CN106299059A - A kind of LED epitaxial structure improving internal quantum efficiency having electronic barrier layer - Google Patents
A kind of LED epitaxial structure improving internal quantum efficiency having electronic barrier layer Download PDFInfo
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- CN106299059A CN106299059A CN201510258427.6A CN201510258427A CN106299059A CN 106299059 A CN106299059 A CN 106299059A CN 201510258427 A CN201510258427 A CN 201510258427A CN 106299059 A CN106299059 A CN 106299059A
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- 230000004888 barrier function Effects 0.000 title claims abstract description 55
- 230000012010 growth Effects 0.000 claims abstract description 70
- 239000000758 substrate Substances 0.000 claims abstract description 16
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 24
- 229910052757 nitrogen Inorganic materials 0.000 claims description 12
- NTQGILPNLZZOJH-UHFFFAOYSA-N disilicon Chemical compound [Si]#[Si] NTQGILPNLZZOJH-UHFFFAOYSA-N 0.000 claims description 9
- 239000001257 hydrogen Substances 0.000 claims description 6
- 229910052739 hydrogen Inorganic materials 0.000 claims description 6
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 3
- 150000002431 hydrogen Chemical class 0.000 claims description 3
- 229910052594 sapphire Inorganic materials 0.000 claims description 3
- 239000010980 sapphire Substances 0.000 claims description 3
- 229910002704 AlGaN Inorganic materials 0.000 abstract description 7
- 230000000694 effects Effects 0.000 abstract description 4
- 230000007547 defect Effects 0.000 abstract description 3
- 238000002347 injection Methods 0.000 abstract description 2
- 239000007924 injection Substances 0.000 abstract description 2
- 238000003780 insertion Methods 0.000 abstract description 2
- 230000037431 insertion Effects 0.000 abstract description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000004913 activation Effects 0.000 description 3
- 238000000137 annealing Methods 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 230000007773 growth pattern Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000000737 periodic effect Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 230000000903 blocking effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000004047 hole gas Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
A kind of LED epitaxial structure improving internal quantum efficiency having electronic barrier layer, relates to LED epitaxial technical field.The present invention includes patterned substrate, GaN cushion, layer of undoped gan, N-type GaN layer, active area, electronic barrier layer, p-type GaN layer and p-type contact layer the most successively.It is structurally characterized in that, described electronic barrier layer includes front electronic barrier layer, SiN/GaN SLs type n GaN layer and rear electronic barrier layer the most successively.Described SiN/GaN SLs type n GaN layer includes SiN layer and the GaN layer of alternating growth the most successively.The present invention is insertion SiN/GaN SLs type n GaN layer in electronic barrier layer p AlGaN, not only can improve internal quantum efficiency by the lifting of the raising of hole concentration and injection efficiency, moreover it is possible to by the stop of defect is improved antistatic effect.
Description
Technical field
The present invention relates to LED epitaxial technical field, particularly there is the LED epitaxial structure of electronic barrier layer.
Background technology
The advantages such as III-V nitride light emitting diode has efficiently, energy-saving and environmental protection, life-span length, but now with the expansion of LED application, people are more and more higher to its requirement, the especially requirement to brightness.And in the structure being favorably improved brightness, electronic barrier layer has critically important effect.
In the prior art, owing to electronics and hole are in the difference of the aspect such as effective mass, mobility, cause that carrier injects is asymmetric, electrons leaks into p-GaN, therefore typically can insert one layer of p-AlGaN electronic barrier layer between MQW and p-GaN, utilize the broad stopband width of p-AlGaN to stop electronics.But the strong polarized electric field between p-AlGaN and GaN can cause band curvature so that hole is difficult to inject MQW, reduces the blocking capability of electronics simultaneously.Along with the increase of Al content in p-AlGaN electronic barrier layer, it stops that the ability of electronics can become strong, but piezoelectric polarization becomes by force the most therewith, and hole is also more difficult to inject.Therefore p-AlGaN electronic barrier layer has important impact to the internal quantum efficiency of III-V nitride light emitting diode.
Summary of the invention
For above-mentioned the deficiencies in the prior art, it is an object of the invention to provide a kind of LED epitaxial structure improving internal quantum efficiency having electronic barrier layer.It is insertion SiN/GaN SLs type n-GaN layer in electronic barrier layer p-AlGaN, not only can improve internal quantum efficiency by the lifting of the raising of hole concentration and injection efficiency, moreover it is possible to by the stop of defect is improved antistatic effect.
In order to reach foregoing invention purpose, technical scheme realizes as follows:
A kind of LED epitaxial structure improving internal quantum efficiency having electronic barrier layer, it includes patterned substrate, GaN cushion, layer of undoped gan, N-type GaN layer, active area, electronic barrier layer, p-type GaN layer and p-type contact layer the most successively.It is structurally characterized in that, described electronic barrier layer includes front electronic barrier layer, SiN/GaN SLs type n-GaN layer and rear electronic barrier layer the most successively.Described SiN/GaN SLs type n-GaN layer includes SiN layer and the GaN layer of alternating growth the most successively.
In above-mentioned LED epitaxial structure, described SiN layer and GaN layer alternating growth cycle are 4-20 cycle, and SiN layer growth time is 10-50sec, and GaN layer thickness is 10-50 angstrom, and growth SiN layer uses Disilicoethane, and flow is 80sccm.
In above-mentioned LED epitaxial structure, the growth temperature of described electronic barrier layer is 800-1100 DEG C, and growth pressure is 100-300Torr, grows in nitrogen, hydrogen or hydrogen nitrogen hybird environment.
In above-mentioned LED epitaxial structure, described patterned substrate uses any one in Sapphire Substrate, GaN substrate or Si substrate.
Due to the fact that and have employed said structure, be i.e. long layer of sin/GaN SLs type n-GaN layer in the middle of electronic barrier layer.Present configuration can reduce the piezoelectric polarization between electronic barrier layer and p-type GaN layer, improve the blocking capability of electronics, simultaneously facilitate the transmission in hole, make to produce between front electronic barrier layer and rear electronic barrier layer and SiN/GaN SLs type n-GaN layer two-dimensional hole gas, promote the concentration in hole.And defect can be covered, to improve internal quantum efficiency by the SiN layer in SiN/GaN SLs type n-GaN layer.Compared with the existing technology, the present invention can be effectively improved brightness and the antistatic effect of LED.
The present invention will be further described with detailed description of the invention below in conjunction with the accompanying drawings.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of LED epitaxial structure in the embodiment of the present invention.
Detailed description of the invention
Referring to Fig. 1, it is shown that SiN/GaN SLs type n-GaN layer 62 in LED epitaxial structure of the present invention and grows the schematic diagram in four cycles.LED epitaxial structure of the present invention includes patterned substrate 1, GaN cushion 2, layer of undoped gan 3, N-type GaN layer 4, active area 5, electronic barrier layer 61, p-type GaN layer 10 and p-type contact layer 11 the most successively.Patterned substrate 1 uses any one in Sapphire Substrate, GaN substrate or Si substrate.Electronic barrier layer 61 includes front electronic barrier layer 6, SiN/GaN SLs type n-GaN layer 62 and rear electronic barrier layer 9 the most successively.SiN/GaN SLs type n-GaN layer 62 includes SiN layer 7 and the GaN layer 8 of alternating growth the most successively.SiN layer 7 and GaN layer 8 alternating growth cycle are 4-20 cycle, and SiN layer 7 growth time is 10-50sec, and GaN layer 8 thickness is 10-50 angstrom, and growth SiN layer 7 uses Disilicoethane, and flow is 80sccm.The growth temperature of electronic barrier layer 61 is 800-1100 DEG C, and growth pressure is 100-300Torr, grows in nitrogen, hydrogen or hydrogen nitrogen hybird environment.
The present invention can improve the LED epitaxial structure on internal quantum efficiency having electronic barrier layer and following several ways can be used to grow:
Embodiment one:
(1) patterned substrate 1 carrying out at 1000 DEG C high-temperature cleaning process, the time is 10min, then carries out nitrogen treatment.
(2) temperature being reduced to 500 DEG C, grow GaN cushion 2, thickness is 100 angstroms, and pressure is 300Torr.
(3) obstructed TMGa, is increased to 1000 DEG C by temperature, makes annealing treatment GaN cushion 2, and the time is 3min, then passes to TMGa and grows layer of undoped gan 3, and thickness is 0.5 μm, and pressure is 300Torr.
(4) being passed through Disilicoethane, temperature is 1000 DEG C, grows N-type GaN layer 4, and thickness 1.5 μm, pressure is 100Torr.
(5) after N-type GaN layer 4 growth terminates, growing active area 5, active area 5 is by InxGa (1-x) N/GaN
(0 < x < 2) MQW is constituted, and MQW periodicity is 6, and InGaN growth temperature is 600 DEG C, and GaN growth temperature is 700 DEG C, and MQW periodic thickness is 100 angstroms, and pressure is 200Torr.
(6) after active area 5 growth terminates, temperature is increased to 800 DEG C, carries out the growth of electronic barrier layer 61, and growth pressure is 100Torr, is provided with SiN/GaN SLs type n-GaN layer 62 in the middle of electronic barrier layer 61.The growth pattern of electronic barrier layer 61 is electronic barrier layer 6 before first growth, thickness is 100 angstroms, alternating growth SiN/GaN SLs type n-GaN layer 62 includes again SIN layer 7 and GaN layer 8, periodicity is 4, and SiN layer 7 growth time is 10sec, the thickness of GaN layer 8 is 10 angstroms, silicon source used by growth SiN is Disilicoethane, and flow is after the growth of 80sccm, SiN/GaN SLs type n-GaN terminates, finally carrying out the growth of rear electronic barrier layer 9, thickness is 100 angstroms.
(7) temperature is increased to 1000 DEG C, carries out the growth of p-type GaN layer 10, and growth pressure is 100Torr, and thickness is 100nm.
(8), after p-type GaN layer 10 growth terminates, growing P-type contact layer 11, growth temperature is 1000 DEG C, and thickness is 10nm.
(9) after epitaxial growth terminates, temperature is down to 600 DEG C, carries out activation processing under the conditions of purity nitrogen, and the time continues 10min, is then down to room temperature, finally gives LED.
Embodiment two:
(1) patterned substrate 1 carrying out at 1100 DEG C high-temperature cleaning process, the time is 20min, then carries out nitrogen treatment.
(2) temperature being reduced to 600 DEG C, grow GaN cushion 2, thickness is 200 angstroms, and pressure is 500Torr.
(3) obstructed TMGa, is increased to 1100 DEG C by temperature, makes annealing treatment GaN cushion 2, and the time is 5min, then passes to TMGa and grows layer of undoped gan 3, and thickness is 1.5 μm, and pressure is 400Torr.
(4) being passed through Disilicoethane, temperature is 1100 DEG C, grows N-type GaN layer 4, and thickness 2.5 μm, pressure is 200Torr.
(5) after N-type GaN layer 4 growth terminates, growing active area 5, active area 5 is by InxGa (1-x) N/GaN
(0 < x < 2) MQW is constituted, and MQW periodicity is 12, and InGaN growth temperature is 700 DEG C, and GaN growth temperature is 800 DEG C, and MQW periodic thickness is 150 angstroms, and pressure is 300Torr.
(6) after active area 5 growth terminates, temperature is increased to 950 DEG C, carries out the growth of electronic barrier layer 61, and growth pressure is 200Torr, is provided with SiN/GaN SLs type n-GaN layer 62 in the middle of electronic barrier layer 61.The growth pattern of electronic barrier layer 61 is electronic barrier layer 6 before first growth, thickness is 150 angstroms, alternating growth SiN/GaN SLs type n-GaN layer 62 includes again SIN layer 7 and GaN layer 8, periodicity is 12, and SiN layer 7 growth time is 30sec, the thickness of GaN layer 8 is 30 angstroms, silicon source used by growth SiN is Disilicoethane, and flow is after the growth of 80sccm, SiN/GaN SLs type n-GaN terminates, finally carrying out the growth of rear electronic barrier layer 9, thickness is 150 angstroms.
(7) temperature is increased to 1200 DEG C, carries out the growth of p-type GaN layer 10, and growth pressure is 200Torr, and thickness is 300nm.
(8), after p-type GaN layer 10 growth terminates, growing P-type contact layer 11, growth temperature is 1100 DEG C, and thickness is 30nm.
(9) after epitaxial growth terminates, temperature is down to 700 DEG C, carries out activation processing under the conditions of purity nitrogen, and the time continues 20min, is then down to room temperature, finally gives LED.
Embodiment three:
(1) patterned substrate 1 carrying out at 1200 DEG C high-temperature cleaning process, the time is 30min, then carries out nitrogen treatment.
(2) temperature being reduced to 700 DEG C, grow GaN cushion 2, thickness is 300 angstroms, and pressure is 600Torr.
(3) obstructed TMGa, is increased to 1200 DEG C by temperature, makes annealing treatment GaN cushion 2, and the time is 6min, then passes to TMGa and grows layer of undoped gan 3, and thickness is 2 μm, and pressure is 500Torr.
(4) being passed through Disilicoethane, temperature is 1200 DEG C, grows N-type GaN layer 4, and thickness 4 μm, pressure is 300Torr.
(5) after N-type GaN layer 4 growth terminates, growing active area 5, active area 5 is by InxGa (1-x) N/GaN
(0 < x < 2) MQW is constituted, and MQW periodicity is 18, and InGaN growth temperature is 800 DEG C, and GaN growth temperature is 900 DEG C, and MQW periodic thickness is 200 angstroms, and pressure is 400Torr.
(6) after active area 5 growth terminates, temperature is increased to 1100 DEG C, carries out the growth of electronic barrier layer 61, and growth pressure is 300Torr, is provided with SiN/GaN SLs type n-GaN layer 62 in the middle of electronic barrier layer 61.The growth pattern of electronic barrier layer 61 is electronic barrier layer 6 before first growth, thickness is 200 angstroms, alternating growth SiN/GaN SLs type n-GaN layer 62 includes again SIN layer 7 and GaN layer 8, periodicity is 20, and SiN layer 7 growth time is 50sec, the thickness of GaN layer 8 is 50 angstroms, silicon source used by growth SiN is Disilicoethane, and flow is after the growth of 80sccm, SiN/GaN SLs type n-GaN terminates, finally carrying out the growth of rear electronic barrier layer 9, thickness is 200 angstroms.
(7) temperature is increased to 1300 DEG C, carries out the growth of p-type GaN layer 10, and growth pressure is 300Torr, and thickness is 500nm.
(8), after p-type GaN layer 10 growth terminates, growing P-type contact layer 11, growth temperature is 1300 DEG C, and thickness is 50nm.
(9) after epitaxial growth terminates, temperature is down to 800 DEG C, carries out activation processing under the conditions of purity nitrogen, and the time continues 30min, is then down to room temperature, finally gives LED.
The foregoing is only the specific embodiment of the present invention, but do not limit the present invention with this.All within the scope of technical solution of the present invention, the obvious technical scheme such as any amendment that those skilled in the art is made, equivalent, the scope of protection of the invention all should be belonged to.
Claims (4)
1. the LED epitaxial structure that can improve internal quantum efficiency having electronic barrier layer, it includes patterned substrate (1), GaN cushion (2), layer of undoped gan (3), N-type GaN layer (4), active area (5), electronic barrier layer (61), p-type GaN layer (10) and p-type contact layer (11) the most successively, it is characterised in that: described electronic barrier layer (61) includes front electronic barrier layer (6), SiN/GaN SLs type n-GaN layer (62) and rear electronic barrier layer (9) the most successively；Described SiN/GaN SLs type n-GaN layer (62) includes SiN layer (7) and the GaN layer (8) of alternating growth the most successively.
The LED epitaxial structure improving internal quantum efficiency having electronic barrier layer the most according to claim 1, it is characterized in that: described SiN layer (7) and GaN layer (8) alternating growth cycle are 4-20 cycle, SiN layer (7) growth time is 10-50sec, GaN layer (8) thickness is 10-50 angstrom, growth SiN layer (7) uses Disilicoethane, and flow is 80sccm.
The LED epitaxial structure improving internal quantum efficiency having electronic barrier layer the most according to claim 1 and 2, it is characterized in that: the growth temperature of described electronic barrier layer (61) is 800-1100 DEG C, growth pressure is 100-300Torr, grows in nitrogen, hydrogen or hydrogen nitrogen hybird environment.
The LED epitaxial structure improving internal quantum efficiency having electronic barrier layer the most according to claim 3, it is characterised in that: described patterned substrate (1) uses any one in Sapphire Substrate, GaN substrate or Si substrate.
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Cited By (4)
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| CN108767079A (en) * | 2018-05-31 | 2018-11-06 | 扬州乾照光电有限公司 | LED epitaxial structure and growing method based on graphene substrate and LED |
| CN109273569A (en) * | 2018-08-31 | 2019-01-25 | 华灿光电（浙江）有限公司 | A kind of gallium nitride based LED epitaxial slice and preparation method thereof |
| CN113206175A (en) * | 2021-03-19 | 2021-08-03 | 华灿光电（浙江）有限公司 | Light emitting diode epitaxial wafer and preparation method thereof |
| US12051724B2 (en) | 2021-10-29 | 2024-07-30 | Globalwafers Co., Ltd. | Semiconductor epitaxy structure |
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| CN104409586A (en) * | 2014-11-13 | 2015-03-11 | 湘能华磊光电股份有限公司 | GaN-based III-V compound semiconductor LED (light emitting diode) epitaxial wafer and production method thereof |
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Application publication date: 20170104 |