CN102881788A - Epitaxial growth method for improving GaN-based light-emitting diode (LED) quantum well structure to improve carrier recombination efficiency - Google Patents

Epitaxial growth method for improving GaN-based light-emitting diode (LED) quantum well structure to improve carrier recombination efficiency Download PDF

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CN102881788A
CN102881788A CN2012103631177A CN201210363117A CN102881788A CN 102881788 A CN102881788 A CN 102881788A CN 2012103631177 A CN2012103631177 A CN 2012103631177A CN 201210363117 A CN201210363117 A CN 201210363117A CN 102881788 A CN102881788 A CN 102881788A
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李永
李刚
郭丽彬
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Hefei Irico Epilight Technology Co Ltd
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Abstract

The invention discloses an epitaxial growth method for improving a GaN-based light-emitting diode (LED) quantum well structure to improve carrier recombination efficiency. The method comprises the following steps of: annealing a substrate, and nitriding; growing a low temperature GaN buffer layer; growing a non-doped high temperature GaN buffer layer; growing a Si-doped N-type GaN layer with stable doping density; growing a low temperature shallow quantum well; growing a low temperature multi-quantum well luminous layer, wherein the multi-quantum well luminous layer is divided into three parts which grow under different growth conditions; growing a low temperature P-type GaN layer by taking nitrogen as carrier gas; heating to grow a P-type AlGaN electron barrier layer; growing a high temperature P-type GaN layer; growing a P-type contact layer; and reducing the temperature of a reaction chamber, annealing, and cooling to room temperature. When multi-quantum wells are grown, the position of a PN junction can be regulated in an optimized way, more carriers are captured and recombined, the luminous efficiency is improved, the inner quantum well effect is increased, and a high luminous intensity GaN-based LED is obtained.

Description

A kind of epitaxial growth method that improves GaN base LED quantum well structure raising carrier combined efficiency
Technical field
The invention belongs to gallium nitride based technical field of material, particularly a kind of epitaxial growth method that improves GaN base LED quantum well structure raising carrier combined efficiency.
Background technology
The GaN sill is ionic crystals, because positive and negative charge does not overlap, forms spontaneous polarization; Because the lattice between InGaN and the GaN material is adaptive, can cause piezoelectric polarization again in addition, and then form piezoelectric polarization fields.The existence of polarization field is on the one hand so that the equivalent energy gap of quantum well reduces the emission wavelength red shift; The overlapping meeting of order one side electronics and hole wave function reduces, and reduces its radiation recombination probability.Affect the another one reason of quantum well radiation efficient: N district injected electrons has very large carrier mobility and concentration, under the driving of large electric current, can cross the hole-recombination in quantum well region and P district, cause non-radiative compound, so that the reduction of luminous efficiency, and the effective mass in hole is larger, and its mobility and carrier concentration are all lower, away from the hole distribution in P district seldom, whole well region hole distribution is very inhomogeneous, causes the radiation recombination probability to descend.
For the optimization of electron concentration, mainly used at present the methods such as Electron Extended layer, electronic barrier layer and the asymmetric resonant tunneling structure of electric charge, used the less methods such as last one deck base of thickness in the distribution in hole.Said method has improved the radiation recombination efficiency of quantum well to a certain extent, but effect is limited.
Summary of the invention
Above-mentioned shortcoming and defect for the prior art existence, the invention provides the epitaxial growth method that a kind of GaN of improvement base LED quantum well structure improves the carrier combined efficiency, the present invention can obtain the quantum well structure gallium nitride-based material of high-quality, high carrier combined efficiency, thereby obtains the GaN series LED of high luminous intensity.
The present invention is achieved through the following technical solutions:
A kind of epitaxial growth method that improves GaN base LED quantum well structure raising carrier combined efficiency may further comprise the steps:
Step 1 was annealed substrate 1 1-10 minute in hydrogen atmosphere, clean described substrate 1 surface, and temperature is controlled between 1050-1080 ℃, then carries out nitrogen treatment;
Step 2, between drop in temperature to 450 ℃-650 ℃, the thick low temperature GaN resilient coating 2 of growth 15-35nm, growth pressure is controlled between the 4000-760 Torr, and V/III mol ratio is between 500-3200;
Step 3, after described low temperature GaN resilient coating 2 growths finish, its original position is carried out thermal anneal process, stop to pass into TMGa, the temperature of described substrate 1 is increased between 950-1200 ℃, annealing time is between 5min to 10min, after the annealing, between 1000-1200 ℃, growth thickness is the unadulterated high temperature GaN resilient coating 3 between 0.8 μ m-4 μ m with adjustment, growth pressure is between 100Torr-600 Torr, and V/III mol ratio is between 300-3300;
Step 4, after described unadulterated high temperature GaN resilient coating 3 growths finish, the N-type GaN layer 4 that the Si that growth one deck doping content is stable mixes, thickness is between 1.0-5.0 μ m, growth temperature is between 1000 ℃-1200 ℃, growth pressure is between 50-550 Torr, and V/III mol ratio is between 300-3300;
Step 5, after N-type GaN layer 4 growth that described Si mixes finish, the shallow quantum well 5 of growing low temperature, described shallow quantum well 5 is by the In in 5-15 cycle xGa 1-XN (0.04＜x＜0.4)/GaN Multiple Quantum Well forms, and the thickness of described shallow quantum well 5 is between 3nm-5nm, and growth temperature is between 720 ℃-920 ℃, and pressure is between 100Torr-600 Torr, and V/III mol ratio is between 300-5000;
Step 6, after described shallow quantum well 5 growths finish, beginning growing low temperature multiple quantum well light emitting layer 6, described multiple quantum well light emitting layer 6 is by the In in 3-15 cycle yGa 1-yN (x＜y＜1)/GaN Multiple Quantum Well forms, the growth pattern of described Multiple Quantum Well is the class tapered in form, the molar constituent content of In remains unchanged between 10%-50% in the described Multiple Quantum Well, the thickness of described Multiple Quantum Well is between 2nm-5nm, growth temperature is between 720 ℃-820 ℃, growth pressure is between 200Torr-500 Torr, and V/III mol ratio is between 400-5300; Building layer minute three part grows, be followed successively by sequentially quantum and build 6a, quantum base 6b and quantum base 6c, and described quantum is built 6a and quantum base 6b all adopts the gradual mode in MO source to grow, all quantum build growth temperature between 820-920 ℃, pressure is between 200Torr-500 Torr, and V/III mol ratio is between 400-5300;
Step 7, after described multiple quantum well light emitting layer 6 growth finish, low temperature P type GaN layer 7 between the growth thickness 10nm-100nm, growth temperature is between 500 ℃-800 ℃, growth time is between 5 minutes-20 minutes, and pressure is between 100Torr-500 Torr, and V/III mol ratio is between 300-5300, in the process of described growing low temperature P type GaN layer 7, with N 2As carrier gas, and doped dielectric two luxuriant magnesium;
Step 8, after described low temperature P type GaN layer 7 growth finish, temperature is risen between 900 ℃-1100 ℃, P type AlGaN electronic barrier layer 8 between the growth thickness 10nm-100nm, growth pressure is between 50Torr-400 Torr, growth time is between 5-15 minute, V/III mol ratio is between 1000-20000, the molar constituent content of Al in the described P type AlGaN electronic barrier layer 8 is controlled between the 15%-40%, the energy gap of described P type AlGaN electronic barrier layer 8 is greater than the energy gap at last base, and the energy gap of described P type AlGaN electronic barrier layer 8 is controlled between 4ev and the 5.5ev;
Step 9, after described P type AlGaN electronic barrier layer 8 growths finish, high temperature P type GaN layer 9 between growth a layer thickness 0.1um-0.9 um, its growth temperature is between 850-1090 ℃, growth pressure is between 100Torr-450 Torr, growth time is between 5-20min, and V/III mol ratio is between 300-5000;
Step 10, after described high temperature P type GaN layer 9 growth finish, P type contact layer 10 between growth a layer thickness 5nm-30nm, its growth temperature is between 850 ℃-1050 ℃, pressure is between 100Torr-500 Torr, growth time is between 1-10min, and V/III mol ratio is between 1000-20000;
Step 11 is down to the temperature of reative cell between 650 ℃-800 ℃, adopts annealing in process 5-15min in the pure nitrogen gas atmosphere, then is down to room temperature, namely get as shown in Figure 1 the LED epitaxial structure.
Preferably, the material of described substrate 1 is sapphire, GaN monocrystalline, monocrystalline silicon or single-crystal silicon carbide, to be fit to GaN and semiconductor epitaxial Material growth thereof.
Preferably, described quantum is built the 6a growth thickness between 10nm-15nm, and described quantum is built between the 6b growth thickness 7nm-11.5nm, and described quantum is built between the 6c growth thickness 8nm-12nm.Further preferred, it is identical that described quantum is built the MO source gaseous species that passes into when 6a builds the 6b growth with described quantum, described quantum is built 6a and described quantum and is built the attenuate mode of the thickness of 6b and realize by the intake that reduces MO source and gas, the MO source pass into time-preserving.Further preferred, it is different from the gas that described quantum base 6a and described quantum base 6b pass into that described quantum is built 6c, and the attenuate mode that described quantum is built 6c thickness realized by the time that passes into that reduces the MO source.
The present invention is with high-purity hydrogen (H 2) or nitrogen (N 2) as carrier gas, with trimethyl gallium (TMGa), triethyl-gallium (TEGa), trimethyl aluminium (TMAl), trimethyl indium (TMIn) and ammonia (NH 3) respectively as Ga, Al, In and N source, with silane (SiH 4) and two luxuriant magnesium (CP 2Mg) respectively as n, p-type dopant.
Beneficial effect of the present invention is:
Compare with the quantum well structure epitaxial growth method of existing GaN series LED, the present invention has adopted compound multi-quantum pit structure, the multiple quantum well light emitting layer adopts three one-step growth methods, be that the multiple quantum well light emitting layer is divided into three parts and grows at different growth conditionss, the trap layer adopts the class tapered in form to grow simultaneously, build layer and adopt the gradual growth pattern in MO source, this growth pattern reduces the piezoelectric effect in the multiple quantum well light emitting district effectively, make electronics and the hole spatially can better be compound, effectively reduce the defect concentration in multiple quantum well light emitting district, improve electronics and hole at the combined efficiency in multiple quantum well light emitting district, thus the luminous intensity and the brightness that improve light-emitting diode;
The electronics that makes Light-Emitting Diode N district is unlikely to move to the P district by the barrier effect of building floor and hole, P district occurs non-radiative compound, the hole in P district can be use up and how be moved to the multiple quantum well light emitting zone, and then multiquantum well region can well be overlapped with the P-N knot, make electronics and the hole band edge radiation recombination of mainly in quantum well, being open to the custom luminous, improved the luminous efficiency of light-emitting diode;
The present invention without specific (special) requirements, can not make subsequently growth and processing step complicated to growth apparatus and process conditions.
Description of drawings
Fig. 1 is the schematic diagram that utilizes the LED epitaxial structure that the present invention prepares;
Fig. 2 is the enlarged drawing of the multiple quantum well light emitting layer among Fig. 1.
Embodiment
The present invention is described in detail below in conjunction with specific embodiment.Following examples will help those skilled in the art further to understand the present invention, but not limit in any form the present invention.Should be pointed out that to those skilled in the art, without departing from the inventive concept of the premise, can also make some distortion and improvement.These all belong to protection scope of the present invention.
Embodiments of the invention utilize Vecco K465 series MOCVD System Implementation.
LED epitaxial structure as shown in Figure 1, order from bottom to top comprises successively: substrate 1, low temperature GaN resilient coating 2, unadulterated high temperature GaN resilient coating 3, the N-type GaN layer 4 that Si mixes, shallow quantum well 5, multiple quantum well light emitting layer 6, low temperature P type GaN layer 7, P type aluminum gallium nitride electronic barrier layer 8, high temperature P type GaN layer 9, P type GaN contact layer 10, wherein the structure of multiple quantum well light emitting layer 6 is divided three parts: first is 2/3rds (8 to 12 mqw light emitting layers) of total luminescent layer quantum well number, build layer and adopt the gradual growth in MO source, the trap layer adopts trapezoidal growth pattern; Second portion is 1/4th (3 to 6 mqw light emitting layers) of total luminescent layer quantum well number, builds layer and adopts the gradual growth pattern in MO source, and build layer attenuate 30%, and the trap layer adopts the trapezoidal growth pattern of class; Third part is an independent quantum well, builds layer and adopts existing growth pattern growth, and the trap layer adopts the trapezoidal growth pattern of class.The growing method of above-mentioned LED epitaxial structure is as follows:
A kind of epitaxial growth method that improves GaN base LED quantum well structure raising carrier combined efficiency comprises the steps:
Step 1, substrate 1 was annealed in hydrogen atmosphere 1-10 minute, clean substrate 1 surface, temperature is controlled between 1050-1080 ℃, then carry out nitrogen treatment, the material of substrate 1 is sapphire, GaN monocrystalline, monocrystalline silicon or single-crystal silicon carbide, to be fit to GaN and semiconductor epitaxial Material growth thereof;
Step 2, between drop in temperature to 450 ℃-650 ℃, the thick low temperature GaN resilient coating 2 of growth 15-35nm, growth pressure is controlled between the 4000-760 Torr, and V/III mol ratio is between 500-3200;
Step 3, after described low temperature GaN resilient coating 2 growths finish, its original position is carried out thermal anneal process, stop to pass into TMGa, the temperature of described substrate 1 is increased between 950-1200 ℃, annealing time is between 5min to 10min, after the annealing, between 1000-1200 ℃, growth thickness is the unadulterated high temperature GaN resilient coating 3 between 0.8 μ m-4 μ m with adjustment, growth pressure is between 100Torr-600 Torr, and V/III mol ratio is between 300-3300;
Step 4, after described unadulterated high temperature GaN resilient coating 3 growths finish, the N-type GaN layer 4 that the Si that growth one deck doping content is stable mixes, thickness is between 1.0-5.0 μ m, growth temperature is between 1000 ℃-1200 ℃, growth pressure is between 50-550 Torr, and V/III mol ratio is between 300-3300;
Step 5, after N-type GaN layer 4 growth that described Si mixes finish, the shallow quantum well 5 of growing low temperature, described shallow quantum well 5 is by the In in 5-15 cycle xGa 1-XN (0.04＜x＜0.4)/GaN Multiple Quantum Well forms, and the thickness of described shallow quantum well 5 is between 3nm-5nm, and growth temperature is between 720 ℃-920 ℃, and pressure is between 100Torr-600 Torr, and V/III mol ratio is between 300-5000;
Step 6, after described shallow quantum well 5 growths finish, beginning growing low temperature multiple quantum well light emitting layer 6, described multiple quantum well light emitting layer 6 is by the In in 3-15 cycle yGa 1-yN (x＜y＜1)/GaN Multiple Quantum Well forms, the growth pattern of described Multiple Quantum Well is the class tapered in form, the molar constituent content of In remains unchanged between 10%-50% in the described Multiple Quantum Well, the thickness of described Multiple Quantum Well is between 2nm-5nm, growth temperature is between 720 ℃-820 ℃, growth pressure is between 200Torr-500 Torr, and V/III mol ratio is between 400-5300; Building layer minute three part grows, be followed successively by sequentially quantum and build 6a, quantum base 6b and quantum base 6c, and described quantum is built 6a and quantum base 6b all adopts the gradual mode in MO source to grow, all quantum build growth temperature between 820-920 ℃, pressure is between 200Torr-500 Torr, and V/III mol ratio is between 400-5300; Described quantum is built the 6a growth thickness between 10nm-15nm, described quantum is built between the 6b growth thickness 7nm-11.5nm, described quantum is built between the 6c growth thickness 8nm-12nm, it is identical that described quantum is built the MO source gaseous species that passes into when 6a builds the 6b growth with described quantum, the attenuate mode that described quantum is built the thickness of 6a and described quantum base 6b realizes by the intake that reduces MO source and gas, the MO source pass into time-preserving, it is different from the gas that described quantum base 6a and described quantum base 6b pass into that described quantum is built 6c, and the attenuate mode that described quantum is built 6c thickness realized by the time that passes into that reduces the MO source;
Step 7, after described multiple quantum well light emitting layer 6 growth finish, low temperature P type GaN layer 7 between the growth thickness 10nm-100nm, growth temperature is between 500 ℃-800 ℃, growth time is between 5 minutes-20 minutes, and pressure is between 100Torr-500 Torr, and V/III mol ratio is between 300-5300, in the process of described growing low temperature P type GaN layer 7, with N 2As carrier gas, and doped dielectric two luxuriant magnesium;
Step 8, after described low temperature P type GaN layer 7 growth finish, temperature is risen between 900 ℃-1100 ℃, P type AlGaN electronic barrier layer 8 between the growth thickness 10nm-100nm, growth pressure is between 50Torr-400 Torr, growth time is between 5-15 minute, V/III mol ratio is between 1000-20000, the molar constituent content of Al in the described P type AlGaN electronic barrier layer 8 is controlled between the 15%-40%, the energy gap of described P type AlGaN electronic barrier layer 8 is greater than the energy gap at last base, and the energy gap of described P type AlGaN electronic barrier layer 8 is controlled between 4ev and the 5.5ev;
Step 9, after described P type AlGaN electronic barrier layer 8 growths finish, high temperature P type GaN layer 9 between growth a layer thickness 0.1um-0.9 um, its growth temperature is between 850-1090 ℃, growth pressure is between 100Torr-450 Torr, growth time is between 5-20min, and V/III mol ratio is between 300-5000;
Step 10, after described high temperature P type GaN layer 9 growth finish, P type contact layer 10 between growth a layer thickness 5nm-30nm, its growth temperature is between 850 ℃-1050 ℃, pressure is between 100Torr-500 Torr, growth time is between 1-10min, and V/III mol ratio is between 1000-20000;
Step 11 is down to the temperature of reative cell between 650 ℃-800 ℃, adopts annealing in process 5-15min in the pure nitrogen gas atmosphere, then is down to room temperature, namely get as shown in Figure 1 the LED epitaxial structure.
Then to the epitaxial wafer (epitaxial structure) of growth clean, the semiconducter process such as deposition, photoetching and etching make single small-size chips.
Present embodiment with high-purity hydrogen or nitrogen as carrier gas, with trimethyl gallium (TMGa), triethyl-gallium (TEGa), trimethyl aluminium (TMAl), trimethyl indium (TMIn) and ammonia (NH 3) respectively as Ga, Al, In and N source, with silane (SiH 4) and two luxuriant magnesium (Cp 2Mg) respectively as n, p-type dopant.
Present embodiment improves growth structure and the method for quantum well, can effectively reduce the defect concentration of quantum well region, improves electronics and hole at the combined efficiency of luminescent quantum well region; Multiquantum well region can well be overlapped with P-N knot, make electronics and the hole band edge radiation recombination of mainly in quantum well, being open to the custom luminous, can improve the luminous efficiency of light-emitting diode; And this improved light emitting diode construction, without specific (special) requirements, can not make subsequently growth and processing step complicated to growth apparatus and process conditions.

Claims (5)

1. one kind is improved the epitaxial growth method that GaN base LED quantum well structure improves the carrier combined efficiency, it is characterized in that, may further comprise the steps:
Step 1 was annealed substrate (1) 1-10 minute in hydrogen atmosphere, clean described substrate (1) surface, and temperature is controlled between 1050-1080 ℃, then carries out nitrogen treatment;
Step 2, between drop in temperature to 450 ℃-650 ℃, the thick low temperature GaN resilient coating (2) of growth 15-35nm, growth pressure is controlled between the 4000-760 Torr, and V/III mol ratio is between 500-3200;
Step 3, after described low temperature GaN resilient coating (2) growth finishes, its original position is carried out thermal anneal process, stop to pass into TMGa, the temperature of described substrate (1) is increased between 950-1200 ℃, annealing time is between 5min to 10min, after the annealing, between 1000-1200 ℃, growth thickness is the unadulterated high temperature GaN resilient coating (3) between 0.8 μ m-4 μ m with adjustment, growth pressure is between 100Torr-600 Torr, and V/III mol ratio is between 300-3300;
Step 4, after described unadulterated high temperature GaN resilient coating (3) growth finishes, the N-type GaN layer (4) that the Si that growth one deck doping content is stable mixes, thickness is between 1.0-5.0 μ m, growth temperature is between 1000 ℃-1200 ℃, growth pressure is between 50-550 Torr, and V/III mol ratio is between 300-3300;
Step 5, after N-type GaN layer (4) growth that described Si mixes finishes, the shallow quantum well of growing low temperature (5), described shallow quantum well (5) is by the In in 5-15 cycle xGa 1-XN (0.04＜x＜0.4)/GaN Multiple Quantum Well forms, and the thickness of described shallow quantum well (5) is between 3nm-5nm, and growth temperature is between 720 ℃-920 ℃, and pressure is between 100Torr-600 Torr, and V/III mol ratio is between 300-5000;
Step 6, after described shallow quantum well (5) growth finishes, beginning growing low temperature multiple quantum well light emitting layer (6), described multiple quantum well light emitting layer (6) is by the In in 3-15 cycle yGa 1-yN (x＜y＜1)/GaN Multiple Quantum Well forms, the growth pattern of described Multiple Quantum Well is the class tapered in form, the molar constituent content of In remains unchanged between 10%-50% in the described Multiple Quantum Well, the thickness of described Multiple Quantum Well is between 2nm-5nm, growth temperature is between 720 ℃-820 ℃, growth pressure is between 200Torr-500 Torr, and V/III mol ratio is between 400-5300; Building layer minute three part grows, be followed successively by sequentially quantum and build (6a), quantum base (6b) and quantum base (6c), and described quantum is built (6a) and quantum base (6b) all adopts the gradual mode in MO source to grow, all quantum build growth temperature between 820-920 ℃, pressure is between 200Torr-500 Torr, and V/III mol ratio is between 400-5300;
Step 7, after described multiple quantum well light emitting layer (6) growth finishes, low temperature P type GaN layer (7) between the growth thickness 10nm-100nm, growth temperature is between 500 ℃-800 ℃, growth time is between 5 minutes-20 minutes, and pressure is between 100Torr-500 Torr, and V/III mol ratio is between 300-5300, in the process of described growing low temperature P type GaN layer (7), with N 2As carrier gas, and doped dielectric two luxuriant magnesium;
Step 8, after described low temperature P type GaN layer (7) growth finishes, temperature is risen between 900 ℃-1100 ℃, P type AlGaN electronic barrier layer (8) between the growth thickness 10nm-100nm, growth pressure is between 50Torr-400 Torr, growth time is between 5-15 minute, V/III mol ratio is between 1000-20000, the molar constituent content of Al in the described P type AlGaN electronic barrier layer (8) is controlled between the 15%-40%, the energy gap of described P type AlGaN electronic barrier layer (8) is greater than the energy gap at last base, and the energy gap of described P type AlGaN electronic barrier layer (8) is controlled between 4ev and the 5.5ev;
Step 9, after described P type AlGaN electronic barrier layer (8) growth finishes, high temperature P type GaN layer (9) between growth a layer thickness 0.1 μ m-0.9 μ m, its growth temperature is between 850-1090 ℃, growth pressure is between 100Torr-450 Torr, growth time is between 5-20min, and V/III mol ratio is between 300-5000;
Step 10, after described high temperature P type GaN layer (9) growth finishes, P type contact layer (10) between growth a layer thickness 5nm-30nm, its growth temperature is between 850 ℃-1050 ℃, pressure is between 100Torr-500 Torr, growth time is between 1-10min, and V/III mol ratio is between 1000-20000;
Step 11 is down to the temperature of reative cell between 650 ℃-800 ℃, adopts annealing in process 5-15min in the pure nitrogen gas atmosphere, then is down to room temperature, and get final product.
2. epitaxial growth method according to claim 1 is characterized in that, the material of described substrate (1) is sapphire, GaN monocrystalline, monocrystalline silicon or single-crystal silicon carbide.
3. epitaxial growth method according to claim 1 and 2, it is characterized in that, described quantum is built (6a) growth thickness between 10nm-15nm, and described quantum is built (6b) growth thickness between 7nm-11.5nm, and described quantum is built (6c) growth thickness between 8nm-12nm.
4. epitaxial growth method according to claim 3, it is characterized in that, it is identical that described quantum is built the MO source gaseous species that passes into when (6a) builds (6b) growth with described quantum, described quantum is built the attenuate mode of thickness that (6a) and described quantum build (6b) by reducing the intake realization of MO source and gas, the MO source pass into time-preserving.
5. epitaxial growth method according to claim 4, it is characterized in that, described quantum is built (6c) and described quantum and is built (6a) and quantum to build the gas that (6b) pass into different, and the attenuate mode of described quantum base (6c) thickness is by the time that the passes into realization in minimizing MO source.
CN2012103631177A 2012-09-26 2012-09-26 Epitaxial growth method for improving GaN-based light-emitting diode (LED) quantum well structure to improve carrier recombination efficiency Pending CN102881788A (en)

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CN106067492A (en) * 2016-08-04 2016-11-02 东莞市中镓半导体科技有限公司 The method preparing gallium nitride light-emitting diode on graphical gallium nitride monocrystal substrate
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Application publication date: 20130116