0.20-0.25, emission wavelength is 450-455nm；B, rise temperature are to 750 DEG C -850 DEG C, and it is 300- to keep reaction cavity pressure
400mbar, is passed through the NH that flow is 50000-70000sccm3, 20-100sccm TMGa and 100-130L/min N2, growth
Thickness is 8-15nm GaN layer (1.52)；
The growth course of the p-type AlGaN layer (1.7) is：Keep reaction cavity pressure be 200-400mbar and temperature be 900 DEG C-
950 DEG C, it is passed through the NH that flow is 50000-70000sccm3, 30-60sccm TMGa, 100-130L/min H2、100-
130sccm TMAl and 1000-1300sccm Cp2Mg, continued propagation thickness is 50-100nm p-type AlGaN layer
(1.7), Al doping concentration is 1E20-3E20atoms/cm3, Mg doping concentration is 1E19-1E20atoms/cm3；
The growth course of the p-type GaN layer (1.8) for mixing magnesium is：Holding reaction cavity pressure is 400-900mbar and temperature is
950 DEG C -1000 DEG C, it is passed through the NH that flow is 50000-70000sccm3, 20-100sccm TMGa, 100-130L/min H2
With 1000-3000sccm Cp2Mg, continued propagation thickness is the 50-200nm p-type GaN layer (1.8) for mixing magnesium, and Mg doping is dense
Spend for 1E19-1E20atoms/cm3。
6. the growing method of the high LED epitaxial structure of light extraction efficiency according to claim 5, it is characterised in that also include
Following steps：
Indium tin oxide layer (1.9) is set in the p-type GaN layer (1.8) for mix magnesium；
P electrode (1.10) is set on the indium tin oxide layer (1.9), N is set in the n-type GaN layer (1.4) of the doping Si
Electrode (1.11)；
SiO is set on the high LED epitaxial structure first product of light extraction efficiency2Protective layer (1.12).
7. the growing method of the high LED epitaxial structure of light extraction efficiency according to claim 6, it is characterised in that the oxygen
Change 1500-2500 angstroms of the thickness of indium tin layer (1.9), the SiO2500-1000 angstroms of the thickness of protective layer (1.12).
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| CN107221587A (en) * | 2017-04-27 | 2017-09-29 | 华灿光电(苏州）有限公司 | A kind of epitaxial wafer of light emitting diode and preparation method thereof |
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| CN109103303B (en) * | 2018-06-29 | 2019-12-31 | 华灿光电（浙江）有限公司 | Preparation method of light-emitting diode epitaxial wafer and light-emitting diode epitaxial wafer |
| CN110931605A (en) * | 2018-09-20 | 2020-03-27 | 山东浪潮华光光电子股份有限公司 | Growth method of LED epitaxial contact layer |
| CN112436076A (en) * | 2020-11-20 | 2021-03-02 | 湘能华磊光电股份有限公司 | LED epitaxial structure and growth method |
| CN114156380A (en) * | 2021-11-30 | 2022-03-08 | 华灿光电（浙江）有限公司 | Light emitting diode epitaxial wafer for improving internal quantum efficiency and preparation method thereof |
| CN116072784A (en) * | 2023-03-29 | 2023-05-05 | 江西兆驰半导体有限公司 | Deep ultraviolet light-emitting diode epitaxial wafer, preparation method thereof and LED |
| CN116072784B (en) * | 2023-03-29 | 2023-06-02 | 江西兆驰半导体有限公司 | Deep ultraviolet light-emitting diode epitaxial wafer, preparation method thereof and LED |
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