CN103811600B - A kind of growing method of GaN quantum well structure - Google Patents
A kind of growing method of GaN quantum well structure Download PDFInfo
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- CN103811600B CN103811600B CN201410090733.9A CN201410090733A CN103811600B CN 103811600 B CN103811600 B CN 103811600B CN 201410090733 A CN201410090733 A CN 201410090733A CN 103811600 B CN103811600 B CN 103811600B
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- 238000000034 method Methods 0.000 title claims abstract description 41
- 229910002601 GaN Inorganic materials 0.000 claims abstract description 77
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims abstract description 30
- 229910052733 gallium Inorganic materials 0.000 claims abstract description 20
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 15
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims abstract description 15
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 11
- 238000004140 cleaning Methods 0.000 claims abstract description 10
- 238000005915 ammonolysis reaction Methods 0.000 claims abstract description 9
- 150000004767 nitrides Chemical class 0.000 claims abstract description 6
- 230000004888 barrier function Effects 0.000 claims description 20
- 230000008569 process Effects 0.000 claims description 16
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 229910002704 AlGaN Inorganic materials 0.000 claims description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 5
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 5
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 5
- 230000003044 adaptive effect Effects 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- 229910021529 ammonia Inorganic materials 0.000 claims description 5
- 239000012159 carrier gas Substances 0.000 claims description 5
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 5
- 238000009826 distribution Methods 0.000 claims description 5
- 239000002019 doping agent Substances 0.000 claims description 5
- 239000001257 hydrogen Substances 0.000 claims description 5
- 229910052739 hydrogen Inorganic materials 0.000 claims description 5
- 229910052738 indium Inorganic materials 0.000 claims description 5
- 229910052749 magnesium Inorganic materials 0.000 claims description 5
- 239000011777 magnesium Substances 0.000 claims description 5
- 229910000077 silane Inorganic materials 0.000 claims description 5
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 claims description 5
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 claims description 5
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 claims description 5
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 claims description 5
- 238000005215 recombination Methods 0.000 abstract description 5
- 238000004020 luminiscence type Methods 0.000 abstract description 4
- 230000006798 recombination Effects 0.000 abstract description 4
- -1 SQW compound Chemical class 0.000 abstract description 3
- 239000000203 mixture Substances 0.000 description 8
- 230000005611 electricity Effects 0.000 description 5
- 230000007704 transition Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000004593 Epoxy Substances 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
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- Microelectronics & Electronic Packaging (AREA)
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- Led Devices (AREA)
Abstract
The present invention provides the growing method of a kind of GaN quantum well structure, its GaN quantum well structure is followed successively by substrate from bottom to top, low temperature nitride gallium cushion, n type gallium nitride layer, stage quantum well layer, P type gallium nitride layer and P type contact layer, described growing method comprises the steps: when high pure nitrogen, purify substrate, then Grown high-temperature ammonolysis gallium cushion after cleaning successively, n type gallium nitride layer, stage quantum well layer, P type gallium nitride layer and P type contact layer, TMIn is adulterated by the present invention at trap place, respectively at different pressure, flow, rotating speed, temperature, under the growing environment of V/III mol ratio, carry out the growth of quantum well structure, recombination luminescence is there is at last trap place, thus solving the ill situation of SQW compound of current green glow GaN, guarantee is provided for improving brightness, luminance raising is obvious。
Description
Technical field
The present invention relates to semicon industry LED epitaxy technique process technique field, be specially the growing method of a kind of GaN quantum well structure。
Background technology
LED is the abbreviation of English LightEmittingDiode (light emitting diode); its basic structure is one block of electroluminescent semi-conducting material; it is placed on a leaded shelf; then surrounding epoxy sealing; play the effect of protection internal core; so the anti-seismic performance of LED is good, it is possible to directly convert the electricity into light。When it is in forward duty (two ends add forward voltage), electric current from LED anode flow to negative electrode time, semiconductor crystal is issued by from ultraviolet to the light of infrared different colours, and the power of light is with current related。
GaN is the compound of stabilizer pole and hard materials with high melting point, also it is the wide bandgap semiconductor materials of direct transition, not only there is good physics and chemical property, and there is electron saturation velocities height, the feature such as thermal conductivity is good, energy gap is big, dielectric constant is little and strong Radiation hardness, can be used to prepare good stability, life-span length, corrosion-resistant and resistant to elevated temperatures high power device, be now widely used for the photoelectric devices such as photoelectron, blue green light LED, high temperature high power device and high-frequency microwave device。
The manufacturing process of current LED epitaxial growth, finally the brightness after encapsulation is relatively low, especially green glow GaN。Electronics and hole are at SQW latter two trap place recombination luminescence, and electronics has problems in energy level transition always, causes that a large amount of electronics cannot transition。Can not with hole-recombination, thus occurring that luminous efficiency is not high, approximate horizontal for 60%-70% at present。
Summary of the invention
Technical problem solved by the invention is in that to provide the growing method of a kind of GaN quantum well structure, to solve the problem in above-mentioned background technology。
Technical problem solved by the invention realizes by the following technical solutions: the growing method of a kind of GaN quantum well structure, its GaN quantum well structure is followed successively by substrate from bottom to top, low temperature nitride gallium cushion, n type gallium nitride layer, stage quantum well layer, P type gallium nitride layer and P type contact layer, described growing method comprises the steps: when high pure nitrogen, purify substrate, then Grown high-temperature ammonolysis gallium cushion after cleaning successively, n type gallium nitride layer, stage quantum well layer, P type gallium nitride layer and P type contact layer, its concrete growing method is:
(1) being cleaned backing material in hydrogen atmosphere processing, temperature is 1100-1180 DEG C, and pressure is 500-800Torr；
(2) high-temperature buffer layer growth: grow a layer and solve the adaptive excessive cushion of lattice, namely after cleaning process terminates, temperature is adjusted to 950-1000 DEG C, when V/III mol ratio is 500-2800, epitaxial growth thickness is that the high temperature of 0.4-1.2um undopes GaN, in this growth course, growth pressure is 200-400Torr；
(3) N-type layer growth: the N-type layer that one layer of doping content of growth is stable, thickness is 1.5-4.0um, and growth temperature is 1040-1180 DEG C, and growth pressure is 350-450Torr, and V/III mol ratio is 550-3200；
(4) shallow SQW SW growth: by the In in 6-8 cyclexGa1-XN (0.04 < x < 0.4)/GaN MQW composition, wherein the thickness of trap is 2-5nm, growth temperature is 700-900 DEG C, growth pressure is 150-600Torr, V/III mol ratio is 350-43000, and shallow SQW SW will not be luminous, is mainly N-GaN electronics and provides electricity, hold and increase the distribution of electric current, also become the cushion of N-GaN and MQW；
(5) stage quantum well layer MQW growth: by the In in 12-15 cycleyGa1-yN (x < y < 1)/GaN MQW composition, the thickness of A layer trap is 4-8nm, and growth temperature is 840-920 DEG C, and growth pressure is 200-500Torr, TMIN flow is 500-600sccm/min, and V/III mol ratio is 1000-4300；Barrier layer thickness is 4-15nm, growth temperature is 720-820 DEG C, growth pressure is 100-500Torr, V/III mol ratio is 600-4300, thickness at B layer trap is 3-6nm, and growth temperature is 780-840 DEG C, and growth pressure is 200-500Torr, TMIN flow is 400-550sccm/min, and V/III mol ratio is 800-3600；Barrier layer thickness is 4-15nm, and growth temperature is 800-920 DEG C, and growth pressure is 100-500Torr, and V/III mol ratio is 600-4300；Thickness at C layer trap is 2-5nm, growth temperature is 800-880 DEG C, growth pressure is 200-500Torr, TMIN flow is 300-400sccm/min V/III mol ratio is 600-3000, barrier layer thickness is 4-15nm, growth temperature is 820-920 DEG C, and growth pressure is 100-500Torr, and V/III mol ratio is 600-4300；Thickness at D layer trap is 2-4nm, growth temperature is 860-920 DEG C, growth pressure is 200-500Torr, TMIN flow is 100-300sccm/min V/III mol ratio is 400-2400, barrier layer thickness is 4-15nm, growth temperature is 820-920 DEG C, and growth pressure is 100-500Torr, and V/III mol ratio is 600-4300；
(6) P-type layer growth: growth temperature is 620-820 DEG C, and growth time is 5-35min, and growth pressure is 100-500Torr, and V/III mol ratio is 300-5000, in the process of growing P-type layer, with N2As carrier gas；
(7) P type contact layer growth: after P-type layer growth terminates, growth thickness is the p-type AlGaN layer of 16-35nm, and growth temperature is 950-1150 DEG C, growth time is 9-12min, growth pressure is 150-500Torr, and V/III mol ratio is the component of 1480-13800, Al is 15%-25%；
(8) after epitaxial growth terminates, the temperature of reative cell being down to 400-700 DEG C, adopt pure nitrogen gas atmosphere to be annealed processing 5-10min, be subsequently reduced to room temperature, epitaxial manufacture process terminates。
With trimethyl gallium in described high-temperature ammonolysis gallium cushion, n type gallium nitride layer, stage quantum well layer, P type gallium nitride layer and P type contact layer, triethyl-gallium, trimethyl aluminium, trimethyl indium and ammonia are respectively as Ga, Al, In and N source。
Using the luxuriant magnesium of silane and two as N, P-type dopant, the SiH in quantum well structure in described high-temperature ammonolysis gallium cushion, n type gallium nitride layer, stage quantum well layer, P type gallium nitride layer and P type contact layer4, and In source。
Compared with disclosed technology, there is advantages below in the present invention: TMIn is adulterated by the present invention at trap place, respectively different pressure, flow, rotating speed, temperature, V/III mol ratio growing environment under, carry out the growth of quantum well structure。Thus growing staged quantum well structure, finally ensure that electronics is under the effect of concentration difference, exciting by forward voltage, smooth transition。At last trap place, recombination luminescence occurring, thus solving the ill situation of SQW compound of current green glow GaN, providing guarantee for improving brightness, luminance raising is obvious。
Detailed description of the invention
It is easy to understand with effect to make the technological means of the present invention, creation characteristic, workflow, using method reach purpose, below in conjunction with the embodiment of the present invention, technical scheme in the embodiment of the present invention is clearly and completely described, obviously, described embodiment is only a part of embodiment of the present invention, rather than whole embodiments。Based on the embodiment in the present invention, the every other embodiment that those of ordinary skill in the art obtain under not making creative work premise, broadly fall into the scope of protection of the invention。
Embodiment 1
A kind of growing method of GaN quantum well structure, its GaN quantum well structure is followed successively by substrate, low temperature nitride gallium cushion, n type gallium nitride layer, stage quantum well layer, P type gallium nitride layer and P type contact layer from bottom to top, and its concrete growing method is:
(1) being cleaned backing material in hydrogen atmosphere processing, temperature is 1100 DEG C, and pressure is 500r/min；
(2) high-temperature buffer layer growth: grow a layer and solve the adaptive excessive cushion of lattice, namely after cleaning process terminates, temperature is adjusted to 950 DEG C, when V/III mol ratio is 500, epitaxial growth thickness is that the high temperature of 0.4um undopes GaN, in this growth course, growth pressure is 200Torr；
(3) N-type layer growth: the N-type layer that one layer of doping content of growth is stable, thickness is 1.5um, and growth temperature is 1040 DEG C, and growth pressure is 350Torr, and V/III mol ratio is 550；
(4) shallow SQW SW growth: by the In in 6 cyclesxGa1-XN (0.04 < x < 0.4)/GaN MQW composition, wherein the thickness of trap is 2nm, growth temperature is 700 DEG C, growth pressure is 150Torr, V/III mol ratio is 350, and shallow SQW SW will not be luminous, is mainly N-GaN electronics and provides electricity, hold and increase the distribution of electric current, also become the cushion of N-GaN and MQW；
(5) stage quantum well layer MQW growth: by the In in 12 cyclesyGa1-yN (x < y < 1)/GaN MQW composition, the thickness of A layer trap is 4nm, and growth temperature is 840 DEG C, and growth pressure is 200Torr, TMIN flow is 500sccm/min, and V/III mol ratio is 1000；Barrier layer thickness is 4nm, and growth temperature is 720 DEG C, and growth pressure is 100Torr, and V/III mol ratio is 600, and the thickness at B layer trap is 3nm, and growth temperature is 780 DEG C, and growth pressure is 200Torr, TMIN flow is 400sccm/min, and V/III mol ratio is 800；Barrier layer thickness is 4nm, and growth temperature is 800 DEG C, and growth pressure is 100Torr, and V/III mol ratio is 600；Thickness at C layer trap is 2nm, and growth temperature is 800 DEG C, and growth pressure is 200Torr, TMIN flow be 300sccm/min V/III mol ratio is 600, and barrier layer thickness is 4nm, and growth temperature is 820 DEG C, and growth pressure is 100Torr, and V/III mol ratio is 600；Thickness at D layer trap is 2nm, and growth temperature is 860 DEG C, and growth pressure is 200Torr, TMIN flow be 100sccm/min V/III mol ratio is 400, and barrier layer thickness is 4nm, and growth temperature is 820 DEG C, and growth pressure is 100Torr, and V/III mol ratio is 600；
(6) P-type layer growth: growth temperature is 620 DEG C, and growth time is 5min, and growth pressure is 100Torr, and V/III mol ratio is 300, in the process of growing P-type layer, with N2As carrier gas；
(7) P type contact layer growth: after P-type layer growth terminates, growth thickness is the p-type AlGaN layer of 16nm, and growth temperature is 950 DEG C, and growth time is 9min, and growth pressure is 150Torr, and V/III mol ratio is the component of 1480, Al is 15%。
(8) after epitaxial growth terminates, the temperature of reative cell being down to 400 DEG C, adopt pure nitrogen gas atmosphere to be annealed processing 5min, be subsequently reduced to room temperature, epitaxial manufacture process terminates。
With trimethyl gallium in the present embodiment, triethyl-gallium, trimethyl aluminium, trimethyl indium and ammonia are respectively as Ga, Al, In and N source；Using the luxuriant magnesium of silane and two as N, P-type dopant, the SiH in quantum well structure4, and In source。
Embodiment 2
A kind of growing method of GaN quantum well structure, its GaN quantum well structure is followed successively by substrate, low temperature nitride gallium cushion, n type gallium nitride layer, stage quantum well layer, P type gallium nitride layer and P type contact layer from bottom to top, described growing method comprises the steps: when high pure nitrogen, purify substrate, then Grown high-temperature ammonolysis gallium cushion after cleaning, n type gallium nitride layer, stage quantum well layer, P type gallium nitride layer and P type contact layer successively, its concrete growing method is:
(1) being cleaned backing material in hydrogen atmosphere processing, temperature is 1180 DEG C, and pressure is 800r/min；
(2) high-temperature buffer layer growth: grow a layer and solve the adaptive excessive cushion of lattice, namely after cleaning process terminates, temperature is adjusted to 1000 DEG C, when V/III mol ratio is 2800, epitaxial growth thickness is that the high temperature of 1.2um undopes GaN, in this growth course, growth pressure is 400Torr；
(3) N-type layer growth: the N-type layer that one layer of doping content of growth is stable, thickness is 4.0um, and growth temperature is 1180 DEG C, and growth pressure is 450Torr, and V/III mol ratio is 3200；
(4) shallow SQW SW growth: by the In in 8 cyclesxGa1-XN (0.04 < x < 0.4)/GaN MQW composition, wherein the thickness of trap is 5nm, growth temperature is 900 DEG C, growth pressure is 600Torr, V/III mol ratio is 43000, and shallow SQW SW will not be luminous, is mainly N-GaN electronics and provides electricity, hold and increase the distribution of electric current, also become the cushion of N-GaN and MQW；
(5) stage quantum well layer MQW growth: by the In in 15 cyclesyGa1-yN (x < y < 1)/GaN MQW composition, the thickness of A layer trap is 8nm, and growth temperature is 840-920 DEG C, and growth pressure is 500Torr, TMIN flow is 600sccm/min, and V/III mol ratio is 4300；Barrier layer thickness is 15nm, and growth temperature is 820 DEG C, and growth pressure is 500Torr, and V/III mol ratio is 4300, and the thickness at B layer trap is 6nm, and growth temperature is 840 DEG C, and growth pressure is 500Torr, TMIN flow is 550sccm/min, and V/III mol ratio is 3600；Barrier layer thickness is 15nm, and growth temperature is 920 DEG C, and growth pressure is 500Torr, and V/III mol ratio is 4300；Thickness at C layer trap is 5nm, and growth temperature is 880 DEG C, and growth pressure is 500Torr, TMIN flow be 400sccm/min V/III mol ratio is 3000, and barrier layer thickness is 15nm, and growth temperature is 920 DEG C, and growth pressure is 500Torr, and V/III mol ratio is 4300；Thickness at D layer trap is 4nm, and growth temperature is 920 DEG C, and growth pressure is 500Torr, TMIN flow be 300sccm/min V/III mol ratio is 2400, and barrier layer thickness is 15nm, and growth temperature is 920 DEG C, and growth pressure is 500Torr, and V/III mol ratio is 4300；
(6) P-type layer growth: growth temperature is 820 DEG C, and growth time is 35min, and growth pressure is 500Torr, and V/III mol ratio is 5000, in the process of growing P-type layer, with N2As carrier gas；
(7) P type contact layer growth: after P-type layer growth terminates, growth thickness is the p-type AlGaN layer of 35nm, and growth temperature is 1150 DEG C, and growth time is 12min, and growth pressure is 500Torr, and V/III mol ratio is the component of 13800, Al is 25%；
(8) after epitaxial growth terminates, the temperature of reative cell being down to 700 DEG C, adopt pure nitrogen gas atmosphere to be annealed processing 10min, be subsequently reduced to room temperature, epitaxial manufacture process terminates。
With trimethyl gallium in the present embodiment, triethyl-gallium, trimethyl aluminium, trimethyl indium and ammonia are respectively as Ga, Al, In and N source；Using the luxuriant magnesium of silane and two as N, P-type dopant, the SiH in quantum well structure4, and In source。
Embodiment 3
A kind of growing method of GaN quantum well structure, its GaN quantum well structure is followed successively by substrate, low temperature nitride gallium cushion, n type gallium nitride layer, stage quantum well layer, P type gallium nitride layer and P type contact layer from bottom to top, described growing method comprises the steps: when high pure nitrogen, purify substrate, then Grown high-temperature ammonolysis gallium cushion after cleaning, n type gallium nitride layer, stage quantum well layer, P type gallium nitride layer and P type contact layer successively, its concrete growing method is:
(1) being cleaned backing material in hydrogen atmosphere processing, temperature is 1150 DEG C, and pressure is 500-800r/min；
(2) high-temperature buffer layer growth: grow a layer and solve the adaptive excessive cushion of lattice, namely after cleaning process terminates, temperature is adjusted to 980 DEG C, when V/III mol ratio is 2000, epitaxial growth thickness is that the high temperature of 0.8um undopes GaN, in this growth course, growth pressure is 300Torr；
(3) N-type layer growth: the N-type layer that one layer of doping content of growth is stable, thickness is 3.0um, and growth temperature is 1060 DEG C, and growth pressure is 400Torr, and V/III mol ratio is 3000；
(4) shallow SQW SW growth: by the In in 6 cyclesxGa1-XN (0.04 < x < 0.4)/GaN MQW composition, wherein the thickness of trap is 4nm, growth temperature is 800 DEG C, growth pressure is 400Torr, V/III mol ratio is 600, and shallow SQW SW will not be luminous, is mainly N-GaN electronics and provides electricity, hold and increase the distribution of electric current, also become the cushion of N-GaN and MQW；
(5) stage quantum well layer MQW growth: by the In in 15 cyclesyGa1-yN (x < y < 1)/GaN MQW composition, the thickness of A layer trap is 6nm, and growth temperature is 900 DEG C, and growth pressure is 400Torr, TMIN flow is 550sccm/min, and V/III mol ratio is 3000；Barrier layer thickness is 5nm, and growth temperature is 800 DEG C, and growth pressure is 300Torr, and V/III mol ratio is 800, and the thickness at B layer trap is 5nm, and growth temperature is 800 DEG C, and growth pressure is 300Torr, TMIN flow is 500sccm/min, and V/III mol ratio is 900；Barrier layer thickness is 9nm, and growth temperature is 900 DEG C, and growth pressure is 400Torr, and V/III mol ratio is 900；Thickness at C layer trap is 3nm, and growth temperature is 850 DEG C, and growth pressure is 300Torr, TMIN flow be 350sccm/min V/III mol ratio is 800, and barrier layer thickness is 8nm, and growth temperature is 850 DEG C, and growth pressure is 200Torr, and V/III mol ratio is 700；Thickness at D layer trap is 3nm, and growth temperature is 900 DEG C, and growth pressure is 400Torr, TMIN flow be 200sccm/min V/III mol ratio is 600, and barrier layer thickness is 7nm, and growth temperature is 900 DEG C, and growth pressure is 300Torr, and V/III mol ratio is 800；
(6) P-type layer growth: growth temperature is 700 DEG C, and growth time is 20min, and growth pressure is 200Torr, and V/III mol ratio is 700, in the process of growing P-type layer, with N2As carrier gas；
(7) P type contact layer growth: after P-type layer growth terminates, growth thickness is the p-type AlGaN layer of 20nm, and growth temperature is 1000 DEG C, and growth time is 10min, and growth pressure is 300Torr, and V/III mol ratio is the component of 13000, Al is 20%。
(8) after epitaxial growth terminates, the temperature of reative cell being down to 500 DEG C, adopt pure nitrogen gas atmosphere to be annealed processing 6min, be subsequently reduced to room temperature, epitaxial manufacture process terminates。
With trimethyl gallium in the present embodiment, triethyl-gallium, trimethyl aluminium, trimethyl indium and ammonia are respectively as Ga, Al, In and N source；Using the luxuriant magnesium of silane and two as N, P-type dopant, the SiH in quantum well structure4, and In source。
TMIn is adulterated by the present invention at trap place, respectively different pressure, flow, rotating speed, temperature, V/III mol ratio growing environment under, carry out the growth of quantum well structure。Thus growing staged quantum well structure, finally ensure that electronics is under the effect of concentration difference, exciting by forward voltage, smooth transition。At last trap place, recombination luminescence occurring, thus solving the ill situation of SQW compound of current green glow GaN, providing guarantee for improving brightness, luminance raising is obvious。
The ultimate principle of the present invention, principal character and advantages of the present invention have more than been shown and described。Skilled person will appreciate that of the industry; the present invention is not restricted to the described embodiments; described in above-described embodiment and description is that principles of the invention is described; without departing from the spirit and scope of the present invention; the present invention also has various changes and modifications, and these changes and improvements both fall within the claimed scope of the invention。The claimed scope of the present invention is defined by appending claims and equivalent thereof。
Claims (3)
1. a growing method for GaN quantum well structure, its GaN quantum well structure is followed successively by substrate, low temperature nitride gallium cushion, n type gallium nitride layer, stage quantum well layer, P type gallium nitride layer and P type contact layer from bottom to top,
It is characterized in that: described growing method comprises the steps: when high pure nitrogen, purify substrate, then Grown high-temperature ammonolysis gallium cushion after cleaning, n type gallium nitride layer, stage quantum well layer, P type gallium nitride layer and P type contact layer successively, its concrete growing method is:
(1) being cleaned backing material in hydrogen atmosphere processing, temperature is 1100-1180 DEG C, and pressure is 500-800Torr；
(2) high-temperature buffer layer growth: grow a layer and solve the adaptive excessive cushion of lattice, namely after cleaning process terminates, temperature is adjusted to 950-1000 DEG C, when V/III mol ratio is 500-2800, epitaxial growth thickness is that the high temperature of 0.4-1.2 μm undopes GaN, in this growth course, growth pressure is 200-400Torr；
(3) N-type layer growth: the N-type layer that one layer of doping content of growth is stable, thickness is 1.5-4.0 μm, and growth temperature is 1040-1180 DEG C, and growth pressure is 350-450Torr, and V/III mol ratio is 550-3200；
(4) shallow SQW SW growth: by the In in 6-8 cyclexGa1-XN/GaN MQW forms, wherein 0.04 < x < 0.4, wherein the thickness of trap is 2-5nm, growth temperature is 700-900 DEG C, growth pressure is 150-600Torr, V/III mol ratio is 350-43000, and shallow SQW SW luminous will not provide electric capacity for N-GaN electronics and increase the distribution of electric current, also becomes the cushion of N-GaN and MQW；
(5) stage quantum well layer MQW growth: by the In in 12-15 cycleyGa1-yN/GaN MQW forms, and wherein the thickness of x < y < 1, A layer trap is 4-8nm, and growth temperature is 840-920 DEG C, and growth pressure is 200-500Torr, TMIn flow is 500-600sccm/min, and V/III mol ratio is 1000-4300；Barrier layer thickness is 4-15nm, growth temperature is 720-820 DEG C, growth pressure is 100-500Torr, V/III mol ratio is 600-4300, thickness at B layer trap is 3-6nm, and growth temperature is 780-840 DEG C, and growth pressure is 200-500Torr, TMIn flow is 400-550sccm/min, and V/III mol ratio is 800-3600；Barrier layer thickness is 4-15nm, and growth temperature is 800-920 DEG C, and growth pressure is 100-500Torr, and V/III mol ratio is 600-4300；Thickness at C layer trap is 2-5nm, growth temperature is 800-880 DEG C, growth pressure is 200-500Torr, TMIn flow is 300-400sccm/min, V/III mol ratio is 600-3000, and barrier layer thickness is 4-15nm, and growth temperature is 820-920 DEG C, growth pressure is 100-500Torr, and V/III mol ratio is 600-4300；Thickness at D layer trap is 2-4nm, growth temperature is 860-920 DEG C, growth pressure is 200-500Torr, TMIn flow is 100-300sccm/min, V/III mol ratio is 400-2400, and barrier layer thickness is 4-15nm, and growth temperature is 820-920 DEG C, growth pressure is 100-500Torr, and V/III mol ratio is 600-4300；
(6) P-type layer growth: growth temperature is 620-820 DEG C, and growth time is 5-35min, and growth pressure is 100-500Torr, and V/III mol ratio is 300-5000, in the process of growing P-type layer, with N2As carrier gas；
(7) P type contact layer growth: after P-type layer growth terminates, growth thickness is the p-type AlGaN layer of 16-35nm, and growth temperature is 950-1150 DEG C, growth time is 9-12min, growth pressure is 150-500Torr, and V/III mol ratio is the component of 1480-13800, Al is 15%-25%；
(8) after epitaxial growth terminates, the temperature of reative cell being down to 400-700 DEG C, adopt pure nitrogen gas atmosphere to be annealed processing 5-10min, be subsequently reduced to room temperature, epitaxial manufacture process terminates。
2. the growing method of a kind of GaN quantum well structure according to claim 1, it is characterized in that: with trimethyl gallium in described high-temperature ammonolysis gallium cushion, n type gallium nitride layer, stage quantum well layer, P type gallium nitride layer and P type contact layer, triethyl-gallium, trimethyl aluminium, trimethyl indium and ammonia are respectively as Ga, Al, In and N source。
3. the growing method of a kind of GaN quantum well structure according to claim 1, it is characterized in that: using the luxuriant magnesium of silane and two as N, P-type dopant, the SiH in quantum well structure in described high-temperature ammonolysis gallium cushion, n type gallium nitride layer, stage quantum well layer, P type gallium nitride layer and P type contact layer4, and In source。
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