CN107394018A - A kind of LED epitaxial growth methods - Google Patents

A kind of LED epitaxial growth methods Download PDF

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CN107394018A
CN107394018A CN201710681976.3A CN201710681976A CN107394018A CN 107394018 A CN107394018 A CN 107394018A CN 201710681976 A CN201710681976 A CN 201710681976A CN 107394018 A CN107394018 A CN 107394018A
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CN107394018B (en
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徐平
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Xiangneng Hualei Optoelectrical Co Ltd
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Xiangneng Hualei Optoelectrical Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/025—Physical imperfections, e.g. particular concentration or distribution of impurities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
    • H01L33/145—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
    • H01L33/325—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen characterised by the doping materials

Abstract

The invention provides a kind of LED epitaxial growth methods, this method after multiple quantum well layer is grown by first growing one layer of InGaN for adulterating Zn:Zn structure sheafs, stop that electronics migrates to p-type GaN, avoid a large amount of electronics from being leaked out from multiple quantum well layer to P-type layer, so as to improve the electron concentration of multiple quantum well layer；Then by growing the AlGaN of highly doped Mg concentration:The thin barrier layer of Mg, to provide high hole concentration, and hole injection multiple quantum well layer is effectively promoted, increase the electron hole pair quantity of multiple quantum well layer.In addition, mismatched using AlGaN and InGaN lattice, in InGaN:Zn structure sheafs and AlGaN:The interface of the thin barrier layer of Mg produces two-dimensional hole gas, by two-dimensional hole gas, improves hole efficiency extending transversely, further improves the hole Injection Level of multiple quantum well layer, reduce LED operating voltage, improves LED luminous efficiency.

Description

A kind of LED epitaxial growth methods
Technical field
The invention belongs to LED technology field, and in particular to a kind of LED epitaxial growth methods.
Background technology
Light emitting diode (Light-Emitting Diode, LED) is a kind of semi-conductor electricity for converting electrical energy into luminous energy Sub- device.When the current flows, electronics and hole are compound in it and send monochromatic light.LED is as a kind of efficient, environmentally friendly, green Color New Solid lighting source, there is low-voltage, low-power consumption, small volume, in light weight, long lifespan, high reliability, rich in color etc. Advantage.Domestic production LED scale progressively expands at present, but LED still has the problem of efficiency is low.
Traditional LED structure epitaxial growth method, comprises the following steps：
1st, it is 1000-1100 DEG C in temperature, reaction cavity pressure is 100-300mbar, is passed through 100-130L/min H2's Under the conditions of, handle Sapphire Substrate 5-10 minutes；
2nd, growing low temperature GaN cushions, and form irregular island in the low temperature GaN buffer；
3rd, undoped GaN layer is grown；
4th, the first N-type GaN layer of Si doping is grown；
5th, the second N-type GaN layer of Si doping is grown；
6th, Multiple-quantum hydrazine layer is grown；
7th, growing P-type AlGaN layer；
8th, the p-type GaN layer of Mg doping is grown；
9th, 20-30min is incubated under conditions of being 650-680 DEG C in temperature, heating system is then switched off, closes and give gas system System, furnace cooling.
Gallium nitride is semi-conducting material most widely used in LED.Gallium nitride material is pricker zinc ore structure, and material is in itself from pole Change effect and lattice mismatches and produces quantum confined stark effect, as driving current increases, electronic leakage flow phenomenon becomes It is more serious, the raising of LED efficiency is seriously hindered, influences LED energy-saving effect.
Therefore it provides a kind of LED epitaxial growth methods, mitigate the influence of quantum confined stark effect, reduce leakage current, And then LED luminous efficiency is improved, it is the art technical problem urgently to be resolved hurrily.
The content of the invention
In order to solve the technical problem that quantum confined stark effect in background technology influences LED luminous efficiencies, the present invention A kind of LED epitaxial growth methods are disclosed, structure is built by forming asymmetric trap, electronics can be suppressed and leak out MQW Layer, and then suppress the generation of electron leak electric current, and can effectively promote hole to inject multiple quantum well layer, increase the electricity of multiple quantum well layer Sub- hole strengthens luminous radiation efficiency, so as to lift LED brightness to quantity.
To solve the problems, such as in above-mentioned background technology, a kind of LED epitaxial growth methods of the present invention, the LED extensions are to adopt Substrate is carried out with metallochemistry vapour deposition process MOCVD to handle acquisition, comprised the following steps：
It it is 1000-1100 DEG C in temperature, reaction cavity pressure is 100-300mbar, is passed through 100-130L/min H2Bar Under part, Sapphire Substrate 5-10 minutes are handled；
Growing low temperature GaN cushions, and form irregular island in the low temperature GaN buffer；
Grow undoped GaN layer；
Grow the N-type GaN layer of Si doping；
Grow Multiple-quantum hydrazine layer；
It it is 750-900 DEG C in temperature, reaction cavity pressure is 800-950mbar, is passed through 50000-55000sccm NH3、 50-70sccm TMGa, 90-110L/min H2, 1200-1400sccm TMIn, 1000sccm-1500sccm DMZn Under the conditions of, growth thickness is 15-35nm InGaN:Zn structure sheafs, wherein Zn doping concentrations are 1 × 1017atoms/cm3-5× 1017atoms/cm3；
It it is 750-900 DEG C in temperature, reaction cavity pressure is 800-950mbar, is passed through 50000-55000sccm NH3、 50-70sccm TMGa, 90-110L/min H2, 1200-1400sccm TMAl, 800sccm-1050sccm CP2Mg's Under the conditions of, growth thickness is 15-35nm AlGaN:The thin barrier layer of Mg, wherein Mg doping concentrations are 3 × 1017atoms/cm3-6× 1017atoms/cm3；
Growing P-type AlGaN layer；
Grow the p-type GaN layer of Mg doping；
20-30min is incubated under conditions of being 650-680 DEG C in temperature, heating system is then switched off, closes and give gas system, Furnace cooling.
Further, it is 500-600 DEG C in temperature, reaction cavity pressure is 300-600mbar, is passed through 10000- 20000sccm NH3, 50-100sccm TMGa, 100-130L/min H2Under conditions of, it is raw in the Sapphire Substrate The long low temperature buffer layer GaN, the thickness of the low temperature GaN buffer is 20-40nm.
Further, temperature be 1000-1100 DEG C, reaction cavity pressure be 300-600mbar, be passed through 30000- 40000sccm NH3, 100L/min-130L/min H2Under conditions of, do not advised described in formation on the low temperature buffer layer GaN Then island.
Further, it is 1000-1200 DEG C in temperature, reaction cavity pressure is 300-600mbar, is passed through 30000- 40000sccm NH3, 200-400sccm TMGa, 100-130L/min H2Under conditions of, the undoped GaN of growth Layer；The thickness of the undoped GaN layer is 2-4 μm.
Further, the N-type GaN layer, including：First N-type GaN layer and the second N-type GaN layer, wherein,
It it is 1000-1200 DEG C in temperature, reaction cavity pressure is 300-600mbar, is passed through 30000-60000sccm NH3、 200-400sccm TMGa, 100-130L/min H2, 20-50sccm SiH4Under conditions of, described the of growth Si doping One N-type GaN, the first N-type GaN thickness is 3-4 μm, and the concentration of Si doping is 5 × 1018atoms/cm3-1× 1019atoms/cm3；
It it is 1000-1200 DEG C in temperature, reaction cavity pressure is 300-600mbar, is passed through 30000-60000sccm NH3、 200-400sccm TMGa, 100-130L/min H2, 2-10sccm SiH4Under conditions of, described the second of growth Si doping N-type GaN, the second N-type GaN thickness are 200-400nm, and the concentration of Si doping is 5 × 1017atoms/cm3-1× 1018atoms/cm3。
Further, the growth multiple quantum well layer, including：The In of alternating growthxGa(1-x)N well layer and GaN barrier layer, hand over For periodic Control at 7-15.
Further, it is 700-750 DEG C in temperature, reacts cavity pressure 300-400mbar, be passed through 50000-70000sccm NH3, 20-40sccm TMGa, 1500-2000sccm TMIn, 100-130L/min N2Under conditions of, described in growth InxGa(1-x)N well layer,
Wherein, the InxGa(1-x)N thickness is 2.5-3.5nm, and emission wavelength 450-455nm, x span are 0.20-0.25。
Further, it is 750-850 DEG C in temperature, reacts cavity pressure 300-400mbar, be passed through 50000-70000sccm NH3, 20-100sccm TMGa, 100-130L/min N2Under conditions of, the GaN barrier layer is grown, the GaN barrier layer Thickness is 8-15nm.
Further, it is 900-950 DEG C in temperature, reaction cavity pressure is 200-400mbar, is passed through 50000- 70000sccm NH3, 30-60sccm TMGa, 100-130L/min H2, 100-130sccm TMAl, 1000- 1300sccm Cp2Under conditions of Mg, the p-type AlGaN layer is grown, the thickness of the p-type AlGaN layer is 50-100nm,
Wherein, the concentration of Al doping is 1 × 1020atoms/cm3-3×1020atoms/cm3, the concentration of Mg doping for 1 × 1019atoms/cm3-1×1020atoms/cm3。
Further, it is 950-1000 DEG C in temperature, reaction cavity pressure is 400-900mbar, is passed through 50000- 70000sccm NH3, 20-100sccm TMGa, 100-130L/min H2, 1000-3000sccm Cp2Under conditions of Mg, Growth thickness be 50-200nm Mg doped p-type GaN layers, Mg doping concentrations 1 × 1019atoms/cm3-1×1020atoms/cm3。
Compared with prior art, LED epitaxial growth methods described herein, have reached following effect：
The present invention after multiple quantum well layer is grown by first growing one layer of InGaN for adulterating Zn:Zn structure sheafs, stop electronics Migrated to p-type GaN, avoid a large amount of electronics from being leaked out from multiple quantum well layer to P-type layer, it is dense so as to improve the electronics of multiple quantum well layer Degree；Then by growing the AlGaN of highly doped Mg concentration:The thin barrier layer of Mg, to provide high hole concentration, and effectively promote hole Multiple quantum well layer is injected, increases the electron hole pair quantity of multiple quantum well layer.In addition, using AlGaN and InGaN lattice not Match somebody with somebody, in InGaN:Zn structure sheafs and AlGaN:The interface of the thin barrier layer of Mg produces two-dimensional hole gas, by two-dimensional hole gas, improves Hole efficiency extending transversely, the hole Injection Level of multiple quantum well layer is further improved, reduce LED operating voltage, improve LED Luminous efficiency.
Brief description of the drawings
Accompanying drawing described herein is used for providing a further understanding of the present invention, forms the part of the present invention, this hair Bright schematic description and description is used to explain the present invention, does not form inappropriate limitation of the present invention.In the accompanying drawings：
Fig. 1 is the structural representation of the LED extensions prepared using the LED epitaxial growth methods in embodiment 1；
Fig. 2 is the flow chart of the LED epitaxial growth methods in embodiment 1；
Fig. 3 is the structural representation of the LED extensions in embodiment 2；
Fig. 4 is the flow chart of the growing method of the LED extensions in embodiment 2；
Fig. 5 is the LED epitaxial structure schematic diagram of prior art；
Fig. 6 is the LED epitaxial growth methods of prior art.
Embodiment
Some vocabulary has such as been used to censure specific components among specification and claim.Those skilled in the art should It is understood that hardware manufacturer may call same component with different nouns.This specification and claims are not with name The difference of title is used as the mode for distinguishing component, but is used as the criterion of differentiation with the difference of component functionally.Such as logical The "comprising" of piece specification and claim mentioned in is an open language, therefore should be construed to " include but do not limit In "." substantially " refer in receivable error range, those skilled in the art can be described within a certain error range solution Technical problem, basically reach the technique effect.In addition, " coupling " one word is herein comprising any direct and indirect electric property coupling Means.Therefore, if the first device of described in the text one is coupled to a second device, representing the first device can directly electrical coupling The second device is connected to, or the second device is electrically coupled to indirectly by other devices or coupling means.Specification Subsequent descriptions for implement the application better embodiment, so it is described description be for the purpose of the rule for illustrating the application, It is not limited to scope of the present application.The protection domain of the application is worked as to be defined depending on appended claims institute defender.
In addition, this specification does not have the structure that component disclosed in claims and method and step are defined in embodiment Part and method and step.Particularly, size, material, shape, its structural order and the neighbour for the structure member recorded in embodiments Connect order and manufacture method etc. to limit as long as no specific, just only as explanation example, rather than the scope of the present invention is limited Due to this.The size and location relation of structure member shown in accompanying drawing is amplified and shown to clearly illustrate.
The application is described in further detail below in conjunction with accompanying drawing, but not as the restriction to the application.
Embodiment 1
A kind of LED epitaxial growth methods are present embodiments provided, Fig. 1 gives the LED epitaxial growth sides in the present embodiment The structural representation of LED extensions prepared by method, refers to Fig. 1, the LED extensions, including：Sapphire Substrate 101 is grown in successively On low temperature GaN buffer 102, undoped GaN layer 103, N-type GaN layer 104, multiple quantum well layer 105, InGaN:Zn structure sheafs 106、AlGaN:The thin barrier layer 107 of Mg, p-type AlGaN layer 108 and p-type GaN layer 109.Wherein, N-type GaN layer 104 includes the first N-type The N-type GaN layer 1042 of GaN layer 1041 and second；Multiple quantum well layer 105 includes the In of alternating growthxGa(1-x)N well layer 1051 and GaN Barrier layer 1052, alternate cycle control is at 7-15.
The LED epitaxial growth methods that the present embodiment provides, using MOCVD next life long high brightness GaN-based LED, are adopted With high-purity H2Or high-purity N2Or high-purity H2And high-purity N2Mixed gas as carrier gas, high-purity N H3As N sources, metal organic source three Methyl gallium (TMGa) is used as gallium source, and trimethyl indium (TMIn) is used as indium source, and metal organic source zinc methide (DMZn) is used as zinc source, N type dopant is silane (SiH4), trimethyl aluminium (TMAl) is used as silicon source, and P-type dopant is two luxuriant magnesium (CP2Mg), reaction pressure Between 70mbar to 900mbar.Fig. 2 gives the flow chart of the LED epitaxial growth methods in the present embodiment, refers to Fig. 2, This method, including：
Step S201：It it is 1000-1100 DEG C in temperature, reaction cavity pressure is 100-300mbar, is passed through 100-130L/min H2Under conditions of, handle Sapphire Substrate 5-10 minutes.
Step S202：Growing low temperature GaN cushions, and form irregular island in the low temperature GaN buffer.
Step S203：Grow undoped GaN layer.
Step S204：Grow the N-type GaN layer of Si doping；The N-type GaN layer, including：First N-type GaN layer and the second N-type GaN layer.
Step S205：Grow Multiple-quantum hydrazine layer.
Step S206：It it is 750-900 DEG C in temperature, reaction cavity pressure is 800-950mbar, is passed through 50000- 55000sccm NH3, 50-70sccm TMGa, 90-110L/min H2, 1200-1400sccm TMIn, 1000sccm- Under conditions of 1500sccm DMZn, growth thickness is 15-35nm InGaN:Zn structure sheafs, wherein Zn doping concentrations be 1 × 1017atoms/cm3-5×1017atoms/cm3。
Step S207：It it is 750-900 DEG C in temperature, reaction cavity pressure is 800-950mbar, is passed through 50000- 55000sccm NH3, 50-70sccm TMGa, 90-110L/min H2, 1200-1400sccm TMAl, 800sccm- 1050sccm CP2Under conditions of Mg, growth thickness is 15-35nm AlGaN:The thin barrier layer of Mg, wherein Mg doping concentrations be 3 × 1017atoms/cm3-6×1017atoms/cm3。
Step S208：Growing P-type AlGaN layer.
Step S209：Grow the p-type GaN layer of Mg doping.
Step S210：20-30min is incubated under conditions of being 650-680 DEG C in temperature, heating system is then switched off, closes Give gas system, furnace cooling.
The present embodiment after multiple quantum well layer is grown by first growing one layer of InGaN for adulterating Zn:Zn structure sheafs, stop electricity Son migrates to p-type GaN, avoids a large amount of electronics from being leaked out from multiple quantum well layer to P-type layer, so as to improve the electronics of multiple quantum well layer Concentration；Then by growing the AlGaN of highly doped Mg concentration:The thin barrier layer of Mg, to provide high hole concentration, and effectively promote empty Multiple quantum well layer is injected in cave, increases the electron hole pair quantity of multiple quantum well layer.In addition, using AlGaN and InGaN lattice not Matching, in InGaN:Zn structure sheafs and AlGaN:The interface of the thin barrier layer of Mg produces two-dimensional hole gas, by two-dimensional hole gas, carries High hole efficiency extending transversely, the hole Injection Level of multiple quantum well layer is further improved, reduce LED operating voltage, improved LED luminous efficiency.
Embodiment 2
A kind of LED epitaxial growth methods are present embodiments provided, Fig. 3 gives the LED epitaxial growth sides in the present embodiment The structural representation of LED extensions prepared by method, refers to Fig. 3, the LED extensions, including：Sapphire Substrate 301 is grown in successively On low temperature GaN buffer 302, undoped GaN layer 303, N-type GaN layer 304, multiple quantum well layer 305, InGaN:Zn structure sheafs 306、AlGaN:The thin barrier layer 307 of Mg, p-type AlGaN layer 308 and p-type GaN layer 309.Wherein, N-type GaN layer 104 includes the first N-type The N-type GaN layer 1042 of GaN layer 1041 and second；Multiple quantum well layer 305 includes the In of alternating growthxGa(1-x)N well layer 3051 and GaN Barrier layer 3052, alternate cycle control is at 7-15.
The LED epitaxial growth methods that the present embodiment provides, using MOCVD next life long high brightness GaN-based LED, are adopted With high-purity H2Or high-purity N2Or high-purity H2And high-purity N2Mixed gas as carrier gas, high-purity N H3As N sources, metal organic source three Methyl gallium (TMGa) is used as gallium source, and trimethyl indium (TMIn) is used as indium source, and metal organic source zinc methide (DMZn) is used as zinc source, N type dopant is silane (SiH4), trimethyl aluminium (TMAl) is used as silicon source, and P-type dopant is two luxuriant magnesium (CP2Mg), reaction pressure Between 70mbar to 900mbar.Fig. 4 gives the flow chart of the LED epitaxial growth methods in the present embodiment, refers to Fig. 4, This method, including：
Step S401：It it is 1000-1100 DEG C in temperature, reaction cavity pressure is 100-300mbar, is passed through 100-130L/min H2Under conditions of, handle Sapphire Substrate 5-10 minutes.
Step S402：Growing low temperature GaN cushions, and form irregular island in the low temperature GaN buffer.
Specifically, the step S402, further for：
It it is 500-600 DEG C in temperature, reaction cavity pressure is 300-600mbar, is passed through 10000-20000sccm NH3、 50-100sccm TMGa, 100-130L/min H2Under conditions of, in low temperature buffer described in the Grown on Sapphire Substrates Layer GaN, the thickness of the low temperature GaN buffer is 20-40nm；
Temperature be 1000-1100 DEG C, reaction cavity pressure be 300-600mbar, be passed through 30000-40000sccm NH3、 100L/min-130L/min H2Under conditions of, the irregular island is formed on the low temperature buffer layer GaN.
Step S403：Grow undoped GaN layer.
Specifically, the step S403, further for：
It it is 1000-1200 DEG C in temperature, reaction cavity pressure is 300-600mbar, is passed through 30000-40000sccm NH3、 200-400sccm TMGa, 100-130L/min H2Under conditions of, the undoped GaN layer of growth；It is described undoped The thickness of GaN layer is 2-4 μm.
Step S404：Grow the N-type GaN layer of Si doping.
The N-type GaN layer, including：First N-type GaN layer and the second N-type GaN layer, wherein,
The N-type GaN layer of growth regulation one, further for：
It it is 1000-1200 DEG C in temperature, reaction cavity pressure is 300-600mbar, is passed through 30000-60000sccm NH3、 200-400sccm TMGa, 100-130L/min H2, 20-50sccm SiH4Under conditions of, described the of growth Si doping One N-type GaN, the first N-type GaN thickness is 3-4 μm, and the concentration of Si doping is 5 × 1018atoms/cm3-1× 1019atoms/cm3；
The N-type GaN layer of growth regulation two, further for：
It it is 1000-1200 DEG C in temperature, reaction cavity pressure is 300-600mbar, is passed through 30000-60000sccm NH3、 200-400sccm TMGa, 100-130L/min H2, 2-10sccm SiH4Under conditions of, described the second of growth Si doping N-type GaN, the second N-type GaN thickness are 200-400nm, and the concentration of Si doping is 5 × 1017atoms/cm3-1× 1018atoms/cm3。
Step S405：Grow Multiple-quantum hydrazine layer.
Specifically, the growth multiple quantum well layer, including：The In of alternating growthxGa(1-x)N well layer and GaN barrier layer, alternately Periodic Control is at 7-15.
Grow institute InxGa(1-x)N well layer, further for：
It is 700-750 DEG C in temperature, reacts cavity pressure 300-400mbar, be passed through 50000-70000sccm NH3、20- 40sccm TMGa, 1500-2000sccm TMIn, 100-130L/min N2Under conditions of, grow the InxGa(1-x)N traps Layer, wherein, the InxGa(1-x)N thickness is 2.5-3.5nm, and emission wavelength 450-455nm, x span are 0.20- 0.25。
Grow the GaN barrier layer, further for：
It is 750-850 DEG C in temperature, reacts cavity pressure 300-400mbar, be passed through 50000-70000sccm NH3、20- 100sccm TMGa, 100-130L/min N2Under conditions of, the GaN barrier layer is grown, the thickness of the GaN barrier layer is 8- 15nm。
Step S406：It it is 750-900 DEG C in temperature, reaction cavity pressure is 800-950mbar, is passed through 50000- 55000sccm NH3, 50-70sccm TMGa, 90-110L/min H2, 1200-1400sccm TMIn, 1000sccm- Under conditions of 1500sccm DMZn, growth thickness is 15-35nm InGaN:Zn structure sheafs, wherein Zn doping concentrations be 1 × 1017atoms/cm3-5×1017atoms/cm3。
Step S407：It it is 750-900 DEG C in temperature, reaction cavity pressure is 800-950mbar, is passed through 50000- 55000sccm NH3, 50-70sccm TMGa, 90-110L/min H2, 1200-1400sccm TMAl, 800sccm- 1050sccm CP2Under conditions of Mg, growth thickness is 15-35nm AlGaN:The thin barrier layer of Mg, wherein Mg doping concentrations be 3 × 1017atoms/cm3-6×1017atoms/cm3。
Step S408：Growing P-type AlGaN layer.
Specifically, the step S407, further for：
It it is 900-950 DEG C in temperature, reaction cavity pressure is 200-400mbar, is passed through 50000-70000sccm NH3、 30-60sccm TMGa, 100-130L/min H2, 100-130sccm TMAl, 1000-1300sccm Cp2Mg condition Under, the p-type AlGaN layer is grown, the thickness of the p-type AlGaN layer is 50-100nm.
Wherein, the concentration of Al doping is 1 × 1020atoms/cm3-3×1020atoms/cm3, the concentration of Mg doping for 1 × 1019atoms/cm3-1×1020atoms/cm3。
Step S409：Grow the p-type GaN layer of Mg doping.
Specifically, the step S408, further for：
It it is 950-1000 DEG C in temperature, reaction cavity pressure is 400-900mbar, is passed through 50000-70000sccm NH3、 20-100sccm TMGa, 100-130L/min H2, 1000-3000sccm Cp2Under conditions of Mg, growth thickness 50- 200nm Mg doped p-type GaN layers, Mg doping concentrations 1 × 1019atoms/cm3-1×1020atoms/cm3。
Step S410：20-30min is incubated under conditions of being 650-680 DEG C in temperature, heating system is then switched off, closes Give gas system, furnace cooling.
The present embodiment after multiple quantum well layer is grown by first growing one layer of InGaN for adulterating Zn:Zn structure sheafs, stop electricity Son migrates to p-type GaN, avoids a large amount of electronics from being leaked out from multiple quantum well layer to P-type layer, so as to improve the electronics of multiple quantum well layer Concentration；Then by growing the AlGaN of highly doped Mg concentration:The thin barrier layer of Mg, to provide high hole concentration, and effectively promote empty Multiple quantum well layer is injected in cave, increases the electron hole pair quantity of multiple quantum well layer.In addition, using AlGaN and InGaN lattice not Matching, in InGaN:Zn structure sheafs and AlGaN:The interface of the thin barrier layer of Mg produces two-dimensional hole gas, by two-dimensional hole gas, carries High hole efficiency extending transversely, the hole Injection Level of multiple quantum well layer is further improved, reduce LED operating voltage, improved LED luminous efficiency.
Comparative example
A kind of traditional LED epitaxial growth methods are present embodiments provided, Fig. 5 gives the LED extensions in the present embodiment The structural representation of LED extensions prepared by growing method, refers to Fig. 5, the LED extensions, including：Sapphire lining is grown in successively Low temperature GaN buffer 502, undoped GaN layer 503 on bottom 501, N-type GaN layer 504, multiple quantum well layer 505, p-type AlGaN layer 506 and p-type GaN layer 507, wherein, N-type GaN layer 504 includes the first N-type GaN layer 5041 and the second N-type GaN layer 5042, volume Sub- well layer 505 includes the In of alternating growthxGa(1-x)N well layer 5051 and GaN barrier layer 5052, alternate cycle control is at 7-15.
A kind of traditional LED epitaxial growth methods that the present embodiment provides, Fig. 6 give in the lifting in the present embodiment and measured The flow chart of the traditional LED epitaxial growth methods of sub- efficiency, refers to Fig. 6, and the LED extensions described in this method are using metallization Vapour deposition process MOCVD is learned substrate is carried out to handle acquisition, including：
Step S601：It it is 1000-1100 DEG C in temperature, reaction cavity pressure is 100-300mbar, is passed through 100-130L/min H2Under conditions of, handle Sapphire Substrate 5-10 minutes.
Step S602：Growing low temperature GaN cushions, and form irregular island in the low temperature GaN buffer.
Specifically, the step S602, further for：
It it is 500-600 DEG C in temperature, reaction cavity pressure is 300-600mbar, is passed through 10000-20000sccm NH3、 50-100sccm TMGa, 100-130L/min H2Under conditions of, in low temperature buffer described in the Grown on Sapphire Substrates Layer GaN, the thickness of the low temperature GaN buffer is 20-40nm；
Temperature be 1000-1100 DEG C, reaction cavity pressure be 300-600mbar, be passed through 30000-40000sccm NH3、 100L/min-130L/min H2Under conditions of, the irregular island is formed on the low temperature buffer layer GaN.
Step S603：Grow undoped GaN layer.
Specifically, the step S603, further for：
It it is 1000-1200 DEG C in temperature, reaction cavity pressure is 300-600mbar, is passed through 30000-40000sccm NH3、 200-400sccm TMGa, 100-130L/min H2Under conditions of, the undoped GaN layer of growth；It is described undoped The thickness of GaN layer is 2-4 μm.
Step S604：Grow the first N-type GaN layer of Si doping.
Specifically, the step S604, further for：
It it is 1000-1200 DEG C in temperature, reaction cavity pressure is 300-600mbar, is passed through 30000-60000sccm NH3、 200-400sccm TMGa, 100-130L/min H2, 20-50sccm SiH4Under conditions of, the first N-type of growth Si doping GaN, the first N-type GaN thickness are 3-4 μm, and the concentration of Si doping is 5 × 1018atoms/cm3-1×1019atoms/ cm3。
Step S605：Grow the second N-type GaN layer of Si doping.
Specifically, the step S605, further for：
It it is 1000-1200 DEG C in temperature, reaction cavity pressure is 300-600mbar, is passed through 30000-60000sccm NH3、 200-400sccm TMGa, 100-130L/min H2, 2-10sccm SiH4Under conditions of, the second N-type of growth Si doping GaN, the second N-type GaN thickness are 200-400nm, and the concentration of Si doping is 5 × 1017atoms/cm3-1× 1018atoms/cm3。
Step S606：Grow Multiple-quantum hydrazine layer.
Specifically, the growth multiple quantum well layer, including：The In of alternating growthxGa(1-x)N well layer and GaN barrier layer, alternately Periodic Control is at 7-15.
Grow institute InxGa(1-x)N well layer, further for：
It is 700-750 DEG C in temperature, reacts cavity pressure 300-400mbar, be passed through 50000-70000sccm NH3、20- 40sccm TMGa, 1500-2000sccm TMIn, 100-130L/min N2Under conditions of, grow the InxGa(1-x)N traps Layer, wherein, the InxGa(1-x)N thickness is 2.5-3.5nm, and emission wavelength 450-455nm, x span are 0.20- 0.25。
Grow the GaN barrier layer, further for：
It is 750-850 DEG C in temperature, reacts cavity pressure 300-400mbar, be passed through 50000-70000sccm NH3、20- 100sccm TMGa, 100-130L/min N2Under conditions of, the GaN barrier layer is grown, the thickness of the GaN barrier layer is 8- 15nm。
Step S607：Growing P-type AlGaN layer.
Specifically, the step S607, further for：
It it is 900-950 DEG C in temperature, reaction cavity pressure is 200-400mbar, is passed through 50000-70000sccm NH3、 30-60sccm TMGa, 100-130L/min H2, 100-130sccm TMAl, 1000-1300sccm Cp2Mg condition Under, the p-type AlGaN layer is grown, the thickness of the p-type AlGaN layer is 50-100nm.
Wherein, the concentration of Al doping is 1 × 1020atoms/cm3-3×1020atoms/cm3, the concentration of Mg doping for 1 × 1019atoms/cm3-1×1020atoms/cm3。
Step S608：Grow the p-type GaN layer of Mg doping.
Specifically, the step S408, further for：
It it is 950-1000 DEG C in temperature, reaction cavity pressure is 400-900mbar, is passed through 50000-70000sccm NH3、 20-100sccm TMGa, 100-130L/min H2, 1000-3000sccm Cp2Under conditions of Mg, growth thickness 50- 200nm Mg doped p-type GaN layers, Mg doping concentrations 1 × 1019atoms/cm3-1×1020atoms/cm3。
Step S609：20-30min is incubated under conditions of being 650-680 DEG C in temperature, heating system is then switched off, closes Give gas system, furnace cooling.
Sample 1 is prepared according to traditional LED epitaxial growth methods, according to LED epitaxial growth method systems provided by the invention Standby sample 2.
Sample 1 and sample 2 plate ITO layer about 150nm before identical under process conditions, plate Cr/Pt/Au under the same conditions Electrode about 1500nm, under the same conditions plating SiO2About 100nm, then under the same conditions by sample grinding and cutting Into the chip particle of 635 μm * 635 μm (25mil*25mil), sample 1 and sample 2 are each selected 100 in same position afterwards Crystal grain, under identical packaging technology, is packaged into white light LEDs.Using integrating sphere under the conditions of driving current 350mA test specimens The photoelectric properties of product 1 and sample 2.
The electrical parameter comparative result of the sample 1 of table 1 and sample 2
The data that integrating sphere obtains are subjected to analysis contrast, from table 1 it follows that LED extensions provided by the invention are given birth to LED leakage currents prepared by rectangular method diminish, and luminous efficiency gets a promotion, and all other LED electrical parameters improve, experimental data card Understand that this patent scheme can lift the feasibility of LED product luminous efficiency.
Compared with prior art, LED epitaxial growth methods described herein, have reached following effect：
The present invention after multiple quantum well layer is grown by first growing one layer of InGaN for adulterating Zn:Zn structure sheafs, stop electronics Migrated to p-type GaN, avoid a large amount of electronics from being leaked out from multiple quantum well layer to P-type layer, it is dense so as to improve the electronics of multiple quantum well layer Degree；Then by growing the AlGaN of highly doped Mg concentration:The thin barrier layer of Mg, to provide high hole concentration, and effectively promote hole Multiple quantum well layer is injected, increases the electron hole pair quantity of multiple quantum well layer.In addition, using AlGaN and InGaN lattice not Match somebody with somebody, in InGaN:Zn structure sheafs and AlGaN:The interface of the thin barrier layer of Mg produces two-dimensional hole gas, by two-dimensional hole gas, improves Hole efficiency extending transversely, the hole Injection Level of multiple quantum well layer is further improved, reduce LED operating voltage, improve LED Luminous efficiency.Because the embodiment of the present application has been described in detail for method part, here to being related in embodiment Structure and the expansion description of method corresponding part are omitted, and are repeated no more.Description for particular content in structure refers to method The content of embodiment is no longer specific here to limit.
Some preferred embodiments of the application have shown and described in described above, but as previously described, it should be understood that the application Be not limited to form disclosed herein, be not to be taken as the exclusion to other embodiment, and available for various other combinations, Modification and environment, and above-mentioned teaching or the technology or knowledge of association area can be passed through in application contemplated scope described herein It is modified., then all should be in this Shen and the change and change that those skilled in the art are carried out do not depart from spirit and scope Please be in the protection domain of appended claims.

Claims (10)

1. a kind of LED epitaxial growth methods, the LED extensions are that substrate is carried out using metallochemistry vapour deposition process MOCVD What processing obtained, including：
It it is 1000-1100 DEG C in temperature, reaction cavity pressure is 100-300mbar, is passed through 100-130L/min H2Under conditions of, Handle Sapphire Substrate 5-10 minutes；
Growing low temperature GaN cushions, and form irregular island in the low temperature GaN buffer；
Grow undoped GaN layer；
Grow the N-type GaN layer of Si doping；
Grow Multiple-quantum hydrazine layer；
It it is 750-900 DEG C in temperature, reaction cavity pressure is 800-950mbar, is passed through 50000-55000sccm NH3、50- 70sccm TMGa, 90-110L/min H2, 1200-1400sccm TMIn, 1000sccm-1500sccm DMZn bar Under part, growth thickness is 15-35nm InGaN:Zn structure sheafs, wherein Zn doping concentrations are 1 × 1017atoms/cm3-5× 1017atoms/cm3；
It it is 750-900 DEG C in temperature, reaction cavity pressure is 800-950mbar, is passed through 50000-55000sccm NH3、50- 70sccm TMGa, 90-110L/min H2, 1200-1400sccm TMAl, 800sccm-1050sccm CP2Mg condition Under, growth thickness is 15-35nm AlGaN:The thin barrier layer of Mg, wherein Mg doping concentrations are 3 × 1017atoms/cm3-6× 1017atoms/cm3；
Growing P-type AlGaN layer；
Grow the p-type GaN layer of Mg doping；
20-30min is incubated under conditions of being 650-680 DEG C in temperature, heating system is then switched off, closes and give gas system, with stove Cooling.
2. LED epitaxial growth methods according to claim 1, it is characterised in that
It it is 500-600 DEG C in temperature, reaction cavity pressure is 300-600mbar, is passed through 10000-20000sccm NH3、50- 100sccm TMGa, 100-130L/min H2Under conditions of, in low temperature buffer layer described in the Grown on Sapphire Substrates GaN, the thickness of the low temperature GaN buffer is 20-40nm.
3. LED epitaxial growth methods according to claim 2, it is characterised in that
Temperature be 1000-1100 DEG C, reaction cavity pressure be 300-600mbar, be passed through 30000-40000sccm NH3、100L/ Min-130L/min H2Under conditions of, the irregular island is formed on the low temperature buffer layer GaN.
4. LED epitaxial growth methods according to claim 1, it is characterised in that
It it is 1000-1200 DEG C in temperature, reaction cavity pressure is 300-600mbar, is passed through 30000-40000sccm NH3、200- 400sccm TMGa, 100-130L/min H2Under conditions of, the undoped GaN layer of growth；The undoped GaN layer Thickness be 2-4 μm.
5. LED epitaxial growth methods according to claim 1, it is characterised in that
The N-type GaN layer, including：First N-type GaN layer and the second N-type GaN layer, wherein, it is 1000-1200 DEG C in temperature, instead It is 300-600mbar to answer cavity pressure, is passed through 30000-60000sccm NH3, 200-400sccm TMGa, 100-130L/min H2, 20-50sccm SiH4Under conditions of, the first N-type GaN that Si is adulterated is grown, the thickness of the first N-type GaN is 3-4 μm, the concentration of Si doping is 5 × 1018atoms/cm3-1×1019atoms/cm3；
It it is 1000-1200 DEG C in temperature, reaction cavity pressure is 300-600mbar, is passed through 30000-60000sccm NH3、200- 400sccm TMGa, 100-130L/min H2, 2-10sccm SiH4Under conditions of, second N-type of growth Si doping GaN, the second N-type GaN thickness are 200-400nm, and the concentration of Si doping is 5 × 1017atoms/cm3-1× 1018atoms/cm3。
6. LED epitaxial growth methods according to claim 1, it is characterised in that
The growth multiple quantum well layer, including：The In of alternating growthxGa(1-x)N well layer and GaN barrier layer, alternate cycle are controlled in 7- 15.
7. LED epitaxial growth methods according to claim 6, it is characterised in that
It is 700-750 DEG C in temperature, reacts cavity pressure 300-400mbar, be passed through 50000-70000sccm NH3、20-40sccm TMGa, 1500-2000sccm TMIn, 100-130L/min N2Under conditions of, grow the InxGa(1- x) N well layer,
Wherein, the InxGa(1-x)N thickness is 2.5-3.5nm, and emission wavelength 450-455nm, x span are 0.20- 0.25。
8. LED epitaxial growth methods according to claim 6, it is characterised in that
It is 750-850 DEG C in temperature, reacts cavity pressure 300-400mbar, be passed through 50000-70000sccm NH3、20- 100sccm TMGa, 100-130L/min N2Under conditions of, the GaN barrier layer is grown, the thickness of the GaN barrier layer is 8- 15nm。
9. LED epitaxial growth methods according to claim 1, it is characterised in that
It it is 900-950 DEG C in temperature, reaction cavity pressure is 200-400mbar, is passed through 50000-70000sccm NH3、30- 60sccm TMGa, 100-130L/min H2, 100-130sccm TMAl, 1000-1300sccm Cp2Under conditions of Mg, The p-type AlGaN layer is grown, the thickness of the p-type AlGaN layer is 50-100nm,
Wherein, the concentration of Al doping is 1 × 1020atoms/cm3-3×1020atoms/cm3, the concentration of Mg doping for 1 × 1019atoms/cm3-1×1020atoms/cm3。
10. LED epitaxial growth methods according to claim 1, it is characterised in that
It it is 950-1000 DEG C in temperature, reaction cavity pressure is 400-900mbar, is passed through 50000-70000sccm NH3、20- 100sccm TMGa, 100-130L/min H2, 1000-3000sccm Cp2Under conditions of Mg, growth thickness 50-200nm Mg doped p-type GaN layers, Mg doping concentrations 1 × 1019atoms/cm3-1×1020atoms/cm3。
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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109950375A (en) * 2019-01-31 2019-06-28 华灿光电（浙江）有限公司 LED epitaxial slice and its growing method
CN110350056A (en) * 2019-07-25 2019-10-18 湘能华磊光电股份有限公司 A kind of LED outer layer growth method
CN110379895A (en) * 2019-07-25 2019-10-25 湘能华磊光电股份有限公司 LED epitaxial growth method
CN111540814A (en) * 2020-05-09 2020-08-14 湘能华磊光电股份有限公司 LED epitaxial growth method for improving quantum efficiency
CN117253948A (en) * 2023-11-20 2023-12-19 江西兆驰半导体有限公司 Light-emitting diode epitaxial wafer, preparation method thereof and light-emitting diode

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7772023B2 (en) * 2007-11-30 2010-08-10 Sumitomo Electric Industries Ltd. Method of producing semiconductor optical device
CN102255009A (en) * 2011-06-23 2011-11-23 映瑞光电科技(上海)有限公司 Light-emitting diode (LED) chip manufacturing method
CN102544285A (en) * 2012-01-16 2012-07-04 北京大学 Nitride light-emitting device for improving light-emitting efficiency by electron barrier layer
CN104253181A (en) * 2013-06-26 2014-12-31 南通同方半导体有限公司 LED (Light Emitting Diode) epitaxy structure with multiple barrier layers
CN104465912A (en) * 2014-08-22 2015-03-25 江苏鑫博电子科技有限公司 LED epitaxial structure and method achieving high luminous energy density output

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7772023B2 (en) * 2007-11-30 2010-08-10 Sumitomo Electric Industries Ltd. Method of producing semiconductor optical device
CN102255009A (en) * 2011-06-23 2011-11-23 映瑞光电科技(上海)有限公司 Light-emitting diode (LED) chip manufacturing method
CN102544285A (en) * 2012-01-16 2012-07-04 北京大学 Nitride light-emitting device for improving light-emitting efficiency by electron barrier layer
CN104253181A (en) * 2013-06-26 2014-12-31 南通同方半导体有限公司 LED (Light Emitting Diode) epitaxy structure with multiple barrier layers
CN104465912A (en) * 2014-08-22 2015-03-25 江苏鑫博电子科技有限公司 LED epitaxial structure and method achieving high luminous energy density output

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109950375A (en) * 2019-01-31 2019-06-28 华灿光电（浙江）有限公司 LED epitaxial slice and its growing method
CN110350056A (en) * 2019-07-25 2019-10-18 湘能华磊光电股份有限公司 A kind of LED outer layer growth method
CN110379895A (en) * 2019-07-25 2019-10-25 湘能华磊光电股份有限公司 LED epitaxial growth method
CN110379895B (en) * 2019-07-25 2022-04-22 湘能华磊光电股份有限公司 LED epitaxial growth method
CN111540814A (en) * 2020-05-09 2020-08-14 湘能华磊光电股份有限公司 LED epitaxial growth method for improving quantum efficiency
CN111540814B (en) * 2020-05-09 2023-03-21 湘能华磊光电股份有限公司 LED epitaxial growth method for improving quantum efficiency
CN117253948A (en) * 2023-11-20 2023-12-19 江西兆驰半导体有限公司 Light-emitting diode epitaxial wafer, preparation method thereof and light-emitting diode
CN117253948B (en) * 2023-11-20 2024-03-08 江西兆驰半导体有限公司 Light-emitting diode epitaxial wafer, preparation method thereof and light-emitting diode

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