CN110379895A - LED epitaxial growth method - Google Patents

LED epitaxial growth method Download PDF

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CN110379895A
CN110379895A CN201910676755.6A CN201910676755A CN110379895A CN 110379895 A CN110379895 A CN 110379895A CN 201910676755 A CN201910676755 A CN 201910676755A CN 110379895 A CN110379895 A CN 110379895A
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CN110379895B (en
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徐平
胡耀武
龚彬彬
黄胜蓝
蒋东风
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Xiangneng Hualei Optoelectrical Co Ltd
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Abstract

This application discloses a kind of LED epitaxial growth methods, successively include: processing substrate, growing low temperature nucleating layer GaN, growth high temperature GaN buffer layer, growth is u-GaN layers undoped, grows N2And H2InGaN:Zn layers of mixed atmosphere low temperature AI, growth H2InGaN:Si layers of atmosphere medium temperature, growth N2GaN:Mg layers of atmosphere high temperature, growth luminescent layer, growing P-type AlGaN layer, growth P-type GaN layer, growth P-type GaN contact layer, cooling down.The method of the present invention is by introducing N2And H2InGaN:Zn layers of mixed atmosphere low temperature AI, H2InGaN:Si layers of atmosphere medium temperature, N2The structure that GaN:Mg layers of atmosphere high temperature enhances luminous radiation efficiency, improves the luminous efficiency of LED, and reduce epitaxial wafer warpage to promote the electron hole pair of Quantum Well luminous zone.

Description

LED epitaxial growth method
Technical field
This application involves LED epitaxial scheme applied technical fields, specifically, being related to a kind of LED epitaxial growth method.
Background technique
LED (Light Emitting Diode, light emitting diode) is a kind of solid state lighting, small in size, power consumption is low makes With service life long high brightness, environmental protection, it is sturdy and durable the advantages that by the majority of consumers approve, the scale of domestic production LED also by Step expands；Demand in the market to LED luminance and light efficiency is growing day by day, and client is concerned with LED more power saving, and brightness is higher, light Effect is more preferable, this is just that more stringent requirements are proposed for LED epitaxial growth.
Currently, LED requires LED chip driving voltage low now in the market, driving voltage is smaller more especially under high current Well, the higher the better for light efficiency；LED market value is presented as (light efficiency)/unit price, and light efficiency is better, and price is higher, so LED bloom Effect is always the target that LED producer and LED research institute, universities and colleges are pursued.And major part producer has produced the size of LED at present Upgrade to 4 inches via 2 inches.After LED size upgrades to 4 inches, the generally existing epitaxial wafer warpage of LED is big, luminous efficiency is low Inferior technical problem.
Therefore, how the luminous efficiency of LED is improved by LED epitaxial growth, and reduce epitaxial wafer warpage, become at this stage Technical problem urgently to be resolved.
Summary of the invention
In view of this, the technical problem to be solved by the application is to provide a kind of LED epitaxial growth methods, traditional N-type GaN layer is designed as N2And H2InGaN:Zn layers of mixed atmosphere low temperature AI, H2InGaN:Si layers of atmosphere medium temperature, N2Atmosphere high temperature GaN:Mg layers of structure improves the luminous efficiency of LED to enhance luminous radiation efficiency, and reduces epitaxial wafer warpage.
In order to solve the above-mentioned technical problem, the application has following technical solution:
A kind of LED epitaxial growth method, which is characterized in that successively include: processing substrate, growing low temperature nucleating layer GaN, life Long high temperature GaN buffer layer, growth is u-GaN layers undoped, grows N2And H2InGaN:Zn layers of mixed atmosphere low temperature AI, growth H2Gas InGaN:Si layers of atmosphere medium temperature, growth N2GaN:Mg layers of atmosphere high temperature, growth luminescent layer, growing P-type AlGaN layer, growth P-type GaN Layer, growth P-type GaN contact layer, cooling down, wherein
The growth N2And H2InGaN:Zn layers of mixed atmosphere low temperature AI include:
It is passed through N2、H2And zinc methide DMZn, in N2And H2Mixed atmosphere under, keep growth temperature be 500 DEG C to 550 DEG C, holding growth pressure be 450Torr to 550Torr, and be passed through TMGa, 1200-1400sccm of 50-70sccm TMIn, The TMAl of 100-130sccm, growth thickness are the N of 70nm to 110nm2And H2InGaN:Zn layers of mixed atmosphere low temperature AI, Zn doping Concentration is 2E18atoms/cm3To 5E18atoms/cm3；
The growth H2InGaN:Si layers of atmosphere medium temperature include:
Temperature is increased to 750 DEG C to 850 DEG C, is passed through H2And SiH4, in H2Under atmosphere, keep growth temperature be 750 DEG C extremely 850 DEG C, holding growth pressure is 450Torr to 550Torr, and be passed through TMGa, 900-1000sccm of 80-95sccm TMIn, the H that growth thickness is 60nm to 80nm2InGaN:Si layers of atmosphere medium temperature, Si doping concentration is 1E19atoms/cm3Extremely 3E19atoms/cm3；
The growth N2GaN:Mg layers of atmosphere high temperature include:
Temperature is increased to 1050 DEG C to 1150 DEG C, is passed through N2And CP2Mg, in N2Under atmosphere, keeping growth temperature is 1050 DEG C To 1150 DEG C, holding growth pressure is 450Torr to 550Torr, and is passed through the TMGa of 110-130sccm, and growth thickness is The N of 40nm to 55nm2GaN:Mg layers of atmosphere high temperature, Mg doping concentration is 1E20atoms/cm3To 1E21atoms/cm3。
Optionally, in which:
The processing substrate, specifically: by Sapphire Substrate in H2It anneals in atmosphere, cleans substrate surface, temperature It is 1050 DEG C to 1150 DEG C.
Optionally, in which:
The growing low temperature nucleating layer GaN and growth high temperature GaN buffer layer, specifically:
Temperature is reduced to 500 DEG C to 620 DEG C, reaction cavity pressure 400Torr to 650Torr is kept, is passed through NH3And TMGa, Growth thickness is the low temperature nucleation layer GaN of 20nm to 40nm on a sapphire substrate；
Stopping is passed through TMGa, carries out in-situ annealing processing, and annealing temperature is increased to 1000 DEG C to 1100 DEG C, and annealing time is 5min to 10min；
After annealing, the temperature was then adjusted to 900 DEG C to 1050 DEG C, continue to be passed through TMGa, epitaxial growth with a thickness of 0.2 μm extremely 1 μm of high temperature GaN buffer layer, growth pressure are controlled in 400Torr-650Torr.
Optionally, in which:
Undoped u-GaN layers of the growth, specifically:
1050 DEG C to 1200 DEG C are increased the temperature to, reaction cavity pressure 100Torr-500Torr is kept, is passed through NH3With TMGa, continued propagation is with a thickness of undoped u-GaN layers of 1 μm to 3 μm.
Optionally, in which:
The growth luminescent layer, specifically:
Keep reaction cavity pressure 100Torr to 500Torr, 700 DEG C to 800 DEG C of temperature, the source MO used be TEGa, TMIn and SiH4, the quantum well layer In with a thickness of 2nm to 5nm of growth doping InyGa (1-y)N, y=0.1 are to 0.3；
Then temperature is increased to 800 DEG C to 950 DEG C, keeps reaction cavity pressure 100Torr to 500Torr, the source MO used is TEGa, TMIn and SiH4, growth thickness is the barrier layer GaN of 8nm to 15nm, and barrier layer GaN carries out Si doping, and Si doping concentration is 8E16atoms/cm3To 6E17atoms/cm3；
Repeat InyGa(1-y)The growth of N, the then repeatedly growth of GaN, alternating growth InyGa(1-y)N/GaN luminescent layer, control Periodicity processed is 5 to 15.
Optionally, in which:
The growing P-type AlGaN layer, specifically:
Keep reaction cavity pressure 20Torr to 200Torr, 900 DEG C to 1100 DEG C of temperature, be passed through the source MO be TMAl, TMGa and CP2Mg, for continued propagation with a thickness of AlGaN layers of p-type of 50nm to 200nm, growth time is 3min to 10min, mole group of Al It is divided into 10% to 30%, Mg doping concentration 1E18atoms/cm3-1E21atoms/cm3。
Optionally, in which:
The growth P-type GaN layer, specifically:
Keep reaction cavity pressure 100Torr to 500Torr, 850 DEG C to 1000 DEG C of temperature, be passed through the source MO be TMGa and CP2Mg, p-type GaN layer of the continued propagation with a thickness of 100nm to 800nm, Mg doping concentration 1E18atoms/cm3-1E21atoms/ cm3。
Optionally, in which:
The growth P-type GaN contact layer, specifically:
Keep reaction cavity pressure 100Torr to 500Torr, 850 DEG C to 1050 DEG C of temperature, be passed through the source MO be TEGa and CP2Mg, p-type GaN contact layer of the continued propagation with a thickness of the doping Mg of 5nm to 20nm, Mg doping concentration 1E19atoms/cm3- 1E22atoms/cm3。
Optionally, in which:
The cooling down, specifically:
After epitaxial growth, temperature when reacting is down to 650 DEG C to 800 DEG C, using pure N2Atmosphere carries out at annealing 5min to 10min is managed, room temperature is then down to, terminates growth.
Compared with prior art, method described herein achieving the following effects:
The first, LED epitaxial growth method of the present invention, is compared with the traditional method, and traditional GaN layers of N-shaped, is designed as N2 And H2InGaN:Zn layers of mixed atmosphere low temperature AI, H2InGaN:Si layers of atmosphere medium temperature and N2GaN:Mg layers of structure of atmosphere high temperature, mesh Be in the region near Quantum Well, first pass through growth N2And H2InGaN:Zn layers of mixed atmosphere low temperature AI, more sky can be provided Cave enters quantum well region, while N2And H2Under mixed atmosphere, atom is relatively inaccessible to substrate surface reactions, and cross growth is pressed down System, can form thicker interface, be more advantageous to the reflecting light of Quantum Well.Then H is grown2InGaN:Si layers of atmosphere medium temperature, add Fast cross growth, and fill up low temperature N2And H2The pits defect of atmosphere growth.Finally by high temperature GaN:Mg layers of growth, Ke Yiyou Effect promotes hole concentration, and the difficulty that electronics is revealed to p-type is gradually increased, and preferably electronics can be inhibited to leak out Quantum Well Luminous zone, moreover it is possible to effectively push the sub- trap luminous zone of hole injection fluence, promote the electron hole pair of Quantum Well luminous zone, enhancing shines Radiation efficiency improves the luminous efficiency of LED.
The second, LED epitaxial growth method of the present invention is by introducing N2And H2InGaN:Zn layers of mixed atmosphere low temperature AI, H2Gas InGaN:Si layers of atmosphere medium temperature and N2GaN:Mg layers of structure of atmosphere high temperature are conducive to eliminate large-size sapphire substrate to GaN film Cumulative stress effect, can significantly increase epitaxial film material stress control window have so as to reduce epitaxial wafer warpage Conducive to the qualification rate of raising GaN epitaxy piece, and improve LED luminous efficiency and antistatic effect.
Detailed description of the invention
The drawings described herein are used to provide a further understanding of the present application, constitutes part of this application, this Shen Illustrative embodiments and their description please are not constituted an undue limitation on the present application for explaining the application.In the accompanying drawings:
Fig. 1 is the structural schematic diagram of LED epitaxial layer in the present invention；
Fig. 2 is the structural schematic diagram of LED epitaxial layer in comparative example；
Wherein, 1, substrate, 2, low temperature nucleation layer GaN, 3, buffer layer GaN, 4, u-GaN layers, 5, N2And H2Mixed atmosphere is low It is AlInGaN:Zn layers warm, 6, H2InGaN:Si layers of atmosphere medium temperature, 7, N2GaN:Mg layers of atmosphere high temperature, 8, luminescent layer, 9, p-type AlGaN layer, 10, p-type GaN layer, 11, p-type GaN contact layer；12, n-GaN layers of tradition.
Specific embodiment
As used some vocabulary to censure specific components in the specification and claims.Those skilled in the art answer It is understood that hardware manufacturer may call the same component with different nouns.This specification and claims are not with name The difference of title is as the mode for distinguishing component, but with the difference of component functionally as the criterion of differentiation.Such as logical The "comprising" of piece specification and claim mentioned in is an open language, therefore should be construed to " include but do not limit In "." substantially " refer within the acceptable error range, those skilled in the art can within a certain error range solve described in Technical problem basically reaches the technical effect.Specification subsequent descriptions are to implement the better embodiment of the application, so described Description is being not intended to limit the scope of the present application for the purpose of the rule for illustrating the application.The protection scope of the application As defined by the appended claims.
Embodiment 1
The Application Example of LED epitaxial growth method of the invention presented below, epitaxial structure are referring to Fig. 1, Fig. 1 The structural schematic diagram of LED epitaxial layer in the present invention, growing method is referring to Fig. 1.The application grows highlighted with VEECO MOCVD Spend GaN base LED epitaxial wafer.Using high-purity H2Or high-purity N2Or high-purity H2And high-purity N2Mixed gas as carrier gas, high-purity N H3 (NH3Purity 99.999%) it is the source N, metal organic source trimethyl gallium (TMGa) and metal have good luck triethyl-gallium (TEGa) work For gallium source, trimethyl indium (TMIn) is used as indium source, and N type dopant is silane (SiH4), trimethyl aluminium (TMAl) is used as silicon source, P Type dopant is two luxuriant magnesium (CP2Mg), substrate is (0001) surface sapphire, and reaction pressure is between 100Torr to 1000Torr. Specific growth pattern is as follows:
Step 1, processing substrate 1:
Sapphire Substrate 1 is annealed in hydrogen atmosphere, cleans substrate surface, temperature is 1050 DEG C to 1150 DEG C.
Step 2, growing low temperature nucleating layer GaN2:
Temperature is reduced to 500 DEG C to 620 DEG C, reaction cavity pressure 400Torr to 650Torr is kept, is passed through NH3And TMGa, Growth thickness is the low temperature nucleation layer GaN2 of 20nm to 40nm on a sapphire substrate.
Step 3, high temperature GaN buffer layer 3 is grown:
Stopping is passed through TMGa, carries out in-situ annealing processing, and annealing temperature is increased to 1000 DEG C to 1100 DEG C, and annealing time is 5min to 10min；
After annealing, the temperature was then adjusted to 900 DEG C to 1050 DEG C, continue to be passed through TMGa, epitaxial growth with a thickness of 0.2 μm extremely 1 μm of high temperature GaN buffer layer 3, growth pressure are controlled in 400Torr-650Torr.
Step 4, the undoped u-GaN layer 4 of growth:
1050 DEG C to 1200 DEG C are increased the temperature to, reaction cavity pressure 100Torr-500Torr is kept, is passed through NH3With TMGa, continued propagation is with a thickness of 1 μm to 3 μm of undoped u-GaN layer 4.
Step 5, growth N2And H2Mixed atmosphere low temperature AI InGaN:Zn layer 5:
It is passed through N2、H2And zinc methide DMZn, in N2And H2Mixed atmosphere under, keep growth temperature be 500 DEG C to 550 DEG C, holding growth pressure be 450Torr to 550Torr, and be passed through TMGa, 1200-1400sccm of 50-70sccm TMIn, The TMAl of 100-130sccm, growth thickness are the N of 70nm to 110nm2And H2Mixed atmosphere low temperature AI InGaN:Zn layer 5, Zn mixes Miscellaneous concentration is 2E18atoms/cm3To 5E18atoms/cm3。
In the application, 2E18 represents 2 multiplied by 10 18 powers i.e. 1*1018, and so on, atoms/cm3For doping Concentration unit, similarly hereinafter.
Step 6, growth H2Atmosphere medium temperature InGaN:Si layer 6:
Temperature is increased to 750 DEG C to 850 DEG C, is passed through H2And SiH4, in H2Under atmosphere, keep growth temperature be 750 DEG C extremely 850 DEG C, holding growth pressure is 450Torr to 550Torr, and be passed through TMGa, 900-1000sccm of 80-95sccm TMIn, the H that growth thickness is 60nm to 80nm2Atmosphere medium temperature InGaN:Si layer 6, Si doping concentration are 1E19atoms/cm3Extremely 3E19atoms/cm3。
Step 7, growth N2Atmosphere high temperature GaN:Mg layer 7:
Temperature is increased to 1050 DEG C to 1150 DEG C, is passed through N2And CP2Mg, in N2Under atmosphere, keeping growth temperature is 1050 DEG C To 1150 DEG C, holding growth pressure is 450Torr to 550Torr, and is passed through the TMGa of 110-130sccm, and growth thickness is The N of 40nm to 55nm2Atmosphere high temperature GaN:Mg layer 7, Mg doping concentration are 1E20atoms/cm3To 1E21atoms/cm3。
Step 8, growth luminescent layer 8:
Keep reaction cavity pressure 100Torr to 500Torr, 700 DEG C to 800 DEG C of temperature, the source MO used be TEGa, TMIn and SiH4, the quantum well layer In with a thickness of 2nm to 5nm of growth doping InyGa (1-y)N, y=0.1 are to 0.3；
Then temperature is increased to 800 DEG C to 950 DEG C, keeps reaction cavity pressure 100Torr to 500Torr, the source MO used is TEGa, TMIn and SiH4, growth thickness is the barrier layer GaN of 8nm to 15nm, and barrier layer GaN carries out Si doping, and Si doping concentration is 8E16atoms/cm3To 6E17atoms/cm3；
Repeat InyGa(1-y)The growth of N, the then repeatedly growth of GaN, alternating growth InyGa(1-y)N/GaN luminescent layer 8, Controlling periodicity is 5 to 15.
Step 9, growing P-type AlGaN layer 9:
Keep reaction cavity pressure 20Torr to 200Torr, 900 DEG C to 1100 DEG C of temperature, be passed through the source MO be TMAl, TMGa and CP2Mg, for continued propagation with a thickness of the p-type AlGaN layer 9 of 50nm to 200nm, growth time is 3min to 10min, mole of Al Group is divided into 10% to 30%, Mg doping concentration 1E18atoms/cm3-1E21atoms/cm3。
Step 10, growth P-type GaN layer 10:
Keep reaction cavity pressure 100Torr to 500Torr, 850 DEG C to 1000 DEG C of temperature, be passed through the source MO be TMGa and CP2Mg, p-type GaN layer 10 of the continued propagation with a thickness of 100nm to 800nm, Mg doping concentration 1E18atoms/cm3- 1E21atoms/cm3。
Step 11, growth P-type GaN contact layer 11:
Keep reaction cavity pressure 100Torr to 500Torr, 850 DEG C to 1050 DEG C of temperature, be passed through the source MO be TEGa and CP2Mg, p-type GaN contact layer 11 of the continued propagation with a thickness of the doping Mg of 5nm to 20nm, Mg doping concentration 1E19atoms/cm3- 1E22atoms/cm3。
Step 12, cooling down:
After epitaxial growth, temperature when reacting is down to 650 DEG C to 800 DEG C, using pure N2Atmosphere carries out at annealing 5min to 10min is managed, room temperature is then down to, terminates growth.
Embodiment 2
For a kind of routine LED epitaxial growth method presented below as comparative example of the invention, Fig. 2 is that comparison is implemented The structural schematic diagram of LED epitaxial layer in example.
The growing method of conventional LED extension is (epitaxial layer structure is referring to fig. 2):
1, Sapphire Substrate 1 is annealed in hydrogen atmosphere, cleans substrate surface, temperature is 1050 DEG C to 1150 ℃。
2, temperature is reduced to 500 DEG C to 620 DEG C, is kept reaction cavity pressure 400Torr to 650Torr, is passed through NH3With TMGa, growth thickness is the low temperature nucleation layer GaN2 of 20nm to 40nm on a sapphire substrate.
3, stop being passed through TMGa, carry out in-situ annealing processing, annealing temperature is increased to 1000 DEG C to 1100 DEG C, when annealing Between be 5min to 10min；After annealing, the temperature was then adjusted to 900 DEG C to 1050 DEG C, continue to be passed through TMGa, epitaxial growth thickness For 0.2 μm to 1 μm of high temperature GaN buffer layer 3, growth pressure is controlled in 400Torr-650Torr.
4, it protects and increases the temperature to 1050 DEG C to 1200 DEG C, keep reaction cavity pressure 100Torr-500Torr, be passed through NH3With TMGa, continued propagation is with a thickness of 1 μm to 3 μm of undoped u-GaN layer 4.
5, keeping reaction chamber temperature is 1050 DEG C to 1200 DEG C, and keeping reaction cavity pressure is 100Torr-600Torr, is led to Enter NH3, TMGa and SiH4, one layer of doping concentration of continued propagation is stable, the n-GaN layer 12 of Si is adulterated with a thickness of 2 μm to 4 μm, In, Si doping concentration is 8E18atoms/cm3-2E19atoms/cm3。
6, keep reaction cavity pressure 100Torr to 500Torr, 700 DEG C to 800 DEG C of temperature, the source MO used be TEGa, TMIn and SiH4, the quantum well layer In with a thickness of 2nm to 5nm of growth doping InyGa (1-y)N, y=0.1 are to 0.3；
Then temperature is increased to 800 DEG C to 950 DEG C, keeps reaction cavity pressure 100Torr to 500Torr, the source MO used is TEGa, TMIn and SiH4, growth thickness is the barrier layer GaN of 8nm to 15nm, and barrier layer GaN carries out Si doping, and Si doping concentration is 8E16atoms/cm3To 6E17atoms/cm3；
Repeat InyGa(1-y)The growth of N, the then repeatedly growth of GaN, alternating growth InyGa(1-y)N/GaN luminescent layer 8, Controlling periodicity is 5 to 15.
7, keep reaction cavity pressure 20Torr to 200Torr, 900 DEG C to 1100 DEG C of temperature, be passed through the source MO be TMAl, TMGa and CP2Mg, for continued propagation with a thickness of the p-type AlGaN layer 9 of 50nm to 200nm, growth time is 3min to 10min, Al Molar constituent be 10% to 30%, Mg doping concentration 1E18atoms/cm3-1E21atoms/cm3。
8, keep reaction cavity pressure 100Torr to 500Torr, 850 DEG C to 1000 DEG C of temperature, be passed through the source MO be TMGa and Cp2Mg, p-type GaN layer 10 of the continued propagation with a thickness of 100nm to 800nm, Mg doping concentration 1E18atoms/cm3- 1E21atoms/cm3。
9, keep reaction cavity pressure 100Torr to 500Torr, 850 DEG C to 1050 DEG C of temperature, be passed through the source MO be TEGa and CP2Mg, p-type GaN contact layer 11 of the continued propagation with a thickness of the doping Mg of 5nm to 20nm, Mg doping concentration 1E19atoms/ cm3-1E22atoms/cm3。
10, after epitaxial growth, temperature when reacting is down to 650 DEG C to 800 DEG C, is moved back using pure nitrogen gas atmosphere Fire processing 5min to 10min, is then down to room temperature, terminates growth.
Single small size core is made through the Subsequent semiconductors processing technology such as over cleaning, deposition, lithography and etching in epitaxial structure Piece.
On same board, sample 1 is prepared according to the growing method (method of comparative example) of conventional LED, according to The method of this patent description prepares sample 2；Sample 1 and 2 epitaxial growth method parameter difference of sample are traditional N-shaped GaN layer is designed as N2And H2InGaN:Zn layers of mixed atmosphere low temperature AI, H2InGaN:Si layers of atmosphere medium temperature and N2Atmosphere high temperature GaN:Mg layers of structure, other epitaxial growth conditions are just the same.
Sample 1 and sample 2 plate ITO layer about 150nm under identical preceding process conditions, plate Cr/Pt/Au under the same conditions Electrode about 70nm, under the same conditions plating SiO2About 30nm, then at identical conditions by sample grinding and cutting at 762 μm * 762 μm (30mil*30mil) of chip particle, then sample 1 and sample 2 respectively select 150 crystalline substances in same position Grain, under identical packaging technology, is packaged into white light LEDs.Then integrating sphere test specimens under the conditions of driving current 350mA are used The photoelectric properties of product 1 and sample 2.Test sample 1 and sample 2 under the conditions of same LED point measurement machine is in driving current 350mA Photoelectric properties, referring to table 1.Table 1 is the LED test machine opto-electronic test data of sample 1 and sample 2.
1 sample 1 of table and sample 2LED test machine opto-electronic test data
The data that integrating sphere obtains are subjected to analysis comparison, show that sample 2 increases compared with 1 brightness of sample from 488mw from 1 data of table 535mw is added to, sample 2 is reduced to 3.05v from 3.32V compared with 1 driving voltage of sample.Antistatic 4KV ability from 88.4% improve to 94.5%.
In addition, carrying out statistics discovery, 1 fragmentation 36 of sample to the grinding fragmentation situation of 1000 sample 1 and 1000 piece samples 2 Piece, 2 fragmentation of sample 18, i.e. 1 fragment rate of sample are 3.6%, and the fragment rate of sample 2 is 1.8%, is illustrated provided by the invention LED epitaxial growth method can significantly reduce epitaxial wafer angularity, and fragment rate is effectively reduced, and improve product yield.Therefore it can obtain Out to draw a conclusion:
The growing method that this patent provides improves the brightness of LED chip, enhances antistatic effect, reduces driving electricity Pressure, and epitaxial wafer angularity is reduced, fragment rate is effectively reduced, improves product yield.
As can be seen from the above embodiments beneficial effect existing for the application is:
The first, LED epitaxial growth method of the present invention, is compared with the traditional method, and traditional GaN layers of N-shaped, is designed as N2 And H2InGaN:Zn layers of mixed atmosphere low temperature AI, H2InGaN:Si layers of atmosphere medium temperature and N2GaN:Mg layers of structure of atmosphere high temperature, mesh Be in the region near Quantum Well, first pass through growth N2And H2InGaN:Zn layers of mixed atmosphere low temperature AI, more sky can be provided Cave enters quantum well region, while N2And H2Under mixed atmosphere, atom is relatively inaccessible to substrate surface reactions, and cross growth is pressed down System, can form thicker interface, be more advantageous to the reflecting light of Quantum Well.Then H is grown2InGaN:Si layers of atmosphere medium temperature, add Fast cross growth, and fill up low temperature N2And H2The pits defect of atmosphere growth.Finally by high temperature GaN:Mg layers of growth, Ke Yiyou Effect promotes hole concentration, and the difficulty that electronics is revealed to p-type is gradually increased, and preferably electronics can be inhibited to leak out Quantum Well Luminous zone, moreover it is possible to effectively push the sub- trap luminous zone of hole injection fluence, promote the electron hole pair of Quantum Well luminous zone, enhancing shines Radiation efficiency improves the luminous efficiency of LED.
The second, LED epitaxial growth method of the present invention is by introducing N2And H2InGaN:Zn layers of mixed atmosphere low temperature AI, H2Gas InGaN:Si layers of atmosphere medium temperature and N2GaN:Mg layers of structure of atmosphere high temperature are conducive to eliminate large-size sapphire substrate to GaN film Cumulative stress effect, can significantly increase epitaxial film material stress control window have so as to reduce epitaxial wafer warpage Conducive to the qualification rate of raising GaN epitaxy piece, and improve LED luminous efficiency and antistatic effect.
It should be understood by those skilled in the art that, embodiments herein can provide as method, apparatus or computer program Product.Therefore, complete hardware embodiment, complete software embodiment or reality combining software and hardware aspects can be used in the application Apply the form of example.Moreover, it wherein includes the computer of computer usable program code that the application, which can be used in one or more, The computer program implemented in usable storage medium (including but not limited to magnetic disk storage, CD-ROM, optical memory etc.) produces The form of product.
Above description shows and describes several preferred embodiments of the present application, but as previously described, it should be understood that the application Be not limited to forms disclosed herein, should not be regarded as an exclusion of other examples, and can be used for various other combinations, Modification and environment, and the above teachings or related fields of technology or knowledge can be passed through within that scope of the inventive concept describe herein It is modified.And changes and modifications made by those skilled in the art do not depart from spirit and scope, then it all should be in this Shen It please be in the protection scope of appended claims.

Claims (9)

1. a kind of LED epitaxial growth method, which is characterized in that successively include: processing substrate, growing low temperature nucleating layer GaN, growth High temperature GaN buffer layer, growth is u-GaN layers undoped, grows N2And H2InGaN:Zn layers of mixed atmosphere low temperature AI, growth H2Atmosphere InGaN:Si layers of medium temperature, growth N2GaN:Mg layers of atmosphere high temperature, growth luminescent layer, growing P-type AlGaN layer, growth P-type GaN layer, Growth P-type GaN contact layer, cooling down, wherein
The growth N2And H2InGaN:Zn layers of mixed atmosphere low temperature AI include:
It is passed through N2、H2And zinc methide DMZn, in N2And H2Mixed atmosphere under, keep growth temperature be 500 DEG C to 550 DEG C, protect Holding growth pressure is 450Torr to 550Torr, and is passed through TMIn, 100- of TMGa, 1200-1400sccm of 50-70sccm The TMAl of 130sccm, growth thickness are the N of 70nm to 110nm2And H2InGaN:Zn layers of mixed atmosphere low temperature AI, Zn doping concentration For 2E18atoms/cm3To 5E18atoms/cm3；
The growth H2InGaN:Si layers of atmosphere medium temperature include:
Temperature is increased to 750 DEG C to 850 DEG C, is passed through H2And SiH4, in H2Under atmosphere, keeping growth temperature is 750 DEG C to 850 DEG C, Holding growth pressure is 450Torr to 550Torr, and is passed through the TMIn of TMGa, 900-1000sccm of 80-95sccm, growth With a thickness of the H of 60nm to 80nm2InGaN:Si layers of atmosphere medium temperature, Si doping concentration is 1E19atoms/cm3To 3E19atoms/ cm3；
The growth N2GaN:Mg layers of atmosphere high temperature include:
Temperature is increased to 1050 DEG C to 1150 DEG C, is passed through N2And CP2Mg, in N2Under atmosphere, keep growth temperature be 1050 DEG C extremely 1150 DEG C, holding growth pressure is 450Torr to 550Torr, and is passed through the TMGa of 110-130sccm, growth thickness 40nm To the N of 55nm2GaN:Mg layers of atmosphere high temperature, Mg doping concentration is 1E20atoms/cm3To 1E21atoms/cm3。
2. LED epitaxial growth method according to claim 1, which is characterized in that
The processing substrate, specifically: by Sapphire Substrate in H2It anneals in atmosphere, cleans substrate surface, temperature 1050 DEG C to 1150 DEG C.
3. LED epitaxial growth method according to claim 1, which is characterized in that
The growing low temperature nucleating layer GaN and growth high temperature GaN buffer layer, specifically:
Temperature is reduced to 500 DEG C to 620 DEG C, reaction cavity pressure 400Torr to 650Torr is kept, is passed through NH3And TMGa, blue precious Growth thickness is the low temperature nucleation layer GaN of 20nm to 40nm on stone lining bottom；
Stopping is passed through TMGa, carries out in-situ annealing processing, and annealing temperature is increased to 1000 DEG C to 1100 DEG C, annealing time 5min To 10min；
After annealing, the temperature was then adjusted to 900 DEG C to 1050 DEG C, continue to be passed through TMGa, epitaxial growth is with a thickness of 0.2 μm to 1 μm High temperature GaN buffer layer, growth pressure control in 400Torr-650Torr.
4. LED epitaxial growth method according to claim 1, which is characterized in that
Undoped u-GaN layers of the growth, specifically:
1050 DEG C to 1200 DEG C are increased the temperature to, reaction cavity pressure 100Torr-500Torr is kept, is passed through NH3And TMGa, continue Growth thickness is undoped u-GaN layers of 1 μm to 3 μm.
5. LED epitaxial growth method according to claim 1, which is characterized in that
The growth luminescent layer, specifically:
Reaction cavity pressure 100Torr to 500Torr, 700 DEG C to 800 DEG C of temperature are kept, the source MO used is TEGa, TMIn and SiH4, The quantum well layer In with a thickness of 2nm to 5nm of growth doping InyGa(1-y)N, y=0.1 are to 0.3；
Then increase temperature to 800 DEG C to 950 DEG C, keep reaction cavity pressure 100Torr to 500Torr, the source MO used be TEGa, TMIn and SiH4, growth thickness is the barrier layer GaN of 8nm to 15nm, and barrier layer GaN carries out Si doping, and Si doping concentration is 8E16atoms/cm3To 6E17atoms/cm3；
Repeat InyGa(1-y)The growth of N, the then repeatedly growth of GaN, alternating growth InyGa(1-y)N/GaN luminescent layer, control week Issue is 5 to 15.
6. LED epitaxial growth method according to claim 1, which is characterized in that
The growing P-type AlGaN layer, specifically:
Keep reaction cavity pressure 20Torr to 200Torr, 900 DEG C to 1100 DEG C of temperature, be passed through the source MO be TMAl, TMGa and CP2Mg, for continued propagation with a thickness of the p-type AlGaN layer of 50nm to 200nm, growth time is 3min to 10min, mole group of Al It is divided into 10% to 30%, Mg doping concentration 1E18atoms/cm3-1E21atoms/cm3。
7. LED epitaxial growth method according to claim 1, which is characterized in that
The growth P-type GaN layer, specifically:
Reaction cavity pressure 100Torr to 500Torr, 850 DEG C to 1000 DEG C of temperature are kept, being passed through the source MO is TMGa and CP2Mg is held The p-type GaN layer that continuous growth thickness is 100nm to 800nm, Mg doping concentration 1E18atoms/cm3-1E21atoms/cm3。
8. LED epitaxial growth method according to claim 1, which is characterized in that
The growth P-type GaN contact layer, specifically:
Reaction cavity pressure 100Torr to 500Torr, 850 DEG C to 1050 DEG C of temperature are kept, being passed through the source MO is TEGa and CP2Mg is held The p-type GaN contact layer for the doping Mg that continuous growth thickness is 5nm to 20nm, Mg doping concentration 1E19atoms/cm3- 1E22atoms/cm3。
9. LED epitaxial growth method according to claim 1, which is characterized in that
The cooling down, specifically:
After epitaxial growth, temperature when reacting is down to 650 DEG C to 800 DEG C, using pure N2Atmosphere carries out annealing 5min To 10min, it is then down to room temperature, terminates growth.
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