CN103346219B - The growing method of compound multiple quantum well light emitting Rotating fields and LED epitaxial structure - Google Patents
The growing method of compound multiple quantum well light emitting Rotating fields and LED epitaxial structure Download PDFInfo
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Abstract
The invention provides a kind of growing method of compound multiple quantum well light emitting Rotating fields and corresponding LED epitaxial structure, the trap luminescent layer of described epitaxial structure comprises 6-8 elementary layer, and each elementary layer comprises from bottom to up successively: the first well layer, the second well layer, the first layer of heap of stone, the first well layer, the second well layer, the second layer of heap of stone.The present invention adopts compound Multiple Quantum Well to improve traditional Multiple Quantum Well due to trap and builds the situation that wave function that ply stress causes is separated, and improves traditional Multiple Quantum Well due to the wide situation causing well layer hole concentration too low of heap of stone; The Internal Quantum trap efficiency improving LED chip obtains, and macroscopically improves the brightness of small-medium size Led chip, improves the light efficiency of large scale Led chip.
Description
Technical field
The present invention relates to LED epitaxial scheme technical field, especially, relate to a kind of growing method of compound multiple quantum well light emitting Rotating fields and corresponding LED epitaxial structure.
Background technology
On LED market, the high-power specification 30mil*30mi chip of street lighting many uses large scale, back light many uses small-medium size 12mil*28mil standard chip, product quality height is all relevant to chip brightness.Therefore, the brightness of various sizes chip then becomes the focal point of encapsulation client.
Current raising large scale light efficiency and small-medium size brightness have a variety of epitaxial growth method at present, and most of structure innovation is P-type layer, such as:
(1) extended capability that the structure that P layer increases the superlattice such as PAlGaN/PInGaN, PAlGaN/PGaN, PAlGaN/GaN improves electric current reaches the object improving brightness;
(2) doping way etc. changing P layer Mg improves the ionization rate of Mg, improves hole concentration and reaches the object improving light efficiency and brightness.
Summary of the invention
The object of the invention is to provide a kind of growing method of compound multiple quantum well light emitting Rotating fields and corresponding LED epitaxial structure, to solve the technical problem of current LED chip luminance shortage.
For achieving the above object, the invention provides a kind of growing method of compound multiple quantum well light emitting Rotating fields, comprise following step:
A, control at 710-750 DEG C by temperature, chamber pressure controls at 300-400mbar, and the flow passing into In is the In of 1500-1700sccm, the 2.7-3.5nm of grow doping In
xga
(1-x)n well layer, x=0.20-0.22;
B, maintenance temperature and pressure are constant, and the flow passing into In is the In of 300-450sccm, the 0.5-1.0nm of grow doping In
zga
(1-z)n well layer, z=0.04-0.08,
C, maintenance pressure are constant, and be warming up to 810-840 DEG C, the flow passing into Al is 30-50sccm, and the flow passing into In is 800-1000sccm, the growth doped with Al of 4-6nm, the Al of In
x1in
x2ga
(1-x1-x2)n builds layer, x
1=0.04-0.05, x
2=0.10-0.12;
D, repetition steps A, B;
E, maintenance pressure are constant, and the GaN being warming up to 810-840 DEG C of growth 10-12nm builds layer;
F, repeat steps A, B, C, D, E6-8 time, until the general thickness of trap luminescent layer reaches 162-216nm.
Preferably, step is comprised before described steps A:
Under the hydrogen atmosphere of S1,1000-1100 DEG C, chamber pressure is 150-200mbar, process Sapphire Substrate 4-5 minute;
S2, be cooled to 540-570 DEG C, chamber pressure controls at 450-600mbar, and growth thickness is the low temperature buffer layer GaN of 30-50nm on a sapphire substrate;
S3, increase the temperature to 950-1050 DEG C, chamber pressure controls at 450-600mbar, the GaN that undopes of continued propagation 2.5-3.0um;
S4, keep temperature-resistant, chamber pressure controls at 200-400mbar, then the N-type GaN of continued propagation 3.5-4.5 μm of doping Si, and the doping content of Si controls at 8E18-1E19atom/cm
3.
Preferably, step is comprised after described step F:
D1, increase the temperature to 900-950 DEG C, chamber pressure controls at 150-300mbar, and continued propagation 30-40nm mixes the P type In of Al, In
yal
(1-y)gaN layer, y=0.08-0.12;
D2, increase the temperature to 1000-1100 DEG C, chamber pressure controls at 200-600mbar, and continued propagation 60-90nm mixes the P type GaN layer of Mg, and the doping content of Mg controls at 3E18-4E18atom/cm
3;
D3, be cooled to 650-700 DEG C, after insulation 20-30min, cooling in stove.
The invention also discloses a kind of LED epitaxial structure, the trap luminescent layer of described LED epitaxial structure comprises 6-8 elementary layer, and each elementary layer comprises from bottom to up successively:
First well layer, described first well layer is the In of doping 2.7-3.5nmIn
xga
(1-x)n well layer, x=0.20-0.22;
Second well layer, described second well layer is the In of doping 0.5-1.0nmIn
zga
(1-z)n well layer, z=0.04-0.08;
First layer of heap of stone, the described first layer of heap of stone is the Al of Al, In of doping 4-6nm
x1in
x2ga
(1-x1-x2)n builds layer, x
1=0.04-0.05, x
2=0.10-0.12;
First well layer, described first well layer is the In of doping 2.7-3.5nmIn
xga
(1-x)n well layer, x=0.20-0.22;
Second well layer, described second well layer is the In of doping 0.5-1.0nmIn
zga
(1-z)n well layer, z=0.04-0.08;
Second layer of heap of stone, the described second layer of heap of stone is that the GaN of 10-12nm builds layer.
Preferably, comprise successively from bottom to up under described elementary layer:
Low temperature buffer GaN layer, thickness is 30-50nm;
Undope GaN layer, and thickness is 2.5-3.0um;
N-type GaN layer, thickness is 3.5-4.5 μm, the doping content control 8E18-1E19atom/cm of doping Si, Si
3.
Preferably, comprise successively from bottom to up on described elementary layer:
P type AlGaN layer, thickness is the P type In of 30-40nm
yal
(1-y)gaN layer, y=0.08-0.12;
P type GaN layer, thickness is 60-90nm, doped with Mg, the doping content control 3E18-4E18atom/cm of Mg
3.
The present invention has following beneficial effect:
1, increase the light extraction efficiency in unit are: the lattice of traditional multiple quantum well layer and layer of heap of stone do not mate and layer of heap of stone thicker, cause there is polarization, compression stress, microcosmic cause well layer electronics be separated with the wave function in hole, electronics and hole-recombination efficiency poor, the number of photons produced in unit interval unit are is less; And the elementary layer structure that the present invention sets out, transition zone (multiple compound well layer) is made to adjust the Lattice Matching of InGaN and GaN, stress between well layer and layer of heap of stone is diminished, and the wave function in electronics and hole is more concentrated, increases the probability of recombination in electronics and hole.
2, increase the hole concentration of well layer: the thickness that traditional Multiple Quantum Well builds layer is about 10-12nm, because potential barrier is wider, be restricted in the propagation of traditional Multiple Quantum Well by P layer injected holes; And the present invention first build layer be AlInGaN quaternary growth, the lattice of lattice close to well layer of layer of heap of stone is made by the component adjusting Al and In, reduce the impact of layer of heap of stone on well layer stress, the THICKNESS CONTROL of the first layer of heap of stone is at 4-6nm, less than tradition layer thickness of heap of stone, be conducive to the propagation of P layer injected hole in compound quantum well, increase the hole concentration of the first well layer and the second well layer.
The compound multiple quantum well layer of the present invention improves traditional Multiple Quantum Well due to trap and builds the situation that wave function that ply stress causes is separated, and improves traditional Multiple Quantum Well due to the wide situation causing well layer hole concentration too low of heap of stone.By above improvement, the Internal Quantum trap efficiency of LED chip gets a promotion, and objectively improves the brightness of small-medium size, improves large-sized light efficiency.
Except object described above, feature and advantage, the present invention also has other object, feature and advantage.Below with reference to figure, the present invention is further detailed explanation.
Accompanying drawing explanation
The accompanying drawing forming a application's part is used to provide a further understanding of the present invention, and schematic description and description of the present invention, for explaining the present invention, does not form inappropriate limitation of the present invention.In the accompanying drawings:
Fig. 1 is the structural representation of existing LED epitaxial structure;
Fig. 2 is the structural representation of the LED epitaxial structure of the preferred embodiment of the present invention;
Fig. 3 is the band structure schematic diagram of existing LED epitaxial structure; Figure (a) is conduction level schematic diagram; Figure (b) is valence-band level schematic diagram;
Fig. 4 is the band structure schematic diagram of the preferred embodiment of the present invention; Figure (a) is conduction level schematic diagram; Figure (b) is valence-band level schematic diagram;
Fig. 5 is the photoelectric properties data point comparison diagram of sample 1 and sample 2;
Fig. 6 is the photoelectric properties data point comparison diagram of sample 3 and sample 4;
Wherein, 1, P type GaN layer; 2, P type InAlGaN layer, 3-1, Multiple-quantum build layer, 3-2, multiple quantum well layer, and 4, N-type GaN, 5, U-shaped GaN; 3-A, the first well layer, 3-B, the second well layer, 3-C, the first layer of heap of stone, 3-D, the second layer of heap of stone; 6, P type AlGaN layer, 7, low temperature buffer GaN layer, 8, undope GaN layer.
Embodiment
Below in conjunction with accompanying drawing, embodiments of the invention are described in detail, but the multitude of different ways that the present invention can limit according to claim and cover is implemented.
The comparative example one adopting and to prepare sample 1 with existing conventional method is below described respectively, and growing method of the present invention prepares the embodiment one of sample 2, then two kinds of methods are obtained sample 1 and sample 2 and carry out Performance Detection and compare.
Comparative example one,
1,1000-1100 DEG C hydrogen atmosphere under, chamber pressure controls at 150-200mbar, high-temperature process Sapphire Substrate 4-5 minute;
2, at being cooled to 540-570 DEG C, chamber pressure controls at 450-600mbar, and growth thickness is the low temperature buffer layer GaN of 30-50nm on a sapphire substrate;
3, at increasing the temperature to 950-1050 DEG C, chamber pressure controls at 450-600mbar, the GaN that undopes of continued propagation 2.5-3.0um;
4, keep temperature-resistant, chamber pressure controls at 200-400mbar, then grows the N-type GaN of 3.5-4.5 μm of lasting doped silicon;
5, be cooled to 710-840 DEG C, chamber pressure controls at 300-400mbar, growth periodicity growth multiple quantum well light emitting layer, monocycle growing method: (1) is cooled to the In of the 2.7-3.5nm of 710-750 DEG C of grow doping In
xga
(1-x)n (x=0.20-0.22) well layer, (2) GaN being warming up to 810-840 DEG C of growth 10-12nm builds layer, then with (1) (2) for one-period carries out repeated growth, repeated growth periodicity is 13-15, and general thickness controls at 165-233nm;
6, increase the temperature to 900-950 DEG C again, chamber pressure controls at 150-300mbar, and continued propagation 30-40nm mixes the P type In of indium, aluminium
yal
(1-y)gaN layer, y=0.08-0.12;
7, increase the temperature to 1000-1100 DEG C again, chamber pressure controls at 200-600mbar, and continued propagation 60-90nm mixes the P type GaN layer of magnesium;
8, be finally cooled to 650-700 DEG C, insulation 20-30min, then cooling in stove, obtains sample 1.
Embodiment one,
The present invention uses long high brightness GaN-based LED in AixtronCruisIIMOCVD next life.Adopt high-purity H
2or high-purity N
2or high-purity H
2and high-purity N
2mist as carrier gas, high-purity N H3 as N source, trimethyl gallium (TMGa) and triethyl-gallium (TEGa) as gallium source, trimethyl indium (TMIn) as indium source, silane (SiH
4) as N-type dopant, trimethyl aluminium (TMAl) as aluminium source, two luxuriant magnesium (CP
2mg) as P-type dopant, substrate is (0001) surface sapphire, and chamber pressure is between 150mbar to 600mbar.
1,1000-1100 DEG C hydrogen atmosphere under, chamber pressure controls at 150-200mbar, high-temperature process Sapphire Substrate 4-5 minute;
2, at being cooled to 540-570 DEG C, chamber pressure controls at 450-600mbar, and growth thickness is the low temperature buffer layer GaN of 30-50nm on a sapphire substrate;
3, at increasing the temperature to 950-1050 DEG C, chamber pressure controls at 450-600mbar, the GaN that undopes of continued propagation 2.5-3.0um;
4, keep temperature-resistant, chamber pressure controls at 200-400mbar, then grows the N-type GaN of 3.5-4.5 μm of lasting doped silicon;
5, be cooled to 710-840 DEG C, chamber pressure controls at 300-400mbar, growth periodicity growth multiple quantum well light emitting layer, monocycle growing method:
(1) 710-750 DEG C is cooled to, the In of the 2.7-3.5nm of grow doping In
xga
(1-x)n well layer, x=0.20-0.22;
(2) keep temperature and pressure constant, by changing the flow of indium, the In of the 0.5-1.0nm of grow doping In
zga
(1-z)n well layer, z=0.04-0.08;
(3) keep pressure constant, be warming up to 810-840 DEG C of the growth adulterated al of 4-6nm, the Al of indium
x1in
x2ga
(1-x1-x2)n builds layer, x
1=0.04-0.05, x
2=0.10-0.12;
(4) keep pressure constant, be cooled to the In of the 2.7-3.5nm of 710-750 DEG C of grow doping In
xga
(1-x)n well layer, x=0.20-0.22;
(5) keep temperature and pressure constant, by changing the flow of indium, the In of the 0.5-1.0nm of grow doping In
zga
(1-z)n (z=0.04-0.08) well layer;
(6) keep pressure constant, the GaN being warming up to 810-840 DEG C of growth 10-12nm builds layer;
Then with (1) (2) (3) (4) (5) (6) for one-period carries out repeated growth, repeated growth periodicity is 6-8, and general thickness controls at 162-216nm;
6, increase the temperature to 900-950 DEG C again, chamber pressure controls at 150-300mbar, and continued propagation 30-40nm mixes the P type In of indium, aluminium
yal
(1-y)gaN layer, y=0.08-0.12;
7, increase the temperature to 1000-1100 DEG C again, chamber pressure controls at 200-600mbar, and continued propagation 60-90nm mixes the P type GaN layer of magnesium;
8, be finally cooled to 650-700 DEG C, insulation 20-30min, then cooling in stove, obtains sample 2.
Comparative example one contrasts with the growth parameter(s) of embodiment one can see the following form 1.
Table 1 comparative example one contrasts with the growth parameter(s) of embodiment one
Illustrate: in table 1-represent nothing
See Fig. 1, the multiple quantum well layer 3-1 in the sample 1 that conventional method obtains and Multiple-quantum build layer 3-2.See Fig. 2, in the sample 2 that the inventive method obtains, become the compound multiple quantum well layer be made up of the first well layer 3-A, the second well layer 3-B, the first layer 3-C, the first well layer 3-A of heap of stone, the second well layer 3-B, the second overlapping coincidence of layer 3-D of heap of stone.See Fig. 3 and Fig. 4, the difference of both structures makes sample produce corresponding multiple trap energy level, increases the concentration of hole and electronics, mainly reduces the escape of electronics, increase the concentration in hole, improve combined efficiency; Further, multiple trap energy level makes the wave function in electronics and hole more close at the central point that K is spatially respective, increases the probability of recombination in electronics and hole.
As can be seen from Fig. 3, the multiple quantum well layer 3-1 of sample 1 and Multiple-quantum build layer 3-2 respectively corresponding A point and the conduction level position indicated by B point in figure (a), corresponding A respectively in figure (b) ' point and B ' put indicated by valence-band level position.
As can be seen from Fig. 4, first well layer 3-A, the second well layer 3-B of sample 2, first layer 3-C, the first well layer 3-A conduction level position in figure (a) respectively indicated by corresponding A point, B point, C point, D point of heap of stone, corresponding A respectively in figure (b) ' point, B ' point, C ' point, D ' put indicated by valence-band level position.
Then, obtained sample 1 and sample 2 are plated ITO layer 150-200nm under process conditions before identical, plates Cr/Pt/Au electrode 130-150nm under identical condition, plating SiO under identical condition
240-50nm, then at identical conditions sample grinding and cutting is become the chip particle of 305 μm * 711 μm (12mi*28mil), then sample 1 and sample 2 select 150 crystal grain separately in same position, under identical packaging technology, are packaged into white light LEDs.Then adopt integrating sphere under drive current 350mA condition, test the photoelectric properties of sample 1 and sample 2, the parameter obtained is shown in Fig. 5.
The ordinate of Fig. 5 is light efficiency (1m/w), and abscissa is chip distribution of particles number.The numerical value of sample 2 correspondence is the thicker lines in top, and the numerical value of sample 1 correspondence is the thinner lines in below.Sample 2 comparatively sample 1 light efficiency lifting 6-7% is drawn from Fig. 5 data.The growing method that this patent provides improves the light efficiency of large size chip.
Comparative example two,
Implementation step, see comparative example one, obtains sample 3.
Embodiment two,
Implementation step, see embodiment one, obtains sample 4.
Comparative example two contrasts with the growth parameter(s) of embodiment two can see the following form 2.
Table 2 comparative example two contrasts with the growth parameter(s) of embodiment two
Then, test the photoelectric properties of sample 3 and sample 4 after sample 3 and sample 4 are taked the processing method same with sample 1 and sample 2, the parameter obtained is shown in Fig. 6.The ordinate of Fig. 6 is brightness (Lm), and abscissa is chip distribution of particles number.The numerical value of sample 4 correspondence is the thicker lines in top, and the numerical value of sample 3 correspondence is the thinner lines in below.Sample 4 comparatively sample 3 luminance raising 8-9% is drawn from Fig. 6 data.The growing method that this patent provides improves the light efficiency of large size chip.
See Fig. 2, the invention also discloses the LED epitaxial structure that a kind of growing method according to above-mentioned compound multiple quantum well light emitting Rotating fields is obtained, the trap luminescent layer of described LED epitaxial structure comprises 6-8 elementary layer, and each elementary layer comprises from bottom to up successively:
First well layer 3-A, described first well layer 3-A are the In of doping 2.7-3.5nmIn
xga
(1-x)n well layer, x=0.20-0.22;
Second well layer 3-B, described second well layer 3-B are the In of doping 0.5-1.0nmIn
zga
(1-z)n well layer, z=0.04-0.08;
First layer 3-C of heap of stone, the described first layer 3-C of heap of stone are the Al of Al, In of doping 4-6nm
x1in
x2Ga
(1-x1-x2)n builds layer, x
1=0.04-0.05, x
2=0.10-0.12;
First well layer 3-A, described first well layer 3-A are the In of doping 2.7-3.5nmIn
xga
(1-x)n well layer, x=0.20-0.22;
Second well layer 3-B, described second well layer 3-B are the In of doping 0.5-1.0nmIn
zga
(1-z)n well layer, z=0.04-0.08;
Second layer 3-D of heap of stone, the described second layer 3-D of heap of stone are that the GaN of 10-12nm builds layer.
In addition, also can comprise successively from bottom to up under said units layer:
Low temperature buffer GaN layer 7, thickness is 30-50nm; This layer is the nucleating layer at grown on substrates, for the GaN growth that undopes provides the nuclear island of the one-tenth required for crystal growth, becomes nuclear island further growth to become crystal;
Undope GaN layer 8, and thickness is 2.5-3.0um; The growth of GaN of undoping is on nucleating layer basis, the crystal becoming nuclear island constantly to grow complete merging to become complete;
N-type GaN layer 4, thickness is 3.5-4.5 μm, the doping content control 8E18-1E19atom/cm of doping Si, Si
3.
Also can comprise successively from bottom to up on described elementary layer:
P type AlGaN layer 6, thickness is the P type In of 30-40nm
yal
(1-y)gaN layer, y=0.08-0.12;
P type GaN layer 1, thickness is 60-90nm, doped with Mg, the doping content control 3E18-4E18atom/cm of Mg
3.
The foregoing is only the preferred embodiments of the present invention, be not limited to the present invention, for a person skilled in the art, the present invention can have various modifications and variations.Within the spirit and principles in the present invention all, any amendment done, equivalent replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (6)
1. a growing method for compound multiple quantum well light emitting Rotating fields, is characterized in that, comprises following step:
A, control at 710-750 DEG C by temperature, chamber pressure controls at 300-400mbar, and the flow passing into In is the In of 1500-1700sccm, the 2.7-3.5nm of grow doping In
xga
(1-x)n well layer, x=0.20-0.22;
B, maintenance temperature and pressure are constant, and the flow passing into In is the In of 300-450sccm, the 0.5-1.0nm of grow doping In
zga
(1-z)n well layer, z=0.04-0.08,
C, maintenance pressure are constant, and be warming up to 810-840 DEG C, the flow passing into Al is 30-50sccm, and the flow passing into In is 800-1000sccm, the growth doped with Al of 4-6nm, the Al of In
x1in
x2ga
(1-x1-x2)n builds layer, x
1=0.04-0.05, x
2=0.10-0.12;
D, repetition steps A, B;
E, maintenance pressure are constant, and the GaN being warming up to 810-840 DEG C of growth 10-12nm builds layer;
F, repeat steps A, B, C, D, E6-8 time, until the general thickness of trap luminescent layer reaches 162-216nm.
2. the growing method of a kind of compound multiple quantum well light emitting Rotating fields according to claim 1, is characterized in that, comprise step before described steps A:
Under the hydrogen atmosphere of S1,1000-1100 DEG C, chamber pressure is 150-200mbar, process Sapphire Substrate 4-5 minute;
S2, be cooled to 540-570 DEG C, chamber pressure controls at 450-600mbar, and growth thickness is the low temperature buffer layer GaN of 30-50nm on a sapphire substrate;
S3, increase the temperature to 950-1050 DEG C, chamber pressure controls at 450-600mbar, the GaN that undopes of continued propagation 2.5-3.0um;
S4, keep temperature-resistant, chamber pressure controls at 200-400mbar, then the N-type GaN of continued propagation 3.5-4.5 μm of doping Si, and the doping content of Si controls at 8E18-1E19atom/cm
3.
3. the growing method of a kind of compound multiple quantum well light emitting Rotating fields according to claim 1, is characterized in that, comprise step after described step F:
D1, increase the temperature to 900-950 DEG C, chamber pressure controls at 150-300mbar, and continued propagation 30-40nm mixes the P type In of Al, In
yal
(1-y)gaN layer, y=0.08-0.12;
D2, increase the temperature to 1000-1100 DEG C, chamber pressure controls at 200-600mbar, and continued propagation 60-90nm mixes the P type GaN layer of Mg, and the doping content of Mg controls at 3E18-4E18atom/cm
3;
D3, be cooled to 650-700 DEG C, after insulation 20-30min, cooling in stove.
4. a LED epitaxial structure, is characterized in that, the trap luminescent layer of described LED epitaxial structure comprises 6-8 elementary layer, and each elementary layer comprises from bottom to up successively:
First well layer, described first well layer is the In of doping 2.7-3.5nmIn
xga
(1-x)n well layer, x=0.20-0.22;
Second well layer, described second well layer is the In of doping 0.5-1.0nmIn
zga
(1-z)n well layer, z=0.04-0.08;
First layer of heap of stone, the described first layer of heap of stone is the Al of Al, In of doping 4-6nm
x1in
x2ga
(1-x1-x2)n builds layer, x
1=0.04-0.05, x
2=0.10-0.12;
First well layer, described first well layer is the In of doping 2.7-3.5nmIn
xga
(1-x)n well layer, x=0.20-0.22;
Second well layer, described second well layer is the In of doping 0.5-1.0nmIn
zga
(1-z)n well layer, z=0.04-0.08;
Second layer of heap of stone, the described second layer of heap of stone is that the GaN of 10-12nm builds layer.
5. a kind of LED epitaxial structure according to claim 4, is characterized in that, comprises successively from bottom to up under described elementary layer:
Low temperature buffer GaN layer, thickness is 30-50nm;
Undope GaN layer, and thickness is 2.5-3.0um;
N-type GaN layer, thickness is 3.5-4.5 μm, the doping content control 8E18-1E19atom/cm of doping Si, Si
3.
6. a kind of LED epitaxial structure according to claim 4, is characterized in that, comprises successively from bottom to up on described elementary layer:
P type A1GaN layer, thickness is the P type In of 30-40nm
yal
(1-y)gaN layer, y=0.08-0.12;
P type GaN layer, thickness is 60-90nm, doped with Mg, the doping content control 3E18-4E18atom/cm of Mg
3.
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| CN103952684B (en) * | 2014-04-23 | 2016-04-20 | 湘能华磊光电股份有限公司 | LED outer layer growth method and LED epitaxial film |
| CN104966767B (en) * | 2015-03-30 | 2018-01-09 | 华灿光电(苏州）有限公司 | A kind of growing method of GaN base light emitting epitaxial wafer |
| CN111834498B (en) * | 2019-04-19 | 2022-01-25 | 开发晶照明（厦门）有限公司 | Epitaxial light-emitting structure of light-emitting diode |
| CN111312867B (en) * | 2020-02-21 | 2023-12-15 | 湘能华磊光电股份有限公司 | Preparation method of single-chip white light LED |
| CN115050866B (en) * | 2022-08-16 | 2022-11-08 | 江苏第三代半导体研究院有限公司 | Polarization-controllable quantum dot Micro-LED homoepitaxial structure and preparation method thereof |
| CN115377259B (en) * | 2022-10-26 | 2023-01-31 | 江西兆驰半导体有限公司 | Light emitting diode epitaxial wafer, preparation method thereof and light emitting diode |
Citations (2)
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| CN104409587A (en) * | 2014-10-22 | 2015-03-11 | 太原理工大学 | An InGaN-based blue-green light-emitting diode epitaxial structure and growth method |
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| CN104409587A (en) * | 2014-10-22 | 2015-03-11 | 太原理工大学 | An InGaN-based blue-green light-emitting diode epitaxial structure and growth method |
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