CN104157746A - Novel quantum well barrier layer LED epitaxial growth method and epitaxial layer - Google Patents
Novel quantum well barrier layer LED epitaxial growth method and epitaxial layer Download PDFInfo
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- H—ELECTRICITY
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- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
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- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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Abstract
The invention provides a novel quantum well barrier layer LED epitaxial growth method and an LED epitaxial layer. The method sequentially comprises steps of processing a substrate, growing a low-temperature buffer GaN layer, growing a non-doped GaN layer, growing an n-type AlGaN layer, growing an n-type GaN layer, growing an active layer MQW, growing a P-type AlGaN layer, growing a P-type GaN layer and growing a p-type contact layer. the AlGaN thin layer is grown in a penetrating mode in the middle of the traditional active layer GaN barrier layer, the limiting and expanding ability of the light-emitting layer on electron can be enhanced, the ability of the quantum well to bond electron can be improved, the radiative recombination rate of a hole and electron in the potential well is obviously improved, the internal quantum efficiency is enhanced, and photoelectric properties of the LED device are improved.
Description
Technical field
The present invention relates to LED extension design field, especially, relate to a kind of LED epitaxial growth method and LED epitaxial loayer of novel quantum well barrier layer.
Background technology
LED is widely used in the wide spectrums such as display screen, transducer, communication, illumination.Can be combined with fluorescent material and manufacture white light as the GaN base blue-ray LED of core semiconductor device, aspect illumination, have very large attraction.
LED epitaxial wafer will improve luminous efficiency, and the most basic method is exactly the internal quantum efficiency that will strengthen epitaxial structure.At present, the internal quantum efficiency of domestic MOCVD growing GaN base LED epitaxial wafer can only reach 30% left and right, also have larger development to improve space, and the growth of active layer MQW is even more important to the raising of internal quantum efficiency.
Generally adopt at present in the industry GaN/InGaN material alternating growth active layer.After Injection Current, electronics in N-shaped GaN layer is because of its high mobility, can through luminescent layer (active layer MQW), move in the p-type GaN layer on active layer and form invalid radiation recombination with hole than being easier to, so virtually reduce internal quantum efficiency.
Therefore, be necessary to provide a kind of new active layer preparation method of GaN base LED epitaxial wafer, overcome above-mentioned technical problem.
Summary of the invention
The object of the invention is to provide a kind of LED epitaxial growth method of the novel quantum well barrier layer at an AlGaN thin layer of the middle interspersed growth of traditional GaN barrier layer and the LED epitaxial loayer making, to strengthen restriction and the extended capability of luminescent layer to electronics, thereby improve the photoelectric properties of LED device.
For achieving the above object, the invention provides a kind of LED epitaxial growth method of novel quantum well barrier layer, comprise successively and process substrate, low temperature growth buffer GaN layer, the non-Doped GaN layer of growing, growing n-type AlGaN layer, growing n-type GaN layer, growth active layer MQW, growing P-type AlGaN layer, growth P-type GaN layer, growing p-type contact layer step
The step of described growth active layer mqw layer is:
A, be nitrogen in atmosphere, or atmosphere is in the reative cell of nitrogen and hydrogen gas mixture, pressure is 150-300torr, temperature 730-760 DEG C, pass into the mixture of triethyl-gallium and trimethyl indium or pass into trimethyl gallium and the mixture of trimethyl indium, continue growth InxGa
(1-x)n potential well layer, wherein 0 < x<1, the doping content 2E+20-3E+20atom/cm of In
3, InxGa
(1-x)the thickness of N potential well layer is 2.5-3.5nm;
B, temperature are upgraded to 840-890 DEG C, stop passing into trimethyl indium, continue growing GaN barrier layer, and thickness is 4-5nm;
C, pass into trimethyl aluminium, continue growth AlyGa
(1-y)n barrier layer, wherein 0 < y<1, AlyGa
(1-y)the thickness of N barrier layer is 1-2nm, Al doping content 4E+19-8E+19atom/cm
3;
D, temperature are upgraded to 840-890 DEG C, stop passing into trimethyl aluminium, continue growing GaN barrier layer, and thickness is 4-5nm;
The circulating cycle issue of A, B, C, D step is 10-13.
Preferably, before the step of described growth active layer mqw layer, comprise growing n-type AlGaN layer:
Be nitrogen in atmosphere, or atmosphere is in the reative cell of nitrogen and hydrogen gas mixture, pressure is 50-200torr, temperature 900-1100 DEG C, passes into trimethyl gallium, trimethyl aluminium and silane, continues growing n-type AlGaN layer, thickness is 40-60nm, and the doping content of Al is 2E+20-6E+20atom/cm
3, the doping content of Si is 5E+17-9E+17atom/cm
3.
Preferably, before the step of described growth active layer mqw layer, comprise growing n-type GaN layer:
In atmosphere is the reative cell of nitrogen and hydrogen gas mixture, pressure is 100-250torr, and temperature 1050-1250 DEG C passes into trimethyl gallium and silane, continues growing n-type GaN layer, and thickness is 3.0-3.5um, and the doping content of Si is 4E+18-8E+18atom/cm
3.
Preferably, after the step of described growth active layer mqw layer, comprise growing p-type AlGaN layer:
Be nitrogen in atmosphere, or atmosphere is in the reative cell of nitrogen and hydrogen gas mixture, pressure is 50-200torr, temperature 850-1050 DEG C, pass into trimethyl gallium, trimethyl aluminium and two luxuriant magnesium, continue growing p-type AlGaN layer, thickness is 30-60nm, and the doping content of Al is 2E+20-6E+20atom/cm
3, the doping content of Mg is 5E+19-9E+19atom/cm
3.
Preferably, after the step of described growth active layer mqw layer, comprise growing p-type GaN layer:
In atmosphere is the reative cell of nitrogen and hydrogen gas mixture, pressure is 100-250torr, and temperature 850-1000 DEG C passes into trimethyl gallium and two luxuriant magnesium, continues growing p-type GaN layer, and thickness is 70-100nm, and the doping content of Mg is 2E+19-7E+19atom/cm
3.
Preferably, after the step of described growth active layer mqw layer, comprise growing p-type contact layer:
In atmosphere is the reative cell of nitrogen and hydrogen gas mixture, pressure is 100-250torr, and temperature 850-1000 DEG C passes into trimethyl gallium and two luxuriant magnesium, continues growing p-type contact layer, and thickness is 2-4nm, and the doping content of Mg is 7E+19-2E+20atom/cm
3.
The invention also discloses a kind of LED epitaxial loayer making according to the LED epitaxial growth method of above-mentioned novel quantum well barrier layer, described active layer MQW comprises 10-13 four layers of combination, and the structure of described four layers of combination comprises from bottom to up successively:
InxGa
(1-x)n potential well layer: thickness is 2.5-3.5nm, 0 < x<1, the doping content 2E+20-3E+20atom/cm of In
3;
The one GaN barrier layer: thickness is 4-5nm;
AlyGa
(1-y)n barrier layer: thickness is 1-2nm, 0 < y<1, Al doping content 4E+19-8E+19atom/cm
3;
The 2nd GaN barrier layer: thickness is 4-5nm.
The present invention has following beneficial effect:
The application is the interspersed AlGaN thin layer of having grown in the middle of GaN barrier layer.The energy gap of GaN and AlN is respectively 3.4eV and 6.2eV, is introducing after the new four layers of combining structure of luminescent layer, and experimental calculation obtains the energy gap of barrier layer and brings up to 3.7-4.1eV from 3.4eV.Larger like this restriction and the expansion effect of potential well to electronics that strengthened, the ability of raising quantum well bound electron, effectively hinders electron transfer in p-type GaN layer, and hole and electronics are obviously increased in the rate of radiative recombination of potential well; Finally strengthen internal quantum efficiency, increased luminous efficiency, improved brightness.
Except object described above, feature and advantage, the present invention also has other object, feature and advantage.Below with reference to figure, the present invention is further detailed explanation.
Brief description of the drawings
The accompanying drawing that forms the application's a part is used to provide a further understanding of the present invention, and schematic description and description of the present invention is used for explaining the present invention, does not form inappropriate limitation of the present invention.In the accompanying drawings:
Fig. 1 is comparative example's of the present invention structural representation;
Fig. 2 is the structural representation of the embodiment of the present invention;
Fig. 3 is comparative example's band structure figure;
Fig. 4 is the band structure figure of the embodiment of the present invention;
Wherein, 1, substrate, 2, low temperature buffer GaN layer, 3, non-Doped GaN layer, 4, mix the GaN layer of Si, 5, mix the GaN layer of Si, Al, 6, MQW active layer, 7, P type AlGaN layer, 8, P type GaN layer, 9, p-type contact layer, 10, InxGa
(1-x)n potential well layer, 11, a GaN barrier layer, 12, AlyGa
(1-y)n barrier layer, 13, the 2nd GaN barrier layer, 14, InGaN potential well layer, 15, GaN barrier layer.
Embodiment
Below in conjunction with accompanying drawing, embodiments of the invention are elaborated, but the multitude of different ways that the present invention can limit and cover according to claim is implemented.
Below explanation adopts the comparative example one who prepares sample 1 with existing conventional method respectively, and adopts growing method of the present invention to prepare the embodiment mono-of sample 2, then two kinds of methods is obtained to sample 1 and sample 2 carries out Performance Detection comparison.
Comparative example one,
Referring to Fig. 1, the present invention uses the MOCVD brightness GaN base LED epitaxial wafer that grows tall next life.Adopt high-purity H
2or high-purity N
2or high-purity H
2and high-purity N
2mist as carrier gas, high-purity N H
3as N source, metal organic source trimethyl gallium (TMGa) or triethyl-gallium (TEGa) are as gallium source, and trimethyl indium (TMIn) is as indium source, and N-type dopant is silane (SiH
4), trimethyl aluminium (TMAl) is as aluminium source, and P type dopant is two luxuriant magnesium (CP
2mg), substrate is (0001) surface sapphire, reaction pressure at 100mbar between 800mbar.
1,, at 1000-1100 DEG C, reaction chamber pressure maintains high-temperature process Sapphire Substrate 5-10 minute under the hydrogen atmosphere of 400-600torr;
2, atmosphere was the mist of hydrogen and nitrogen, is cooled at 530-580 DEG C, and reaction chamber pressure maintains 450-550torr, by 2-6 minute nitrogen treatment Sapphire Substrate; Then pass into TMGa, the low temperature buffer layer GaN that is 30-40nm at Grown on Sapphire Substrates thickness;
3, atmosphere is the mist of hydrogen and nitrogen, increases the temperature at 1050-1250 DEG C, and reaction chamber pressure maintains 100-250torr, passes into TMGa, continues the non-Doped GaN layer of growth 2.5-3.5 μ m;
4, atmosphere is nitrogen, or atmosphere is the mist of hydrogen and nitrogen, pressure 50-200torr, and temperature 900-1100 DEG C, passes into TMGa, TMAl and SiH
4, continuing growth N-type AlGaN layer, thickness is 40-60nm, Al doping content 2E+20-6E+20atom/cm
3, Si doping content 5E+17-9E+17atom/cm
3;
5, atmosphere is the mist of hydrogen and nitrogen, and reaction chamber pressure is 100-250torr, and temperature 1050-1250 DEG C passes into TEGa and SiH
4, growing n-type GaN layer, thickness is at 3.0-3.5um, and the doping content of Si is 4E+18-8E+18atom/cm
3;
6, (1) atmosphere is that nitrogen or nitrogen are mixed with a small amount of hydrogen, and pressure is 150-300torr, and temperature 730-760 DEG C passes into TEGa or TMGa and TMIn, continues growth InxGa
(1-x)n potential well layer, wherein 0<x<1, and the doping content of In remains unchanged, thickness 2.5-3.5nm, In doping content 2E+20-3E+20atom/cm
3; (2) temperature is upgraded to 840-890 DEG C, stops passing into TMIn, continues growing GaN barrier layer, thickness 10-13nm; (1) (2) layer cycling deposition periodicity is 10-13.
7, atmosphere is the mist of hydrogen and nitrogen, then increases the temperature to 850-1050 DEG C DEG C, and reaction chamber pressure maintains 50-200torr, passes into TMGa, TMAl and Cp
2mg, the P type AlGaN layer of lasting growth 30-60nm, the doping content 2E+20-6E+20atom/cm of Al
3, the doping content 5E+19-9E+19atom/cm of Mg
3;
8, atmosphere is the mist of hydrogen and nitrogen, and temperature is 850-1000 DEG C, and reaction chamber pressure maintains 100-250torr, passes into TMGa and Cp
2mg, the P type GaN layer of mixing magnesium of lasting growth 70-100nm, the doping content 2E+19-7E+19atom/cm of Mg
3;
9, atmosphere is the mist of hydrogen and nitrogen, pressure 100-250torr, and temperature 850-1000 DEG C, passes into TMGa and Cp
2mg, continues growing p-type contact layer pp layer, thickness 2-4nm, the doping content 7E+19-2E+20atom/cm of Mg
3;
10, atmosphere is nitrogen, and pressure is 50-200torr, temperature 670-730 DEG C, time 5-20min.Then in stove, be cooled to room temperature, can obtain the GaN base LED epitaxial wafer of epitaxial structure as shown in Figure 1.
Embodiment mono-,
Referring to Fig. 2, the present invention uses the AixtronMOCVD brightness GaN base LED epitaxial wafer that grows tall next life.Adopt high-purity H
2or high-purity N
2or high-purity H
2and high-purity N
2mist as carrier gas, high-purity N H
3as N source, metal organic source trimethyl gallium (TMGa), triethyl-gallium (TEGa) are as gallium source, and trimethyl indium (TMIn) is as indium source, and N-type dopant is silane (SiH
4), trimethyl aluminium (TMAl) is as aluminium source, and P type dopant is two luxuriant magnesium (CP
2mg), substrate is (0001) surface sapphire, reaction pressure at 100mbar between 800mbar.
A kind of LED epitaxial growth method of novel quantum well barrier layer, comprise that successively the GaN layer of Si is mixed in processing substrate, low temperature growth buffer GaN layer, the non-Doped GaN layer of growing, growth, grow active layer MQW, growing P-type AlInGaN layer, growth P-type GaN layer step, its mode of operation is:
1, Sapphire Substrate is positioned in MOCVD reative cell, maintains the H of 400-600torr in temperature at 1000-1100 DEG C, reaction chamber pressure
2under atmosphere, high-temperature process Sapphire Substrate 5-10 minute, as in Fig. 21 layer;
2, atmosphere is the mist of hydrogen and nitrogen, pressure 450-550torr, and at temperature 530-580 DEG C, time 2-6 minute, nitrogen treatment Sapphire Substrate; Then pass into TMGa at Grown on Sapphire Substrates low temperature buffer layer GaN layer, thickness 30-40nm; As in Fig. 22 layers;
3, atmosphere is the mixed gas of hydrogen and nitrogen, pressure 100-250torr, and temperature 1050-1250 DEG C, passes into TMGa, continues the non-Doped GaN layer of growth, and thickness 2.5-3.5um, as in Fig. 23 layers;
4, atmosphere is the mist of nitrogen or hydrogen and nitrogen, pressure 50-200torr, and temperature 900-1100 DEG C, passes into TMGa, TMAl and SiH4 and continues growing n-type AlGaN layer, and thickness is 40-60nm, the doping content 2E+20-6E+20atom/cm of Al
3, Si doping content 5E+17-9E+17atom/cm
3, as in Fig. 24 layers;
5, atmosphere is the mist of hydrogen and nitrogen, pressure 100-250torr, and temperature 1050-1250 DEG C, passes into TMGa and SiH4, continues growing n-type GaN layer, thickness 3.0-3.5um, the doping content 4E+18-8E+18atom/cm of Si
3; As in Fig. 25 layers;
6, (1) atmosphere is that nitrogen or nitrogen are mixed with a small amount of hydrogen, and pressure is 150-300torr, and temperature 730-760 DEG C passes into TEGa and TMIn, or passes into TMGa and TMIn, continues growth InxGa
(1-x)n potential well layer, wherein x<1, and the doping content of In remains unchanged, thickness 2.5-3.5nm, In doping content 2E+20-3E+20atom/cm
3; As in Fig. 2 10 layers;
(2) temperature is upgraded to 840-890 DEG C, stops passing into TMIn, continues growing GaN barrier layer, thickness 4-5nm; As in Fig. 2 11 layers;
(3) pass into TMAl, continue growth AlyGa
(1-y)n barrier layer, wherein y<1, and the doping content of Al remains unchanged, thickness 1-2nm, Al doping content 4E+19-8E+19atom/cm
3; As in Fig. 2 12 layers;
(4) temperature is upgraded to 840-890 DEG C, stops passing into TMAl, continues growing GaN barrier layer, thickness 4-5nm; As in Fig. 2 13 layers.
(1) (2) (3) (4) layer cycling deposition periodicity is 10-13.As in Fig. 26 layers.
7, atmosphere is the mist of nitrogen or hydrogen and nitrogen, pressure 50-200torr, and temperature 850-1050 DEG C, passes into TMGa, TMAl and Cp
2mg, continues growing p-type AlGaN layer, thick end 30-60nm, the doping content 2E+20-6E+20atom/cm of Al
3, the doping content 5E+19-9E+19atom/cm of Mg
3; As in Fig. 27 layers.
8, atmosphere is the mist of hydrogen and nitrogen, pressure 100-250torr, and temperature 850-1000 DEG C, passes into TMGa and Cp2Mg, continues growing p-type GaN layer, thickness 70-100nm, the doping content 2E+19-7E+19atom/cm of Mg
3; As in Fig. 28 layers.
9, atmosphere is the mist of hydrogen and nitrogen, pressure 100-250torr, and temperature 850-1000 DEG C, passes into TMGa and Cp2Mg, continues growing p-type contact layer pp layer, thickness 2-4nm, Mg doping content 7E+19-2E+20atom/cm
3; As in Fig. 29 layers.
10, atmosphere is nitrogen, and pressure is 50-200torr, temperature 670-730 DEG C, time 5-20min.Then in stove, be cooled to room temperature, can obtain the GaN base LED epitaxial wafer of epitaxial structure as shown in Figure 2.
Then, the method that adopts comparative example one to describe is prepared sample 1, and the method that adopts embodiment mono-to describe is prepared sample 2; Sample 1 and the sample 2 outer layer growth parameter differences active layer MQW that is to grow, the parameter of other epitaxial loayer of growing is just the same.Design parameter please refer to table one.
The outer layer growth parameter comparison of table 1 sample 1 and sample 2
Sample 1 and sample 2 plate ITO layer 100nm under identical front process conditions, plate Cr/Pt/Au electrode 70nm under identical condition, plating SiO under identical condition
2about 30nm, then sample grinding and cutting is become to the chip particle of 762 μ m*762 μ m (30mi*30mil) under identical condition, then sample 1 and sample 2 are selected 150 crystal grain separately in same position, under identical packaging technology, are packaged into white light LEDs.Then adopt integrating sphere under drive current 350mA condition, to test the photoelectric properties of sample 1 and sample 2.
The band structure figure of sample 1 and sample 2 is referring to Fig. 3 and Fig. 4, and in two figure, top solid line is GaN conduction level, and dashed middle line is GaN Fermi level, and below solid line is GaN valence-band level.As can be seen from Figure 3, the GaN barrier layer 15 of sample 1 has formed peak on the basis of InGaN gesture hydrazine layer 14; And in Fig. 4, a GaN barrier layer 11 of sample 2 and the 2nd GaN barrier layer 13 are at InxGa
(1-x)on the basis of N potential well layer 10, form peak, and AlyGa
(1-y)n barrier layer 12 has formed again a peak on the basis of a GaN barrier layer 11 and the 2nd GaN barrier layer 13.
It is large that the energy gap of barrier layer becomes, and can strengthen the restriction of potential well layer to free electron, effectively stops free electron to move to participate in p-type GaN layer invalid compound, and hole and electronics are obviously increased at the radiation recombination efficiency of potential well, finally improved brightness.
The photoelectric properties data analysis contrast that integrating sphere is obtained, contrast, in table 1, show that from table sample 2 promotes 8-9% compared with sample 1 light efficiency, voltage phase difference is little.
Table 1
| ? | Type | Average voltage | Mean flow rate |
[0078]?
| Sample 1 | Tradition quantum well | 3.17V | 364mw |
| Sample 2 | The quantum well that this patent provides | 3.18V | 397mw |
Referring to Fig. 2, the present invention also provides a kind of LED epitaxial loayer making according to the LED epitaxial growth method of above-mentioned novel quantum well barrier layer, comprises successively substrate 1, low temperature buffer GaN layer 2, non-Doped GaN layer 3, the GaN layer 4 of mixing Si, the GaN layer 5 of mixing Si, Al, MQW active layer 6, P type AlGaN layer 7, P type GaN layer 8 and p-type contact layer 9;
Wherein, described MQW active layer 6 comprises 10-13 four layers of combination, and the structure of described four layers of combination comprises from bottom to up successively:
InxGa
(1-x)n potential well layer 10: thickness is 2.5-3.5nm, 0 < x<1, the doping content 2E+20-3E+20atom/cm of In
3;
The one GaN barrier layer 11: thickness is 4-5nm;
AlyGa
(1-y)n barrier layer 12: thickness is 1-2nm, 0 < y<1, Al doping content 4E+19-8E+19atom/cm
3;
The 2nd GaN barrier layer 13: thickness is 4-5nm.
The foregoing is only the preferred embodiments of the present invention, be not limited to the present invention, for a person skilled in the art, the present invention can have various modifications and variations.Within the spirit and principles in the present invention all, any amendment of doing, be equal to replacement, improvement etc., within all should being included in protection scope of the present invention.
Claims (7)
1. the LED epitaxial growth method of a novel quantum well barrier layer, comprise successively and process substrate, low temperature growth buffer GaN layer, the non-Doped GaN layer of growing, growing n-type AlGaN layer, growing n-type GaN layer, growth active layer MQW, growing P-type AlGaN layer, growth P-type GaN layer, growing p-type contact layer step, it is characterized in that
The step of described growth active layer mqw layer is:
A, be nitrogen in atmosphere, or atmosphere is in the reative cell of nitrogen and hydrogen gas mixture, pressure is 150-300torr, temperature 730-760 DEG C, pass into the mixture of triethyl-gallium and trimethyl indium or pass into trimethyl gallium and the mixture of trimethyl indium, continue growth InxGa
(1-x)n potential well layer, wherein 0 < x<1, the doping content 2E+20-3E+20atom/cm of In
3, InxGa
(1-x)the thickness of N potential well layer is 2.5-3.5nm;
B, temperature are upgraded to 840-890 DEG C, stop passing into trimethyl indium, continue growing GaN barrier layer, and thickness is 4-5nm;
C, pass into trimethyl aluminium, continue growth AlyGa
(1-y)n barrier layer, wherein 0 < y<1, AlyGa
(1-y)the thickness of N barrier layer is 1-2nm, Al doping content 4E+19-8E+19atom/cm
3;
D, temperature are upgraded to 840-890 DEG C, stop passing into trimethyl aluminium, continue growing GaN barrier layer, and thickness is 4-5nm;
The circulating cycle issue of A, B, C, D step is 10-13.
2. the LED epitaxial growth method of a kind of novel quantum well barrier layer according to claim 1, is characterized in that, comprises growing n-type AlGaN layer before the step of described growth active layer mqw layer:
Be nitrogen in atmosphere, or atmosphere is in the reative cell of nitrogen and hydrogen gas mixture, pressure is 50-200torr, temperature 900-1100 DEG C, passes into trimethyl gallium, trimethyl aluminium and silane, continues growing n-type AlGaN layer, thickness is 40-60nm, and the doping content of Al is 2E+20-6E+20atom/cm
3, the doping content of Si is 5E+17-9E+17atom/cm
3.
3. the LED epitaxial growth method of a kind of novel quantum well barrier layer according to claim 1, is characterized in that, comprises growing n-type GaN layer before the step of described growth active layer mqw layer:
In atmosphere is the reative cell of nitrogen and hydrogen gas mixture, pressure is 100-250torr, and temperature 1050-1250 DEG C passes into trimethyl gallium and silane, continues growing n-type GaN layer, and thickness is 3.0-3.5um, and the doping content of Si is 4E+18-8E+18atom/cm
3.
4. the LED epitaxial growth method of a kind of novel quantum well barrier layer according to claim 1, is characterized in that, comprises growing p-type AlGaN layer after the step of described growth active layer mqw layer:
Be nitrogen in atmosphere, or atmosphere is in the reative cell of nitrogen and hydrogen gas mixture, pressure is 50-200torr, temperature 850-1050 DEG C, pass into trimethyl gallium, trimethyl aluminium and two luxuriant magnesium, continue growing p-type AlGaN layer, thickness is 30-60nm, and the doping content of Al is 2E+20-6E+20atom/cm
3, the doping content of Mg is 5E+19-9E+19atom/cm
3.
5. the LED epitaxial growth method of a kind of novel quantum well barrier layer according to claim 1, is characterized in that, comprises growing p-type GaN layer after the step of described growth active layer mqw layer:
In atmosphere is the reative cell of nitrogen and hydrogen gas mixture, pressure is 100-250torr, and temperature 850-1000 DEG C passes into trimethyl gallium and two luxuriant magnesium, continues growing p-type GaN layer, and thickness is 70-100nm, and the doping content of Mg is 2E+19-7E+19atom/cm
3.
6. the LED epitaxial growth method of a kind of novel quantum well barrier layer according to claim 1, is characterized in that, comprises growing p-type contact layer after the step of described growth active layer mqw layer:
In atmosphere is the reative cell of nitrogen and hydrogen gas mixture, pressure is 100-250torr, and temperature 850-1000 DEG C passes into trimethyl gallium and two luxuriant magnesium, continues growing p-type contact layer, and thickness is 2-4nm, and the doping content of Mg is 7E+19-2E+20atom/cm
3.
7. the LED epitaxial loayer making according to the LED epitaxial growth method of the novel quantum well barrier layer described in claim 1-6 any one, is characterized in that, described active layer MQW comprises 10-13 four layers of combination, and the structure of described four layers of combination comprises from bottom to up successively:
InxGa
(1-x)n potential well layer: thickness is 2.5-3.5nm, 0 < x<1, the doping content 2E+20-3E+20atom/cm of In
3;
The one GaN barrier layer: thickness is 4-5nm;
AlyGa
(1-y)n barrier layer: thickness is 1-2nm, 0 < y<1, Al doping content 4E+19-8E+19atom/cm
3;
The 2nd GaN barrier layer: thickness is 4-5nm.
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