CN104409587A - An InGaN-based blue-green light-emitting diode epitaxial structure and growth method - Google Patents
An InGaN-based blue-green light-emitting diode epitaxial structure and growth method Download PDFInfo
- Publication number
- CN104409587A CN104409587A CN201410565126.3A CN201410565126A CN104409587A CN 104409587 A CN104409587 A CN 104409587A CN 201410565126 A CN201410565126 A CN 201410565126A CN 104409587 A CN104409587 A CN 104409587A
- Authority
- CN
- China
- Prior art keywords
- ingan
- layer
- growth
- temperature
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 23
- 239000012298 atmosphere Substances 0.000 claims abstract description 22
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 238000000137 annealing Methods 0.000 claims abstract description 16
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 9
- 239000010980 sapphire Substances 0.000 claims abstract description 9
- 229910021529 ammonia Inorganic materials 0.000 claims abstract description 6
- 230000008569 process Effects 0.000 claims abstract description 6
- 230000004888 barrier function Effects 0.000 claims description 30
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 17
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 17
- 239000001257 hydrogen Substances 0.000 claims description 17
- 229910052739 hydrogen Inorganic materials 0.000 claims description 17
- 229910052749 magnesium Inorganic materials 0.000 claims description 17
- 239000011777 magnesium Substances 0.000 claims description 17
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 15
- 229910052738 indium Inorganic materials 0.000 claims description 13
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 11
- 229910000077 silane Inorganic materials 0.000 claims description 11
- 229910052733 gallium Inorganic materials 0.000 claims description 7
- 229910052757 nitrogen Inorganic materials 0.000 claims description 7
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- 239000004411 aluminium Substances 0.000 claims description 5
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 5
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 5
- 239000012299 nitrogen atmosphere Substances 0.000 claims description 5
- 230000010287 polarization Effects 0.000 abstract description 11
- 239000000463 material Substances 0.000 abstract description 3
- 230000000903 blocking effect Effects 0.000 abstract 1
- 239000011159 matrix material Substances 0.000 abstract 1
- 230000006911 nucleation Effects 0.000 abstract 1
- 238000010899 nucleation Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 116
- 238000005516 engineering process Methods 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000005036 potential barrier Methods 0.000 description 2
- 230000005701 quantum confined stark effect Effects 0.000 description 2
- 230000005428 wave function Effects 0.000 description 2
- 230000005699 Stark effect Effects 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000012792 core layer Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 230000009931 harmful effect Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
The invention provides an InGaN-based blue-green light-emitting diode epitaxial growth method and a structure thereof, wherein the growth method of the epitaxial structure comprises specifically the following steps: performing a high temperature annealing process on a sapphire substrate in an ammonia atmosphere, reducing the temperature to 530-580 degrees and adjusting epitaxial growth atmosphere to grow a low temperature InGaN nucleation layer, and then raising the temperature and sequentially growing an InGan unintentionally doped layer, an n-type InGaN layer, an InyGa1-yN/InxGa1-xN(y> x) multi-quantum well active layer, A p-AlInGaN electron blocking layer, A p-type InGaN layer and the p++ type InGaN contact layer. The InGaN-based blue-green LED epitaxial structure provided in the present invention can effectively reduce the piezoelectric polarization field in an active area to thereby improve light emitting efficiency since the structure reduces lattice mismatch between a quantum well material and a matrix material.
Description
Technical field
The present invention relates to a kind of InGaN base blue-green light LED epitaxial structure and growing method, belong to photoelectric material and devices field.
Background technology
The features such as GaN base high brightness blue, green, energy consumption is low, the life-span long owing to having for white light emitting diode (LED), pollution-free, anti-adverse environment ability is strong, are widely used in multiple fields such as display and lighting.
For the bluish-green LED of traditional GaN base, its active area basic structure is InGaN/GaN Multiple Quantum Well.Although GaN base semi-conducting material and device obtain great development, but still there is many Science and Technology problems and have to be solved.Quantum confined Stark effect problem in the first, InGaN/GaN quantum well.Lattice constant due to InGaN is greater than the lattice constant of GaN, in the InGaN/GaN quantum well along the growth of [0001] direction, larger lattice mismatch is there is between GaN barrier layer and InGaN potential well layer (especially the InGaN of high In ingredient), InGaN layer is subject to action of compressive stress, produces strong piezoelectric polarization fields in active area.What the existence of polarized electric field can make quantum well can be with run-off the straight, produces quantum limit Stark effect.Consequently the energy gap at quantum well place can reduce, the electronics eigen wave function of quantum well conduction band is spatially separated with the hole eigen wave function of valence band simultaneously, electronics and hole are significantly declined at the recombination probability of active area, and the luminous efficiency of quantum well reduces.Can say, the quantum confined Stark effect caused by piezoelectric polarization electric field is the one of the main reasons affecting InGaN/GaN base LED internal quantum efficiency.The second, efficiency rapid drawdown problem.For GaN base LED, usually under very low current density, its external quantum efficiency just can reach peak value.Along with the continuation of current density increases, the external quantum efficiency of LED starts to decline gradually and declines even rapidly, and this so-called efficiency rapid drawdown problem becomes a bottleneck of restriction GaN base great power LED development.
There is a common reason in the generation of above problem, the strong piezoelectric polarization fields that the lattice mismatch namely between active area potential well layer and barrier layer causes.At present, GaN base is blue, green light LED epitaxial structure normally utilizes " two-step method " to grow, and due to lattice mismatch larger between substrate and epitaxial material and thermal mismatching, the epitaxial loayer grown exists the defects such as unavoidable higher density dislocation.And for obtaining the GaN epitaxial layer of better quality, the growth temperature adopted is high; For reducing the Longitudinal Extension of dislocation, the u-GaN layer that General Requirements grows and n-GaN layer thickness reach several micron, thus cause the epitaxial growth time long.More seriously, because the lattice mismatch in multiquantum well region between barrier layer GaN and potential well layer InGaN is large, cause the piezoelectric polarization fields in active area large, finally have impact on the luminous efficiency of LED.Many scholars propose the method that some solve polarized electric field problems in recent years, mainly contain: the heavy doping of quantum well potential barrier, the nitride of growth of cubic crystallographic system, along semi-polarity or non-polar plane growth, utilize In content gradually variational quantum well, use the quantum well of In component stagger arrangement, superlattice, the quaternary compound of use polarization coupling, original GaN barrier layer replace with InGaN potential barrier and use p-InGaN to substitute p-type GaN etc.By these effort, the harmful effect of polarization field to device performance decreases, but these are substantially all the improvement on GaN base LED.
Summary of the invention
The present invention in the current existing GaN base blue green light LED epitaxial structure of solution due to the strong piezoelectric polarization fields problem that lattice mismatch larger between InGaN and GaN of active area causes, a kind of InGaN base blue-green light LED epitaxial structure and growing method are provided.
A kind of InGaN base blue-green light LED epitaxial structure of the present invention realizes by the following technical solutions: a kind of InGaN base blue-green light LED epitaxial structure, comprises the low temperature InGaN nucleating layer, the involuntary doped layer of high temperature InGaN, N-shaped InGaN layer, the In that are from bottom to top arranged in order
yga
1-yn/In
xga
1-xn (y>x) multiple quantum well layer, p-AlInGaN electronic barrier layer, p-type InGaN layer and p++ type InGaN contact layer.
The GaN forming core layer that the present invention adopts InGaN to replace generally using in current GaN base LED structure and involuntary doped layer, with In
xga
1-xn/In
yga
1-yn Multiple Quantum Well, as active area, designs growing InGaN base blue green light LED.This epitaxial structure effectively can reduce the piezoelectric polarization fields in multiquantum well region, and device light emitting efficiency improves more than 5% than traditional GaN base blue green light LED of co-wavelength; And epitaxial growth temperature is lower, in epitaxial structure, the thickness of involuntary doped layer and n-layer is less, thus reduces manufacturing cost.
The growing method of InGaN base blue-green light LED epitaxial structure of the present invention realizes by the following technical solutions: a kind of growing method of InGaN base blue-green light LED epitaxial structure comprises the steps:
(1) substrate annealing process: (0001) surface sapphire substrate is annealed in hydrogen atmosphere, annealing temperature is 1060 DEG C, then cools to 580 DEG C and passes into ammonia, carries out nitrogen treatment 6 minutes to substrate;
(2) growing low temperature InGaN nucleating layer: convert hydrogen atmosphere to nitrogen atmosphere, open gallium source TMGa and indium source TMIn, passing under 0-200sccm hydrogen atmosphere, at 530-580 DEG C of temperature, grow the low temperature InGaN nucleating layer that about 30nm is thick, growth pressure is 600mbar;
(3) the involuntary doped layer of high temperature InGaN is grown: close TMGa and TMIn, temperature is risen to 770 DEG C, pressure drop, to 150mbar, opens TMGa and TMIn again, the involuntary doping InGaN layer of growth 0.2-1.5 micron;
(4) growing n-type InGaN layer: keep the growth temperature in previous step and pressure constant, pass into silane, growth thickness is the N-shaped InGaN layer of the Si doping of 0.3-2.5 micron, and carrier concentration magnitude is 10
18cm
-3, growth terminates rear closedown silane;
(5) In is grown
yga
1-yn/In
xga
1-xn(y>x) multiple quantum well layer: close TMGa, open TEGa, grow In successively
xga
1-xn barrier layer and In
yga
1-yn potential well layer, wherein y>x, barrier layer thickness is 10-15nm, and growth temperature is 770 DEG C, and well layer thickness is 2-5nm, and growth temperature is 690-740 DEG C, and growth pressure remains on 400mbar, and quantum well number is 2-20;
(6) p-AlInGaN electronic barrier layer is grown: keep the growth temperature in previous step constant, open the luxuriant magnesium of aluminium source TMAl and magnesium source-two, reative cell pressure is adjusted to 150mbar, to grow p-type AlInGaN electronic barrier layer, its thickness is 20-30nm, with atomicity percentages Al component for 10-30%, In component is for 5-8%, hole concentration magnitude is 10
17cm
-3;
(7) grow p-type InGaN layer: close TMAl, keep the growth temperature in previous step and reative cell pressure constant, growth thickness is 100nm, and hole concentration magnitude is 10
17cm
-3p-type InGaN layer;
(8) grow p++ type InGaN contact layer: the flow of two luxuriant magnesium is increased 40-60sccm, keep the growth temperature in previous step and pressure constant, growth thickness is the p++-InGaN layer of 20nm;
(9) cool the temperature to 750 DEG C, anneal under pure nitrogen gas atmosphere, annealing time is 15 minutes, is then down to room temperature, terminates growth.
In described step (2), (3), (4), (6), (7) and (8), TMIn, TMGa and NH
3respectively as the source of In, Ga and N.
In described step (4), the dopant of described Si doping is silane.
In described step (5), described TMIn, TEGa and NH
3respectively as the source of In, Ga and N.
In described step (6), described Al source is TMAl, and the dopant of described P type doping is two luxuriant magnesium.
In described step (7) and (8), the dopant of described P type doping is two luxuriant magnesium.
InGaN base blue green light LED epitaxial structure of the present invention and growing method, compared with prior art have the following advantages:
Because the magnitude relationship of III-nitride lattice constant in c face is: InN > GaN > AlN, so the In adopted in InGaN base LED active area
yga
1-yn/In
xga
1-xn(y>x) InGaN/GaN Multiple Quantum Well of adopting than traditional GaN base LED active area of Multiple Quantum Well, the lattice mismatch between its barrier layer and potential well layer reduces, thus is conducive to reducing piezoelectric polarization fields.Therefore, InGaN base blue green light LED epitaxial structure of the present invention significantly can reduce the piezoelectric polarization fields of active area compared to traditional GaN base LED, thus realizes the raising of LED epitaxial structure luminescent properties.In addition, relative to traditional GaN base blue green light LED, in InGaN base blue green light LED of the present invention, the growth temperature of each main epitaxial loayer reduces, and the thickness of the involuntary doped layer of InGaN and N-shaped InGaN layer decreases, thus can shorten growth time, reduces costs; And the growing method of InGaN base blue green light LED epitaxial structure of the present invention is mutually compatible with traditional GaN base LED growth technology, does not need large technology upgrading and scrap build, is conducive to large-scale production and application.
Accompanying drawing explanation
Fig. 1 is InGaN base blue green light LED epitaxial structure schematic diagram.
Fig. 2 is InGaN base blue green light LED multi-quantum pit structure schematic diagram.
1-(0001) surface sapphire substrate, 2-low temperature InGaN nucleating layer, the involuntary doped layer of 3-high temperature InGaN, 4-N-shaped InGaN layer, 5-In
yga
1-yn/In
xga
1-xn (y>x) multiple quantum well layer, 51-In
xga
1-xn barrier layer, 52-In
yga
1-yn potential well layer, 6-p-AlInGaN electronic barrier layer, 7-p-type InGaN layer, 8-p++ type InGaN contact layer.
Embodiment
A kind of InGaN base blue-green light LED epitaxial structure, comprises the low temperature InGaN nucleating layer 2, the involuntary doped layer 3 of high temperature InGaN, N-shaped InGaN layer 4, the In that are from bottom to top arranged in order
yga
1-yn/In
xga
1-xn(y>x) multiple quantum well layer 5, p-AlInGaN electronic barrier layer 6, p-type InGaN layer 7 and p++ type InGaN contact layer 8.
The low temperature InGaN nucleating layer 2 being positioned at the bottom in described epitaxial structure grows in (0001) surface sapphire substrate 1.
A kind of growing method of InGaN base blue-green light LED epitaxial structure comprises the steps:
(1) substrate annealing process: (0001) surface sapphire substrate is annealed in hydrogen atmosphere, annealing temperature is 1060 DEG C, then cools to 580 DEG C and passes into ammonia, carries out nitrogen treatment 6 minutes to substrate;
(2) growing low temperature InGaN nucleating layer: convert hydrogen atmosphere to nitrogen atmosphere, open gallium source TMGa and indium source TMIn, passing into that 0-200sccm(can select 0,50sccm, 100sccm, 150sccm, 200sccm) under hydrogen atmosphere, at 530-580 DEG C of (can select 530 DEG C, 540 DEG C, 550 DEG C, 560 DEG C, 570 DEG C, 580 DEG C) temperature, grow the thick InGaN nucleating layer of about 30nm, growth pressure is 600mbar;
(3) the involuntary doped layer of high temperature InGaN is grown: close TMGa and TMIn, temperature is risen to 770 DEG C, pressure drop is to 150mbar, again open TMGa and TMIn, the involuntary doping InGaN layer of growth 0.2-1.5 micron (0.2 micron, 0.4 micron, 0.6 micron, 0.8 micron, 1.0 microns, 1.2 microns, 1.4 microns, 1.5 microns can be selected);
(4) growing n-type InGaN layer: keep the growth temperature in previous step and pressure constant, pass into silane, growth thickness is the N-shaped InGaN layer of the Si doping of 0.3-2.5 micron (can select 0.3 micron, 0.5 micron, 0.7 micron, 0.9 micron, 1.1 microns, 1.3 microns, 1.5 microns, 1.7 microns, 1.9 microns, 2.1 microns, 2.3 microns, 2.5 microns), and carrier concentration magnitude is 10
18cm
-3, growth terminates rear closedown silane;
(5) In is grown
yga
1-yn/In
xga
1-xn(y>x) multiple quantum well layer: close TMGa, open TEGa, grow In successively
xga
1-xn barrier layer 51 and In
yga
1-yn potential well layer 52, wherein y>x, barrier layer thickness is 10-15nm, growth temperature is 770 DEG C, well layer thickness is 2-5nm, growth temperature is 690-740 DEG C, and growth pressure remains on 400mbar, and quantum well number is 2-20 (can select 2,3,4,5,6,7,8,9,10,11,12,13,14,15,16,17,18,19,20);
(6) p-AlInGaN electronic barrier layer is grown: keep the growth temperature in previous step constant, open the luxuriant magnesium of aluminium source TMAl and magnesium source-two, reative cell pressure is adjusted to 150mbar, to grow p-type AlInGaN electronic barrier layer, its thickness is 20-30nm, with atomicity percentages Al component for 10-30%(can select 30%, 25%, 20%, 15%, 10%), In component is about 5-8%(can select 5%, 6%, 7%, 8%), hole concentration magnitude is 10
17cm
-3;
(7) grow p-type InGaN layer: close TMAl, keep the growth temperature in previous step and reative cell pressure constant, growth thickness is 100nm, and hole concentration magnitude is 10
17cm
-3p-type InGaN layer;
(8) p++ type InGaN contact layer is grown: the flow of two luxuriant magnesium is increased 40-60sccm(can select 40sccm, 45sccm, 50sccm, 55sccm, 60sccm), keep the growth temperature in previous step and pressure constant, growth thickness is the p++-InGaN layer of 20nm;
(9) cool the temperature to 750 DEG C, anneal under pure nitrogen gas atmosphere, annealing time is 15 minutes, is then down to room temperature, terminates growth.
The growing method of embodiment 1 one kinds of InGaN base blue-green light LED epitaxial structures, comprises the steps:
(1) substrate annealing process: (0001) surface sapphire substrate is annealed in hydrogen atmosphere, annealing temperature is 1060 DEG C, then cools to 580 DEG C and passes into ammonia, carries out nitrogen treatment 6 minutes to substrate;
(2) growing low temperature InGaN nucleating layer: convert hydrogen atmosphere to nitrogen atmosphere, opens gallium source TMGa and indium source TMIn, and passing under 50sccm hydrogen atmosphere, growing the InGaN nucleating layer that 30nm is thick at 580 DEG C of temperature, growth pressure is 600mbar;
(3) the involuntary doped layer of high temperature InGaN is grown: close TMGa and TMIn, temperature is risen to 770 DEG C, pressure drop, to 150mbar, opens TMGa and TMIn again, grows the involuntary doping InGaN layer of 1 micron;
(4) growing n-type InGaN layer: keep the growth temperature in previous step and pressure constant, pass into silane, growth thickness is the N-shaped InGaN layer of the Si doping of 1.5um, and carrier concentration reaches 7 × 10
18cm
-3, growth terminates rear closedown silane;
(5) In is grown
yga
1-yn/In
xga
1-xn multiple quantum well layer: close TMGa, open TEGa, grow In successively
xga
1-xn barrier layer and In
yga
1-yn potential well layer, wherein y>x, barrier layer thickness is 12nm, and growth temperature is 770 DEG C, and well layer thickness is 3nm, and growth temperature is 690 DEG C, and growth pressure remains on 400mbar, and quantum well number is 6;
(6) p-AlInGaN electronic barrier layer is grown: keep the growth temperature in previous step constant, open the luxuriant magnesium of aluminium source TMAl and magnesium source-two, reative cell pressure is adjusted to 150mbar, to grow p-type AlInGaN electronic barrier layer, its thickness is 25nm, with atom number percentages Al component be 17%, In component for 5%, hole concentration magnitude is 10
17cm
-3;
(7) grow p-type InGaN layer: close TMAl, keep the growth temperature in previous step and reative cell pressure constant, growth thickness is 100nm, and hole concentration magnitude is 10
17cm
-3p-type InGaN layer;
(8) grow p++ type InGaN contact layer: the flow of two luxuriant magnesium is increased 50sccm, keep the growth temperature in previous step and pressure constant, growth thickness is the p++-InGaN layer of 20nm;
(9) cool the temperature to 750 DEG C, anneal under pure nitrogen gas atmosphere, annealing time is 15 minutes, is then down to room temperature, terminates growth.
The growing method of embodiment 2 one kinds of InGaN base blue-green light LED epitaxial structures, comprises the steps:
(1) substrate annealing process: (0001) surface sapphire substrate is annealed in hydrogen atmosphere, annealing temperature is 1060 DEG C, then cools to 580 DEG C and passes into ammonia, carries out nitrogen treatment 6 minutes to substrate;
(2) growing low temperature InGaN nucleating layer: convert hydrogen atmosphere to nitrogen atmosphere, opens gallium source TMGa and indium source TMIn, is passing under 50sccm hydrogen atmosphere, and at 580 DEG C of temperature, grow the low temperature InGaN nucleating layer that 30nm is thick, growth pressure is 600mbar.
(3) the involuntary doped layer of high temperature InGaN is grown: close TMGa and TMIn, temperature is risen to 770 DEG C, pressure drop, to 150mbar, opens TMGa and TMIn again, grows the involuntary doping InGaN layer of 1 micron;
(4) growing n-type InGaN layer: keep the growth temperature in previous step and pressure constant, pass into silane, growth thickness is the N-shaped InGaN layer of 1.5um, and carrier concentration reaches 7 × 10
18cm
-3, growth terminates rear closedown silane;
(5) In is grown
yga
1-yn/In
xga
1-xn multiple quantum well layer: close TMGa, open TEGa, grow In successively
xga
1-xn barrier layer and In
yga
1-yn potential well layer, wherein y>x, barrier layer thickness is 12nm, and growth temperature is 770 DEG C, and well layer thickness is 3nm, and growth temperature is 740 DEG C, and growth pressure remains on 400mbar, and quantum well number is 6;
(6) p-AlInGaN electronic barrier layer is grown: keep the growth temperature in previous step constant, open the luxuriant magnesium of aluminium source TMAl and magnesium source-two, reative cell pressure is adjusted to 150mbar, to grow p-type AlInGaN electronic barrier layer, its thickness is 25nm, with atomicity percentages Al component be 17%, In component for 5%, hole concentration magnitude is 10
17cm
-3;
(7) grow p-type InGaN layer: close TMAl, keep the growth temperature in previous step and reative cell pressure constant, growth thickness is 100nm, and hole concentration magnitude is 10
17cm
-3p-type InGaN layer;
(8) grow p++ type InGaN contact layer: the flow of two luxuriant magnesium is increased 50sccm, keep the growth temperature in previous step and pressure constant, growth thickness is the p++-InGaN layer of 20nm;
(9) cool the temperature to 750 DEG C, anneal under pure nitrogen gas atmosphere, annealing time is 15 minutes, is then down to room temperature, terminates growth.
By the intake in overall balance source, growth temperature, pressure and the hydrogen flowing quantity control In component that passes into, wherein in low temperature InGaN nucleating layer 2, the involuntary doped layer 3 of high temperature InGaN, N-shaped InGaN layer 4, p-type AlInGaN layer 6, p-type InGaN layer 7 and p++ type InGaN layer 8, In atom number all controls between 5-8% than content.
Obviously, above-described embodiment is only for clearly example being described, and the restriction not to execution mode.For those of ordinary skill in the field, can also make other changes in different forms on the basis of the above description.Here exhaustive without the need to also giving all execution modes.And thus the apparent change of amplifying out or variation be still among the protection range of the invention.
Claims (4)
1. an InGaN base blue-green light LED epitaxial structure, is characterized in that, comprises the low temperature InGaN nucleating layer (2), the involuntary doped layer of high temperature InGaN (3), N-shaped InGaN layer (4), the In that are from bottom to top arranged in order
yga
1-yn/In
xga
1-xn(y>x) multiple quantum well layer (5), p-AlInGaN electronic barrier layer (6), p-type InGaN layer (7) and p++ type InGaN contact layer (8).
2. a kind of InGaN base blue-green light LED epitaxial structure according to claim 1, is characterized in that, is positioned at low temperature InGaN nucleating layer (2) growth of the bottom in described epitaxial structure in (0001) surface sapphire substrate (1).
3., for growing a method for InGaN base blue-green light LED epitaxial structure as claimed in claim 2, it is characterized in that, comprise the steps:
(1) substrate annealing process: (0001) surface sapphire substrate is annealed in hydrogen atmosphere, annealing temperature is 1060 DEG C, then cools to 580 DEG C and passes into ammonia, carries out nitrogen treatment 6 minutes to substrate;
(2) growing low temperature InGaN nucleating layer: convert hydrogen atmosphere to nitrogen atmosphere, open gallium source TMGa and indium source TMIn, passing under 0-200sccm hydrogen atmosphere, at 530-580 DEG C of temperature, grow the low temperature InGaN nucleating layer that about 30nm is thick, growth pressure is 600mbar;
(3) the involuntary doped layer of high temperature InGaN is grown: close TMGa and TMIn, temperature is risen to 770 DEG C, pressure drop, to 150mbar, opens TMGa and TMIn again, the involuntary doping InGaN layer of growth 0.2-1.5 micron;
(4) growing n-type InGaN layer: keep the growth temperature in previous step and pressure constant, pass into silane, growth thickness is the N-shaped InGaN layer of the Si doping of 0.3-2.5 micron, and carrier concentration magnitude is 10
18cm
-3, growth terminates rear closedown silane;
(5) In is grown
yga
1-yn/In
xga
1-xn(y>x) multiple quantum well layer: close TMGa, open TEGa, grow In successively
xga
1-xn barrier layer and In
yga
1-yn potential well layer, wherein y>x, barrier layer thickness is 10-15nm, and growth temperature is 770 DEG C, and well layer thickness is 2-5nm, and growth temperature is 690-740 DEG C, and growth pressure remains on 400mbar, and quantum well number is 2-20;
(6) p-AlInGaN electronic barrier layer is grown: keep the growth temperature in previous step constant, open the luxuriant magnesium of aluminium source TMAl and magnesium source-two, reative cell pressure is adjusted to 150mbar, to grow p-type AlInGaN electronic barrier layer, its thickness is 20-30nm, with atomicity percentages Al component for 10-30%, In component is for 5-8%, hole concentration magnitude is 10
17cm
-3;
(7) grow p-type InGaN layer: close TMAl, keep the growth temperature in previous step and reative cell pressure constant, growth thickness is 100nm, and hole concentration magnitude is 10
17cm
-3p-type InGaN layer;
(8) grow p++ type InGaN contact layer: the flow of two luxuriant magnesium is increased 40-60sccm, keep the growth temperature in previous step and pressure constant, growth thickness is the p++-InGaN layer of 20nm;
(9) cool the temperature to 750 DEG C, anneal under pure nitrogen gas atmosphere, annealing time is 15 minutes, is then down to room temperature, terminates growth.
4. the growing method of a kind of InGaN base blue-green light LED epitaxial structure according to claim 3, it is characterized in that: by the intake in overall balance source, growth temperature, pressure and the hydrogen flowing quantity control In component that passes into, wherein in low temperature InGaN nucleating layer (2), the involuntary doped layer of high temperature InGaN (3), N-shaped InGaN layer (4), p-type AlInGaN layer (6), p-type InGaN layer (7) and p++ type InGaN layer (8), In atom number all controls between 5-8% than content.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410565126.3A CN104409587B (en) | 2014-10-22 | 2014-10-22 | A kind of InGaN base blue-green light LED epitaxial structure and growing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410565126.3A CN104409587B (en) | 2014-10-22 | 2014-10-22 | A kind of InGaN base blue-green light LED epitaxial structure and growing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104409587A true CN104409587A (en) | 2015-03-11 |
| CN104409587B CN104409587B (en) | 2016-12-28 |
Family
ID=52647200
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410565126.3A Active CN104409587B (en) | 2014-10-22 | 2014-10-22 | A kind of InGaN base blue-green light LED epitaxial structure and growing method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104409587B (en) |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103346219A (en) * | 2013-07-12 | 2013-10-09 | 湘能华磊光电股份有限公司 | Growing method for duplex multi-quantum well luminescent layer structure and LED epitaxial structure |
| CN104979445A (en) * | 2015-05-25 | 2015-10-14 | 华南理工大学 | Light-emitting diode structure with indium-containing conductive layer and preparation method therefor |
| CN105161592A (en) * | 2015-07-29 | 2015-12-16 | 山东浪潮华光光电子股份有限公司 | LED having N type AlInGaN contact layer and preparation method |
| CN105789391A (en) * | 2016-04-28 | 2016-07-20 | 聚灿光电科技股份有限公司 | GaN-based LED epitaxial structure and manufacturing method thereof |
| CN106206887A (en) * | 2016-08-29 | 2016-12-07 | 扬州中科半导体照明有限公司 | A kind of LED epitaxial slice and production method thereof |
| CN106505076A (en) * | 2016-11-09 | 2017-03-15 | 太原理工大学 | Micrometre array LED preparation methoies |
| CN106711296A (en) * | 2016-11-29 | 2017-05-24 | 华灿光电（浙江）有限公司 | Epitaxial wafer of green light emitting diode and growth method thereof |
| CN106920866A (en) * | 2017-02-20 | 2017-07-04 | 扬州中科半导体照明有限公司 | Prolong method in a kind of place of regulation and control UV LED epitaxial wafer wavelength |
| CN108538973A (en) * | 2018-05-15 | 2018-09-14 | 华灿光电（浙江）有限公司 | A kind of LED epitaxial slice and preparation method thereof |
| CN108666398A (en) * | 2017-03-28 | 2018-10-16 | 山东浪潮华光光电子股份有限公司 | A kind of LED epitaxial structure and its growing method |
| US20200220325A1 (en) * | 2017-08-30 | 2020-07-09 | Osram Oled Gmbh | Optoelectronic semiconductor component |
| CN115842078A (en) * | 2023-02-10 | 2023-03-24 | 江西兆驰半导体有限公司 | Deep ultraviolet LED epitaxial wafer, preparation method thereof and LED |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1353867A (en) * | 1999-06-07 | 2002-06-12 | 日亚化学工业株式会社 | Nitride semiconductor device |
| US20040023427A1 (en) * | 2001-09-27 | 2004-02-05 | University Of Singapore | Forming indium nitride (InN) and indium gallium nitride (InGaN) quantum dots grown by metal-organic-vapor-phase-epitaxy (MOCVD) |
| CN101589478A (en) * | 2006-09-08 | 2009-11-25 | 新加坡科技研究局 | Tunable wavelength light emitting diode |
| CN101728472A (en) * | 2009-12-02 | 2010-06-09 | 中国科学院半导体研究所 | Multilayer LED chip structure and preparation method thereof |
| CN103022292A (en) * | 2012-11-21 | 2013-04-03 | 浙江优纬光电科技有限公司 | InGaN-based blue light LED (Light Emitting Diode) device and preparation method thereof |
| CN103199169A (en) * | 2013-03-13 | 2013-07-10 | 扬州中科半导体照明有限公司 | Epitaxial growth structure in GaN base green-light light emitting diode (LED) with P-type GaN |
| CN103296165A (en) * | 2013-06-19 | 2013-09-11 | 中国科学院半导体研究所 | Energy band adjustable light-emitting diode (LED) quantum well structure |
| CN103682010A (en) * | 2012-09-17 | 2014-03-26 | 比亚迪股份有限公司 | LED chip and preparation method |
-
2014
- 2014-10-22 CN CN201410565126.3A patent/CN104409587B/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1353867A (en) * | 1999-06-07 | 2002-06-12 | 日亚化学工业株式会社 | Nitride semiconductor device |
| US20040023427A1 (en) * | 2001-09-27 | 2004-02-05 | University Of Singapore | Forming indium nitride (InN) and indium gallium nitride (InGaN) quantum dots grown by metal-organic-vapor-phase-epitaxy (MOCVD) |
| CN101589478A (en) * | 2006-09-08 | 2009-11-25 | 新加坡科技研究局 | Tunable wavelength light emitting diode |
| CN101728472A (en) * | 2009-12-02 | 2010-06-09 | 中国科学院半导体研究所 | Multilayer LED chip structure and preparation method thereof |
| CN103682010A (en) * | 2012-09-17 | 2014-03-26 | 比亚迪股份有限公司 | LED chip and preparation method |
| CN103022292A (en) * | 2012-11-21 | 2013-04-03 | 浙江优纬光电科技有限公司 | InGaN-based blue light LED (Light Emitting Diode) device and preparation method thereof |
| CN103199169A (en) * | 2013-03-13 | 2013-07-10 | 扬州中科半导体照明有限公司 | Epitaxial growth structure in GaN base green-light light emitting diode (LED) with P-type GaN |
| CN103296165A (en) * | 2013-06-19 | 2013-09-11 | 中国科学院半导体研究所 | Energy band adjustable light-emitting diode (LED) quantum well structure |
Cited By (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103346219B (en) * | 2013-07-12 | 2016-02-24 | 湘能华磊光电股份有限公司 | The growing method of compound multiple quantum well light emitting Rotating fields and LED epitaxial structure |
| CN103346219A (en) * | 2013-07-12 | 2013-10-09 | 湘能华磊光电股份有限公司 | Growing method for duplex multi-quantum well luminescent layer structure and LED epitaxial structure |
| CN104979445A (en) * | 2015-05-25 | 2015-10-14 | 华南理工大学 | Light-emitting diode structure with indium-containing conductive layer and preparation method therefor |
| CN105161592A (en) * | 2015-07-29 | 2015-12-16 | 山东浪潮华光光电子股份有限公司 | LED having N type AlInGaN contact layer and preparation method |
| CN105789391A (en) * | 2016-04-28 | 2016-07-20 | 聚灿光电科技股份有限公司 | GaN-based LED epitaxial structure and manufacturing method thereof |
| CN106206887A (en) * | 2016-08-29 | 2016-12-07 | 扬州中科半导体照明有限公司 | A kind of LED epitaxial slice and production method thereof |
| CN106206887B (en) * | 2016-08-29 | 2018-08-03 | 扬州中科半导体照明有限公司 | A kind of LED epitaxial slice and its production method |
| CN106505076A (en) * | 2016-11-09 | 2017-03-15 | 太原理工大学 | Micrometre array LED preparation methoies |
| CN106505076B (en) * | 2016-11-09 | 2018-07-31 | 太原理工大学 | Micrometre array LED preparation methods |
| CN106711296B (en) * | 2016-11-29 | 2019-11-29 | 华灿光电（浙江）有限公司 | Epitaxial wafer of green light emitting diode and growth method thereof |
| CN106711296A (en) * | 2016-11-29 | 2017-05-24 | 华灿光电（浙江）有限公司 | Epitaxial wafer of green light emitting diode and growth method thereof |
| CN106920866A (en) * | 2017-02-20 | 2017-07-04 | 扬州中科半导体照明有限公司 | Prolong method in a kind of place of regulation and control UV LED epitaxial wafer wavelength |
| CN106920866B (en) * | 2017-02-20 | 2019-01-15 | 扬州中科半导体照明有限公司 | A kind of epitaxy method of regulation UV LED epitaxial wafer wavelength |
| CN108666398A (en) * | 2017-03-28 | 2018-10-16 | 山东浪潮华光光电子股份有限公司 | A kind of LED epitaxial structure and its growing method |
| US20200220325A1 (en) * | 2017-08-30 | 2020-07-09 | Osram Oled Gmbh | Optoelectronic semiconductor component |
| US11527865B2 (en) * | 2017-08-30 | 2022-12-13 | Osram Oled Gmbh | Optoelectronic semiconductor component |
| CN108538973A (en) * | 2018-05-15 | 2018-09-14 | 华灿光电（浙江）有限公司 | A kind of LED epitaxial slice and preparation method thereof |
| CN115842078A (en) * | 2023-02-10 | 2023-03-24 | 江西兆驰半导体有限公司 | Deep ultraviolet LED epitaxial wafer, preparation method thereof and LED |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104409587B (en) | 2016-12-28 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104409587B (en) | A kind of InGaN base blue-green light LED epitaxial structure and growing method | |
| CN101488550B (en) | Manufacturing method for LED in high In ingredient multiple InGaN/GaN quantum wells structure | |
| CN102368519B (en) | A kind of method improving semiconductor diode multiple quantum well light emitting efficiency | |
| CN101488548B (en) | LED of high In ingredient multiple InGaN/GaN quantum wells structure | |
| CN101359710B (en) | Manufacturing method of green light LED | |
| CN102664145B (en) | Method for growing asymmetric electron storing layer high-luminance luminous diode by metal organic compound gas phase epitaxy technology | |
| CN106611808B (en) | Growth method of light-emitting diode epitaxial wafer | |
| CN106229390B (en) | Growth method of GaN-based light emitting diode chip | |
| CN100580966C (en) | Green light-emitting diode | |
| CN103730552A (en) | Epitaxial growth method for improving LED light emitting efficiency | |
| CN109192825B (en) | Light emitting diode epitaxial wafer and manufacturing method thereof | |
| CN103337573A (en) | Epitaxial wafer of semiconductor light emitting diode and manufacturing method of epitaxial wafer | |
| CN103515495A (en) | GaN-base light-emitting diode chip growing method | |
| CN104576852A (en) | Stress regulation method for luminous quantum wells of GaN-based LED epitaxial structure | |
| CN116247506B (en) | High-performance gallium nitride-based laser and N-type GaN layer and growth method thereof | |
| CN103996769A (en) | LED epitaxial layer structure, growing method of LED epitaxial layer structure and LED chip with the LED epitaxial layer structure | |
| CN109449264B (en) | Light emitting diode epitaxial wafer and manufacturing method thereof | |
| CN109671817B (en) | Light emitting diode epitaxial wafer and preparation method thereof | |
| CN113161453B (en) | Light emitting diode epitaxial wafer and manufacturing method thereof | |
| WO2024183278A1 (en) | Quantum well led provided with algan/ingan superlattice barrier layer and preparation method therefor | |
| CN103872204A (en) | P (Positive) type insert layer with cycle structure and growing method | |
| CN203445143U (en) | Light-emitting diode structure for reducing defect density of blue light LED | |
| CN114141917B (en) | Low-stress GaN-based light-emitting diode epitaxial wafer and preparation method thereof | |
| CN106910802B (en) | Epitaxial structure for realizing short-wavelength ultraviolet LED | |
| CN106848022A (en) | A kind of LED epitaxial structure and its growing method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |