CN108598233A - A kind of LED outer layer growths method - Google Patents

A kind of LED outer layer growths method Download PDF

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Publication number
CN108598233A
CN108598233A CN201810378693.6A CN201810378693A CN108598233A CN 108598233 A CN108598233 A CN 108598233A CN 201810378693 A CN201810378693 A CN 201810378693A CN 108598233 A CN108598233 A CN 108598233A
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gan
layer
growth
temperature
passed
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徐平
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Xiangneng Hualei Optoelectrical Co Ltd
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Xiangneng Hualei Optoelectrical Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
    • H01L21/205—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen

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Abstract

This application discloses a kind of LED outer layer growths methods, include successively：Processing substrate, low temperature growth buffer layer GaN, the GaN layer that undopes, the N-type GaN layer of growth doping Si, growth AlGaN/GaN superlattice layers, alternating growth In are grownxGa(1‑x)N/GaN luminescent layers, growth AlGaN electronic barrier layers, the p-type GaN layer of growth doping Mg, alternating growth InGaN/GaN superlattice layers, cooling down.The present invention by introducing AlGaN/GaN superlattices and InGaN/GaN short period superlattice structures respectively, for reducing the stress that lattice mismatch is brought, improve the lattice quality of luminescent layer, promote the antistatic effect of LED component, and improve the concentration in hole, ohm contact performance between raising ITO and p GaN, reduces the forward voltage of LED.

Description

A kind of LED outer layer growths method
Technical field
The invention belongs to LED technology fields, and in particular to a kind of LED outer layer growths method.
Background technology
Light emitting diode (Light-Emitting Diode, LED) is a kind of semi-conductor electricity converting electrical energy into luminous energy Sub- device.When the current flows, electronics and hole are compound in it and send out monochromatic light.LED is as a kind of efficient, environmentally friendly, green Color New Solid lighting source has low-voltage, low-power consumption, small, light-weight, long lifespan, high reliability, rich in color etc. Advantage.
The scale of domestic production LED gradually expands at present, but existing LED epitaxial growths luminescent layer still has crystalline substance Lattice poor quality, ITO (In2O3: Sn, abbreviation ITO) the problems such as ohmic contact resistance is big between p-GaN, influence the energy saving of LED Effect.
Therefore it provides a kind of LED outer layer growths method, improves the lattice quality of luminescent layer, and improve ITO and p-GaN Between ohm contact performance, reduce the forward voltage of LED, be the art technical problem urgently to be resolved hurrily.
Invention content
To solve the above problems, the present invention is super brilliant by introducing AlGaN/GaN superlattices and InGaN/GaN short cycles respectively Lattice structure improves the lattice quality of luminescent layer for reducing the stress that lattice mismatch is brought, and promotes the antistatic energy of LED component Power, and the concentration in hole is improved, ohm contact performance between ITO and p-GaN is improved, the forward voltage of LED is reduced.
The LED outer layer growth methods of the present invention, the LED epitaxial layers are to use metallo-organic compound chemical vapor deposition What area method MOCVD was obtained, include successively：Processing substrate, low temperature growth buffer layer GaN, the GaN layer that undopes, growth doping are grown The N-type GaN layer of Si, growth AlGaN/GaN superlattice layers, alternating growth InxGa(1-x)N/GaN luminescent layers, growth AlGaN electronics Barrier layer, the p-type GaN layer of growth doping Mg, alternating growth InGaN/GaN superlattice layers, cooling down.
It is described growth AlGaN/GaN superlattice layers detailed process be：
1) reaction cavity pressure 200mbar-400mbar, 900 DEG C -950 DEG C of temperature are kept, it is 50000sccm- to be passed through flow The NH of 70000sccm3, 50sccm-70sccm TMGa, 100L/min-130L/min H2, 120sccm-150sccm TMAl And the Cp of 1000sccm-1300sccm2Mg, continued propagation thickness are the AlGaN layer of 20nm-30nm, wherein Mg doping concentrations 1E19atoms/cm3-1E20atoms/cm3；
2) 1000 DEG C -1100 DEG C are increased the temperature to, keeps reaction cavity pressure 300mbar-600mbar, being passed through flow is The NH of 30000sccm-40000sccm3, 200sccm-400sccm TMGa and 100L/min-130L/min H2, above-mentioned The GaN layer of continued propagation 20nm-30nm above AlGaN layer.
The detailed process of the alternating growth InGaN/GaN superlattice layers is：
1) it keeps reaction cavity pressure 400mbar-500mbar, keep 850 DEG C -950 DEG C of temperature, being passed through flow is The NH of 50000sccm-70000sccm3, 25sccm-45sccm TMGa, 1000sccm-1500sccm TMIn and 100L/ The N of min-130L/min2, the InGaN layer of the 1nm-2nm of growth doping In；
2) temperature is reduced to 700 DEG C -800 DEG C, keeps reaction cavity pressure 300mbar-400mbar, being passed through flow is The NH of 50000sccm-70000sccm3, 100sccm-150sccm TMGa and 100L/min-130L/min N2, above-mentioned The GaN layer of 3nm-6nm is grown above InGaN layer；
3) alternating growth InGaN layer and GaN layer are repeated, wherein the alternating growth periodicity of InGaN layer and GaN layer is 3-5 It is a.
Preferably, the detailed process of the processing substrate is：
At a temperature of 1000 DEG C -1100 DEG C, it is passed through the H of 100L/min-130L/min2, keep reaction cavity pressure 100mbar-300mbar, processing Sapphire Substrate 5min-10min.
Preferably, the detailed process of the low temperature growth buffer layer GaN is：
500 DEG C -600 DEG C are cooled to, reaction cavity pressure 300mbar-600mbar is kept, it is 10000sccm- to be passed through flow The NH of 20000sccm3, 50sccm-100sccm TMGa and 100L/min-130L/min H2, grow on a sapphire substrate Thickness is the low temperature buffer layer GaN of 20nm-40nm；
1000 DEG C -1100 DEG C are increased the temperature to, keeps reaction cavity pressure 300mbar-600mbar, being passed through flow is The NH of 30000sccm-40000sccm3, 100L/min-130L/min H2, 300s-500s is kept the temperature, low temperature buffer layer GaN is rotten Lose into irregular island shape.
Preferably, the detailed process for growing the GaN layer that undopes is：
1000 DEG C -1200 DEG C are increased the temperature to, keeps reaction cavity pressure 300mbar-600mbar, being passed through flow is The NH of 30000sccm-40000sccm3, 200sccm-400sccm TMGa and 100L/min-130L/min H2, continued propagation 2 μm -4 μm of the GaN layer that undopes.
Preferably, the detailed process of the growth doped gan layer is：
Reaction cavity pressure 300mbar-600mbar is kept, keeps 1000 DEG C -1200 DEG C of temperature, being passed through flow is The NH of 30000sccm-60000sccm3, 200sccm-400sccm TMGa, 100L/min-130L/min H2And 20sccm- The SiH of 50sccm4, the N-type GaN of 3 μm of -4 μm of doping Si of continued propagation, wherein Si doping concentrations 5E18atoms/cm3- 1E19atoms/cm3。
Preferably, the alternating growth InxGa(1-x)The detailed process of N/GaN luminescent layers is：
It keeps reaction cavity pressure 300mbar-400mbar, keep 700 DEG C -750 DEG C of temperature, being passed through flow is The NH of 50000sccm-70000sccm3, 20sccm-40sccm TMGa, 1500sccm-2000sccm TMIn and 100L/ The N of min-130L/min2, the In of the 2.5nm-3.5nm of growth doping InxGa(1-x)N layers, wherein x=0.20-0.25 shines Wavelength is 450nm-455nm；
Temperature is increased to 750 DEG C -850 DEG C, keeps reaction cavity pressure 300mbar-400mbar, being passed through flow is The NH of 50000sccm-70000sccm3, 20sccm-100sccm TMGa and 100L/min-130L/min N2, grow 8nm- The GaN layer of 15nm；
Repeat alternating growth InxGa(1-x)N layers and GaN layer, obtain InxGa(1-x)N/GaN luminescent layers, wherein InxGa(1-x)N Layer and the alternating growth periodicity of GaN layer are 7-15.
Preferably, the detailed process of the growth AlGaN electronic barrier layers is：
It it is 900-950 DEG C in temperature, reaction cavity pressure is 200-400mbar, is passed through the NH of 50000-70000sccm3、 The H of TMGa, 100-130L/min of 30-60sccm2, 100-130sccm TMAl, 1000-1300sccm Cp2The condition of Mg Under, the AlGaN electronic barrier layers are grown, the thickness of the AlGaN layer is 50-75nm, wherein Mg is adulterated a concentration of 1E19atoms/cm3-1E20atoms/cm3。
Preferably, the detailed process for growing the p-type GaN layer for mixing Mg is：
Reaction cavity pressure 400mbar-900mbar, 950 DEG C -1000 DEG C of temperature are kept, it is 50000sccm- to be passed through flow The NH of 70000sccm3, 20sccm-100sccm TMGa, 100L/min-130L/min H2And 1000sccm-3000sccm Cp2The p-type GaN layer for mixing Mg of Mg, continued propagation 50nm-200nm, wherein Mg doping concentrations 1E19atoms/cm3- 1E20atoms/cm3。
Preferably, the detailed process of the cooling down is：
650 DEG C -680 DEG C are cooled to, 20min-30min is kept the temperature, heating system is closed, closes and give gas system, furnace cooling.
Compared with prior art, LED outer layer growths method described herein, has reached following effect：
1, it is inserted into one layer of AlGaN/GaN superlattices between n-GaN and luminescent layer, is answered for reduce that lattice mismatch brings Power improves the lattice quality of luminescent layer.Meanwhile, it is capable to reduce the dislocation of lattice mismatch generation, epitaxial layer dislocation density is reduced, is carried High entire epitaxial layer crystal quality, promotes the antistatic effect of LED component.
2, ITO current extendings can more preferably be matched by InGaN/GaN short period superlattices structure being deposited on p-GaN, Ohm contact performance between raising ITO and p-GaN, reduces contact resistance, to reduce the operating voltage of LED chip.In addition, energy It allows semiconductor depletion region to narrow, so that carrier is had more chance tunnellings, improve the concentration in hole, improve the luminous efficiency of LED.
Description of the drawings
Attached drawing described herein is used to provide further understanding of the present invention, and constitutes the part of the present invention, this hair Bright illustrative embodiments and their description are not constituted improper limitations of the present invention for explaining the present invention.In the accompanying drawings：
Fig. 1 is the structural schematic diagram of LED epitaxial layers prepared by the method for the present invention；
Fig. 2 is the structural schematic diagram of the LED epitaxial layers of traditional technology；
Wherein, 1, Sapphire Substrate, 2, low temperature GaN buffer, 3, undoped GaN layer, 4, n-type GaN layer, 5, AlGaN/ GaN superlattices, 6, InxGa(1-x)N/GaN luminescent layers, 7, electronic barrier layer AlGaN, 8, p-type GaN, 9, InGaN/GaN superlattices, Wherein, 5-AlGaN/GaN superlattices include AlGaN layer 51 and GaN layer 52,6-InxGa(1-x)N/GaN luminescent layers include alternately giving birth to Long InxGa(1-x)N well layer 61 and GaN barrier layer 62,9-InGaN/GaN superlattices include the InGaN layer 91 and GaN of alternating growth Layer 92.
Specific implementation mode
Some vocabulary has such as been used to censure specific components in specification and claim.Those skilled in the art answer It is understood that hardware manufacturer may call the same component with different nouns.This specification and claims are not with name The difference of title is used as the mode for distinguishing component, but is used as the criterion of differentiation with the difference of component functionally.Such as logical The "comprising" of piece specification and claim mentioned in is an open language, therefore should be construed to " include but do not limit In "." substantially " refer in receivable error range, those skilled in the art can be described within a certain error range solution Technical problem basically reaches the technique effect.Specification subsequent descriptions are to implement the better embodiment of the application, so described Description is being not limited to scope of the present application for the purpose of the rule for illustrating the application.The protection domain of the application When subject to appended claims institute defender.
In addition, there is no the structures that component disclosed in claims and method and step are defined in embodiment for this specification Part and method and step.In particular, the size for the structure member recorded in embodiments, material, shape, its structural order and neighbour It connects sequence and manufacturing method etc. to limit as long as no specific, is just only used as and illustrates example, rather than the scope of the present invention is limited Due to this.The size and location relationship of structure member shown in attached drawing is amplified and is shown to clearly illustrate.
The application is described in further detail below in conjunction with attached drawing, but not as the restriction to the application.
Embodiment 1
The present embodiment uses LED outer layer growths method provided by the invention, using MOCVD next life long high brightness GaN-based LED epitaxial wafer, using high-purity H2Or high-purity N2Or high-purity H2And high-purity N2Mixed gas as carrier gas, high-purity N H3As the sources N, Metal organic source trimethyl gallium (TMGa) is used as gallium source, trimethyl indium (TMIn) to be used as indium source, and N type dopant is silane (SiH4), it is two luxuriant magnesium (CP that trimethyl aluminium (TMAl), which is used as silicon source, P-type dopant,2Mg), reaction pressure is arrived in 70mbar Between 900mbar.Specific growth pattern is following (epitaxial layer structure please refers to Fig.1)：
A kind of LED outer layer growths method includes successively：Processing substrate, low temperature growth buffer layer GaN, growth undope GaN layer, the N-type GaN layer of growth doping Si, growth AlGaN/GaN superlattice layers, alternating growth InxGa(1-x)N/GaN luminescent layers, Grow AlGaN electronic barrier layers, the p-type GaN layer of growth doping Mg, alternating growth InGaN/GaN superlattice layers, cooling down； Wherein,
Step 1：Handle substrate.
Specifically, the step 1, further for：
It it is 1000-1100 DEG C in temperature, reaction cavity pressure is 100-300mbar, is passed through the H of 100-130L/min2Item Under part, processing Sapphire Substrate 5-10 minutes.
Step 2：Growing low temperature GaN buffer layers, and form irregular island in the low temperature GaN buffer.
Specifically, the step 2, further for：
It it is 500-600 DEG C in temperature, reaction cavity pressure is 300-600mbar, is passed through the NH of 10000-20000sccm3、 The H of TMGa, 100-130L/min of 50-100sccm2Under conditions of, the low temperature buffer described in the Grown on Sapphire Substrates The thickness of layer GaN, the low temperature GaN buffer are 20-40nm；
Temperature is 1000-1100 DEG C, reaction cavity pressure is 300-600mbar, it is passed through the NH of 30000-40000sccm3、 The H of 100L/min-130L/min2Under conditions of, the irregular island is formed on the low temperature buffer layer GaN.
Step 3：Grow undoped GaN layer.
Specifically, the step 3, further for：
It it is 1000-1200 DEG C in temperature, reaction cavity pressure is 300-600mbar, is passed through the NH of 30000-40000sccm3、 The H of TMGa, 100-130L/min of 200-400sccm2Under conditions of, the undoped GaN layer of growth；It is described undoped The thickness of GaN layer is 2-4 μm.
Step 4：Grow the N-type GaN layer of Si doping.
Specifically, the step 4, further for：
Reaction cavity pressure 300mbar-600mbar is kept, keeps 1000 DEG C -1200 DEG C of temperature, being passed through flow is The NH of 30000sccm-60000sccm3, 200sccm-400sccm TMGa, 100L/min-130L/min H2And 20sccm- The SiH of 50sccm4, the N-type GaN of 3 μm of -4 μm of doping Si of continued propagation, wherein Si doping concentrations 5E18atoms/cm3- 1E19atoms/cm3。
Step 5：Grow AlGaN/GaN superlattice layers.
Specifically, the step 5, further for：
Reaction cavity pressure 200mbar-400mbar, 900 DEG C -950 DEG C of temperature are kept, it is 50000sccm- to be passed through flow The NH of 70000sccm3, 50sccm-70sccm TMGa, 100L/min-130L/min H2, 120sccm-150sccm TMAl And the Cp of 1000sccm-1300sccm2Mg, continued propagation thickness d1For the AlGaN layer of 20nm-30nm, wherein Mg doping concentrations 1E19atoms/cm3-1E20atoms/cm3；
1000 DEG C -1100 DEG C are increased the temperature to, keeps reaction cavity pressure 300mbar-600mbar, being passed through flow is The NH of 30000sccm-40000sccm3, 200sccm-400sccm TMGa and 100L/min-130L/min H2, above-mentioned Continued propagation thickness d above AlGaN layer2For the GaN layer of 20nm-30nm, wherein d1=d2。
Step 6：Alternating growth InxGa(1-x)N/GaN luminescent layers.
Specifically, the step 6 includes the In of alternating growthxGa(1-x)N well layer and GaN barrier layer, alternate cycle are controlled in 7- 15.
Grow the InxGa(1-x)N well layer, further for：
It is 700-750 DEG C in temperature, reacts cavity pressure 300-400mbar, be passed through the NH of 50000-70000sccm3、20- The N of TMIn, 100-130L/min of TMGa, 1500-2000sccm of 40sccm2Under conditions of, grow the InxGa(1-x)N traps Layer, wherein the InxGa(1-x)N thickness is 2.5-3.5nm, and the value range of emission wavelength 450-455nm, x are 0.20- 0.25。
Grow the GaN barrier layer, further for：
It is 750-850 DEG C in temperature, reacts cavity pressure 300-400mbar, be passed through the NH of 50000-70000sccm3、20- The N of TMGa, 100-130L/min of 100sccm2Under conditions of, the GaN barrier layer is grown, the thickness of the GaN barrier layer is 8- 15nm。
Step 7：Grow electronic barrier layer AlGaN.
Specifically, the step 7, further for：
It it is 900-950 DEG C in temperature, reaction cavity pressure is 200-400mbar, is passed through the NH of 50000-70000sccm3、 The H of TMGa, 100-130L/min of 30-60sccm2, 100-130sccm TMAl, 1000-1300sccm Cp2The condition of Mg Under, the AlGaN electronic barrier layers are grown, the thickness of the AlGaN layer is 50-75nm, wherein Mg is adulterated a concentration of 1E19atoms/cm3-1E20atoms/cm3。
Step 8：Grow the p-type GaN layer of Mg doping.
Specifically, the step 8, further for：
It it is 950-1000 DEG C in temperature, reaction cavity pressure is 400-900mbar, is passed through the NH of 50000-70000sccm3、 The H of TMGa, 100-130L/min of 20-100sccm2, 1000-3000sccm Cp2Under conditions of Mg, growth thickness 50- The Mg doped p-type GaN layers of 200nm, Mg doping concentrations 1E19atoms/cm3-1E20atoms/cm3。
Step 9：Alternating growth InGaN/GaN superlattice layers.
Specifically, the step 9, further for：
It keeps reaction cavity pressure 400mbar-500mbar, keep 850 DEG C -950 DEG C of temperature, being passed through flow is The NH of 50000sccm-70000sccm3, 25sccm-45sccm TMGa, 1000sccm-1500sccm TMIn and 100L/ The N of min-130L/min2, growth doping In thickness D1For the InGaN layer of 1nm-2nm；
Temperature is reduced to 700 DEG C -800 DEG C, keeps reaction cavity pressure 300mbar-400mbar, being passed through flow is The NH of 50000sccm-70000sccm3, 100sccm-150sccm TMGa and 100L/min-130L/min N2, above-mentioned Growth thickness D above InGaN layer2For the GaN layer of 3nm-6nm, wherein D2=3D1；
Repeat alternating growth InGaN layer and GaN layer, wherein the alternating growth periodicity of InGaN layer and GaN layer is 3-5 It is a.
Step 10：Temperature be 650-680 DEG C under conditions of keep the temperature 20-30min, be then switched off heating system, close to Gas system, furnace cooling.
Embodiment 2
Comparative example presented below, the i.e. growing method of tradition LED epitaxial layers.
The growing method of traditional LED epitaxial layers is (epitaxial layer structure is referring to Fig. 2)：
Step 1：It it is 1000-1100 DEG C in temperature, reaction cavity pressure is 100-300mbar, is passed through 100-130L/min's H2Under conditions of, processing Sapphire Substrate 5-10 minutes.
Step 2：Growing low temperature GaN buffer layers, and form irregular island in the low temperature GaN buffer.
Specifically, the step 2, further for：
It it is 500-600 DEG C in temperature, reaction cavity pressure is 300-600mbar, is passed through the NH of 10000-20000sccm3、 The H of TMGa, 100-130L/min of 50-100sccm2Under conditions of, the low temperature buffer described in the Grown on Sapphire Substrates The thickness of layer GaN, the low temperature GaN buffer are 20-40nm；
Temperature is 1000-1100 DEG C, reaction cavity pressure is 300-600mbar, it is passed through the NH of 30000-40000sccm3、 The H of 100L/min-130L/min2Under conditions of, the irregular island is formed on the low temperature buffer layer GaN.
Step 3：Grow undoped GaN layer.
Specifically, the step 3, further for：
It it is 1000-1200 DEG C in temperature, reaction cavity pressure is 300-600mbar, is passed through the NH of 30000-40000sccm3、 The H of TMGa, 100-130L/min of 200-400sccm2Under conditions of, the undoped GaN layer of growth；It is described undoped The thickness of GaN layer is 2-4 μm.
Step 4：Grow the N-type GaN layer of Si doping.
Specifically, the step 4, further for：
It it is 1000-1200 DEG C in temperature, reaction cavity pressure is 300-600mbar, is passed through the NH of 30000-60000sccm3、 The H of TMGa, 100-130L/min of 200-400sccm2, 20-50sccm SiH4Under conditions of, the N-type GaN of growth Si doping, The thickness of the N-type GaN is 3-4 μm, a concentration of 5E18atoms/cm of Si doping3-1E19atoms/cm3。
Step 5：Grow InxGa(1-x)N/GaN multi-quantum well luminescence layers.
Specifically, the step 5 includes the In of alternating growthxGa(1-x)N well layer and GaN barrier layer, alternate cycle are controlled in 7- 15.
Grow institute InxGa(1-x)N well layer, further for：
It is 700-750 DEG C in temperature, reacts cavity pressure 300-400mbar, be passed through the NH of 50000-70000sccm3、20- The N of TMIn, 100-130L/min of TMGa, 1500-2000sccm of 40sccm2Under conditions of, grow the InxGa(1-x)N traps Layer, wherein the InxGa(1-x)N thickness is 2.5-3.5nm, and the value range of emission wavelength 450-455nm, x are 0.20- 0.25。
Grow the GaN barrier layer, further for：
It is 750-850 DEG C in temperature, reacts cavity pressure 300-400mbar, be passed through the NH of 50000-70000sccm3、20- The N of TMGa, 100-130L/min of 100sccm2Under conditions of, the GaN barrier layer is grown, the thickness of the GaN barrier layer is 8- 15nm。
Step 6：Grow AlGaN electronic barrier layers.
Specifically, the step 6, further for：
It it is 900-950 DEG C in temperature, reaction cavity pressure is 200-400mbar, is passed through the NH of 50000-70000sccm3、 The H of TMGa, 100-130L/min of 30-60sccm2, 100-130sccm TMAl, 1000-1300sccm Cp2The condition of Mg Under, the AlGaN electronic barrier layers are grown, the thickness of the AlGaN layer is 50-75nm, wherein Mg is adulterated a concentration of 1E19atoms/cm3-1E20atoms/cm3。
Step 7：Grow the p-type GaN layer of Mg doping.
Specifically, the step 7, further for：
It it is 950-1000 DEG C in temperature, reaction cavity pressure is 400-900mbar, is passed through the NH of 50000-70000sccm3、 The H of TMGa, 100-130L/min of 20-100sccm2, 1000-3000sccm Cp2Under conditions of Mg, growth thickness 50- The Mg doped p-type GaN layers of 200nm, Mg doping concentrations 1E19atoms/cm3-1E20atoms/cm3。
Step 8：20-30min is kept the temperature under conditions of temperature is 650-680 DEG C, heating system is then switched off, closes to gas System, furnace cooling.
Sample 1 and sample 2, sample 1 and sample 2 is made respectively according to above-described embodiment 1 and embodiment 2 in identical preceding work ITO layer about 150nm is plated under the conditions of skill, plates Cr/Pt/Au electrode about 1500nm under the same conditions, under the same conditions plating protection Layer SiO2About 100nm, then under the same conditions by sample grinding and cutting at the core of 635 μm * 635 μm (25mil*25mil) Sample 1 and sample 2 are respectively selected 100 crystal grain by piece particle in same position later, under identical packaging technology, encapsulation At white light LEDs.Using the photoelectric properties of integrating sphere test sample 1 and sample 2 under the conditions of driving current 350mA.
The electrical parameter comparison result of table 1 sample 1 and sample 2
The data that integrating sphere obtains are subjected to analysis comparison, from table 1 it follows that LED (samples prepared by the method for the present invention Product 1) operating voltage is obviously lower, and antistatic yield is high, and luminous efficiency is obviously improved, this has benefited from this patent scheme Introduce AlGaN/GaN superlattices and InGaN/GaN short period superlattice structures.
Compared with prior art, LED outer layer growths method described herein, has reached following effect：
1, it is inserted into one layer of AlGaN/GaN superlattices between n-GaN and luminescent layer, is answered for reduce that lattice mismatch brings Power improves the lattice quality of luminescent layer.Meanwhile, it is capable to reduce the dislocation of lattice mismatch generation, epitaxial layer dislocation density is reduced, is carried High entire epitaxial layer crystal quality, promotes the antistatic effect of LED component.
2, ITO current extendings can more preferably be matched by InGaN/GaN short period superlattices structure being deposited on p-GaN, Ohm contact performance between raising ITO and p-GaN, reduces contact resistance, to reduce the operating voltage of LED chip.In addition, energy It allows semiconductor depletion region to narrow, so that carrier is had more chance tunnellings, improve the concentration in hole, improve the luminous efficiency of LED.
Since method part has been described in detail the embodiment of the present application, here to the structure involved in embodiment Expansion with method corresponding part describes to omit, and repeats no more.Method is can refer to for the description of particular content in structure to implement The content of example is no longer specific here to limit.
Several preferred embodiments of the application have shown and described in above description, but as previously described, it should be understood that the application Be not limited to form disclosed herein, be not to be taken as excluding other embodiments, and can be used for various other combinations, Modification and environment, and the above teachings or related fields of technology or knowledge can be passed through in application contemplated scope described herein It is modified.And changes and modifications made by those skilled in the art do not depart from spirit and scope, then it all should be in this Shen It please be in the protection domain of appended claims.

Claims (9)

1. a kind of LED outer layer growths method, includes successively：Processing substrate, grows the GaN that undopes at low temperature growth buffer layer GaN Layer, the N-type GaN layer of growth doping Si, growth AlGaN/GaN superlattice layers, alternating growth InxGa(1-x)N/GaN luminescent layers, life Long AlGaN electronic barrier layers, the p-type GaN layer of growth doping Mg, alternating growth InGaN/GaN superlattice layers, cooling down, It is characterized in that,
It is described growth AlGaN/GaN superlattice layers detailed process be：
1) reaction cavity pressure 200mbar-400mbar, 900 DEG C -950 DEG C of temperature are kept, it is 50000sccm- to be passed through flow The NH of 70000sccm3, 50sccm-70sccm TMGa, 100L/min-130L/min H2, 120sccm-150sccm TMAl And the Cp of 1000sccm-1300sccm2Mg, continued propagation thickness are the AlGaN layer of 20nm-30nm, wherein Mg doping concentrations 1E19atoms/cm3-1E20atoms/cm3；
2) 1000 DEG C -1100 DEG C are increased the temperature to, keeps reaction cavity pressure 300mbar-600mbar, being passed through flow is The NH of 30000sccm-40000sccm3, 200sccm-400sccm TMGa and 100L/min-130L/min H2, above-mentioned The GaN layer of continued propagation 20nm-30nm above AlGaN layer；
The detailed process of the alternating growth InGaN/GaN superlattice layers is：
1) it holds reaction cavity pressure 400mbar-500mbar, keep 850 DEG C -950 DEG C of temperature, it is 50000sccm- to be passed through flow The NH of 70000sccm3, 25sccm-45sccm TMGa, 1000sccm-1500sccm TMIn and 100L/min-130L/min N2, the InGaN layer of the 1nm-2nm of growth doping In；
2) temperature is reduced to 700 DEG C -800 DEG C, keeps reaction cavity pressure 300mbar-400mbar, being passed through flow is The NH of 50000sccm-70000sccm3, 100sccm-150sccm TMGa and 100L/min-130L/min N2, above-mentioned The GaN layer of 3nm-6nm is grown above InGaN layer；
3) alternating growth InGaN layer and GaN layer are repeated, wherein the alternating growth periodicity of InGaN layer and GaN layer is 3-5.
2. LED outer layer growths method according to claim 1, which is characterized in that in 1000 DEG C -1100 DEG C of temperature Under, it is passed through the H of 100L/min-130L/min2, reaction cavity pressure 100mbar-300mbar is kept, Sapphire Substrate is handled 5min-10min。
3. LED outer layer growths method according to claim 2, which is characterized in that the low temperature growth buffer layer GaN's Detailed process is：
500 DEG C -600 DEG C are cooled to, reaction cavity pressure 300mbar-600mbar is kept, it is 10000sccm- to be passed through flow The NH of 20000sccm3, 50sccm-100sccm TMGa and 100L/min-130L/min H2, grow on a sapphire substrate Thickness is the low temperature buffer layer GaN of 20nm-40nm；
1000 DEG C -1100 DEG C are increased the temperature to, keeps reaction cavity pressure 300mbar-600mbar, being passed through flow is The NH of 30000sccm-40000sccm3, 100L/min-130L/min H2, 300s-500s is kept the temperature, low temperature buffer layer GaN is rotten Lose into irregular island shape.
4. LED outer layer growths method according to claim 1, which is characterized in that the tool for growing the GaN layer that undopes Body process is：
1000 DEG C -1200 DEG C are increased the temperature to, keeps reaction cavity pressure 300mbar-600mbar, being passed through flow is The NH of 30000sccm-40000sccm3, 200sccm-400sccm TMGa and 100L/min-130L/min H2, continued propagation 2 μm -4 μm of the GaN layer that undopes.
5. LED outer layer growths method according to claim 1, which is characterized in that the N-type GaN of the growth doping Si Layer detailed process be：
Reaction cavity pressure 300mbar-600mbar is kept, 1000 DEG C -1200 DEG C of temperature is kept, it is 30000sccm- to be passed through flow The NH of 60000sccm3, 200sccm-400sccm TMGa, 100L/min-130L/min H2And 20sccm-50sccm SiH4, the N-type GaN of 3 μm of -4 μm of doping Si of continued propagation, wherein Si doping concentrations 5E18atoms/cm3-1E19atoms/cm3。
6. LED outer layer growths method according to claim 1, which is characterized in that the alternating growth InxGa(1-x)N/ The detailed process of GaN luminescent layers is：
It keeps reaction cavity pressure 300mbar-400mbar, keep 700 DEG C -750 DEG C of temperature, it is 50000sccm- to be passed through flow The NH of 70000sccm3, 20sccm-40sccm TMGa, 1500sccm-2000sccm TMIn and 100L/min-130L/min N2, the In of the 2.5nm-3.5nm of growth doping InxGa(1-x)N layers, wherein x=0.20-0.25, emission wavelength 450nm- 455nm；
Temperature is increased to 750 DEG C -850 DEG C, keeps reaction cavity pressure 300mbar-400mbar, it is 50000sccm- to be passed through flow The NH of 70000sccm3, 20sccm-100sccm TMGa and 100L/min-130L/min N2, grow the GaN of 8nm-15nm Layer；
Repeat alternating growth InxGa(1-x)N layers and GaN layer, obtain InxGa(1-x)N/GaN luminescent layers, wherein InxGa(1-x)N layers and The alternating growth periodicity of GaN layer is 7-15.
7. LED outer layer growths method according to claim 1, which is characterized in that the growth AlGaN electronic barrier layers Detailed process be：
It it is 900-950 DEG C in temperature, reaction cavity pressure is 200-400mbar, is passed through the NH of 50000-70000sccm3、30- The H of TMGa, 100-130L/min of 60sccm2, 100-130sccm TMAl, 1000-1300sccm Cp2Under conditions of Mg, The AlGaN electronic barrier layers are grown, the thickness of the AlGaN layer is 50-75nm；Wherein, Mg doping is a concentration of 1E19atoms/cm3-1E20atoms/cm3。
8. LED outer layer growths method according to claim 1, which is characterized in that described to grow the p-type GaN layer for mixing Mg Detailed process be：
Reaction cavity pressure 400mbar-900mbar, 950 DEG C -1000 DEG C of temperature are kept, it is 50000sccm- to be passed through flow The NH of 70000sccm3, 20sccm-100sccm TMGa, 100L/min-130L/min H2And 1000sccm-3000sccm Cp2The p-type GaN layer for mixing Mg of Mg, continued propagation 50nm-200nm, wherein Mg doping concentrations 1E19atoms/cm3- 1E20atoms/cm3。
9. LED outer layer growths method according to claim 1, which is characterized in that the detailed process of the cooling down For：
650 DEG C -680 DEG C are cooled to, 20min-30min is kept the temperature, heating system is closed, closes and give gas system, furnace cooling.
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Application publication date: 20180928