CN203445143U

CN203445143U - Light-emitting diode structure for reducing defect density of blue light LED

Info

Publication number: CN203445143U
Application number: CN201320274758.5U
Authority: CN
Inventors: 田宇; 郑建钦; 曾颀尧; 赖志豪; 郭廷瑞; 黄绣云; 黄信智; 张志刚; 吴东海; 童敬文; 林政志; 李鹏飞
Original assignee: NANTONG TONGFANG SEMICONDUCTOR CO Ltd; Tongfang Co Ltd
Current assignee: NANTONG TONGFANG SEMICONDUCTOR CO Ltd; Tsinghua Tongfang Co Ltd; Tongfang Co Ltd
Priority date: 2013-05-20
Filing date: 2013-05-20
Publication date: 2014-02-19
Anticipated expiration: 2023-05-20

Abstract

A light-emitting diode structure for reducing defect density of a blue light LED relates to the epitaxial technical field of light-emitting diodes. The light-emitting diode structure, from bottom to up, sequentially comprises a patterned sapphire substrate, an AIN buffer layer, a U-type GaN layer, an N-type GaN layer, an active region, an electron blocking layer and a P-type GaN layer. The structural characteristics of the light-emitting diode structure are that the growth thickness of the U-type GaN layer is 1 to 10 [mu]m; an AlxGa1-xN/SiNx defect blocking layer is interposed in the middle of the U-type GaN layer, wherein the component of Al is 0.01<X<1. Compared with the prior art, the light-emitting diode structure can effectively reduce dislocation density, improve the crystalline quality of an epitaxial layer and enhance the light-emitting efficiency of the blue light LED.

Description

Reduce the light emitting diode construction of blue-ray LED defect concentration

Technical field

The utility model relates to LED epitaxial technical field, particularly can reduce the light emitting diode construction of blue-ray LED defect concentration.

Background technology

Along with the fast development of LED industry, people are more and more higher for the requirement of LED brightness, are constantly being devoted to improve LED brightness.The reason that affects brightness in blue light field mainly contain following some: one, between substrate and epitaxial loayer, have compared with Macrolattice mismatch; Two, active area MQW band curvature; Three, high hole concentration.

In prior art, blue-ray LED light emitting diode construction is to comprise successively that from bottom to up patterned Sapphire Substrate, AlN resilient coating, U-shaped GaN layer, N-type GaN layer, active area, electronic barrier layer and P type GaN layer form, as shown in Figure 1, in blue-ray LED growth course, owing to having larger lattice mismatch and thermal mismatching between substrate and epitaxial loayer, its dislocation density reaches 10 ⁹cm ^-2above.Therefore, produce spontaneous polarization and piezoelectric effect, thereby form stronger internal electric field, impel the bending that can be with, reduce the compound probability of wave function, the luminous efficiency of LED also will significantly decline.

Summary of the invention

For above-mentioned the deficiencies in the prior art, the purpose of this utility model is to provide a kind of light emitting diode construction that reduces blue-ray LED defect concentration.It can effectively reduce dislocation density, improves the crystal mass of epitaxial loayer, promotes the luminous efficiency of blue-ray LED.

In order to reach foregoing invention object, the technical solution of the utility model realizes as follows:

The light emitting diode construction that reduces blue-ray LED defect concentration, it comprises patterned Sapphire Substrate, AlN resilient coating, U-shaped GaN layer, N-type GaN layer, active area, electronic barrier layer and P type GaN layer from bottom to up successively.Its design feature is, the growth thickness of described U-shaped GaN layer is 1-10um, inserts one deck AlxGa1-xN/SiNx defect barrier layer in the middle of U-shaped GaN layer, and wherein the component of Al is 0.01<X<1.

In above-mentioned light emitting diode construction, grow in described AlxGa1-xN/SiNx defect barrier layer in nitrogen or hydrogen environment, and growth temperature is 650-1200 ℃, and growth pressure is at 50-800mbar, and growth cycle is 1-10.

In above-mentioned light emitting diode construction, in described AlxGa1-xN/SiNx defect barrier layer, the thickness of AlxGa1-xN is 10-5000 dust, and the thickness of SiNx is 10-5000 dust.

The utility model, owing to having adopted said structure, increases one deck AlxGa1-xN/SiNx defect barrier layer in U-shaped GaN layer, makes epitaxial loayer defect concentration can be reduced to 10 ¹~ 10 ⁷cm ³, improve greatly the crystal mass of epitaxial loayer.The utility model structure not only can, by the about 0.1-0.2V of lower voltage, meanwhile, also can make interior quantum luminous efficiency promote more than 5%.Compared with the existing technology, the utility model is by changing the variation of stress, reduce lattice mismatch between substrate and epitaxial loayer, thereby greatly lower the defect concentration in epitaxial loayer, the crystal mass that improves epitaxial loayer, reaches reduction internal electric field, slows down the bending that can be with, and then the impact of reduction device inside extinction, the luminous efficiency of raising blue-ray LED.

Below in conjunction with the drawings and specific embodiments, the utility model is described further.

Accompanying drawing explanation

Fig. 1 is the schematic diagram of LED epitaxial structure in prior art;

Fig. 2 is structural representation of the present utility model.

Embodiment

Referring to Fig. 2, the utility model comprises patterned Sapphire Substrate 1, AlN resilient coating 2, U-shaped GaN layer 3, N-type GaN layer 4, active area 5, electronic barrier layer 6 and P type GaN layer 7 from bottom to up successively.The growth thickness of U-shaped GaN layer 3 is 1-10um, in the middle of U-shaped GaN layer 3, inserts one deck AlxGa1-xN/SiNx defect barrier layer 10, and wherein the component of Al is 0.01<X<1.Grow in AlxGa1-xN/SiNx defect barrier layer 10 in nitrogen or hydrogen environment, growth temperature is 650-1200 ℃, and growth pressure is at 50-800mbar, and growth cycle is 1-10.In AlxGa1-xN/SiNx defect barrier layer 10, the thickness of AlxGa1-xN is 10-5000 dust, and the thickness of SiNx is 10-5000 dust.

Embodiment mono-:

The preparation method of the utility model structure carries out high-temperature baking in metallo-organic compound chemical gaseous phase deposition MOCVD reacting furnace, removes the residual impurity on Sapphire Substrate 1 surface.Slow cooling is at 500 ℃ again, growth one deck AlN resilient coating 2.Then heat up rapidly, at 1000 ℃ of U-shaped GaN layers 3 of growth, about 10min that grows, inserts one deck superlattice AlxGa1-xN/SiNx defect barrier layer 10.The in the situation that of hydrogen or nitrogen, temperature is grown at 650 ℃, and Al first grows _xga _1-xn thickness is 10 dusts, regrowth SiN _xthickness is 10 dusts, then at the temperature of 1000 ℃ the U-shaped GaN layer 3 of continued growth, growth time is 20min.Afterwards, at device upper surface growth N-type GaN layer 4, growth temperature is 1000 ℃, and growth thickness is 0.5um.

Continuation is in device upper surface growth active area 5, and at 600 ℃ of high temperature, layer is built in growth, falls temperature 500 growth trap layers.The electronic barrier layer 6 of growing at 600 ℃, thickness is 50 dusts.Regrowth P type GaN layer 7, growth temperature is 600 ℃, and thickness is 1000 dusts, and the concentration of Mg is 5x10 ¹⁷cm ³.

Embodiment bis-:

The preparation method of the utility model structure carries out high-temperature baking in metallo-organic compound chemical gaseous phase deposition MOCVD reacting furnace, removes the residual impurity on Sapphire Substrate 1 surface.Slow cooling is at 700 ℃ again, growth one deck AlN resilient coating 2.Then heat up rapidly, at 1100 ℃ of U-shaped GaN layers 3 of growth, about 40min that grows, inserts one deck superlattice AlxGa1-xN/SiNx defect barrier layer 10.The in the situation that of hydrogen or nitrogen, temperature is grown at 850 ℃, and Al first grows _xga _1-xn thickness is 1000 dusts, regrowth SiN _xthickness is 300 dusts, then at the temperature of 1100 ℃ the U-shaped GaN layer 3 of continued growth, growth time is 40min.Afterwards, at device upper surface growth N-type GaN layer 4, growth temperature is 1100 ℃, and growth thickness is 3um.

Continuation is in device upper surface growth active area 5, and at 800 ℃ of high temperature, layer is built in growth, falls temperature 700 growth trap layers.The electronic barrier layer 6 of growing at 800 ℃, thickness is 5000 dusts.Regrowth P type GaN layer 7, growth temperature is 800 ℃, and thickness is 3000 dusts, and the concentration of Mg is 5x10 ¹⁹cm ³.

Embodiment tri-:

The preparation method of the utility model structure carries out high-temperature baking in metallo-organic compound chemical gaseous phase deposition MOCVD reacting furnace, removes the residual impurity on Sapphire Substrate 1 surface.Slow cooling is at 900 ℃ again, growth one deck AlN resilient coating 2.Then heat up rapidly, at 1200 ℃ of U-shaped GaN layers 3 of growth, about 80min that grows, inserts one deck superlattice AlxGa1-xN/SiNx defect barrier layer 10.The in the situation that of hydrogen or nitrogen, temperature is grown at 1200 ℃, and Al first grows _xga _1-xn thickness is 5000 dusts, regrowth SiN _xthickness is 5000 dusts, then at the temperature of 1200 ℃ the U-shaped GaN layer 3 of continued growth, growth time is 90min.Afterwards, at device upper surface growth N-type GaN layer 4, growth temperature is 1200 ℃, and growth thickness is 10um.

Continuation is in device upper surface growth active area 5, and at 1000 ℃ of high temperature, layer is built in growth, falls temperature 900 growth trap layers.The electronic barrier layer 6 of growing at 1000 ℃, thickness is 10000 dusts.Regrowth P type GaN layer 7, growth temperature is 1000 ℃, and thickness is 5000 dusts, and the concentration of Mg is 1x10 ²³cm ³.

According to the utility model LED epitaxial structure of growing of the mode in the various embodiments described above, also can make further improvements, be included in U-shaped GaN layer, U-shaped In _xga _1-xn layer and U-shaped Al _xga _1-xin N layer (0<X<1), N-type GaN layer, N-type In _xga _1-xn layer and N-type Al _xga _1-xin N layer (0<X<1), P type GaN layer, P type In _xga _1-xn layer and P type Al _xga _1-xin N layer (0<X<1), insert Al _xga _1-xn/SiN _x(0<X<1) defect barrier layer, all belongs to improvement of the present utility model.Meanwhile, insert layer material also can be (Al _xga ₁-x) _yin ₁- _y(0<x<1,0<y<1), In _xga _1-xn (0<x<1), Al _xin _1-xn (0<x<1) GaN and MgN, SiN or its combination in any.

The above light emitting diode construction is only the better embodiment of the utility model; not in order to limit the utility model; all within the principle of technical solutions of the utility model, institute changes, is equal to replacement, improvement etc., all should belong to the scope of the utility model protection.

Claims

1. reduce the light emitting diode construction of blue-ray LED defect concentration, it comprises patterned Sapphire Substrate (1), AlN resilient coating (2), U-shaped GaN layer (3), N-type GaN layer (4), active area (5), electronic barrier layer (6) and P type GaN layer (7) from bottom to up successively, it is characterized in that: the growth thickness of described U-shaped GaN layer (3) is 1-10um, in the middle of U-shaped GaN layer (3), insert one deck AlxGa1-xN/SiNx defect barrier layer (10).

2. the light emitting diode construction of reduction blue-ray LED defect concentration according to claim 1, is characterized in that: in described AlxGa1-xN/SiNx defect barrier layer (10), the thickness of AlxGa1-xN is 10-5000 dust, and the thickness of SiNx is 10-5000 dust.