CN103413877A - Method for growing quantum well stress release layer of epitaxial structure and epitaxial structure - Google Patents
Method for growing quantum well stress release layer of epitaxial structure and epitaxial structure Download PDFInfo
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Abstract
The invention provides a method for growing a quantum well stress release layer of an epitaxial structure and the epitaxial structure. The epitaxial structure comprises the quantum well stress release layer with the total thickness of 160nm. The quantum well stress release layer is an HT MQW layer doped with In and Al and comprises a GaN layer with the thickness of 40nm and an AlyInxGa(1-x-y)N layer with the thickness of 2nm, wherein x ranges from 0.05 to 0.08, and y ranges from 0.02 to 0.05. According to the growing method, by modifying the energy band diagram of the HT MQW, electrons entering a luminous zone can be blocked, and the probability that the electrons enter a p layer and are recombined with holes in a nonradiative mode is reduced; moreover, the electrons blocked in the HT MQW are injected into the luminous zone more evenly through two-dimensional diffusion, the efficiency of the recombination between the electrons and the holes is promoted, and the luminance is improved.
Description
Technical field
The present invention relates to LED extension design field, especially, relate to a kind of growing method and epitaxial structure thereof of epitaxial structure quantum well stress release layer.
Background technology
Using GaN as basic light-emitting diode (LED) as a kind of efficient, environmental protection, green New Solid lighting source, have that low-voltage, low-power consumption, volume are little, lightweight, the life-span long, high reliability lamp advantage, be widely used in rapidly traffic lights, mobile phone backlight source, outdoor full color display screen, landscape light in city, the inside and outside lamp of automobile, Tunnel Lamp etc.
Therefore, the various aspects of performance of LED promotes and all by industry, is paid close attention to.
Summary of the invention
The object of the invention is to provide a kind of growing method and epitaxial structure thereof of epitaxial structure quantum well stress release layer, to solve the technical problem of further raising LED brightness.
For achieving the above object, the invention provides a kind of growing method of epitaxial structure quantum well stress release layer, comprise successively and process substrate, low temperature growth buffer GaN layer, growth undope GaN layer, growth that GaN layer, growth mix Si have chance with a layer MQW, growing P-type AlGaN layer, growth P-type GaN layer, growing InGaN layer step;
In growth, mix SiGaN layer step and growth is had chance with between layer MQW step, comprise grown quantum trap stress release layer steps A:
In temperature, be 750-800 ℃, in the reative cell of 300mbar, pass into trimethyl indium, trimethyl gallium, triethyl-gallium and trimethyl aluminium, generate the GaN layer of 40nm thickness and the Al of 2nm thickness
yIn
xGa
(1-x-y)The N layer, x=0.05-0.08 wherein, y=0.02-0.05, gross thickness is 160nm.
Preferably, before described steps A, comprise step:
S1, process substrate: 1000-1100 ℃ hydrogen atmosphere under, process Sapphire Substrate 5-6 minute;
S2, low temperature growth buffer GaN layer: being cooled to 500-550 ℃, is the low temperature buffer GaN layer of 30-40nm at Grown on Sapphire Substrates thickness;
S3, the GaN layer that undopes of growing: be warming up to 1000-1100 ℃, lasting growth thickness is the GaN layer that undopes of 1-2.5um;
The GaN layer of Si is mixed in S4, growth: lasting growth thickness is the GaN layer that the N-type of 2-4um is mixed 16～32sccm Si, and the doping content of Si is 5E18-2E19atom/cm
3.
Preferably, after described steps A, comprise step:
D1, the growth layer MQW that have chance with periodically: the thickness of 750 ℃ of grow doping 250～500sccm In of low temperature is the In of 3nm
xGa
(1-x)The N layer, x=0.20-0.21 wherein, the GaN layer that 840 ℃ of growth thickness of high temperature are 12nm, In
xGa
(1-x)The periodicity of N/GaN layer is 15; The doping content of In is 1E19-1E20atom/cm
3.
D2, growing P-type AlGaN layer: increase the temperature to the P type AlGaN layer that 930-950 ℃ of lasting growth thickness is 20-30nm;
D3, growth P-type GaN layer: increasing the temperature to 950-980 ℃ of lasting growth thickness is the P type GaN layer of mixing 600～800sccmMg of 0.15-0.20um; The doping content of Mg is 1E19～1E20atom/cm
3
D4, growing InGaN layer: while reducing the temperature to 650-680 ℃, growth thickness is the InGaN layer of mixing 1200～1800sccmMg of 5-10nm; The doping content of Mg is 1E20～1E21atom/cm
3
D5, reduce the temperature to 700-750 ℃, activation P type GaN layer under nitrogen atmosphere, duration 20-30 minute.
The invention also discloses a kind of epitaxial structure, comprise that gross thickness is the quantum well stress release layer of 160nm, described quantum well stress release layer is the HT mqw layer of mixing In and Al, comprises the GaN layer of 40nm thickness and the Al of 2nm thickness
yIn
xGa
(1-x-y)The N layer, x=0.05-0.08 wherein, y=0.02-0.05.
Preferably, under described quantum well stress release layer, comprise successively from top to bottom:
GaN nucleating layer, thickness are 30-40nm;
Non-doping uGaN resilient coating, thickness is 1-2.5um;
NGaN layer, thickness are 2-4um, and the doping content of Si is 5E18-2E19atom/cm
3.
Preferably, on described quantum well stress release layer, comprise successively from top to bottom:
Mix indium trap layer, comprise In Ga
(1-x)N layer and GaN layer, wherein, In
xGa
(1-x)The thickness of N layer is 3nm, doping In, and the doping content of In is 1E19-1E20atom/cm
3The thickness of GaN layer is 12nm; Described In
xGa
(1-x)The periodicity of N layer and described GaN ply is 15;
P type AlGaN layer, thickness is 20-30nm;
P type GaN layer, thickness is 0.15-0.20um, the doping content of Mg is 1E19～1E20atom/cm
3
InGaN layer, thickness are 5-10nm, and the doping content of Mg is 1E20～1E21atom/cm
3.
The present invention has following beneficial effect:
1, promote brightness: growing method of the present invention is by revising HT MQW(high temperature multiple quantum well, high temperature multi layer quantum well stress release layer) energy band diagram, realization, to entering the barrier effect of luminous zone electronics, reduces electronics and enters p layer and the non-radiative compound probability of hole generation; And, in the electronics process two-dimensional diffusion that HT MQW is blocked, inject more uniformly luminous zone, improve the combined efficiency in electronics and hole, promote brightness;
2, direction of improvement voltage: the AlInGaN material that quantum well stress release layer of the present invention adopts has changed being with of HT MQW, the electronics that enters active layer is played to certain barrier effect, the too much electronics of effective inhibition enters the p layer and the hole generation is non-radiative compound, effectively direction of improvement voltage VRD;
3, the even injection of electronics, the reparation that can be with have reduced the operating voltage VF of device to a certain extent.
In general, this structure has significantly promoted large-sized chip brightness and direction voltage VRD, significantly promotes and has reduced operating voltage simultaneously.The experiment conclusion provided from embodiment shows: under the 28*28 size, after HT MQW is used the AlInGaN material to replace the InGaN material, brightness rises to 200～210mw from 185～200mw, and VRD rises to 30～40V from 20～25V, and voltage is reduced to 3.25～3.35V from 3.4～3.5V.
Except purpose described above, feature and advantage, the present invention also has other purpose, feature and advantage.Below with reference to figure, the present invention is further detailed explanation.
The accompanying drawing explanation
The accompanying drawing that forms the application's a part is used to provide a further understanding of the present invention, and schematic description and description of the present invention the present invention does not form inappropriate limitation of the present invention for explaining.In the accompanying drawings:
Fig. 1 is comparative example's of the present invention structural representation;
Fig. 2 is comparative example's of the present invention HT MQW energy band diagram;
Fig. 3 is the structural representation of the embodiment of the present invention;
Fig. 4 is the HT MQW energy band diagram of the embodiment of the present invention;
Fig. 5 is the brightness contrast figure of sample 1 and sample 2;
Fig. 6 is the VRD comparison diagram of sample 1 and sample 2;
Fig. 7 is the VF comparison diagram of sample 1 and sample 2;
Wherein, 1, Sapphire Substrate, 2, the GaN nucleating layer, 3, non-doping uGaN resilient coating, 4, the nGaN layer, 5, mix indium HT-MQW layer, 6, mix indium trap layer, 7, P type AlGaN layer, 8, P type GaN layer, 9, the InGaN layer, 10, mix the HT mqw layer of In and Al.
Embodiment
Below in conjunction with accompanying drawing, embodiments of the invention are elaborated, but the present invention can implement according to the multitude of different ways that claim limits and covers.
The invention provides a kind of growing method of epitaxial structure quantum well stress release layer, comprise successively and process substrate, low temperature growth buffer GaN layer, growth undope GaN layer, growth that GaN layer, growth mix Si have chance with a layer MQW, growing P-type AlGaN layer, growth P-type GaN layer, growing InGaN layer step, in growth, mix SiGaN layer step and growth is had chance with between layer MQW step, comprise grown quantum trap stress release layer steps A:
In temperature, be 750-800 ℃, in the reative cell of 300mbar, pass into trimethyl indium, trimethyl gallium, triethyl-gallium and trimethyl aluminium, generate the GaN layer of 40nm thickness and the Al of 2nm thickness
yIn
xGa
(1-x-y)The N layer, x=0.05-0.08 wherein, y=0.02-0.05, gross thickness is 160nm.
The quantum well stress release layer of the present invention's growth has adopted the AlInGaN material, stops the electronics that enters active layer, reduces electronics and enters p layer and the non-radiative compound probability of hole generation, makes large size chip brightness and direction voltage get a promotion.
Below explanation is adopted and to have conventional method now, to be prepared the comparative example one of sample 1 respectively, and adopts growing method of the present invention to prepare the embodiment mono-of sample 2, then two kinds of methods is obtained to sample 1 and sample 2 carries out Performance Detection relatively.
Comparative example one,
1,, at 800-1000 ℃, in the reative cell of 300mbar, pass into the hydrogen of 33000sccm, high-temperature process Sapphire Substrate 5-6 minute;
2, being cooled under 500-550 ℃, is the low temperature buffer layer GaN layer (Nucleation) of 30-40nm at Grown on Sapphire Substrates thickness;
3, increase the temperature under 1000-1100 ℃, lasting growth thickness is the GaN layer (uGaN) that undopes of 1-2.5um;
4, continuing growth thickness is the GaN layer (nGaN) that the N-shaped of 2-4um is mixed Si again;
5, temperature drops to 800 ℃, pass into the trimethyl indium of 800sccm, the trimethyl gallium of 100sccm, the triethyl-gallium of 120sccm, lasting growth thickness is the HT MQW(high temperature multiple quantum well that mixes In of 160nm, the high temperature multi layer quantum well), thickness is 40nm GaN/2nm InxGa
(1-x)The N layer, x=0.05-0.08,4 cycle alternating growths;
6, the growth layer MQW that have chance with periodically, the thickness of 750 ℃ of grow doping In of low temperature is the In of 3nm
xGa
(1-x)N(x=0.20-0.21) layer, the GaN layer that 840 ℃ of growth thickness of high temperature are 12nm, In
xGa
(1-x)The N/GaN periodicity is 15;
7, increase the temperature to again the P type AlGaN layer that 930-950 ℃ of lasting growth thickness is 20-30nm;
8, increase the temperature to again the P type GaN layer (PGaN) of mixing magnesium that 950-980 ℃ of lasting growth thickness is 0.15-0.20um;
While 9, reducing the temperature to 650-680 ℃, growth thickness is that the low temperature of 5-10nm is mixed magnesium InGaN layer again;
10, reduce the temperature to again 700-750 ℃, under nitrogen atmosphere, duration 20-30 minute, activation PGaN, obtain sample 1.
The structure of sample 1 can be shown in Figure 1, and its energy band diagram as shown in Figure 2.Wherein, top curve is conduction band, and it is poor that the conduction band of A point expression HT MQW can be with; Lower curve is valence band, and it is poor that the valence band of B point expression HT MQW can be with; The lateral arrows indication is N layer injected electrons.The curve of back segment big rise and fall means MQW, and the less curve of leading portion fluctuating means HT MQW.
Embodiment mono-,
The present invention uses the Aixtron Cruis I MOCVD brightness GaN base LED epitaxial wafer that grows tall next life.Adopt high-purity H
2Or high-purity N
2Or high-purity H
2And high-purity N
2Mist as carrier gas, high-purity N H
3As the N source, metal organic source trimethyl gallium (TMGa), triethyl-gallium are as gallium (TEGa) source, and trimethyl indium (TMIn) is as the indium source, and the N-type dopant is silane (SiH
4), P type dopant is two luxuriant magnesium (CP
2Mg), substrate is (0001) surface sapphire, reaction pressure at 100mbar between 800mbar.Concrete growth pattern is as follows:
1,, at 800-1000 ℃, in the reative cell of 300mbar, pass into 33000sccm hydrogen, high-temperature process Sapphire Substrate 5-6 minute;
2, being cooled under 500-550 ℃, is the low temperature buffer layer GaN (Nucleation) of 30-40nm at Grown on Sapphire Substrates thickness;
3, increase the temperature under 1000-1100 ℃, lasting growth thickness is the GaN that undopes (uGaN) of 1-2.5um;
4, continuing growth thickness is the GaN (nGaN) that the N-shaped of 2-4um is mixed Si again;
5, temperature drops to 750-800 ℃, passes into the trimethyl indium of 800sccm, and the trimethyl gallium of 100sccm, the triethyl-gallium of 120sccm and the trimethyl aluminium of 10sccm, lasting growth thickness are the HT MQW that mixes In and Al of 160nm, adopts 40nmGaN/2nm Al
yIn
xGa
(1-x-y)4 cycle alternating growths of N (x=0.05-0.08, y=0.02-0.05);
6, the growth layer MQW that have chance with periodically, the thickness of 750 ℃ of grow doping In of low temperature is the In of 3nm
xGa
(1-x)N(x～=0.20-0.21) layer, the GaN layer that 840 ℃ of growth thickness of high temperature are 12nm, In
xGa
(1-x)The N/GaN periodicity is 15
7, increase the temperature to again the P type AlGaN layer that 930-950 ℃ of lasting growth thickness is 20-30nm;
8, increase the temperature to again the P type GaN layer of mixing magnesium that 950-980 ℃ of lasting growth thickness is 0.15-0.20um;
While 9, reducing the temperature to 650-680 ℃, growth thickness is that the low temperature of 5-10nm is mixed magnesium InGaN layer again;
10, reduce the temperature to again 700-750 ℃, under nitrogen atmosphere, duration 20-30 minute, activation PGaN, obtain sample 2.
The structure of sample 2 can be shown in Figure 3, and its energy band diagram as shown in Figure 4.Wherein, top curve is conduction band, and it is poor that the conduction band of C point expression HT MQW can be with; Lower curve is valence band, and it is poor that the valence band of D point expression HT MQW can be with; The lateral arrows indication is N layer injected electrons.The curve of back segment big rise and fall means MQW, and the less curve of leading portion fluctuating means HT MQW
The Performance Ratio of sample 1 and sample 2 can see table 1:
The chip data mean value contrast of table 1 liang sample HT MQW
| ID | LOP1 | VF1 | WD1 | VRD | HW | IR1 | | ESD2K |
| Sample | ||||||||
| 2 | 203.01 | 3.32 | 450.93 | 33.65 | 20.24 | 0.0101 | 1.89 | 84.84 |
| Sample | ||||||||
| 1 | 193.29 | 3.44 | 451.07 | 22.59 | 19.24 | 0.0124 | 1.81 | 85.97% |
By in table 1, seeing, the brightness of sample 2 (LOP1), reverse voltage (VRD), dominant wavelength half-wave wide (HW) and blue shift (BS) are all higher than sample 1, and the main performance advantage is outstanding; And voltage (VF1), dominant wavelength (WD1), electrical leakage (IR1), 2kv antistatic effect (ESD2K) is lower than sample 1, its security performance is higher.
And, from Fig. 5, Fig. 6 and Fig. 7, finding out respectively brightness, VRD, the VF difference of sample 2 and sample 1, wherein, thick line representative sample 2 data, fine rule representative sample 1 data.In Fig. 5, along with granule number increases, sample 2 data and curves rise at 197-210mw, and sample 1 data and curves is between 185-200mw, and sample 2 brightness far win sample 1.In Fig. 6, along with granule number increases, sample 2 data and curves rise at 30-40v, and sample 1 data and curves is between 20-25v, and the VRD of sample 2 far wins sample 1.In Fig. 7, along with granule number increases, sample 2 data and curves are at 3.25～3.35V, and sample 1 data and curves is at 3.4～3.5V, and the voltage of sample 2 is compared sample 1, reduces many.
Referring to Fig. 3, the present invention also provides a kind of epitaxial structure, comprises that gross thickness is the quantum well stress release layer of 160nm, and described quantum well stress release layer is the HT mqw layer 10 of mixing In and Al, comprises the GaN layer of 40nm thickness and the Al of 2nm thickness
yIn
xGa
(1-x-y)The N layer, x=0.05-0.08 wherein, y=0.02-0.05.The HT mqw layer 10 of mixing In and Al has replaced the indium HT-MQW layer 5 of mixing of the prior art.
Preferably, under described quantum well stress release layer 10, can comprise successively from top to bottom:
Non-doping uGaN resilient coating 3, thickness is 1-2.5um;
Preferably, on described quantum well stress release layer, can comprise successively from top to bottom:
Mix indium trap layer 6, comprise In Ga
(1-x)N layer and GaN layer, wherein, In
xGa
(1-x)The thickness of N layer is 3nm, doping In; The thickness of GaN layer is 12nm; Described In
xGa
(1-x)The periodicity of N layer and described GaN ply is 15;
P type AlGaN layer 7, thickness is 20-30nm;
P type GaN layer 8, thickness is 0.15-0.20um, mixes Mg, the doping content of Mg is 1E19～1E20atom/cm
3
The foregoing is only the preferred embodiments of the present invention, be not limited to the present invention, for a person skilled in the art, the present invention can have various modifications and variations.Within the spirit and principles in the present invention all, any modification of doing, be equal to replacement, improvement etc., within all should being included in protection scope of the present invention.
Claims (6)
1. the growing method of an epitaxial structure quantum well stress release layer, comprise successively and process substrate, low temperature growth buffer GaN layer, growth undope GaN layer, growth that GaN layer, growth mix Si have chance with a layer MQW, growing P-type AlGaN layer, growth P-type GaN layer, growing InGaN layer step, it is characterized in that
In growth, mix GaN layer step and the growth of Si and have chance with between layer MQW step, comprise grown quantum trap stress release layer steps A:
Between the n of Grown on Sapphire Substrates layer GaN and luminescent layer MQW, insert high temperature quantum well layer (HTMQW) as stress release layer, the high temperature quantum well is GaN and the Al in 2～5 cycles
yIn
xGa
(1-x-y)N heterostructure layer, wherein the thickness of GaN is at 20～60nm, Al
yIn
xGa
(1-x-y)The thickness of N is at 1～5nm, x=0.05-0.08, y=0.02-0.05.
2. the growing method of a kind of epitaxial structure quantum well stress release layer according to claim 1, is characterized in that, before described steps A, comprises step:
S1, process substrate: 1000-1100 ℃ hydrogen atmosphere under, process Sapphire Substrate 5-6 minute;
S2, low temperature growth buffer GaN layer: being cooled to 500-550 ℃, is the low temperature buffer GaN layer of 30-40nm at Grown on Sapphire Substrates thickness;
S3, the GaN layer that undopes of growing: be warming up to 1000-1100 ℃, lasting growth thickness is the GaN layer that undopes of 1-2.5um;
The GaN layer of Si is mixed in S4, growth: lasting growth thickness is the GaN layer that the N-type of 2-4um is mixed 16～32sccmSi, and the doping content of Si is 5E18-2E19atom/cm
3.
3. the growing method of a kind of epitaxial structure quantum well stress release layer according to claim 1, is characterized in that, after described steps A, comprises step:
D1, the growth layer MQW that have chance with periodically: the thickness of 750 ℃ of grow doping 250～500sccmIn of low temperature is the In of 3nm
xGa
(1-x)The N layer, x=0.20-0.21 wherein, the GaN layer that 840 ℃ of growth thickness of high temperature are 12nm, In
xGa
(1-x)The periodicity of N/GaN layer is 15; The doping content of In is 1E19-1E20atom/cm
3.
D2, growing P-type AlGaN layer: increase the temperature to the P type AlGaN layer that 930-950 ℃ of lasting growth thickness is 20-30nm;
D3, growth P-type GaN layer: increasing the temperature to 950-980 ℃ of lasting growth thickness is the P type GaN layer of mixing 600～800sccmMg of 0.15-0.20um; The doping content of Mg is 1E19～1E20atom/cm
3
D4, growing InGaN layer: while reducing the temperature to 650-680 ℃, growth thickness is the InGaN layer of mixing 1200～1800sccmMg of 5-10nm; The doping content of Mg is 1E20～1E21atom/cm
3
D5, reduce the temperature to 700-750 ℃, activation P type GaN layer under nitrogen atmosphere, duration 20-30 minute.
4. an epitaxial structure, is characterized in that, comprises that gross thickness is the quantum well stress release layer of 160nm, and described quantum well stress release layer is the HTMQW layer of mixing In and Al, comprises the GaN layer of 40nm thickness and the Al of 2nm thickness
yIn
xGa
(1-x-y)The N layer, x=0.05-0.08 wherein, y=0.02-0.05.
5. a kind of epitaxial structure according to claim 4, is characterized in that, under described quantum well stress release layer, comprises successively from top to bottom:
GaN nucleating layer, thickness are 30-40nm;
Non-doping uGaN resilient coating, thickness is 1-2.5um;
NGaN layer, thickness are 2-4um, and the doping content of Si is 5E18-2E19atom/cm
3.
6. a kind of epitaxial structure according to claim 4, is characterized in that, on described quantum well stress release layer, comprises successively from top to bottom:
Mix indium trap layer, comprise InGa
(1-x)N layer and GaN layer, wherein, In
xGa
(1-x)The thickness of N layer is 3nm, doping In, and the doping content of In is 1E19-1E20atom/cm
3The thickness of GaN layer is 12nm; Described In
xGa
(1-x)The periodicity of N layer and described GaN ply is 15;
P type AlGaN layer, thickness is 20-30nm;
P type GaN layer, thickness is 0.15-0.20um, the doping content of Mg is 1E19～1E20atom/cm
3
InGaN layer, thickness are 5-10nm, and the doping content of Mg is 1E20～1E21atom/cm
3.
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