CN112436076A - LED epitaxial structure and growth method - Google Patents

LED epitaxial structure and growth method Download PDF

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CN112436076A
CN112436076A CN202011308870.7A CN202011308870A CN112436076A CN 112436076 A CN112436076 A CN 112436076A CN 202011308870 A CN202011308870 A CN 202011308870A CN 112436076 A CN112436076 A CN 112436076A
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superlattice
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冯磊
徐平
黄胜蓝
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Xiangneng Hualei Optoelectrical Co Ltd
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Xiangneng Hualei Optoelectrical Co Ltd
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Abstract

The invention discloses an LED epitaxial structure, which comprises a substrate, and a first semiconductor layer, a light-emitting layer and a composite layer which are sequentially stacked on the substrate; the composite layer comprises a second semiconductor layer, a superlattice layer and a protective layer which are sequentially stacked; the superlattice layer comprises at least one superlattice monomer; the superlattice monomer comprises an InGaN layer, a connecting layer and Mg which are sequentially stacked3N2And (3) a layer. The invention passes through Mg3N2The layer increases the concentration of Mg atoms, so that the concentration of holes is increased, the InGaN layer can improve the conduction efficiency of the holes, the moving speed of the holes is accelerated, and the holes can quickly reach the light-emitting layerCombined with electrons, the connection layer can firmly connect InGaN layer and Mg3N2And the structure is compact. The invention also discloses a growing method of the LED epitaxial structure, which comprises the steps of sequentially growing a first semiconductor layer, a light-emitting layer and a composite layer on the substrate; the growth method can improve the hole concentration, thereby greatly improving the recombination efficiency of holes and electrons.

Description

LED epitaxial structure and growth method
Technical Field
The invention relates to the technical field of LEDs, in particular to an LED epitaxial structure and a growth method.
Background
The LED is a semiconductor for lighting, and is approved by consumers due to its advantages of small size, low power consumption, long service life, high brightness, environmental protection, durability, etc.
In the traditional LED, the N-type GaN layer can provide electrons for the light-emitting layer, the P-type GaN layer provides holes for the light-emitting layer, and the holes and the electrons are output in the form of photons after being compounded in the light-emitting layer, so that light emission is realized.
In view of the above, there is a need for an LED epitaxial structure with good light emitting effect and a growing method thereof to solve the problems in the prior art.
Disclosure of Invention
The invention aims to provide an LED epitaxial structure with good light-emitting effect and a growth method, and the specific technical scheme is as follows:
an LED epitaxial structure comprises a substrate, and a first semiconductor layer, a light emitting layer and a composite layer which are sequentially stacked on the substrate; the composite layer comprises a second semiconductor layer, a superlattice layer and a protective layer which are sequentially stacked; the second semiconductor layer is arranged on the light-emitting layer; the superlattice layer comprises at least one superlattice monomer; the superlattice monomer comprises an InGaN layer, a connecting layer and Mg which are sequentially stacked3N2A layer; the InGaN layer is located on one side close to the second semiconductor layer, and the protective layer is arranged on the superlattice layer.
Preferably, in the above technical solution, the protective layer is a P-type GaN layer.
Preferably, an ITO layer and an insulating layer are further sequentially stacked on the protective layer.
Preferably, in the above technical solution, the superlattice layer includes a plurality of superlattice monomers stacked in layers, and the thickness of the superlattice layer is 75-150 nm.
Preferably, in the above technical solution, the light emitting layer includes a light emitting working layer and at least one light emitting monomer; the light-emitting monomer comprises In arranged In a laminated mannerxGa(1-x)N layer and SiGaN layer, wherein x is 0.1-0.3, the InxGa(1-x)The N layer is positioned on one side close to the first semiconductor layer; the light-emitting working layer is arranged on the light-emitting monomer.
The invention also discloses a growth method of the LED epitaxial structure, which comprises the following steps;
the method comprises the following steps: growing a first semiconductor layer on a substrate;
step two: growing a light emitting layer on the first semiconductor layer;
step three: growing a composite layer on the light-emitting layer;
in the third step, the composite layer comprises a second semiconductor layer, a superlattice layer and a protective layer which are sequentially stacked; the second semiconductor layer is grown on the light-emitting layer; the superlattice layer comprises at least one superlattice monomer; the superlattice monomer comprises an InGaN layer, a connecting layer and Mg which are grown in sequence3N2A layer; the InGaN layer is grown on a side close to the second semiconductor layer, and the protective layer is grown on the superlattice layer.
Preferably, in the third step, the superlattice layer includes a plurality of superlattice monomers that are grown in a stacked manner, and the number of the superlattice monomers is 15-30.
Preferably, in the above technical solution, the specific growth method of the InGaN layer is: keeping the pressure of the reaction chamber at 200-3300-600sccm TEGa, 100-130L/min N2And 100-.
Preferably, in the above technical solution, the specific growth method of the connection layer is: maintaining reaction chamber pressure400-600mbar, raising the temperature to 950-1000 ℃, and introducing NH with the flow rate of 50000-70000sccm3400-1000L/min TEGa and 2000-4000sccm Cp2And Mg, and growing a connecting layer with the thickness of 1-2 nm.
Preferably, said Mg3N2The specific growth method of the layer is as follows: keeping the pressure of the reaction cavity at 400-3100-130L/min N2And 1000 Cp of 1300sccm2Mg, 2-3nm grown Mg3N2And (3) a layer.
The technical scheme of the invention has the following beneficial effects:
(1) the LED epitaxial structure comprises a substrate, and a first semiconductor layer, a light-emitting layer and a composite layer which are sequentially stacked on the substrate; the composite layer comprises a second semiconductor layer, a superlattice layer and a protective layer which are sequentially stacked; the second semiconductor layer is arranged on the light-emitting layer; the superlattice layer comprises at least one superlattice monomer; the superlattice monomer comprises an InGaN layer, a connecting layer and Mg which are sequentially stacked3N2A layer; the InGaN layer is located on one side close to the second semiconductor layer, and the protective layer is arranged on the superlattice layer. According to the invention, the superlattice layer is grown on the second semiconductor layer (namely the P-type AlGaN layer and the P-type GaN layer), so that the hole concentration can be effectively improved, and the luminous efficiency of the LED is greatly improved, wherein Mg is used for increasing the luminous efficiency of the LED3N2The layer improves Mg atomic concentration for the concentration in hole improves, and the InGaN layer can improve the conduction efficiency in hole, accelerates the mobility rate in hole, makes the hole can reach the luminescent layer fast and compound with the electron, and the articulamentum can stabilize and connect InGaN layer and Mg3N2And the structure is compact.
(2) The protective layer is the P-type GaN layer, the superlattice layer is protected by the P-type GaN layer, and meanwhile, a certain amount of holes can be provided for the light-emitting layer by the P-type GaN layer, so that the hole concentration is improved.
(3) The protective layer is also sequentially provided with the ITO layer and the insulating layer, so that the LED structure is more compact and can form a complete semiconductor structure.
(4) The thickness of the superlattice layer is 75-150 nm; more holes are generated and can rapidly move to the light-emitting layer for recombination.
(5) The luminescent layer of the invention comprises a luminescent working layer and at least one luminescent monomer; the light-emitting monomer is In stacked arrangementxGa(1-x)An N layer and a SiGaN layer; said InxGa(1-x)The N layer is positioned on one side close to the first semiconductor layer; the luminous working layer is arranged on the luminous monomer, and electrons can pass through the luminous working layer conveniently by arranging the luminous layer containing Si.
The invention also discloses a growth method of the LED epitaxial structure, which comprises the following steps: growing a first semiconductor layer on a substrate; step two: growing a light emitting layer on the first semiconductor layer; step three: growing a composite layer on the light-emitting layer; in the third step, the composite layer comprises a second semiconductor layer, a superlattice layer and a protective layer which are sequentially stacked and grown; the second semiconductor layer is grown on the light-emitting layer; the superlattice layer comprises at least one superlattice monomer; the superlattice monomer comprises an InGaN layer, a connecting layer and Mg which are grown in sequence3N2A layer; the InGaN layer is grown on a side close to the second semiconductor layer, and the protective layer is grown on the superlattice layer.
In the third step, the superlattice layer comprises a plurality of superlattice monomers which are grown in a stacked mode, and the number of the superlattice monomers is 15-30.
The specific growth method of the InGaN layer is as follows: keeping the pressure of the reaction chamber at 200-3300-600sccm TEGa, 100-130L/min N2And 100-.
The specific growth method of the connecting layer comprises the following steps: keeping the pressure of the reaction chamber at 400-3400-1000L/min TEGa and 2000-4000sccm Cp2And Mg, and growing a connecting layer with the thickness of 1-2 nm.
The Mg3N2The specific growth method of the layer is as follows: the pressure of the reaction cavity is kept at 400-600mbar,keeping the temperature at 950-1000 ℃, and introducing NH with the flow rate of 50000-70000sccm3100-130L/min N2And 1000 Cp of 1300sccm2Mg, 2-3nm grown Mg3N2And (3) a layer.
According to the growth method, the superlattice layer grows on the second semiconductor layer, so that the hole concentration can be improved, the hole and electron recombination efficiency is greatly improved, and the growth parameters of the superlattice layer are easy to control.
In addition to the objects, features and advantages described above, other objects, features and advantages of the present invention are also provided. The present invention will be described in further detail below with reference to the drawings.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this application, illustrate embodiments of the invention and, together with the description, serve to explain the invention and not to limit the invention. In the drawings:
fig. 1 is a schematic view of an LED epitaxial structure of the present embodiment 1;
wherein, 1, a substrate; 2. a first semiconductor layer; 2.1, a buffer layer; 2.2, a U-shaped GaN layer; 2.3, an N-type GaN layer; 3. a light emitting layer; 3.1, InxGa(1-x)N layers; 3.2, a SiGaN layer; 4. a second semiconductor layer; 4.1, a P-type AlGaN layer; 4.2, a P-type GaN layer; 5. a superlattice layer; 5.1, InGaN layer; 5.2, connecting layers; 5.3 Mg3N2A layer; 6. a protective layer; 7. an ITO layer; 8. an insulating layer; 9. a P electrode; 10. and an N electrode.
Detailed Description
Embodiments of the invention will be described in detail below with reference to the drawings, but the invention can be implemented in many different ways, which are defined and covered by the claims.
Example 1:
an LED epitaxial structure comprises a substrate 1, and a first semiconductor layer 2, a light-emitting layer 3, a composite layer, an ITO layer 6 and an insulating layer 7 which are sequentially arranged on the substrate, as shown in figure 1;
the first semiconductor layer 2 comprises a buffer layer 2.1, a U-shaped GaN layer 2.2 and an N-shaped GaN layer 2.3; the buffer layer is arranged on the substrate; the U-shaped GaN layer and the N-shaped GaN layer are sequentially stacked on the buffer layer.
The luminescent layer 3 comprises a luminescent working layer and at least one luminescent monomer, and the luminescent monomer comprises In which is sequentially stackedxGa(1-x)N-layer 3.1 and SiGaN layer 3.2, where x is 0.1-0.3; said InxGa(1-x)The N layer is positioned on one side close to the N-type GaN layer; the light-emitting working layer is arranged on the light-emitting monomer. The plurality of light-emitting cells are preferably stacked, and the light-emitting operation layer is not shown.
The composite layer comprises a second semiconductor layer 4, a superlattice layer 5 and a protective layer 6; the second semiconductor layer 4 comprises a P-type AlGaN layer 4.1 (namely a P-type aluminum gallium nitride layer) and a P-type GaN layer 4.2 (namely a P-type gallium nitride layer) which are sequentially stacked; the P-type AlGaN layer 4.1 is arranged on the SiGaN layer 3.2 (namely a silicon gallium nitride layer); the superlattice layer comprises at least one superlattice monomer; the superlattice monomer comprises an InGaN layer 5.1 (namely an indium gallium nitride layer), a connecting layer 5.2 and Mg which are sequentially stacked3N2Layer 5.3 (i.e. magnesium nitride layer); the InGaN layer 5.1 is positioned on one side of the P-type GaN layer 4.2 close to the second semiconductor layer; the protective layer 6 is provided on the superlattice layer.
Preferably, the protection layer 6 is a P-type GaN layer (i.e., the protection layer includes P-type GaN material).
The ITO layer 6 and the insulating layer 7 (preferably SiO)2Layers) are sequentially stacked on the protective layer 6.
Preferably, a plurality of superlattice monomers are stacked, and the thickness of the superlattice layer is 75-150 nm.
This embodiment 1 further discloses a method for growing an LED epitaxial structure, in which MOCVD is used to grow an LED epitaxial wafer, and high-purity H is used2Or high purity N2Or high purity H2And high purity N2The mixed gas of (2) is used as a carrier gas, high-purity NH3As the N source, a metal organic source, trimethyl gallium (TMGa) as the gallium source, trimethyl indium (TMIn) as the indium source, and an N-type dopant, Silane (SiH)4) Trimethylaluminum (TMAl) as the aluminum source and magnesium diclocene (Cp) as the P-type dopant2Mg), the substrate is an AlN template substrate, and the reaction pressure is inBetween 70mbar and 900mbar, see fig. 1, the specific growth steps are as follows:
step A1: processing a substrate 1
Step A1.1: processing the substrate:
keeping the pressure of the reaction cavity at 100-300mbar (mbar represents a pressure unit), and introducing 100-130L/min H under the hydrogen atmosphere at the temperature of 1000-1100 DEG C2And processing the substrate for 8-10 min.
And B: growing a first semiconductor layer 2 on a substrate 1 (the first semiconductor layer 2 includes a buffer layer 2.1, a U-type GaN layer 2.2, and an N-type GaN layer 2.3)
Step B1.1: growth of a buffer layer 2.1 on a substrate 1:
the temperature is reduced to 500-3TMGa of 50-100sccm and H of 100-130L/min2A low-temperature buffer layer (nitride semiconductor layer, i.e., GaN layer) having a thickness of 20-40nm is grown on the substrate.
Step B1.1.1: etching the low-temperature buffer layer into an irregular island shape:
keeping the pressure of the reaction chamber at 300-3And H of 100L/min-130L/min2(ii) a Keeping the temperature at 300-500 ℃, and corroding the low-temperature buffer layer into an irregular island shape.
Step B1.2: growing a U-shaped GaN layer 2.2 on the buffer layer 2.1:
keeping the pressure of the reaction chamber at 300-3200-400sccm TMGa and 100-130L/min H2And continuously growing an undoped GaN layer (namely, a U-shaped GaN layer) with the thickness of 2-4 mu m.
Step B1.3: growing an N-type GaN layer 2.3 on the U-type GaN layer 2.2:
the pressure of the reaction chamber is kept at 300-3200-400sccm TMGa, 100-130L/min H2And 20-50sccm SiH4Continuously growing a 3-4 μm Si-doped N-type GaN layerSi doping concentration 5E18-1E19(1E19 represents the power of 19 of 10, and so on);
keeping the pressure and temperature of the reaction chamber constant, and introducing NH with the flow rate of 30000-3200-400sccm TMGa, 100-130L/min H2And SiH of 2-10sccm4The growth of 200-400nm Si-doped N-type GaN layer with Si doping concentration of 5E17-1E18 is continued.
And C: a luminescent layer 3 is grown on the N-type GaN layer 2.3 (the luminescent layer comprises a luminescent working layer and at least one luminescent monomer which is In a laminated growth modexGa(1-x)N layer 3.1 and SiGaN layer 3.2, the light emitting working layer is grown on the light emitting monomer), wherein the growth of the light emitting layer comprises a first growth phase, a second growth phase and a third growth phase:
step C1.1: in the first growth stage, 4-6 light-emitting monomers are grown on the N-type GaN layer 2.3:
keeping the pressure of the reaction chamber at 300-3200-400sccm TEGa, 600-800sccm TMIn and 100-130L/min N2Growing 1.5-2.0nm In doped with In on the N-type GaN layerxGa(1-x)N layer (in this case, x is preferably 0.10 to 0.15);
then the pressure of the reaction chamber is kept at 300-3800-1000sccm TEGa and 100-130L/min N2While introducing SiH of 1-2sccm4InxGa(1-x)Growing a SiGaN layer with the thickness of 4-8nm on the N layer;
then repeating the alternate growth of InxGa(1-x)N layer and SiGaN layer, the number of cycles is 4-6 (i.e. 4-6 luminous monomers are grown).
Step C1.2: a second growth stage, wherein 9-10 luminescent monomers are grown on the first growth stage:
keeping the pressure of the reaction cavity at 300-3TEGa of 100-2In doped with In of 3.5-4.2nm is grownxGa(1-x)N layer (in this case, x is preferably 0.25)-0.30)；
Then keeping the pressure of the reaction chamber at 300-3800-1000sccm TEGa and 100-130L/min N2While introducing SiH of 0.5-1sccm4InxGa(1-x)Growing a SiGaN layer with the thickness of 12-14nm on the N layer;
then repeating the alternate growth of InxGa(1-x)N layer and SiGaN layer, the number of cycles is 9-10 (i.e. 9-10 luminous monomers are grown).
Step C1.3: a third growth stage for growing In on the second growth stagexGa(1-x)Layer (i.e. growth light-emitting working layer):
keeping the pressure of the reaction cavity at 300-3TEGa of 100-2In doped with In of 3.5-4.2nm is grownxGa(1-x)N layer (in this case, x is preferably 0.25 to 0.30).
Step D: growing a composite layer on the light-emitting layer; the composite layer comprises a second semiconductor layer 4, a superlattice layer 5 and a protective layer 6 which are sequentially grown on the light-emitting layer 3;
step D1.1: a second semiconductor layer 4 (the second semiconductor layer includes a P-type AlGaN layer 4.1 and a P-type GaN layer 4.2) is grown on the light emitting layer 3:
step D1.1.1: a P-type AlGaN layer 4.1 is grown on the light emitting layer 3 (specifically, the light emitting working layer):
keeping the pressure of the reaction chamber at 300-3800-1000sccm TEGa and 100-130L/min N2Simultaneously introducing 50-60sccm TMAl, and growing a 16-20nm P-type AlGaN layer with Al doping concentration of 1E20-3E 20;
then the pressure of the reaction chamber is kept at 200-3TMGa 30-60sccm, H100-130L/min2100-TMAl of 130sccm and 1000-Cp of 1300sccm2And Mg, continuously growing a P-type AlGaN layer with the thickness of 50-100nm, wherein the Al doping concentration is 1E20-3E20, and the Mg doping concentration is 1E19-1E 20.
Step D1.1.2: growing a P-type GaN layer 4.2 on the P-type AlGaN layer 4.1:
keeping the pressure of the reaction cavity at 400-320-100sccm of TMGa, 100-2And 1000-Cp of 3000sccm2And Mg, continuously growing a 25-50nm Mg-doped P-type GaN layer 4.2 on the P-type AlGaN layer 4.1, wherein the Mg doping concentration is 1E19-1E 20.
Step D1.2: a superlattice layer 5 with a thickness of 75-150nm is grown on the P-type GaN layer 4.2 (the superlattice layer comprises at least one superlattice monomer comprising an InGaN layer 5.1, a connection layer 5.2 and Mg grown in sequence3N2Layer 5.3), in particular: 15-30 superlattice monomers are grown on the second semiconductor layer (specifically the P-type GaN layer 4.2), and the InGaN layer, the connection layer and the Mg layer are formed3N2The growth order of the layers is not reversible, and the growth of the superlattice monomers is as follows:
step D1.2.1: growing an InGaN layer 5.1:
keeping the pressure of the reaction cavity at 200-3300-600sccm TEGa, 100-130L/min N2And 100-.
Step D1.2.2: growth of the connecting layer 5.2:
keeping the pressure of the reaction cavity at 400-3400-1000L/min TEGa and 2000-4000sccm Cp2Mg, growing a connecting layer (P-type nitride layer, namely a P-type GaN layer) with the doping concentration of 1E21-2E21 of 1-2 nm.
Step D1.2.3: growing Mg3N2Layer 5.3:
keeping the pressure of the reaction chamber at 400-3100-130L/min N2And 1000 Cp of 1300sccm2Mg, 2-3nm grown Mg3N2And (3) a layer.
Step D1.3: growing a protective layer 6 on the superlattice layer:
maintenance reactionThe cavity pressure is 400-320-100sccm of TMGa, 100-2And 1000-Cp of 3000sccm2And Mg, continuously growing a 25-50nm Mg-doped protective layer (a P-type nitride layer, namely a P-type GaN layer) on the superlattice layer, wherein the Mg doping concentration is 1E19-1E 20.
Step E: end of growth
Step E1.1: and (4) finishing growth:
cooling to 650 plus 680 ℃, preserving the heat for 20-30min, then closing the heating system, closing the gas supply system, and cooling along with the furnace.
Preferably, after the protective layer growth is completed, an ITO layer 7 and an insulating layer 8 (e.g., a silicon dioxide layer) are sequentially deposited on the protective layer 6. The N-electrode 10 and the P-electrode 9 are made according to the prior art.
The growth method of example 1 produces samples 2 and 3:
example 2:
example 2 differs from example 1 in that: example 2 a superlattice layer is not grown on the second semiconductor layer.
Sample 1 was prepared according to the growth method of example 2.
Wherein, the samples 1, 2 and 3 were plated with ITO layer 150nm under the same process conditions, Cr/Pt/Au electrode 1500nm under the same conditions, and insulating layer (SiO) under the same conditions2Layer) 100nm, and then under the same conditions, the sample was ground and cut into 635 μm by 635 μm (i.e., 25mil by 25mil) chip particles, 100 dies were individually picked at the same positions on the samples prepared in example 1 and example 2, and packaged into a white LED under the same packaging process. The photoelectric property parameters of sample 1, sample 2 and sample 3 were then measured using an integrating sphere at a drive current of 350mA (averaged over 100 grains) to obtain table 1.
TABLE 1 table of electrical parameters for sample 1, sample 2 and sample 3
Detecting items Brightness of light Voltage of Directional voltage Wavelength of light emission Leakage of electricity Antistatic 8KV yield
Sample
1 130.01Lm/w 3.066V 34.99V 531.0nm 0.040μA 90.5％
Sample
2 140.31Lm/w 3.01V 35.54V 531.5nm 0.036μA 91.5％
Sample
3 137.31Lm/w 3.05V 34.54V 531.2nm 0.033μA 90.7％
As can be seen from table 1, the superlattice layer is grown on the second semiconductor layer in the samples 2 to 3, so that the brightness of the samples 2 to 3 is improved by more than 7Lm/w compared with that of the sample 1, that is, the hole concentration can be effectively improved by the growth method in this embodiment 1, so that the recombination efficiency of electrons and holes is improved, and the light emitting brightness of the LED is significantly improved.
The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.

Claims (10)

1. An LED epitaxial structure is characterized by comprising a substrate (1), and a first semiconductor layer (2), a light-emitting layer (3) and a composite layer which are sequentially stacked on the substrate (1); the composite layer comprises a second semiconductor layer (4), a superlattice layer (5) and a protective layer (6) which are sequentially stacked; the second semiconductor layer (4) is arranged on the light-emitting layer (3);
the superlattice layer (5) comprises at least one superlattice monomer; the superlattice monomer comprises an InGaN layer (5.1), a connecting layer (5.2) and Mg which are sequentially stacked3N2A layer (5.3); the InGaN layer (5.1) is located on the side close to the second semiconductor layer (4), and the protective layer (6) is arranged on the superlattice layer (5).
2. LED epitaxy structure according to claim 1, characterised in that the protection layer (6) is a P-type GaN layer.
3. LED epitaxy structure according to claim 2, characterised in that an ITO layer (7) and an insulating layer (8) are also laminated in sequence on the protective layer (6).
4. LED epitaxy structure according to claim 1, characterised in that the superlattice layer (5) comprises a plurality of superlattice monomers arranged in a stack, the superlattice layer having a thickness of 75-150 nm.
5. LED epitaxial structure according to claim 1, characterized in that the light emitting layer (3) comprises a light emitting working layer and at least one light emitting monomer; the light-emitting monomer comprises In arranged In a laminated mannerxGa(1-x)An N layer (3.1) and a SiGaN layer (3.2), wherein x is 0.1-0.3, InxGa(1-x)The N layer (3.1) is positioned on one side close to the first semiconductor layer (2); the light-emitting working layer is arranged on the light-emitting monomer.
6. A growth method of an LED epitaxial structure is characterized by comprising the following steps;
the method comprises the following steps: growing a first semiconductor layer (2) on a substrate (1);
step two: growing a light-emitting layer (3) on the first semiconductor layer (2);
step three: growing a composite layer on the light-emitting layer (3);
in the third step, the composite layer comprises a second semiconductor layer (4), a superlattice layer (5) and a protective layer (6) which are sequentially stacked; the second semiconductor layer (4) is grown on the light-emitting layer (3); the superlattice layer (5) comprises at least one superlattice monomer; the superlattice monomer comprises an InGaN layer (5.1), a connecting layer (5.2) and Mg which are grown in sequence3N2A layer (5.3); the InGaN layer (5.1) is grown on the side close to the second semiconductor layer (4), and the protective layer (6) is grown on the superlattice layer (5).
7. The growth method of the LED epitaxial structure according to claim 6, wherein in the third step, the superlattice layer (5) comprises a plurality of superlattice monomers which are grown in a stacked manner, and the number of the superlattice monomers is 15-30.
8. LED epitaxial structure growth method according to claim 7, characterized in that the specific growth method of the InGaN layer (5.1) is:
keeping the pressure of the reaction chamber at 200-3300-600sccm TEGa, 100-130L/min N2And 100-.
9. LED epitaxial structure growth method according to claim 8, characterized in that the specific growth method of the connection layer (5.2) is:
keeping the pressure of the reaction chamber at 400-3400-1000L/min TEGa and 2000-4000sccm Cp2Mg, growing a connecting layer (5.2) with the thickness of 1-2 nm.
10. The method for growing an LED epitaxial structure according to claim 9, wherein the Mg is added3N2The specific growth method of the layer (5.3) is:
keeping the pressure of the reaction cavity at 400-3100-130L/min N2And 1000 Cp of 1300sccm2Mg, 2-3nm grown Mg3N2Layer (5.3).
CN202011308870.7A 2020-11-20 2020-11-20 LED epitaxial structure and growth method Pending CN112436076A (en)

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