CN107394018B - A kind of LED epitaxial growth method - Google Patents

A kind of LED epitaxial growth method Download PDF

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CN107394018B
CN107394018B CN201710681976.3A CN201710681976A CN107394018B CN 107394018 B CN107394018 B CN 107394018B CN 201710681976 A CN201710681976 A CN 201710681976A CN 107394018 B CN107394018 B CN 107394018B
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CN107394018A (en
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徐平
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Xiangneng Hualei Optoelectrical Co Ltd
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    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
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    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
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    • H01L33/145—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
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    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
    • H01L33/325—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen characterised by the doping materials

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Abstract

The present invention provides a kind of LED epitaxial growth methods, this method after growing multiple quantum well layer by first growing one layer of InGaN:Zn structure sheaf for adulterating Zn, electronics is stopped to migrate to p-type GaN, a large amount of electronics are avoided to leak out from multiple quantum well layer to P-type layer, to improve the electron concentration of multiple quantum well layer；Then by growing the thin barrier layer of AlGaN:Mg of highly doped Mg concentration, to provide high hole concentration, and effectively hole is pushed to inject multiple quantum well layer, increases the electron hole pair quantity of multiple quantum well layer.In addition, it is mismatched using the lattice of AlGaN and InGaN, two-dimensional hole gas is generated in the interface of InGaN:Zn structure sheaf and the thin barrier layer of AlGaN:Mg, by two-dimensional hole gas, improve hole efficiency extending transversely, the hole Injection Level for further increasing multiple quantum well layer, reduces the operating voltage of LED, improves the luminous efficiency of LED.

Description

A kind of LED epitaxial growth method
Technical field
The invention belongs to LED technology fields, and in particular to a kind of LED epitaxial growth method.
Background technique
Light emitting diode (Light-Emitting Diode, LED) is a kind of semi-conductor electricity for converting electrical energy into luminous energy Sub- device.When the current flows, electronics and hole are compound in it and issue monochromatic light.LED is as a kind of efficient, environmentally friendly, green Color New Solid lighting source, has that low-voltage, low-power consumption, small in size, light-weight, the service life is long, high reliability, rich in color etc. Advantage.The problem of scale of domestic production LED gradually expands at present, but LED still has inefficiency.
Traditional LED structure epitaxial growth method, includes the following steps:
It 1, is 1000-1100 DEG C in temperature, reaction cavity pressure is 100-300mbar, is passed through the H of 100-130L/min2's Under the conditions of, it handles Sapphire Substrate 5-10 minutes；
2, growing low temperature GaN buffer layer, and irregular island is formed in the low temperature GaN buffer；
3, undoped GaN layer is grown；
4, the first N-type GaN layer of growth Si doping；
5, the second N-type GaN layer of growth Si doping；
6, multiple quantum well layer is grown；
7, growing P-type AlGaN layer；
8, the p-type GaN layer of growth Mg doping；
9,20-30min is kept the temperature under conditions of temperature is 650-680 DEG C, is then switched off heating system, closes and give gas system System, furnace cooling.
Gallium nitride is semiconductor material most widely used in LED.Gallium nitride material is pricker zinc ore structure, and material itself is from pole Change effect and lattice mismatches and generates quantum confined stark effect, as driving current increases, electronic leakage flow phenomenon becomes It is more serious, the raising of LED efficiency is seriously hindered, the energy-saving effect of LED is influenced.
Therefore it provides a kind of LED epitaxial growth method, mitigates the influence of quantum confined stark effect, leakage current is reduced, And then the luminous efficiency of LED is improved, it is the art technical problem urgently to be resolved.
Summary of the invention
In order to solve the technical issues of quantum confined stark effect influences LED luminous efficiency in background technique, the present invention A kind of LED epitaxial growth method is disclosed, structure is built by forming asymmetric trap, is able to suppress electronics and leaks out multiple quantum wells Layer, and then inhibit the generation of electron leak electric current, and hole can effectively be pushed to inject multiple quantum well layer, increase the electricity of multiple quantum well layer Sub- hole enhances luminous radiation efficiency, to promote the brightness of LED to quantity.
To solve the problems in above-mentioned background technique, a kind of LED epitaxial growth method of the present invention, the LED extension is to adopt Processing acquisition is carried out to substrate with metallochemistry vapour deposition process MOCVD, is included the following steps:
It is 1000-1100 DEG C in temperature, reaction cavity pressure is 100-300mbar, is passed through the H of 100-130L/min2Item Under part, handle Sapphire Substrate 5-10 minutes；
Growing low temperature GaN buffer layer, and irregular island is formed in the low temperature GaN buffer；
Grow undoped GaN layer；
Grow the N-type GaN layer of Si doping；
Grow multiple quantum well layer；
It is 750-900 DEG C in temperature, reaction cavity pressure is 800-950mbar, is passed through the NH of 50000-55000sccm3、 The H of TMGa, 90-110L/min of 50-70sccm2, 1200-1400sccm TMIn, 1000sccm-1500sccm DMZn Under the conditions of, growth thickness is the InGaN:Zn structure sheaf of 15-35nm, and wherein Zn doping concentration is 1 × 1017atoms/cm3-5× 1017atoms/cm3；
It is 750-900 DEG C in temperature, reaction cavity pressure is 800-950mbar, is passed through the NH of 50000-55000sccm3、 The H of TMGa, 90-110L/min of 50-70sccm2, 1200-1400sccm TMAl, 800sccm-1050sccm CP2Mg's Under the conditions of, growth thickness is the thin barrier layer of AlGaN:Mg of 15-35nm, and wherein Mg doping concentration is 3 × 1017atoms/cm3-6× 1017atoms/cm3；
Growing P-type AlGaN layer；
Grow the p-type GaN layer of Mg doping；
20-30min is kept the temperature under conditions of temperature is 650-680 DEG C, heating system is then switched off, closes and give gas system, Furnace cooling.
It further, is 500-600 DEG C in temperature, reaction cavity pressure is 300-600mbar, is passed through 10000- The NH of 20000sccm3, 50-100sccm TMGa, 100-130L/min H2Under conditions of, it is raw in the Sapphire Substrate The long low temperature buffer layer GaN, the low temperature GaN buffer with a thickness of 20-40nm.
Further, temperature is 1000-1100 DEG C, reaction cavity pressure is 300-600mbar, it is passed through 30000- The NH of 40000sccm3, 100L/min-130L/min H2Under conditions of, formation is described on the low temperature buffer layer GaN does not advise Then island.
It further, is 1000-1200 DEG C in temperature, reaction cavity pressure is 300-600mbar, is passed through 30000- The NH of 40000sccm3, 200-400sccm TMGa, 100-130L/min H2Under conditions of, the undoped GaN of growth Layer；The undoped GaN layer with a thickness of 2-4 μm.
Further, the N-type GaN layer, comprising: the first N-type GaN layer and the second N-type GaN layer, wherein
It is 1000-1200 DEG C in temperature, reaction cavity pressure is 300-600mbar, is passed through the NH of 30000-60000sccm3、 The H of TMGa, 100-130L/min of 200-400sccm2, 20-50sccm SiH4Under conditions of, described the of growth Si doping One N-type GaN, the first N-type GaN with a thickness of 3-4 μm, the concentration of Si doping is 5 × 1018atoms/cm3-1× 1019atoms/cm3；
It is 1000-1200 DEG C in temperature, reaction cavity pressure is 300-600mbar, is passed through the NH of 30000-60000sccm3、 The H of TMGa, 100-130L/min of 200-400sccm2, 2-10sccm SiH4Under conditions of, described the second of growth Si doping N-type GaN, the second N-type GaN with a thickness of 200-400nm, the concentration of Si doping is 5 × 1017atoms/cm3-1× 1018atoms/cm3。
Further, the growth multiple quantum well layer, comprising: the In of alternating growthxGa(1-x)N well layer and GaN barrier layer are handed over For period control at 7-15.
Further, it is 700-750 DEG C in temperature, reacts cavity pressure 300-400mbar, be passed through 50000-70000sccm NH3, 20-40sccm TMGa, 1500-2000sccm TMIn, 100-130L/min N2Under conditions of, described in growth InxGa(1-x)N well layer,
Wherein, the InxGa(1-x)N is with a thickness of 2.5-3.5nm, the value range of emission wavelength 450-455nm, x 0.20-0.25。
Further, it is 750-850 DEG C in temperature, reacts cavity pressure 300-400mbar, be passed through 50000-70000sccm NH3, 20-100sccm TMGa, 100-130L/min N2Under conditions of, the GaN barrier layer is grown, the GaN barrier layer With a thickness of 8-15nm.
It further, is 900-950 DEG C in temperature, reaction cavity pressure is 200-400mbar, is passed through 50000- The NH of 70000sccm3, 30-60sccm TMGa, 100-130L/min H2, 100-130sccm TMAl, 1000- The Cp of 1300sccm2Under conditions of Mg, grow the p-type AlGaN layer, the p-type AlGaN layer with a thickness of 50-100nm,
Wherein, the concentration of Al doping is 1 × 1020atoms/cm3-3×1020atoms/cm3, Mg doping concentration be 1 × 1019atoms/cm3-1×1020atoms/cm3。
It further, is 950-1000 DEG C in temperature, reaction cavity pressure is 400-900mbar, is passed through 50000- The NH of 70000sccm3, 20-100sccm TMGa, 100-130L/min H2, 1000-3000sccm Cp2Under conditions of Mg, Growth thickness is the Mg doped p-type GaN layer of 50-200nm, Mg doping concentration 1 × 1019atoms/cm3-1×1020atoms/cm3。
Compared with prior art, LED epitaxial growth method described herein achieving the following effects:
The present invention stops electronics by first growing one layer of InGaN:Zn structure sheaf for adulterating Zn after growing multiple quantum well layer It is migrated to p-type GaN, avoids a large amount of electronics from leaking out from multiple quantum well layer to P-type layer, so that the electronics for improving multiple quantum well layer is dense Degree；Then by growing the thin barrier layer of AlGaN:Mg of highly doped Mg concentration, to provide high hole concentration, and hole is effectively pushed Multiple quantum well layer is injected, the electron hole pair quantity of multiple quantum well layer is increased.In addition, using AlGaN and InGaN lattice not Match, generates two-dimensional hole gas in the interface of InGaN:Zn structure sheaf and the thin barrier layer of AlGaN:Mg, by two-dimensional hole gas, improve Hole efficiency extending transversely further increases the hole Injection Level of multiple quantum well layer, reduces the operating voltage of LED, improves LED Luminous efficiency.
Detailed description of the invention
The drawings described herein are used to provide a further understanding of the present invention, constitutes a part of the invention, this hair Bright illustrative embodiments and their description are used to explain the present invention, and are not constituted improper limitations of the present invention.In the accompanying drawings:
Fig. 1 is the structural schematic diagram using the LED extension of the LED epitaxial growth method preparation in embodiment 1；
Fig. 2 is the flow chart of the LED epitaxial growth method in embodiment 1；
Fig. 3 is the structural schematic diagram of the LED extension in embodiment 2；
Fig. 4 is the flow chart of the growing method of the LED extension in embodiment 2；
Fig. 5 is the LED epitaxial structure schematic diagram of the prior art；
Fig. 6 is the LED epitaxial growth method of the prior art.
Specific embodiment
As used some vocabulary to censure specific components in the specification and claims.Those skilled in the art answer It is understood that hardware manufacturer may call the same component with different nouns.This specification and claims are not with name The difference of title is as the mode for distinguishing component, but with the difference of component functionally as the criterion of differentiation.Such as logical The "comprising" of piece specification and claim mentioned in is an open language, therefore should be construed to " include but do not limit In "." substantially " refer within the acceptable error range, those skilled in the art can within a certain error range solve described in Technical problem basically reaches the technical effect.In addition, " coupling " word includes any direct and indirect electric property coupling herein Means.Therefore, if it is described herein that a first device is coupled to a second device, then representing the first device can directly electrical coupling It is connected to the second device, or the second device indirectly electrically coupled through other devices or coupling means.Specification Subsequent descriptions be implement the application better embodiment, so it is described description be for the purpose of the rule for illustrating the application, It is not intended to limit the scope of the present application.The protection scope of the application is as defined by the appended claims.
In addition, there is no the structures that component disclosed in claims and method and step are defined in embodiment for this specification Part and method and step.In particular, the size for the structure member recorded in embodiments, material, shape, its structural order and neighbour It connects sequence and manufacturing method etc. to limit as long as no specific, is just only used as and illustrates example, rather than the scope of the present invention is limited Due to this.The size and location relationship of structure member shown in the drawings is amplified and is shown to clearly be illustrated.
The application is described in further detail below in conjunction with attached drawing, but not as the restriction to the application.
Embodiment 1
A kind of LED epitaxial growth method is present embodiments provided, Fig. 1 gives the epitaxial growth side LED in the present embodiment The structural schematic diagram of the LED extension of method preparation, referring to Figure 1, the LED extension, comprising: be successively grown in Sapphire Substrate 101 On low temperature GaN buffer 102, undoped GaN layer 103, N-type GaN layer 104, multiple quantum well layer 105, InGaN:Zn structure sheaf 106, the thin barrier layer 107 of AlGaN:Mg, p-type AlGaN layer 108 and p-type GaN layer 109.Wherein, N-type GaN layer 104 includes the first N-type GaN layer 1041 and the second N-type GaN layer 1042；Multiple quantum well layer 105 includes the In of alternating growthxGa(1-x)N well layer 1051 and GaN Barrier layer 1052, alternate cycle control is at 7-15.
LED epitaxial growth method provided in this embodiment, high brightness GaN-based LED epitaxial wafer is grown using MOCVD, is adopted With high-purity H2Or high-purity N2Or high-purity H2And high-purity N2Mixed gas as carrier gas, high-purity N H3As the source N, metal organic source three Methyl gallium (TMGa) is used as gallium source, and trimethyl indium (TMIn) is used as indium source, and metal organic source zinc methide (DMZn) is used as zinc source, N type dopant is silane (SiH4), trimethyl aluminium (TMAl) is used as silicon source, and P-type dopant is two luxuriant magnesium (CP2Mg), reaction pressure Between 70mbar to 900mbar.Fig. 2 gives the flow chart of the LED epitaxial growth method in the present embodiment, refers to Fig. 2, This method, comprising:
Step S201: being 1000-1100 DEG C in temperature, reaction cavity pressure is 100-300mbar, is passed through 100-130L/min H2Under conditions of, it handles Sapphire Substrate 5-10 minutes.
Step S202: growing low temperature GaN buffer layer, and irregular island is formed in the low temperature GaN buffer.
Step S203: undoped GaN layer is grown.
Step S204: the N-type GaN layer of growth Si doping；The N-type GaN layer, comprising: the first N-type GaN layer and the second N-type GaN layer.
Step S205: growth multiple quantum well layer.
Step S206: being 750-900 DEG C in temperature, reaction cavity pressure is 800-950mbar, is passed through 50000- The NH of 55000sccm3, 50-70sccm TMGa, 90-110L/min H2, 1200-1400sccm TMIn, 1000sccm- Under conditions of the DMZn of 1500sccm, growth thickness be 15-35nm InGaN:Zn structure sheaf, wherein Zn doping concentration be 1 × 1017atoms/cm3-5×1017atoms/cm3。
Step S207: being 750-900 DEG C in temperature, reaction cavity pressure is 800-950mbar, is passed through 50000- The NH of 55000sccm3, 50-70sccm TMGa, 90-110L/min H2, 1200-1400sccm TMAl, 800sccm- The CP of 1050sccm2Under conditions of Mg, growth thickness be 15-35nm the thin barrier layer of AlGaN:Mg, wherein Mg doping concentration be 3 × 1017atoms/cm3-6×1017atoms/cm3。
Step S208: growing P-type AlGaN layer.
Step S209: the p-type GaN layer of growth Mg doping.
Step S210: keeping the temperature 20-30min under conditions of temperature is 650-680 DEG C, is then switched off heating system, closes Give gas system, furnace cooling.
The present embodiment stops electricity by first growing one layer of InGaN:Zn structure sheaf for adulterating Zn after growing multiple quantum well layer Son is migrated to p-type GaN, avoids a large amount of electronics from leaking out from multiple quantum well layer to P-type layer, to improve the electronics of multiple quantum well layer Concentration；Then it by growing the thin barrier layer of AlGaN:Mg of highly doped Mg concentration, to provide high hole concentration, and effectively pushes empty Multiple quantum well layer is injected in cave, increases the electron hole pair quantity of multiple quantum well layer.In addition, using AlGaN and InGaN lattice not Matching generates two-dimensional hole gas in the interface of InGaN:Zn structure sheaf and the thin barrier layer of AlGaN:Mg and mentions by two-dimensional hole gas High hole efficiency extending transversely further increases the hole Injection Level of multiple quantum well layer, reduces the operating voltage of LED, improves The luminous efficiency of LED.
Embodiment 2
A kind of LED epitaxial growth method is present embodiments provided, Fig. 3 gives the epitaxial growth side LED in the present embodiment The structural schematic diagram of the LED extension of method preparation, refers to Fig. 3, the LED extension, comprising: be successively grown in Sapphire Substrate 301 On low temperature GaN buffer 302, undoped GaN layer 303, N-type GaN layer 304, multiple quantum well layer 305, InGaN:Zn structure sheaf 306, the thin barrier layer 307 of AlGaN:Mg, p-type AlGaN layer 308 and p-type GaN layer 309.Wherein, N-type GaN layer 104 includes the first N-type GaN layer 1041 and the second N-type GaN layer 1042；Multiple quantum well layer 305 includes the In of alternating growthxGa(1-x)N well layer 3051 and GaN Barrier layer 3052, alternate cycle control is at 7-15.
LED epitaxial growth method provided in this embodiment, high brightness GaN-based LED epitaxial wafer is grown using MOCVD, is adopted With high-purity H2Or high-purity N2Or high-purity H2And high-purity N2Mixed gas as carrier gas, high-purity N H3As the source N, metal organic source three Methyl gallium (TMGa) is used as gallium source, and trimethyl indium (TMIn) is used as indium source, and metal organic source zinc methide (DMZn) is used as zinc source, N type dopant is silane (SiH4), trimethyl aluminium (TMAl) is used as silicon source, and P-type dopant is two luxuriant magnesium (CP2Mg), reaction pressure Between 70mbar to 900mbar.Fig. 4 gives the flow chart of the LED epitaxial growth method in the present embodiment, refers to Fig. 4, This method, comprising:
Step S401: being 1000-1100 DEG C in temperature, reaction cavity pressure is 100-300mbar, is passed through 100-130L/min H2Under conditions of, it handles Sapphire Substrate 5-10 minutes.
Step S402: growing low temperature GaN buffer layer, and irregular island is formed in the low temperature GaN buffer.
Specifically, the step S402, further are as follows:
It is 500-600 DEG C in temperature, reaction cavity pressure is 300-600mbar, is passed through the NH of 10000-20000sccm3、 The H of TMGa, 100-130L/min of 50-100sccm2Under conditions of, the low temperature buffer described in the Grown on Sapphire Substrates Layer GaN, the low temperature GaN buffer with a thickness of 20-40nm；
Temperature is 1000-1100 DEG C, reaction cavity pressure is 300-600mbar, it is passed through the NH of 30000-40000sccm3、 The H of 100L/min-130L/min2Under conditions of, the irregular island is formed on the low temperature buffer layer GaN.
Step S403: undoped GaN layer is grown.
Specifically, the step S403, further are as follows:
It is 1000-1200 DEG C in temperature, reaction cavity pressure is 300-600mbar, is passed through the NH of 30000-40000sccm3、 The H of TMGa, 100-130L/min of 200-400sccm2Under conditions of, the undoped GaN layer of growth；It is described undoped GaN layer with a thickness of 2-4 μm.
Step S404: the N-type GaN layer of growth Si doping.
The N-type GaN layer, comprising: the first N-type GaN layer and the second N-type GaN layer, wherein
One N-type GaN layer of growth regulation, further are as follows:
It is 1000-1200 DEG C in temperature, reaction cavity pressure is 300-600mbar, is passed through the NH of 30000-60000sccm3、 The H of TMGa, 100-130L/min of 200-400sccm2, 20-50sccm SiH4Under conditions of, described the of growth Si doping One N-type GaN, the first N-type GaN with a thickness of 3-4 μm, the concentration of Si doping is 5 × 1018atoms/cm3-1× 1019atoms/cm3；
Two N-type GaN layer of growth regulation, further are as follows:
It is 1000-1200 DEG C in temperature, reaction cavity pressure is 300-600mbar, is passed through the NH of 30000-60000sccm3、 The H of TMGa, 100-130L/min of 200-400sccm2, 2-10sccm SiH4Under conditions of, described the second of growth Si doping N-type GaN, the second N-type GaN with a thickness of 200-400nm, the concentration of Si doping is 5 × 1017atoms/cm3-1× 1018atoms/cm3。
Step S405: growth multiple quantum well layer.
Specifically, the growth multiple quantum well layer, comprising: the In of alternating growthxGa(1-x)N well layer and GaN barrier layer, alternately Period, control was at 7-15.
Grow institute InxGa(1-x)N well layer, further are as follows:
It is 700-750 DEG C in temperature, reacts cavity pressure 300-400mbar, be passed through the NH of 50000-70000sccm3、20- The N of TMIn, 100-130L/min of TMGa, 1500-2000sccm of 40sccm2Under conditions of, grow the InxGa(1-x)N trap Layer, wherein the InxGa(1-x)N is 0.20- with a thickness of 2.5-3.5nm, the value range of emission wavelength 450-455nm, x 0.25。
The GaN barrier layer is grown, further are as follows:
It is 750-850 DEG C in temperature, reacts cavity pressure 300-400mbar, be passed through the NH of 50000-70000sccm3、20- The N of TMGa, 100-130L/min of 100sccm2Under conditions of, grow the GaN barrier layer, the GaN barrier layer with a thickness of 8- 15nm。
Step S406: being 750-900 DEG C in temperature, reaction cavity pressure is 800-950mbar, is passed through 50000- The NH of 55000sccm3, 50-70sccm TMGa, 90-110L/min H2, 1200-1400sccm TMIn, 1000sccm- Under conditions of the DMZn of 1500sccm, growth thickness be 15-35nm InGaN:Zn structure sheaf, wherein Zn doping concentration be 1 × 1017atoms/cm3-5×1017atoms/cm3。
Step S407: being 750-900 DEG C in temperature, reaction cavity pressure is 800-950mbar, is passed through 50000- The NH of 55000sccm3, 50-70sccm TMGa, 90-110L/min H2, 1200-1400sccm TMAl, 800sccm- The CP of 1050sccm2Under conditions of Mg, growth thickness be 15-35nm the thin barrier layer of AlGaN:Mg, wherein Mg doping concentration be 3 × 1017atoms/cm3-6×1017atoms/cm3。
Step S408: growing P-type AlGaN layer.
Specifically, the step S407, further are as follows:
It is 900-950 DEG C in temperature, reaction cavity pressure is 200-400mbar, is passed through the NH of 50000-70000sccm3、 The H of TMGa, 100-130L/min of 30-60sccm2, 100-130sccm TMAl, 1000-1300sccm Cp2The condition of Mg Under, grow the p-type AlGaN layer, the p-type AlGaN layer with a thickness of 50-100nm.
Wherein, the concentration of Al doping is 1 × 1020atoms/cm3-3×1020atoms/cm3, Mg doping concentration be 1 × 1019atoms/cm3-1×1020atoms/cm3。
Step S409: the p-type GaN layer of growth Mg doping.
Specifically, the step S408, further are as follows:
It is 950-1000 DEG C in temperature, reaction cavity pressure is 400-900mbar, is passed through the NH of 50000-70000sccm3、 The H of TMGa, 100-130L/min of 20-100sccm2, 1000-3000sccm Cp2Under conditions of Mg, growth thickness 50- The Mg doped p-type GaN layer of 200nm, Mg doping concentration 1 × 1019atoms/cm3-1×1020atoms/cm3。
Step S410: keeping the temperature 20-30min under conditions of temperature is 650-680 DEG C, is then switched off heating system, closes Give gas system, furnace cooling.
The present embodiment stops electricity by first growing one layer of InGaN:Zn structure sheaf for adulterating Zn after growing multiple quantum well layer Son is migrated to p-type GaN, avoids a large amount of electronics from leaking out from multiple quantum well layer to P-type layer, to improve the electronics of multiple quantum well layer Concentration；Then it by growing the thin barrier layer of AlGaN:Mg of highly doped Mg concentration, to provide high hole concentration, and effectively pushes empty Multiple quantum well layer is injected in cave, increases the electron hole pair quantity of multiple quantum well layer.In addition, using AlGaN and InGaN lattice not Matching generates two-dimensional hole gas in the interface of InGaN:Zn structure sheaf and the thin barrier layer of AlGaN:Mg and mentions by two-dimensional hole gas High hole efficiency extending transversely further increases the hole Injection Level of multiple quantum well layer, reduces the operating voltage of LED, improves The luminous efficiency of LED.
Comparative example
A kind of traditional LED epitaxial growth method is present embodiments provided, Fig. 5 gives the LED extension in the present embodiment The structural schematic diagram of the LED extension of growing method preparation, refers to Fig. 5, the LED extension, comprising: is successively grown in sapphire lining Low temperature GaN buffer 502, undoped GaN layer 503 on bottom 501, N-type GaN layer 504, multiple quantum well layer 505, p-type AlGaN layer 506 and p-type GaN layer 507, wherein N-type GaN layer 504 includes the first N-type GaN layer 5041 and the second N-type GaN layer 5042, volume Sub- well layer 505 includes the In of alternating growthxGa(1-x)N well layer 5051 and GaN barrier layer 5052, alternate cycle control is at 7-15.
A kind of traditional LED epitaxial growth method provided in this embodiment, Fig. 6 give amount in the promotion in the present embodiment The flow chart of the traditional LED epitaxial growth method of sub- efficiency, refers to Fig. 6, and LED extension described in this method is using metallization It learns vapour deposition process MOCVD and processing acquisition is carried out to substrate, comprising:
Step S601: being 1000-1100 DEG C in temperature, reaction cavity pressure is 100-300mbar, is passed through 100-130L/min H2Under conditions of, it handles Sapphire Substrate 5-10 minutes.
Step S602: growing low temperature GaN buffer layer, and irregular island is formed in the low temperature GaN buffer.
Specifically, the step S602, further are as follows:
It is 500-600 DEG C in temperature, reaction cavity pressure is 300-600mbar, is passed through the NH of 10000-20000sccm3、 The H of TMGa, 100-130L/min of 50-100sccm2Under conditions of, the low temperature buffer described in the Grown on Sapphire Substrates Layer GaN, the low temperature GaN buffer with a thickness of 20-40nm；
Temperature is 1000-1100 DEG C, reaction cavity pressure is 300-600mbar, it is passed through the NH of 30000-40000sccm3、 The H of 100L/min-130L/min2Under conditions of, the irregular island is formed on the low temperature buffer layer GaN.
Step S603: undoped GaN layer is grown.
Specifically, the step S603, further are as follows:
It is 1000-1200 DEG C in temperature, reaction cavity pressure is 300-600mbar, is passed through the NH of 30000-40000sccm3、 The H of TMGa, 100-130L/min of 200-400sccm2Under conditions of, the undoped GaN layer of growth；It is described undoped GaN layer with a thickness of 2-4 μm.
Step S604: the first N-type GaN layer of growth Si doping.
Specifically, the step S604, further are as follows:
It is 1000-1200 DEG C in temperature, reaction cavity pressure is 300-600mbar, is passed through the NH of 30000-60000sccm3、 The H of TMGa, 100-130L/min of 200-400sccm2, 20-50sccm SiH4Under conditions of, the first N-type of growth Si doping GaN, the first N-type GaN with a thickness of 3-4 μm, the concentration of Si doping is 5 × 1018atoms/cm3-1×1019atoms/ cm3。
Step S605: the second N-type GaN layer of growth Si doping.
Specifically, the step S605, further are as follows:
It is 1000-1200 DEG C in temperature, reaction cavity pressure is 300-600mbar, is passed through the NH of 30000-60000sccm3、 The H of TMGa, 100-130L/min of 200-400sccm2, 2-10sccm SiH4Under conditions of, the second N-type of growth Si doping GaN, the second N-type GaN with a thickness of 200-400nm, the concentration of Si doping is 5 × 1017atoms/cm3-1× 1018atoms/cm3。
Step S606: growth multiple quantum well layer.
Specifically, the growth multiple quantum well layer, comprising: the In of alternating growthxGa(1-x)N well layer and GaN barrier layer, alternately Period, control was at 7-15.
Grow institute InxGa(1-x)N well layer, further are as follows:
It is 700-750 DEG C in temperature, reacts cavity pressure 300-400mbar, be passed through the NH of 50000-70000sccm3、20- The N of TMIn, 100-130L/min of TMGa, 1500-2000sccm of 40sccm2Under conditions of, grow the InxGa(1-x)N trap Layer, wherein the InxGa(1-x)N is 0.20- with a thickness of 2.5-3.5nm, the value range of emission wavelength 450-455nm, x 0.25。
The GaN barrier layer is grown, further are as follows:
It is 750-850 DEG C in temperature, reacts cavity pressure 300-400mbar, be passed through the NH of 50000-70000sccm3、20- The N of TMGa, 100-130L/min of 100sccm2Under conditions of, grow the GaN barrier layer, the GaN barrier layer with a thickness of 8- 15nm。
Step S607: growing P-type AlGaN layer.
Specifically, the step S607, further are as follows:
It is 900-950 DEG C in temperature, reaction cavity pressure is 200-400mbar, is passed through the NH of 50000-70000sccm3、 The H of TMGa, 100-130L/min of 30-60sccm2, 100-130sccm TMAl, 1000-1300sccm Cp2The condition of Mg Under, grow the p-type AlGaN layer, the p-type AlGaN layer with a thickness of 50-100nm.
Wherein, the concentration of Al doping is 1 × 1020atoms/cm3-3×1020atoms/cm3, Mg doping concentration be 1 × 1019atoms/cm3-1×1020atoms/cm3。
Step S608: the p-type GaN layer of growth Mg doping.
Specifically, the step S408, further are as follows:
It is 950-1000 DEG C in temperature, reaction cavity pressure is 400-900mbar, is passed through the NH of 50000-70000sccm3、 The H of TMGa, 100-130L/min of 20-100sccm2, 1000-3000sccm Cp2Under conditions of Mg, growth thickness 50- The Mg doped p-type GaN layer of 200nm, Mg doping concentration 1 × 1019atoms/cm3-1×1020atoms/cm3。
Step S609: keeping the temperature 20-30min under conditions of temperature is 650-680 DEG C, is then switched off heating system, closes Give gas system, furnace cooling.
Sample 1 is prepared according to traditional LED epitaxial growth method, the LED epitaxial growth method system provided according to the present invention Standby sample 2.
Sample 1 and sample 2 plate ITO layer about 150nm under identical preceding process conditions, plate Cr/Pt/Au under the same conditions Electrode about 1500nm, under the same conditions plating SiO2About 100nm, then under the same conditions by sample grinding and cutting At 635 μm * 635 μm (25mil*25mil) of chip particle, sample 1 and sample 2 are respectively selected 100 in same position later Crystal grain is packaged into white light LEDs under identical packaging technology.Using integrating sphere under the conditions of driving current 350mA test specimens The photoelectric properties of product 1 and sample 2.
The electrical parameter comparison result of table 1 sample 1 and sample 2
The data that integrating sphere obtains are subjected to analysis comparison, from table 1 it follows that LED extension provided by the invention is raw The LED leakage current of rectangular method preparation becomes smaller, and luminous efficiency gets a promotion, all other LED electrical parameters improve, experimental data card This patent scheme, which is illustrated, can promote the feasibility of LED product luminous efficiency.
Compared with prior art, LED epitaxial growth method described herein achieving the following effects:
The present invention stops electronics by first growing one layer of InGaN:Zn structure sheaf for adulterating Zn after growing multiple quantum well layer It is migrated to p-type GaN, avoids a large amount of electronics from leaking out from multiple quantum well layer to P-type layer, so that the electronics for improving multiple quantum well layer is dense Degree；Then by growing the thin barrier layer of AlGaN:Mg of highly doped Mg concentration, to provide high hole concentration, and hole is effectively pushed Multiple quantum well layer is injected, the electron hole pair quantity of multiple quantum well layer is increased.In addition, using AlGaN and InGaN lattice not Match, generates two-dimensional hole gas in the interface of InGaN:Zn structure sheaf and the thin barrier layer of AlGaN:Mg, by two-dimensional hole gas, improve Hole efficiency extending transversely further increases the hole Injection Level of multiple quantum well layer, reduces the operating voltage of LED, improves LED Luminous efficiency.Since method part has been described in detail the embodiment of the present application, here to involved in embodiment The expansion of structure and method corresponding part describes to omit, and repeats no more.Method can refer to for the description of particular content in structure The content of embodiment is no longer specific here to limit.
Above description shows and describes several preferred embodiments of the present application, but as previously described, it should be understood that the application Be not limited to forms disclosed herein, should not be regarded as an exclusion of other examples, and can be used for various other combinations, Modification and environment, and the above teachings or related fields of technology or knowledge can be passed through in application contemplated scope described herein It is modified.And changes and modifications made by those skilled in the art do not depart from spirit and scope, then it all should be in this Shen It please be in the protection scope of appended claims.

Claims (10)

1. a kind of LED epitaxial growth method, the LED extension is to be carried out using metallochemistry vapour deposition process MOCVD to substrate What processing obtained, comprising:
It is 1000-1100 DEG C in temperature, reaction cavity pressure is 100-300mbar, is passed through the H of 100-130L/min2Under conditions of, Processing Sapphire Substrate 5-10 minutes；
Growing low temperature GaN buffer layer, and irregular island is formed in the low temperature GaN buffer；
Grow undoped GaN layer；
Grow the N-type GaN layer of Si doping；
Grow multiple quantum well layer；
It is 750-900 DEG C in temperature, reaction cavity pressure is 800-950mbar, is passed through the NH of 50000-55000sccm3、50- The H of TMGa, 90-110L/min of 70sccm2, 1200-1400sccm TMIn, 1000sccm-1500sccm DMZn item Under part, growth thickness is the InGaN:Zn structure sheaf of 15-35nm, and wherein Zn doping concentration is 1 × 1017atoms/cm3-5× 1017atoms/cm3；
It is 750-900 DEG C in temperature, reaction cavity pressure is 800-950mbar, is passed through the NH of 50000-55000sccm3、50- The H of TMGa, 90-110L/min of 70sccm2, 1200-1400sccm TMAl, 800sccm-1050sccm CP2The condition of Mg Under, growth thickness is the thin barrier layer of AlGaN:Mg of 15-35nm, and wherein Mg doping concentration is 3 × 1017atoms/cm3-6× 1017atoms/cm3；
Growing P-type AlGaN layer；
Grow the p-type GaN layer of Mg doping；
20-30min is kept the temperature under conditions of temperature is 650-680 DEG C, heating system is then switched off, closes and give gas system, with furnace It is cooling.
2. LED epitaxial growth method according to claim 1, which is characterized in that
It is 500-600 DEG C in temperature, reaction cavity pressure is 300-600mbar, is passed through the NH of 10000-20000sccm3、50- The H of TMGa, 100-130L/min of 100sccm2Under conditions of, the buffering of the low temperature GaN described in the Grown on Sapphire Substrates Layer, the low temperature GaN buffer with a thickness of 20-40nm.
3. LED epitaxial growth method according to claim 2, which is characterized in that
Temperature is 1000-1100 DEG C, reaction cavity pressure is 300-600mbar, it is passed through the NH of 30000-40000sccm3、100L/ The H of min-130L/min2Under conditions of, the irregular island is formed on the low temperature GaN buffer.
4. LED epitaxial growth method according to claim 1, which is characterized in that
It is 1000-1200 DEG C in temperature, reaction cavity pressure is 300-600mbar, is passed through the NH of 30000-40000sccm3、200- The H of TMGa, 100-130L/min of 400sccm2Under conditions of, the undoped GaN layer of growth；The undoped GaN layer With a thickness of 2-4 μm.
5. LED epitaxial growth method according to claim 1, which is characterized in that
The N-type GaN layer, comprising: the first N-type GaN layer and the second N-type GaN layer, wherein
It is 1000-1200 DEG C in temperature, reaction cavity pressure is 300-600mbar, is passed through the NH of 30000-60000sccm3、200- The H of TMGa, 100-130L/min of 400sccm2, 20-50sccm SiH4Under conditions of, first N-type of growth Si doping GaN, the first N-type GaN with a thickness of 3-4 μm, the concentration of Si doping is 5 × 1018atoms/cm3-1×1019atoms/ cm3；
It is 1000-1200 DEG C in temperature, reaction cavity pressure is 300-600mbar, is passed through the NH of 30000-60000sccm3、200- The H of TMGa, 100-130L/min of 400sccm2, 2-10sccm SiH4Under conditions of, second N-type of growth Si doping GaN, the second N-type GaN with a thickness of 200-400nm, the concentration of Si doping is 5 × 1017atoms/cm3-1× 1018atoms/cm3。
6. LED epitaxial growth method according to claim 1, which is characterized in that
The growth multiple quantum well layer, comprising: the In of alternating growthxGa(1-x)N well layer and GaN barrier layer, alternate cycle are controlled in 7- 15.
7. LED epitaxial growth method according to claim 6, which is characterized in that
It is 700-750 DEG C in temperature, reacts cavity pressure 300-400mbar, be passed through the NH of 50000-70000sccm3、20-40sccm TMGa, 1500-2000sccm TMIn, 100-130L/min N2Under conditions of, grow the InxGa(1-x)N well layer,
Wherein, the InxGa(1-x)N is 0.20- with a thickness of 2.5-3.5nm, the value range of emission wavelength 450-455nm, x 0.25。
8. LED epitaxial growth method according to claim 6, which is characterized in that
It is 750-850 DEG C in temperature, reacts cavity pressure 300-400mbar, be passed through the NH of 50000-70000sccm3、20- The N of TMGa, 100-130L/min of 100sccm2Under conditions of, grow the GaN barrier layer, the GaN barrier layer with a thickness of 8- 15nm。
9. LED epitaxial growth method according to claim 1, which is characterized in that
It is 900-950 DEG C in temperature, reaction cavity pressure is 200-400mbar, is passed through the NH of 50000-70000sccm3、30- The H of TMGa, 100-130L/min of 60sccm2, 100-130sccm TMAl, 1000-1300sccm Cp2Under conditions of Mg, Grow the p-type AlGaN layer, the p-type AlGaN layer with a thickness of 50-100nm,
Wherein, the concentration of Al doping is 1 × 1020atoms/cm3-3×1020atoms/cm3, Mg doping concentration be 1 × 1019atoms/cm3-1×1020atoms/cm3。
10. LED epitaxial growth method according to claim 1, which is characterized in that
It is 950-1000 DEG C in temperature, reaction cavity pressure is 400-900mbar, is passed through the NH of 50000-70000sccm3、20- The H of TMGa, 100-130L/min of 100sccm2, 1000-3000sccm Cp2Under conditions of Mg, growth thickness 50-200nm Mg doped p-type GaN layer, Mg doping concentration 1 × 1019atoms/cm3-1×1020atoms/cm3。
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