CN103811600A - Growth method for GaN (green ray) quantum well structure - Google Patents
Growth method for GaN (green ray) quantum well structure Download PDFInfo
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- CN103811600A CN103811600A CN201410090733.9A CN201410090733A CN103811600A CN 103811600 A CN103811600 A CN 103811600A CN 201410090733 A CN201410090733 A CN 201410090733A CN 103811600 A CN103811600 A CN 103811600A
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- 238000000034 method Methods 0.000 title claims abstract description 42
- 229910002601 GaN Inorganic materials 0.000 claims abstract description 77
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims abstract description 29
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 15
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 239000011248 coating agent Substances 0.000 claims description 23
- 238000000576 coating method Methods 0.000 claims description 23
- 229910052733 gallium Inorganic materials 0.000 claims description 21
- 230000004888 barrier function Effects 0.000 claims description 20
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 16
- 230000008569 process Effects 0.000 claims description 16
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 10
- IWBUYGUPYWKAMK-UHFFFAOYSA-N [AlH3].[N] Chemical compound [AlH3].[N] IWBUYGUPYWKAMK-UHFFFAOYSA-N 0.000 claims description 8
- 238000005915 ammonolysis reaction Methods 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 7
- 230000005611 electricity Effects 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 229910002704 AlGaN Inorganic materials 0.000 claims description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 5
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 5
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 5
- 230000003044 adaptive effect Effects 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- 229910021529 ammonia Inorganic materials 0.000 claims description 5
- 238000000137 annealing Methods 0.000 claims description 5
- 239000012159 carrier gas Substances 0.000 claims description 5
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 5
- 239000002019 doping agent Substances 0.000 claims description 5
- 239000001257 hydrogen Substances 0.000 claims description 5
- 229910052739 hydrogen Inorganic materials 0.000 claims description 5
- 229910052738 indium Inorganic materials 0.000 claims description 5
- 229910052749 magnesium Inorganic materials 0.000 claims description 5
- 239000011777 magnesium Substances 0.000 claims description 5
- 229910000077 silane Inorganic materials 0.000 claims description 5
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 claims description 5
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 claims description 5
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 claims description 5
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 claims description 5
- 238000000746 purification Methods 0.000 claims description 4
- 238000005215 recombination Methods 0.000 abstract description 5
- 238000004020 luminiscence type Methods 0.000 abstract description 4
- 230000006798 recombination Effects 0.000 abstract description 4
- 230000007704 transition Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
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- Engineering & Computer Science (AREA)
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
The invention discloses a growth method for a GaN (green ray) quantum well structure. The GaN quantum well structure comprises a substrate, a low-temperature gallium nitride buffer layer, an N-type gallium nitride layer, a stage-type quantum well layer, a P type gallium nitride layer and a P type contact layer which are arranged in sequence from the bottom to top. The growth method includes a step of purifying the substrate under high-purity nitrogen and a step of growing a high-temperature gallium nitride buffer layer, the N-type gallium nitride layer, the stage-type quantum well layer, the P type gallium nitride layer and the P type contact layer on the purified substrate in sequence. According to the growth method for the GaN (green ray) quantum well structure, TMIn is doped at the well, the quantum well structure is grown under different pressures, different flow rates, different rotating speeds, different temperatures and different V/III mol ratios, and recombination luminescence is happened on the last well, and accordingly the problem that the current GaN (green ray) quantum well is unfavorable to recombine is solved, the luminance improvement is guaranteed, and the luminance is improved obviously.
Description
Technical field
The present invention relates to semicon industry LED epitaxy technique process technique field, be specially a kind of GaN(green glow) growing method of quantum well structure.
Background technology
LED is English Light Emitting Diode(light-emitting diode) abbreviation; its basic structure is an electroluminescent semi-conducting material; be placed on a leaded shelf; then surrounding epoxy sealing; play the effect of protection internal core; so the anti-seismic performance of LED is good, can directly electricity be converted to light.When it is during in forward operating state (two ends add forward voltage), when electric current flows to negative electrode from LED anode, semiconductor crystal just sends the light from ultraviolet to infrared different colours, the power of light and current related.
GaN is the compound of stabilizer pole and hard materials with high melting point, also be the wide bandgap semiconductor materials of direct transition, not only there is good physics and chemistry character, and there is the features such as the Radiation hardness that electron saturation velocities is high, thermal conductivity good, energy gap is large, dielectric constant is little and strong, can be used to prepare good stability, long, corrosion-resistant and resistant to elevated temperatures high power device of life-span, be widely used at present the photoelectric devices such as photoelectron, blue green light LED, high temperature high power device and high-frequency microwave device.
The manufacturing process of LED epitaxial growth at present, the finally brightness after encapsulation is lower, especially green glow GaN.Electronics and hole are at quantum well latter two trap place recombination luminescence, and electronics has problems in energy level transition always, cause a large amount of electronics cannot transition.Can not with hole-recombination, thereby occur that luminous efficiency is not high, at present approximate horizontal is 60%-70%.
Summary of the invention
Technical problem solved by the invention is to provide a kind of GaN(green glow) growing method of quantum well structure, to solve the problem in above-mentioned background technology.
Technical problem solved by the invention realizes by the following technical solutions: a kind of GaN(green glow) growing method of quantum well structure, its GaN quantum well structure is followed successively by substrate from bottom to top, low temperature gallium nitride resilient coating, n type gallium nitride layer, stage quantum well layer, P type gallium nitride layer and P type contact layer, described growing method comprises the steps: under the condition of high pure nitrogen, purify substrate, then the Grown high-temperature ammonolysis gallium resilient coating after purification successively, n type gallium nitride layer, stage quantum well layer, P type gallium aluminium nitrogen layer and P type contact layer, its concrete growing method is:
(1) backing material is carried out in hydrogen atmosphere to clean, temperature is 1100-1180 ℃, and pressure is 500-800r/min;
(2) high-temperature buffer layer growth: growth one deck solves the adaptive excessive resilient coating of lattice, be after clean finishes, temperature is adjusted to 950-1000 ℃, the high temperature that under the condition that is 500-2800 in V/III mol ratio, epitaxial growth thickness the is 0.4-1.2um GaN that undopes, in this growth course, growth pressure is 200-400Torr;
(3) N-type layer growth: the stable N-type layer of growth one deck doping content, thickness is 1.5-4.0um, and growth temperature is 1040-1180 ℃, and growth pressure is 350-450Torr, and V/III mol ratio is 550-3200;
(4) shallow quantum well SW growth: InxGa1-XN (the 0.04<x<0.4)/GaN Multiple Quantum Well by 6-8 cycle forms, wherein the thickness of trap is 2-5nm, growth temperature is 700-900 ℃, growth pressure is 150-600Torr, V/III mol ratio is 350-43000, and shallow quantum well SW can be not luminous, is mainly N-GaN electronics electricity is provided, hold and increase the distribution of electric current, also becoming the resilient coating of N-GaN and MQW;
(5) stage quantum well layer MQW growth: InyGa1-yN (the x<y<1)/GaN Multiple Quantum Well by 12-15 cycle forms, the thickness of A layer trap is 4-8nm, growth temperature is 840-920 ℃, growth pressure is 200-500Torr, TMIN flow is 500-600sccm/min, and V/III mol ratio is 1000-4300; Barrier layer thickness is 4-15nm, growth temperature is 720-820 ℃, growth pressure is 100-500Torr, V/III mol ratio is 600-4300, be 3-6nm at the thickness of B layer trap, growth temperature is 780-840 ℃, and growth pressure is 200-500Torr, TMIN flow is 400-550sccm/min, and V/III mol ratio is 800-3600; Barrier layer thickness is 4-15nm, and growth temperature is 800-920 ℃, and growth pressure is 100-500Torr, and V/III mol ratio is 600-4300; Be 2-5nm at the thickness of C layer trap, growth temperature is 800-880 ℃, growth pressure is 200-500Torr, TMIN flow is that 300-400sccm/min V/III mol ratio is 600-3000, barrier layer thickness is 4-15nm, growth temperature is 820-920 ℃, and growth pressure is 100-500Torr, and V/III mol ratio is 600-4300; Be 2-4nm at the thickness of D layer trap, growth temperature is 860-920 ℃, growth pressure is 200-500Torr, TMIN flow is that 100-300sccm/min V/III mol ratio is 400-2400, barrier layer thickness is 4-15nm, growth temperature is 820-920 ℃, and growth pressure is 100-500Torr, and V/III mol ratio is 600-4300;
(6) P type layer growth: growth temperature is 620-820 ℃, growth time is 5-35min, and growth pressure is 100-500Torr, and V/III mol ratio is 300-5000, in the process of growing P-type layer, with N
2as carrier gas;
(7) P type contact layer growth: after P type layer growth finishes, the p-type AlGaN layer that growth thickness is 16-35nm, growth temperature is 950-1150 ℃, growth time is 9-12min, growth pressure is 150-500Torr, and V/III mol ratio is 1480-13800, and the component of Al is 15%-25%;
(8) after epitaxial growth finishes, the temperature of reative cell is down to 400-700 ℃, adopts pure nitrogen gas atmosphere to carry out annealing in process 5-10min, be down to subsequently room temperature, epitaxial manufacture process finishes.
In described high-temperature ammonolysis gallium resilient coating, n type gallium nitride layer, stage quantum well layer, P type gallium aluminium nitrogen layer and P type contact layer, with trimethyl gallium, triethyl-gallium, trimethyl aluminium, trimethyl indium and ammonia are respectively as Ga, Al, In and N source.
In described high-temperature ammonolysis gallium resilient coating, n type gallium nitride layer, stage quantum well layer, P type gallium aluminium nitrogen layer and P type contact layer using silane and two luxuriant magnesium respectively as N, P type dopant, the SiH in quantum well structure
4, and In source.
Compared with public technology, there is following advantage in the present invention: the present invention adulterates to TMIn at trap place, under the growing environment of different pressure, flow, rotating speed, temperature, V/III mol ratio, carries out the growth of quantum well structure respectively.Thereby grow staged quantum well structure, finally guaranteed that electronics is under the effect of concentration difference, by exciting of forward voltage, transition smoothly.At last trap place, recombination luminescence occurs, thereby solve the compound ill situation of quantum well of current green glow GaN, provide guarantee for improving brightness, luminance raising is obvious.
Embodiment
In order to make technological means of the present invention, creation characteristic, workflow, using method reach object and effect is easy to understand, below in conjunction with the embodiment of the present invention, technical scheme in the embodiment of the present invention is clearly and completely described, obviously, described embodiment is only the present invention's part embodiment, rather than whole embodiment.Based on the embodiment in the present invention, those of ordinary skills, not making the every other embodiment obtaining under creative work prerequisite, belong to the scope of protection of the invention.
Embodiment 1
A kind of GaN(green glow) growing method of quantum well structure, its GaN quantum well structure is followed successively by substrate, low temperature gallium nitride resilient coating, n type gallium nitride layer, stage quantum well layer, P type gallium nitride layer and P type contact layer from bottom to top, and its concrete growing method is:
(1) backing material is carried out in hydrogen atmosphere to clean, temperature is 1100 ℃, and pressure is 500r/min;
(2) high-temperature buffer layer growth: growth one deck solves the adaptive excessive resilient coating of lattice, be after clean finishes, temperature is adjusted to 950 ℃, the high temperature that under the condition that is 500 in V/III mol ratio, epitaxial growth thickness the is 0.4um GaN that undopes, in this growth course, growth pressure is 200Torr;
(3) N-type layer growth: the stable N-type layer of growth one deck doping content, thickness is 1.5um, and growth temperature is 1040 ℃, and growth pressure is 350Torr, and V/III mol ratio is 550;
(4) shallow quantum well SW growth: InxGa1-XN (the 0.04<x<0.4)/GaN Multiple Quantum Well by 6 cycles forms, wherein the thickness of trap is 2nm, growth temperature is 700 ℃, growth pressure is 150Torr, V/III mol ratio is 350, and shallow quantum well SW can be not luminous, is mainly N-GaN electronics electricity is provided, hold and increase the distribution of electric current, also becoming the resilient coating of N-GaN and MQW;
(5) stage quantum well layer MQW growth: InyGa1-yN (the x<y<1)/GaN Multiple Quantum Well by 12 cycles forms, the thickness of A layer trap is 4nm, growth temperature is 840 ℃, growth pressure is 200Torr, TMIN flow is 500sccm/min, and V/III mol ratio is 1000; Barrier layer thickness is 4nm, and growth temperature is 720 ℃, and growth pressure is 100Torr, and V/III mol ratio is 600, is 3nm at the thickness of B layer trap, and growth temperature is 780 ℃, and growth pressure is 200Torr, and TMIN flow is 400sccm/min, and V/III mol ratio is 800; Barrier layer thickness is 4nm, and growth temperature is 800 ℃, and growth pressure is 100Torr, and V/III mol ratio is 600; Be 2nm at the thickness of C layer trap, growth temperature is 800 ℃, and growth pressure is 200Torr, and TMIN flow is that 300sccm/min V/III mol ratio is 600, and barrier layer thickness is 4nm, and growth temperature is 820 ℃, and growth pressure is 100Torr, and V/III mol ratio is 600; Be 2nm at the thickness of D layer trap, growth temperature is 860 ℃, and growth pressure is 200Torr, and TMIN flow is that 100sccm/min V/III mol ratio is 400, and barrier layer thickness is 4nm, and growth temperature is 820 ℃, and growth pressure is 100Torr, and V/III mol ratio is 600;
(6) P type layer growth: growth temperature is 620 ℃, growth time is 5min, and growth pressure is 100Torr, and V/III mol ratio is 300, in the process of growing P-type layer, with N
2as carrier gas;
(7) P type contact layer growth: after P type layer growth finishes, the p-type AlGaN layer that growth thickness is 16nm, growth temperature is 950 ℃, and growth time is 9min, and growth pressure is 150Torr, and the component that V/III mol ratio is 1480, Al is 15%.
(8) after epitaxial growth finishes, the temperature of reative cell is down to 400 ℃, adopts pure nitrogen gas atmosphere to carry out annealing in process 5min, be down to subsequently room temperature, epitaxial manufacture process finishes.
In the present embodiment, with trimethyl gallium, triethyl-gallium, trimethyl aluminium, trimethyl indium and ammonia are respectively as Ga, Al, In and N source; Using silane and two luxuriant magnesium respectively as N, P type dopant, the SiH in quantum well structure
4, and In source.
Embodiment 2
A kind of GaN(green glow) growing method of quantum well structure, its GaN quantum well structure is followed successively by substrate, low temperature gallium nitride resilient coating, n type gallium nitride layer, stage quantum well layer, P type gallium nitride layer and P type contact layer from bottom to top, described growing method comprises the steps: under the condition of high pure nitrogen, purify substrate, then Grown high-temperature ammonolysis gallium resilient coating, n type gallium nitride layer, stage quantum well layer, P type gallium aluminium nitrogen layer and the P type contact layer after purification successively, its concrete growing method is:
(1) backing material is carried out in hydrogen atmosphere to clean, temperature is 1180 ℃, and pressure is 800r/min;
(2) high-temperature buffer layer growth: growth one deck solves the adaptive excessive resilient coating of lattice, be after clean finishes, temperature is adjusted to 1000 ℃, the high temperature that under the condition that is 2800 in V/III mol ratio, epitaxial growth thickness the is 1.2um GaN that undopes, in this growth course, growth pressure is 400Torr;
(3) N-type layer growth: the stable N-type layer of growth one deck doping content, thickness is 4.0um, and growth temperature is 1180 ℃, and growth pressure is 450Torr, and V/III mol ratio is 3200;
(4) shallow quantum well SW growth: InxGa1-XN (the 0.04<x<0.4)/GaN Multiple Quantum Well by 8 cycles forms, wherein the thickness of trap is 5nm, growth temperature is 900 ℃, growth pressure is 600Torr, V/III mol ratio is 43000, and shallow quantum well SW can be not luminous, is mainly N-GaN electronics electricity is provided, hold and increase the distribution of electric current, also becoming the resilient coating of N-GaN and MQW;
(5) stage quantum well layer MQW growth: InyGa1-yN (the x<y<1)/GaN Multiple Quantum Well by 15 cycles forms, the thickness of A layer trap is 8nm, growth temperature is 840-920 ℃, growth pressure is 500Torr, TMIN flow is 600sccm/min, and V/III mol ratio is 4300; Barrier layer thickness is 15nm, and growth temperature is 820 ℃, and growth pressure is 500Torr, V/III mol ratio is 4300, is 6nm at the thickness of B layer trap, and growth temperature is 840 ℃, growth pressure is 500Torr, and TMIN flow is 550sccm/min, and V/III mol ratio is 3600; Barrier layer thickness is 15nm, and growth temperature is 920 ℃, and growth pressure is 500Torr, and V/III mol ratio is 4300; Be 5nm at the thickness of C layer trap, growth temperature is 880 ℃, and growth pressure is 500Torr, TMIN flow is that 400sccm/min V/III mol ratio is 3000, and barrier layer thickness is 15nm, and growth temperature is 920 ℃, growth pressure is 500Torr, and V/III mol ratio is 4300; Be 4nm at the thickness of D layer trap, growth temperature is 920 ℃, and growth pressure is 500Torr, TMIN flow is that 300sccm/min V/III mol ratio is 2400, and barrier layer thickness is 15nm, and growth temperature is 920 ℃, growth pressure is 500Torr, and V/III mol ratio is 4300;
(6) P type layer growth: growth temperature is 820 ℃, growth time is 35min, and growth pressure is 500Torr, and V/III mol ratio is 5000, in the process of growing P-type layer, with N
2as carrier gas;
(7) P type contact layer growth: after P type layer growth finishes, the p-type AlGaN layer that growth thickness is 35nm, growth temperature is 1150 ℃, and growth time is 12min, and growth pressure is 500Torr, and the component that V/III mol ratio is 13800, Al is 25%;
(8) after epitaxial growth finishes, the temperature of reative cell is down to 700 ℃, adopts pure nitrogen gas atmosphere to carry out annealing in process 10min, be down to subsequently room temperature, epitaxial manufacture process finishes.
In the present embodiment, with trimethyl gallium, triethyl-gallium, trimethyl aluminium, trimethyl indium and ammonia are respectively as Ga, Al, In and N source; Using silane and two luxuriant magnesium respectively as N, P type dopant, the SiH in quantum well structure
4, and In source.
Embodiment 3
A kind of GaN(green glow) growing method of quantum well structure, its GaN quantum well structure is followed successively by substrate, low temperature gallium nitride resilient coating, n type gallium nitride layer, stage quantum well layer, P type gallium nitride layer and P type contact layer from bottom to top, described growing method comprises the steps: under the condition of high pure nitrogen, purify substrate, then Grown high-temperature ammonolysis gallium resilient coating, n type gallium nitride layer, stage quantum well layer, P type gallium aluminium nitrogen layer and the P type contact layer after purification successively, its concrete growing method is:
(1) backing material is carried out in hydrogen atmosphere to clean, temperature is 1150 ℃, and pressure is 500-800r/min;
(2) high-temperature buffer layer growth: growth one deck solves the adaptive excessive resilient coating of lattice, be after clean finishes, temperature is adjusted to 980 ℃, the high temperature that under the condition that is 2000 in V/III mol ratio, epitaxial growth thickness the is 0.8um GaN that undopes, in this growth course, growth pressure is 300Torr;
(3) N-type layer growth: the stable N-type layer of growth one deck doping content, thickness is 3.0um, and growth temperature is 1060 ℃, and growth pressure is 400Torr, and V/III mol ratio is 3000;
(4) shallow quantum well SW growth: InxGa1-XN (the 0.04<x<0.4)/GaN Multiple Quantum Well by 6 cycles forms, wherein the thickness of trap is 4nm, growth temperature is 800 ℃, growth pressure is 400Torr, V/III mol ratio is 600, and shallow quantum well SW can be not luminous, is mainly N-GaN electronics electricity is provided, hold and increase the distribution of electric current, also becoming the resilient coating of N-GaN and MQW;
(5) stage quantum well layer MQW growth: InyGa1-yN (the x<y<1)/GaN Multiple Quantum Well by 15 cycles forms, the thickness of A layer trap is 6nm, growth temperature is 900 ℃, growth pressure is 400Torr, TMIN flow is 550sccm/min, and V/III mol ratio is 3000; Barrier layer thickness is 5nm, and growth temperature is 800 ℃, and growth pressure is 300Torr, and V/III mol ratio is 800, is 5nm at the thickness of B layer trap, and growth temperature is 800 ℃, and growth pressure is 300Torr, and TMIN flow is 500sccm/min, and V/III mol ratio is 900; Barrier layer thickness is 9nm, and growth temperature is 900 ℃, and growth pressure is 400Torr, and V/III mol ratio is 900; Be 3nm at the thickness of C layer trap, growth temperature is 850 ℃, and growth pressure is 300Torr, and TMIN flow is that 350sccm/min V/III mol ratio is 800, and barrier layer thickness is 8nm, and growth temperature is 850 ℃, and growth pressure is 200Torr, and V/III mol ratio is 700; Be 3nm at the thickness of D layer trap, growth temperature is 900 ℃, and growth pressure is 400Torr, and TMIN flow is that 200sccm/min V/III mol ratio is 600, and barrier layer thickness is 7nm, and growth temperature is 900 ℃, and growth pressure is 300Torr, and V/III mol ratio is 800;
(6) P type layer growth: growth temperature is 700 ℃, growth time is 20min, and growth pressure is 200Torr, and V/III mol ratio is 700, in the process of growing P-type layer, with N
2as carrier gas;
(7) P type contact layer growth: after P type layer growth finishes, the p-type AlGaN layer that growth thickness is 20nm, growth temperature is 1000 ℃, and growth time is 10min, and growth pressure is 300Torr, and the component that V/III mol ratio is 13000, Al is 20%.
(8) after epitaxial growth finishes, the temperature of reative cell is down to 500 ℃, adopts pure nitrogen gas atmosphere to carry out annealing in process 6min, be down to subsequently room temperature, epitaxial manufacture process finishes.
In the present embodiment, with trimethyl gallium, triethyl-gallium, trimethyl aluminium, trimethyl indium and ammonia are respectively as Ga, Al, In and N source; Using silane and two luxuriant magnesium respectively as N, P type dopant, the SiH in quantum well structure
4, and In source.
The present invention adulterates to TMIn at trap place, under the growing environment of different pressure, flow, rotating speed, temperature, V/III mol ratio, carries out the growth of quantum well structure respectively.Thereby grow staged quantum well structure, finally guaranteed that electronics is under the effect of concentration difference, by exciting of forward voltage, transition smoothly.At last trap place, recombination luminescence occurs, thereby solve the compound ill situation of quantum well of current green glow GaN, provide guarantee for improving brightness, luminance raising is obvious.
More than show and described basic principle of the present invention, principal character and advantage of the present invention.The technical staff of the industry should understand; the present invention is not restricted to the described embodiments; that in above-described embodiment and specification, describes just illustrates principle of the present invention; without departing from the spirit and scope of the present invention; the present invention also has various changes and modifications, and these changes and improvements all fall in the claimed scope of the invention.Claimed scope of the present invention is defined by appending claims and equivalent thereof.
Claims (3)
1. GaN(green glow) growing method of quantum well structure, its GaN quantum well structure is followed successively by substrate, low temperature gallium nitride resilient coating, n type gallium nitride layer, stage quantum well layer, P type gallium nitride layer and P type contact layer from bottom to top,
It is characterized in that: described growing method comprises the steps: under the condition of high pure nitrogen, purify substrate, then Grown high-temperature ammonolysis gallium resilient coating, n type gallium nitride layer, stage quantum well layer, P type gallium aluminium nitrogen layer and the P type contact layer after purification successively, its concrete growing method is:
(1) backing material is carried out in hydrogen atmosphere to clean, temperature is 1100-1180 ℃, and pressure is 500-800r/min;
(2) high-temperature buffer layer growth: growth one deck solves the adaptive excessive resilient coating of lattice, be after clean finishes, temperature is adjusted to 950-1000 ℃, the high temperature that under the condition that is 500-2800 in V/III mol ratio, epitaxial growth thickness the is 0.4-1.2um GaN that undopes, in this growth course, growth pressure is 200-400Torr;
(3) N-type layer growth: the stable N-type layer of growth one deck doping content, thickness is 1.5-4.0um, and growth temperature is 1040-1180 ℃, and growth pressure is 350-450Torr, and V/III mol ratio is 550-3200;
(4) shallow quantum well SW growth: InxGa1-XN (the 0.04<x<0.4)/GaN Multiple Quantum Well by 6-8 cycle forms, wherein the thickness of trap is 2-5nm, growth temperature is 700-900 ℃, growth pressure is 150-600Torr, V/III mol ratio is 350-43000, and shallow quantum well SW can be not luminous, is mainly N-GaN electronics electricity is provided, hold and increase the distribution of electric current, also becoming the resilient coating of N-GaN and MQW;
(5) stage quantum well layer MQW growth: InyGa1-yN (the x<y<1)/GaN Multiple Quantum Well by 12-15 cycle forms, the thickness of A layer trap is 4-8nm, growth temperature is 840-920 ℃, growth pressure is 200-500Torr, TMIN flow is 500-600sccm/min, and V/III mol ratio is 1000-4300; Barrier layer thickness is 4-15nm, growth temperature is 720-820 ℃, growth pressure is 100-500Torr, V/III mol ratio is 600-4300, be 3-6nm at the thickness of B layer trap, growth temperature is 780-840 ℃, and growth pressure is 200-500Torr, TMIN flow is 400-550sccm/min, and V/III mol ratio is 800-3600; Barrier layer thickness is 4-15nm, and growth temperature is 800-920 ℃, and growth pressure is 100-500Torr, and V/III mol ratio is 600-4300; Be 2-5nm at the thickness of C layer trap, growth temperature is 800-880 ℃, growth pressure is 200-500Torr, TMIN flow is that 300-400sccm/min V/III mol ratio is 600-3000, barrier layer thickness is 4-15nm, growth temperature is 820-920 ℃, and growth pressure is 100-500Torr, and V/III mol ratio is 600-4300; Be 2-4nm at the thickness of D layer trap, growth temperature is 860-920 ℃, growth pressure is 200-500Torr, TMIN flow is that 100-300sccm/min V/III mol ratio is 400-2400, barrier layer thickness is 4-15nm, growth temperature is 820-920 ℃, and growth pressure is 100-500Torr, and V/III mol ratio is 600-4300;
(6) P type layer growth: growth temperature is 620-820 ℃, growth time is 5-35min, and growth pressure is 100-500Torr, and V/III mol ratio is 300-5000, in the process of growing P-type layer, with N
2as carrier gas;
(7) P type contact layer growth: after P type layer growth finishes, the p-type AlGaN layer that growth thickness is 16-35nm, growth temperature is 950-1150 ℃, growth time is 9-12min, growth pressure is 150-500Torr, and V/III mol ratio is 1480-13800, and the component of Al is 15%-25%;
(8) after epitaxial growth finishes, the temperature of reative cell is down to 400-700 ℃, adopts pure nitrogen gas atmosphere to carry out annealing in process 5-10min, be down to subsequently room temperature, epitaxial manufacture process finishes.
2. a kind of GaN(green glow according to claim 1) growing method of quantum well structure, it is characterized in that: in described high-temperature ammonolysis gallium resilient coating, n type gallium nitride layer, stage quantum well layer, P type gallium aluminium nitrogen layer and P type contact layer, with trimethyl gallium, triethyl-gallium, trimethyl aluminium, trimethyl indium and ammonia are respectively as Ga, Al, In and N source.
3. a kind of GaN(green glow according to claim 1) growing method of quantum well structure, it is characterized in that: in described high-temperature ammonolysis gallium resilient coating, n type gallium nitride layer, stage quantum well layer, P type gallium aluminium nitrogen layer and P type contact layer using silane and two luxuriant magnesium respectively as N, P type dopant, the SiH in quantum well structure
4, and In source.
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