CN111063772A - High-luminous-efficiency ultraviolet LED epitaxial structure - Google Patents
High-luminous-efficiency ultraviolet LED epitaxial structure Download PDFInfo
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- 230000000903 blocking effect Effects 0.000 claims abstract description 27
- 239000000758 substrate Substances 0.000 claims abstract description 9
- 230000000737 periodic effect Effects 0.000 claims description 5
- 230000004913 activation Effects 0.000 abstract description 4
- 230000010287 polarization Effects 0.000 abstract description 4
- 230000002269 spontaneous effect Effects 0.000 abstract description 3
- 230000005684 electric field Effects 0.000 abstract description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 13
- 239000011777 magnesium Substances 0.000 description 9
- 230000004888 barrier function Effects 0.000 description 8
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 7
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 6
- 230000007480 spreading Effects 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 239000012159 carrier gas Substances 0.000 description 4
- 239000002019 doping agent Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 4
- 229910021529 ammonia Inorganic materials 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000005034 decoration Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 229910052706 scandium Inorganic materials 0.000 description 2
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 2
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 description 2
- YRAJNWYBUCUFBD-UHFFFAOYSA-N 2,2,6,6-tetramethylheptane-3,5-dione Chemical compound CC(C)(C)C(=O)CC(=O)C(C)(C)C YRAJNWYBUCUFBD-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000002784 hot electron Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
- H01L33/145—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
- H01L33/325—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen characterised by the doping materials
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Abstract
The invention provides a high-luminous-efficiency ultraviolet LED epitaxial structure, which comprises: the stress control layer, the n-type current expansion layer, the active region light emitting layer, the electron blocking layer and the p-type current expansion layer are sequentially grown on the surface of the growth substrate; wherein the electron blocking layer is formed by ScaAl1‑aPeriodic structure of N layer and GaN layer, 0.15<a<0.20. In ScAlN/GaN short-period superlattice (Sc)aAl1‑aPeriodic structure formed by the N layer and the GaN layer), the energy band of the very thin ScAlN layer can be bent enough to generate a very large spontaneous polarization electric field GaN layer, so that the activation energy of Mg is reduced, a high-concentration hole is obtained, and the photoelectric efficiency of the LED is effectively improved.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to an ultraviolet LED epitaxial structure with high luminous efficiency.
Background
GaN-based LEDs typically employ a Mg-doped p-type wide bandgap AlGaN layer as an electron blocking layer over a multiple quantum well barrier structure. Although the leakage of hot electrons to the p layer can be effectively blocked, the hole concentration of the p-type AlGaN is low, and the LED luminous efficiency is not kept under the high-current working condition of the LED. Recently, a short period superlattice structure based on p-type AlGaN/GaN is beginning to be used as an electron blocking layer of LEDs. In the p-type AlGaN/GaN short-period superlattice structure, the energy band of the GaN layer is bent by a polarization electric field, and the activation energy of Mg is reduced, so that holes with higher concentration are generated in the GaN layer.
However, the p-type AlGaN/GaN short-period superlattice electron blocking layer has two disadvantages. First, in order to bend the energy band of the GaN layer enough to lower the activation energy of Mg, the thickness of the AlGaN layer needs to be controlled in the range of 4nm to 8nm, which hinders the transport of holes in the vertical direction. Secondly, stress still exists between the AlGaN/GaN short-period superlattice and the last GaN barrier of the quantum well, so that the height of the AlGaN barrier is reduced, and the electron blocking effect is weakened.
Disclosure of Invention
In order to overcome the defects, the invention provides the high-luminous-efficiency ultraviolet LED epitaxial structure, and the luminous efficiency of the ultraviolet LED is effectively improved.
The technical scheme provided by the invention is as follows:
an epitaxial structure, comprising: the stress control layer, the n-type current expansion layer, the active region light emitting layer, the electron blocking layer and the p-type current expansion layer are sequentially grown on the surface of the growth substrate; wherein the electron blocking layer is formed by ScaAl1-aPeriodic structure of N layer and GaN layer, 0.15<a<0.20。
Further preferably, the electron blocking layer is formed by 6-9 ScaAl1-aAnd the N layer and the GaN layer form a periodic structure.
Further preferably, the ScaAl1-aThe thickness of the N layer is 2-4 nm, and the thickness of the GaN layer is 2-4 nm.
Further preferably, the electron blocking layer is doped with a dopant with a concentration of 9 × 1019～2×1020cm-2Mg in between.
In the high-luminous-efficiency ultraviolet LED epitaxial structure provided by the invention, the atomic radius of a rare earth element scandium (Sc) is larger than that of Al, so that larger lattice distortion can be generated in the ScAlN material. Meanwhile, the electronegativity of scandium is small, so that the ionic bond proportion in the ScAlN layer can be increased. These two points make the ScAlN layer have high spontaneous polarization coefficient, so that the ScAlN/GaN short period superlattice (Sc)aAl1-aA periphery formed by N layer and GaN layerPeriodic structure), a very thin layer of ScAlN can produce a large enough bending of the energy band of the spontaneous polarization electro-field GaN layer, thereby reducing the activation energy of Mg and obtaining high concentration holes. In addition, since the thickness of the ScAlN is thin, holes can be efficiently transported in the vertical direction by a tunneling mechanism. Moreover, the Sc component is ScAlN with the content of 18% and GaN, lattice matching on a heterojunction interface can be realized, interface stress is eliminated, the reduction of the ScAlN barrier height is avoided, good electronic blocking capability is kept, and the photoelectric efficiency of the LED is effectively improved.
Drawings
FIG. 1 is a schematic view of an epitaxial structure of a high luminous efficiency UV LED according to the present invention;
FIG. 2 is a schematic diagram of an example electron blocking layer structure.
Reference numerals:
1-growth substrate layer, 2-stress control layer, 3-n type current spreading layer, 4-active region light emitting layer, 5-electron blocking layer and 6-p type current spreading layer.
Detailed Description
In order to more clearly illustrate the embodiment of the present invention or the technical solutions in the prior art, the following description will explain embodiments of the present invention with reference to the accompanying drawings. It is obvious that the drawings in the following description are only some examples of the invention, and that for a person skilled in the art, other drawings and embodiments can be derived from them without inventive effort.
Fig. 1 is a schematic view of an epitaxial structure of a high-luminous-efficiency ultraviolet LED provided by the present invention, and as can be seen from the diagram, the epitaxial structure includes: a stress control layer 2, an n-type current spreading layer 3, an active region light emitting layer 4, an electron blocking layer 5 and a p-type current spreading layer 6 which are sequentially grown on the surface of a growth substrate 1 (a silicon substrate layer in the figure); wherein, as shown in FIG. 2, the electron blocking layer is formed by ScaAl1-aPeriodic structure of N layer and GaN layer, 0.15<a<0.20. Specifically, the electron blocking layer consists of 6-9 ScaAl1- aA periodic structure formed by an N layer and a GaN layer, ScaAl1-aThe thickness of the N layer is 2And the thickness of the GaN layer is about 4nm, and the thickness of the GaN layer is about 2-4 nm. And the electron blocking layer is doped with a dopant concentration of 9 × 1019～2×1020cm-2Mg in between. In one example, the Sc component is 18%, lattice matching of ScAlN and GaN on a heterojunction interface can be realized, interface stress is eliminated, reduction of ScAlN barrier height is avoided, good electronic blocking capability is kept, and photoelectric efficiency of the LED is effectively improved.
In one example, MOCVD growth equipment is used, a Si (111) substrate is selected as a silicon substrate layer 1, an undoped AlN/AlGaN layer is selected as a stress control layer 2, a Si-doped AlGaN layer is selected as an n-type current expansion layer 3, a multi-quantum well structure consisting of an InGaN quantum well layer and an AlGaN barrier layer is selected as an active region light-emitting layer 4, and GaN/ScaAl1-aThe N superlattice structure is used as an electron blocking layer 5, and the Mg-doped AlGaN layer is used as a p-type current expansion layer 6. In the preparation process:
firstly, a silicon substrate layer 1 is placed in an MOCVD reaction chamber, the temperature is raised to 1100 ℃, and H is introduced2And carrying out high-temperature surface cleaning treatment.
Then, setting the temperature of the reaction chamber at 800-1200 ℃, and introducing trimethylaluminum (TMAl) and ammonia (NH) into the reaction chamber3) In H2Growing a layer of AlN as a carrier gas, and passing trimethylaluminum (TMAl), trimethylgallium (TMGa), ammonia (NH) over AlN under the same conditions3) One layer of AlGaN is grown to collectively form the stress control layer 2.
Then, Silane (SiH) is added4) As a dopant, the doping concentration is 8X 1018cm-3The growth temperature is 900-1100 ℃, the growth of the n-type current expansion layer 3 is realized, and the grown n-type current expansion layer 3 is n-type Al with 7 percent of Al component0.07Ga0.93And the thickness of the N layer is 3000 nm.
Then, nitrogen (N) is added2) As carrier gas, In with a thickness of 3nm is grown at 800 deg.C0.02Ga0.98After the N quantum well layer is formed, the temperature of the reaction chamber is raised to 950 ℃, and trimethylaluminum (TMAl), triethylgallium (TEGa) and ammonia (NH) are introduced into the reaction chamber3) Growing Al with thickness of 15nm0.15Ga0.85And (7) repeatedly growing an N barrier layer to finish the preparation of the active light-emitting layer 4. Utensil for cleaning buttock7 pairs of In the active light-emitting layer 40.02Ga0.98N/Al0.15Ga0.85The N multi-quantum well structure has the light-emitting wavelength of 365nm and belongs to a near ultraviolet band. Al (Al)0.15Ga0.85The doping concentration of silicon in the N quantum barrier is 2 x 1018cm-3，In0.02Ga0.98The N quantum well is unintentionally doped.
Then, nitrogen is used as carrier gas, the temperature of the reaction chamber is 900 ℃, TMAl and Sc (TMHD) are introduced into the reaction chamber3、NH3Growing Sc with a thickness of 2.5nm0.15Al0.85N layers; introducing TMGa and NH at the same temperature3Growing GaN with the thickness of 2.5nm to form a periodic structure; introducing magnesium metallocene (Cp) in the whole process2Mg) with a doping concentration of 1.5X 1020cm-3(ii) a Thereafter repeating the growth of 7 pairs of ScaAl1-aThe periodic structure formed by the N layer and the GaN layer results in the electron blocking layer 5.
Finally, with H2Or N2TMAl, TMGa and NH are introduced as carrier gas3And with magnesium bis-cyclopentadienyl (Cp)2Mg) as a dopant at a temperature of 900 to 1000 ℃ for epitaxial growth to form a p-type current spreading layer 6 with a thickness of 80 nm.
Ultraviolet LED chips (including GaN/Sc in this example)aAl1-aThe ultraviolet LED chip without the electron blocking layer and the ultraviolet LED chip without the electron blocking layer) were cut to 1.125 × 1.125mm, and the optical power measurement was performed at 350mA current, in this example, the optical power of the LED chip was 432mW, and the optical power of the ultraviolet LED chip without the electron blocking layer was 403 mW.
It should be noted that the above embodiments can be freely combined as necessary. The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, various modifications and decorations can be made without departing from the principle of the present invention, and these modifications and decorations should also be regarded as the protection scope of the present invention.
Claims (4)
1. A high luminous efficiency ultraviolet LED epitaxial structure, comprising: the stress control layer, the n-type current expansion layer, the active region light emitting layer, the electron blocking layer and the p-type current expansion layer are sequentially grown on the surface of the growth substrate; wherein the electron blocking layer is formed by ScaAl1-aPeriodic structure of N layer and GaN layer, 0.15<a<0.20。
2. The high luminous efficiency ultraviolet LED epitaxial structure of claim 1, wherein the electron blocking layer is made of 6 to 9 ScaAl1-aAnd the N layer and the GaN layer form a periodic structure.
3. The high luminous efficiency ultraviolet LED epitaxial structure of claim 1 or 2, wherein the Sc isaAl1-aThe thickness of the N layer is 2-4 nm, and the thickness of the GaN layer is 2-4 nm.
4. The high luminous efficiency ultraviolet LED epitaxial structure of claim 1 or 2, wherein the electron blocking layer is doped with a concentration of 9 x 1019～2×1020cm-2Mg in between.
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111785794A (en) * | 2020-07-20 | 2020-10-16 | 西安电子科技大学 | N-polarity InGaN-based solar cell based on enhanced electric field of ScAlN and InAlN polarized insertion layer |
| CN113471343A (en) * | 2021-07-15 | 2021-10-01 | 西安电子科技大学芜湖研究院 | GaN green light emitting diode based on ScAlGaN super-polarized n-type layer and preparation method thereof |
| CN114038958A (en) * | 2021-08-05 | 2022-02-11 | 重庆康佳光电技术研究院有限公司 | Light-emitting chip epitaxial wafer, manufacturing method thereof and light-emitting chip |
| CN114256395A (en) * | 2022-03-01 | 2022-03-29 | 江西兆驰半导体有限公司 | LED epitaxial wafer, epitaxial growth method and LED chip |
| CN116581217A (en) * | 2023-07-13 | 2023-08-11 | 江西兆驰半导体有限公司 | Light-emitting diode epitaxial wafer, preparation method thereof and light-emitting diode |
| CN116741905A (en) * | 2023-08-11 | 2023-09-12 | 江西兆驰半导体有限公司 | Light-emitting diode epitaxial wafer, preparation method thereof and light-emitting diode |
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| CN109192831A (en) * | 2018-07-20 | 2019-01-11 | 华灿光电（浙江）有限公司 | A kind of gallium nitride based LED epitaxial slice and preparation method thereof |
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Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109192831A (en) * | 2018-07-20 | 2019-01-11 | 华灿光电（浙江）有限公司 | A kind of gallium nitride based LED epitaxial slice and preparation method thereof |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111785794A (en) * | 2020-07-20 | 2020-10-16 | 西安电子科技大学 | N-polarity InGaN-based solar cell based on enhanced electric field of ScAlN and InAlN polarized insertion layer |
| CN111785794B (en) * | 2020-07-20 | 2023-09-08 | 西安电子科技大学 | N-polarity InGaN-based solar cell based on ScAlN and InAlN polarization insertion layer enhanced electric field |
| CN113471343A (en) * | 2021-07-15 | 2021-10-01 | 西安电子科技大学芜湖研究院 | GaN green light emitting diode based on ScAlGaN super-polarized n-type layer and preparation method thereof |
| CN113471343B (en) * | 2021-07-15 | 2023-11-10 | 西安电子科技大学芜湖研究院 | GaN green light emitting diode based on ScAlGaN super-polarized n-type layer and preparation method thereof |
| CN114038958A (en) * | 2021-08-05 | 2022-02-11 | 重庆康佳光电技术研究院有限公司 | Light-emitting chip epitaxial wafer, manufacturing method thereof and light-emitting chip |
| CN114256395A (en) * | 2022-03-01 | 2022-03-29 | 江西兆驰半导体有限公司 | LED epitaxial wafer, epitaxial growth method and LED chip |
| CN116581217A (en) * | 2023-07-13 | 2023-08-11 | 江西兆驰半导体有限公司 | Light-emitting diode epitaxial wafer, preparation method thereof and light-emitting diode |
| CN116581217B (en) * | 2023-07-13 | 2023-09-12 | 江西兆驰半导体有限公司 | Light-emitting diode epitaxial wafer, preparation method thereof and light-emitting diode |
| CN116741905A (en) * | 2023-08-11 | 2023-09-12 | 江西兆驰半导体有限公司 | Light-emitting diode epitaxial wafer, preparation method thereof and light-emitting diode |
| CN116741905B (en) * | 2023-08-11 | 2023-10-20 | 江西兆驰半导体有限公司 | Light-emitting diode epitaxial wafer, preparation method thereof and light-emitting diode |
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Application publication date: 20200424 |