CN105870270A - Epitaxial superlattice growing method of LED - Google Patents
Epitaxial superlattice growing method of LED Download PDFInfo
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- CN105870270A CN105870270A CN201610379642.6A CN201610379642A CN105870270A CN 105870270 A CN105870270 A CN 105870270A CN 201610379642 A CN201610379642 A CN 201610379642A CN 105870270 A CN105870270 A CN 105870270A
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- 238000000034 method Methods 0.000 title claims abstract description 44
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 229910002704 AlGaN Inorganic materials 0.000 claims abstract description 12
- 238000001816 cooling Methods 0.000 claims abstract description 11
- 230000012010 growth Effects 0.000 claims description 97
- 238000006243 chemical reaction Methods 0.000 claims description 50
- 229910052594 sapphire Inorganic materials 0.000 claims description 11
- 239000010980 sapphire Substances 0.000 claims description 11
- 230000008569 process Effects 0.000 claims description 10
- 238000010438 heat treatment Methods 0.000 claims description 4
- 230000001788 irregular Effects 0.000 claims description 4
- 238000002156 mixing Methods 0.000 claims description 4
- 230000009467 reduction Effects 0.000 claims description 4
- 230000006641 stabilisation Effects 0.000 claims description 3
- 238000011105 stabilization Methods 0.000 claims description 3
- 229910052749 magnesium Inorganic materials 0.000 claims description 2
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 32
- 239000011777 magnesium Substances 0.000 description 25
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 16
- 239000007789 gas Substances 0.000 description 7
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 7
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical group [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 6
- 238000009826 distribution Methods 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 239000004575 stone Substances 0.000 description 3
- 230000005533 two-dimensional electron gas Effects 0.000 description 3
- MHYQBXJRURFKIN-UHFFFAOYSA-N C1(C=CC=C1)[Mg] Chemical compound C1(C=CC=C1)[Mg] MHYQBXJRURFKIN-UHFFFAOYSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 238000004590 computer program Methods 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 230000007773 growth pattern Effects 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 230000001795 light effect Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 230000035755 proliferation Effects 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
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- 230000032683 aging Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 235000008434 ginseng Nutrition 0.000 description 1
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- 238000003860 storage Methods 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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Abstract
The invention discloses an epitaxial superlattice growing method of an LED. The method sequentially comprises the steps of processing a substrate, growing a low-temperature buffer layer GaN, growing an undoped GaN layer, growing an N-type GaN layer doped with Si, growing a MgAlGaN/SiAlN superlattice layer, growing a luminous layer, growing a P-type AlGaN layer, growing a P-type GaN layer doped with Mg and conducting cooling. The MgAlGaN/SiAlN superlattice layer is introduced after growing of the N-type GaN layer doped with Si and before growing of the luminous layer, a current of the LED can be extended, the driving voltage of the LED can be reduced, the luminous efficiency performance of the LED can be improved, and the luminous intensity of the LED can be improved.
Description
Technical field
The application relates to LED epitaxial scheme applied technical field, specifically, relates to outside a kind of LED
Prolong superlattice growth method.
Background technology
LED (Light Emitting Diode, light emitting diode) is a kind of solid state lighting at present, volume
Little, power consumption long high brightness in low service life, environmental protection, the advantage such as sturdy and durable are recognized by consumers in general
Can, the scale of domestic production LED is also progressively expanding；To LED luminance and the demand of light efficiency on market
Grow with each passing day, how to grow more preferable epitaxial wafer and be increasingly subject to pay attention to, because the carrying of epitaxial layer crystal mass
Height, the performance of LED component can get a promotion, the luminous efficiency of LED, the life-span, ageing resistance,
Antistatic effect, stability can promote along with the lifting of epitaxial layer crystal mass.
But, traditional sapphire LED epitaxially grown N shell CURRENT DISTRIBUTION is uneven, causes electric current
Crowded N shell resistance uprises, and causes the uneven luminous efficiency of luminescent layer CURRENT DISTRIBUTION the highest.
Summary of the invention
In view of this, technical problems to be solved in this application there is provided a kind of LED extensional superlattice
Growing method, introduces MgAlGaN/SiAlN superlattice layer, it is possible to extension LED current, reduces LED
Driving voltage, promotes LED light effect performance, improves LED luminous intensity.
In order to solve above-mentioned technical problem, the application has a following technical scheme:
A kind of LED extensional superlattice growing method, it is characterised in that include successively: process substrate,
Low temperature growth buffer layer GaN, growth undope GaN layer, growth doping the N-type GaN layer of Si, life
Long luminescent layer, growing P-type AlGaN layer, growth doping the p-type GaN layer of Mg, cooling down,
After the N-type GaN layer of described growth doping Si, before described growth luminescent layer, also include:
Growth MgAlGaN/SiAlN superlattice layer,
Described growth MgAlGaN/SiAlN superlattice layer is: keep reaction chamber pressure
750mbar-900mbar, holding temperature 1000 DEG C-1100 DEG C, being passed through flow is
The NH of 40000sccm-50000sccm3, the H of 110L/min-130L/min2、200sccm-250sccm
The Cp of TMGa, 800sccm-900sccm of TMAl, 200sccm-400sccm2Mg、
The SiH of 40sccm-55sccm4, grow MgAlGaN/SiAlN superlattice layer；
Described growth MgAlGaN/SiAlN superlattice layer, be further:
Keep reaction chamber pressure 750mbar-900mbar, keep temperature 1000 DEG C-1100 DEG C, be passed through flow
NH for 40000sccm-50000sccm3, the Cp of 800sccm-900sccm2Mg、
TMAl, 110L/min-130L/min of TMGa, 200sccm-250sccm of 200sccm-400sccm
H2, growth thickness is the MgAlGaN layer of 10nm-20nm；
Keep reaction chamber pressure 750mbar-900mbar, keep temperature 1000 DEG C-1100 DEG C, be passed through flow
NH for 40000sccm-50000sccm3, the H of 110L/min-130L/min2、200sccm-250sccm
The SiH of TMAl, 40sccm-55sccm4, grow SiAlN layer, wherein, Si doping content is
1E18atoms/cm3-5E18atoms/cm3；
MgAlGaN layer described in cyclical growth and described SiAlN layer, growth cycle is 10-18,
The order growing described MgAlGaN layer and the described SiAlN layer of growth is interchangeable.
Preferably, wherein:
Described process substrate, be further: at the H of 1000 DEG C-1100 DEG C2Under atmosphere, it is passed through
The H of 100L/min-130L/min2, keep reaction chamber pressure 100mbar-300mbar, process sapphire
Substrate 5min-10min.
Preferably, wherein:
Described low temperature growth buffer layer, be further:
Reduction temperature, to 500 DEG C-600 DEG C, keeps reaction chamber pressure 300mbar-600mbar, is passed through flow
For 10000sccm-20000sccm NH3, the TMGa of 50sccm-100sccm,
The H of 100L/min-130L/min2, on a sapphire substrate growth thickness be 20nm-40nm low temperature delay
Rush layer GaN；
Liter high-temperature, to 1000 DEG C-1100 DEG C, keeps reaction chamber pressure 300mbar-600mbar, is passed through stream
Amount is 30000sccm-40000sccm NH3, the H of 100L/min-130L/min2, keep temperature stabilization,
Continue 300s-500s, low temperature buffer layer GaN is corroded into irregular island.
Preferably, wherein:
Described growth undopes GaN layer, is further:
Increase the temperature to 1000 DEG C-1200 DEG C, keep reaction chamber pressure 300mbar-600mbar, be passed through stream
Amount is the NH of 30000sccm-40000sccm3, the TMGa of 200sccm-400sccm,
The H of 100L/min-130L/min2, the GaN layer that undopes of continued propagation 2 μm-4 μm.
Preferably, wherein:
The N-type GaN layer of described growth doping Si, be further:
Keep reaction chamber pressure, temperature-resistant, be passed through the NH that flow is 30000sccm-60000sccm3、
The H of TMGa, 100L/min-130L/min of 200sccm-400sccm2, the SiH of 20sccm-50sccm4,
N-type GaN of continued propagation 3 μm-4 μm doping Si, Si doping content
5E18atoms/cm3-1E19atoms/cm3。
Preferably, wherein:
Described growth luminescent layer, be further:
Keeping reaction chamber pressure 300mbar-400mbar, temperature 700 DEG C-750 DEG C, being passed through flow is
The NH of 50000sccm-70000sccm3, TMGa, 1500sccm-2000sccm of 20sccm-40sccm
The N of TMIn, 100L/min-130L/min2, the thickness of growth doping In is 2.5nm-3.5nm's
InxGa(1-x)N shell, x=0.20-0.25, emission wavelength 450nm-455nm；
Then liter high-temperature is to 750 DEG C-850 DEG C, keeps reaction chamber pressure 300mbar-400mbar, is passed through
Flow is the NH of 50000sccm-70000sccm3, the TMGa of 20sccm-100sccm,
The N of 100L/min-130L/min2, the GaN layer of growth 8nm-15nm；
Repeat InxGa(1-x)The growth of N, then repeats the growth of GaN, alternating growth InxGa(1-x)N/GaN
Luminescent layer, controlling periodicity is 7-15.
Preferably, wherein:
Described growing P-type AlGaN layer, be further:
Keeping reaction chamber pressure 200mbar-400mbar, temperature 900 DEG C-950 DEG C, being passed through flow is
The NH of 50000sccm-70000sccm3, TMGa, 100L/min-130L/min of 30sccm-60sccm
H2, the Cp of TMAl, 1000sccm-1300sccm of 100sccm-130sccm2Mg, persistently gives birth to
The p-type AlGaN layer of long 50nm-100nm, Al doping content 1E20atoms/cm3-3E20atoms/cm3,
Mg doping content 1E19atoms/cm3-1E20atoms/cm3。
Preferably, wherein:
The p-type GaN layer of described growth doping Mg, be further:
Keeping reaction chamber pressure 400mbar-900mbar, temperature 950 DEG C-1000 DEG C, being passed through flow is
The NH of 50000sccm-70000sccm3, TMGa, 100L/min-130L/min of 20sccm-100sccm
H2, the Cp of 1000sccm-3000sccm2The P mixing Mg of Mg, continued propagation 50nm-200nm
Type GaN layer, Mg doping content 1E19atoms/cm3-1E20atoms/cm3。
Preferably, wherein:
Described cooling down, be further:
It is cooled to 650 DEG C-680 DEG C, is incubated 20min-30min, be then switched off heating system, close to gas
System, furnace cooling.
Compared with prior art, method described herein, reach following effect:
LED extensional superlattice growing method of the present invention, compared with traditional method, in described growth doping
After the N-type GaN layer of Si, before growth luminescent layer, introduce growth MgAlGaN/SiAlN superlattices
Layer.New material MgAlGaN/SiAlN superlattice layer utilizes the high energy band of GaN to stop electricity as gesture is of heap of stone
Son too fast is traveled to luminescent layer by N shell, and the more crowded electronics of longitudinal propagation runs into the resistance that GaN can carry
Keep off suitable horizontal proliferation to come；MgAlGaN/SiAlN superlattice layer forms the two dimension of high concentration simultaneously
Electron gas, the lateral transfer rate of two-dimensional electron gas is the highest, accelerates the extending transversely of electronics, and macroscopic view powers on
Flow by being come, so that luminescent layer is electric by effective extension during MgAlGaN/SiAlN superlattice layer
The distribution of stream becomes uniform, and then improves the luminous intensity of LED, makes every electricity of LED simultaneously
Property parameter improves.
Accompanying drawing explanation
Accompanying drawing described herein is used for providing further understanding of the present application, constitutes of the application
Point, the schematic description and description of the application is used for explaining the application, is not intended that the application's
Improper restriction.In the accompanying drawings:
Fig. 1 is the flow chart of LED extensional superlattice growing method of the present invention；
Fig. 2 is the structural representation of LED epitaxial layer in the present invention；
Fig. 3 is the structural representation of LED epitaxial layer in comparative example；
, wherein, 1, substrate, 2, low temperature buffer layer GaN, 3, U-shaped GaN layer, 4 doping Si
GaN layer, 5, superlattice layer, 5.1, MgAlGaN layer, 5.2, SiAlN layer, 6, luminescent layer, 6.1,
InxGa(1-x)N shell, 6.2, GaN layer, 7, p-type AlGaN layer, 8, p-type GaN of doping Mg
Layer.
Detailed description of the invention
As employed some vocabulary in the middle of description and claim to censure specific components.This area skill
Art personnel are it is to be appreciated that hardware manufacturer may call same assembly with different nouns.This explanation
In the way of book and claim not difference by title is used as distinguishing assembly, but with assembly in function
On difference be used as distinguish criterion." bag as mentioned by the middle of description in the whole text and claim
Contain " it is an open language, therefore " comprise but be not limited to " should be construed to." substantially " refer to receivable
In range of error, those skilled in the art can solve described technical problem, base in the range of certain error
Originally described technique effect is reached.Additionally, " coupling " word comprises any directly and indirectly electrical coupling at this
Catcher section.Therefore, if a first device is coupled to one second device described in literary composition, then described first is represented
Device can directly be electrically coupled to described second device, or by other devices or to couple means the most electric
Property is coupled to described second device.Description subsequent descriptions is to implement the better embodiment of the application, so
For the purpose of described description is the rule so that the application to be described, it is not limited to scope of the present application.
The protection domain of the application is when being as the criterion depending on the defined person of claims.
Embodiment 1
Seeing Fig. 2, the present invention uses long high brightness GaN-based LED in MOCVD next life.Adopt
Use high-purity H2Or high-purity N2Or high-purity H2And high-purity N2Mixed gas as carrier gas, high-purity N H3Make
For N source, metal organic source trimethyl gallium (TMGa) is as gallium source, trimethyl indium (TMIn) conduct
Indium source, N type dopant is silane (SiH4), trimethyl aluminium (TMAl) is as aluminum source, P-type dopant
It is two cyclopentadienyl magnesium (CP2Mg), substrate is (001) surface sapphire, and reaction pressure is at 70mbar to 900mbar
Between.Concrete growth pattern is as follows:
A kind of LED extensional superlattice growing method, sees Fig. 1, it is characterised in that include successively: place
Manage substrate, low temperature growth buffer layer GaN, grow the GaN layer that undopes, the N-type of growth doping Si
GaN layer, growth luminescent layer, growing P-type AlGaN layer, growth doping Mg p-type GaN layer,
Cooling down,
After the N-type GaN layer of described growth doping Si, before growth luminescent layer, also include: raw
Long MgAlGaN/SiAlN superlattice layer,
Described growth MgAlGaN/SiAlN superlattice layer is: keep reaction chamber pressure
750mbar-900mbar, holding temperature 1000 DEG C-1100 DEG C, being passed through flow is
The NH of 40000sccm-50000sccm3, the H of 110L/min-130L/min2、200sccm-250sccm
The Cp of TMGa, 800sccm-900sccm of TMAl, 200sccm-400sccm2Mg、
The SiH of 40sccm-55sccm4, grow MgAlGaN/SiAlN superlattice layer；
Described growth MgAlGaN/SiAlN superlattice layer, be further:
Keep reaction chamber pressure 750mbar-900mbar, keep temperature 1000 DEG C-1100 DEG C, be passed through flow
NH for 40000sccm-50000sccm3, the Cp of 800sccm-900sccm2Mg、
TMAl, 110L/min-130L/min of TMGa, 200sccm-250sccm of 200sccm-400sccm
H2, growth thickness is the MgAlGaN layer of 10nm-20nm；
Keep reaction chamber pressure 750mbar-900mbar, keep temperature 1000 DEG C-1100 DEG C, be passed through flow
NH for 40000sccm-50000sccm3, the H of 110L/min-130L/min2、200sccm-250sccm
The SiH of TMAl, 40sccm-55sccm4, grow SiAlN layer, wherein, Si doping content is
1E18atoms/cm3-5E18atoms/cm3；
MgAlGaN layer described in cyclical growth and described SiAlN layer, growth cycle is 10-18,
The order growing described MgAlGaN layer and the described SiAlN layer of growth is interchangeable.
The present invention, after the N-type GaN layer of growth doping Si, before growth luminescent layer, introduces life
The step of long MgAlGaN/SiAlN superlattice layer, grows MgAlGaN/SiAlN superlattice layer.
MgAlGaN/SiAlN superlattice layer utilizes the high energy band of GaN to stop that electronics is too fast by N shell as gesture is of heap of stone
Traveling to luminescent layer, what the more crowded electronics of longitudinal propagation ran into that GaN can carry stops suitable horizontal expansion
Scatter；MgAlGaN/SiAlN superlattice layer forms the two-dimensional electron gas of high concentration, two dimension electricity simultaneously
The lateral transfer rate of edema of the legs during pregnancy is the highest, accelerates the extending transversely of electronics, and macroscopically electric current passes through MgAlGaN
Come, so that the distribution of luminescent layer electric current becomes equal by effective extension during/SiAlN superlattice layer
Even, and then be conducive to promoting the luminous intensity of LED.
Embodiment 2
The Application Example of the LED extensional superlattice growing method of the present invention presented below, its epitaxy junction
Structure sees Fig. 2, and growing method sees Fig. 1.Use long high brightness GaN-based LED in MOCVD next life
Epitaxial wafer.Use high-purity H2Or high-purity N2Or high-purity H2And high-purity N2Mixed gas as carrier gas,
High-purity N H3As N source, metal organic source trimethyl gallium (TMGa) is as gallium source, trimethyl indium (TMIn)
As indium source, N type dopant is silane (SiH4), trimethyl aluminium (TMAl) is mixed as aluminum source, p-type
Miscellaneous dose is two cyclopentadienyl magnesium (CP2Mg), substrate is (0001) surface sapphire, and reaction pressure is at 70mbar
Between 900mbar.Concrete growth pattern is as follows:
Step 101, process substrate:
At the H of 1000 DEG C-1100 DEG C2Under atmosphere, it is passed through the H of 100L/min-130L/min2, keep anti-
Answer cavity pressure 100mbar-300mbar, process Sapphire Substrate 5min-10min.
Step 102, low temperature growth buffer layer GaN:
Reduction temperature, to 500 DEG C-600 DEG C, keeps reaction chamber pressure 300mbar-600mbar, is passed through flow
For 10000sccm-20000sccm NH3(sccm is that standard milliliters is per minute), 50sccm-100sccm
The H of TMGa, 100L/min-130L/min2, growth thickness is 20nm-40nm on a sapphire substrate
Low temperature buffer layer GaN；
Liter high-temperature, to 1000 DEG C-1100 DEG C, keeps reaction chamber pressure 300mbar-600mbar, is passed through stream
Amount is 30000sccm-40000sccm NH3, the H of 100L/min-130L/min2, keep temperature stabilization,
Continue 300s-500s, low temperature buffer layer GaN is corroded into irregular island.
Step 103, growth undope GaN layer:
Increase the temperature to 1000 DEG C-1200 DEG C, keep reaction chamber pressure 300mbar-600mbar, be passed through stream
Amount is the NH of 30000sccm-40000sccm3, the TMGa of 200sccm-400sccm,
The H of 100L/min-130L/min2, the GaN layer that undopes of continued propagation 2 μm-4 μm.
Step 104, the N-type GaN layer of growth doping Si:
Keep reaction chamber pressure, temperature-resistant, be passed through the NH that flow is 30000sccm-60000sccm3、
The H of TMGa, 100L/min-130L/min of 200sccm-400sccm2, the SiH of 20sccm-50sccm4,
N-type GaN of continued propagation 3 μm-4 μm doping Si, Si doping content
5E18atoms/cm3-1E19atoms/cm3.(wherein, 1E19 represents 19 powers i.e. the 1*10 of 1019,
By that analogy, atoms/cm3For doping content unit, lower with)
Step 105, growth MgAlGaN/SiAlN superlattice layer:
Described growth MgAlGaN/SiAlN superlattice layer is: keep reaction chamber pressure
750mbar-900mbar, holding temperature 1000 DEG C-1100 DEG C, being passed through flow is
The NH of 40000sccm-50000sccm3, the H of 110L/min-130L/min2、200sccm-250sccm
The Cp of TMGa, 800sccm-900sccm of TMAl, 200sccm-400sccm2Mg、
The SiH of 40sccm-55sccm4, grow MgAlGaN/SiAlN superlattice layer；
Described growth MgAlGaN/SiAlN superlattice layer, be further:
Keep reaction chamber pressure 750mbar-900mbar, keep temperature 1000 DEG C-1100 DEG C, be passed through flow
NH for 40000sccm-50000sccm3, the Cp of 800sccm-900sccm2Mg、
TMAl, 110L/min-130L/min of TMGa, 200sccm-250sccm of 200sccm-400sccm
H2, growth thickness is the MgAlGaN layer of 10nm-20nm；
Keep reaction chamber pressure 750mbar-900mbar, keep temperature 1000 DEG C-1100 DEG C, be passed through flow
NH for 40000sccm-50000sccm3, the H of 110L/min-130L/min2、200sccm-250sccm
The SiH of TMAl, 40sccm-55sccm4, grow SiAlN layer, wherein, Si doping content is
1E18atoms/cm3-5E18atoms/cm3；
MgAlGaN layer described in cyclical growth and described SiAlN layer, growth cycle is 10-18,
The order growing described MgAlGaN layer and the described SiAlN layer of growth is interchangeable.
Step 106, growth luminescent layer:
Keeping reaction chamber pressure 300mbar-400mbar, temperature 700 DEG C-750 DEG C, being passed through flow is
The NH of 50000sccm-70000sccm3, TMGa, 1500sccm-2000sccm of 20sccm-40sccm
The N of TMIn, 100L/min-130L/min2, the thickness of growth doping In is 2.5nm-3.5nm's
InxGa(1-x)N shell, x=0.20-0.25, emission wavelength 450nm-455nm；
Then liter high-temperature is to 750 DEG C-850 DEG C, keeps reaction chamber pressure 300mbar-400mbar, is passed through
Flow is the NH of 50000sccm-70000sccm3, the TMGa of 20sccm-100sccm,
The N of 100L/min-130L/min2, the GaN layer of growth 8nm-15nm；
Repeat InxGa(1-x)The growth of N, then repeats the growth of GaN, alternating growth InxGa(1-x)N/GaN
Luminescent layer, controlling periodicity is 7-15.
Step 107, growing P-type AlGaN layer:
Keeping reaction chamber pressure 200mbar-400mbar, temperature 900 DEG C-950 DEG C, being passed through flow is
The NH of 50000sccm-70000sccm3, TMGa, 100L/min-130L/min of 30sccm-60sccm
H2, the Cp of TMAl, 1000sccm-1300sccm of 100sccm-130sccm2Mg, persistently gives birth to
The p-type AlGaN layer of long 50nm-100nm, Al doping content 1E20atoms/cm3-3E20atoms/cm3,
Mg doping content 1E19atoms/cm3-1E20atoms/cm3。
Step 108, the p-type GaN layer of growth doping Mg:
Keeping reaction chamber pressure 400mbar-900mbar, temperature 950 DEG C-1000 DEG C, being passed through flow is
The NH of 50000sccm-70000sccm3, TMGa, 100L/min-130L/min of 20sccm-100sccm
H2, the Cp of 1000sccm-3000sccm2The P mixing Mg of Mg, continued propagation 50nm-200nm
Type GaN layer, Mg doping content 1E19atoms/cm3-1E20atoms/cm3。
Step 109, cooling down:
It is cooled to 650 DEG C-680 DEG C, is incubated 20min-30min, be then switched off heating system, close to gas
System, furnace cooling.
Embodiment 3
A kind of conventional LED extensional superlattice growing method presented below is as the comparative example of the present invention.
The growing method of conventional LED extension is (epitaxial layer structure sees Fig. 3):
1, at the H of 1000 DEG C-1100 DEG C2Under atmosphere, it is passed through the H of 100L/min-130L/min2, protect
Hold reaction chamber pressure 100mbar-300mbar, process Sapphire Substrate 5min-10min.
2.1, reduction temperature is to 500 DEG C-600 DEG C, keeps reaction chamber pressure 300mbar-600mbar, logical
Inbound traffics are 10000sccm-20000sccm NH3(sccm is that standard milliliters is per minute),
The H of TMGa, 100L/min-130L/min of 50sccm-100sccm2, grow on a sapphire substrate
Thickness is the low temperature buffer layer GaN of 20nm-40nm；
2.2, liter high-temperature is to 1000 DEG C-1100 DEG C, keeps reaction chamber pressure 300mbar-600mbar,
Being passed through flow is 30000sccm-40000sccm NH3, the H of 100L/min-130L/min2, keep temperature
Stable, continue 300s-500s, low temperature buffer layer GaN is corroded into irregular island.
3, increase the temperature to 1000 DEG C-1200 DEG C, keep reaction chamber pressure 300mbar-600mbar, logical
Inbound traffics are the NH of 30000sccm-40000sccm3, the TMGa of 200sccm-400sccm,
The H of 100L/min-130L/min2, the GaN layer that undopes of continued propagation 2 μm-4 μm.
4, keeping reaction chamber pressure, temperature-resistant, being passed through flow is 30000sccm-60000sccm's
NH3, the H of TMGa, 100L/min-130L/min of 200sccm-400sccm2、20sccm-50sccm
SiH4, N-type GaN of continued propagation 3 μm-4 μm doping Si, Si doping content
5E18atoms/cm3-1E19atoms/cm3。
5, keeping reaction chamber pressure, temperature-resistant, being passed through flow is 30000sccm-60000sccm's
NH3, the H of TMGa, 100L/min-130L/min of 200sccm-400sccm2、2sccm-10sccm
SiH4, N-type GaN of continued propagation 200nm-400nm doping Si, Si doping content
5E17atoms/cm3-1E18atoms/cm3。
6, keeping reaction chamber pressure 300mbar-400mbar, temperature 700 DEG C-750 DEG C, being passed through flow is
The NH of 50000sccm-70000sccm3, TMGa, 1500sccm-2000sccm of 20sccm-40sccm
The N of TMIn, 100L/min-130L/min2, the thickness of growth doping In is 2.5nm-3.5nm's
InxGa(1-x)N shell, x=0.20-0.25, emission wavelength 450nm-455nm；Then high-temperature is risen extremely
750 DEG C-850 DEG C, keeping reaction chamber pressure 300mbar-400mbar, being passed through flow is
The NH of 50000sccm-70000sccm3, TMGa, 100L/min-130L/min of 20sccm-100sccm
N2, the GaN layer of growth 8nm-15nm；Repeat InxGa(1-x)The growth of N, then repeats GaN
Growth, alternating growth InxGa(1-x)N/GaN luminescent layer, controlling periodicity is 7-15.
7, keeping reaction chamber pressure 200mbar-400mbar, temperature 900 DEG C-950 DEG C, being passed through flow is
The NH of 50000sccm-70000sccm3, TMGa, 100L/min-130L/min of 30sccm-60sccm
H2, the Cp of TMAl, 1000sccm-1300sccm of 100sccm-130sccm2Mg, persistently gives birth to
The p-type AlGaN layer of long 50nm-100nm, Al doping content 1E20atoms/cm3-3E20atoms/cm3,
Mg doping content 1E19atoms/cm3-1E20atoms/cm3。
8, keeping reaction chamber pressure 400mbar-900mbar, temperature 950 DEG C-1000 DEG C, being passed through flow is
The NH of 50000sccm-70000sccm3, TMGa, 100L/min-130L/min of 20sccm-100sccm
H2, the Cp of 1000sccm-3000sccm2The P mixing Mg of Mg, continued propagation 50nm-200nm
Type GaN layer, Mg doping content 1E19atoms/cm3-1E20atoms/cm3。
9, it is cooled to 650 DEG C-680 DEG C, is incubated 20min-30min, is then switched off heating system, closedown
To gas system, furnace cooling.
On same board, according to growing method (method of the comparative example) system of conventional LED
Standby sample 1, prepares sample 2 according to the method that this patent describes；Sample 1 and sample 2 epitaxial growth side
Method parameter difference is that the present invention introduces growth after the N-type GaN layer of growth doping Si
Step 105 in the step of MgAlGaN/SiAlN superlattice layer, i.e. embodiment 2, step 105 is with right
More entirely different than the 5th step in embodiment, grow that the growth conditions of other epitaxial layer is just the same (to be seen
Table 1).
Sample 1 plates ITO layer about 150nm, identical condition with sample 2 under identical front process conditions
Lower plating Cr/Pt/Au electrode about 1500nm, identical under conditions of plating SiO2About 100nm, then
At identical conditions sample grinding and cutting is become the chip granule of 635 μm * 635 μm (25mil*25mil),
Then sample 1 and sample 2 each select 100 crystal grain in same position, under identical packaging technology,
It is packaged into white light LEDs.Then integrating sphere test sample 1 He under the conditions of driving electric current 350mA is used
The photoelectric properties of sample 2.
Table 1 is sample 1 and sample 2 growth parameter(s) contrast table, and table 2 is the electrical of sample 1 and sample 2
Parameter comparison table.
The contrast of table 1 growth parameter(s)
Table 2 sample 1 and the comparison of sample 2 product electrical parameter
Be can be seen that by the Data Comparison of table 2, sample 2 is compared with sample 1, and light efficiency is from 133.8Lm/w
Having brought up to 145.2Lm/w, voltage is reduced to 3.12V from 3.2V, and backward voltage rises to from 36V
37.02V, emission wavelength reduces, and electric leakage reduces, and 2KV yield brings up to 93.50% from 92.20%, because of
This can be concluded that
The growing method provided by this patent, LED light effect numbering, brightness significantly improves, and other are every
LED electrical parameter also improves.Experimental data demonstrates the scheme of this patent can be obviously improved LED product
The feasibility of light efficiency.
By various embodiments above, the application exists and provides the benefit that:
LED extensional superlattice growing method of the present invention, compared with traditional method, in described growth doping
After the N-type GaN layer of Si, before growth luminescent layer, grow MgAlGaN/SiAlN superlattice layer.Newly
Material MgAlGaN/SiAlN superlattice layer, utilize the high energy band of GaN to stop electronics mistake as gesture is of heap of stone
Being traveled to luminescent layer by N shell soon, the more crowded electronics of longitudinal propagation runs into the stop that GaN can carry and fits
When horizontal proliferation come；MgAlGaN/SiAlN superlattice layer forms the Two-dimensional electron of high concentration simultaneously
Gas, the lateral transfer rate of two-dimensional electron gas is the highest, accelerates the extending transversely of electronics, and macroscopically electric current leads to
Come by effective extension when crossing MgAlGaN/SiAlN superlattice layer, so that luminescent layer electric current
Distribution becomes uniform, and then improves the luminous intensity of LED, makes the every electrical ginseng of LED simultaneously
Number improves.
Those skilled in the art it should be appreciated that embodiments herein can be provided as method, device or
Computer program.Therefore, the application can use complete hardware embodiment, complete software implementation,
Or combine the form of embodiment in terms of software and hardware.And, the application can use one or more
The computer-usable storage medium wherein including computer usable program code (includes but not limited to disk
Memorizer, CD-ROM, optical memory etc.) form of the upper computer program implemented.
Described above illustrate and describes some preferred embodiments of the application, but as previously mentioned, it should reason
Solve the application and be not limited to form disclosed herein, be not to be taken as the eliminating to other embodiments,
And can be used for various other combination, amendment and environment, and can in invention contemplated scope described herein,
It is modified by above-mentioned teaching or the technology of association area or knowledge.And those skilled in the art are carried out changes
Move and change is without departing from spirit and scope, the most all should be in the protection of the application claims
In the range of.
Claims (9)
1. a LED extensional superlattice growing method, it is characterised in that include successively: process substrate,
Low temperature growth buffer layer GaN, growth undope GaN layer, growth doping the N-type GaN layer of Si, life
Long luminescent layer, growing P-type AlGaN layer, growth doping the p-type GaN layer of Mg, cooling down,
After the N-type GaN layer of described growth doping Si, before described growth luminescent layer, also include:
Growth MgAlGaN/SiAlN superlattice layer,
Described growth MgAlGaN/SiAlN superlattice layer is: keep reaction chamber pressure
750mbar-900mbar, holding temperature 1000 DEG C-1100 DEG C, being passed through flow is
The NH of 40000sccm-50000sccm3, the H of 110L/min-130L/min2、200sccm-250sccm
The Cp of TMGa, 800sccm-900sccm of TMAl, 200sccm-400sccm2Mg、
The SiH of 40sccm-55sccm4, grow MgAlGaN/SiAlN superlattice layer；
Described growth MgAlGaN/SiAlN superlattice layer, be further:
Keep reaction chamber pressure 750mbar-900mbar, keep temperature 1000 DEG C-1100 DEG C, be passed through flow
NH for 40000sccm-50000sccm3, the Cp of 800sccm-900sccm2Mg、
TMAl, 110L/min-130L/min of TMGa, 200sccm-250sccm of 200sccm-400sccm
H2, growth thickness is the MgAlGaN layer of 10nm-20nm；
Keep reaction chamber pressure 750mbar-900mbar, keep temperature 1000 DEG C-1100 DEG C, be passed through flow
NH for 40000sccm-50000sccm3, the H of 110L/min-130L/min2、200sccm-250sccm
The SiH of TMAl, 40sccm-55sccm4, grow SiAlN layer, wherein, Si doping content is
1E18atoms/cm3-5E18atoms/cm3；
MgAlGaN layer described in cyclical growth and described SiAlN layer, growth cycle is 10-18,
The order growing described MgAlGaN layer and the described SiAlN layer of growth is interchangeable.
LED extensional superlattice growing method the most according to claim 1, it is characterised in that
Described process substrate, be further: at the H of 1000 DEG C-1100 DEG C2Under atmosphere, it is passed through
The H of 100L/min-130L/min2, keep reaction chamber pressure 100mbar-300mbar, process sapphire
Substrate 5min-10min.
LED extensional superlattice growing method the most according to claim 1, it is characterised in that
Described low temperature growth buffer layer, be further:
Reduction temperature, to 500 DEG C-600 DEG C, keeps reaction chamber pressure 300mbar-600mbar, is passed through flow
For 10000sccm-20000sccm NH3, the TMGa of 50sccm-100sccm,
The H of 100L/min-130L/min2, on a sapphire substrate growth thickness be 20nm-40nm low temperature delay
Rush layer GaN；
Liter high-temperature, to 1000 DEG C-1100 DEG C, keeps reaction chamber pressure 300mbar-600mbar, is passed through stream
Amount is 30000sccm-40000sccm NH3, the H of 100L/min-130L/min2, keep temperature stabilization,
Continue 300s-500s, low temperature buffer layer GaN is corroded into irregular island.
LED extensional superlattice growing method the most according to claim 1, it is characterised in that
Described growth undopes GaN layer, is further:
Increase the temperature to 1000 DEG C-1200 DEG C, keep reaction chamber pressure 300mbar-600mbar, be passed through stream
Amount is the NH of 30000sccm-40000sccm3, the TMGa of 200sccm-400sccm,
The H of 100L/min-130L/min2, the GaN layer that undopes of continued propagation 2 μm-4 μm.
LED extensional superlattice growing method the most according to claim 1, it is characterised in that
The N-type GaN layer of described growth doping Si, be further:
Keep reaction chamber pressure, temperature-resistant, be passed through the NH that flow is 30000sccm-60000sccm3、
The H of TMGa, 100L/min-130L/min of 200sccm-400sccm2, the SiH of 20sccm-50sccm4,
N-type GaN of continued propagation 3 μm-4 μm doping Si, Si doping content
5E18atoms/cm3-1E19atoms/cm3。
LED extensional superlattice growing method the most according to claim 1, it is characterised in that
Described growth luminescent layer, be further:
Keeping reaction chamber pressure 300mbar-400mbar, temperature 700 DEG C-750 DEG C, being passed through flow is
The NH of 50000sccm-70000sccm3, TMGa, 1500sccm-2000sccm of 20sccm-40sccm
The N of TMIn, 100L/min-130L/min2, the thickness of growth doping In is 2.5nm-3.5nm's
InxGa(1-x)N shell, x=0.20-0.25, emission wavelength 450nm-455nm；
Then liter high-temperature is to 750 DEG C-850 DEG C, keeps reaction chamber pressure 300mbar-400mbar, is passed through
Flow is the NH of 50000sccm-70000sccm3, the TMGa of 20sccm-100sccm,
The N of 100L/min-130L/min2, the GaN layer of growth 8nm-15nm；
Repeat InxGa(1-x)The growth of N, then repeats the growth of GaN, alternating growth InxGa(1-x)N/GaN
Luminescent layer, controlling periodicity is 7-15.
LED extensional superlattice growing method the most according to claim 1, it is characterised in that
Described growing P-type AlGaN layer, be further:
Keeping reaction chamber pressure 200mbar-400mbar, temperature 900 DEG C-950 DEG C, being passed through flow is
The NH of 50000sccm-70000sccm3, TMGa, 100L/min-130L/min of 30sccm-60sccm
H2, the Cp of TMAl, 1000sccm-1300sccm of 100sccm-130sccm2Mg, persistently gives birth to
The p-type AlGaN layer of long 50nm-100nm, Al doping content 1E20atoms/cm3-3E20atoms/cm3,
Mg doping content 1E19atoms/cm3-1E20atoms/cm3。
LED extensional superlattice growing method the most according to claim 1, it is characterised in that
The p-type GaN layer of described growth doping Mg, be further:
Keeping reaction chamber pressure 400mbar-900mbar, temperature 950 DEG C-1000 DEG C, being passed through flow is
The NH of 50000sccm-70000sccm3, TMGa, 100L/min-130L/min of 20sccm-100sccm
H2, the Cp of 1000sccm-3000sccm2The P mixing Mg of Mg, continued propagation 50nm-200nm
Type GaN layer, Mg doping content 1E19atoms/cm3-1E20atoms/cm3。
LED extensional superlattice growing method the most according to claim 1, it is characterised in that
Described cooling down, be further:
It is cooled to 650 DEG C-680 DEG C, is incubated 20min-30min, be then switched off heating system, close to gas
System, furnace cooling.
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